Добірка наукової літератури з теми "Nitrogen Vacancies"
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Статті в журналах з теми "Nitrogen Vacancies"
Kuganathan, Navaratnarajah, Robin W. Grimes, and Alexander Chroneos. "Nitrogen-vacancy defects in germanium." AIP Advances 12, no. 4 (April 1, 2022): 045110. http://dx.doi.org/10.1063/5.0080958.
Повний текст джерелаVoronkov, V. V., and R. Falster. "Nitrogen interaction with vacancies in silicon." Materials Science and Engineering: B 114-115 (December 2004): 130–34. http://dx.doi.org/10.1016/j.mseb.2004.07.023.
Повний текст джерелаJackson, W. E., and Steven W. Webb. "Influence of substitutional nitrogen in synthetic saw-grade diamond on crystal strength." Journal of Materials Research 12, no. 6 (June 1997): 1646–54. http://dx.doi.org/10.1557/jmr.1997.0225.
Повний текст джерелаWang, Jiajia, Aibin Ma, Zhaosheng Li, Jinghua Jiang, Jianyong Feng, and Zhigang Zou. "Effects of oxygen impurities and nitrogen vacancies on the surface properties of the Ta3N5photocatalyst: a DFT study." Physical Chemistry Chemical Physics 17, no. 35 (2015): 23265–72. http://dx.doi.org/10.1039/c5cp03290c.
Повний текст джерелаMusic, Denis, Rajeev Ahuja, and Jochen M. Schneider. "Theoretical study of nitrogen vacancies in Ti4AlN3." Applied Physics Letters 86, no. 3 (January 17, 2005): 031911. http://dx.doi.org/10.1063/1.1854744.
Повний текст джерелаWang, Kaiyue, John W. Steeds, Zhihong Li, and Yuming Tian. "Photoluminescence Studies of Both the Neutral and Negatively Charged Nitrogen-Vacancy Center in Diamond." Microscopy and Microanalysis 22, no. 1 (January 13, 2016): 108–12. http://dx.doi.org/10.1017/s1431927615015500.
Повний текст джерелаMrózek, Mariusz, Mateusz Schabikowski, Marzena Mitura-Nowak, Janusz Lekki, Marta Marszałek, Adam M. Wojciechowski, and Wojciech Gawlik. "Nitrogen-Vacancy Color Centers Created by Proton Implantation in a Diamond." Materials 14, no. 4 (February 9, 2021): 833. http://dx.doi.org/10.3390/ma14040833.
Повний текст джерелаPriem, T., B. Beuneu, C. H. de Novion, R. Caudron, F. Solal, and A. N. Christensen. "() versus () type ordering of nitrogen vacancies in TiNx." Solid State Communications 63, no. 10 (September 1987): 929–32. http://dx.doi.org/10.1016/0038-1098(87)90342-5.
Повний текст джерелаAli, T., C. Rupprecht, R. T. Khan, E. Bauer, G. Hilscher та H. Michor. "The effect of nitrogen vacancies in La3Ni2B2N3−δ". Journal of Physics: Conference Series 200, № 1 (1 січня 2010): 012004. http://dx.doi.org/10.1088/1742-6596/200/1/012004.
Повний текст джерелаCheng, Yi-Bing, and Derek P. Thompson. "Role of Anion Vacancies in Nitrogen-Stabilized Zirconia." Journal of the American Ceramic Society 76, no. 3 (March 1993): 683–88. http://dx.doi.org/10.1111/j.1151-2916.1993.tb03660.x.
Повний текст джерелаДисертації з теми "Nitrogen Vacancies"
Calamba, Katherine. "Phase stability and defect structures in (Ti1-x,Alx)Ny hard coatings." Electronic Thesis or Diss., Université de Lorraine, 2019. http://www.theses.fr/2019LORR0322.
Повний текст джерелаThis study highlights the role of nitrogen vacancies and defect structures in engineering hard coatings with enhanced phase stability and mechanical properties for high temperature applications. Titanium aluminum nitride (Ti,Al)N based materials in the form of thin coatings has remained as an outstanding choice for protection of metal cutting tools due to its superior oxidation resistance and high-temperature wear resistance. High-temperature spinodal decomposition of metastable (Ti,Al)N into coherent c-TiN and c-AlN nm-sized domains results in high hardness at elevated temperatures. Even higher thermal input leads to transformation of c-AlN to w-AlN, which is detrimental to the mechanical properties of the coating. One mean to delay this transformation is to introduce nitrogen vacancies. In this thesis, I show that by combining a reduction of the overall N-content of the c-(Ti,Al)Ny (y < 1) coating with a low substrate bias voltage during cathodic arc deposition an even more pronounced delay of the c-AlN to w-AlN phase transformation is achieved. Under such condition, age hardening is retained until 1100 °C, which is the highest temperature reported for (Ti,Al)N films. During cutting operations, the wear mechanism of the cathodic-arc-deposited c-(Ti0.52Al0.48)Ny with N-contents of y = 0.92, 0.87, and 0.75 films are influenced by the interplay of nitrogen vacancies, microstructure, and chemical reactions with the workpiece material. The y = 0.75 coating contains the highest number of macroparticles and has an inhomogeneous microstructure after machining, which lower its flank and crater wear resistance. Age hardening of the y = 0.92 sample causes its superior flank wear resistance while the dense structure of the y = 0.87 sample prevents chemical wear that results in excellent crater wear resistance. Heteroepitaxial c-(Ti1-x,Alx)Ny (y = 0.92, 0.79, and0.67) films were grown on MgO(001) and (111) substrates using magnetron putter deposition to examine the details of their defect structures during spinodal decomposition. At 900 °C, the films decompose to form coherent c-AlN- and c-TiN- rich domains with elongated shape along the elastically soft <001> direction. Deformation maps show that most strains occur near the interface of the segregated domains and inside the c-TiN domains. Dislocations favorably aggregate in c-TiN rather than c-AlN because the later has stronger directionality of covalent chemical bonds. At elevated temperature, the domain size of (001) and (111)- oriented c-(Ti,Al)Ny films increases with the nitrogen content. This indicates that there is a delay in coarsening due to the presence of more N vacancies in the film. The structural and functional properties (Ti1-x,Alx)Ny are also influenced by its Al content (x). TiN and (Ti1-x,Alx)Ny (y = 1, x = 0.63 and x = 0.77) thin films were grown on MgO(111) substrates using magnetron sputtering technique. Both TiN and Ti0.27Al0.63N films are single crystals with cubic structure. (Ti0.23,Al0.77)N film has epitaxial cubic structure only in the first few atomic layers then it transitions to an epitaxial wurtzite layer, with an orientation relationship of c-(Ti0.23,Al0.77)N(111)[1-10]ǀǀw-(Ti0.23,Al0.77)N(0001)[11-20]. The w-(Ti0.23,Al0.77)N shows phase separation of coherent nm-sized domains with varying chemical composition during growth. After annealing at high temperature, the domains in w-(Ti0.23,Al0.77)N have coarsened. The domains in w-(Ti0.23,Al0.77)N are smaller compared to the domains in c-(Ti0.27,Al0.63)N film that has undergone spinodal decomposition. The results that emerged from this thesis are of great importance in the cutting tool industry and also in the microelectronics industry, because the layers examined have properties that are well suited for diffusion barriers
Частини книг з теми "Nitrogen Vacancies"
Dannefaer, S., V. Avalos, and Rositza Yakimova. "The Role of Nitrogen in the Annealing of Vacancies in 4H-SiC." In Materials Science Forum, 481–84. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.481.
Повний текст джерела"Effects of Vacancies, Nitrogen Atoms, and sp3 Bonds on Mechanical Properties of Graphene Using Molecular Dynamics Simulations." In Graphene Science Handbook, 57–76. CRC Press, 2016. http://dx.doi.org/10.1201/b19674-11.
Повний текст джерелаIto, Akihiko, and Shingo Okamoto. "Effects of Vacancies, Nitrogen Atoms, and sp3 Bonds on Mechanical Properties of Graphene Using Molecular Dynamics Simulations." In Graphene Science Handbook, 41–60. CRC Press, 2016. http://dx.doi.org/10.1201/b19674-5.
Повний текст джерелаТези доповідей конференцій з теми "Nitrogen Vacancies"
Lebiadok, Yahor V., Tatyana V. Bezyazychnaya, and Konstantin S. Zhuravlev. "Nitrogen vacancies in the GaN/AlN heterointerface." In SPIE Security + Defence, edited by Roberto Zamboni, François Kajzar, Attila A. Szep, and Katarzyna Matczyszyn. SPIE, 2016. http://dx.doi.org/10.1117/12.2241944.
Повний текст джерелаHarmon, N. J. "Single Photon Detection using Chromophores and Nitrogen Vacancies in Diamond." In 2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID). IEEE, 2018. http://dx.doi.org/10.1109/rapid.2018.8509007.
Повний текст джерелаPetravic, Mladen, Robert Peter, Ivna Kavre, Lu Hua Li, Ying Chen, Liang-Jen Fan, and Yaw-Wen Yang. "Decoration of nitrogen vacancies by oxygen atoms in boron nitride nanotubes." In Devices (COMMAD). IEEE, 2010. http://dx.doi.org/10.1109/commad.2010.5699748.
Повний текст джерелаIshida, Takashi, KyungPil Nam, Maciej Matys, Tsutomu Uesugi, Jun Suda, and Tetsu Kachi. "Improvement of Channel Property of GaN Vertical Trench MOSFET by Compensating Nitrogen Vacancies with Nitrogen Plasma Treatment." In 2020 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2020. http://dx.doi.org/10.7567/ssdm.2020.d-2-02.
Повний текст джерелаChipaux, Mayeul, Stéphane Xavier, Alexandre Tallaire, Jocelyn Achard, Sébastien Pezzagna, Jan Meijer, Vincent Jacques, Jean-François Roch, and Thierry Debuisschert. "Nitrogen vacancies (NV) centers in diamond for magnetic sensors and quantum sensing." In SPIE OPTO, edited by Manijeh Razeghi, Eric Tournié, and Gail J. Brown. SPIE, 2015. http://dx.doi.org/10.1117/12.2084082.
Повний текст джерелаHenshaw, Jacob, Pauli Kehayias, Maziar Saleh Ziabari, Tzu-Ming Lu, Sergei Ivanov, Edward Bielejec, Michael Lilly, and Andrew Mounce. "Nuclear Magnetic Resonance of Nano-scale quantum materials detected by Nitrogen vacancies in Diamond." In Proposed for presentation at the American Physical Society March Meeting 2021 Online held March 15-19, 2021. US DOE, 2020. http://dx.doi.org/10.2172/1831375.
Повний текст джерелаHussain, Syed Sajjad, Amatul Saboor Jawaid, Noor Ul Huda, Mohsin Khan, Ghazi Aman Nowsherwan, Saira Riaz, Syed Mutahir Hussain, and Shahzad Naseem. "Photoluminescence Comparison of Different Substrates on AlN: Cr Thin Films for Optoelectronic Devices." In International Symposium on Advanced Materials. Switzerland: Trans Tech Publications Ltd, 2022. http://dx.doi.org/10.4028/p-1265j6.
Повний текст джерелаLebiadok, Yahor, Alena Shalayeva, Ivan Aleksandrov, and Konstantin Zhuravlev. "Structure and Charge of Nitrogen and Gallium Vacancies Located in the AlN/GaN Interface of Quantim Wells." In 2018 International Conference Laser Optics (ICLO). IEEE, 2018. http://dx.doi.org/10.1109/lo.2018.8435251.
Повний текст джерелаSugie, T., S. Maejima, K. Yamashita, and M. Noda. "Improved endurance properties of MOD-made BaTiO3 thin film diode for ReRAM application by controlling oxygen vacancies in nitrogen annealing." In 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop (ISAF/ECAPD/PFM). IEEE, 2016. http://dx.doi.org/10.1109/isaf.2016.7578080.
Повний текст джерелаHussain, Syed Sajjad, Noor Ul Huda, Amatul Saboor Jawaid, Rabia Arooj, Mohsin Khan, Zain Fatima, Nabi Ur Rehman, et al. "Near UV and Visible Region Photoluminescence Curves Study for AlN Thin Film and AlN Nanopowder." In International Symposium on Advanced Materials. Switzerland: Trans Tech Publications Ltd, 2022. http://dx.doi.org/10.4028/p-98w423.
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