Статті в журналах з теми "Negative electron affinity (NEA)"
Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями
Ознайомтеся з топ-50 статей у журналах для дослідження на тему "Negative electron affinity (NEA)".
Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.
Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.
Переглядайте статті в журналах для різних дисциплін та оформлюйте правильно вашу бібліографію.
Malta, D. P., J. B. Posthill, T. P. Humphreys, and R. J. Markunas. "Interpretation of secondary electron contrast from negative electron affinity diamond surfaces." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 120–21. http://dx.doi.org/10.1017/s0424820100136970.
Повний текст джерелаXIE, AI-GEN, YANG YU, YA-YI CHEN, YU-QING XIA, and HAO-YU LIU. "THEORETICAL RESEARCH OF SECONDARY ELECTRON EMISSION FROM NEGATIVE ELECTRON AFFINITY SEMICONDUCTORS." Surface Review and Letters 26, no. 04 (May 2019): 1850181. http://dx.doi.org/10.1142/s0218625x18501810.
Повний текст джерелаKashima, M., S. Ishiyama, D. Sato, A. Koizumi, H. Iijima, T. Nishitani, Y. Honda, H. Amano, and T. Meguro. "Adsorption structure deteriorating negative electron affinity under the H2O environment." Applied Physics Letters 121, no. 18 (October 31, 2022): 181601. http://dx.doi.org/10.1063/5.0125344.
Повний текст джерелаYasuda, Hidehiro, Tomohiro Nishitani, Shuhei Ichikawa, Shuhei Hatanaka, Yoshio Honda, and Hiroshi Amano. "Development of Pulsed TEM Equipped with Nitride Semiconductor Photocathode for High-Speed Observation and Material Nanofabrication." Quantum Beam Science 5, no. 1 (February 1, 2021): 5. http://dx.doi.org/10.3390/qubs5010005.
Повний текст джерелаFeigl, C. A., B. Motevalli, A. J. Parker, B. Sun, and A. S. Barnard. "Classifying and predicting the electron affinity of diamond nanoparticles using machine learning." Nanoscale Horizons 4, no. 4 (2019): 983–90. http://dx.doi.org/10.1039/c9nh00060g.
Повний текст джерелаKoizumi, Atsushi, Daiki Sato, Haruka Shikano, Hokuto Iijima, and Tomohiro Nishitani. "Dependence of electron emission current density on excitation power density from Cs/O-activated negative electron affinity InGaN photocathode." Journal of Vacuum Science & Technology B 40, no. 6 (December 2022): 062202. http://dx.doi.org/10.1116/6.0002124.
Повний текст джерелаINAGAKI, Yuta, Kazuya HAYASE, Ryosuke CHIBA, Hokuto IIJIMA, and Takashi MEGURO. "Contribution of Treatment Temperature on Quantum Efficiency of Negative Electron Affinity (NEA)-GaAs." IEICE Transactions on Electronics E99.C, no. 3 (2016): 371–75. http://dx.doi.org/10.1587/transele.e99.c.371.
Повний текст джерелаCai, Zhi Peng, Wen Zheng Yang, Wei Dong Tang, and Xun Hou. "Theoretical Energy Distributions of Electrons from a Large Exponential-Doping GaAs Photocathode." Advanced Materials Research 415-417 (December 2011): 1302–5. http://dx.doi.org/10.4028/www.scientific.net/amr.415-417.1302.
Повний текст джерелаYater, J. E. "Secondary electron emission and vacuum electronics." Journal of Applied Physics 133, no. 5 (February 7, 2023): 050901. http://dx.doi.org/10.1063/5.0130972.
Повний текст джерелаBae, Jai Kwan, Matthew Andorf, Adam Bartnik, Alice Galdi, Luca Cultrera, Jared Maxson, and Ivan Bazarov. "Operation of Cs–Sb–O activated GaAs in a high voltage DC electron gun at high average current." AIP Advances 12, no. 9 (September 1, 2022): 095017. http://dx.doi.org/10.1063/5.0100794.
Повний текст джерелаGuo, Jing, Ming Zhu Yang, and Mei Shan Wang. "Theoretical Study on Absorption Properties of InxGa1-xAs with Different in Component." Applied Mechanics and Materials 423-426 (September 2013): 439–42. http://dx.doi.org/10.4028/www.scientific.net/amm.423-426.439.
Повний текст джерелаTereshchenko, Oleg E., Vladimir A. Golyashov, Vadim S. Rusetsky, Andrey V. Mironov, Alexander Yu Demin, and Vladimir V. Aksenov. "A new imaging concept in spin polarimetry based on the spin-filter effect." Journal of Synchrotron Radiation 28, no. 3 (March 30, 2021): 864–75. http://dx.doi.org/10.1107/s1600577521002307.
Повний текст джерелаTereshchenko, Oleg E., Vladimir A. Golyashov, Vadim S. Rusetsky, Danil A. Kustov, Andrey V. Mironov, and Alexander Yu Demin. "Vacuum Spin LED: First Step towards Vacuum Semiconductor Spintronics." Nanomaterials 13, no. 3 (January 19, 2023): 422. http://dx.doi.org/10.3390/nano13030422.
Повний текст джерелаXia, Sihao, Lei Liu, Honggang Wang, Meishan Wang, and Yike Kong. "Theoretical study for heterojunction surface of NEA GaN photocathode dispensed with Cs activation." Modern Physics Letters B 30, no. 26 (September 30, 2016): 1650339. http://dx.doi.org/10.1142/s0217984916503395.
Повний текст джерелаWang, Huan, Jiajun Linghu, Pengfei Zou, Xuezhi Wang, Hao Shen, and Bingru Hai. "Theoretical Study on the Photoemission Performance of a Transmission Mode In0.15Ga0.85As Photocathode in the Near-Infrared Region." Molecules 28, no. 13 (July 7, 2023): 5262. http://dx.doi.org/10.3390/molecules28135262.
Повний текст джерелаSchaber, Jana, Rong Xiang, Jochen Teichert, André Arnold, Petr Murcek, Paul Zwartek, Anton Ryzhov, et al. "Influence of Surface Cleaning on Quantum Efficiency, Lifetime and Surface Morphology of p-GaN:Cs Photocathodes." Micromachines 13, no. 6 (May 29, 2022): 849. http://dx.doi.org/10.3390/mi13060849.
Повний текст джерелаSanford, Colin A. "Electron optical characteristics of negative electron affinity cathodes." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 6, no. 6 (November 1988): 2005. http://dx.doi.org/10.1116/1.584118.
Повний текст джерелаMcKenna, Keith P., and Alexander L. Shluger. "Electron-trapping polycrystalline materials with negative electron affinity." Nature Materials 7, no. 11 (October 12, 2008): 859–62. http://dx.doi.org/10.1038/nmat2289.
Повний текст джерелаYamada, Takatoshi, Kap-soon Chang, Ken Okano, and Akio Hiraki. "Electron emission from diamond having negative electron affinity." Electronics and Communications in Japan (Part II: Electronics) 81, no. 11 (November 1998): 54–64. http://dx.doi.org/10.1002/(sici)1520-6432(199811)81:11<54::aid-ecjb7>3.0.co;2-2.
Повний текст джерелаYamada, Takatoshi, Kap-soon Chang, Ken Okano, and Akio Hiraki. "Electron emission from diamond having negative electron affinity." Electronics and Communications in Japan (Part II: Electronics) 82, no. 8 (August 1999): 42–52. http://dx.doi.org/10.1002/(sici)1520-6432(199908)82:8<42::aid-ecjb6>3.0.co;2-k.
Повний текст джерелаBakin, V. V., A. A. Pakhnevich, A. G. Zhuravlev, A. N. Shornikov, I. O. Akhundov, O. E. Tereshechenko, V. L. Alperovich, H. E. Scheibler, and A. S. Terekhov. "Semiconductor surfaces with negative electron affinity." e-Journal of Surface Science and Nanotechnology 5 (2007): 80–88. http://dx.doi.org/10.1380/ejssnt.2007.80.
Повний текст джерелаGuo, Tailiang, and Huairong Gao. "Negative electron affinity multi-alkali photocathodes." Applied Surface Science 70-71 (June 1993): 355–58. http://dx.doi.org/10.1016/0169-4332(93)90457-m.
Повний текст джерелаVergara, G., A. Herrera-Gómez, and W. E. Spicer. "Calculated electron energy distribution of negative electron affinity cathodes." Surface Science 436, no. 1-3 (August 1999): 83–90. http://dx.doi.org/10.1016/s0039-6028(99)00612-3.
Повний текст джерелаChang, Benkang. "Gradient-doping negative electron affinity GaAs photocathodes." Optical Engineering 45, no. 5 (May 1, 2006): 054001. http://dx.doi.org/10.1117/1.2205171.
Повний текст джерелаZou, Jijun, Xiaowan Ge, Yijun Zhang, Wenjuan Deng, Zhifu Zhu, Weilu Wang, Xincun Peng, Zhaoping Chen, and Benkang Chang. "Negative electron affinity GaAs wire-array photocathodes." Optics Express 24, no. 5 (February 24, 2016): 4632. http://dx.doi.org/10.1364/oe.24.004632.
Повний текст джерелаKrainsky, I. L., and V. M. Asnin. "Negative electron affinity mechanism for diamond surfaces." Applied Physics Letters 72, no. 20 (May 18, 1998): 2574–76. http://dx.doi.org/10.1063/1.121422.
Повний текст джерелаWilliams, M. D., M. D. Feuer, S. C. Shunk, N. J. Sauer, and T. Y. Chang. "Negative electron affinity based vacuum collector transistor." Journal of Applied Physics 71, no. 6 (March 15, 1992): 3042–44. http://dx.doi.org/10.1063/1.350990.
Повний текст джерелаLoh, Kian Ping, Isao Sakaguchi, Mikka Nishitani-Gamo, Takashi Taniguchi, and Toshihiro Ando. "Negative electron affinity of cubic boron nitride." Diamond and Related Materials 8, no. 2-5 (March 1999): 781–84. http://dx.doi.org/10.1016/s0925-9635(98)00293-3.
Повний текст джерелаTakeuchi, D., S. G. Ri, H. Kato, C. E. Nebel, and S. Yamasaki. "Negative electron affinity on hydrogen terminated diamond." physica status solidi (a) 202, no. 11 (September 2005): 2098–103. http://dx.doi.org/10.1002/pssa.200561927.
Повний текст джерелаGhani, Muhammad Usman, M. Imran Jamil, Afaq Ahmad, and Saad Tariq. "Electron affinity measurement of hydrogen negative ion." Pakistan Journal of Emerging Science and Technologies (PJEST) 4, no. 2 (May 15, 2023): 1–8. http://dx.doi.org/10.58619/pjest.v4i2.101.
Повний текст джерелаSantos, Edval J. P. "Integration of microstructures onto negative electron affinity cathodes: Fabrication and operation of an addressable negative electron affinity cathode." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 11, no. 6 (November 1993): 2362. http://dx.doi.org/10.1116/1.586987.
Повний текст джерелаSchneider, J. E. "Patterned negative electron affinity photocathodes for maskless electron beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 16, no. 6 (November 1998): 3192. http://dx.doi.org/10.1116/1.590349.
Повний текст джерелаXie, Ai-Gen, Zheng Pan, Hong-Jie Dong, and Chen-Nan Song. "Secondary electron emission from insulators and negative electron affinity semiconductors." Results in Physics 20 (January 2021): 103745. http://dx.doi.org/10.1016/j.rinp.2020.103745.
Повний текст джерелаGao, Huairong, and Qing-Bin Lu. "Investigation of electron emission stability of negative electron affinity cathodes." Vacuum 41, no. 7-9 (January 1990): 1753–55. http://dx.doi.org/10.1016/0042-207x(90)94076-3.
Повний текст джерелаLi, Jieru, Daniel Niesner, and Thomas Fauster. "Negative electron affinity of adamantane on Cu(111)." Journal of Physics: Condensed Matter 33, no. 13 (January 25, 2021): 135001. http://dx.doi.org/10.1088/1361-648x/abd99a.
Повний текст джерелаQiao Jian-Liang, Tian Si, Chang Ben-Kang, Du Xiao-Qing, and Gao Pin. "Activation mechanism of negative electron affinity GaN photocathode." Acta Physica Sinica 58, no. 8 (2009): 5847. http://dx.doi.org/10.7498/aps.58.5847.
Повний текст джерелаDu Xiaoqing, 杜晓晴, 常本康 Chang Benkang, 钱芸生 Qian Yunsheng, 富容国 Fu Rongguo, 高频 Gao Pin, and 乔建良 Qiao Jianliang. "Activation Technique of GaN Negative Electron Affinity Photocathode." Chinese Journal of Lasers 37, no. 2 (2010): 385–88. http://dx.doi.org/10.3788/cjl20103702.0385.
Повний текст джерелаGuo Xiangyang, 郭向阳, 王晓晖 Wang Xiaohui, 常本康 Chang Benkang, 张益军 Zhang Yijun, and 乔建良 Qiao Jianliang. "Preparation Technique of Negative-Electron-Affinity GaN Photocathode." Acta Optica Sinica 31, no. 2 (2011): 0219003. http://dx.doi.org/10.3788/aos201131.0219003.
Повний текст джерелаSedlacek, J. A., E. Kim, S. T. Rittenhouse, P. F. Weck, H. R. Sadeghpour, and J. P. Shaffer. "Rb adsorbate-induced negative electron affinity on quartz." Journal of Physics: Conference Series 875 (July 2017): 112014. http://dx.doi.org/10.1088/1742-6596/875/12/112014.
Повний текст джерелаGao, Xingyu, Lei Liu, Dongchen Qi, Shi Chen, A. T. S. Wee, Ti Ouyang, Kian Ping Loh, Xiaojiang Yu, and Herbert O. Moser. "Water-Induced Negative Electron Affinity on Diamond (100)." Journal of Physical Chemistry C 112, no. 7 (February 2008): 2487–91. http://dx.doi.org/10.1021/jp0726337.
Повний текст джерелаLiu, Zhi, Yun Sun, P. Pianetta, and R. F. W. Pease. "Narrow cone emission from negative electron affinity photocathodes." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 23, no. 6 (2005): 2758. http://dx.doi.org/10.1116/1.2101726.
Повний текст джерелаSanford, Colin A. "Electron emission properties of laser pulsed GaAs negative electron affinity photocathodes." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 8, no. 6 (November 1990): 1853. http://dx.doi.org/10.1116/1.585172.
Повний текст джерелаBandis, C., and B. B. Pate. "Electron Emission Due to Exciton Breakup from Negative Electron Affinity Diamond." Physical Review Letters 74, no. 5 (January 30, 1995): 777–80. http://dx.doi.org/10.1103/physrevlett.74.777.
Повний текст джерелаOhshima, Takashi, and Makoto Kudo. "Electron Beam Brightness from Negative-Electron-Affinity Photocathodes for Scanning Electron Microscopy Application." Japanese Journal of Applied Physics 43, no. 12 (December 9, 2004): 8335–40. http://dx.doi.org/10.1143/jjap.43.8335.
Повний текст джерелаQIAO Jian-liang, 乔建良, 徐源 XU Yuan, 高有堂 GAO You-tang, 牛军 NIU Jun, and 常本康 CHANG Ben-kang. "Cs Adsorption Mechanism for Negative Electron Affinity GaN Photocathode." ACTA PHOTONICA SINICA 45, no. 4 (2016): 425001. http://dx.doi.org/10.3788/gzxb20164504.0425001.
Повний текст джерелаWu, C. I., and A. Kahn. "Negative electron affinity at the Cs/AlN(0001) surface." Applied Physics Letters 74, no. 10 (March 8, 1999): 1433–35. http://dx.doi.org/10.1063/1.123573.
Повний текст джерелаEyckeler, M. "Negative electron affinity of cesiated p-GaN(0001) surfaces." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 16, no. 4 (July 1998): 2224. http://dx.doi.org/10.1116/1.590152.
Повний текст джерелаPowers, M. J., M. C. Benjamin, L. M. Porter, R. J. Nemanich, R. F. Davis, J. J. Cuomo, G. L. Doll, and Stephen J. Harris. "Observation of a negative electron affinity for boron nitride." Applied Physics Letters 67, no. 26 (December 25, 1995): 3912–14. http://dx.doi.org/10.1063/1.115315.
Повний текст джерелаvan der Weide, J., Z. Zhang, P. K. Baumann, M. G. Wensell, J. Bernholc, and R. J. Nemanich. "Negative-electron-affinity effects on the diamond (100) surface." Physical Review B 50, no. 8 (August 15, 1994): 5803–6. http://dx.doi.org/10.1103/physrevb.50.5803.
Повний текст джерелаGuo-xin, Chen, P. P. Ong, and Lin Ting. "DFT approach for electron affinity of negative atomic ions." Chemical Physics Letters 290, no. 1-3 (June 1998): 211–15. http://dx.doi.org/10.1016/s0009-2614(98)00552-1.
Повний текст джерела