Статті в журналах з теми "Nanoelectronic device"
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Nikolić, K., M. Forshaw, and R. Compañó. "The Current Status of Nanoelectronic Devices." International Journal of Nanoscience 02, no. 01n02 (February 2003): 7–29. http://dx.doi.org/10.1142/s0219581x03001048.
Повний текст джерелаKosina, Hans, and Siegfried Selberherr. "Device Simulation Demands of Upcoming Microelectronics Devices." International Journal of High Speed Electronics and Systems 16, no. 01 (March 2006): 115–36. http://dx.doi.org/10.1142/s0129156406003576.
Повний текст джерелаWhite, Marvin H., Yu (Richard) Wang, Stephen J. Wrazien, and Yijie (Sandy) Zhao. "ADVANCEMENTS IN NANOELECTRONIC SONOS NONVOLATILE SEMICONDUCTOR MEMORY (NVSM) DEVICES AND TECHNOLOGY." International Journal of High Speed Electronics and Systems 16, no. 02 (June 2006): 479–501. http://dx.doi.org/10.1142/s0129156406003801.
Повний текст джерелаPanfilov, Y. V., I. A. Rodionov, I. A. Ryzhikov, A. S. Baburin, D. O. Moskalev, and E. S. Lotkov. "Ultrathin film deposition for nanoelectronic device manucturing." IOP Conference Series: Materials Science and Engineering 781 (May 5, 2020): 012021. http://dx.doi.org/10.1088/1757-899x/781/1/012021.
Повний текст джерелаSaxena, Shubhangi, and Kamsali Manjunathachari. "Novel Nanoelectronic Materials and Devices: For Future Technology Node." ECS Transactions 107, no. 1 (April 24, 2022): 15701–11. http://dx.doi.org/10.1149/10701.15701ecst.
Повний текст джерелаKOSINA, HANS. "NANOELECTRONIC DEVICE SIMULATION BASED ON THE WIGNER FUNCTION FORMALISM." International Journal of High Speed Electronics and Systems 17, no. 03 (September 2007): 475–84. http://dx.doi.org/10.1142/s0129156407004667.
Повний текст джерелаNidhi, Tashi Nautiyal, and Samaresh Das. "Large-Scale Synthesis of Nickel Sulfide for Electronic Device Applications." MRS Advances 5, no. 52-53 (2020): 2727–35. http://dx.doi.org/10.1557/adv.2020.339.
Повний текст джерелаLiffmann, R., M. Homberger, M. Mennicken, S. Karthäuser, and U. Simon. "Polydiacetylene stabilized gold nanoparticles – extraordinary high stability and integration into a nanoelectrode device." RSC Advances 5, no. 125 (2015): 102981–92. http://dx.doi.org/10.1039/c5ra17545c.
Повний текст джерелаJanes, D. B., V. R. Kolagunta, M. Batistuta, B. L. Walsh, R. P. Andres, Jia Liu, J. Dicke, et al. "Nanoelectronic device applications of a chemically stable GaAs structure." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 17, no. 4 (1999): 1773. http://dx.doi.org/10.1116/1.590824.
Повний текст джерелаMüller, T., A. Lorke, Q. T. Do, F. J. Tegude, D. Schuh, and W. Wegscheider. "A three-terminal planar selfgating device for nanoelectronic applications." Solid-State Electronics 49, no. 12 (December 2005): 1990–95. http://dx.doi.org/10.1016/j.sse.2005.09.004.
Повний текст джерелаBae, Choelhwyi, and Gerald Lucovsky. "Low temperature semiconductor surface passivation for nanoelectronic device applications." Surface Science 532-535 (June 2003): 759–63. http://dx.doi.org/10.1016/s0039-6028(03)00181-x.
Повний текст джерелаWONG, H. S. PHILIP. "NANOELECTRONICS – OPPORTUNITIES AND CHALLENGES." International Journal of High Speed Electronics and Systems 16, no. 01 (March 2006): 83–94. http://dx.doi.org/10.1142/s0129156406003540.
Повний текст джерелаBondarev, A. V., and V. N. Efanov. "ANALYSIS OF DYNAMIC PROCESSES IN NANOELECTRONIC STRUCTURES BASED ON MEMRESISTIVE ELEMENTS." Izvestiya of Samara Scientific Center of the Russian Academy of Sciences 23, no. 2 (2021): 91–97. http://dx.doi.org/10.37313/1990-5378-2021-23-2-91-97.
Повний текст джерелаMennicken, Max, Sophia Katharina Peter, Corinna Kaulen, Ulrich Simon, and Silvia Karthäuser. "Impact of device design on the electronic and optoelectronic properties of integrated Ru-terpyridine complexes." Beilstein Journal of Nanotechnology 13 (February 15, 2022): 219–29. http://dx.doi.org/10.3762/bjnano.13.16.
Повний текст джерелаVahapoglu, Ensar, James P. Slack-Smith, Ross C. C. Leon, Wee Han Lim, Fay E. Hudson, Tom Day, Tuomo Tanttu, et al. "Single-electron spin resonance in a nanoelectronic device using a global field." Science Advances 7, no. 33 (August 2021): eabg9158. http://dx.doi.org/10.1126/sciadv.abg9158.
Повний текст джерелаLei, Wen, Bo Cai, Huanfu Zhou, Gunter Heymann, Xin Tang, Shengli Zhang, and Xing Ming. "Ferroelastic lattice rotation and band-gap engineering in quasi 2D layered-structure PdSe2 under uniaxial stress." Nanoscale 11, no. 25 (2019): 12317–25. http://dx.doi.org/10.1039/c9nr03101d.
Повний текст джерелаFedoseyev, Alexander I., Marek Turowski, and Marek S. Wartak. "Kinetic and Quantum Models for Nanoelectronic and Optoelectronic Device Simulation." Journal of Nanoelectronics and Optoelectronics 2, no. 3 (December 1, 2007): 234–56. http://dx.doi.org/10.1166/jno.2007.303.
Повний текст джерелаMuhonen, Juha T., Juan P. Dehollain, Arne Laucht, Fay E. Hudson, Rachpon Kalra, Takeharu Sekiguchi, Kohei M. Itoh, et al. "Storing quantum information for 30 seconds in a nanoelectronic device." Nature Nanotechnology 9, no. 12 (October 12, 2014): 986–91. http://dx.doi.org/10.1038/nnano.2014.211.
Повний текст джерелаSajjad, Muhammad, Gerardo Morell, and Peter Feng. "Advance in Novel Boron Nitride Nanosheets to Nanoelectronic Device Applications." ACS Applied Materials & Interfaces 5, no. 11 (May 23, 2013): 5051–56. http://dx.doi.org/10.1021/am400871s.
Повний текст джерелаRose, G. S., M. M. Ziegler, and M. R. Stan. "Large-signal two-terminal device model for nanoelectronic circuit analysis." IEEE Transactions on Very Large Scale Integration (VLSI) Systems 12, no. 11 (November 2004): 1201–8. http://dx.doi.org/10.1109/tvlsi.2004.836291.
Повний текст джерелаPetrakov, Dmitry S., Dmitry I. Smirnov, Nikolay N. Gerasimenko, Nurlan A. Medetov, and Azamat A. Jikeev. "Implementation of software for data processing of X-ray optical measurements for the analysis of structural parameters." Journal of Applied Crystallography 52, no. 1 (February 1, 2019): 186–92. http://dx.doi.org/10.1107/s1600576718016837.
Повний текст джерелаAbderrahmane, Abdelkader, Changlim Woo, and Pil-Ju Ko. "Low Power Consumption Gate-Tunable WSe2/SnSe2 van der Waals Tunnel Field-Effect Transistor." Electronics 11, no. 5 (March 7, 2022): 833. http://dx.doi.org/10.3390/electronics11050833.
Повний текст джерелаLe, Ha-Linh Thi, Fatme Jardali, and Holger Vach. "Deposition of hydrogenated silicon clusters for efficient epitaxial growth." Physical Chemistry Chemical Physics 20, no. 23 (2018): 15626–34. http://dx.doi.org/10.1039/c8cp00764k.
Повний текст джерелаLi, Chao, Bo Lei, Wendy Fan, Daihua Zhang, M. Meyyappan, and Chongwu Zhou. "Molecular Memory Based on Nanowire–Molecular Wire Heterostructures." Journal of Nanoscience and Nanotechnology 7, no. 1 (January 1, 2007): 138–50. http://dx.doi.org/10.1166/jnn.2007.18011.
Повний текст джерелаSchuerle, Simone, Manish K. Tiwari, Kaiyu Shou, Dimos Poulikakos, and Bradley J. Nelson. "Fabricating devices with dielectrophoretically assembled, suspended single walled carbon nanotubes for improved nanoelectronic device characterization." Microelectronic Engineering 88, no. 8 (August 2011): 2740–43. http://dx.doi.org/10.1016/j.mee.2011.01.008.
Повний текст джерелаYue, Chenxi, Shuye Jiang, Hao Zhu, Lin Chen, Qingqing Sun, and David Zhang. "Device Applications of Synthetic Topological Insulator Nanostructures." Electronics 7, no. 10 (October 1, 2018): 225. http://dx.doi.org/10.3390/electronics7100225.
Повний текст джерелаChen, An. "(Invited, Digital Presentation) Emerging Materials and Devices for Energy-Efficient Computing." ECS Meeting Abstracts MA2022-01, no. 19 (July 7, 2022): 1073. http://dx.doi.org/10.1149/ma2022-01191073mtgabs.
Повний текст джерелаEl Sachat, Alexandros, Francesc Alzina, Clivia M. Sotomayor Torres, and Emigdio Chavez-Angel. "Heat Transport Control and Thermal Characterization of Low-Dimensional Materials: A Review." Nanomaterials 11, no. 1 (January 13, 2021): 175. http://dx.doi.org/10.3390/nano11010175.
Повний текст джерелаPrasad, Vikash, and Debaprasad Das. "A Review on MOSFET-Like CNTFETs." Science & Technology Journal 4, no. 2 (July 1, 2016): 124–29. http://dx.doi.org/10.22232/stj.2016.04.02.06.
Повний текст джерелаTERANISHI, Toshiharu, and Masayuki KANEHARA. "Strategy to Fabricate Small Gold Nanoparticle Superlattices and Application to Nanoelectronic Device." Journal of the Vacuum Society of Japan 51, no. 11 (2008): 731–36. http://dx.doi.org/10.3131/jvsj2.51.731.
Повний текст джерелаHaley, Benjamin P., Sunhee Lee, Mathieu Luisier, Hoon Ryu, Faisal Saied, Steve Clark, Hansang Bae, and Gerhard Klimeck. "Advancing nanoelectronic device modeling through peta-scale computing and deployment on nanoHUB." Journal of Physics: Conference Series 180 (July 1, 2009): 012075. http://dx.doi.org/10.1088/1742-6596/180/1/012075.
Повний текст джерелаKumar, S. Bala, S. G. Tan, M. B. A. Jalil, P. Q. Cheung, and Yong Jiang. "Nanoelectronic logic device based on the manipulation of magnetic and electric barriers." Journal of Applied Physics 103, no. 5 (March 2008): 054310. http://dx.doi.org/10.1063/1.2838211.
Повний текст джерелаKang, Jeong Won, and Ho Jung Hwang. "Model schematics of a nanoelectronic device based on multi-endo-fullerenes electromigration." Physica E: Low-dimensional Systems and Nanostructures 27, no. 1-2 (March 2005): 245–52. http://dx.doi.org/10.1016/j.physe.2004.11.014.
Повний текст джерелаGan, C. L., E. K. Ng, B. L. Chan, U. Hashim, and F. C. Classe. "Technical Barriers and Development of Cu Wirebonding in Nanoelectronics Device Packaging." Journal of Nanomaterials 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/173025.
Повний текст джерелаVaknin, Yonatan, Ronen Dagan, and Yossi Rosenwaks. "Pinch-Off Formation in Monolayer and Multilayers MoS2 Field-Effect Transistors." Nanomaterials 9, no. 6 (June 14, 2019): 882. http://dx.doi.org/10.3390/nano9060882.
Повний текст джерелаBayan, Sayan, and Dambarudhar Mohanta. "Significant Fowler–Nordheim tunneling across ZnO – Nanorod based nanojunctions for nanoelectronic device applications." Current Applied Physics 13, no. 4 (June 2013): 705–9. http://dx.doi.org/10.1016/j.cap.2012.11.009.
Повний текст джерелаYang, Xiaonian, Qiang Li, Guofeng Hu, Zegao Wang, Zhenyu Yang, Xingqiang Liu, Mingdong Dong, and Caofeng Pan. "Controlled synthesis of high-quality crystals of monolayer MoS2 for nanoelectronic device application." Science China Materials 59, no. 3 (March 2016): 182–90. http://dx.doi.org/10.1007/s40843-016-0130-1.
Повний текст джерелаChuan, Mu Wen, Muhammad Amirul Irfan Misnon, Nurul Ezaila Alias, and Michael Loong Peng Tan. "Device Performance of Double-Gate Schottky-Barrier Graphene Nanoribbon Field-Effect Transistors with Physical Scaling." Journal of Nanotechnology 2023 (January 16, 2023): 1–7. http://dx.doi.org/10.1155/2023/1709570.
Повний текст джерелаCao, Liemao, Xiaohui Deng, Zhenkun Tang, Guanghui Zhou та Yee Sin Ang. "Designing high-efficiency metal and semimetal contacts to two-dimensional semiconductor γ-GeSe". Applied Physics Letters 121, № 11 (12 вересня 2022): 113104. http://dx.doi.org/10.1063/5.0117670.
Повний текст джерелаYue, Dewu, Ximing Rong, Shun Han, Peijiang Cao, Yuxiang Zeng, Wangying Xu, Ming Fang, Wenjun Liu, Deliang Zhu, and Youming Lu. "High Photoresponse Black Phosphorus TFTs Capping with Transparent Hexagonal Boron Nitride." Membranes 11, no. 12 (December 1, 2021): 952. http://dx.doi.org/10.3390/membranes11120952.
Повний текст джерелаWang, Hui, Xin Wang, Chuandong Li, and Ling Chen. "SPICE Mutator Model for Transforming Memristor into Meminductor." Abstract and Applied Analysis 2013 (2013): 1–5. http://dx.doi.org/10.1155/2013/281675.
Повний текст джерелаБондарев, А. В., and В. Н. Ефанов. "Investigation of Robustness of Nanoelectronic Structures Based on Resonant Tunneling Elements." Proceedings of Universities. Electronics 26, no. 6 (December 2021): 491–507. http://dx.doi.org/10.24151/1561-5405-2021-26-6-491-507.
Повний текст джерелаWagner, Tino, Hannes Beyer, Patrick Reissner, Philipp Mensch, Heike Riel, Bernd Gotsmann, and Andreas Stemmer. "Kelvin probe force microscopy for local characterisation of active nanoelectronic devices." Beilstein Journal of Nanotechnology 6 (November 23, 2015): 2193–206. http://dx.doi.org/10.3762/bjnano.6.225.
Повний текст джерелаSaga, Koichiro, and Takeshi Hattori. "Wafer Cleaning Using Supercritical CO2 in Semiconductor and Nanoelectronic Device Fabrication." Solid State Phenomena 134 (November 2007): 97–103. http://dx.doi.org/10.4028/www.scientific.net/ssp.134.97.
Повний текст джерелаDavidson, J. L., W. P. Kang, K. Subramanian, and Y. M. Wong. "Forms and behaviour of vacuum emission electronic devices comprising diamond or other carbon cold cathode emitters." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 366, no. 1863 (November 19, 2007): 281–93. http://dx.doi.org/10.1098/rsta.2007.2154.
Повний текст джерелаVenkataraman, Anusha, Eberechukwu Amadi, and Chris Papadopoulos. "Molecular-Scale Hardware Encryption Using Tunable Self-Assembled Nanoelectronic Networks." Micro 2, no. 3 (June 21, 2022): 361–68. http://dx.doi.org/10.3390/micro2030024.
Повний текст джерелаMajidi, Mohammad, Mohammad Taghi Ahmadi, and Meisam Rahmani. "Analytical Modeling of Carbon Nanoparticle-Based Symmetric p–n Junction." Advanced Science, Engineering and Medicine 11, no. 11 (November 1, 2019): 1031–35. http://dx.doi.org/10.1166/asem.2019.2446.
Повний текст джерелаAl-mashaal, Asaad K. Edaan, and Rebecca Cheung. "Delamination of polyimide in hydrofluoric acid." Acta Polytechnica 61, no. 6 (December 31, 2021): 684–88. http://dx.doi.org/10.14311/ap.2021.61.0684.
Повний текст джерелаCui, Huanqing, Li Cai, Sen Wang, Xiaoqiang Liu, and Xiaokuo Yang. "Accurate reliability analysis method for quantum-dot cellular automata circuits." International Journal of Modern Physics B 29, no. 29 (November 13, 2015): 1550203. http://dx.doi.org/10.1142/s0217979215502033.
Повний текст джерелаKelly, Thomas F., Keith Thompson, Emmanuelle A. Marquis, and David J. Larson. "Atom Probe Tomography Defines Mainstream Microscopy at the Atomic Scale." Microscopy Today 14, no. 4 (July 2006): 34–41. http://dx.doi.org/10.1017/s1551929500050264.
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