Добірка наукової літератури з теми "Non-polar III-Nitrides"
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Статті в журналах з теми "Non-polar III-Nitrides"
Lorenz, Katharina. "Ion Implantation into Nonconventional GaN Structures." Physics 4, no. 2 (May 16, 2022): 548–64. http://dx.doi.org/10.3390/physics4020036.
Повний текст джерелаLu, Hai, William J. Schaff, Lester F. Eastman, Volker Cimalla, Joerg Pezoldt, Oliver Ambacher, J. Wu, and Wladek Walukiewicz. "Growth of non-polar a-plane and cubic InN on r-plane sapphire by molecular beam epitaxy." MRS Proceedings 798 (2003). http://dx.doi.org/10.1557/proc-798-y12.6.
Повний текст джерелаIyer, Sandeep, David J. Smith, A. Bhattacharyya, K. Ludwig, and T. D. Moustakas. "Growth and Characterization of non-polar (11–20) GaN and AlGaN/GaN MQWs on R-plane (10–12) sapphire." MRS Proceedings 743 (2002). http://dx.doi.org/10.1557/proc-743-l3.20.
Повний текст джерелаДисертації з теми "Non-polar III-Nitrides"
Waltereit, Patrick. "(Al, Ga, In)N heterostructures grown along polar and non-polar directions by plasma-assisted molecular beam epitaxy." Doctoral thesis, [S.l.] : [s.n.], 2001. http://deposit.ddb.de/cgi-bin/dokserv?idn=963284975.
Повний текст джерелаRosales, Daniel. "Etude des propriétés optiques de nanostructures quantiques semi-polaires et non-polaires à base de nitrure de gallium (GaN)." Thesis, Montpellier, 2015. http://www.theses.fr/2015MONTS180/document.
Повний текст джерелаWe study the optical properties of (Al,Ga)N/GaN nanostructures grown along several crystallographic orientations. The involved orientations are: the non-polar (1-100) plane or m-plane; the semi-polar (1-101) or s-plane; and the semi-polar (11-22) plane. First, we focus on the study of the anisotropy of the optical response of quantum wells grown in m- and s-planes. Second, we evaluate the effects of the temperature on optical properties of these quantum wells by extensive utilization of the time-resolved photoluminescence technique. It allows to obtain information regarding the evolution of radiative and non-radiative phenomena with temperature. Concerning radiative decay times, we have discriminated the contributions of two recombination regimes: the recombinations of localized excitons characterized by a constant decay time; and the recombinations of free excitons whose decay time increases linearly with the temperature. For all samples studied here, the regime of recombination of localized excitons dominates at low temperature and the regime of recombination of free excitons dominates at high temperature. In addition, we characterized the quality of (Al,Ga)N/GaN interfaces by the determination of the density of localization states. The values are ranging between 10^11 cm-2 and 10^12 cm-2 in our samples. This study demonstrates that (11-22)-oriented quantum wells exhibit the lowest density, and we find that the optical properties of s-plane oriented wells are the less impacted by the non-radiative phenomena. Third, we concentrated on the characterization of nanostructures grown along (11-22) plane direction under very different growth conditions. By modifying them, it is possible to obtain either quantum dots, or quantum wires or quantum wells. The study of the exciton recombination dynamics in these (11-22)-oriented nanostructures reveals a temperature dependence of radiative decay times correlated with the dimensions of the confining potentials: it is constant for the quantum dots; proportional to square root of T for quantum wires; and linear for quantum wells. This study demonstrates the potentialities of the nanostructures grown on non-traditional orientations for optoelectronic applications
Chiang, Shu-yu, and 江書宇. "Polarization dependent photoluminescence of the non-polar III-nitrides." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/65716825314373764047.
Повний текст джерела國立中山大學
物理學系研究所
98
Polarization dependent photoluminescence (PL) study in 10K of m-plane III-nitrides was discussed in this thesis. Two samples were investigated: m-plane GaN film grown on m-sapphire substrate and m-plane InGaN film grown on m-GaN/m-sapphire substrate by plasma -assisted molecular beam epitaxy (PAMBE). Polarized luminescence characteristics were told by polarization dependent PL spectra in these two samples. Circular polarized, linear polarized and unpolarized laser sources were used to excite the samples. The results showed the PL intensity along the a-axis of the sample was stronger than along the c-axis with a polarization ratio with 65%; moreover, the peak positions showed polarization independent characteristic under a low temperature environment with 10K.
Тези доповідей конференцій з теми "Non-polar III-Nitrides"
As, D. J. "Recent developments on non-polar cubic group III nitrides for optoelectronic applications." In OPTO, edited by Manijeh Razeghi, Rengarajan Sudharsanan, and Gail J. Brown. SPIE, 2010. http://dx.doi.org/10.1117/12.846846.
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