Статті в журналах з теми "NANOWIRE RECONFIGURABLE"
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Heinzig, André, Stefan Slesazeck, Franz Kreupl, Thomas Mikolajick, and Walter M. Weber. "Reconfigurable Silicon Nanowire Transistors." Nano Letters 12, no. 1 (December 2011): 119–24. http://dx.doi.org/10.1021/nl203094h.
Повний текст джерелаWeber, W. M., A. Heinzig, J. Trommer, D. Martin, M. Grube, and T. Mikolajick. "Reconfigurable nanowire electronics – A review." Solid-State Electronics 102 (December 2014): 12–24. http://dx.doi.org/10.1016/j.sse.2014.06.010.
Повний текст джерелаBaldauf, Tim, Andre Heinzig, Thomas Mikolajick, and Walter M. Weber. "Vertically Integrated Reconfigurable Nanowire Arrays." IEEE Electron Device Letters 39, no. 8 (August 2018): 1242–45. http://dx.doi.org/10.1109/led.2018.2847902.
Повний текст джерелаPark, So Jeong, Dae-Young Jeon, Sabrina Piontek, Matthias Grube, Johannes Ocker, Violetta Sessi, André Heinzig, et al. "Reconfigurable Si Nanowire Nonvolatile Transistors." Advanced Electronic Materials 4, no. 1 (December 11, 2017): 1700399. http://dx.doi.org/10.1002/aelm.201700399.
Повний текст джерелаTrommer, Jens, André Heinzig, Anett Heinrich, Paul Jordan, Matthias Grube, Stefan Slesazeck, Thomas Mikolajick, and Walter M. Weber. "Material Prospects of Reconfigurable Transistor (RFETs) – From Silicon to Germanium Nanowires." MRS Proceedings 1659 (2014): 225–30. http://dx.doi.org/10.1557/opl.2014.110.
Повний текст джерелаHashim, Uda, Tijjani Adam, M. N. Afnan Uda, and M. N. A. Uda. "Determination of Silicon Electrical Properties Using First Principles Approach." Journal of Physics: Conference Series 2129, no. 1 (December 1, 2021): 012056. http://dx.doi.org/10.1088/1742-6596/2129/1/012056.
Повний текст джерелаLi, Xianglong, Xiaoqiao Yang, Zhe Zhang, Teng Wang, Yabin Sun, Ziyu Liu, Xiaojin Li, Yanling Shi, and Jun Xu. "Impact of Process Fluctuations on Reconfigurable Silicon Nanowire Transistor." IEEE Transactions on Electron Devices 68, no. 2 (February 2021): 885–91. http://dx.doi.org/10.1109/ted.2020.3045689.
Повний текст джерелаWeber, Walter M., Andre Heinzig, Jens Trommer, Matthias Grube, Franz Kreupl, and Thomas Mikolajick. "Reconfigurable Nanowire Electronics-Enabling a Single CMOS Circuit Technology." IEEE Transactions on Nanotechnology 13, no. 6 (November 2014): 1020–28. http://dx.doi.org/10.1109/tnano.2014.2362112.
Повний текст джерелаBetz, A. C., M. L. V. Tagliaferri, M. Vinet, M. Broström, M. Sanquer, A. J. Ferguson, and M. F. Gonzalez-Zalba. "Reconfigurable quadruple quantum dots in a silicon nanowire transistor." Applied Physics Letters 108, no. 20 (May 16, 2016): 203108. http://dx.doi.org/10.1063/1.4950976.
Повний текст джерелаTrommer, Jens, Andre Heinzig, Stefan Slesazeck, Thomas Mikolajick, and Walter Michael Weber. "Elementary Aspects for Circuit Implementation of Reconfigurable Nanowire Transistors." IEEE Electron Device Letters 35, no. 1 (January 2014): 141–43. http://dx.doi.org/10.1109/led.2013.2290555.
Повний текст джерелаBaldauf, Tim, Andre Heinzig, Jens Trommer, Thomas Mikolajick, and Walter Michael Weber. "Stress-Dependent Performance Optimization of Reconfigurable Silicon Nanowire Transistors." IEEE Electron Device Letters 36, no. 10 (October 2015): 991–93. http://dx.doi.org/10.1109/led.2015.2471103.
Повний текст джерелаBoehm, Sarah J., Lei Kang, Douglas H. Werner, and Christine D. Keating. "Field-Switchable Broadband Polarizer Based on Reconfigurable Nanowire Assemblies." Advanced Functional Materials 27, no. 5 (December 19, 2016): 1604703. http://dx.doi.org/10.1002/adfm.201604703.
Повний текст джерелаSun, Bin, Benjamin Richstein, Patrick Liebisch, Thorben Frahm, Stefan Scholz, Jens Trommer, Thomas Mikolajick, and Joachim Knoch. "On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors." IEEE Transactions on Electron Devices 68, no. 7 (July 2021): 3684–89. http://dx.doi.org/10.1109/ted.2021.3081527.
Повний текст джерелаWessely, Frank, Tillmann Krauss, and Udo Schwalke. "Reconfigurable CMOS with undoped silicon nanowire midgap Schottky-barrier FETs." Microelectronics Journal 44, no. 12 (December 2013): 1072–76. http://dx.doi.org/10.1016/j.mejo.2012.08.004.
Повний текст джерелаSaha, Priyanka, Dinesh Kumar Dash, and Subir Kumar Sarkar. "Nanowire reconfigurable FET as biosensor: Based on dielectric modulation approach." Solid-State Electronics 161 (November 2019): 107637. http://dx.doi.org/10.1016/j.sse.2019.107637.
Повний текст джерелаBanerjee, Sayanti, Markus Löffler, Uwe Muehle, Katarzyna Berent, André Heinzig, Jens Trommer, Walter Weber, and Ehrenfried Zschech. "TEM Study of Schottky Junctions in Reconfigurable Silicon Nanowire Devices." Advanced Engineering Materials 18, no. 2 (March 25, 2015): 180–84. http://dx.doi.org/10.1002/adem.201400577.
Повний текст джерелаSimon, Maik, Andre Heinzig, Jens Trommer, Tim Baldauf, Thomas Mikolajick, and Walter M. Weber. "Top-Down Technology for Reconfigurable Nanowire FETs With Symmetric On-Currents." IEEE Transactions on Nanotechnology 16, no. 5 (September 2017): 812–19. http://dx.doi.org/10.1109/tnano.2017.2694969.
Повний текст джерелаWu, Jun, and Minsu Choi. "Latency/area analysis and optimization of asynchronous nanowire reconfigurable crossbar system." Nano Communication Networks 1, no. 4 (December 2010): 301–9. http://dx.doi.org/10.1016/j.nancom.2011.01.003.
Повний текст джерелаTrommer, Jens, Andre Heinzig, Tim Baldauf, Stefan Slesazeck, Thomas Mikolajick, and Walter M. Weber. "Functionality-Enhanced Logic Gate Design Enabled by Symmetrical Reconfigurable Silicon Nanowire Transistors." IEEE Transactions on Nanotechnology 14, no. 4 (July 2015): 689–98. http://dx.doi.org/10.1109/tnano.2015.2429893.
Повний текст джерелаShiratori, Yuta, Kensuke Miura, Rui Jia, Nan-Jian Wu, and Seiya Kasai. "Compact Reconfigurable Binary-Decision-Diagram Logic Circuit on a GaAs Nanowire Network." Applied Physics Express 3, no. 2 (January 29, 2010): 025002. http://dx.doi.org/10.1143/apex.3.025002.
Повний текст джерелаYellambalase, Yadunandana, and Minsu Choi. "Cost-driven repair optimization of reconfigurable nanowire crossbar systems with clustered defects." Journal of Systems Architecture 54, no. 8 (August 2008): 729–41. http://dx.doi.org/10.1016/j.sysarc.2008.01.001.
Повний текст джерелаDuan, Jingyu, Janne S. Lehtinen, Michael A. Fogarty, Simon Schaal, Michelle M. L. Lam, Alberto Ronzani, Andrey Shchepetov, et al. "Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire." Applied Physics Letters 118, no. 16 (April 19, 2021): 164002. http://dx.doi.org/10.1063/5.0040259.
Повний текст джерелаDarbandy, Ghader, Martin Claus, and Michael Schroter. "High-Performance Reconfigurable Si Nanowire Field-Effect Transistor Based on Simplified Device Design." IEEE Transactions on Nanotechnology 15, no. 2 (March 2016): 289–94. http://dx.doi.org/10.1109/tnano.2016.2521897.
Повний текст джерелаSingh, Sangeeta, Ruchir Sinha, and P. N. Kondekar. "A novel ultra steep dynamically reconfigurable electrostatically doped silicon nanowire Schottky Barrier FET." Superlattices and Microstructures 93 (May 2016): 40–49. http://dx.doi.org/10.1016/j.spmi.2016.02.039.
Повний текст джерелаBiswas, Ayan K., Jayasimha Atulasimha, and Supriyo Bandyopadhyay. "Energy-Efficient Hybrid Spintronic–Straintronic Nonvolatile Reconfigurable Equality Bit Comparator." SPIN 07, no. 02 (May 23, 2017): 1750004. http://dx.doi.org/10.1142/s2010324717500047.
Повний текст джерелаBaldauf, Tim, André Heinzig, Jens Trommer, Thomas Mikolajick, and Walter Michael Weber. "Tuning the tunneling probability by mechanical stress in Schottky barrier based reconfigurable nanowire transistors." Solid-State Electronics 128 (February 2017): 148–54. http://dx.doi.org/10.1016/j.sse.2016.10.009.
Повний текст джерелаMikolajick, T., A. Heinzig, J. Trommer, T. Baldauf, and W. M. Weber. "The RFET—a reconfigurable nanowire transistor and its application to novel electronic circuits and systems." Semiconductor Science and Technology 32, no. 4 (March 1, 2017): 043001. http://dx.doi.org/10.1088/1361-6641/aa5581.
Повний текст джерелаHongal, Veeresh, Raghavendra Kotikalapudi, and Minsu Choi. "Design, Test, and Repair of MLUT (Memristor Look-Up Table) Based Asynchronous Nanowire Reconfigurable Crossbar Architecture." IEEE Journal on Emerging and Selected Topics in Circuits and Systems 4, no. 4 (December 2014): 427–37. http://dx.doi.org/10.1109/jetcas.2014.2361067.
Повний текст джерелаShiratori, Yuta, Kensuke Miura, and Seiya Kasai. "Programmable nano-switch array using SiN/GaAs interface traps on a GaAs nanowire network for reconfigurable BDD logic circuits." Microelectronic Engineering 88, no. 8 (August 2011): 2755–58. http://dx.doi.org/10.1016/j.mee.2010.12.007.
Повний текст джерелаYu, Zhiqiang, Qing Shi, Huaping Wang, Junyi Shang, Qiang Huang, and Toshio Fukuda. "Controllable Melting and Flow of Ag in Self-Formed Amorphous Carbonaceous Shell for Nanointerconnection." Micromachines 13, no. 2 (January 29, 2022): 213. http://dx.doi.org/10.3390/mi13020213.
Повний текст джерелаSingh, Sangeeta, P. N. Kondekar, and Ruchir Sinha. "Estimation of Analog/Radio-Frequency Figures-of-Merits and Circuit Performance of Dynamically Reconfigurable Electrostatically Doped Silicon Nanowire Schottky Barrier FET." Journal of Nanoelectronics and Optoelectronics 12, no. 4 (April 1, 2017): 343–51. http://dx.doi.org/10.1166/jno.2017.2013.
Повний текст джерелаZou, Qiushun, Wenjie Liu, Yang Shen, and Chongjun Jin. "Flexible plasmonic modulators induced by the thermomechanical effect." Nanoscale 11, no. 24 (2019): 11437–44. http://dx.doi.org/10.1039/c9nr04068d.
Повний текст джерелаSchonbrun, Ethan, Kwanyong Seo, and Kenneth B. Crozier. "Reconfigurable Imaging Systems Using Elliptical Nanowires." Nano Letters 11, no. 10 (October 12, 2011): 4299–303. http://dx.doi.org/10.1021/nl202324s.
Повний текст джерелаZhang, Douguo, Ruxue Wang, Yifeng Xiang, Yan Kuai, Cuifang Kuang, Ramachandram Badugu, Yingke Xu, et al. "Silver Nanowires for Reconfigurable Bloch Surface Waves." ACS Nano 11, no. 10 (September 20, 2017): 10446–51. http://dx.doi.org/10.1021/acsnano.7b05638.
Повний текст джерелаBegari, Krishna, and Arabinda Haldar. "Reconfigurable microwave properties of zigzag magnetic nanowires." Journal of Physics D: Applied Physics 53, no. 45 (August 18, 2020): 455005. http://dx.doi.org/10.1088/1361-6463/aba571.
Повний текст джерелаLiang, Zexi, and Donglei Fan. "Visible light–gated reconfigurable rotary actuation of electric nanomotors." Science Advances 4, no. 9 (September 2018): eaau0981. http://dx.doi.org/10.1126/sciadv.aau0981.
Повний текст джерелаGuo, Jie, Yong Zhou, Huajun Yuan, Ding Zhao, Yanling Yin, Kuo Hai, Yuehua Peng, Weichang Zhou, and Dongsheng Tang. "Reconfigurable resistive switching devices based on individual tungsten trioxide nanowires." AIP Advances 3, no. 4 (April 2013): 042137. http://dx.doi.org/10.1063/1.4804067.
Повний текст джерелаIftimie, S., A. Radu, and D. Dragoman. "Reconfigurable logic gates in nanowires with Rashba spin-orbit interaction." Physica E: Low-dimensional Systems and Nanostructures 120 (June 2020): 114064. http://dx.doi.org/10.1016/j.physe.2020.114064.
Повний текст джерелаKhan, Muhammad Bilal, Dipjyoti Deb, Jochen Kerbusch, Florian Fuchs, Markus Löffler, Sayanti Banerjee, Uwe Mühle, et al. "Towards Reconfigurable Electronics: Silicidation of Top-Down Fabricated Silicon Nanowires." Applied Sciences 9, no. 17 (August 22, 2019): 3462. http://dx.doi.org/10.3390/app9173462.
Повний текст джерелаPatra, Partha Pratim, Rohit Chikkaraddy, Sreeja Thampi, Ravi P. N. Tripathi, and G. V. Pavan Kumar. "Large-scale dynamic assembly of metal nanostructures in plasmofluidic field." Faraday Discussions 186 (2016): 95–106. http://dx.doi.org/10.1039/c5fd00127g.
Повний текст джерелаJeon, Dae-Young, So Jeong Park, Sebastian Pregl, Thomas Mikolajick, and Walter M. Weber. "Reconfigurable thin-film transistors based on a parallel array of Si-nanowires." Journal of Applied Physics 129, no. 12 (March 28, 2021): 124504. http://dx.doi.org/10.1063/5.0036029.
Повний текст джерелаBoehm, Sarah J., Lan Lin, Nermina Brljak, Nicole R. Famularo, Theresa S. Mayer, and Christine D. Keating. "Reconfigurable Positioning of Vertically-Oriented Nanowires Around Topographical Features in an AC Electric Field." Langmuir 33, no. 41 (October 3, 2017): 10898–906. http://dx.doi.org/10.1021/acs.langmuir.7b02163.
Повний текст джерела"Reconfigurable Nanowire Electronics." ECS Meeting Abstracts, 2011. http://dx.doi.org/10.1149/ma2011-01/18/1191.
Повний текст джерелаLee, Hoo-Cheol, Jungkil Kim, Ha-Reem Kim, Kyoung-Ho Kim, Kyung-Jun Park, Jae-Pil So, Jung Min Lee, Min-Soo Hwang, and Hong-Gyu Park. "Nanograin network memory with reconfigurable percolation paths for synaptic interactions." Light: Science & Applications 12, no. 1 (May 15, 2023). http://dx.doi.org/10.1038/s41377-023-01168-5.
Повний текст джерелаGartside, Jack C., Son G. Jung, Seung Y. Yoo, Daan M. Arroo, Alex Vanstone, Troy Dion, Kilian D. Stenning, and Will R. Branford. "Current-controlled nanomagnetic writing for reconfigurable magnonic crystals." Communications Physics 3, no. 1 (November 30, 2020). http://dx.doi.org/10.1038/s42005-020-00487-y.
Повний текст джерелаKim, Taekham, Doohyeok Lim, Jaemin Son, Kyoungah Cho, and Sangsig Kim. "Reconfiguration of operation modes in silicon nanowire field-effect transistors by electrostatic virtual doping." Nanotechnology, July 1, 2022. http://dx.doi.org/10.1088/1361-6528/ac7dae.
Повний текст джерелаZhu, Zhongyunshen, Anton E. O. Persson, and Lars-Erik Wernersson. "Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor." Nature Communications 14, no. 1 (May 3, 2023). http://dx.doi.org/10.1038/s41467-023-38242-w.
Повний текст джерелаQuijada, Jorge Navarro, Tim Baldauf, Shubham Rai, Andre Heinzig, Akash Kumar, Walter M. Weber, Thomas Mikolajick, and Jens Trommer. "A Germanium Nanowire Reconfigurable Transistor Model for Predictive Technology Evaluation." IEEE Transactions on Nanotechnology, 2022, 1–8. http://dx.doi.org/10.1109/tnano.2022.3221836.
Повний текст джерелаLiang, Zexi, Daniel Teal, and Donglei (Emma) Fan. "Light programmable micro/nanomotors with optically tunable in-phase electric polarization." Nature Communications 10, no. 1 (November 21, 2019). http://dx.doi.org/10.1038/s41467-019-13255-6.
Повний текст джерела"(Invited) High-Yield Reconfigurable Silicon and Germanium Nanowire Transistors and Compact Logic Circuits." ECS Meeting Abstracts, 2016. http://dx.doi.org/10.1149/ma2016-02/37/2315.
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