Дисертації з теми "Nanoelectronic device"
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Ye, Sheng. "Kelvin Probe Force Microscopy (KPFM) for nanoelectronic device characterisation." Thesis, University of Southampton, 2016. https://eprints.soton.ac.uk/419059/.
Повний текст джерелаDi, Giacomo Sandro John. "Development of silicon germanium-based quantum dots for nanoelectronic device applications." The Ohio State University, 2005. http://rave.ohiolink.edu/etdc/view?acc_num=osu1406719133.
Повний текст джерелаPENAZZI, GABRIELE. "Development of an atomistic/continous simulation tool for nanoelectronic devices." Doctoral thesis, Università degli Studi di Roma "Tor Vergata", 2010. http://hdl.handle.net/2108/1335.
Повний текст джерелаThe simulation of novel optoelectronic devices is a great challenge for the engineering community. The enoromous progress in device fabrication technology allowed such a massive downscaling that geometrical feature in the nanoscale play a crucial role. Furthermore we have a great effort in exploring alternative solutions respect to more traditional semiconductor devices. It involves molecular electronic, semiconductive polymers, self-assembled structures, quasi-one dimensional and two dimensional materials. In such scenario it's crucial to develop modular simulation tools able to connect different physical models on different length scales. Quantum effect play an important role and we need to take them into account, avoiding anyway an explosion of the computational complexity. Thus it's needed to go in the direction of a multiscale approach, which is already applied with success in mechanical science. The goal of this work is to include atomistic description and atomistic models in TiberCAD, a Technology CAD code for simulation of optoelectronic devices which can rely on excellent instruments for interfacing different models in a multyphisics/multiscale environment. Atomistic models for the calculation of strain, structure geometry and electronic states have been included. A novel technique for describing quantum transport with an efficient algorithm is also presented. These work wants to push TiberCAD to be a reference tool for calculation of complex optoeletronic devices at the nanoscale.
Pan, Chenyun. "A hierarchical optimization engine for nanoelectronic systems using emerging device and interconnect technologies." Diss., Georgia Institute of Technology, 2015. http://hdl.handle.net/1853/53931.
Повний текст джерелаChouard, Florian Raoul Verfasser], Doris [Akademischer Betreuer] [Schmitt-Landsiedel, and Sebastian M. [Akademischer Betreuer] Sattler. "Device Aging in Analog Circuits for Nanoelectronic CMOS Technologies / Florian Raoul Chouard. Gutachter: Sebastian M. Sattler ; Doris Schmitt-Landsiedel. Betreuer: Doris Schmitt-Landsiedel." München : Universitätsbibliothek der TU München, 2012. http://d-nb.info/1024355020/34.
Повний текст джерелаChiu, Pit Ho Patrio 1977. "Bismuth based nanoelectronic devices." Thesis, McGill University, 2005. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=100337.
Повний текст джерелаBlackburn, A. M. "Multiple-gate vacuum nanoelectronic devices." Thesis, University of Cambridge, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.596691.
Повний текст джерелаMaassen, Jesse. "First principles simulations of nanoelectronic devices." Thesis, McGill University, 2012. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=106463.
Повний текст джерелаComme la miniaturisation des dispositifs commence à révéler la nature atomique des matériaux, où les liaisons chimiques et les effets quantiques sont importants, nous devons recourir à une théorie sans paramètre pour obtenir des prédictions. Cette thèse étudie les propriétés de transport quantique des dispositifs nanoélectroniques en utilisant des méthodes ab initio atomiques. Notre formalisme théorique combine la théorie de la fonctionnelle de la densité (DFT) avec les fonctions de Green hors-équilibres (NEGF). Résoudre l'Hamiltonien DFT de manière auto-consistante avec la densité de charge NEGF permet de simuler des systèmes hors-équilibres sans utiliser des paramètres. Cette technique sophistiquée a été utilisée pour étudier trois problèmes liés au domaine de la nanoélectronique. Premièrement, nous avons étudié le rôle des contacts métalliques (Cu, Ni et Co) sur les caractéristiques de transport des dispositifs à base de graphène. Dans le cas du Cu, le graphène est simplement dopé en électrons (décalage du niveau de Fermi = −0.7 eV) ce qui crée une signature unique dans le profil de conduction permettant d'extraire le niveau de dopage. Avec Ni et Co, la formation de bandes interdites dépendantes du spin détruit la dispersion linéaire des états du graphène ce qui permet d'atteindre une efficacité d'injection de spin de 60% et 80%, respectivement. Deuxièmement, nous avons étudié comment des distributions de dopage contrôlées dans les nano-transistors en Si pourraient supprimer les courants de fuite à l'état OFF. En supposant que les dopants (B et P) sont confinés dans des régions de 1.1 nm dans le canal, nous avons découvert de grandes variations de conductances (Gmax/Gmin ~ 10^5) en fonction de l'emplacement du dopage. Les plus grandes fluctuations surviennent lorsque les dopants sont à proximité des électrodes. Nos résultats indiquent que si les dopants sont éloignés des électrodes, d'une distance égale à 20% de la longueur du canal, le courant tunnel peut être supprimé par un facteur de 2 par rapport au dopage uniforme. Ainsi, l'ingénierie du dopage pourrait réduire les variations d'un dispositif à un autre et diminuer le courant de fuite. Dernièrement, nous avons intégré un modèle de déphasage dans notre théorie de transport ab initio qui a été utilisé pour étudier l'effet des collisions dans trois systèmes différents. Nos calculs ont révélé le rôle complexe du déphasage; parfois la conduction augmente ou diminue selon le système. Nous avons démontré que la rétrodiffusion, présent dans ce modèle, permet de récupérer la loi d'Ohm.
ROSATI, ROBERTO. "Microscopic modeling of energy dissipation and decoherence in nanoscale materials and devices." Doctoral thesis, Politecnico di Torino, 2015. http://hdl.handle.net/11583/2599755.
Повний текст джерелаROTTA, DAVIDE. "Emerging devices and materials for nanoelectronics." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2015. http://hdl.handle.net/10281/76048.
Повний текст джерелаThis work of thesis explores two emerging research device concepts as possible platforms for novel integrated circuits with unconventional functionalities. Nowadays integrated circuits with advanced performances are available at affordable costs, thanks to the progressive miniaturization of electronic components in the last decades. However, bare geometrical scaling is no more a practical way to improve the device performances and alternative strategies must be considered to achieve an equivalent scaling of the functionalities. The introduction of conceptually new devices and paradigms of information processing (Emerging Research Devices) or new materials with unconventional properties (Emerging Research Materials) are viable approaches, as indicated by the International Technology Roadmap of Semiconductors (ITRS), to enhance the functionalities of integrated circuits at the Front-End-Of-Line. The two options investigated to this respect are silicon devices for quantum computation based on a classical Complementary Metal-Oxide-Semiconductor (CMOS) platform and standard Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) based on MoS2 thin film. In particular, the integration of Quantum Information Processing (QIP) in Si would take advantage of Si-based technology to introduce a completely new paradigm of information processing that has the potential to outperform classical computers in some computational tasks, like prime number factoring and the search in a big database. MoS2, conversely, can be exfoliated up to the single layer thickness. Such intrinsic and extreme scalability makes this material suitable for end-of-roadmap ultrascaled electronic devices as well as for other applications in the fields of sensors, optoelectronics and flexible electronics. This work reports on the experimental activity carried out at Laboratory MDM-IMM-CNR in the framework of the PhD school on Nanostructures and Nanotechnology at Università di Milano Bicocca. Electron Beam Lithography (EBL) and mainstream clean-room processing techniques have been intensively utilized to fabricate CMOS devices for QIP on the one hand and to integrate mechanically exfoliated MoS2 flakes in a conventional FET structure on the other hand. After a careful calibration and optimization of the process parameters, several different Quantum Dot (QD) configurations were designed and fully realized, achieving critical dimensions under 50 nm. Such device architectures were developed on a Silicon-On-Insulator (SOI) platform, in order to eventually access a straightforward integration into the CMOS mainstream technology. Si-QDs and donor-based devices have been then tested by electrical characterization techniques at cryogenic temperatures down to 300 mK. In detail, single electron tunneling events on a donor atom have been controlled by pulsed-gate techniques in high magnetic fields up to 8T, providing a preliminary characterization for the initialization procedure of donor qubits. The control of the charge states of Si-QDs have been also demonstrated by means of stability diagrams as well as the analysis of random telegraph noise arising from single electron tunneling between two QDs. Finally, a feasibility study for the large scale integration of quantum information processing was done based on a double QD hybrid qubit architecture. On the other side, MoS2 thin film transistors have been made by mechanical exfoliation of crystalline MoS2 and electrodes definition by EBL. Electrical characterization was performed on such devices, with a particular focus on the electrical transport in a FET device and on the spectroscopy of interface traps, that turns out to be a limiting factor for the logic operation.
Sarsby, Matt. "Nanoelectronic and nanomechanical devices for low temperature applications." Thesis, Lancaster University, 2017. http://eprints.lancs.ac.uk/84447/.
Повний текст джерелаJiang, Zhe. "Novel nanowire structures and devices for nanoelectronic bioprobes." Thesis, Harvard University, 2015. http://nrs.harvard.edu/urn-3:HUL.InstRepos:17467307.
Повний текст джерелаChemistry and Chemical Biology
Hsueh, Yu-Ling. "Electron Spin Relaxation of Donors in Silicon Nanoelectronic Devices." Thesis, Purdue University, 2019. http://pqdtopen.proquest.com/#viewpdf?dispub=10638270.
Повний текст джерелаThe environment interacts with the electron and leads to electron relaxation pro cesses. To measure the relaxation rate the system is disturbed from equilibrium. T1 time characterizes the time for the system to restore equilibrium.
Understanding and controlling the spin-relaxation mechanism is crucial for real izing a spin-qubit based quantum computer. The spin-lattice relaxation time (T1) is one of the two important timescales of a qubit, and in addition, it can provide valu able information about the qubit and its interaction with the device environment. Here, we investigate the T1 time of electronic spins bound to donors in silicon in a scanning tunneling microscopy (STM) fabricated device. A tight-binding treatment of the electron-phonon problem is being developed. Together with Fermi’s Golden rule the T1 time of the system can be obtained with atomic level details. This method is extended to treat the multi-electron system, where the electron-electron interaction is captured by atomistic con?guration interaction method. We also show that under applied gate bias, an unconventional spin-orbit coupling the external electric ?eld and magnetic ?eld dominates over Rashba spin-orbit for donors in Si. Various spin relaxation mechanisms are investigated, considering both the valley repopulation and single valley e?ects. We ?nd that T1 is strongly dependent on the directions of the external magnetic and electric ?elds relative to the crystalline directions. We show good agreements between this theory and recent experimental measurements.
Escott, Christopher Colin Electrical Engineering & Telecommunications Faculty of Engineering UNSW. "Modelling of phosphorus-donor based silicon qubit and nanoelectronic devices." Publisher:University of New South Wales. Electrical Engineering & Telecommunications, 2008. http://handle.unsw.edu.au/1959.4/41470.
Повний текст джерелаVeliev, Farida. "Interfacing neurons with nanoelectronics : from silicon nanowires to carbon devices." Thesis, Université Grenoble Alpes (ComUE), 2016. http://www.theses.fr/2016GREAI001/document.
Повний текст джерелаIn line with the technological progress of last decades a variety of adapted bioelectrical interfaces was developed to record electrical activity from the nervous system reaching from whole brain activity to single neuron signaling. Although neural interfaces have reached clinical utility and are commonly used in fundamental neuroscience, their performance is still limited. In this work we investigated alternative materials and techniques, which could improve the monitoring of neuronal activity of cultured networks, and the long-term performance of prospective neuroprosthetics. While silicon nanowire transistor arrays and diamond based microelectrodes are proposed for improving the spatial resolution and the electrode stability in biological environment respectively, the main focus of this thesis is set on the evaluation of graphene based field effect transistor arrays for bioelectronics. Due to its outstanding electrical, mechanical and chemical properties graphene appears as a promising candidate for the realization of chemically stable flexible electronics required for long-term neural interfacing. Here we demonstrate the outstanding neural affinity of pristine graphene and the realization of highly sensitive fast graphene transistors for neural interfaces
Tomlinson, Christopher David. "A highly parallel image processing computer architecture suitable for implementation in nanotechnology." Thesis, University College London (University of London), 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.313616.
Повний текст джерелаKudrya, V. G., and D. A. Voronenko. "Designing Nanotechnology Matching Devices." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35357.
Повний текст джерелаSangtarash, Sara. "Theory of mid-gap quantum transport through single molecule : new approach to transport modeling of nanoelectronic devices." Thesis, Lancaster University, 2017. http://eprints.lancs.ac.uk/88312/.
Повний текст джерелаForsberg, Erik. "Electronic and Photonic Quantum Devices." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2003. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3476.
Повний текст джерелаIn this thesis various subjects at the crossroads of quantummechanics and device physics are treated, spanning from afundamental study on quantum measurements to fabricationtechniques of controlling gates for nanoelectroniccomponents.
Electron waveguide components, i.e. electronic componentswith a size such that the wave nature of the electron dominatesthe device characteristics, are treated both experimentally andtheoretically. On the experimental side, evidence of partialballistic transport at room-temperature has been found anddevices controlled by in-plane Pt/GaAs gates have beenfabricated exhibiting an order of magnitude improvedgate-efficiency as compared to an earlier gate-technology. Onthe theoretical side, a novel numerical method forself-consistent simulations of electron waveguide devices hasbeen developed. The method is unique as it incorporates anenergy resolved charge density calculation allowing for e.g.calculations of electron waveguide devices to which a finitebias is applied. The method has then been used in discussionson the influence of space-charge on gate-control of electronwaveguide Y-branch switches.
Electron waveguides were also used in a proposal for a novelscheme of carrierinjection in low-dimensional semiconductorlasers, a scheme which altogether by- passes the problem ofslow carrier relaxation in suchstructures. By studying aquantum mechanical two-level system serving as a model forelectroabsorption modulators, the ultimate limits of possiblemodulation rates of such modulators have been assessed andfound to largely be determined by the adiabatic response of thesystem. The possibility of using a microwave field to controlRabi oscillations in two-level systems such that a large numberof states can be engineered has also been explored.
A more fundamental study on quantum mechanical measurementshas been done, in which the transition from a classical to aquantum "interaction free" measurement was studied, making aconnection with quantum non-demolition measurements.
Chiruta, Daniel-Gabriel. "The analysis of hysteretic behavior in bistable spin transition nanomaterials and its applications towards nanoelectronics devices." Versailles-St Quentin en Yvelines, 2014. http://www.theses.fr/2014VERS0020.
Повний текст джерелаThe main purpose of this thesis is to develop exact methods (i. E. Matrix transfer) or semi-exact methods (using Monte Carlo technique with entropic sampling algorithm) to study the behaviour of molecular materials. Using an Ising like model that takes into account both short-range and long-range interactions in Spin Crossover (SCO materials) the response resulting from the spin state switching phenomenon (from bulk materials down to nanoscale size) was simulated. SCO materials have potential applications in the fabrication of novel devices (i. E. Storing information, sensing, and display). This work contains two main parts divided in seven chapters. The first part, the first three chapters, is devoted to some overview of SCO materials and to the description of several models and methods proposed to explain the Spin Transition (ST) phenomenon while the second part, the last four chapters, is focused on some theoretical studies on size and shape effects as well as the molecules at the surface effect in the SCO area which is a new subject. This thesis, in the field of Computing Materials Science, treats two axes. In the first axe we have modeled and simulated the behaviour of several existing materials using an Ising like model in order to understand the ST mechanism and the effects of different external factors in different SCO compounds in 1D, 2D or 3D structures. From the good agreement between the numerical and the experimental data in the first part, we have studied in the second part different architectures and we have predicted some novel SCO behaviours, obtained recently experimentally, as incomplete or multi-step transition
Penot, Alexandre. "Study of terahertz phenomena using GaN devices." Thesis, Montpellier 2, 2013. http://www.theses.fr/2013MON20260/document.
Повний текст джерелаEven if the interest upon the Terahertz (THz) domain is increasing since the 1990s, a strong research effort still needs to be done to get the most of the current and potential applications that this area of the electromagnetic spectrum has to offer in the various domains of spectroscopy, cosmology, medical imaging, security and telecommunications. Indeed, sources, detectors and even the tools that permits to amplify or modulate a signal – these devices are well developed in the neighboring regions of infrared and microwaves – are still particularly limited by characteristics like compactness, operating temperature, integrability but also power, sensitivity or cost.This thesis focuses on the experimental study of different gallium nitride (GaN) devices containing a quantum well. The main objective was to determine their capacities in emission, amplification or detection of a THz radiation.To do so, three different experimental setups where used, improved or even created in order to be able to change parameters like the electric bias, their working temperature, the probed THz frequencies and of course the different geometries of the samples.More details about the THz domain, the studied GaN electronic devices and the used experimental setups are developed in this PhD thesis.The main obtained experimental results show:- an emission of radiation near 3 THz with a tunable frequency versus electric field applied to the GaN quantum well,- a transmission coefficient variable as a function of the voltage applied to the contacts of different GaN interdigitated fingers structures,- heterodyne detection of radiation with a RF frequency of 0.3 THz and an IF that can reach up 40 GHz.In addition, each type of experimental results has been investigated theoretically using analytical models developed in collaboration with international teams during the past three years
Gasper, Michael Rober. "Nonlinear Microwave Interactions with Voltage-Gated Graphene Devices." University of Akron / OhioLINK, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=akron1596648207273845.
Повний текст джерелаPetrov, Alexander. "Principles of production of new devices for micro- and nanoelectronics on the base of materials with ion tracks." [S.l. : s.n.], 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=975458914.
Повний текст джерелаSirota, Benjamin. "Investigation into the Semiconducting and Device Properties of MoTe2 and MoS2 Ultra-Thin 2D Materials." Thesis, University of North Texas, 2018. https://digital.library.unt.edu/ark:/67531/metadc1157626/.
Повний текст джерелаBonifas, Andrew Paul. "Spectroscopy, Fabrication, and Electronic Characterization of Molecular Electronic Devices." The Ohio State University, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=osu1305653420.
Повний текст джерелаTorres, Alonso Elías. "Scalable processing and integration of 2D materials and devices." Thesis, University of Exeter, 2018. http://hdl.handle.net/10871/33456.
Повний текст джерелаOgden, Joshua Lee. "Modeling Random Dopant Fluctuation Effects in Nanoscale Tri-gate FETs." OpenSIUC, 2011. https://opensiuc.lib.siu.edu/theses/759.
Повний текст джерелаCRIPPA, ALESSANDRO. "High frequency physics and broadband instrumentation in CMOS silicon quantum devices." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2016. http://hdl.handle.net/10281/101823.
Повний текст джерелаPandey, Devashish. "Quantum transport in Solid state devices for Terahertz frequency applications." Doctoral thesis, Universitat Autònoma de Barcelona, 2020. http://hdl.handle.net/10803/671285.
Повний текст джерелаEl trabajo presentado en esta tesis está dedicado a la comprensión de desafíos prácticos y conceptuales en la simulación de propiedades dinámicas más allá de la aproximación cuasiestática en dispositivos cuánticos de estado sólido en escenarios donde es necesario un tratamiento mecánico cuántico completo. Los resultados de esta tesis son particularmente relevantes para el cálculo de las fluctuaciones de la corriente eléctrica en el régimen THz, la evaluación de los tiempos de tunelización que definen la frecuencia de corte de los dispositivos operados por alta frecuencia, o la evaluación del trabajo termodinámico para realizar motores térmicos cuánticos. Las propiedades dinámicas mencionadas anteriormente implican medidas en múltiples tiempos y, por lo tanto, son sensibles a la ""retroacción "" cuántica de la medida. En el contexto de la mecánica cuántica ortodoxa, la definición de estas propiedades dinámicas no puede separarse de la especificación del aparato de medida. Es decir, definir propiedades dinámicas intrínsecas o independientes del aparato de medida es incompatible con los postulados de la mecánica cuántica ortodoxa. Con todo, un ingeniero de dispositivos como yo, que trabaja en problemas prácticos relacionados con los dispositivos de estado sólido presentes y futuros, se ve obligado a profundizar en los fundamentos de la mecánica cuántica. En este sentido, mostraré que las dificultades asociadas a la comprensión de las propiedades dinámicas se pueden resolver mirando más allá de la mecánica cuántica ortodoxa. En particular, he explorado la interpretación modal de la mecánica cuántica, que es una teoría cuántica matemáticamente precisa que reproduce todos los fenómenos de la mecánica cuántica. Mostraré que las propiedades intrínsecas pueden definirse fácilmente en este nuevo contexto (no ortodoxo). Es importante destacar que demostraré también que las propiedades intrínsecas pueden identificarse con la medida de ""weak values"" y que, por lo tanto, ¡pueden medirse! Enfocado en una teoría modal particular, a saber la mecánica de Bohm, se discutirá y aplicará un simulador de transporte de electrones para abordar cuestiones metodológicas y prácticas relacionadas con la simulación del transporte cuántico de electrones. La ontología de la mecánica bohmiana permite describir de manera natural sistemas cuánticos abiertos monitoreados continuamente con una descripción precisa de los estados condicionales para los regímenes Markoviano y no-Markoviano. Esto ayuda a proporcionar un enfoque alternativo al de la matriz de densidad en la descripción de sistemas cuánticos abiertos, que escala exponencialmente con el número de grados de libertad. Por lo tanto, se mostrará que la estrategia de estado condicionales de Bohm, que ha llevado al desarrollo de un simulador de transporte de electrones BITLLES, permite, por ejemplo, calcular los tiempos de permanencia de los electrones en una barrera de grafeno de dos terminales. Se demostrará también que las trayectorias bohmianas son muy apropiadas para proporcionar una descripción inequívoca de los tiempos de tránsito (de tunel) y su relación con las frecuencias de corte en dispositivos electrónicos. Finalmente, se discutirá un protocolo que incorpora mediciones de tipo colectivo para evadir la incertidumbre de medición actual en los dispositivos electrónicos de computación clásica y cuántica.
The work presented in this thesis is dedicated to the understanding of practical and conceptual challenges in simulating dynamical properties beyond the quasi-static approximation, in solid-state quantum devices in scenarios where a full quantum mechanical treatment is necessary. The results of this thesis are particularly relevant for the computation of the fluctuations of the electric current in the THz regime which aids in determining the correlations, the evaluation of tunnelling times that define the cut-off frequency of high-frequency operated devices, or the assessment of thermodynamic work to realize quantum thermal engines.The above mentioned dynamical properties involve multi-time measurements and hence are sensitive to quantum backaction. In the context of Orthodox quantum mechanics, the definition of these dynamical properties cannot be detached from the specification of the measurement apparatus. That is, defining apparatus-independent or intrinsic dynamical properties of quantum systems is incompatible with the postulates of Orthodox quantum mechanics. All in all, a device engineer like me, working on practical problems related with the present and future solid-state devices, is forced to delve into the foundations of quantum mechanics if I really want to properly understand the high-frequency performance of solid-state devices. In this regard, I will show that the difficulties associated to the understanding of dynamical properties can be solved by looking beyond Orthodox quantum mechanics. In particular, I have explored the modal interpretation of quantum mechanics, which is a mathematically precise quantum theory that reproduces all quantum mechanical phenomena. I will show that intrinsic properties can be easily defined in this new (non-orthodox) context. Importantly, I will prove that intrinsic properties can be identified with weak values and hence that they can be measured! Focused on a particular modal theory, viz., Bohmian mechanics, an electron transport simulator will be discussed and applied to address both methodological and practical issues related to the simulation of quantum electron transport. The ontology of Bohmian mechanics naturally enables describing continuously monitored open quantum systems with a precise description of the conditional states for Markovian and non-Markovian regimes. This helps to provide an alternate to density matrix approach in the description of open quantum systems, which scales poorly computationally with the number of degrees of freedom. Thus the Bohmian conditional state strategy, which has led to the development of an electron transport simulator, BITLLES will be shown to compute the dwell times for electrons in a two-terminal graphene barrier. It will be demonstrated that Bohmian trajectories are very appropriate to provide an unambiguous description of transit (tunnelling) times and its relation to the cut-off frequencies in practical electron devices. Finally, a protocol incorporating collective-like measurements to evade the current measurement uncertainty in the classical and quantum computing electron devices will be discussed.
Hutjens, Charles Michael. "Morphology Control for Model Block Copolymer/Nanoparticle Thin Film Nano-Electronic Devices on Conductive Substrates." University of Akron / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=akron1374496041.
Повний текст джерелаAdamska, Lyudmyla. "Theory and Modeling of Graphene and Single Molecule Devices." Scholar Commons, 2012. http://scholarcommons.usf.edu/etd/4272.
Повний текст джерелаBickham, Anna V. "Microfabricated Fluidic Devices for Biological Assays and Bioelectronics." BYU ScholarsArchive, 2020. https://scholarsarchive.byu.edu/etd/8470.
Повний текст джерелаReinke, Charles M. "Design, simulation, and characterization toolset for nano-scale photonic crystal devices." Diss., Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/33932.
Повний текст джерелаHui, Fei. "Chemical vapor deposition of hexagonal boron nitride and its use in electronic devices." Doctoral thesis, Universitat de Barcelona, 2018. http://hdl.handle.net/10803/663391.
Повний текст джерелаLos dieléctricos son materiales aislantes utilizados en muchos dispositivos electrónicos (por ejemplo condensadores, transistores, baristores), en los que juegan un papel muy importante. En realidad, el dieléctrico es probablemente la parte más crítica en la gran mayoría de dispositivos electrónicos, ya que casi siempre está expuesto a campos eléctricos que pueden degradar sus prestaciones. El dióxido de silicio (SiO2) ha sido el material aislante tradicionalmente utilizado en la industria; sin embargo la miniaturización de los dispositivos requirió una reducción del grosor de los dieléctricos SiO2, lo que provocó un incremento dramático de la corriente de fugas y el fallo del dispositivo entero. Actualmente los dispositivos electrónicos más avanzados utilizan materiales aislantes con una constante dieléctrica alta (por ejemplo HfO2, Al2O3 y TiO2), y así no es necesario reducir tanto su grosor, lo que mantiene una baja corriente de fugas. Sin embargo, estos materiales muestran muchos problemas intrínsecos, y también una mala interacción con materiales adyacentes. Por lo tanto, la carrera para encontrar un material dieléctrico ideal para dispositivos electrónicos sigue abierta. En este contexto, los materiales bidimensionales se han convertido en una seria opción, no sólo por sus excelentes propiedades, sino también gracias al desarrollo de nuevos métodos de síntesis escalables. En esta tesis doctoral he investigado el uso de nitruro de boro hexagonal (h-BN), monocapa y multicapa, como material dieléctrico en dispositivos electrónicos, ya su banda de energías prohibidas es de ~5.9 eV. Mi trabajo se ha focalizado en la síntesis de h-BN mediante el método chemical vapor deposition, el estudio de sus propiedades morfológicas y eléctricas a escala nanométrica, y sus prestaciones como dieléctrico en diferentes dispositivos (condensadores y memristores). Nuestros experimentos indican que h-BN es un material dieléctrico muy fiable, y que es apto para su uso en dispositivos. Sus prestaciones dependen de diferentes parámetros, como el sustrato en el que ha sido crecido, su grosor, y los materiales usados como electrodos adyacentes. Además, h-BN muestra propiedades adicionales nunca observadas en dieléctricos tradicionales, como modulación de la resistividad volátil, lo que podría extender su uso a nuevas aplicaciones.
Hagerty, Phillip. "Physical Vapor Deposition of Materials for Flexible Two Dimensional Electronic Devices." University of Dayton / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1460739765.
Повний текст джерелаТкач, Олена Петрівна, Елена Петровна Ткач, Olena Petrivna Tkach, Є. І. Сухін, Катерина Сергіївна Однодворець, Екатерина Сергеевна Однодворец та Kateryna Serhiivna Odnodvorets. "Акустоелектронний сенсор фізичних величин на поверхневих акустичних хвилях". Thesis, Сумський державний університет, 2018. http://essuir.sumdu.edu.ua/handle/123456789/67906.
Повний текст джерелаArjmandi-Tash, Hadi. "Graphene based mechanical and electronic devices in optimized environments : from suspended graphene to in-situ grown graphene/boron nitride heterostructures." Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENY043/document.
Повний текст джерелаCharge carriers in graphene form stable two-dimensional gases which are fully exposed to the environment. As a consequence, the electrical performance of graphene is strongly affected by surface charged impurities as well as topographic perturbations inherited from the underlying substrate.This thesis addresses several methods to circumvent that issue.The first method consists in embedding graphene in an optimized environment by depositing graphene onto some neutral and crystalline material. Novel 2D insulating materials such as hexagonal boron nitride buffer layer (BN) appears as ideal substrates to get rid of detrimental effect of interfacial charges and corrugation. Several fabrication schemes of Graphene/BN stacks are shown including some direct in-situ growth of graphene on BN crystal using an innovative proximity-driven chemical vapour growth based on BN exfoliation on copper. In order to explore the effects of the improved substrate on the transport properties of graphene, we have performed low temperature magneto-transport studies on these stacks. We present a direct comparison of weak localization signals with those acquired on a graphene/silica reference device. A clear increase of the coherence length is shown on Graphene/BN stacks together with improved electronic mobility and charge neutrality.Removing the substrate and suspending graphene is another approach for optimization of the graphene environment which forms the second topic covered in this thesis. After introducing an improved recipe for preserving the quality of graphene throughout an elaborate fabrication process, we probe the room- and low-temperature performance of the nano-electro-mechanical devices based on doubly clamped suspended graphene ribbons. The obtained data are used for characterizing the thermal expansion of CVD graphene
Ruess, Frank Joachim Physics Faculty of Science UNSW. "Atomically controlled device fabrication using STM." Awarded by:University of New South Wales. Physics, 2006. http://handle.unsw.edu.au/1959.4/24855.
Повний текст джерелаKaouache, Abdelhakim. "Défiabilisation des composants nanoélectroniques par des éléments radioactifs naturels." Thesis, Montpellier 2, 2014. http://www.theses.fr/2014MON20166/document.
Повний текст джерелаThe increasing miniaturisation of MOS transistors has made RAM memories more and more sensitive to alpha particles emitted by radioactive elements naturally present in the materials used for memory fabrication. Indeed, at ground level, the soft error rate triggered by these particles is comparable to that triggered by neutrons from cosmic rays. The main purpose of this work aims to develop methods to evaluate this rate allowing thereafter suggesting technologies mitigations. Thus, in the context of a theoretical approach, we have developed models to estimate soft errors rate triggered by uranium and thorium chains in secular equilibrium but also disequilibrium state. This requires identification of critical radionuclides those are able to increase the emissivity (and thus the soft error rate) to unacceptable levels during device lifetime. Taking into account disequilibrium state of decay chains in theoretical study provides a realistic approach to the contamination. We have also proposed an experimental method to analyze the radioactive state evolution in materials used for memory fabrication. In this experimental approach, we have combined three complementary measurement techniques: alpha spectroscopy, gamma spectroscopy and ICPMS
Ponsot, Amanda Eileen. "SYNTHESIS OF TETRABENZO[18]CYCLYNE CROSS-CONJUGATED MACROCYCLES WITH FOCUS ON THE DONOR-ACCEPTOR INDUCED FUNCTIONALITY." Miami University / OhioLINK, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=miami1280887889.
Повний текст джерелаSingh, Nagendra Pratap. "Growth And Characterization of ZnO Nanostructures for Device Applications : Field Emission, Memristor And Gas Sensors." Thesis, 2016. http://etd.iisc.ernet.in/handle/2005/2748.
Повний текст джерелаYu, Jaeeun. "New Layered Materials and Functional Nanoelectronic Devices." Thesis, 2018. https://doi.org/10.7916/D8X92PW6.
Повний текст джерелаChuan-YuLin and 林傳宇. "Transient Quantum Transport Theory in Nanoelectronic Devices." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/80807482008258400748.
Повний текст джерела國立成功大學
物理學系碩博士班
100
In this thesis, a transient quantum transport theory incorporated with initial correlations is developed to study the transport dynamic in nanoelectronic system. It extends the quantum transport theory based on the Feynman-Vernon influence functional approach and the Keldysh nonequilibirum Green function technique to an arbitrary initial state. The nanoelectronic devices concerned in this thesis consist of the central island coupled to the source and the drain. The time-convolutionless exact master equation which incorporates with the correlations is also derived, where the back-reactions between the island and the reservoirs are fully taken into account. By using the quantum dot system coupled to two leads as an example, the transport dynamics incorporated with initial correlations is discussed. Moreover, The fluctuating current-current correlations and the noise spectrum are obtained to understand the intrinsic characteristic and structure of the nanoelectronic devices. At last, the transient quantum transport is applied to study the time-dependent transport phenomena such as the photon-assisted transport and single-electron pumpings and turnstile operations in nanoelectronic devices.
Lin, Jian-Hong, and 林建宏. "A Study of Silicon Nanoelectronics Devices." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/49usvj.
Повний текст джерелаRobinson, Stephen John. "Fabrication and transport properties of silicon nanoelectronic devices /." 2007. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3290362.
Повний текст джерелаSource: Dissertation Abstracts International, Volume: 68-11, Section: B, page: 7560. Adviser: John Tucker. Includes bibliographical references (leaves 118-128) Available on microfilm from Pro Quest Information and Learning.
Lin, Xiaohui active 21st century. "Novel printing technologies for nanophotonic and nanoelectronic devices." Thesis, 2013. http://hdl.handle.net/2152/26609.
Повний текст джерелаtext
Standley, Brian Lawrence. "Graphene as a Platform for Novel Nanoelectronic Devices." Thesis, 2012. https://thesis.library.caltech.edu/7138/4/standley_thesis.pdf.
Повний текст джерелаGraphene's superlative electrical and mechanical properties, combined with its compatibility with existing planar silicon-based technology, make it an attractive platform for novel nanoelectronic devices. The development of two such devices is reported—a nonvolatile memory element exploiting the nanoscale graphene edge and a field-effect transistor using graphene for both the conducting channel and, in oxidized form, the gate dielectric. These experiments were enabled by custom software written to fully utilize both instrument-based and computer-based data acquisition hardware and provide a simple measurement automation system.
Graphene break junctions were studied and found to exhibit switching behavior in response to an electric field. This switching allows the devices to act as nonvolatile memory elements which have demonstrated thousands of writing cycles and long retention times. A model for device operation is proposed based on the formation and breaking of carbon-atom chains that bridge the junctions. Information storage was demonstrated using the concept of rank coding, in which information is stored in the relative conductance of multiple graphene switches in a memory cell.
The high mobility and two dimensional nature of graphene make it an attractive material for field-effect transistors. Another ultrathin layered material—graphene's insulating analogue, graphite oxide—was studied as an alternative to bulk gate dielectric materials such as Al2O3 or HfO2. Transistors were fabricated comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. Electron transport measurements reveal minimal leakage through the graphite oxide at room temperature. Its breakdown electric field was found to be comparable to SiO2, typically 1–3 × 108 V/m, while its dielectric constant is slightly higher, κ ≈ 4.3.
As nanoelectronics experiments and their associated instrumentation continue to grow in complexity the need for powerful data acquisition software has only increased. This role has traditionally been filled by semiconductor parameter analyzers or desktop computers running LabVIEW. Mezurit 2 represents a hybrid approach, providing basic virtual instruments which can be controlled in concert through a comprehensive scripting interface. Each virtual instrument's model of operation is described and an architectural overview is provided.
Chen, Yingduo. "Patterned single-walled carbon nanotube networks for nanoelectronic devices." Thesis, 2014. http://hdl.handle.net/1828/5659.
Повний текст джерелаGraduate
0544
Cutright, James B. "Analysis of electron transport through novel nanoelectronic and spintronic devices." 2012. http://liblink.bsu.edu/uhtbin/catkey/1675900.
Повний текст джерелаMethods of analysis -- The Aharonov-Bohm ring -- The quantum dot spin-polarizer.
Department of Physics and Astronomy
Baron, Corey Allan. "Terahertz spinplasmonic devices." Master's thesis, 2009. http://hdl.handle.net/10048/575.
Повний текст джерелаTitle from pdf file main screen (viewed on Sept 22, 2009). "A thesis submitted to the Faculty of Graduate Studies and Research in partial fulfillment of the requirements for the degree of Master of Science, Department of Electrical and Computer Engineering, University of Alberta." Includes bibliographical references.