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Статті в журналах з теми "Nano-Crystalline Silicon"

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Автор: Grafiati

Опубліковано: 7 вересня 2023

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1

Liu, Xiangna, and Yuliang He. "Photoabsorption Spectra of Nano-Crystalline Silicon Films." Chinese Physics Letters 10, no. 12 (December 1993): 752–55. http://dx.doi.org/10.1088/0256-307x/10/12/014.

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2

Niu, Junjie, Jian Sha, Xiangyang Ma, Jin Xu, and Deren Yang. "Array-orderly single crystalline silicon nano-wires." Chemical Physics Letters 367, no. 5-6 (January 2003): 528–32. http://dx.doi.org/10.1016/s0009-2614(02)01731-1.

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3

Arendse, Christopher J., Theophillus F. G. Muller, Franscious R. Cummings, and Clive J. Oliphant. "Oxidation Reduction in Nanocrystalline Silicon Grown by Hydrogen-Profiling Technique." Journal of Nano Research 41 (May 2016): 9–17. http://dx.doi.org/10.4028/www.scientific.net/jnanor.41.9.

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Анотація:

The deposition of a compact amorphous silicon/nano-crystalline silicon material is demonstrated by hot-wire chemical vapour deposition using a sequential hydrogen profiling technique at low hydrogen dilutions. Nano-crystallite nucleation occurs at the substrate interface that develops into a uniform, porous crystalline structure as the growth progresses. A further reduction in the H-dilution results in the onset of a dense amorphous silicon layer. The average crystalline volume fraction and nano-crystallite size in the sample bulk amounts to 30% and 6 nm, respectively, as probed by Raman spectroscopy using the 647 nm excitation. The change in hydrogen dilution is accompanied by a graded hydrogen concentration depth-profile, where the hydrogen concentration decreases as the growth progresses. The level of post-deposition oxidation is considerably reduced, as inferred from infrared spectroscopy. The presence of oxygen is mainly confined to the substrate interface as a result of thermal oxidation during thin film growth.

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4

Yang, Xiao Jing, and Wei Xing Zhang. "The Research of Nano-Mechanical Properties of Mono-Crystalline Silicon." Advanced Materials Research 834-836 (October 2013): 18–22. http://dx.doi.org/10.4028/www.scientific.net/amr.834-836.18.

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The research of the nano-mechanical properties on mono-crystalline silicon by nanoindention technology is reported in this paper . Using the calculation method given by Oliver and Pharr, the hardness and the elastic modulus of mono-crystalline silicon are gained from the load-penetration depth curve. The simulation on mono-crystalline silicon in the plastic phase is carried out by ABAQUS. Based on the bilinear constitutive law and approximate relationship between the hardness and the yield strength, the obtained load-penetration depth curve through the finite element method is compared with the materials actual load-penetration depth curve and good correlation is achieved.

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5

Sharma, Mansi, Deepika Chaudhary, S. Sudhakar, Preetam Singh, K. M. K. Srivatsa, and Sushil Kumar. "Spectroscopic identification of ultranano-crystalline phases within amorphous/nano-crystalline silicon." Advanced Materials Letters 8, no. 2 (December 28, 2016): 163–69. http://dx.doi.org/10.5185/amlett.2017.6451.

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6

LIU MING, HE YU-LIANG, JIANG XING-LIU, LI GUO-HUA, and HAN HE-XIANG. "PHOTOLUMINESCENCE STUDY ON HYDROGENATED NANO-CRYSTALLINE SILICON FILM." Acta Physica Sinica 47, no. 5 (1998): 864. http://dx.doi.org/10.7498/aps.47.864.

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7

Wen-guo, Tang, Gong Tao, Li Zi-yuan, Liu Xiang-na, and He Yu-liang. "Photoluminescence properties of nano-size crystalline silicon films." Acta Physica Sinica (Overseas Edition) 2, no. 10 (October 1993): 776–81. http://dx.doi.org/10.1088/1004-423x/2/10/008.

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8

Zhaoyuan, Y. "Laser synthesis of nano-crystalline silicon carbide powder." Metal Powder Report 57, no. 4 (April 2002): 38. http://dx.doi.org/10.1016/s0026-0657(02)80109-6.

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9

Pan, B. C., and R. Biswas. "Simulation of hydrogen evolution from nano-crystalline silicon." Journal of Non-Crystalline Solids 333, no. 1 (January 2004): 44–47. http://dx.doi.org/10.1016/j.jnoncrysol.2003.09.058.

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10

Dimitrov, Dimitre Z., and Chen-Hsun Du. "Crystalline silicon solar cells with micro/nano texture." Applied Surface Science 266 (February 2013): 1–4. http://dx.doi.org/10.1016/j.apsusc.2012.10.081.

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11

Tamir, S., and S. Berger. "Electroluminescence and electrical properties of nano-crystalline silicon." Materials Science and Engineering: B 69-70 (January 2000): 479–83. http://dx.doi.org/10.1016/s0921-5107(99)00409-2.

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12

Pozdnyakov, George A., Vladimir N. Yakovlev, and Anatoly I. Saprykin. "Fabrication of Nano-Sized Silicon Powder by Adiabatic Compression." Solid State Phenomena 213 (March 2014): 80–85. http://dx.doi.org/10.4028/www.scientific.net/ssp.213.80.

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Анотація:

The article describes a new method for nano-sized silicon powder fabrication. The method is based on monosilane thermal decomposition at the adiabatic compression. Homogeneous conditions of chemical transformation ensure a high product purity and monodispersity. Both amorphous and crystalline silicon powders were obtained in the experiments.

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13

Yamamoto, Naokatsu, Kouichi Akahane, Tetsuya Kawanishi, and Hideyuki Sotobayashi. "Nano-crystalline Sb-based compound semiconductor formed on silicon." Journal of Crystal Growth 323, no. 1 (May 2011): 431–33. http://dx.doi.org/10.1016/j.jcrysgro.2010.12.009.

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14

Acosta, E., N. M. Wight, V. Smirnov, J. Buckman, and N. S. Bennett. "Hydrogenated Nano-/Micro-Crystalline Silicon Thin-Films for Thermoelectrics." Journal of Electronic Materials 47, no. 6 (November 30, 2017): 3077–84. http://dx.doi.org/10.1007/s11664-017-5977-8.

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15

HONDA, Tomomi, Nobuhiro TANAKA, and Yoshiro IWAI. "Wear properties of singl crystalline silicon in nano-scale." Proceedings of the Machine Design and Tribology Division meeting in JSME 2004.4 (2004): 139–40. http://dx.doi.org/10.1299/jsmemdt.2004.4.139.

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16

Wang, L. C., D. Feng, Q. Li, Y. L. He, and Y. M. Chu. "Microstructures and characteristics of nano-size crystalline silicon films." Journal of Physics: Condensed Matter 4, no. 40 (October 5, 1992): L509—L512. http://dx.doi.org/10.1088/0953-8984/4/40/001.

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17

PARK, JAEHONG, KIDONG PARK, SEUNGJOON PAIK, KYO-IN KOO, BYOUNG-DOO CHOI, JONGPAL KIM, SANGJUN PARK, IL-WOO JUNG, HYOUNGHO KO, and DONG-IL (DAN) CHO. "EXTREMELY SHARP {111}-BOUND, SINGLE-CRYSTALLINE SILICON NANO TIPS." International Journal of Computational Engineering Science 04, no. 02 (June 2003): 327–30. http://dx.doi.org/10.1142/s1465876303001198.

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18

Gracin, D., A. Gajović, K. Juraić, M. Čeh, Z. Remeš, A. Poruba, and M. Vaněček. "Spectral response of amorphous–nano-crystalline silicon thin films." Journal of Non-Crystalline Solids 354, no. 19-25 (May 2008): 2286–90. http://dx.doi.org/10.1016/j.jnoncrysol.2007.10.076.

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19

Toliopoulos, Dimosthenis, Alexey Fedorov, Sergio Bietti, Monica Bollani, Emiliano Bonera, Andrea Ballabio, Giovanni Isella, et al. "Solid-State Dewetting Dynamics of Amorphous Ge Thin Films on Silicon Dioxide Substrates." Nanomaterials 10, no. 12 (December 17, 2020): 2542. http://dx.doi.org/10.3390/nano10122542.

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We report on the dewetting process, in a high vacuum environment, of amorphous Ge thin films on SiO2/Si (001). A detailed insight of the dewetting is obtained by in situ reflection high-energy electron diffraction and ex situ scanning electron microscopy. These characterizations show that the amorphous Ge films dewet into Ge crystalline nano-islands with dynamics dominated by crystallization of the amorphous material into crystalline nano-seeds and material transport at Ge islands. Surface energy minimization determines the dewetting process of crystalline Ge and controls the final stages of the process. At very high temperatures, coarsening of the island size distribution is observed.

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20

KIEBACH, RAGNAR, ZHENRUI YU, MARIANO ACEVES-MIJARES, DONGCAI BIAN, and JINHUI DU. "THE DEPOSITION AND CONTROL OF SELF ASSEMBLED SILICON NANO ISLANDS ON CRYSTALLINE SILICON." International Journal of High Speed Electronics and Systems 18, no. 04 (December 2008): 901–10. http://dx.doi.org/10.1142/s0129156408005862.

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The formation of nano sized Si structures during the annealing of silicon rich oxide (SRO) films was investigated. These films were synthesized by low pressure chemical vapor deposition (LPCVD) and used as precursors, a post-deposition thermal annealing leads to the formation of Si nano crystals in the SiO 2 matrix and Si nano islands ( Si nI ) at c-Si /SRO interface. The influences of the excess Si concentration, the incorporation of N in the SRO precursors, and the presence of a Si concentration gradient on the Si nI formation were studied. Additionally the influence of pre-deposition substrate surface treatments on the island formation was investigated. Therefore, the substrate surface was mechanical scratched, producing high density of net-like scratches on the surface. Scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) were used to characterize the synthesized nano islands. Results show that above mentioned parameters have significant influences on the Si nIs . High density nanosized Si islands can epitaxially grow from the c-Si substrate. The reported method is very simple and completely compatible with Si integrated circuit technology.

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21

Verdier, M., K. Termentzidis, and D. Lacroix. "Crystalline-amorphous silicon nano-composites: Nano-pores and nano-inclusions impact on the thermal conductivity." Journal of Applied Physics 119, no. 17 (May 7, 2016): 175104. http://dx.doi.org/10.1063/1.4948337.

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22

Wei, Xin, Zhuo Chen, Xiao Zhu Xie, and Qing Lei Ren. "Experimental Study on Micro-Nano Scratching of Mono-Crystalline Silicon Wafer." Advanced Materials Research 135 (October 2010): 458–61. http://dx.doi.org/10.4028/www.scientific.net/amr.135.458.

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In this paper, micro-nano scratching experiments were conducted on mono-crystalline silicon wafer to investigate the material removal mechanism of silicon. Two loading methods (increasing-loading and constant-loading) were used. The characteristics of the scratching grooves, and the relationship between the groove size and the load were analyzed by observing the surface torography and measuring the groove. The results show that there are four distinct regimes existed with an increasing scratching load: elastic regime, ductile regime, ductile-brittle regime and brittle regime. The critical load of the transition from ductile to ductile-brittle regime can be considered as 120mN, within which smooth scratching surfaces have been obtained by ductile removal. The scratching load has very significant effects on the groove sizes of the mono-crystal silicon.

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23

Abed, M. A., M. M. Uonis, G. G. Ali, and I. B. Karomi. "Deposition and characterization of carbon nanotubes on porous silicon by PECVD." Digest Journal of Nanomaterials and Biostructures 18, no. 1 (February 20, 2023): 235–41. http://dx.doi.org/10.15251/djnb.2023.181.235.

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Nano porous silicon was achieved by electrochemical etching technique of current density 20 mA/cm 2 , 25% HF and etching time 15min. Carbon Nano layers have been deposited on PSi substrate by PECVD. XRD spectrum show that porous silicon has crystalline phase and becomes very broad after etching time, in addition, XRD spectrum for carbon layers show several peaks between (2θ=28.25-28.75) which belong to carbon nanotube and these peaks intensity increases with increasing of carbon thickness. Raman spectrum illustrates that peak position was at 516.32nm for porous silicon prepared at etching time 15 min.

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24

Yang, Guoyong, Yunxiang Lu, Bo Wang, Yue Xia, Huanyi Chen, Hui Song, Jian Yi, Lifen Deng, Yuezhong Wang, and He Li. "Chemical Vapor Deposition of <110> Textured Diamond Film through Pre-Seeding by Diamond Nano-Sheets." Materials 15, no. 21 (November 4, 2022): 7776. http://dx.doi.org/10.3390/ma15217776.

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Diamond films prepared by chemical vapor deposition will exhibit different surface morphologies, which are determined by the texture and the structural perfection of the deposited diamond. In general, its surface morphology can be controlled by adjusting the deposition conditions. In the present work, <110> textured diamond film was deposited on single crystalline silicon through pre-seeding by diamond nanosheets, rather than controlling the deposition conditions. The employed diamond nano-sheets were prepared by cleavage along a plane, exhibiting good crystallinity. Before chemical vapor deposition, the as-prepared diamond nano-sheets were pre-seeded on the surface of single crystalline silicon as nucleation sites for diamond growth. SEM and XRD results show that the prepared diamond films have a <110> texture. FIB observation reveals that diamonds homogeneously grow on the pre-seeded diamond nano-sheets during chemical vapor deposition, achieving the diamond film with <110> texture. Our work provides a new strategy to prepare <110> textured diamond film.

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25

Kaspar, Jan, Magdalena Graczyk-Zajac, Stefan Lauterbach, Hans-Joachim Kleebe, and Ralf Riedel. "Silicon oxycarbide/nano-silicon composite anodes for Li-ion batteries: Considerable influence of nano-crystalline vs. nano-amorphous silicon embedment on the electrochemical properties." Journal of Power Sources 269 (December 2014): 164–72. http://dx.doi.org/10.1016/j.jpowsour.2014.06.089.

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26

Koshida, N. "(Invited) Electronic and Acoustic Applications of Anodized Nano-Crystalline Silicon." ECS Transactions 69, no. 2 (October 2, 2015): 111–16. http://dx.doi.org/10.1149/06902.0111ecst.

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27

Branicio, Paulo S., Jingyun Zhang, José P. Rino, Aiichiro Nakano, Rajiv K. Kalia, and Priya Vashishta. "Plane shock loading on mono- and nano-crystalline silicon carbide." Applied Physics Letters 112, no. 11 (March 12, 2018): 111909. http://dx.doi.org/10.1063/1.5025583.

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28

Wang, Shaoliang, Zheng Xu, Xianfang Gou, Xixi Huang, and Su Zhou. "Study of Nano Texturing on Multi-crystalline Silicon Solar Cells." IOP Conference Series: Earth and Environmental Science 453 (April 10, 2020): 012078. http://dx.doi.org/10.1088/1755-1315/453/1/012078.

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29

Khan, H. R., and H. Frey. "Ion beam deposition of crystallographically aligned nano-crystalline silicon films." Surface and Coatings Technology 81, no. 2-3 (June 1996): 307–11. http://dx.doi.org/10.1016/0257-8972(95)02490-5.

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30

Cantley, K. D., A. Subramaniam, H. J. Stiegler, R. A. Chapman, and E. M. Vogel. "Neural Learning Circuits Utilizing Nano-Crystalline Silicon Transistors and Memristors." IEEE Transactions on Neural Networks and Learning Systems 23, no. 4 (April 2012): 565–73. http://dx.doi.org/10.1109/tnnls.2012.2184801.

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31

Hadi, Hasan A. "An Effect Etching Time on Structure Properties of Nano-Crystalline p-Type Silicon." International Letters of Chemistry, Physics and Astronomy 36 (July 2014): 327–33. http://dx.doi.org/10.18052/www.scipress.com/ilcpa.36.327.

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Анотація:

This paper reports the influence of the etching time on structural characteristics of porous silicon manufactured by electrochemical etching (ECE) anodization p-type silicon wafers. Micro and nano-structural features of the samples are mainly investigated by XRD and AFM techniques. The morphological properties of PS layer such as nano-crystalline size, the structure aspect of PS layer and lattice constant have been investigated. Nanocrystals size (grain size) computing from XRD data (145 to 85) nm is resulting the increasing etching time.AFM investigations reveal increase in (RMS) roughness, Sz.(Ten Point height) and average diameter of the porous structure with increase in etching time.

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32

Hadi, Hasan A. "An Effect Etching Time on Structure Properties of Nano-Crystalline p-Type Silicon." International Letters of Chemistry, Physics and Astronomy 36 (July 15, 2014): 327–33. http://dx.doi.org/10.56431/p-j67cx3.

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Анотація:

This paper reports the influence of the etching time on structural characteristics of porous silicon manufactured by electrochemical etching (ECE) anodization p-type silicon wafers. Micro and nano-structural features of the samples are mainly investigated by XRD and AFM techniques. The morphological properties of PS layer such as nano-crystalline size, the structure aspect of PS layer and lattice constant have been investigated. Nanocrystals size (grain size) computing from XRD data (145 to 85) nm is resulting the increasing etching time.AFM investigations reveal increase in (RMS) roughness, Sz.(Ten Point height) and average diameter of the porous structure with increase in etching time.

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33

Lukša, Algimantas, Virginijus Bukauskas, Viktorija Nargelienė, Marius Treideris, Martynas Talaikis, Algirdas Selskis, Artūras Suchodolskis, and Arūnas Šetkus. "Influence of Growth Time and Temperature on Optical Characteristics and Surface Wetting in Nano-Crystalline Graphene Deposited by PECVD Directly on Silicon Dioxide." Crystals 13, no. 8 (August 11, 2023): 1243. http://dx.doi.org/10.3390/cryst13081243.

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Unique electronic properties of graphene offer highly interesting ways to manipulate the functional properties of surfaces and develop novel structures which are sensitive to physical and chemical interactions. Nano-crystalline graphene is frequently preferable to crystalline monolayer in detecting devices. In this work, nano-crystalline graphene layers were synthesized directly on SiO2/Si substrates by plasma-enhanced chemical vapour deposition (PECVD). The influence of the deposition time and temperature on the characteristics of the structures were studied. The optical properties and evaporation kinetics of pure water droplets were analysed, along with arrangement and composition of the grown layers. The nano-crystalline graphene layers grown at 500 °C were characterised by the refraction index 2.75 ± 0.35 and the normalised excess Gibbs free energy density 0.85/γwater 10−4 m, both being similar to those of the monolayer graphene. The changes in the refraction index and the excess Gibbs free energy were related to the parameters of the Raman spectra and a correlation with the technological variables were disclosed.

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34

Najafov, BA, FP Abasov, and RS Ibragimov. "Obtaining Thin Films of Silicon-Carbon Method of Reactive Magnetron Sputtering are used as Solar Cells." Journal of Nanosciences Research & Reports 3, no. 2 (June 30, 2021): 1–7. http://dx.doi.org/10.47363/jnsrr/2021(3)121.

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Анотація:

In the work of the various parameters studied film amorphous and nano-crystalline alloy silicon-carbon (а-nc-Si1-xCx :H (x=0÷1)) doped with phosphorus (PH3 ) and boron (B2 H6 ). Studied the properties of these films on different substrates derived from quartz, glass and Silicon-coated Fe, Al, Pd, Ni, Ti, Ag. Using transmission electron microscopy (TEM) studied the morphology obtained nano tubes. Also examine the structural properties of films by using infrared spectroscopy and x-ray diffraction of x-rays. Created by cascade solar cells area S = 1.2 cm2 and have a coefficient of 11.2%.

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35

KUMAR, P., F. ZHU, and A. MADAN. "Electrical and structural properties of nano-crystalline silicon intrinsic layers for nano-crystalline silicon solar cells prepared by very high frequency plasma chemical vapor deposition." International Journal of Hydrogen Energy 33, no. 14 (July 2008): 3938–44. http://dx.doi.org/10.1016/j.ijhydene.2008.02.037.

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36

Darbari, S., M. Shahmohammadi, M. Mortazavi, S. Mohajerzadeh, Y. Abdi, M. Robertson, and T. Morrison. "High performance multilayered nano-crystalline silicon/silicon-oxide light-emitting diodes on glass substrates." Nanotechnology 22, no. 37 (August 23, 2011): 375204. http://dx.doi.org/10.1088/0957-4484/22/37/375204.

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37

Zhu, Feng, Jian Hu, Ilvydas Matulionis, Josh Gallon, and Arun Madan. "Nano-Crystalline Si Based Alloy (nc-SiXY) with Band Gap of 1.5 eV as the Solar Cell Absorber Layer Fabricated by VHF-PECVD Technique." MRS Proceedings 1426 (2012): 87–92. http://dx.doi.org/10.1557/opl.2012.932.

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ABSTRACTWe describe the properties of nano-crystalline silicon based alloy (nc-SiXY) prepared by a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) technique with silane (SiH4) and XY gas mixtures and diluted in hydrogen (H2) at low deposition temperature. Varying the gas ratio among SiH4, H2 and XY gasses could alter the optical bandgap and structure. The nc-Si films with high crystalline volume fraction were first prepared, and then the XY gasses were added in order to tune the microstructure and opto-electronic properties of this nano-crystalline silicon based alloy. We have characterized the materials using UV-VIS-NIR, Raman, Constant Photocurrent Method (CPM), dark- and photo-conductivity. As XY gas flows were increased, the optical bandgap of nc-SiXY films increased, while its crystalline volume fraction and conductivity decreased. With proper control of the silane concentration, XY/SiH4 gas ratio, and deposition pressure, we have fabricated the nc-SiXY film with optical bangap of about 1.5eV. Applying this material as the absorber layer in p-i-n devices with configuration of textured ZnO/nc-p+/nc-SiXY/a-n+/Ag, the efficiency is 7.25% (Voc=0.616V, Jsc=17.69mA/cm2, FF= 0.666) with thickness of ∼0.8μm.

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38

Fangsuwannarak, Thipwan, K. Amonsurintawong, and Suwat Sopitpan. "Aluminum-Induced Crystallization of p⁺ Silicon Pinholes for the Formation of Rear Passivation Contact in Solar Cell." Key Engineering Materials 547 (April 2013): 31–40. http://dx.doi.org/10.4028/www.scientific.net/kem.547.31.

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Анотація:

Formation of nano-crystalline p+ silicon (Si) in pinholes through a silicon dioxide layer was achieved by pinning of aluminum through the thin silicon dioxide (SiO2) layer. In addition to opening holes of SiO2 layer by aluminum (Al) pining, amorphous silicon (a-Si) was subsequent deposited on the Al layer and another heated at low temperature (500°C) to allow solid- phase epitaxial growth of p+ Si in the pinholes due to the Al induced layer exchange process. The poly-crystalline p+ Si obtains lower effective surface recombination than the Al back surface field (BSF). The technique demonstrated to result in ohmic contacts with low contact resistance. The evaluation of Al-induced crystallization of a-Si in a-Si/Al bilayer was studied by X-ray diffraction. In this paper, the influence of a-Si/Al thickness ratio on the specific conductivity value and crystalline grain size of the p+ Si thin film is discussed. The obtained results are helpful for a further design of the rear passivation contact in solar cell.

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39

Sato, T., S. Kitamura, T. Sueyoshl, M. Iwatukl, and C. Nielsen. "UHV-STM studies of silicon nano-pyramid growth on silicon surface at high temperature." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (August 1992): 1144–45. http://dx.doi.org/10.1017/s0424820100130353.

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Recently, the growth process and relaxation process of crystalline structures were studied by observing a SI nano-pyramid which was built on a Si surface with a UHV-STM. A UHV-STM (JEOL JSTM-4000×V) was used for studying a heated specimen, and the specimen was kept at high temperature during observation. In this study, the nano-fabrication technique utilizing the electromigration effect between the STM tip and the specimen was applied. We observed Si atoms migrated towords the tip on a high temperature Si surface.Clean surfaces of Si(lll)7×7 and Si(001)2×l were prepared In the UHV-STM at a temperature of approximately 600 °C. A Si nano-pyramid was built on the Si surface at a tunneling current of l0nA and a specimen bias voltage of approximately 0V in both polarities. During the formation of the pyramid, Images could not be observed because the tip was stopped on the sample. After the formation was completed, the pyramid Image was observed with the same tip. After Imaging was started again, the relaxation process of the pyramid started due to thermal effect.

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40

LIU XIANG-NA, HE YU-LIANG, F. WANG, and R. SCHWARZ. "A STUDY OF OPTICAL ABSORPTION SPECTRA OF NANO-CRYSTALLINE SILICON FILMS." Acta Physica Sinica 42, no. 12 (1993): 1979. http://dx.doi.org/10.7498/aps.42.1979.

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LIU MING, WANG ZI-OU, XI ZHONG-HE, and HE YU-LIANG. "FABRICATION AND STUDY OF PHOSPHOR DOPED HYDROGENATED NANO-CRYSTALLINE SILICON FILM." Acta Physica Sinica 49, no. 5 (2000): 983. http://dx.doi.org/10.7498/aps.49.983.

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He), Yuliang He (Y L., Yiming Chu (Y M. Chu), Hongyi Lin (H Y. Lin), and Shusheng Jiang (S S. Jiang). "Microstructure and Electron Conduction Mechanism of Hydrogenated Nano-crystalline Silicon Films." Chinese Physics Letters 10, no. 9 (September 1993): 539–42. http://dx.doi.org/10.1088/0256-307x/10/9/008.

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43

Ezdin, B. S., V. V. Kalyada, A. V. Ischenko, A. E. Zarvin, and D. A. Yatsenko. "Production of nano-dimensional crystalline silicon on fast cyclic compression setup." Journal of Physics: Conference Series 1105 (November 2018): 012136. http://dx.doi.org/10.1088/1742-6596/1105/1/012136.

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44

Lin, Xuan-ying, Kui-xun Lin, Ruo-he Yao, Wang-zhou Shi, Mei-ya Li, Chu-ying Yu, Yun-peng Yu, Hou-yun Liang, and Yan-ping Xu. "Luminescent Properties of Nano-crystalline Silicon Films Embedded in SiO 2." Chinese Physics Letters 16, no. 9 (September 1, 1999): 670–71. http://dx.doi.org/10.1088/0256-307x/16/9/018.

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Datta, M. S., A. K. Bandyopadhyay та B. Chaudhuri. "Sintering of nano crystalline α silicon carbide doping with aluminium nitride". Bulletin of Materials Science 25, № 2 (квітень 2002): 121–25. http://dx.doi.org/10.1007/bf02706231.

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46

Gelloz, B., H. Sano, R. Boukherroub, D. D. M. Wayner, D. J. Lockwood, and N. Koshida. "Stable electroluminescence from passivated nano-crystalline porous silicon using undecylenic acid." physica status solidi (c) 2, no. 9 (June 2005): 3273–77. http://dx.doi.org/10.1002/pssc.200461142.

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47

Marins, E., V. Guduru, M. Ribeiro, F. Cerqueira, A. Bouattour, and P. Alpuim. "High-rate deposition of nano-crystalline silicon thin films on plastics." physica status solidi (c) 8, no. 3 (January 13, 2011): 846–49. http://dx.doi.org/10.1002/pssc.201000288.

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Beekman, Matt, Susan Kauzlarich, Luke Doherty, and George Nolas. "Zintl Phases as Reactive Precursors for Synthesis of Novel Silicon and Germanium-Based Materials." Materials 12, no. 7 (April 8, 2019): 1139. http://dx.doi.org/10.3390/ma12071139.

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Recent experimental and theoretical work has demonstrated significant potential to tune the properties of silicon and germanium by adjusting the mesostructure, nanostructure, and/or crystalline structure of these group 14 elements. Despite the promise to achieve enhanced functionality with these already technologically important elements, a significant challenge lies in the identification of effective synthetic approaches that can access metastable silicon and germanium-based extended solids with a particular crystal structure or specific nano/meso-structured features. In this context, the class of intermetallic compounds known as Zintl phases has provided a platform for discovery of novel silicon and germanium-based materials. This review highlights some of the ways in which silicon and germanium-based Zintl phases have been utilized as precursors in innovative approaches to synthesize new crystalline modifications, nanoparticles, nanosheets, and mesostructured and nanoporous extended solids with properties that can be very different from the ground states of the elements.

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DEHGHANZADEH, M., A. ATAIE, and S. HESHMATI-MANESH. "SYNTHESIS OF NANOSIZE SILICON CARBIDE POWDER BY CARBOTHERMAL REDUCTION OF SiO2." International Journal of Modern Physics: Conference Series 05 (January 2012): 263–69. http://dx.doi.org/10.1142/s2010194512002115.

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A mixture of silicon carbide nano-particles and nano-whiskers has been synthesized through solid state reduction of silica by graphite employing high energy planetary ball milling for 25 h and subsequent heat treatment at 1300-1700°C in dynamic argon atmosphere. Effects of process conditions on the thermal behavior, phase composition and morphology of the samples were investigated using DTA/TGA, XRD and SEM, technique, respectively. DTA/TGA analysis shows that silicon carbide starts to form at ~ 1250°C. Analysis of the XRD patterns indicates that the phase composition of the sample heat treated at 1300°C for 2 h mainly consists of SiO 2 together with small amount of β- SiC . Nano-crystalline silicon carbide phase with a mean crystallite size of 38 nm was found to be dominate phase on heat treatment temperature at ~ 1500°C. Substantial SiO 2 was still remained in the above sample. SEM studies reveal that the sample heat treated at 1500°C for 2 h contains nano-particles and nano-whisker of β- SiC with a mean diameter of almost ~ 85 nm. The results obtained were also showed that the characteristics of the synthesized SiC particles strongly depend on the mechanical activation and heat treatment conditions.

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de Vrijer, Thierry, Maik Wiering, David van Nijen, Govind Padmakumar, Sriram Sambamurthy, Gianluca Limodio, and Arno H. M. Smets. "The optical performance of random and periodic textured mono crystalline silicon surfaces for photovoltaic applications." EPJ Photovoltaics 13 (2022): 23. http://dx.doi.org/10.1051/epjpv/2022021.

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Surface textures that result in high optical yields are crucial for high efficiency photovoltaic (PV) devices. In this work three different texturing approaches are presented that result in smooth concave structures devoid of sharp features. Such features can sustain the crack-free growth of device quality nano- to poly-crystalline materials such as nano-crystalline silicon, perovskites or C(I)GS, facilitating routes towards hybrid multijunction PV devices. A sacrificial implanted poly-c-Si layer is used to develop a random surface texture for the first texturing approach (Tsac). The influence of the processing conditions, such as layer thickness, implantation energy, dose and ion type, annealing time and temperature, of the sacrificial layer on the developed surface features is investigated. Additionally, a photolithographically developed honeycomb texture (Thoney) is presented. The influence of mask design on the honeycomb features is discussed and a relation is established between the honeycomb period and crack formation in nano-crystalline silicon layers. The reflective properties (spectral reflection, haze in reflection and angular intensity distribution) of these approaches are characterized and compared to a third texturing approach, Tsp, the result of chemically smoothened pyramidal <111> features. It was demonstrated that high optical scattering yields can be achieved for both Thoney and Tsp. Additionally, the performance of a-Si/nc-Si tandem devices processed onto the different textures is compared using both optical device simulations and real device measurements. Simulations demonstrate strong improvements in Jsc-sum (≈45%), in reference to a flat surface, and high Voc*FF of over 1 V are demonstrated for Tsp.

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