Готові списки джерел за темами / Opto-electronic Devices

Добірка наукової літератури з теми "Opto-electronic Devices"

Автор: Grafiati
Опубліковано: 7 вересня 2023

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Статті в журналах з теми "Opto-electronic Devices"

1

Boyanov, Petar. "PRIMARY PROCESSING OF SIGNALS IN AN OPTO-ELECTRONIC DEVICES." Journal Scientific and Applied Research 8, no. 1 (November 14, 2015): 10–15. http://dx.doi.org/10.46687/jsar.v8i1.172.

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The energy efficiency of systems for primary processing of signals in opto-electronic devices is analyzed for the case of identification and study of remote objects against a bright background and under low-contrast conditions. A criterion is determined for evaluating the energy efficiency of the major unit of the system for primary signal processing - the optic system, and some expressions are derived, relating the value of the signal-to-noise ratio at the device's input with these criteria (amplification factor) and other "ideal" or "real" optic systems' parameters. The specific thing here is the operation of the system for primary processing of signals when the value of recorded contrast equals 1 percent or less. As an evaluation criterion for the energy efficiency of this system, the signal-to-noise ratio is used. Comparative evaluation of various systems for primary processing of signals operating under low-contrast conditions and specific values of the signal-to-noise ratio is performed. The operation analysis for the system for primary processing of information (signals) under low-contrast conditions is performed accounting for the impact of the optic system. The evaluation criterion for the energy efficiency of the major unit of the system for primary processing of information (the optic system) is the amplification factor, which determines the limit value for the signal-to-noise ratio at the output of the optic-electronic device. The assumption is made that the flow, which determines the circle's area, is uniformly distributed, which does not cause significant errors in evaluating the energy efficiency of the optic-electronic system.
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2

Bhattacharya, P., S. Ghosh, and A. D. Stiff-Roberts. "QUANTUM DOT OPTO-ELECTRONIC DEVICES." Annual Review of Materials Research 34, no. 1 (August 4, 2004): 1–40. http://dx.doi.org/10.1146/annurev.matsci.34.040203.111535.

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3

Stavila, V., A. A. Talin, and M. D. Allendorf. "MOF-based electronic and opto-electronic devices." Chem. Soc. Rev. 43, no. 16 (2014): 5994–6010. http://dx.doi.org/10.1039/c4cs00096j.

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4

Krawczyk, S. K. "Senso-opto-micro-electronic (somet) devices." Sensors and Actuators 11, no. 3 (April 1987): 289–97. http://dx.doi.org/10.1016/0250-6874(87)80008-2.

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5

Ahuja, Swati, Mark Scarbecz, Heath Balch, and David R Cagna. "Verification of the Accuracy of Electronic Mandibular Movement-recording Devices: An in vitro Investigation." International Journal of Experimental Dental Science 6, no. 2 (2017): 84–94. http://dx.doi.org/10.5005/jp-journals-10029-1162.

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ABSTRACT Aims and objectives To determine the accuracy of an opto-electronic pantograph (Freecorder Bluefox, Dentron) in locating a known transverse horizontal axis (THA); To determine the accuracy of the opto-electronic pantograph and the mechano-electronic pantograph (Cadiax Compact 2, Whip Mix Corp) in recording preset condylar control values; and additionally, compare the accuracy of the opto-electronic and mechano-electronic pantographs with each other. Materials and methods A fully adjustable articulator (Denar D5A, Whip Mix Corp) was employed as a mock patient. True condylar control settings and condylar control values determined by each recording device were documented and statistically analyzed using 2-sample independent t-tests (p < 0.05). Results Statistical data analysis indicated that (1) the opto-electronic pantograph did not accurately locate the known THA; (2) the condylar control values registered by opto-electronic and the mechano-electronic pantographs were statistically different from the preset condylar control values; and (3) different degrees of accuracy existed between the opto-electronic pantograph and mechano-electronic pantograph. Conclusion Errors up to 5 mm in the location of the THA may not have much clinical significance. The majority of articulator condylar control settings predicted by the opto-electronic and mechano-electronic pantographs investigated in this study were statistically different. Clinically, the predicted mean values for the lateral condylar inclination (LCI) and progressive mandibular lateral translation (PMLT) were within 5° of the known mock patient settings. However, the medial wall angulation and immediate side shift values obtained from the opto-electronic instrument suffered from large errors. Clinical implication Practical goals for complex restorative dentistry often include attaining accurate occlusal relationships, simulating the patient's mandibular movements in the laboratory using three-dimensional instrumentation and achieving desired occlusal contacts and relationships. Clinicians may rely on mandibular motion-recording devices to render accurate and useful information. Cost of purchase of electronic mandibular motion-recording devices (opto-electronic and mechano-electronic recorders), their accuracy, and time required for training should be compared with the use of conventional pantographs. The use of electronic pantograph may lead to savings in time and efforts over conventional pantograph and interocclusal records. How to cite this article Balch H, Cagna DR, Ahuja S, Scarbecz M. Verification of the Accuracy of Electronic Mandibular Movement-recording Devices: An in vitro Investigation. Int J Experiment Dent Sci 2017;6(2):84-94.
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Nikić, Marta, Aleksandar Opančar, Florian Hartmann, Ludovico Migliaccio, Marie Jakešová, Eric Daniel Głowacki, and Vedran Đerek. "Micropyramid structured photo capacitive interfaces." Nanotechnology 33, no. 24 (March 23, 2022): 245302. http://dx.doi.org/10.1088/1361-6528/ac5927.

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Abstract Optically driven electronic neuromodulation devices are a novel tool in basic research and offer new prospects in medical therapeutic applications. Optimal operation of such devices requires efficient light capture and charge generation, effective electrical communication across the device’s bioelectronic interface, conformal adhesion to the target tissue, and mechanical stability of the device during the lifetime of the implant—all of which can be tuned by spatial structuring of the device. We demonstrate a 3D structured opto-bioelectronic device—an organic electrolytic photocapacitor spatially designed by depositing the active device layers on an inverted micropyramid-shaped substrate. Ultrathin, transparent, and flexible micropyramid-shaped foil was fabricated by chemical vapour deposition of parylene C on silicon moulds containing arrays of inverted micropyramids, followed by a peel-off procedure. The capacitive current delivered by the devices showed a strong dependency on the underlying spatial structure. The device performance was evaluated by numerical modelling. We propose that the developed numerical model can be used as a basis for the design of future functional 3D design of opto-bioelectronic devices and electrodes.
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7

Ichinose, Noboru. "Fields of Opto-Electronic Materials and Devices." JOURNAL OF THE ILLUMINATING ENGINEERING INSTITUTE OF JAPAN 84, no. 1 (2000): 12–21. http://dx.doi.org/10.2150/jieij1980.84.1_12.

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8

Vlad, V. I. "Opto-electronic Bistable Devices for Image Processing." Optica Acta: International Journal of Optics 32, no. 9-10 (September 1985): 1235–50. http://dx.doi.org/10.1080/713821835.

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Ueda, O. "Degradation of III–V Opto‐Electronic Devices." Journal of The Electrochemical Society 135, no. 1 (January 1, 1988): 11C—22C. http://dx.doi.org/10.1149/1.2095535.

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10

Heeger, Alan J., and James Long. "Opto-electronic Devices Fabricated from Semiconducting Polymers." Optics and Photonics News 7, no. 8 (August 1, 1996): 23. http://dx.doi.org/10.1364/opn.7.8.000023.

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Дисертації з теми "Opto-electronic Devices"

1

Russell, Ben. "Modelling of novel opto-electronic devices." Thesis, University of York, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.444759.

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Rajagopalan, Dharmashankar. "Opto-Electronic Processes in SrS:Cu ACTFEL Devices." UKnowledge, 2006. http://uknowledge.uky.edu/gradschool_theses/273.

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The a. c. thin film electroluminescent (ACTFEL) devices are of scientific interest due to their applications in large area, flat panel displays. Of particular interest to the research community is the mechanism of electron transport and luminance in these devices. Toward this end, a physical model and a mathematical model for SrS:Cu ACTFEL Devices were developed and published earlier by our group. The purpose of this thesis is to obtain a qualitative and quantitative match between experiment and theory. A brief summary of the model can be found here [1]. Effects of variation in drive parameters in experimental steady state measurements, and analysis of VIL (Voltage-Current-Luminance) plots for different simulated device and drive parameters are performed. The effects of voltage amplitude, activator concentration, interface energy levels, and critical field for dipole collapse were studied. The plots matched qualitatively in that all major experimental features were produced in the simulated waveforms. The measured and the simulated peak currents are 72.5 mA/cm2 and 66.42 mA/cm2 for VA = 123 V. Experimental and theoretical charge transferred per pulse were 2.75 C/cm2 and 2.26 C/cm2. Peak experimental and simulated luminance values for VA = 123 V were 531 cd/m2 and 49150 cd/m2. Total experimental and simulated luminance values for VA = 123 V case were 6.2 cd/m2 and 561.2 cd/m2 respectively. The large difference is attributed to the loss factors such as optical losses (due to total internal reflection), scattering of electrons by impurities in the bulk phosphor layer, and concentration quenching; these have not been incorporated in the model yet.
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3

Ali, Nazar Thamer. "Opto-electronic characterization of multi-terminal polysilicon switching devices." Thesis, University of Bradford, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.304120.

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4

Wang, Shouyin. "Characterisation of ZnSe and ZnCdSe/ZnSe opto-electronic devices." Thesis, Heriot-Watt University, 1994. http://hdl.handle.net/10399/1394.

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5

Thorat, Ruhi P. "Opto-Electronic Properties of Self-Contacted MoS2 Monolayer Devices." Ohio University / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1512731597427663.

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6

Toffanin, Stefano. "Multifunctional organic semiconductors as active materials for electronic and opto-electronic devices." Doctoral thesis, Università degli studi di Padova, 2009. http://hdl.handle.net/11577/3426094.

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Since the first discovery of the photoelectric effect in anthracene, organic compounds have been studied as multi-functional materials because of their capability of showing a variety of properties such as charge transport, light absorption/emission, photoconductivity, electroluminescence and superconductivity. The work presented in this Ph.D. thesis aims at studying different classes of ?-conjugated organic materials that present functional properties suitable for the realization of opto-electronic devices. In particular we focus our attention on the two specific properties that are deeply correlated to the molecular arrangement in the realization of nano-scale multifunctional devices: charge transport and light emission. In the technologically appealing thin-films, the molecular arrangement is extremely sensitive to the deposition procedures and to the nature of the substrate. Thus, of great interest is the understanding at the micro- and nano-scale of the molecular architecture and morphological features which favour charge transport and/or energy transfer, in order to enhance performances of opto-electronic devices based on thin films. We show that in general linear ?-oligothiophenes can organize advantageously in thin-films in so as to guarantee the proper overlap between molecular orbitals which enables efficient field-effect charge transport. Introducing a new class of branched oligothiophenes (namely spider-like oligothiophenes) we aim at studying how complex 3D molecular architecture can affect optical emission, supermolecular organization and charge transport properties. Investigation on the enhancement of light emission efficiency of organic molecular systems is then carried out presenting a new host-guest lasing system obtained by co-evaporation of an oligo(9,9-diarylfluorene) derivative (T3, donor) with a well-known red-emitter dye (DCM, acceptor). In this binary blend, an efficient Förster energy transfer takes place from the T3 matrix to the dye molecules when the dye concentration is properly optimized. Moreover the mirrorless lasing measurements reveal that amplified spontaneous emission threshold of the 2% DCM:T3 sample is almost an order of magnitude lower than the 2% DCM:Alq3 model system measured in the same experimental conditions. The possibility of combining different functionalities in a single device is of great relevance for the further development of organic electronics in integrated components and circuitry. Organic light-emitting transistors (OLETs) have been demonstrated to be able to combine in a single device the electrical switching functionality of a field-effect transistor and the capability of light generation. When organic materials are implemented as active layers in device realization, interfaces formed by different materials are intrinsically important. The comprehension of the physics behind each interface is a crucial point to design new materials for device applications or to improve the performances of the existing ones Here we present a new approach for realizing ambipolar light-emitting transistor. In the heterostructure we propose the first layer and third layers are optimized for field-effect charge (electrons and holes) transport. The second layer is formed by a host-guest matrix with high optical performance and showing amplified spontaneous emission under optical pumping. The specificity of the presented tri-layer based OLET is the intrinsic separation of the charge transport region from the exciton formation region thus preventing completely the exciton-carrier quenching. The optimization of the charge transport and light emission properties allows the realization of a tri-layer heterojunction presenting balanced electron and hole mobility (~10-1-10-2 cm2/Vs), high charge carrier density in correspondence of the maximum electroluminescence emission (~ 1 KA/cm2) and intense light generation.
Fin dalla scoperta dell’effetto fotoelettrico nell’antracene, i composti organici sono stati studiati come materiali multifunzionali data la loro capacità di mostrare una varietà di proprietà differenti, come il trasporto di carica, emissione/assorbimento di luce, fotoconduttività, elettroluminescenza e superconduttività. Il lavoro presentato in questa tesi di dottorato si prefigge lo scopo di studiare differenti classi di materiali organici ? coniugati che presentino le proprietà funzionali adatte per la realizzazione di dispositivi optoelettronici. In particolare viene prestata particolare attenzione allo studio di due specifiche proprietà che sono profondamente connesse con l’organizzazione molecolare nei dispositivi multifunzionali con dimensioni nanometriche: il trasporto di carica e l’emissione di luce. Nei film sottili, univocamente considerati interessanti dal punto di vista tecnologico, l’organizzazione molecolare è fortemente dipendente dai processi di deposizione e dalla natura del substrato. Per aumentare le prestazioni dei dispositivi basati sui film sottili risulta fondamentale comprendere le strutture supermolecolari e le caratteristiche morfologiche su scala micro- e nanometrica che possono favorire il trasporto di carica e/o i processi di trasferimento di energia. Si dimostra che in generale gli oligotiofeni lineari depositati in film sottile possano organizzarsi vantaggiosamente in modo da garantire l’opportuna sovrapposizione tra gli orbitali molecolari che permette un efficiente trasporto di carica. Introducendo una nuova classe di oligotiofeni ramificati, denominati spider-like, ci proponiamo di studiare come una complessa architettura 3D possa modificare le proprietà di emissione, di organizzazione supermolecolare e di trasporto. Si procede quindi ad indagare la possibilità di aumentare l’efficienza di emissione di luce di sistemi organici molecolari mediante l’introduzione di un nuovo sistema host-guest con proprietà di lasing ottenuto sublimando un derivato diarilfluorenico (T3, donore) con una noto colorante emettitore nel rosso (DCM, accettare). In questa soluzione solida binaria, si verifica un efficiente trasferimento di energia alla Förster tra la matrice di T3 e le molecole di colorante quando la concentrazione di colorante viene opportunamente ottimizzata. Inoltre, la soglia di emissione spontanea amplificata del campione avente le molecole di DCM disperse al 2% in peso nel T3 risulta quasi un ordine di grandezza più bassa rispetto a quella del campione modello misurato nelle stesse condizioni sperimentali avente la stessa concentrazione in peso si molecole di DCM disperse in una matrice di Alq3. La possibilità di combinare diverse proprietà funzionali in un unico dispositivo risulta di notevole interesse per un ulteriore sviluppo dell’elettronica organica nei componenti integrati e nei circuiti. Si è dimostrato che i transistor organici ad emissione di luce sono capaci di combinare in un singolo dispositivo le proprietà di switch dei transistor ad effetto di campo con la capacità di generare luce. Quando i materiali organici vengono utilizzati come strati attivi nei dispositivi, le interfacce formate dai diversi materiali assumono un ruolo di primaria importanza. La comprensione dei processi fisici che avvengono ad ogni interfaccia è cruciale per disegnare nuovi materiali per dispositivi o per aumentare le prestazioni quelli già esistenti. In questo lavoro di tesi viene presentato un nuovo approccio per realizzare transistor ambipolari ad emissione di luce. Nell’eterogiunzione che viene proposta il primo e il terzo strato sono dedicati al trasporto di portatori di carica (elettroni e lacune) per effetto di campo mentre il secondo strato è formato da una soluzione solida host-guest che mostra efficiente emissione di luce ed emissione spontanea di luce se pompata otticamente. La specificità dell’approccio che presentiamo è che le regioni di trasporto di carica sono fisicamente separate da quella in cui avviene la formazione dell’eccitone. In questo modo viene ridotta completamente l’interazione tra l’eccitone e il portatore di carica. Dopo aver ottimizzato il trasporto di carica e le proprietà di emissione di luce, si è potuto realizzare un dispositivo basato sull’eterogiunzione a tre strati che presenta valori di mobilità per gli elettroni e le lacune bilanciati (~10-1-10-2 cm2/Vs), alta densità di portatori di carica in corrispondenza del massimo di elettroluminescenza (~ 1 KA/cm2) e intensa emissione di luce.
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7

Wallace, Chik-Ho Choy. "Modelling and electro-optic quantum-wells modulation devices." Thesis, University of Surrey, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.267967.

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8

Billa, Muralidhar Reddy. "Liquid crystalline organic semiconductors for application in opto-electronic devices." Thesis, University of Hull, 2015. http://hydra.hull.ac.uk/resources/hull:11267.

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The synthesis and evaluation of novel photo-reactive liquid crystalline materials that exhibit light emitting, charge transporting and photovoltaic properties is described. Low-molar-mass liquid crystalline monomers, based on a series of substituted thiophenes, thieno[3,2-b]thiophenes, benzo[1,2-b:4,5-b']dithiophene, 4,7-dibromobenzo- 1,2,5-thiadiazole, fluorenes and carbazoles have been synthesised. Most of the materials synthesised incorporate two 9-octyl carbazole end groups at 3 positions. Some of the materials synthesised incorporate methacrylate end groups attached to the peripheries of the molecule at the end of flexible aliphatic chains. Polymerisation of these end groups allows the production of multilayer OLEDs with a very small pixel size due to the insoluble cross-linked network obtained after photo-polymerisation. The creation and analysis of novel multi-layer OLEDs with exceptionally small pixal size was possible by the incorporation of photo-polymerizable group into the liquid crystalline compounds. The molecular core incorporates either a 9-octyl carbazole end groups at the two ends of a fluorene moiety or an N-alkyl-substituted carbazole in the centre of the molecule. The presence of these two new types of liquid crystalline monomers for use as polymer networks in OLEDs should lead to higher electrochemical stability towards oxidation and thereby give rise to longer life-times in OLEDs containing them. Exceptinally, several of these novel OLED materials exhibit blue photoluminescence and electroluminescence, enabling their incorporation into multicolour OLEDs. This thesis details the synthesis of two different types of molecular central moieties, i.e., fluorene and carbazole with photopolymerisable end groups or 9-octyl carbazole end groups for implementation as initiators in multilayer organic devices. The photo reactive end groups are based on the acrylate moieties.
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9

Bao, Weixiao. "Liquid crystalline organic semiconductors for application in opto-electronic devices." Thesis, University of Hull, 2014. http://hydra.hull.ac.uk/resources/hull:10866.

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This thesis collates and describes the research work carried out during my PhD programme. This work of research is mainly based on the synthesis and evaluations of novel liquid crystalline materials for use in plastic electronic applications, such as Organic Light Emitting Diode (OLED) and Organic Photovoltaic (OPV) devices. It also focuses on the study of the relationship between chemical structures and the mesomorphic behaviour, the liquid crystalline transition temperatures and energy levels of these new compounds. Optical Polarising Microscopy (OPM) and Differential Scanning Calorimetry (DSC) were used to identify the mesomophic behaviour and transition temperatures of all the new liquid crystals. A combination of UV-vis absorption and Cyclic Voltammetry (CV) was used to characterize the Highest Occupied Molecular Orbitals (HOMO), Lowest Occupied Molecular Orbitals (LUMO) energy levels and, therefore, the band gap (Eg) of the final compounds. Another primary focus of this work was the study and application of various aryl-aryl, cross-coupling reaction methods, including the Stille and the Suzuki reactions and a new direct arylation method. The reaction conditions were optimised during the research work for different compounds. The direct arylation method was found to be a successful and efficient way to synthesise new thiophene derivatives using aryl halides via C-H bond activation by palladium catalysts, but unfortunately not for all substrates. A series of fluorene- and carbazole-based materials have been developed for use as hole-transporting materials and electroluminescent materials in plastic electronic applications. Some of these materials exhibit nematic phases, which is beneficial due to the lower viscosity present in the nematic phase compared to that of the smectic phases. Some of them are found to form a glass above room temperature without any observable liquid crystal phases, despite significant supercooling below the melting point. The transition temperatures and mesomorphic behaviours of these novel materials were determined. The materials are expected to exhibit appropriate ionization potential (IP) and energy levels (HOMO, LUMO and Eg). A number of compounds incorporating a thiophene-based central core have been synthesized and evaluated as hole-transporting materials in OLEDs or/and as electron-donors in OPVs hopefully with the required appropriate energy levels. A compound with four 2,5-disubstituted thiophene rings in the molecular core shows promising properties for use as an electron-donor material with PCBM as an electron-acceptor in test OPV cells fabricated by members in the Organic Semiconductor Group in the Department of Physics at the University of Hull. Several liquid crystals based on thiazolo[5,4-d]thiazole central cores were synthesised by various aryl-aryl cross-coupling reaction pathways. The thiazolo-thiazole compounds based on five-membered rings only exhibit a nematic phase, while some thiazolo-thiazole compounds incorporating six-membered rings exhibit both a smectic phase and a nematic phase. However, this class of compounds exhibit relatively high melting points and liquid crystalline transition temperatures, as well as a very poor solubility, which indicates that they were not able to be used as organic semiconductors in plastic electronics applications. A class of oxadiazole homologues and a small number of isoxazole derivatives were successfully synthesized and purified. They were expected to possess relatively high electron affinity (EA) and strong fluorescence as potential materials for use as electron-transporting layers and/or emissive layers in OLEDs. The mesomorphic behaviour of these compounds is interesting and includes an unidentified SmX phase and a banana phase. The relationships between the chemical structures and mesomorphic behaviours of these materials were established.
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10

Mossanen-Shams, Iden. "Investigation of two opto-electronic sensing devices for determination of position." Thesis, Brunel University, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.334351.

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Книги з теми "Opto-electronic Devices"

1

Limited, Ferranti Electronics. Opto-electronic devices. Chadderton: Ferranti Electronics Ltd, 1985.

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2

International Symposium on Opto-Electronic Imaging (1985 New Delhi, India). Opto-electronic imaging: Proceedings of the International Symposium on Opto-Electronic Imaging, December 2-5, 1985, New Delhi, India. Edited by Juyal D. P. 1941-, Mehta P. C. 1943-, Sharma M. K. 1941-, Instruments Research and Development Establishment., India. Ministry of Defence. Research and Development Organisation., and Optical Society of India. Dehra Dun: Instruments Research and Development Establishment, 1987.

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3

Mossanen-Shams, Iden. Investigation of two opto-electronic sensing devices for determination of position. Uxbridge: Brunel University, 1993.

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4

Handbook of organic materials for optical and (opto)electronic devices: Properties and applications. Oxford: Woodhead Publishing, 2013.

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5

Collins, John Vincent. Investigation into low cost methods of coupling semiconductor opto-electronic devices to optical fibres. Birmingham: University of Birmingham, 1999.

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6

International Seminar on Laser and Opto-Electronic Technology in Industry (1986 Xiamen, Xiamen Shi, China). International Seminar on Laser and Opto-Electronic Technology in Industry: State-of-the-art review, 25-28 June, 1986, Xiamen, China. Edited by Fagan William F, Ke Jingtang, Pryputniewicz Ryszard J, and Zhongguo guang xue xue hui. Quan xi he guang xin xi chu li zhuan ye wei yuan hui. Bellingham, Wash., USA: SPIE--the International Society for Optical Engineering, 1987.

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Fachtagung Schichtsysteme für Zukünftige Bauelemente der Mikro-, Opto-, Bioelektronik und Optik (2nd 1989? Technische Universität Karl-Marx-Stadt). 2. Fachtagung Schichtsysteme für Zukünftige Bauelemente der Mikro-, Opto-, Bioelektronik und Optik. Karl-Marx-Stadt: Technische Universität Karl-Marx-Stadt, 1989.

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8

Nonlinear Optical (NLO) Polymer Opto-Electronic Devices. Storming Media, 2000.

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9

Ostroverkhova, Oksana. Handbook of organic materials for optical and (opto)electronic devices. Woodhead Publishing Limited, 2013. http://dx.doi.org/10.1533/9780857098764.

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10

Structural Dynamics of Micro- and Opto-Electronic Systems. Wiley, 2009.

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Частини книг з теми "Opto-electronic Devices"

1

Pocholle, J. P., and M. H. Carpentier. "Solid-state opto-electronic devices." In The Microwave Engineering Handbook, 341–48. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4899-4552-5_16.

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2

McCarthy, Mary, Simon Fabbri, and Andrew Ellis. "Signal Processing Using Opto-Electronic Devices." In Springer Series in Optical Sciences, 291–323. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-14992-9_10.

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3

Wheatley, P., M. Whitehead, P. J. Bradley, G. Parry, J. E. Midwinter, P. Mistry, M. A. Pate, and J. S. Roberts. "Hard Limiting Opto-electronic Logic Devices." In Photonic Switching, 69–72. Berlin, Heidelberg: Springer Berlin Heidelberg, 1988. http://dx.doi.org/10.1007/978-3-642-73388-8_12.

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4

Claeys, Cor, and Eddy Simoen. "Opto-Electronic Components for Space." In Radiation Effects in Advanced Semiconductor Materials and Devices, 281–330. Berlin, Heidelberg: Springer Berlin Heidelberg, 2002. http://dx.doi.org/10.1007/978-3-662-04974-7_8.

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5

Masterov, A. V., V. N. Tolkov, and V. G. Yakhno. "Spatio-Temporal Structures in Opto-Electronic Devices." In Nonlinear Waves 1, 168–84. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-74289-7_12.

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6

Woods, J. "II–VI electroluminescent devices." In Widegap II–VI Compounds for Opto-electronic Applications, 297–322. Boston, MA: Springer US, 1992. http://dx.doi.org/10.1007/978-1-4615-3486-0_12.

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7

Karaağaç, H., E. Peksu, B. Alhalaili, and M. Saif Islam. "One-Dimensional Silicon Nano-/microstructures Based Opto-Electronic Devices." In Topics in Applied Physics, 731–66. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-93460-6_26.

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8

Kazemifard, Nafiseh, Behzad Rezaei, and Zeinab Saberi. "Conventional Technologies and Opto-electronic Devices for Detection of Food Biomarkers." In Biosensing and Micro-Nano Devices, 169–96. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-16-8333-6_7.

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9

Nishizawa, J. i., and K. Suto. "Preparation of widegap II–VI homojunction devices by stoichiometry control." In Widegap II–VI Compounds for Opto-electronic Applications, 323–50. Boston, MA: Springer US, 1992. http://dx.doi.org/10.1007/978-1-4615-3486-0_13.

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Pugliesi, I., P. Krok, A. Błaszczyk, M. Mayor, and E. Riedle. "Naphthalene Bisimides: on the Way to Ultrafast Opto-electronic Devices." In Springer Series in Chemical Physics, 628–30. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-95946-5_204.

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Тези доповідей конференцій з теми "Opto-electronic Devices"

1

"Opto electronic devices." In 2009 67th Annual Device Research Conference (DRC). IEEE, 2009. http://dx.doi.org/10.1109/drc.2009.5354976.

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2

Ikegami, Tetsuhiko. "Opto-Electronic Devices --What's Missing--." In 1991 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1991. http://dx.doi.org/10.7567/ssdm.1991.a-0-3.

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3

Thylen, Lars, Per Arve, Bjorn Hessmo, Petter Holmstrom, Petter Janes, Anders Karlsson, and Min Qiu. "Progress in Opto-Electronic Devices." In Asia-Pacific Optical and Wireless Communications. SPIE, 2004. http://dx.doi.org/10.1117/12.525436.

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4

Shen, G. D., Y. X. Chen, B. F. Cui, J. J. Li, J. Han, B. L. Guan, X. Guo, et al. "High-efficiency active opto-electronic devices." In Photonics Asia 2007, edited by Lianghui Chen, Hiroyuki Suzuki, Paul T. Rudy, and Ninghua Zhu. SPIE, 2007. http://dx.doi.org/10.1117/12.784829.

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5

Bosman, Erwin, Geert Van Steenberge, Jeroen Missine, Bram Van Hoe, and Peter Van Daele. "Packaging of opto-electronic devices for flexible applications." In OPTO, edited by Alexei L. Glebov and Ray T. Chen. SPIE, 2010. http://dx.doi.org/10.1117/12.841553.

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6

Bahl, M., E. Heller, J. S. Ayubi-Moak, W. C. Ng, R. Scarmozzino, G. Letay, and L. Schneider. "Mixed-level simulation of opto-electronic devices." In 2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). IEEE, 2016. http://dx.doi.org/10.1109/nusod.2016.7547050.

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7

Sharma, Sudhir K., V. K. Sharma, Avinashi Kapoor, K. N. Tripathi, S. C. K. Misra, and Subhas Chandra. "Polymeric thin film micro-opto-electronic devices." In Indo-Russian Workshop on Micromechanical Systems, edited by Vladimir I. Pustovoy and Vinoy K. Jain. SPIE, 1999. http://dx.doi.org/10.1117/12.369459.

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Tsang, W. T. "Future Prospects of Opto-Electronic Devices and Processings." In 1991 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1991. http://dx.doi.org/10.7567/ssdm.1991.d-1-1.

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9

Kasahara, K., I. Ogura, and Y. Yamanaka. "Progress in Arrays of Opto-Electronic Bistable Devices and Sources." In Optical Computing. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/optcomp.1991.ma1.

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Анотація:
With recent progress in semiconductor arrays of opto-electronic bistable devices and sources, highly parallel optical interconnections and information processing has gradually become a reality. The Vertical to Surface Transmission Electro-Photonic device, or VSTEP, is a concept proposed to meet these requirements1). The essential ideas for the VSTEP are electrophotonic interfusion at the device level and the resulting performance efficiency improvements in power consumption and uniformity for two-dimensional matrix integration.
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10

Kaul, Anupama B. "Chemically and mechanically exfoliated MoS2 for electronic & opto-electronic devices." In 2016 Lester Eastman Conference on High Performance Devices (LEC). IEEE, 2016. http://dx.doi.org/10.1109/lec.2016.7578920.

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Звіти організацій з теми "Opto-electronic Devices"

1

Brandelik, Joseph. Nonlinear Optical (NLO) Polymer Opto-Electronic Devices. Fort Belvoir, VA: Defense Technical Information Center, July 2000. http://dx.doi.org/10.21236/ada384482.

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2

Bulovic, Vladimir. PECASE: Nanostructure Hybrid Organic/Inorganic Materials for Active Opto-Electronic Devices. Fort Belvoir, VA: Defense Technical Information Center, January 2011. http://dx.doi.org/10.21236/ada547102.

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3

Osgood, Richard M., and Jr. Selective Processing Techniques For Electronic And Opto-Electronic Applications: Quantum-Well Devices and Integrated Optic Circuits. Fort Belvoir, VA: Defense Technical Information Center, September 1995. http://dx.doi.org/10.21236/ada299161.

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4

Osgood, Jr, and Richard M. Selective Processing Techniques for Electronics and Opto-Electronic Applications: Quantum-Well Devices and Integrated Optic Circuits. Fort Belvoir, VA: Defense Technical Information Center, February 1993. http://dx.doi.org/10.21236/ada262887.

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5

Mishra, Umesh K. The Study of the Materials Properties of LTG (Al) GaAs and its Electronic and Opto-Electronic Device Applications. Fort Belvoir, VA: Defense Technical Information Center, November 1995. http://dx.doi.org/10.21236/ada301931.

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