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Статті в журналах з теми "Ni-Cr Thin Films"
Sethuraman, A. R., R. J. De Angelis, and P. J. Reucroft. "Diffraction studies on Ni–Co and Ni–Cr alloy thin films." Journal of Materials Research 6, no. 4 (April 1991): 749–54. http://dx.doi.org/10.1557/jmr.1991.0749.
Повний текст джерелаYAN, JIANWU, and JICHENG ZHOU. "THE OXIDATION AND THE ELECTRICAL PROPERTIES OF Ni–Cr THIN FILM AFTER RAPID THERMAL ANNEALING." International Journal of Modern Physics B 21, no. 26 (October 20, 2007): 4561–74. http://dx.doi.org/10.1142/s0217979207037934.
Повний текст джерелаLin, Ruei-Cheng, Tai-Kuang Lee, Der-Ho Wu, and Ying-Chieh Lee. "A Study of Thin Film Resistors Prepared Using Ni-Cr-Si-Al-Ta High Entropy Alloy." Advances in Materials Science and Engineering 2015 (2015): 1–7. http://dx.doi.org/10.1155/2015/847191.
Повний текст джерелаStearns, M. B., and C. H. Lee. "Dimensional effects in Ni‐Cr multilayered thin films." Journal of Applied Physics 61, no. 8 (April 15, 1987): 4064–66. http://dx.doi.org/10.1063/1.338528.
Повний текст джерелаVollaro, M. B., and D. I. Potter. "Phase formation in coevaporated NiCr thin films." Thin Solid Films 239, no. 1 (February 1994): 37–46. http://dx.doi.org/10.1016/0040-6090(94)90105-8.
Повний текст джерелаCho, Ki-Hyun, and Youngman Kim. "Elastic modulus measurement of multilayer metallic thin films." Journal of Materials Research 14, no. 5 (May 1999): 1996–2001. http://dx.doi.org/10.1557/jmr.1999.0269.
Повний текст джерелаZhou, Ji Cheng, and Jian Wu Yan. "Microstructure and Electrical Properties of Nano Ni-Cr Thin-Films Fabricated by Magnetron Co-Sputtering Techniques." Materials Science Forum 561-565 (October 2007): 1201–4. http://dx.doi.org/10.4028/www.scientific.net/msf.561-565.1201.
Повний текст джерелаCho, Nam Ihn, Se Jong Lee, Yo Seung Song, and Deuk Yong Lee. "Thermal Properties of Cr- and Ni- Silicide Thin Films." Solid State Phenomena 124-126 (June 2007): 189–94. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.189.
Повний текст джерелаPetley, Vijay, S. Sathishkumar, K. H. Thulasi Raman, G. Mohan Rao, and U. Chandrasekhar. "Microstructural and mechanical characteristics of Ni–Cr thin films." Materials Research Bulletin 66 (June 2015): 59–64. http://dx.doi.org/10.1016/j.materresbull.2015.02.002.
Повний текст джерелаVinayak, Seema, H. P. Vyas, and V. D. Vankar. "Microstructure and electrical characteristics of Ni–Cr thin films." Thin Solid Films 515, no. 18 (June 2007): 7109–16. http://dx.doi.org/10.1016/j.tsf.2007.03.011.
Повний текст джерелаДисертації з теми "Ni-Cr Thin Films"
Kneiß, Max, Marcus Jenderka, Kerstin Brachwitz, Michael Lorenz, and Marius Grundmann. "Modeling the electrical transport in epitaxial undoped and Ni-, Cr-, and W-doped TiO2 anatase thin films." American Institute of Physics, 2014. https://ul.qucosa.de/id/qucosa%3A31223.
Повний текст джерелаГрищенко, Вікторія Андріївна. "Вплив йонного опромінення на структурно-фазові перетворення в тонких плівках Cu/Cr, Ni/Cr, Ni/Cu/Cr при термічному відпалі". Master's thesis, КПІ ім. Ігоря Сікорського, 2020. https://ela.kpi.ua/handle/123456789/34696.
Повний текст джерелаMaster thesis: 81 pages, 41 figure, 12 tables, 38 references. The object of research is structural-phase transformations in nanolayer compositions Cu/Cr, Ni/Cr, Ni/Cu/Cr under conditions of vacuum thermal annealing and with additional ion-plasma action. The purpose is to study the peculiarities of the influence of preliminary ion plasma action on structural-phase transformations in thin films Cu/Cr, Ni/Cr, Ni/Cu/Cr under conditions of thermal annealing. Research methods: secondary-ion mass spectrometry, transmission electron microscopy, in-situ high-energy electron diffraction. The peculiarities of the formation of the structure and phase composition of the Cu/Cr, Ni/Cr and Ni/Cu/Cr systems during annealing in vacuum in a wide temperature range have been studied. The thin film compositions were obtained by thermal evaporation in vacuum and subsequently subjected to ion-plasma and heat treatment to temperatures of 690 °C. After processing the film, it was investigated by secondary-ion mass spectrometry, transmission electron microscopy, in-situ high-energy electron diffraction. The development of redox processes, which are effectively controlled by the use of additional plasma treatment of films, has been recorded. Ionic low-energy effect stabilizes the structure of the studied systems by inhibiting recrystallization processes.
Krishnan, Subramanian. "Thin film metal-insulator-metal tunnel junctions for millimeter wave detection." [Tampa, Fla] : University of South Florida, 2008. http://purl.fcla.edu/usf/dc/et/SFE0002759.
Повний текст джерелаHuang, Hou Jun, and 黃厚鈞. "A Study on the Properties of Cr Fe Co Ni Cu Alx High-Entropy Alloys Thin Films." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/34480552402453487091.
Повний текст джерела中國文化大學
材料科學與奈米科技研究所
96
Two high-entropy CrFeCoNiCuAl0.5 and CrFeCoNiCuAl1.0 alloy targets were prepared by arc-melting and vacuum induction melting processes. The thin films deposited on the oxidative Si substrates by PVD process, followed by heat treatment at different conditions. The microstructures and compositions of these thin films were analyzed by SEM with EDS, and the resistivity was measured by a four-point probe. Results indicated that the average thickness of the CrFeCoNiCuAl0.5 and CrFeCoNiCuAl1.0 were 0.87 and 0.92μm, respectively. All of these as-deposited thin films had a columnar structure, but these columnar structures would transform to fine granular structures after annealing. The resistivity of these thin films increased with increasing the annealing temperatures and annealing times, but the resistivity of these thin films decreased at initial stage of vacuum annealing because the defects would vanish during high-temperature annealing. Furthermore, the oxidation resistive of CrFeCoNiCuAl0.5 was better than that of CrFeCoNiCuAl1.0 film during high annealing. In addition, no very low resistivity (superconductivity) was observed in present study.
Khan, Kashif Rashid. "Preparation and nitrobenzene reaction kinetics of microcrystalline tungsten bronze thin films with or without transitional metal (Ag, Ti, Cr, Mn, Fe, Co, Ni, and Cu) coatings." 2006. http://digital.library.okstate.edu/etd/umi-okstate-1732.pdf.
Повний текст джерелаPetley, Vijay Uttamrao. "Material and Mechanical Aspects of Thin Film Coatings for Strain Sensing Application on Aero Engines." Thesis, 2017. http://etd.iisc.ac.in/handle/2005/4273.
Повний текст джерелаCHOU, YANG TSUNG, and 楊宗洲. "Effects of Cr Contents on Characteristics of the Ni-Cr Alloy and its Thin Film." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/00890046585602224141.
Повний текст джерела義守大學
材料科學與工程學系
92
Abstract The purpose of this experiment is to investigate the effects of Cr concentration to the Ni-Cr alloy, and to find the influence of sputtering parameters to deposition rate, phase identify, optical properties of thin film by fabricating Ni-Cr thin film with DC sputtering method. The change of sputtering parameters is the different sputtering power(500W, 750W, 1000W), and working pressure(3mtorr, 5mtorr, 8mtorr, 10mtorr). In the results of alloy, the twin structure can be observed from microstructure of scanning electron microscopy in the alloy with low Cr concentration, the alloy with high Cr concentration has some precipitates in the microstructure, but there is not much affected for the distribution of precipitate to properties of thin film. The density in the center of alloy is a little higher than it at the edge by measuring, they have the same phase form X-Ray diffraction, and there is no shifting of diffraction peak. Above these results, we can know that the alloy has a fine uniform and it is good for thin film properties. In the results of thin film, the deposition rate decreased fewer with the increasing of Cr concentration, but the deposition rate of pure Ni film is not at the maximum point because of the long sputtering working distance in pure Ni film. It can be observed that thin film and alloy have the same crystalline of phase from phase identify with the method of Grazing Incident X-Ray Diffraction (GID), and the diffraction peak are shifting to the low angle with the increasing of Cr concentration, it means that the amount of Cr concentration can be solutted more into the Ni phase. In the part of optical properties; the reflectance of short wave length increase, and the reflectance of long wave length decrease with the increasing of Cr concentration because Cr has a good reflectance for short wave length, Ni has a good reflectance for long wave length, moreover the reflectance of long wave length and it of short wave length are getting to close with the increasing of Cr concentration, so the image will not be confused for using the pure Cr to the reflection mirror. For the deposition rate; it increase obviously with the increasing of sputtering power, and has a fine crystalline, there is a little affected of deposition rate to the thin film reflectance. In this experiment, it can be observed that the deposition rate doesn’t has a turning point to the working pressure, and it has a little effect to the crystalline, the deposition rate to the reflectance is decreasing obviously because the range of the sputtering working pressure is not extensive.
Fane, Liang Yuan, and 梁沅汎. "The Optical Property Studies of Ni-Ti and Co-Cr Thin Film." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/85634705396117284868.
Повний текст джерела輔仁大學
物理學系
89
The mainly purpose of this thesis is sputtering nickel, titanium and Ni-Ti thin films on substrate, and then uses x-ray diffractometer, and spectrophotometer Cary-5E to measure its optical properties. Also we use spectrophotometer Cary-5E to measure the optical spectrum of the Co-Cr thin films. At first, we use x-ray diffractometer to measure Ti’s components. Then use spectrophotometer Cary-5E to measure the optical spectrum for the nickel, titanium, Ni-Ti and Co-Cr thin films of different thickness to compare their transmittance, reflectance, and absorptance. We find the optical spectrum shake with increasingly thickness of Ni-Ti, and Ti thin film. The distance with peak appear and again is about 1000Å. And then I make my sample with 1000Å, 2000Å,3000Å,4000Å, and 5000Å.For example by the transmittance in 652nm wavelength of Ni and Ni79Ti21 (1000Å),the transmittance intensity of Ni thin film is 45.4% with smooth line, but the transmittance intensity of Ni79Ti21 thin film is 72.5%,and it is the first peak. Now we know the phenomenon of Ni-Ti thin film is the peak, and the transmittance getting more increase with increasingly Ti. For the base components of Co-Cr, they have the same quality of transmittance. The quality of transmittance is lower in long wavelength,and it decrease gradually by increasingly thickness.
Chuang, Nai-chuan, and 莊乃川. "The Study of the Electrical Properties of the Ni-Cr Thin Film Resistor." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/tjm5d5.
Повний текст джерела國立中山大學
電機工程學系研究所
104
With the demand of electronic devices increasing for information and telecommunication technologies, the passive component with high precision and high reliability properties have become more important in the recent years. The main process of thin film resistor is by sputtering technology to perform high precision of resistance, lower temperature coefficient of resistance (TCR) and high reliability properties. The thin film resistors are widely used in electronic circuit. Among the thin film resistor processes, the laser trimming dominate the precision of resistance and TCR is dominated by composition of sputtering target, sputtering condition and annealing condition. In this study, we focus on the dependence of TCR on different Ni-Cr film thickness and different annealing conditions. The electron mean free path (MFP) and scattering mechanisms of carriers due to surface scattering, grain boundary scattering and surface roughness scattering of Ni-Cr film have been determinate. The experimental results show the electron MFP is about 24.2nm. The TCR performance is increasing with annealing temperature increasing obviously for the thickness of Ni-Cr film is less than electron MFP. The TCR performance is stable as the Ni-Cr film thickness is thicker than the electron MFP, and decreases slightly as the annealing temperature increases. This is because the film is discontinuous with island structure which scattering of electrons at imperfections is dependent on temperature and the TCR increasing. For the thickness of Ni-Cr film is thicker than electron MFP, the film is continuous structure. There is a Cr2O3 oxidation layer on the surface of thicker Ni-Cr film after annealing process. An interdiffusion reaction phenomenon is occurrence. The Cr is diffused out to form Cr2O3 layer and caused higher Ni concentration in inside conductive layer. Thus the TCR decreased with the increase in annealing temperature. Finally, the electrical conduction mechanisms of Ni-Cr thin film resistor are demonstrated by different film thickness through scattering models fitting. The resistivity and temperature coefficient of the resistance of Ni-Cr thin film are measured to investigate the influence of thickness with different annealing temperature. An oxidation and atom inter-diffusion model was proposed to explain the effects of film thickness on the electrical properties of Ni-Cr thin film resistor under different annealing temperature. As the result, we obtained the thin film resistors of low TCR under ±5 ppm/0C at -55 0C and 125 0C.
Lan, Tien-hao, and 藍天豪. "The Study of the Electric Resistance and Microstructure of the Ni-Cr Thin Film." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/73609024176414095128.
Повний текст джерела義守大學
材料科學與工程學系碩士班
93
The objective of this experiment is to make a series study of the electric resistance and microstructure of Ni-Cr thin film. Ni-Cr thin film is made by DC sputtering with different power(500W,750W,1000W) and pressure(3,5,8,10mtorr). The effects of Cr content, sputtering parameters, and temperature on the film characteristic and electric resistance are investigated. Finally, try to find the relationship between the electric resistance and the microstructure. According to the results, some of the relations can be confirmed in the Ni-Cr thin film system. The deposition rate decreased with the increasing Cr content, because the sputtering yield of pure Ni is higher than Cr. The deposition rate increased linearly with increasing power, but there is no obvious variation with increasing pressure. The electric resistance of thin film decreased substantially with increasing film thickness, and it stabilized when the film thickness above 1500Å. The relation between film resistance and film thickness will not be changed by different Cr content, sputtering parameters, and temperature. The ability which film resistivity against to the variable temperature will change at the different film thickness, according to the thickness, it can be divided into three parts. In the same way, the relation of TCR and temperature also can be divided into three parts. By the way of integrating the above-mentioned, and to compare it with TEM, the process of formation in the thin film can be established. For the MC thin film, at the film thickness which is from 50Å to 200Å, it is a short-range-order and it is not as the form as Ni-Cr thin film. When the film thickness is form 200 Å to 2000 Å, it has already been at the second stage, and the film thickness is above 2000 Å, it is getting into the final stage. For the HC thin film, it is as same as MC at 50~200 Å, and the second stage is 200~1000 Å ,after 1000 Å , it will be at the third stage. With the increasing Cr content, TCR will decrease when Cr>44wt%, but it will increase at Cr60wt%. The best TCR will be at the Ni56wt%-Cr44%, 750W, 3mtorr, and film thickness is 900 Å.
Частини книг з теми "Ni-Cr Thin Films"
Cho, Nam Ihn, Se Jong Lee, Yo Seung Song, and Deuk Yong Lee. "Thermal Properties of Cr- and Ni- Silicide Thin Films." In Solid State Phenomena, 189–94. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-31-0.189.
Повний текст джерелаGoldsmith, C. C., and C. Van Buskirk. "Residual Stress Measurements on Cr/Ni Pads Evaporated on Polyimide Thin Films." In Advances in X-Ray Analysis, 203–12. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-2972-9_24.
Повний текст джерелаZhou, Ji Cheng, and Jian Wu Yan. "Microstructure and Electrical Properties of Nano Ni-Cr Thin-Films Fabricated by Magnetron Co-Sputtering Techniques." In Materials Science Forum, 1201–4. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-462-6.1201.
Повний текст джерелаVasylyev, M., M. M. Nishenko, S. I. Sidorenko, and S. M. Voloshko. "Solid-Phase Diffusion Interaction in Multilayer Thin-Film System Cr/Cu/Ni at Pulse Laser Heating." In Defect and Diffusion Forum, 31–40. Stafa: Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/3-908451-54-x.31.
Повний текст джерелаGheidari, Mohammadi, and E. Asl Soleimani. "A study of Al/Ti, Al/Ni/Cr AND Al/Mo OHMIC Contacts to Indium Tin Oxide (ITO) for Application in Thin Film Solar Cell." In Proceedings of ISES World Congress 2007 (Vol. I – Vol. V), 1123–25. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-75997-3_221.
Повний текст джерелаJang, HeeJin, and HyukSang Kwon. "Photoelectrochemical analysis of the passive film formed on Fe-Cr-Ni alloys in pH 8.5 buffer solution." In Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers, 279–84. Elsevier, 2006. http://dx.doi.org/10.1016/b978-044452224-5/50045-7.
Повний текст джерелаТези доповідей конференцій з теми "Ni-Cr Thin Films"
Shiroishi, Y., Y. Matsuda, S. Hishiyama, H. Suzuki, T. Ohno, Y. Yahisa, N. Tsumita, M. Ohura, and M. Hayashi. "Read and write characteristics of Co-Ni-Zr-M/Cr thin films for longitudinal recording." In International Magnetics Conference. IEEE, 1989. http://dx.doi.org/10.1109/intmag.1989.689986.
Повний текст джерелаCho, Joon Hyong, and Michael Cullinan. "Graphene Growth on and Transfer From Platinum Thin Films." In ASME 2017 12th International Manufacturing Science and Engineering Conference collocated with the JSME/ASME 2017 6th International Conference on Materials and Processing. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/msec2017-3059.
Повний текст джерелаKomatsu, Takeru, Hiroyasu Ohtake, and Yasuo Koizumi. "Study on Condensation Heat Transfer of Micro Structured Surfaces (Effect on Condensation Heat Transfer of Metal-Spattering Surfaces)." In ASME/JSME 2011 8th Thermal Engineering Joint Conference. ASMEDC, 2011. http://dx.doi.org/10.1115/ajtec2011-44532.
Повний текст джерелаHuang, Annie T., Chung-Kuang Chou, and Chih Chen. "Self-Aligned Hermetic Packaging Using Eutectic SnPb Solder and Cr/Ni/Cu Metallization Layer." In ASME 2004 International Mechanical Engineering Congress and Exposition. ASMEDC, 2004. http://dx.doi.org/10.1115/imece2004-61026.
Повний текст джерелаHe, Qicong, Dongping Zhang, Ying Huang, Yu Yang, Huan Guan, Jingcheng Jin, and Ping Fan. "Employing Ni-Cr co-doping to prepare low phase transition temperature VO2 film." In Tenth International Conference on Thin Film Physics and Applications (TFPA 2019), edited by Junhao Chu and Jianda Shao. SPIE, 2019. http://dx.doi.org/10.1117/12.2541404.
Повний текст джерелаLai, Lifei, Rong Sun, Xianzhu Fu, and Ruxu Du. "Influence of segregation and diffusion behavior on electrical properties of embedded Ni- Cr thin film resistor." In 2012 13th International Conference on Electronic Packaging Technology & High Density Packaging (ICEPT-HDP). IEEE, 2012. http://dx.doi.org/10.1109/icept-hdp.2012.6474622.
Повний текст джерелаSonoya, K., H. Sunahara, M. Nakamura, and K. Ishida. "Effect of Base Metal on the Thermal Cycle Properties of Heat-Resistant Plasma Sprayed Coatings." In ITSC 2012, edited by R. S. Lima, A. Agarwal, M. M. Hyland, Y. C. Lau, C. J. Li, A. McDonald, and F. L. Toma. ASM International, 2012. http://dx.doi.org/10.31399/asm.cp.itsc2012p0485.
Повний текст джерелаTouminen, J., M. Honkanen, M. Uusitalo, S. Ahmaniemi, P. Vuoristo, and T. Mäntylä. "Hot Corrosion Resistant Laser Coatings in Diesel Engine." In ITSC2007, edited by B. R. Marple, M. M. Hyland, Y. C. Lau, C. J. Li, R. S. Lima, and G. Montavon. ASM International, 2007. http://dx.doi.org/10.31399/asm.cp.itsc2007p1099.
Повний текст джерелаHoule, F. A., J. Ure, T. Clemes, J. Bond, P. Sharma, M. Coughlan, and K. A. Singmaster. "Influence of Feature Size Scaling on Chemical Vapor Deposition Chemistry." In Chemistry and Physics of Small-Scale Structures. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/cps.1997.csud.3.
Повний текст джерелаChiang, Chen-Su, Wen-Hsi Lee, and Franco Jap. "Investigation into microstructural and electrical characteristics of Ni-Cr-Si thin-film resistors deposited in Al2O3 substrate using DC and RF magnetron sputtering." In 2014 International Symposium on Next-Generation Electronics (ISNE). IEEE, 2014. http://dx.doi.org/10.1109/isne.2014.6839380.
Повний текст джерела