Добірка наукової літератури з теми "NM TECHNOLOGY NODE"
Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями
Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "NM TECHNOLOGY NODE".
Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.
Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.
Статті в журналах з теми "NM TECHNOLOGY NODE"
Itani, Toshiro. "157 nm Lithography for 70 nm Technology Node." Japanese Journal of Applied Physics 41, Part 1, No. 6B (June 30, 2002): 4033–36. http://dx.doi.org/10.1143/jjap.41.4033.
Повний текст джерелаThompson, K., J. H. Booske, Y. B. Gianchandani, and R. F. Cooper. "Electromagnetic annealing for the 100 nm technology node." IEEE Electron Device Letters 23, no. 3 (March 2002): 127–29. http://dx.doi.org/10.1109/55.988813.
Повний текст джерелаOgawa, Yoshihiro. "Cleaning Technology for Advanced Devices beyond 20 nm Node." Solid State Phenomena 195 (December 2012): 7–12. http://dx.doi.org/10.4028/www.scientific.net/ssp.195.7.
Повний текст джерелаSHAHIDI, GHAVAM G. "ARE WE AT THE END OF CMOS SCALING?" International Journal of High Speed Electronics and Systems 16, no. 01 (March 2006): 3–8. http://dx.doi.org/10.1142/s0129156406003503.
Повний текст джерелаFeudel, Thomas. "Advanced Annealing Schemes for High-Performance SOI Logic Technologies." Materials Science Forum 573-574 (March 2008): 387–400. http://dx.doi.org/10.4028/www.scientific.net/msf.573-574.387.
Повний текст джерелаLi, Zongru, Christopher Jarrett Elash, Chen Jin, Li Chen, Jiesi Xing, Zhiwu Yang, and Shuting Shi. "Comparison of Total Ionizing Dose Effects in 22-nm and 28-nm FD SOI Technologies." Electronics 11, no. 11 (June 1, 2022): 1757. http://dx.doi.org/10.3390/electronics11111757.
Повний текст джерелаSuganaga, Toshifumi. "157 nm lithography with high numerical aperture lens for the 70 nm technology node." Journal of Micro/Nanolithography, MEMS, and MOEMS 1, no. 3 (October 1, 2002): 206. http://dx.doi.org/10.1117/1.1501565.
Повний текст джерелаAllgair, John, Benjamin Bunday, Aaron Cordes, Pete Lipscomb, Milt Godwin, Victor Vartanian, Michael Bishop, Doron Arazi, and Kye-Weon Kim. "Metrology Requirements for the 32 nm Technology Node and Beyond." ECS Transactions 18, no. 1 (December 18, 2019): 151–60. http://dx.doi.org/10.1149/1.3096443.
Повний текст джерелаWakabayashi, H., G. S. Samudra, I. J. Djomehri, H. Nayfeh, and D. A. Antoniadis. "Supply-voltage optimization for below-70-nm technology-node MOSFETs." IEEE Transactions on Semiconductor Manufacturing 15, no. 2 (May 2002): 151–56. http://dx.doi.org/10.1109/66.999586.
Повний текст джерелаTakeda, Eiji, Eiichi Murakami, Kazuyoshi Torii, Yutaka Okuyama, Eishi Ebe, Kenji Hinode, and Shin'ichiro Kimura. "Reliability issues of silicon LSIs facing 100-nm technology node." Microelectronics Reliability 42, no. 4-5 (April 2002): 493–506. http://dx.doi.org/10.1016/s0026-2714(02)00029-x.
Повний текст джерелаДисертації з теми "NM TECHNOLOGY NODE"
Bansal, Anil Kumar. "CMOS scaling considerations in sub 10-nm node multiple-gate FETS." Thesis, IIT Delhi, 2019. http://eprint.iitd.ac.in:80//handle/2074/8046.
Повний текст джерелаDeng, Jie. "Device modeling and circuit performance evaluation for nanoscale devices : silicon technology beyond 45 nm node and carbon nanotube field effect transistors /." May be available electronically:, 2007. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.
Повний текст джерелаSzucs, Anna. "Diminution of the lithographic process variability for advanced technology nodes." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAT129/document.
Повний текст джерелаThe currently used 193 nm optical lithography reaches its limits from resolution point of view. Itis despite of the fact that various techniques have been developed to push this limit as much aspossible. Indeed new generation lithography exists such as the EUV, but are not yet reliable to beapplied in mass production. Thus in orders to maintain a robust lithographic process for theseshrunk nodes, 28 nm and beyond, the optical lithography needs to be further explored. It ispossible through alternatives techniques: e.g. the RETs (Resolution Enhancement Techniques),such as OPC (Optical Proximity Correction) and the double patterning. In addition to theresolution limits, advanced technology nodes are dealing with increasing complexity of design andsteadily increasing process variability requiring more and more compromises.In the light of this increasing complexity, this dissertation work is addressed to mitigate thelithographic process variability by the implementation of a correction (mitigation) flow exploredmainly through the capability of computational lithography. Within this frame, our main objectiveis to participate to the challenge of assuring a good imaging quality for the process windowlimiting patterns with an acceptable gain in uDoF (usable Depth of Focus).In order to accomplish this task, we proposed and validated a flow that might be laterimplemented in the production. The proposed flow consists on simulation based detectionmethodology of the most critical patterns that are impacted by effects coming from the masktopography and the resist profile. Furthermore it consists of the mitigation and the compensationof these effects, once the critical patterns are detected. The obtained results on the completedflow are encouraging: a validated method that detects the critical patterns and then mitigates thelithographic process variability been developed successfully
Chen, Hsiu Pin, and 陳修斌. "Device-level Doping Profile Analysis for Saddle-fin Device in 30 nm DRAM Technology Node." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/u452zb.
Повний текст джерелаShi-HaoChen and 陳仕豪. "Performance Optimization of Gate-All-Around MOSFETs by Inner Spacers at 5 nm Technology Node." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/jg54wt.
Повний текст джерела國立成功大學
奈米積體電路工程碩士學位學程
106
The evolution of semiconductor technology has been progressed since Moore’s Law proposed in 1964. Dimension scaling is always the challenge for each technology node to reduce producing cost. With the continuous scaling of devices, short-channel effects are more and more severe in limiting the performance enhancement. Multi-gate struc-tures, which enhance the gate control on short-channel effects and optimize the electri-cal characteristics, can overcome the limitation; FinFET is generally applied for ad-vanced semiconductor fabrications. However, for sub-5 nm technology node, FinFETs can not offer the enough gate control, resulting in worse short-channel effects. On the other hand, GAA MOSFETs with the superior gate control of channel electrostatic are considered as a possible extension for the following technology nodes. Nevertheless, they increase the undesirable parasitic capacitances. In this thesis, an analytical model is used to calculate the parasitic capacitances caused by GAA MOSFETs. Next, the optimization by inner spacer is presented to re-duce the additional parasitic capacitances. Such methodology helps us to ensure that the improvement is effective and feasible. Then we use Synopsys TCAD to do the process simulations. GAA MOSFETs are processed with SiGe epitaxy. Electrical characteristic comparison for the devices with and without inner spacers is discussed. 5nm technology node in ITRS roadmap is the specification we adopt in this thesis. Different spacer lengths are the main topic; the longer spacers extend the effective channel length and improve short-channel effects. Furthermore, the future design, a new integration scheme featuring bulk Si-base and cost-effective fabrication, is proposed. To overcome the drawback of GAA MOSFETs compared to FinFET: the increase of parasitic capacitances, inner spacers are adopted in fabrication. The proposed process is feasible and promising in the future based on our preliminary data.
YADAV, PUNEET. "DESIGN AND ANALYSIS OF A LOW POWER AND HIGH PERFORMANCE 10T SRAM CELL AT 32 NM TECHNOLOGY NODE." Thesis, 2023. http://dspace.dtu.ac.in:8080/jspui/handle/repository/19835.
Повний текст джерела"Predictive Process Design Kits for the 7 nm and 5 nm Technology Nodes." Doctoral diss., 2019. http://hdl.handle.net/2286/R.I.55687.
Повний текст джерелаDissertation/Thesis
Doctoral Dissertation Electrical Engineering 2019
Meng-YenWu and 吳孟晏. "The Evaluation of 6T-SRAM for GAA MOSFETs and FinFETs at 7 nm and 10 nm Technology Nodes." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/x699be.
Повний текст джерела國立成功大學
微電子工程研究所
104
As the semiconductor industry continues to advance, it has encountered many physical limitations, mostly related to short-channel effects (SCEs). Below node 22, the multi-gate structure has become the solution to improve the gate controllability. In this thesis, we benchmark 6T-SRAM of GAA MOSFETs and FinFETs and present the performance of both devices. We find that GAA MOSFETs with stacking technique provide higher drive current (per pitch) than FinFETs do. However the intrinsic delay (CV/ID) property is contrary. Static random access memory (SRAM) occupies a large portion of die size and consumes most of the standby leakages. 6T-SRAM has been designed as different configurations for high density (HD), low voltage (LV) and high performance (HP). Using a calibrated compact model, we can project the SNM and writeability of the 6T-SRAM for both devices in different configurations. And the characteristics of 6T-SRAM for all combination are demonstrated. The yield estimation is also done by the calibrated macro-model. The yield estimation and the minimum cell operation voltage (Vmin) for all design combinations of SRAM are presented in this work. By adjusting the channel width of the pass-gate devices, we optimize the GAA MOSFET SRAM in LV configuration to improve Vmin. However, this method can not be used for FinFETs. Although it suffers from the area penalty, the GAA MOSFETs show the potential for SRAM design.
Книги з теми "NM TECHNOLOGY NODE"
Wang, Guilei. Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-15-0046-6.
Повний текст джерелаWang, Guilei. Investigation on Sige Selective Epitaxy for Source and Drain Engineering in 22 Nm CMOS Technology Node and Beyond. Springer Singapore Pte. Limited, 2020.
Знайти повний текст джерелаWang, Guilei. Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond. Springer, 2019.
Знайти повний текст джерелаBalasinski, Artur. Design for Manufacturability: From 1d to 4D for 90 22 NM Technology Nodes. Springer New York, 2016.
Знайти повний текст джерелаBalasinski, Artur. Design for Manufacturability: From 1D to 4D for 90–22 nm Technology Nodes. Springer, 2013.
Знайти повний текст джерелаBalasinski, Artur. Design for Manufacturability: From 1D to 4D for 90-22 Nm Technology Nodes. Springer London, Limited, 2013.
Знайти повний текст джерелаЧастини книг з теми "NM TECHNOLOGY NODE"
Tomita, Hiroshi, Yuji Yamada, Hidenobu Nagashima, Norio Ishikawa, and Yumiko Taniguchi. "New FEOL Cleaning Technology for Advanced Devices beyond 45 nm Node." In Solid State Phenomena, 185–88. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-46-9.185.
Повний текст джерелаWang, Guilei. "Strained Silicon Technology." In Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond, 9–21. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-15-0046-6_2.
Повний текст джерелаSaxena, Anmol, Vyom Saraf, and Rutu Parekh. "ASIC Implementation of a 16-Bit Brent–Kung Adder at 45 nm Technology Node." In Sustainable Technology and Advanced Computing in Electrical Engineering, 83–105. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-4364-5_8.
Повний текст джерелаAyush, Poornima Mittal, and Rajesh Rohilla. "Comparative Analysis of Current Sense Amplifier Architectures for SRAM at 45 nm Technology Node." In Advances in Data-Driven Computing and Intelligent Systems, 633–40. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-3250-4_48.
Повний текст джерелаMal, Agnish, Akshat Chitransh, Harsh Srivastava, Suraj Kumar Saw, and Vijay Nath. "Analysis of a Self-compensating, Low-Noise, Low-Power PLL Circuit @ 45-nm Technology Node." In Lecture Notes in Electrical Engineering, 361–70. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-2999-8_30.
Повний текст джерелаAhlawat, Siddhant, Siddharth, Bhawna Rawat, and Poornima Mittal. "A Comparative Performance Analysis of Varied 10T SRAM Cell Topologies at 32 nm Technology Node." In Modeling, Simulation and Optimization, 63–75. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-0836-1_5.
Повний текст джерелаTripathi, Suman Lata, Sobhit Saxena, Yogesh Kumar Verma, and Manoj Singh Adhikari. "Low Power Ge-Si0.7Ge0.3 nJLTFET and pJLTFET Design and Characterization in Sub-20 nm Technology Node." In Composite Materials, 199–212. First edition. | Boca Raton, FL : CRC Press, 2021.: CRC Press, 2020. http://dx.doi.org/10.1201/9781003080633-11.
Повний текст джерелаSingh, Shikha, and Yagnesh B. Shukla. "Design and Analysis of Low Power FinFET-Based Hybrid Full Adders at 16 nm Technology Node." In Intelligent Sustainable Systems, 631–41. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-2894-9_48.
Повний текст джерелаKaur, Ravneet, Charu Madhu, and Deepti Singh. "Impact of Buried Oxide Layer Thickness on the Performance Parameters of SOI FinFET at 22 nm Node Technology." In Advances in Intelligent Systems and Computing, 537–44. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-5903-2_54.
Повний текст джерелаRawat, Bhawna, and Poornima Mittal. "Investigating the Impact of Schmitt Trigger on SRAM Cells at 32 nm Technology Node for Low Voltage Applications." In Lecture Notes in Electrical Engineering, 53–63. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-6780-1_5.
Повний текст джерелаТези доповідей конференцій з теми "NM TECHNOLOGY NODE"
Tyminski, Jacek K., and Toshiharu Nakashima. "Technology qualification for 65-nm node." In Optical Microlithography XVIII. SPIE, 2005. http://dx.doi.org/10.1117/12.600246.
Повний текст джерелаEng, Yi-Chuen, and Jyi-Tsong Lin. "Advanced ¿-FET Technology for 45 nm Technology Node." In 2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IEEE, 2007. http://dx.doi.org/10.1109/ipfa.2007.4378081.
Повний текст джерелаChabala, Jan M., Suzanne Weaver, David W. Alexander, Maiying Lu, Nam-Wook Kim, and Damon M. Cole. "130-nm node mask development." In 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents. SPIE, 2001. http://dx.doi.org/10.1117/12.425102.
Повний текст джерелаRobinson, Tod, Andrew Dinsdale, Ron Bozak, Roy White, David A. Lee, and Ken Roessler. "Mask repair for the 65-nm technology node." In Photomask Technology 2005, edited by J. Tracy Weed and Patrick M. Martin. SPIE, 2005. http://dx.doi.org/10.1117/12.634758.
Повний текст джерелаLiebmann, Lars W., Jennifer Lund, Ioana C. Graur, Fook-Luen Heng, Carlos A. Fonseca, James Culp, and Allen H. Gabor. "Enabling the 70-nm technology node with 193-nm altPSM lithography." In Design, Process Integration, and Characterization for Microelectronics, edited by Alexander Starikov and Kenneth W. Tobin, Jr. SPIE, 2002. http://dx.doi.org/10.1117/12.475663.
Повний текст джерелаBorodovsky, Yan A., Richard E. Schenker, Gary A. Allen, Edita Tejnil, David H. Hwang, Fu-Chang Lo, Vivek K. Singh, Robert E. Gleason, Joseph E. Brandenburg, and Robert M. Bigwood. "Lithography strategy for 65-nm node." In Photomask and Next Generation Lithography Mask Technology IX, edited by Hiroichi Kawahira. SPIE, 2002. http://dx.doi.org/10.1117/12.476916.
Повний текст джерелаYoshikawa, Ryoji, Hiroyuki Tanizaki, Tomohide Watanabe, Hiromu Inoue, Riki Ogawa, Satoshi Endo, Masami Ikeda, Yoichiro Takahashi, and Hidehiro Watanabe. "257-nm wavelength mask inspection for 65-nm node reticles." In Photomask and Next Generation Lithography Mask Technology XI, edited by Hiroyoshi Tanabe. SPIE, 2004. http://dx.doi.org/10.1117/12.557725.
Повний текст джерелаLi, K., P. Liu, Q. Wang, I. Tee, and J. Teong. "Physical characterization challenges in 45 nm technology node." In 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IEEE, 2008. http://dx.doi.org/10.1109/ipfa.2008.4588202.
Повний текст джерелаKroyan, Armen, and Hua-Yu Liu. "Resolution enhancement technology requirements for 65-nm node." In Advanced Microelectronic Manufacturing, edited by Alexander Starikov. SPIE, 2003. http://dx.doi.org/10.1117/12.485486.
Повний текст джерелаDeschacht, D. "Interconnect design for a 32 nm node technology." In Technology of Integrated Systems in Nanoscale Era (DTIS). IEEE, 2011. http://dx.doi.org/10.1109/dtis.2011.5941410.
Повний текст джерела