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Добірка наукової літератури з теми "Neuromorphic devices"

Автор: Grafiati

Опубліковано: 14 грудня 2024

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Статті в журналах з теми "Neuromorphic devices"

Ielmini, Daniele, and Stefano Ambrogio. "Emerging neuromorphic devices." Nanotechnology 31, no. 9 (2019): 092001. http://dx.doi.org/10.1088/1361-6528/ab554b.

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Guo, Zhonghao. "Synaptic device-based neuromorphic computing in artificial intelligence." Applied and Computational Engineering 65, no. 1 (2024): 253–59. http://dx.doi.org/10.54254/2755-2721/65/20240511.

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Анотація:

The application of synaptic device-based neuromorphic computing in artificial intelligence is an emerging research field aimed at simulating the structure and function of the human brain and realizing high-efficiency, low-power, and adaptive intelligent computing. This paper reviews the principles, growth and challenges of neuromorphic devices based on synapses computing and its applications and perspectives in artificial intelligence fields like an image processing as well as natural language processing. The paper first introduces the basic concepts, properties and classification of synaptic devices, as well as the basic framework and algorithms of neuromorphic computing. Then, the paper analyzes the advantages and difficulties of neuromorphic computing based on synaptic devices, including the preparation, testing, modelling and integration of the devices, as well as the systems architecture, programming and optimization. Then, this paper gives examples of the applications and effects of synaptic device-based neuromorphic computing in artificial intelligence fields such as image processing and natural language processing, including image denoising, image segmentation, image recognition, text classification, text summarization, and text generation. Finally, this paper summarizes the current research status and future synaptic device-based neuromorphic computing trends. It puts forward some research directions and suggestions to promote the development and innovation in this field.

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Park, Jisoo, Jihyun Shin, and Hocheon Yoo. "Heterostructure-Based Optoelectronic Neuromorphic Devices." Electronics 13, no. 6 (2024): 1076. http://dx.doi.org/10.3390/electronics13061076.

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The concept of neuromorphic devices, aiming to process large amounts of information in parallel, at low power, high speed, and high efficiency, is to mimic the functions of human brain by emulating biological neural behavior. Optoelectronic neuromorphic devices are particularly suitable for neuromorphic applications with their ability to generate various pulses based on wavelength and to control synaptic stimulation. Each wavelength (ultraviolet, visible, and infrared) has specific advantages and optimal applications. Here, the heterostructure-based optoelectronic neuromorphic devices are explored across the full wavelength range (ultraviolet to infrared) by categorizing them on the basis of irradiated wavelength and structure (two-terminal and three-terminal) with respect to emerging optoelectrical materials. The relationship between neuromorphic applications, light wavelength, and mechanism is revisited. Finally, the potential and challenging aspects of next-generation optoelectronic neuromorphic devices are presented, which can assist in the design of suitable materials and structures for neuromorphic-based applications.

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Huang, Wen, Huixing Zhang, Zhengjian Lin, Pengjie Hang, and Xing’ao Li. "Transistor-Based Synaptic Devices for Neuromorphic Computing." Crystals 14, no. 1 (2024): 69. http://dx.doi.org/10.3390/cryst14010069.

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Анотація:

Currently, neuromorphic computing is regarded as the most efficient way to solve the von Neumann bottleneck. Transistor-based devices have been considered suitable for emulating synaptic functions in neuromorphic computing due to their synergistic control capabilities on synaptic weight changes. Various low-dimensional inorganic materials such as silicon nanomembranes, carbon nanotubes, nanoscale metal oxides, and two-dimensional materials are employed to fabricate transistor-based synaptic devices. Although these transistor-based synaptic devices have progressed in terms of mimicking synaptic functions, their application in neuromorphic computing is still in its early stage. In this review, transistor-based synaptic devices are analyzed by categorizing them into different working mechanisms, and the device fabrication processes and synaptic properties are discussed. Future efforts that could be beneficial to the development of transistor-based synaptic devices in neuromorphic computing are proposed.

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Lim, Jung Wook, Su Jae Heo, Min A. Park, and Jieun Kim. "Synaptic Transistors Exhibiting Gate-Pulse-Driven, Metal-Semiconductor Transition of Conduction." Materials 14, no. 24 (2021): 7508. http://dx.doi.org/10.3390/ma14247508.

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Анотація:

Neuromorphic devices have been investigated extensively for technological breakthroughs that could eventually replace conventional semiconductor devices. In contrast to other neuromorphic devices, the device proposed in this paper utilizes deep trap interfaces between the channel layer and the charge-inducing dielectrics (CID). The device was fabricated using in-situ atomic layer deposition (ALD) for the sequential deposition of the CID and oxide semiconductors. Upon the application of a gate bias pulse, an abrupt change in conducting states was observed in the device from the semiconductor to the metal. Additionally, numerous intermediate states could be implemented based on the number of cycles. Furthermore, each state persisted for 10,000 s after the gate pulses were removed, demonstrating excellent synaptic properties of the long-term memory. Moreover, the variation of drain current with cycle number demonstrates the device’s excellent linearity and symmetry for excitatory and inhibitory behaviors when prepared on a glass substrate intended for transparent devices. The results, therefore, suggest that such unique synaptic devices with extremely stable and superior properties could replace conventional semiconducting devices in the future.

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Diao, Yu, Yaoxuan Zhang, Yanran Li, and Jie Jiang. "Metal-Oxide Heterojunction: From Material Process to Neuromorphic Applications." Sensors 23, no. 24 (2023): 9779. http://dx.doi.org/10.3390/s23249779.

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Анотація:

As technologies like the Internet, artificial intelligence, and big data evolve at a rapid pace, computer architecture is transitioning from compute-intensive to memory-intensive. However, traditional von Neumann architectures encounter bottlenecks in addressing modern computational challenges. The emulation of the behaviors of a synapse at the device level by ionic/electronic devices has shown promising potential in future neural-inspired and compact artificial intelligence systems. To address these issues, this review thoroughly investigates the recent progress in metal-oxide heterostructures for neuromorphic applications. These heterostructures not only offer low power consumption and high stability but also possess optimized electrical characteristics via interface engineering. The paper first outlines various synthesis methods for metal oxides and then summarizes the neuromorphic devices using these materials and their heterostructures. More importantly, we review the emerging multifunctional applications, including neuromorphic vision, touch, and pain systems. Finally, we summarize the future prospects of neuromorphic devices with metal-oxide heterostructures and list the current challenges while offering potential solutions. This review provides insights into the design and construction of metal-oxide devices and their applications for neuromorphic systems.

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Feng, Chenyin, Wenwei Wu, Huidi Liu, et al. "Emerging Opportunities for 2D Materials in Neuromorphic Computing." Nanomaterials 13, no. 19 (2023): 2720. http://dx.doi.org/10.3390/nano13192720.

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Анотація:

Recently, two-dimensional (2D) materials and their heterostructures have been recognized as the foundation for future brain-like neuromorphic computing devices. Two-dimensional materials possess unique characteristics such as near-atomic thickness, dangling-bond-free surfaces, and excellent mechanical properties. These features, which traditional electronic materials cannot achieve, hold great promise for high-performance neuromorphic computing devices with the advantages of high energy efficiency and integration density. This article provides a comprehensive overview of various 2D materials, including graphene, transition metal dichalcogenides (TMDs), hexagonal boron nitride (h-BN), and black phosphorus (BP), for neuromorphic computing applications. The potential of these materials in neuromorphic computing is discussed from the perspectives of material properties, growth methods, and device operation principles.

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Kim, Dongshin, Ik-Jyae Kim, and Jang-Sik Lee. "Memory Devices for Flexible and Neuromorphic Device Applications." Advanced Intelligent Systems 3, no. 5 (2021): 2000206. http://dx.doi.org/10.1002/aisy.202000206.

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Huang, Yi, Fatemeh Kiani, Fan Ye, and Qiangfei Xia. "From memristive devices to neuromorphic systems." Applied Physics Letters 122, no. 11 (2023): 110501. http://dx.doi.org/10.1063/5.0133044.

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Анотація:

Progress in hardware and algorithms for artificial intelligence (AI) has ushered in large machine learning models and various applications impacting our everyday lives. However, today's AI, mainly artificial neural networks, still cannot compete with human brains because of two major issues: the high energy consumption of the hardware running AI models and the lack of ability to generalize knowledge and self-adapt to changes. Neuromorphic systems built upon emerging devices, for instance, memristors, provide a promising path to address these issues. Although innovative memristor devices and circuit designs have been proposed for neuromorphic computing and applied to different proof-of-concept applications, there is still a long way to go to build large-scale low-power memristor-based neuromorphic systems that can bridge the gap between AI and biological brains. This Perspective summarizes the progress and challenges from memristor devices to neuromorphic systems and proposes possible directions for neuromorphic system implementation based on memristive devices.

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Machado, Pau, Salvador Manich, Álvaro Gómez-Pau, et al. "Programming Techniques of Resistive Random-Access Memory Devices for Neuromorphic Computing." Electronics 12, no. 23 (2023): 4803. http://dx.doi.org/10.3390/electronics12234803.

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Анотація:

Neuromorphic computing offers a promising solution to overcome the von Neumann bottleneck, where the separation between the memory and the processor poses increasing limitations of latency and power consumption. For this purpose, a device with analog switching for weight update is necessary to implement neuromorphic applications. In the diversity of emerging devices postulated as synaptic elements in neural networks, RRAM emerges as a standout candidate for its ability to tune its resistance. The learning accuracy of a neural network is directly related to the linearity and symmetry of the weight update behavior of the synaptic element. However, it is challenging to obtain such a linear and symmetrical behavior with RRAM devices. Thus, extensive research is currently devoted at different levels, from material to device engineering, to improve the linearity and symmetry of the conductance update of RRAM devices. In this work, the experimental results based on different programming pulse conditions of RRAM devices are presented, considering both voltage and current pulses. Their suitability for application as analog RRAM-based synaptic devices for neuromorphic computing is analyzed by computing an asymmetric nonlinearity factor.

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