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Статті в журналах з теми "Multiband doherty power amplifier"
Wiegner, Dirk, Gerhard Luz, Patrick Jüschke, Robin Machinal, Thomas Merk, Ulrich Seyfried, Wolfgang Templ, Andreas Pascht, Rüdiger Quay, and Friedbert Van Raay. "AlGaN/GaN-based power amplifiers for mobile radio applications: a review from the system supplier's perspective." International Journal of Microwave and Wireless Technologies 2, no. 1 (February 2010): 95–104. http://dx.doi.org/10.1017/s175907871000022x.
Повний текст джерелаKalyan, Robin, Karun Rawat, and Shiban K. Koul. "Reconfigurable and Concurrent Dual-Band Doherty Power Amplifier for Multiband and Multistandard Applications." IEEE Transactions on Microwave Theory and Techniques 65, no. 1 (January 2017): 198–208. http://dx.doi.org/10.1109/tmtt.2016.2614930.
Повний текст джерелаNghiem, Xuan Anh, Junqing Guan, Thomas Hone, and Renato Negra. "Design of Concurrent Multiband Doherty Power Amplifiers for Wireless Applications." IEEE Transactions on Microwave Theory and Techniques 61, no. 12 (December 2013): 4559–68. http://dx.doi.org/10.1109/tmtt.2013.2281959.
Повний текст джерелаPang, Jingzhou, Zhijiang Dai, Yue Li, Meng Li, and Anding Zhu. "Multiband Dual-Mode Doherty Power Amplifier Employing Phase Periodic Matching Network and Reciprocal Gate Bias for 5G Applications." IEEE Transactions on Microwave Theory and Techniques 68, no. 6 (June 2020): 2382–97. http://dx.doi.org/10.1109/tmtt.2020.2971481.
Повний текст джерелаKim, Bumman, Jangheon Kim, Ildu Kim, and Jeonghyeon Cha. "The Doherty power amplifier." IEEE Microwave Magazine 7, no. 5 (October 2006): 42–50. http://dx.doi.org/10.1109/mw-m.2006.247914.
Повний текст джерелаQi, Xiaobo, and Fei Xiao. "Filtering Doherty power amplifier." IET Microwaves, Antennas & Propagation 14, no. 10 (May 29, 2020): 1074–78. http://dx.doi.org/10.1049/iet-map.2019.0835.
Повний текст джерелаVorapipat, Voravit, Cooper S. Levy, and Peter M. Asbeck. "Voltage Mode Doherty Power Amplifier." IEEE Journal of Solid-State Circuits 52, no. 5 (May 2017): 1295–304. http://dx.doi.org/10.1109/jssc.2017.2647954.
Повний текст джерелаOsman Luhaib, Saad Wasmi. "Design of a Doherty Power Amplifier for GSM Systems." Tikrit Journal of Engineering Sciences 18, no. 3 (September 30, 2011): 61–67. http://dx.doi.org/10.25130/tjes.18.3.07.
Повний текст джерелаXi, Wang, Yu Shi, Shao Lin Yang, and Jun Li. "Doherty Power Amplifier with Dynamic Power Dividing Network for Enhanced Efficiency." Applied Mechanics and Materials 721 (December 2014): 560–63. http://dx.doi.org/10.4028/www.scientific.net/amm.721.560.
Повний текст джерелаChun, S. H., D. H. Jang, J. Y. Kim, and J. H. Kim. "Inverted asymmetric Doherty power amplifier driven by two-stage symmetric Doherty amplifier." Electronics Letters 46, no. 17 (2010): 1208. http://dx.doi.org/10.1049/el.2010.1708.
Повний текст джерелаДисертації з теми "Multiband doherty power amplifier"
Jansen, Roelof. "Evaluation of Doherty Amplifier Implementations." Thesis, Stellenbosch : Stellenbosch University, 2008. http://hdl.handle.net/10019.1/20445.
Повний текст джерелаENGLISH ABSTRACT: Modern communication systems demand efficient, linear power amplifiers. The amplifiers are often operated in the backed-off power levels at which linear amplifiers such as class B amplifier are particularly inefficient. The Doherty amplifier provides an improvement as it increases efficiency at backed of power levels. Doherty amplifiers consists of two amplifiers, a carrier amplifier and a peaking amplifier, of which the output is combined in a novel way. Implementation of the Doherty amplifier with transistors is not ideal. One of the main problems is the insufficient current production of the peaking amplifier at peak envelope power (PEP) if it is implemented as a class C amplifier. A suggested solution to this problem is a bias adaption system that controls the peaking amplifier gate voltage dynamically depending on the input power levels. The design and evaluation of such a adaptive Doherty amplifier is the main goal of this thesis. A classical Doherty amplifier with and an uneven Doherty amplifier with unequal power division between the carrier and peaking amplifiers are also evaluated and compared with the adaptive Doherty amplifier. The amplifiers are designed using a 10 W LDMOS FET device, the MRF282. The adaptive Doherty amplifier and the uneven Doherty amplifier show significant improvements in efficiency and output power over the even Doherty amplifier. At PEP the adaptive Doherty delivers 42.4 dBm at 39.75 % power added efficiency (PAE), the uneven Doherty amplifier 41.9 dBm at 40.75 % PAE and the even Doherty amplifier 40.8 dBm at 38.6 % PAE. At 3dB backed-off input power the adaptive Doherty amplifier has an efficiency of 34.3%, compared to 34.9 5% for the uneven Doherty amplifier and 29.75 % for the even Doherty amplifier.
AFRIKAANSE OPSOMMING: Moderne kommunikasie stelsels vereis effektiewe, linieêre drywing versterkers. Die versterkers word dikwels in laer drywings vlakke bedryf waar linieêre versterkers soos ’n klas B versterker besondere lae effektiwiteit het. Die Doherty versterker bied ’n uitweg omdat dit verbeterde effektiwiteit by lae drywings vlakke bied. ’n Doherty versterker bestaan uit twee versterkers, die hoof versterker en die aanvullende versterker, waarvan die uittrees met ’n spesiale kombinasie netwerk bymekaar gevoeg word. Die implementasie van Doherty versterkers met transistors is nie ideaal nie. Een van die hoof probleme is die onvoldoende stroom wat deur die aanvullings versterker gebied word by piek omhulsel drywing (POD). ’n Oplossing vir die probleem is om ’n aanpassings sisteem te gebruik wat die aanvullende versterker se hekspanning dinamies beheer afhangende van die intree drywings vlakke. Die ontwerp en evaluasie van so ’n aanpassings Doherty versterker is die hoof doel van hierdie tesis. ’n Klassieke Doherty versterke met gelyke drywings verdeling en ’n ongelyke Doherty versterker wat gebruik maak van ongelyke drywings verdeling tussen die hoof-en aanvullende versterkers is ook gevalueer en vergelyk met die aanpassings Doherty versterker. Die versterkers was ontwerp met ’n 10 W LDMOS FET, die MRF282. Die aanpassings Doherty versterker en die ongelyke Doherty versterker het aanmerklike verbeteringe in effektiwiteit en uittree drywing gebring in vergelyking met die ewe Doherty versterker. By POD het die aanpassings versterker 42.4 dBm teen 39.75 % drywing toegevoegde effektiwiteit (DTE) gelewer, die ongelyke Doherty versterker 41.9 dBm teen 40.75 % DTE, en die ewe Doherty versterker 40.8 dBm teen 38.6 DTE. By ’n intree drywingsvlak 3 dB laer as POD het die aanpassings Doherty versterker ’n effektiwiteit van 34.3 % getoon, in vergelyking met die onewe Doherty versterker se 34.9 % en die ewe Doherty versterker se 29.75 % DTE.
Kamarudin, Syalwani. "Advanced Doherty power amplifier design for modern communication systems." Thesis, Cardiff University, 2018. http://orca.cf.ac.uk/115269/.
Повний текст джерелаGebremicael, Kibrom Negash. "Compressive sensing based multiband RF power amplifier linearisation." Thesis, University of Bristol, 2016. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.730827.
Повний текст джерелаTarar, Mohsin Mumtaz. "Design and Implementation of as Asymmetric Doherty Power Amplifier at 2.65 GHz in GaN HEMT Technology." Thesis, Linköpings universitet, Elektroniska komponenter, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-75976.
Повний текст джерелаSmith, Karla Jenny Isabella. "Gate Bias Control and Harmonic Load Modulation for a Doherty Amplifier." Thesis, University of Canterbury. Electrical and Computer Engineering, 2009. http://hdl.handle.net/10092/2856.
Повний текст джерелаViswanathan, Vani. "Efficiency Enhancement of Base Station Power Amplifiers Using Doherty Technique." Thesis, Virginia Tech, 2004. http://hdl.handle.net/10919/9907.
Повний текст джерелаMaster of Science
Sajedin, M., Issa T. Elfergani, Jonathan Rodriguez, Raed A. Abd-Alhameed, M. Fernandez-Barciela, and M. Violas. "Ultra-Compact mm-Wave Monolithic IC Doherty Power Amplifier for Mobile Handsets." MDPI, 2021. http://hdl.handle.net/10454/18600.
Повний текст джерелаThis work develops a novel dynamic load modulation Power Amplifier (PA) circuity that can provide an optimum compromise between linearity and efficiency while covering multiple cellular frequency bands. Exploiting monolithic microwave integrated circuits (MMIC) technology, a fully integrated 1W Doherty PA architecture is proposed based on 0.1 µm AlGaAs/InGaAs Depletion- Mode (D-Mode) technology provided by the WIN Semiconductors foundry. The proposed wideband DPA incorporates the harmonic tuning Class-J mode of operation, which aims to engineer the voltage waveform via second harmonic capacitive load termination. Moreover, the applied post-matching technique not only reduces the impedance transformation ratio of the conventional DPA, but also restores its proper load modulation. The simulation results indicate that the monolithic drive load modulation PA at 4 V operation voltage delivers 44% PAE at the maximum output power of 30 dBm at the 1 dB compression point, and 34% power-added efficiency (PAE) at 6 dB power back-off (PBO). A power gain flatness of around 14 ± 0.5 dB was achieved over the frequency band of 23 GHz to 27 GHz. The compact MMIC load modulation technique developed for the 5G mobile handset occupies the die area of 3.2.
This research was funded by the European Regional Development Fund (FEDER), through COMPETE 2020, POR ALGARVE 2020, Fundação para a Ciência e a Tecnologia (FCT) under i-Five Project (POCI-01-0145-FEDER-030500). This work is also part of the POSITION-II project funded by the ECSEL joint Undertaking under grant number Ecsel-345 7831132-Postitio-II-2017-IA. This work is supported by FCT/MCTES through national funds and when applicable co-funded EU funds under the project UIDB/50008/2020-UIDP/50008/2020. The authors would like to thank the WIN Semiconductors foundry for providing the MMIC GaAs pHEMT PDKs and technical support. This work is supported by the Project TEC2017-88242-C3-2-R- Spanish Ministerio de Ciencia, Innovación e Universidades and EU-FEDER funding.
Shao, Jin. "Advanced Power Amplifiers Design for Modern Wireless Communication." Thesis, University of North Texas, 2015. https://digital.library.unt.edu/ark:/67531/metadc804973/.
Повний текст джерелаSeneviratne, Sashieka. "Efficiency Enhancement of Pico-cell Base Station Power Amplifier MMIC in GaN HFET Technology Using the Doherty Technique." Thèse, Université d'Ottawa / University of Ottawa, 2012. http://hdl.handle.net/10393/23078.
Повний текст джерелаBarakat, Ayman. "Doherty power amplifier efficiency and bandwidth enhancement based on a generic design approach." Thesis, Queen's University Belfast, 2017. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.725336.
Повний текст джерелаЧастини книг з теми "Multiband doherty power amplifier"
Elsayed, Nourhan, Hani Saleh, Baker Mohammad, Mohammed Ismail, and Mihai Sanduleanu. "Doherty Power Amplifier." In Analog Circuits and Signal Processing, 21–30. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-92746-2_3.
Повний текст джерелаChen, Wenhua, Karun Rawat, and Fadhel M. Ghannouchi. "Multiband Power Amplifier Design." In Multiband RF Circuits and Techniques for Wireless Transmitters, 157–201. Berlin, Heidelberg: Springer Berlin Heidelberg, 2016. http://dx.doi.org/10.1007/978-3-662-50440-6_5.
Повний текст джерелаPradeep, Deepa, and B. Ananda Venkatesan. "All-Digital RF Transmitter with Highly Power-Efficient Doherty Power Amplifier." In Lecture Notes in Electrical Engineering, 19–26. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-7251-2_3.
Повний текст джерелаShahmordi, Mohammad, Sayyed-Hossein Javid-Hosseini, Vahid Nayyeri, Rocco Giofrè, and Paolo Colantonio. "A Broadband Doherty Power Amplifier for Sub-6 5G Applications." In Proceedings of SIE 2022, 69–74. Cham: Springer Nature Switzerland, 2023. http://dx.doi.org/10.1007/978-3-031-26066-7_11.
Повний текст джерелаAbdulkhaleq, Ahmed M., Yasir Al-Yasir, Naser Ojaroudi Parchin, Jack Brunning, Neil McEwan, Ashwain Rayit, Raed A. Abd-Alhameed, James Noras, and Nabeel Abduljabbar. "A 70-W Asymmetrical Doherty Power Amplifier for 5G Base Stations." In Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering, 446–54. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-05195-2_44.
Повний текст джерелаSingh, Sukhpreet, and Paras Chawla. "A Highly Efficient and Broadband Doherty Power Amplifier Design for 5G Base Station." In Proceedings of International Conference on Data Science and Applications, 201–11. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-5120-5_16.
Повний текст джерелаKim, Bumman. "Enhancement of Doherty Amplifier." In Doherty Power Amplifiers, 65–99. Elsevier, 2018. http://dx.doi.org/10.1016/b978-0-12-809867-7.00003-x.
Повний текст джерела"The Doherty Power Amplifier." In High Efficiency RF and Microwave Solid State Power Amplifiers, 435–94. Chichester, UK: John Wiley & Sons, Ltd, 2009. http://dx.doi.org/10.1002/9780470746547.ch11.
Повний текст джерелаColantonio, Paolo, Franco Giannini, Rocco Giofre, and Luca Piazzo. "The Doherty Power Amplifier." In Advanced Microwave Circuits and Systems. InTech, 2010. http://dx.doi.org/10.5772/8431.
Повний текст джерелаKim, Bumman. "Introduction to Doherty Power Amplifier." In Doherty Power Amplifiers, 1–30. Elsevier, 2018. http://dx.doi.org/10.1016/b978-0-12-809867-7.00001-6.
Повний текст джерелаТези доповідей конференцій з теми "Multiband doherty power amplifier"
Juschke, P., D. Wiegner, G. Luz, R. Machinal, A. Pascht, and R. Quay. "Multiband Doherty RF power amplifier." In AFRICON 2011. IEEE, 2011. http://dx.doi.org/10.1109/afrcon.2011.6072119.
Повний текст джерелаTakenaka, Kiichiro, Tsuyoshi Sato, Hidetoshi Matsumoto, Makoto Kawashima, and Norio Nakajima. "Novel broadband Doherty power amplifier design for multiband handset applications." In 2017 IEEE/MTT-S International Microwave Symposium - IMS 2017. IEEE, 2017. http://dx.doi.org/10.1109/mwsym.2017.8058693.
Повний текст джерелаTakenaka, Kiichiro, Yuuma Noguchi, Satoshi Arayashiki, and Takaya Wada. "Multiband Doherty Power Amplifier Design for 5G NR Sub-6 GHz Handset Applications." In 2022 Asia-Pacific Microwave Conference (APMC). IEEE, 2022. http://dx.doi.org/10.23919/apmc55665.2022.9999751.
Повний текст джерелаHu, Song, Fei Wang, and Hua Wang. "2.1 A 28GHz/37GHz/39GHz multiband linear Doherty power amplifier for 5G massive MIMO applications." In 2017 IEEE International Solid- State Circuits Conference - (ISSCC). IEEE, 2017. http://dx.doi.org/10.1109/isscc.2017.7870246.
Повний текст джерелаPengelly, Raymond S. "The Doherty power amplifier." In 2015 IEEE MTT-S International Microwave Symposium (IMS2015). IEEE, 2015. http://dx.doi.org/10.1109/mwsym.2015.7166705.
Повний текст джерелаQureshi, Jawad H., Walter Sneijers, and John Gajadharsing. "Odd-mode Doherty power amplifier." In 2016 IEEE/MTT-S International Microwave Symposium (IMS). IEEE, 2016. http://dx.doi.org/10.1109/mwsym.2016.7540199.
Повний текст джерелаColantonio, Paolo, Franco Giannini, Rocco Giofre, and Luca Piazzon. "Designing a Doherty power amplifier." In MELECON 2010 - 2010 15th IEEE Mediterranean Electrotechnical Conference. IEEE, 2010. http://dx.doi.org/10.1109/melcon.2010.5476033.
Повний текст джерелаRen, Han, Jin Shao, Bayaner Arigong, Mi Zhou, Song Fu, Jun Ding, Hyoungsoo Kim, and Hualiang Zhang. "Simplified Doherty power amplifier structures." In 2015 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS). IEEE, 2015. http://dx.doi.org/10.1109/wmcas.2015.7233219.
Повний текст джерелаSaad, Paul, Rui Hou, Richard Hellberg, and Bo Berglund. "Ultra-Wideband Doherty-Like Power Amplifier." In 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018. IEEE, 2018. http://dx.doi.org/10.1109/mwsym.2018.8439677.
Повний текст джерелаLyu, Haifeng, Yuchen Cao, and Kenle Chen. "Doherty-to-Balanced Switchable Power Amplifier." In 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019. IEEE, 2019. http://dx.doi.org/10.1109/mwsym.2019.8700948.
Повний текст джерелаЗвіти організацій з теми "Multiband doherty power amplifier"
Baker, Bryant. A 3.6 GHz Doherty Power Amplifier with a 40 dBm Saturated Output Power using GaN on SiC HEMT Devices. Portland State University Library, January 2000. http://dx.doi.org/10.15760/etd.1780.
Повний текст джерела