Дисертації з теми "Nitride Thin Films"
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Shu, Rui. "Nonstoichiometric Multicomponent Nitride Thin Films." Licentiate thesis, Linköpings universitet, Tunnfilmsfysik, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-170529.
Повний текст джерелаKhoshman, Jebreel M. "Spectroscopic ellipsometry charactarization of single and multilayer aluminum nitride / indium nitride thin film systems." Ohio : Ohio University, 2005. http://www.ohiolink.edu/etd/view.cgi?ohiou1129584189.
Повний текст джерелаKerdsongpanya, Sit. "Scandium Nitride Thin Films for Thermoelectrics." Licentiate thesis, Linköpings universitet, Tunnfilmsfysik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-85917.
Повний текст джерелаNeidhardt, Jörg. "Fullerene-like carbon nitride thin solid films /." Linköping : Univ, 2004. http://www.bibl.liu.se/liupubl/disp/disp2004/tek877s.pdf.
Повний текст джерелаSanchez, Mathon Gustavo. "Piezoelectric aluminum nitride thin films by PECVD." Limoges, 2009. https://aurore.unilim.fr/theses/nxfile/default/9224e391-3c48-4c10-9166-c2a2bed3c5f4/blobholder:0/2009LIMO4007.pdf.
Повний текст джерелаPolycrystalline aluminum nitride thin films were produced with a microwave-plasma enhanced chemical vapor deposition technique. The plasma-injector distance, the substrate temperature and the RF bias were the main variables which allowed achieving this objective. At the time, it was possible to control the preferential orientation as <0001> or <1010>, both interesting for piezoelectric applications. The growth mechanisms that conducted to film microstructure development under different process conditions were explained, enriched by the comparison with a physical vapor deposition sputtering technique. The obtained films were characterized in their piezoelectric performance, including the construction of surface acoustic wave devices and bulk acoustic wave devices. Adequate piezoelectric response and acoustic velocities were obtained for <0001> oriented films, while <1010> oriented films did not show piezoelectric response under the configurations essayed. An extensive analysis was done in order to explain these behaviors
Knight, Patrick J. "Nitride formation at silicon surfaces." Thesis, University of Southampton, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.238903.
Повний текст джерелаTaylor, Matthew Bruce, and matthew taylor@rmit edu au. "A Study of Aluminium Nitride and Titanium Vanadium Nitride Thin Films." RMIT University. Applied Science, 2007. http://adt.lib.rmit.edu.au/adt/public/adt-VIT20080529.151820.
Повний текст джерелаZhang, Xuefei. "Synthesis and Characterization of Zr1-xSixN Thin Film Materials." Fogler Library, University of Maine, 2007. http://www.library.umaine.edu/theses/pdf/ZhangX2007.pdf.
Повний текст джерелаAnutgan, Mustafa. "Investigation Of Plasma Deposited Boron Nitride Thin Films." Master's thesis, METU, 2007. http://etd.lib.metu.edu.tr/upload/12608611/index.pdf.
Повний текст джерелаJoelsson, Torbjörn. "Nanostructural design of transition metal nitride thin films /." Linköping : Dept. of physics and measurement technology, Univ, 2005. http://www.bibl.liu.se/liupubl/disp/disp2005/tek923s.pdf.
Повний текст джерелаRodil, Sandra Elizabeth. "Preparation and characterisation of carbon nitride thin films." Thesis, University of Cambridge, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621017.
Повний текст джерелаTsui, Hei Chit Leo. "Characterisation of scandium-based III-nitride thin films." Thesis, Imperial College London, 2016. http://hdl.handle.net/10044/1/43378.
Повний текст джерелаWang, Yimin. "Reactive Sputter Deposition of Molybdenum Nitride Thin Films." University of Cincinnati / OhioLINK, 2002. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1025108562.
Повний текст джерелаChan, Chit-yiu. "Nucleation and growth of cubic boron nitride thin films /." access full-text access abstract and table of contents, 2005. http://libweb.cityu.edu.hk/cgi-bin/ezdb/thesis.pl?phd-ap-b19887693a.pdf.
Повний текст джерела"Submitted to Department of Physics and Materials Science in partial fulfillment of the requirements for the degree of Doctor of Philosophy" Includes bibliographical references (leaves 147-154)
Maranon, Walter. "Characterization of Boron Nitride Thin Films on Silicon (100) Wafer." Thesis, University of North Texas, 2007. https://digital.library.unt.edu/ark:/67531/metadc3942/.
Повний текст джерелаRissanen, Leena. "Manufacturing and irradiation of thin transition metal nitride films." Doctoral thesis, [S.l. : s.n.], 1999. http://deposit.ddb.de/cgi-bin/dokserv?idn=963553887.
Повний текст джерелаTodi, Vinit O. "Investigation of reactively sputtered boron carbon nitride thin films." Doctoral diss., University of Central Florida, 2011. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5069.
Повний текст джерелаID: 030422822; System requirements: World Wide Web browser and PDF reader.; Mode of access: World Wide Web.; Thesis (Ph.D.)--University of Central Florida, 2011.; Includes bibliographical references (p. 112-130).
Ph.D.
Doctorate
Electrical Engineering and Computer Science
Engineering and Computer Science
LeClair, Patrick R. (Patrick Royce) 1976. "Titanium nitride thin films by the electron shower process." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/50025.
Повний текст джерелаGunasekar, Naresh Kumar. "Electron channelling contrast imaging of nitride semiconductor thin films." Thesis, University of Strathclyde, 2012. http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=18575.
Повний текст джерелаFager, Hanna. "Growth and Characterization of Amorphous Multicomponent Nitride Thin Films." Doctoral thesis, Linköpings universitet, Tunnfilmsfysik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-106576.
Повний текст джерелаKerdsongpanya, Sit. "Design of Transition-Metal Nitride Thin Films for Thermoelectrics." Doctoral thesis, Linköpings universitet, Tunnfilmsfysik, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-117760.
Повний текст джерелаSedan den industriella revolutionen har fossila bränslen varit vår huvudkälla till energi i motorer för transport, elproduktion och uppvärmning av byggnader. Eftersom mänskligheten och vår teknik växer för varje år som går, fortsätter efterfrågan på fossila bränslen att öka. Med tanke på att fossila bränslen inte är förnybara, riskerar vi att de tar slut. Dessutom är resultatet av denna ständiga förbränning av fossila bränslen generering av växthusgaser, t.ex. kolmonoxid och koldioxid, som orsakar klimatförändringar, som ett ytterligare problem. Således finns det ett ökande behov av nya former av energikällor som kan ersätta fossila bränslen. För närvarande finns det olika typer av tekniker för förnybar energi som solceller, vätgasteknik (bränsleceller), vindkraftverk, vattenkraft, etc. Ett annat koncept som har studerats är energiåtervinning, vilket innebär att fånga eller lagra spillenergi och förvandla det till användbar energi. Spillenergi är den energi, oftast värmeförluster, som förloras i generatorer, vibrationer från motorer, och så vidare. Ungefär 60% av den ursprungliga energin avges som spillvärme. Om vi kan återvinna all denna förlust till användbar energi igen, kan vi spara stora mängder bränslen utsläppen av koldioxid kommer att minska. Med hänsyn till dessa krav, så är termoelektriska komponenter intressanta kandidater. En termoelektriska komponent är tillverkad av material som direkt återvinner värme (en temperaturgradient) till elektrisk energi utan utsläpp av växthusgaser. De kan också kyla genom den omvända processen, när de genererar en temperaturgradient från en pålagd ström. Detta innebär att de kyler utan rörliga delar eller något kylmedel som kan orsaka miljöproblem. Verkningsgraden är emellertid låg, för närvarande 10% -15%, dessutom är de flesta av dagens termoelektriska material giftiga. Jag har därför studerat en ny klass av material, övergångsmetallnitrider, som en kandidat för termoelektriska tillämpningar. Övergångsmetallnitrider är kända för sina utmärkta mekaniska egenskaper, de används till exempel som beläggningar på skärverktyg i syfte att förbättra prestanda och livslängd. De uppvisar ocksåolika elektriska egenskaper (metaller, halvledare och supraledare). Min studie är inriktad på att förstå de termoelektriska egenskaperna hos övergångsmetallnitrider, främst skandiumnitrid och kromnitrid. Resultaten visar att båda materialen kan vara bra kandidater för termoelektriska tillämpningar.
Law, Ka Cheong. "Temperature parameter at synthesis of cubic boron nitride films." access abstract and table of contents access full-text, 2005. http://libweb.cityu.edu.hk/cgi-bin/ezdb/dissert.pl?msc-ap-b21174477a.pdf.
Повний текст джерелаAt head of title: City University of Hong Kong, Department of Physics and Materials Science, Master of Science in materials engineering & nanotechnology dissertation. Title from title screen (viewed on Sept. 1, 2006) Includes bibliographical references.
Maranon, Walter Nasrazadani Seifollah. "Characterization of boron nitride thin films on silicon (100) wafers." [Denton, Tex.] : University of North Texas, 2007. http://digital.library.unt.edu/permalink/meta-dc-3942.
Повний текст джерелаRibeiro, A. Tome. "A study of the i-transition in rf-sputtered titanium nitride films." Thesis, Cranfield University, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.386196.
Повний текст джерелаFarrell, Ian Laurence. "Growth of Metal-Nitride Thin Films by Pulsed Laser Deposition." Thesis, University of Canterbury. Physics and Astronomy, 2010. http://hdl.handle.net/10092/5011.
Повний текст джерелаSchmidt, Susann. "Carbon Nitride and Carbon Fluoride Thin Films Prepared by HiPIMS." Doctoral thesis, Linköpings universitet, Tunnfilmsfysik, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-90912.
Повний текст джерелаMangin, Weston T. "Nanoindentation Techniques for the Evaluation of Silicon Nitride Thin Films." DigitalCommons@CalPoly, 2016. https://digitalcommons.calpoly.edu/theses/1690.
Повний текст джерелаLorenzzi, Jean Carlos da Conceição. "Boron nitride thin films deposited by magnetron sputtering on Si3N4." Master's thesis, Universidade de Aveiro, 2007. http://hdl.handle.net/10773/2307.
Повний текст джерелаO Nitreto de boro é um material polimorfo, sendo as fases hexagonal (h-BN) ecúbicas (c-BN) as predominantes. A fase hexagonal do nitreto de boro apresenta uma estrutura em camadas sp2, semelhante a grafite, enquanto que a fase cúbica do nitreto de boro tem forte ligações sp3, como o diamante. O h- BN apresenta boas propriedades dieléctricas, é um material refractário, resistente a corrosão, é conhecido por ser um lubrificante sólido que tem aplicações na protecção de moldes de injecção e em outros processos mecânicos de elevadas temperaturas ou lubrificação em ambientes de elevada humidade. Contudo, o h-BN é extremamente macio. Em contraste, o c-BN apresenta excelentes propriedades térmicas, eléctricas e ópticas, sendo ainda um dos materiais conhecidos com dureza mais elevada (70 GPa). Além disso, c-BN apresenta propriedades superiores em relação ao diamante quando aplicado em ferramentas de corte na maquinagem de materiais ferrosos, devido a sua alta estabilidade química a altas temperaturas durante a maquinagem. Essa combinação de propriedades faz dele um forte candidato no campo das ferramentas de corte e em dipositivos electrónicos. No presente trabalho, filmes finos de nitreto de boro foram depositados por DC e RF magnetron sputtering, utilizando alvos de B4C e h-BN prensados a quente, numa atmosfera de deposição contituída por misturas de Ar e N2. Os filmes finos de BN foram depositados simultâneamente em dois tipos de substratos: cerâmicos de Si3N4 com diferentes acabamentos superficiais e em discos de Si(100). A influência dos parâmetros de deposição, tais como a temperatura do substrato, composição da atmosfera de deposição na espessura dos filmes, taxa de deposição, cristalinidade, tensão residual, fases presentes e dureza, foram sistematicamente investigados usando técnicas como, SEM, XRD, FT-IR e nanodureza. O h-BN foi a principal fase observada nas análises dos espectros de FT-IR e nos difractogramas de XRD. O estado de tensão dos filmes finos de BN films é estremamente afectado pela temperatura do substrato, composição do gás de trabalho e pelo acabamento superficial dos substratos. O estudo da influência da temperatura mostraram que a taxa de deposição aumenta com o aumento da temperatura do substrato. Tensões residuais elevadas ocorrem para altas concentrações de árgon e para substratos polidos em suspensão de diamante 15 μm. Nos espectros de FT-IR, a forma das bandas de vibração variam de uma forma alargada para uma configuração estreita, correspondendo a uma menor desordem da fase hexagonal do BN, devido a variação da composição da atmosfera de deposição. Os valores de dureza obtidos estão numa faixa que vai desde os valores do h-BN macio (6 GPa) até valores próximos dos limites encontrados para filmes contendo a fase cúbica (16 GPa ), acima de 40%. ABSTRACT: Boron nitride is a polymorphic material, the hexagonal (h-BN) and the cubic (c- BN) being its main crystalline structure. The hexagonal boron nitride has a layered sp2-bonded structure, similar to graphite, while the cubic boron nitride has a hard sp3-bonded diamond-like structure. h-BN presents good dielectric properties, refractoriness, corrosion-resistant characteristics, low friction and low wear rate, and it is a well-known solid lubricant which has wide applications in metal-forming dies and other metal working processes at high temperatures or lubrication in high relative humidity environments. However, h-BN is mechanically soft. In contrast, c-BN presents excellent thermal, electrical and optical properties, with a hardness up to 70 GPa. Moreover, c-BN is superior to diamond as cutting tool for ferrous materials due to its high thermal chemical stability during machining. In the present work, thin films of boron nitride have been deposited by D.C. and R.F. magnetron sputtering from hot-pressed B4C and h-BN targets, using mixtures of Ar and N2, as working gases. The BN thin films were deposited simultaneously on two different substrates: Si3N4 ceramics with different surface finishing and Si(100) wafers. The influence of parameters such as substrate temperature and working gas composition ratio, on film thickness, deposition rate, cristallinity, residual stress, phase composition and hardness, were systematically investigated using techniques like SEM, XRD, FT-IR and nanohardness. h-BN was the main observed phase. The stress-state of the thin BN films is largely affected by the substrate temperature, working gas composition and the substrate surface finishing. The substrate temperature studies show that the deposition rate increases with an increasing of the substrate temperature. Large high residual stresses are developed for higher argon ratios and for substrate finishing with 15 μm diamond paste. In the FT-IR spectra, the shape of the vibration band changes from broad to narrow, corresponding to a less disorder h-BN phase, due to the working gas composition. The hardness values obtained are typical in the range of a soft h-BN (6 GPa) to values approaching the limit of the range reported for films containing a fraction of cubic phase (16 GPa ) up to 40%.
Li, Zhiying. "Microbridge tests on galium[sic] nitride and parylene-c thin films /." View abstract or full-text, 2010. http://library.ust.hk/cgi/db/thesis.pl?MECH%202010%20LI.
Повний текст джерелаChan, Victory Tak Wah. "Temperature parameter at synthesis of cubic boron nitride films by chemical vapor desposition." access abstract and table of contents access full-text, 2005. http://libweb.cityu.edu.hk/cgi-bin/ezdb/dissert.pl?msc-ap-b21173989a.pdf.
Повний текст джерелаAt head of title: City University of Hong Kong, Department of Physics and Materials Science, Master of Science in materials engineering & nanotechnology dissertation. Title from title screen (viewed on Aug. 31, 2006) Includes bibliographical references.
Fong, Tsz Wang. "Surface roughness parameter at synthesis of cubic boron nitride films." access abstract and table of contents access full-text, 2005. http://libweb.cityu.edu.hk/cgi-bin/ezdb/dissert.pl?msc-ap-b21174143a.pdf.
Повний текст джерелаAt head of title: City University of Hong Kong, Department of Physics and Materials Science, Master of Science in materials engineering & nanotechnology dissertation. Title from title screen (viewed on Aug. 31, 2006) Includes bibliographical references.
Eyhusen, Sören. "Phase formation processes in the synthesis of boron nitride thin films." [S.l.] : [s.n.], 2005. http://webdoc.sub.gwdg.de/diss/2005/eyhusen.
Повний текст джерелаAwan, Shamshad Akhtar. "Electrical properties of RF magnetron-sputtered insulating silicon nitride thin films." Thesis, Keele University, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.311646.
Повний текст джерелаLong, Yi. "Hardness of nitride thin films made by ionised magnetron sputter deposition." Thesis, University of Cambridge, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.614990.
Повний текст джерелаGharavi, Mohammad Amin. "Nitride Thin Films for Thermoelectric Applications : Synthesis, Characterization and Theoretical Predictions." Licentiate thesis, Linköpings universitet, Tunnfilmsfysik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-136533.
Повний текст джерелаThe series name Linköping Studies in Science and Technology Licentiate Thesis is incorrect. The correct series name is Linköping Studies in Science and Technology Thesis.
Spitsyn, Alexey B. "Crystallization of diamond and diamond-like nitride films from gas phase /." free to MU campus, to others for purchase, 2003. http://wwwlib.umi.com/cr/mo/fullcit?p3099640.
Повний текст джерелаPiggins, Nicholas. "A study of the optical and electronic properties of amorphous silicon nitride." Thesis, University of Leicester, 1988. http://hdl.handle.net/2381/35764.
Повний текст джерелаChang, Ko-Min. "Two-carrier charge trapping and dielectric breakdown in thin silicon nitride films /." The Ohio State University, 1985. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487262825076869.
Повний текст джерелаChong, Yat Ming. "The study of cubic boron nitride/diamond composite films for sensing and mechanical applications /." access full-text access abstract and table of contents, 2009. http://libweb.cityu.edu.hk/cgi-bin/ezdb/thesis.pl?phd-ap-b23749003f.pdf.
Повний текст джерела"Submitted to Department of Physics and Materials Science in partial fulfillment of the requirements for the degree of Doctor of Philosophy." Includes bibliographical references (leaves 127-136)
Kabulski, Adam. "Aluminum nitride thin films and structures for piezoelectric microelectromechanical systems (PMEMS) applications." Morgantown, W. Va. : [West Virginia University Libraries], 2008. https://eidr.wvu.edu/etd/documentdata.eTD?documentid=5952.
Повний текст джерелаTitle from document title page. Document formatted into pages; contains vi, 70 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 67-70).
Sadowski, Grzegorz. "Multicomponent TiNbCrAl nitride films produced by DCMS and HiPIMS." Thesis, Linköpings universitet, Tunnfilmsfysik, 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-174701.
Повний текст джерелаJehanathan, Neerushana. "Thermal stability of plasma enhanced chemical vapor deposited silicon nitride thin films." University of Western Australia. School of Mechanical Engineering, 2007. http://theses.library.uwa.edu.au/adt-WU2007.0069.
Повний текст джерелаBamber, Matthew Joseph. "The structural and mechanical properties of transition metal nitride multilayer thin films." Thesis, University of Manchester, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.492041.
Повний текст джерелаArcher, Lucy Elizabeth. "Optical properties of ultra-thin niobium nitride films for single photon detectors." Thesis, Massachusetts Institute of Technology, 2017. http://hdl.handle.net/1721.1/112044.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references (pages 75-78).
In this thesis I made a study of the properties of reactively sputtered ultra-thin films of niobium nitride (NbN) and niobium titanium nitride (NbTiN). Using Variable Angle Spectral Ellipsometry (VASE), I found that the optical properties of NbN films appear to have a critical thickness above which the optical parameters stabilize. I also found that the deposition process has better stability over time for thicker films than for thinner ones; that is, when films are deposited weeks apart, the thinner films show more variation in thickness and optical properties than do the thicker films. The data also suggest that the crystallinity of the substrate upon which the NbN is deposited has a significant effect on the optical parameters. The set of films deposited for the optical study was also tested against a universal scaling law for thin film superconductors, which seems to support the existence of the critical thickness, below which the properties change significantly and do not conform to the power law scaling that holds for thicker films. Finally, I explored recipes for depositing NbTiN with our sputtering system, in the hope of creating films that have better properties than NbN to be used in device manufacturing. I was able to create films with the same properties as our current NbN films with minimal optimization, and further work in this area should result in NbTiN films that are better than our NbN films.
by Lucy Elizabeth Archer.
S.M.
Johnson, Saccha Ellen. "Atmospheric pressure chemical vapour deposition of titanium nitride from titanium tetrachloride and ammonia." Thesis, University of Southampton, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.242208.
Повний текст джерелаLiljeholm, Lina. "Reactive Sputter Deposition of Functional Thin Films." Doctoral thesis, Uppsala universitet, Fasta tillståndets elektronik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-175666.
Повний текст джерелаFrost, Robert Lewis. "Slow positron annihilation spectroscopy applied to the analysis of the semiconductor, silicide, and titanium nitride structures." Diss., Georgia Institute of Technology, 1990. http://hdl.handle.net/1853/17298.
Повний текст джерелаRen, Yuxing. "Experiments on the elastic size dependence of LPCVD silicon nitride /." View abstract or full-text, 2004. http://library.ust.hk/cgi/db/thesis.pl?MECH%202004%20REN.
Повний текст джерелаMoseley, Michael William. "Study of III-nitride growth kinetics by molecular-beam epitaxy." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/47641.
Повний текст джерелаLung, Kai Chun. "Cubic boron nitride/nanodiamond composite films for the application in SAW devices." access abstract and table of contents access full-text, 2005. http://libweb.cityu.edu.hk/cgi-bin/ezdb/dissert.pl?msc-ap-b21175020a.pdf.
Повний текст джерелаAt head of title: City University of Hong Kong, Department of Physics and Materials Science, Master of Science in materials engineering & nanotechnology dissertation. Title from title screen (viewed on Sept. 4, 2006) Includes bibliographical references.