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1
Sendi, Aymen, Philippe Menini, Myrtil L. Kahn, Katia Fajerwerg, and Pierre Fau. "Effect of Nanostructured Octahedral SnO2 Added with a Binary Mixture P-Type and N-Type Metal Oxide on CO Detection." Proceedings 2, no. 13 (December 3, 2018): 986. http://dx.doi.org/10.3390/proceedings2130986.
Повний текст джерелаАнотація:
In this work, we study the effect of nanostructured octahedral SnO2 added with a binary mixture p-type and n-type metal oxide semiconductors of CuO and ZnO, on CO detection at two concentrations (100 ppm and 1000 ppm). These metal oxides (SnO2 and binary mixture of CuO75%/ZnO25%) are prepared in the form of a serigraphy paste and deposited on an optimized silicon micro-hotplate. The sensors can be operated at temperature of 550 °C with a low energy consumption of only 55 mW. The binary and ternary mixtures of metal oxide are operated at different working temperature to optimize their sensitivity to CO.
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Ma, Liang, Shuang Chen, Yun Shao, You-Long Chen, Mo-Xi Liu, Hai-Xia Li, Yi-Ling Mao, and Si-Jing Ding. "Recent Progress in Constructing Plasmonic Metal/Semiconductor Hetero-Nanostructures for Improved Photocatalysis." Catalysts 8, no. 12 (December 7, 2018): 634. http://dx.doi.org/10.3390/catal8120634.
Повний текст джерелаАнотація:
Hetero-nanomaterials constructed by plasmonic metals and functional semiconductors show enormous potential in photocatalytic applications, such as in hydrogen production, CO2 reduction, and treatment of pollutants. Their photocatalytic performances can be better regulated through adjusting structure, composition, and components’ arrangement. Therefore, the reasonable design and synthesis of metal/semiconductor hetero-nanostructures is of vital significance. In this mini-review, we laconically summarize the recent progress in efficiently establishing metal/semiconductor nanomaterials for improved photocatalysis. The defined photocatalysts mainly include traditional binary hybrids, ternary multi-metals/semiconductor, and metal/multi-semiconductors heterojunctions. The underlying physical mechanism for the enhanced photocatalysis of the established photocatalysts is highlighted. In the end, a brief summary and possible future perspectives for further development in this field are demonstrated.
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Durbach, Sebastien, Lars Schniedermeyer, Anna Marx, and Norbert Hampp. "Laser-Induced Au Catalyst Generation for Tailored ZnO Nanostructure Growth." Nanomaterials 13, no. 7 (April 2, 2023): 1258. http://dx.doi.org/10.3390/nano13071258.
Повний текст джерелаАнотація:
ZnO nanostructures, semiconductors with attractive optical properties, are typically grown by thermal chemical vapor deposition for optimal growth control. Their growth is well investigated, but commonly results in the entire substrate being covered with identical ZnO nanostructures. At best a limited, binary growth control is achieved with masks or lithographic processes. We demonstrate nanosecond laser-induced Au catalyst generation on Si(100) wafers, resulting in controlled ZnO nanostructure growth. Scanning electron and atomic force microscopy measurements reveal the laser pulse’s influence on the substrate’s and catalyst’s properties, e.g., nanoparticle size and distribution. The laser-induced formation of a thin SiO2-layer on the catalysts plays a key role in the subsequent ZnO growth mechanism. By tuning the irradiation parameters, the width, density, and morphology of ZnO nanostructures, i.e., nanorods, nanowires, and nanobelts, were controlled. Our method allows for maskless ZnO nanostructure designs locally controlled on Si-wafers.
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Bouroushian, M., and T. Kosanovic. "Photoelectrochemical Measurements on Cathodically Electrodeposited Films of Cadmium and Zinc Chalcogenide Compounds." Materials Science Forum 480-481 (March 2005): 1–12. http://dx.doi.org/10.4028/www.scientific.net/msf.480-481.1.
Повний текст джерелаАнотація:
A variety of electrochemical and electrical techniques is employed in order to determine useful parameters of the optical behaviour of thin semiconducting films. In particular, this work is intended to the characterization of cathodically electrodeposited binary and ternary cadmium and zinc selenides and tellurides by photoelectrochemical (PEC) tests. Typical solid-state techniques, such as reflection, laser assisted photoreflection, resistivity and Hall effect measurements are used as well. A plain relation between crystal structure/film morphology and PEC behavior is established so long as the electrochemical preparation method is capable to explicitly control the deposit structure. In certain cases, a particular charge transfer mechanism in the semiconductor, associated with the existence of a nanostructure, is shown to result in higher photoconversion efficiencies as compared to larger-grained films.
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Sheikh, Tahir Ali, Abdullah M. Asiri, Amna Siddique, Hadi M. Marwani, Md Rezaur Rahman, Muhammad Nadeem Akhtar, and Mohammed M. Rahman. "A Comprehensive Study of Electrocatalytic Degradation of M-Tolylhydrazine with Binary Metal Oxide (Er2O3@NiO) Nanocomposite Modified Glassy Carbon Electrode." Catalysts 13, no. 5 (May 19, 2023): 905. http://dx.doi.org/10.3390/catal13050905.
Повний текст джерелаАнотація:
Generally, our ecosystem is continuously contaminated as a result of anthropogenic activities that form the basis of our comfort in our routine life. Thus, most scientists are engaged in the development of new technologies that can be used in environmental remediation. Herein, highly calcined binary metal oxide (Er2O3@NiO) semiconductor nanocomposite (NC) was synthesized using a classical wet chemical process with the intention to both detect and degrade the toxic chemicals in an aqueous medium using a novel electrochemical current–potential (I–V) approach for the first time. Optical, morphological, and structural properties of the newly synthesized semiconductor NC were also studied in detail using FT-IR, UV/Vis., FESEM-EDS, XPS, BET, EIS, and XRD techniques. Then, a modified glassy carbon electrode (GCE) based on the newly synthesized semiconductor nanocomposite (Er2O3@NiO-NC/Nafion/GCE) as a selective electrochemical sensor was fabricated with the help of 5% ethanolic-Nafion as the conducting polymer binder in order to both detect and electro-hydrolyze toxic chemicals in an aqueous medium. Comparative study showed that this newly developed Er2O3@NiO-NC/Nafion/GCE was found to be very selective against m-tolyl hydrazine (m-Tolyl HDZN) and to have good affinity in the presence of other interfering toxic chemicals. Analytical parameters were also studied in this approach to optimize the newly designed Er2O3@NiO-NC/Nafion/GCE as an efficient and selective m-Tolyl HDZN sensor. Its limit of detection (LOD) at an SNR of 3 was calculated as 0.066 pM over the linear dynamic range (LDR) of our target analyte concentration (0.1 pM–0.1 mM). The limit of quantification (LOQ) and sensitivity were also calculated as 0.22 pM and 14.50 µAµM−1cm−2, respectively. m-Tolyl HDZN is among the toxic chemicals in our ecosystem that have lethal effects in living beings. Therefore, this newly designed electrochemical sensor based on semiconductor nanostructure material offers, for the first time, a cost-effective technique, in addition to long-term stability, that can be used as an alternative for efficiently probing other toxic chemicals in real samples.
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Ikim, Mariya I., Genrikh N. Gerasimov, Vladimir F. Gromov, Olusegun J. Ilegbusi, and Leonid I. Trakhtenberg. "Synthesis, Structural and Sensor Properties of Nanosized Mixed Oxides Based on In2O3 Particles." International Journal of Molecular Sciences 24, no. 2 (January 13, 2023): 1570. http://dx.doi.org/10.3390/ijms24021570.
Повний текст джерелаАнотація:
The paper considers the relationship between the structure and properties of nanostructured conductometric sensors based on binary mixtures of semiconductor oxides designed to detect reducing gases in the environment. The sensor effect in such systems is determined by the chemisorption of molecules on the surface of catalytically active particles and the transfer of chemisorbed products to electron-rich nanoparticles, where these products react with the analyzed gas. In this regard, the role is evaluated of the method of synthesizing the composites, the catalytic activity of metal oxides (CeO2, SnO2, ZnO), and the type of conductivity of metal oxides (Co3O4, ZrO2) in the sensor process. The effect of oxygen vacancies present in the composites on the performance characteristics is also considered. Particular attention is paid to the influence of the synthesis procedure for preparing sensitive layers based on CeO2–In2O3 on the structure of the resulting composites, as well as their conductive and sensor properties.
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Rovisco, Ana, Rita Branquinho, Jorge Martins, Elvira Fortunato, Rodrigo Martins, and Pedro Barquinha. "Growth Mechanism of Seed-Layer Free ZnSnO3 Nanowires: Effect of Physical Parameters." Nanomaterials 9, no. 7 (July 11, 2019): 1002. http://dx.doi.org/10.3390/nano9071002.
Повний текст джерелаАнотація:
ZnSnO3 semiconductor nanostructures have several applications as photocatalysis, gas sensors, and energy harvesting. However, due to its multicomponent nature, the synthesis is far more complex than its binary counter parts. The complexity increases even more when aiming for low-cost and low-temperature processes as in hydrothermal methods. Knowing in detail the influence of all the parameters involved in these processes is imperative, in order to properly control the synthesis to achieve the desired final product. Thus, this paper presents a study of the influence of the physical parameters involved in the hydrothermal synthesis of ZnSnO3 nanowires, namely volume, reaction time, and process temperature. Based on this study a growth mechanism for the complex Zn:Sn:O system is proposed. Two zinc precursors, zinc chloride and zinc acetate, were studied, showing that although the growth mechanism is inherent to the material itself, the chemical reactions for different conditions need to be considered.
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Lebedev A. I. "First-principles calculations of vibrational spectra of CdSe/CdS superlattices." Physics of the Solid State 64, no. 14 (2022): 2312. http://dx.doi.org/10.21883/pss.2022.14.54328.156.
Повний текст джерелаАнотація:
The vibrational spectra of CdSe/CdS superlattices (SLs) with different layer thicknesses are calculated from first principles within the density functional theory. It is shown that, along with folded acoustic and confined optical modes, a number of confined acoustic modes appear in SLs. In structures with a minimum thickness of one of the layers, microscopic interface modes similar to local and gap modes in crystals appear. An analysis of projections of the eigenvectors of vibrational modes in SLs onto the orthonormal basis of normal modes in binary compounds enables to establish the details of formation of these vibrational modes and, in particular, to determine the degree of intermixing of acoustic and optical modes. A comparison of the frequencies of vibrational modes in CdSe/CdS SLs and CdSe/CdS nanoplatelets enables to separate the influence of size quantization and surface relaxation on the vibrational frequencies in the nanoplatelets. Keywords: phonon spectra, semiconductor superlattices, cadmium selenide, cadmium sulfide, nanostructures.
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Adelifard, M., R. Salamatizadeh, and S. A. Ketabi. "Fabrication and characterization of nanostructural WS2/WO3 binary compound semiconductors prepared by the sulfurization of sprayed thin films." Journal of Materials Science: Materials in Electronics 27, no. 5 (February 1, 2016): 5243–50. http://dx.doi.org/10.1007/s10854-016-4420-x.
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Nadikatla, Santhosh Kumar, Vinod Babu Chintada, Thirumala Rao Gurugubelli, and Ravindranadh Koutavarapu. "Review of Recent Developments in the Fabrication of ZnO/CdS Heterostructure Photocatalysts for Degradation of Organic Pollutants and Hydrogen Production." Molecules 28, no. 11 (May 23, 2023): 4277. http://dx.doi.org/10.3390/molecules28114277.
Повний текст джерелаАнотація:
Researchers have recently paid a lot of attention to semiconductor photocatalysts, especially ZnO-based heterostructures. Due to its availability, robustness, and biocompatibility, ZnO is a widely researched material in the fields of photocatalysis and energy storage. It is also environmentally beneficial. However, the wide bandgap energy and quick recombination of the photoinduced electron–hole pairs of ZnO limit its practical utility. To address these issues, many techniques have been used, such as the doping of metal ions and the creation of binary or ternary composites. Recent studies showed that ZnO/CdS heterostructures outperformed bare ZnO and CdS nanostructures in terms of photocatalytic performance when exposed to visible light. This review largely concentrated on the ZnO/CdS heterostructure production process and its possible applications including the degradation of organic pollutants and hydrogen evaluation. The importance of synthesis techniques such as bandgap engineering and controlled morphology was highlighted. In addition, the prospective uses of ZnO/CdS heterostructures in the realm of photocatalysis and the conceivable photodegradation mechanism were examined. Lastly, ZnO/CdS heterostructures’ challenges and prospects for the future have been discussed.
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Gupta, Jyoti, Prachi Singhal, and S. Sunita Rattan. "Microwave Assisted Synthesis of Molybdenum Disulphide/Tungsten Trioxide/Reduced Graphene Oxide (MoS2/WO3/RGO) Nanocomposites for Organic Vapor Sensing." IOP Conference Series: Materials Science and Engineering 1225, no. 1 (February 1, 2022): 012001. http://dx.doi.org/10.1088/1757-899x/1225/1/012001.
Повний текст джерелаАнотація:
Abstract Hybrid nanostructures based on two-dimensional (2-D) materials such as transition metal dichalcogenides (2-D TMD’s), transition metal oxides (2-D TMO’s), and graphene are gaining significant attention for their potential application as semiconductor sensing devices owing to their excellent structural, electronic, and optical characteristics. The present work reported 2-D ternary nanocomposites (MoS2/WO3/RGO) as organic vapor sensing material, synthesized using microwave assisted method. Formation of ternary composite system proves to be an efficient strategy to develop novel high performance vapour sensors, providing multiple degrees of freedom and opportunity to exploit the synergistic properties of the resulting material to its full potential for a particular application. The synthesized MoS2/WO3/RGO nanocomposites has been characterized for morphological, and structural analysis through SEM, XRD and FTIR spectroscopic techniques. The electrical and sensing studies of synthesized material is evaluated through IV characteristics using Keithley electrometer. The sensing characteristics has revealed that the synthesized sensor has high sensitivity, good stability at room temperature and outperforms the result obtained from single or binary counterparts. The formation of the heterojunction and electronic modulations at the interface of MoS2, WO3 and RGO results in improved surface charge transfer mechanism and enhancement of sensing performance.
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Al-Zahranil, Asla A., Zulkarnain Zainal, Zainal Abdib Talib, Hong Ngee Lim, and Araa Mebdir Holi. "Study the Effect of the Heat Treatment on the Photoelectrochemical Performance of Binary Heterostructured Photoanode Ag2S/ ZnO Nanorod Arrays in Photoelectrochemical Cells." Materials Science Forum 1002 (July 2020): 187–99. http://dx.doi.org/10.4028/www.scientific.net/msf.1002.187.
Повний текст джерелаАнотація:
Heterostructured semiconductors are considered one of the most significant candidates for photoelectrochemical cells (PECs) water splitting because of their visible photovoltaic features. Hence, this study displayed the synthesis of Ag2S NPs/ZnO nanorods arrays (NRAs) as a function of annealing temperature in the range between 100 °C and 500 °C. The heterostructured photoanode was fabricated through two- simple steps synthesis; the first one was hydrothermal method (HT) and the second one successive ionic layer adsorption and reaction (SILAR) method. Structural morphology characteristics, chemical conformation and properties of synthesized nanostructure were studied via different characterization techniques such as field emission scanning electron microscopy (FE-SEM), X-ray diffraction spectroscopy (XRD), HR-TEM and EDX, correspondingly. The XRD results showed that the hexagonal phase of ZnO NRAs combined successfully with monoclinicAg2S nanoparticles. The optical properties throughout absorbance spectra disclosed that with increasing the annealing temperature, the absorbance edges shifted toward extended wavelength indicating considerable enhancement in the optical properties upon the heat -treatment. Additionally, Ag2S nanoparticles/ZnO NRAs was employed as a working photoanode in photoelectrochemical cell consists of three-electrodes configuration. The result showed an important improvement in the performance of photoelectrochemical cell. It was observed that Ag2S/ZnO NRAs upon annealing at 400 °C showed an impressive photocurrent density, photoconversion efficiency of 2.73 mA/cm2 and 2.33%, respectively by achieving ~8 times higher compared to ZnO NRAs (0.337 mA/cm2). Such this enhancement was attributed to the morphological structure improvement, crystallinity and optical properties enhancement of the heterostructured photoanode after the conducting annealing process.
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Abgaryan, K. K., and I. S. Kolbin. "Calculation of the effective thermal conductivity of a superlattice based on the Boltzmann transport equation using first-principle calculations." Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering 22, no. 3 (January 19, 2020): 190–96. http://dx.doi.org/10.17073/1609-3577-2019-3-190-196.
Повний текст джерелаАнотація:
In this work, we calculate the effective thermal conductivity coefficient for a binary semiconductor heterostructure using the GaAs/AlAs superlattice as an example. Different periods of layers and different ambient temperatures are considered. At the scale under consideration, the use of models based on the Fourier law is very limited, since they do not take into account the quantum-mechanical properties of materials, which gives a strong discrepancy with experimental data. On the other hand, the use of molecular dynamics methods allows us to obtain accurate solutions, but they are significantly more demanding on computing resources and also require solving a non-trivial problem of potential selection. When considering nanostructures, good results were shown by methods based on the solution of the Boltzmann transport equation for phonons; they allow one to obtain a fairly accurate solution, while having less computational complexity than molecular dynamics methods. To calculate the thermal conductivity coefficient, a modal suppression model is used that approximates the solution of the Boltzmann transport equation for phonons. The dispersion parameters and phonon scattering parameters are obtained from first-principle calculations. The work takes into account 2-phonon (associated with isotopic disorder and barriers) and 3-phonon scattering processes. To increase the accuracy of calculations, the non-digital profile of the distribution of materials among the layers of the superlattice is taken into account. The obtained results are compared with experimental data showing good agreement.
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Olyaee, Saeed. "Ultra-fast and compact all-optical encoder based on photonic crystal nano-resonator without using nonlinear materials." Photonics Letters of Poland 11, no. 1 (April 3, 2019): 10. http://dx.doi.org/10.4302/plp.v11i1.890.
Повний текст джерелаАнотація:
In this paper an ultra-compact all-optical encoder is presented by using a two-dimensional photonic crystal. The designed logic gate is based on the interference effect. The proposed structure consists of several photonic crystal waveguides connected by 2 nano-resonators. The nano-resonators are designed to reduce the size of the radius of the dielectric rods. The contrast ratios and delay time for the proposed all-optical encoder are respectively 6 dB and 125 fs. The size of the structure is equal to 132 µm2. Equality of the output power in the logic states “one”, the small dimensions, the low delay time, compact and simple structure have shown that the logic gate is suitable for the using in optical integrated circuits. Full Text: PDF ReferencesA. Salmanpour, Sh. Mohammadnejad, A. Bahrami, "Photonic crystal logic gates: an overview", Optical and Quantum Electronics. 47, 2249 (2015). CrossRef S. C. Xavier, B. E. Carolin, A. p. Kabilan, W. Johnson, "Compact photonic crystal integrated circuit for all-optical logic operation", IET Optoelectronics. 10, 142 (2016). CrossRef Y. Miyoshi, K. Ikeda, H. Tobioka, T. Inoue, S. Namiki, K. Kitayama, "Ultrafast all-optical logic gate using a nonlinear optical loop mirror based multi-periodic transfer function", Optics Express. 16, 2570 (2008). CrossRef D. K. Gayen, A. Bhattachryya, T. Chattopadhyay, J. N. Roy, "Ultrafast All-Optical Half Adder Using Quantum-Dot Semiconductor Optical Amplifier-Based Mach-Zehnder Interferometer", Journal of Lightwave Technology. 30, 3387 (2012). CrossRef A. Mohebzadeh-Bahabady, S. Olyaee, "All-optical NOT and XOR logic gates using photonic crystal nano-resonator and based on an interference effect", IET Optoelectronics. 12, 191 (2018). CrossRef Z. Mohebbi, N. Nozhat, F. Emami, "High contrast all-optical logic gates based on 2D nonlinear photonic crystal", Optics Communications. 355, 130 (2015). CrossRef M. Mansouri-Birjandi, M. Ghadrdan, "Full-optical tunable add/drop filter based on nonlinear photonic crystal ring resonators", Photonics and Nanostructures-Fundamentals and Applications. 21, 44 (2016). CrossRef H. Alipour-Banaei, S. Serajmohammadi, F. Mehdizadeh, "Effect of scattering rods in the frequency response of photonic crystal demultiplexers", Journal of Optoelectronics and Advanced Materials. 17, 259 (2015). DirectLink A. Mohebzadeh-Bahabady, S. Olyaee, H. Arman, "Optical Biochemical Sensor Using Photonic Crystal Nano-ring Resonators for the Detection of Protein Concentration", Current Nanoscience. 13, 421 (2017). CrossRef S. Olyaee, A. Mohebzadeh-Bahabady, "Designing a novel photonic crystal nano-ring resonator for biosensor application", Optical and Quantum Electronics. 47, 1881 (2015). CrossRef F. Parandin, R. Malmir, M. Naseri, A. Zahedi, "Reconfigurable all-optical NOT, XOR, and NOR logic gates based on two dimensional photonic crystals", Superlattices and Microstructures. 113, 737 (2018). CrossRef F. Mehdizadeh, M. Soroosh, H. Alipour-Banaei, "Proposal for 4-to-2 optical encoder based on photonic crystals", IET Optoelectronics. 11, 29 (2017). CrossRef M. Hassangholizadeh-Kashtiban, R. Sabbaghi-Nadooshan, H. Alipour-Banaei, "A novel all optical reversible 4 × 2 encoder based on photonic crystals", Optik. 126, 2368 (2015). CrossRef T. A. Moniem, "All-optical digital 4 × 2 encoder based on 2D photonic crystal ring resonators", Journal of Modern Optics. 63, 735 (2016). CrossRef S. Gholamnejad, M. Zavvari, "Design and analysis of all-optical 4–2 binary encoder based on photonic crystal", Optical and Quantum Electronics. 49, 302 (2017). CrossRef H. Seif-Dargahi, "Ultra-fast all-optical encoder using photonic crystal-based ring resonators", Photonic Network Communications. 36, 272 (2018). CrossRef S. Olyaee, M. Seifouri, A. Mohebzadeh-Bahabady, and M. Sardari, "Realization of all-optical NOT and XOR logic gates based on interference effect with high contrast ratio and ultra-compacted size", Optical and Quantum Electronics. 50, 12 (2018). CrossRef C. J. Wu, C. P. Liu, Z. Ouyang, "Compact and low-power optical logic NOT gate based on photonic crystal waveguides without optical amplifiers and nonlinear materials", Applied Optics.51, 680 (2012). CrossRef Y. C. Jiang, S. B. Liu, H. F. Zhang, X. K. Kong. "Realization of all optical half-adder based on self-collimated beams by two-dimensional photonic crystals", Optics Communications. 348, 90 (2015). CrossRef A. Salmanpour, S. Mohammadnejad, P. T. Omran, "All-optical photonic crystal NOT and OR logic gates using nonlinear Kerr effect and ring resonators", Optical and Quantum Electronics. 47, 3689 (2015). CrossRef E. H. Shaik, N. Rangaswamy, "Single photonic crystal structure for realization of NAND and NOR logic functions by cascading basic gates", Journal of Computational Electronics. 17, 337 (2018). CrossRef
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Arbiol, J., J. R. Morante, M. Rumyantseva, V. Kovalenko, and A. Gaskov. "Fe2O3:SnO2 Nanostructured System as Semiconductor Gas Sensor Material." MRS Proceedings 828 (2004). http://dx.doi.org/10.1557/proc-828-a5.15.
Повний текст джерелаАнотація:
ABSTRACTIn the present work, we report a detailed study based on transmission electron microscopy of the microstructure and composition of the Fe2O3: SnO2 nanometrical binary system obtained by sol-gel. We studied a set of samples based in a pure Fe2O3 material where we added SnO 2 from 0 to 50% Sn-Fe nominal content. The structure of our composites will change from pure a-Fe2O3 to the well-known cassiterite SnO 2 structure for high Sn content. Distortions on the structural parameters will be attributed to the presence Sn4+ ions on the α-Fe2O3 structure and Fe3+ ions on the SnO2 cassiterite structure.
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Tapia-Ruiz, Nuria, Alexandra G. Gordon, Catherine M. Jewell, Hannah K. Edwards, Charles W. Dunnill, James M. Blackman, Colin P. Snape, et al. "Low dimensional nanostructures of fast ion conducting lithium nitride." Nature Communications 11, no. 1 (September 8, 2020). http://dx.doi.org/10.1038/s41467-020-17951-6.
Повний текст джерелаАнотація:
Abstract As the only stable binary compound formed between an alkali metal and nitrogen, lithium nitride possesses remarkable properties and is a model material for energy applications involving the transport of lithium ions. Following a materials design principle drawn from broad structural analogies to hexagonal graphene and boron nitride, we demonstrate that such low dimensional structures can also be formed from an s-block element and nitrogen. Both one- and two-dimensional nanostructures of lithium nitride, Li3N, can be grown despite the absence of an equivalent van der Waals gap. Lithium-ion diffusion is enhanced compared to the bulk compound, yielding materials with exceptional ionic mobility. Li3N demonstrates the conceptual assembly of ionic inorganic nanostructures from monolayers without the requirement of a van der Waals gap. Computational studies reveal an electronic structure mediated by the number of Li-N layers, with a transition from a bulk narrow-bandgap semiconductor to a metal at the nanoscale.
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Zhang, Dandan, Jianbo De, Yilong Lei, and Hongbing Fu. "Organic multicomponent microparticle libraries." Nature Communications 12, no. 1 (March 23, 2021). http://dx.doi.org/10.1038/s41467-021-22060-z.
Повний текст джерелаАнотація:
AbstractMultimetallic nanostructures can be synthesized by integrating up to seven or eight metallic elements into a single nanoparticle, which represent a great advance in developing complex multicomponent nanoparticle libraries. Contrary, organic micro- and nanoparticles beyond three π-conjugated components have not been explored because of the diversity and structural complexity of molecular assemblies. Here, we report a library of microparticles composed of an arbitrary combination of four luminescent organic semiconductors. We demonstrate that the composition and emission color of each domain as well as its spatial distribution can be rationally modulated. Unary, binary, ternary, and quaternary microparticles are thus realized in a predictable manner based on the miscibility of the components, resulting in mixed-composition phases or alloyed or phase separated heterostructures. This work reports a simple yet available synthetic methodology for rational modulation of organic multicomponent microparticles with complex architectures, which can be used to direct the design of functional microparticles.
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Montes-Gutierrez, Jorge, Ana Lopez-Gastelum, Frank Romo-García, and Rafael Garcia-Gutierrez. "Design and Construction of an ALD Reactor by Growth of Al2O3 Nanostructure Films." Revista de Ingeniería Tecnológica, December 31, 2021, 27–31. http://dx.doi.org/10.35429/jten.2021.16.5.27.31.
Повний текст джерелаАнотація:
Objective: This project focuses on designing, building and commissioning work the atomic layer deposition (ALD) reactor for Al2O3 ultrathin film, which it will be contain specific components and a system's own control unit. Methodology: The ALD reactor was designed under a system to minimize components, flow lines and connections; to reduce manufacturing costs, volume of precursors, among others. Currently, ALD reactors are expensive to sell, maintain and replace parts. The design and manufacture of the ALD reactor manufactured at the University of Sonora (UNISON) is based on the state art with sequential binary reactions of the precursors, for the proposal for the manufacture of solar cells. Contribution: It was possible to build and commission the ALD reactor for the deposition of ultra-thin films, with the characteristics of being reproducible and scalable, which makes it attractive for commercialization. The homemade ALD reactor at UNISON is considered a very interesting equipment for the semiconductor research area, since it is possible to combine different types of materials in the form of films such as oxides and nitrides in the order of Angstroms (Ǻ).
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Yang, Chanuk, Jae-Hyun Lee, Myunglae Jo, Hyung Kook Choi, Seondo Park, Young Duck Kim, Sung Un Cho, Donguk Kim, and Yun Daniel Park. "Nanomachining-enabled strain manipulation of magnetic anisotropy in the free-standing GaMnAs nanostructures." Scientific Reports 9, no. 1 (September 20, 2019). http://dx.doi.org/10.1038/s41598-019-50115-1.
Повний текст джерелаАнотація:
Abstract Strain perturbs atomic ordering in solids, with far-reaching consequences from an increased carrier mobility to localization in Si, stabilization of electric dipoles and nanomechanical transistor action in oxides, to the manipulation of spins without applying magnetic fields in n-GaAs. In GaMnAs, a carrier-mediated ferromagnetic semiconductor, relativistic spin-orbit interactions – highly strain-dependent magnetic interactions – play a crucial role in determining the magnetic anisotropy (MA) and anisotropic magnetoresistance (AMR). Strain modifies the MA and AMR in a nanomachined GaMnAs structure as measured by the anomalous Hall effect (AHE) and the planar Hall effect (PHE). Here, we report an MA modification by strain relaxation in an isolated GaMnAs Hall bar structure and by applying a range of local strains via fabricating asymmetrically mechanically buckled GaMnAs micro-Hall bar structures. In the AHE and PHE measurements, we observe a reduction in the in-plane MA and an enhancement in the out-of-plane MA as the compressive strain due to the lattice mismatch relaxes in the suspended structure. The functionality of such mechanical manipulation, as well as the two-level mechanical state and the corresponding AHE responses, is demonstrated by a fully scalable binary mechanical memory element in a GaMnAs single Hall cross structure.