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Добірка наукової літератури з теми "Multiferroics - Data Storage"

Автор: Grafiati
Опубліковано: 7 вересня 2023

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Статті в журналах з теми "Multiferroics - Data Storage"

1

Song, Dongpo, Jie Yang, Bingbing Yang, Liangyu Chen, Fang Wang, and Xuebin Zhu. "Evolution of structure and ferroelectricity in Aurivillius Bi4Bin−3Fen−3Ti3O3n+3 thin films." Journal of Materials Chemistry C 6, no. 32 (2018): 8618–27. http://dx.doi.org/10.1039/c8tc02270d.

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2

Wang, Jiawei, Aitian Chen, Peisen Li, and Sen Zhang. "Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure." Materials 14, no. 16 (August 17, 2021): 4623. http://dx.doi.org/10.3390/ma14164623.

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Анотація:
Electric-field control of magnetism is significant for the next generation of large-capacity and low-power data storage technology. In this regard, the renaissance of a multiferroic compound provides an elegant platform owing to the coexistence and coupling of ferroelectric (FE) and magnetic orders. However, the scarcity of single-phase multiferroics at room temperature spurs zealous research in pursuit of composite systems combining a ferromagnet with FE or piezoelectric materials. So far, electric-field control of magnetism has been achieved in the exchange-mediated, charge-mediated, and strain-mediated ferromagnetic (FM)/FE multiferroic heterostructures. Concerning the giant, nonvolatile, and reversible electric-field control of magnetism at room temperature, we first review the theoretical and representative experiments on the electric-field control of magnetism via strain coupling in the FM/FE multiferroic heterostructures, especially the CoFeB/PMN–PT [where PMN–PT denotes the (PbMn1/3Nb2/3O3)1−x-(PbTiO3)x] heterostructure. Then, the application in the prototype spintronic devices, i.e., spin valves and magnetic tunnel junctions, is introduced. The nonvolatile and reversible electric-field control of tunneling magnetoresistance without assistant magnetic field in the magnetic tunnel junction (MTJ)/FE architecture shows great promise for the future of data storage technology. We close by providing the main challenges of this and the different perspectives for straintronics and spintronics.
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3

Zhong, Tingting, and Menghao Wu. "Fullerene-based 0D ferroelectrics/multiferroics for ultrahigh-density and ultrafast nonvolatile memories." Physical Chemistry Chemical Physics 22, no. 21 (2020): 12039–43. http://dx.doi.org/10.1039/d0cp01797c.

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Анотація:
Compared with conventional ferroelectrics for data storage, 0D ferroelectrics/multiferroics based on polar functionalized fullerene may be endowed with a high areal density and high writing speed that are several orders of magnitude higher.
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4

Ferreira, P., A. Castro, P. M. Vilarinho, M. G. Willinger, J. Mosa, C. Laberty, and C. Sanchez. "Electron Microscopy Study of Porous and Co Functionalized BaTiO3 Thin Films." Microscopy and Microanalysis 18, S5 (August 2012): 115–16. http://dx.doi.org/10.1017/s1431927612013232.

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Анотація:
Multiferroics are currently of great interest for applications in microelectronics namely in future data storage and spintronic devices. These materials couple simultaneously ferroelectric and ferromagnetic properties and have potentially different applications resulting from the coupling between their dual order parameters. A true multiferroic material is single phase. However, the known true multiferroic materials possess insufficient coupling between the two phenomena or their magnetoelectric response occurs at temperatures too low to be useful in practical applications. But a tremendous progress in the field of microelectronics can be expected if one is able to design an effective multiferroic material with ideal coupling of the ferromagnetic and ferroelectric properties to suit a particular application. Within this context composite structures are gaining considerable interest and different strategies in terms of materials microstructure have been proposed including horizontal multilayers and vertical heterostructures. In the horizontal multilayer heterostructures, the alternating layers of conventional ferro/ferrimagnetic and ferroelectric phases are grown, while in the vertical heterostructures nanopillars of the ferro/ferrimagnetic phase are embedded in a ferroelectric matrix. The later structures show advantages over the first ones because promote larger interfacial surface area and are intrinsically heteroepitaxial in three dimensions; which is expected to allow a stronger coupling between ferroelectric and ferromagnetic components.
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5

Pulphol, Nattakarn, R. Muanghlua, Surasak Niemcharoen, Wisanu Pecharapa, Wanwilai C. Vittayakorn, and Naratip Vittayakorn. "Magnetoelectric Properties of BaTiO3 – Co0.5Ni0.5Fe2O4 Composites Prepared by the Conventional Mixed Oxide Method." Advanced Materials Research 802 (September 2013): 22–26. http://dx.doi.org/10.4028/www.scientific.net/amr.802.22.

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Анотація:
Multiferroics, which display simultaneous ferrimagnetic and ferroelectric properties, have been interesting recently because of their potentially significant applications in multifunctional devices such as magnetic resonance, drug delivery, high-density data storage, ferrofluid technology, etc. Composites combining BaTiO3 with Co0.5Ni0.5Fe2O4 have influenced the interest of many researchers, due to their outstanding and distinguished character called magnetoelectric (ME). In this work, ferrimagnetic-ferroelectric composites of BaTiO3 nanopowder and Co0.5Ni0.5Fe2O4 nanopowders were prepared by a conventional mixed oxide method. The multiferroic ceramics were compounded with the formula, (1-x)BaTiO3-(x)Co0.5Ni0.5Fe2O4, in which x = 0, 0.05, 0.10, 0.20 and 0.35. All of the compositions were analyzed by an X-ray diffractometer (XRD) in order to reveal the phase of perovskite and spinal structure. Scanning electron microscopy (SEM) was used to examine the variation of morphology and grain size of the composited ceramics. The magnetism of all the ceramics was measured using a vibrating sample magnetometer (VSM). The results showed that microstructure and the amount of ferrite are related strongly with magnetization.
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6

Dai, Liyufen, Feng An, Juan Zou, Xiangli Zhong, and Gaokuo Zhong. "Freestanding inorganic oxide films for flexible electronics." Journal of Applied Physics 132, no. 7 (August 21, 2022): 070904. http://dx.doi.org/10.1063/5.0103092.

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Анотація:
Recently, flexible electronic devices are of increasing interest due to their wide range of application fields, including information storage, energy conversion, and wearable and implantable electronics. In particular, freestanding inorganic oxide films are proved to be an extraordinary versatile platform for flexible electronics owing to their super elasticity, outstanding functionalities, tunability, and long-term stability. In this Perspective, we review the up-to-date advances of freestanding inorganic oxide films from the perspectives of synthesis methods, physical properties, and device applications. First, preparation strategies based on epitaxial lift-off technologies are classified into physical and chemical aspects that are to be introduced. Second, we discuss the physical properties of freestanding inorganic oxide films, especially in terms of ferroelectricity, magnetism, multiferroics, etc. Third, we highlight several device applications in the fields of data memory, energy storage, and health care. Finally, we conclude with a future perspective into prospects and challenges regarding the syntheses and applications of freestanding inorganic oxide films.
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7

Sharif, Muhammad Kashif, Muhammad Azhar Khan, Muhammad Junaid, and Muhammad Javed Akhter. "Enhanced magnetic and ferroelectric properties of K–Hf substituted BiFeO3 multiferroics for magnetoelectric data storage applications." Ferroelectrics 599, no. 1 (October 26, 2022): 168–77. http://dx.doi.org/10.1080/00150193.2022.2113649.

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8

Aleksandrov, Aleksey I., and Vitaliy G. Shevchenko. "Mechanochemical Activation of Superradiance in Paramagnetic Polymer Composites." Materials 16, no. 3 (February 2, 2023): 1297. http://dx.doi.org/10.3390/ma16031297.

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Анотація:
The review examines the effect of radio-frequency superradiance during pulsed mechanochemical activation of polymer composites under high pressure. Mechanochemical activation is implemented in three modes: (a) rheological explosion of polymer composite under rapid uniaxial compression, when an elastic wave pulse occurs in a polymer composite sample and implements the physico-chemical transformations leading to the occurrence of a superradiance pulse; (b) parametric mode, when an elastic wave pulse is introduced from the outside through a waveguide into a composite sample; (c) the mode of rapid pressure release, which also leads to the occurrence of a superradiance pulse. Paramagnetic polymer composites—namely polystyrene–binuclear clusters Co(QH)2–O–Co(QH)2 or Mn(QH)2–O–Mn(QH)2, where QH is a ligand based on QH2–3,6-di-tert-butylpyrocatechin)—are considered as objects implementing such processes. These binuclear clusters exhibit the Dzyaloshinskii–Moriya effect, and polymer composites based on them exhibit multiferroic properties. A composite of a molecular magnet in polystyrene matrix (Eu(III)(SQ)3·bipy complex with four unpaired electrons on Eu(III) and on SQ ligands; SQ is 3,6-di-tert-butylquinolate paramagnetic ligand) is also considered. The binuclear clusters and europium complexes form 2D nano-objects in the polymer matrix with a diameter of 50–100 nm and a thickness of ~ 1–2 nm. The review considers the formalisms of Dicke, Lorentz, Landau–Lifshitz–Blombergen and Havriliak–Negami equations, which make it possible to conduct a time–frequency analysis of these processes, to obtain data on the relaxation processes of spin and charge density in objects responsible for the process of radio-frequency superradiation. It is also shown that the analysis of electron spin resonance data allows us to provide a probable quantum chemical scheme for the implementation of the radio-frequency superradiance process. The phenomenon of superradiation has a great deal of potential in such areas as energy-saving technologies, wireless power transmission and storage devices. The technique of studying fast mechanochemical processes considered in the review allows us to investigate the mechanisms of interaction of magnetic and electrical subsystems in multiferroics and molecular magnets, which expands the scientific base for the creation of new functional materials and enables the solving of related problems of condensed matter physics.
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9

Chen, Shanbao, Huasheng Sun, Junfei Ding, Fang Wu, Chengxi Huang, and Erjun Kan. "Unconventional distortion induced two-dimensional multiferroicity in a CrO3 monolayer." Nanoscale 13, no. 30 (2021): 13048–56. http://dx.doi.org/10.1039/d1nr02335g.

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10

Vopson, M. M., E. Zemaityte, M. Spreitzer, and E. Namvar. "Multiferroic composites for magnetic data storage beyond the super-paramagnetic limit." Journal of Applied Physics 116, no. 11 (September 21, 2014): 113910. http://dx.doi.org/10.1063/1.4896129.

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Частини книг з теми "Multiferroics - Data Storage"

1

Bhardwaj, S. "Multiferroicity in Aurivillius Based Bi4Ti3O12 Ceramics: An Overview, Future Prospective and Comparison with Ferrites." In Materials Research Foundations, 311–35. Materials Research Forum LLC, 2021. http://dx.doi.org/10.21741/9781644901595-9.

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Анотація:
The growing modern society demands more new generation devices to fulfil their requirements. This has forced the scientific community to develop multifunctional smart devices. Aurivillius based Bi4Ti3O12 ceramics are one of the leading families of oxide materials, which attract immense attention due to their electrical, ferroelectric, optical, and dielectric properties. These materials have gained special attention due to their numerous device applications such as magnetic recording, sensors, read head technology, spintronic devices, switching devices, data storage devices and multiple state memory devices etc. Multiferroic are the materials in which two or more than two ferroic orders exist simultaneously. This chapter focuses on the possibility of existence of multiferroic behaviour in Aurivillius based compounds specially Bi4Ti3O12. Firstly, we have discussed the basics of multiferroics and their types and the magnetoelectric effect. The effect of different dopants in originating the multiferroism in Bi4Ti3O12 have been reviewed and discuss in detail. At the end comparison of multiferroic and ferrite materials and their future perspective have been discussed.
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2

Chand Verma, Kuldeep. "Synthesis and Characterization of Multiferroic BiFeO3 for Data Storage." In Bismuth - Fundamentals and Optoelectronic Applications. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.94049.

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Анотація:
Multiferroic BiFeO3 deals with spintronic devices involved spin-charge processes and applicable in new non-volatile memory devices to store information for computing performance and the magnetic random access memories storage. Since multiferroic leads to the new generation memory devices for which the data can be written electrically and read magnetically. The main advantage of present study of multiferroic BiFeO3 is that to observe magnetoelectric effects at room temperature. The nanostructural growth (for both size and shape) of BiFeO3 may depend on the selection of appropriate synthesis route, reaction conditions and heating processes. In pure BiFeO3, the ferroelectricity is induced by 6s2 lone-pair electrons of Bi3+ ions and the G-type antiferromagnetic ordering resulting from Fe3+ spins order of cycloidal (62-64 nm wavelength) occurred below Neel temperature, TN = 640 K. The multiferroicity of BiFeO3 is disappeared due to factors such as impurity phases, leakage current and low value of magnetization. Therefore, to overcome such factors to get multiferroic enhancement in BiFeO3, there are different possible ways like changes dopant ions and their concentrations, BiFeO3 composites as well as thin films especially multilayers.
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