Статті в журналах з теми "Multi-Gate Transistors"
Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями
Ознайомтеся з топ-50 статей у журналах для дослідження на тему "Multi-Gate Transistors".
Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.
Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.
Переглядайте статті в журналах для різних дисциплін та оформлюйте правильно вашу бібліографію.
Lin, Jinhan. "Advancement and Challenges of Field Effect Transistors based on Multi-gate Transistor." Journal of Physics: Conference Series 2370, no. 1 (November 1, 2022): 012004. http://dx.doi.org/10.1088/1742-6596/2370/1/012004.
Повний текст джерелаSporea, Radu Alexandru. "(Invited) Multi-Gate Contact-Controlled Transistors." ECS Meeting Abstracts MA2021-01, no. 32 (May 30, 2021): 1058. http://dx.doi.org/10.1149/ma2021-01321058mtgabs.
Повний текст джерелаSeon, Kim, Kim, and Jeon. "Analytical Current-Voltage Model for Gate-All-Around Transistor with Poly-Crystalline Silicon Channel." Electronics 8, no. 9 (September 4, 2019): 988. http://dx.doi.org/10.3390/electronics8090988.
Повний текст джерелаZHANG, WEIQIANG, LI SU, YU ZHANG, LINFENG LI, and JIANPING HU. "LOW-LEAKAGE FLIP-FLOPS BASED ON DUAL-THRESHOLD AND MULTIPLE LEAKAGE REDUCTION TECHNIQUES." Journal of Circuits, Systems and Computers 20, no. 01 (February 2011): 147–62. http://dx.doi.org/10.1142/s0218126611007128.
Повний текст джерелаMo, Zening, Zhidi Jiang, and Jianping Hu. "A Novel Three-Input Field Effect Transistor with Parallel Switching Function Using T-Shaped Channel." Journal of Electrical and Computer Engineering 2022 (April 11, 2022): 1–12. http://dx.doi.org/10.1155/2022/1432545.
Повний текст джерелаYang, Maolong, Yao Lu, Qiancui Zhang, Zhao Han, Yichi Zhang, Maliang Liu, Ningning Zhang, Huiyong Hu, and Liming Wang. "Charge transport behaviors in a multi-gated WSe2/MoS2 heterojunction." Applied Physics Letters 121, no. 4 (July 25, 2022): 043501. http://dx.doi.org/10.1063/5.0097390.
Повний текст джерелаChu, Shunan. "Comparative Analysis of Optimization Schemes of Carry Look-ahead Adder." Journal of Physics: Conference Series 2290, no. 1 (June 1, 2022): 012008. http://dx.doi.org/10.1088/1742-6596/2290/1/012008.
Повний текст джерелаKondo, Jun, Murali Lingalugari, Pik-Yiu Chan, Evan Heller, and Faquir Jain. "Modeling and Fabrication of Quantum Dot Channel Field Effect Transistors Incorporating Quantum Dot Gate." MRS Proceedings 1551 (2013): 149–54. http://dx.doi.org/10.1557/opl.2013.899.
Повний текст джерелаBoampong, Amos Amoako, Jae-Hyeok Cho, Yoonseuk Choi, and Min-Hoi Kim. "Enhancement of the Retention Characteristics in Solution-Processed Ferroelectric Memory Transistor with Dual-Gate Structure." Journal of Nanoscience and Nanotechnology 21, no. 3 (March 1, 2021): 1766–71. http://dx.doi.org/10.1166/jnn.2021.18923.
Повний текст джерелаBhadra, Debabrata. "USING PERCOLATIVE CRYSTALLINE 0.3 CUO/PVDF NANOCOMPOSITE GATE DIELECTRIC FOR FABRICATING HIGH-EFFECT MOBILITY THIN FILM TRANSISTOR OPERATING AT LOW VOLTAGE." International Journal of Advanced Research 9, no. 11 (November 30, 2021): 1095–101. http://dx.doi.org/10.21474/ijar01/13846.
Повний текст джерелаMirdha, Pial, Murali Lingalugari, Evan K. Heller, John A. Chandy, and Faquir C. Jain. "Novel Multiplexer Design Using Multi-State Spatial Wavefunction-Switched (SWS) FETs." International Journal of High Speed Electronics and Systems 24, no. 03n04 (September 2015): 1520011. http://dx.doi.org/10.1142/s0129156415200116.
Повний текст джерелаJeong, Moon-Young, Yoon-Ha Jeong, Sung-Woo Hwang, and Dae M. Kim. "Performance of Single-Electron Transistor Logic Composed of Multi-gate Single-Electron Transistors." Japanese Journal of Applied Physics 36, Part 1, No. 11 (November 15, 1997): 6706–10. http://dx.doi.org/10.1143/jjap.36.6706.
Повний текст джерелаDoucet, Jean-Christophe, Aimad Saib, Christian Mourad, François Piette, Etienne Vanzieleghem, and Pierre Delatte. "HADES®: a High-Temperature Isolated Gate Driver Solution for SiC-based Multi-kW Converters." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (January 1, 2011): 000145–51. http://dx.doi.org/10.4071/hiten-paper3-jcdoucet.
Повний текст джерелаWan, Haoji, Xianyun Liu, Xin Su, Xincheng Ren, Shengting Luo, and Qi Zhou. "Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)." Applied Sciences 12, no. 21 (November 7, 2022): 11279. http://dx.doi.org/10.3390/app122111279.
Повний текст джерелаQian, Chuan, Ling-an Kong, Junliang Yang, Yongli Gao, and Jia Sun. "Multi-gate organic neuron transistors for spatiotemporal information processing." Applied Physics Letters 110, no. 8 (February 20, 2017): 083302. http://dx.doi.org/10.1063/1.4977069.
Повний текст джерелаZhu, Li Qiang, Hui Xiao, Yang Hui Liu, Chang Jin Wan, Yi Shi, and Qing Wan. "Multi-gate synergic modulation in laterally coupled synaptic transistors." Applied Physics Letters 107, no. 14 (October 5, 2015): 143502. http://dx.doi.org/10.1063/1.4932568.
Повний текст джерелаColinge, Jean-Pierre, Dimitri Lederer, Aryan Afzalian, Ran Yan, Chi-Woo Lee, Nima Dehdashti Akhavan, and Weize Xiong. "Properties of Accumulation-Mode Multi-Gate Field-Effect Transistors." Japanese Journal of Applied Physics 48, no. 3 (March 23, 2009): 034502. http://dx.doi.org/10.1143/jjap.48.034502.
Повний текст джерелаLin, Yu-Ru, Yi-Yun Yang, Yu-Husien Lin, Erry Dwi Kurniawan, Mu-Shih Yeh, Lun-Chun Chen, and Yug-Chun Wu. "Performance of Stacked Nanosheets Gate-All-Around and Multi-Gate Thin-Film-Transistors." IEEE Journal of the Electron Devices Society 6 (2018): 1187–91. http://dx.doi.org/10.1109/jeds.2018.2873008.
Повний текст джерелаSamuel, T. S. Arun, and M. Karthigai Pandian. "Comparative Performance Analysis of Multi Gate Tunnel Field Effect Transistors." Journal of Nano Research 41 (May 2016): 1–8. http://dx.doi.org/10.4028/www.scientific.net/jnanor.41.1.
Повний текст джерелаAbdul Tahrim, ‘Aqilah binti, Huei Chaeng Chin, Cheng Siong Lim, and Michael Loong Peng Tan. "Design and Performance Analysis of 1-Bit FinFET Full Adder Cells for Subthreshold Region at 16 nm Process Technology." Journal of Nanomaterials 2015 (2015): 1–13. http://dx.doi.org/10.1155/2015/726175.
Повний текст джерелаMaisurah Mohd Hassan, Siti, Yusman M. Yusof, Arjuna Marzuki, Nazif Emran Farid, Siti Amalina Enche Ab Rahim та Mohd Hafis M. Ali. "RF characteristics of 0.13-μm NMOS transistors for millimeter-wave application". Microelectronics International 31, № 2 (29 квітня 2014): 116–20. http://dx.doi.org/10.1108/mi-09-2013-0044.
Повний текст джерелаKwon, Hyunah, Hocheon Yoo, Masahiro Nakano, Kazuo Takimiya, Jae-Joon Kim, and Jong Kyu Kim. "Gate-tunable gas sensing behaviors in air-stable ambipolar organic thin-film transistors." RSC Advances 10, no. 4 (2020): 1910–16. http://dx.doi.org/10.1039/c9ra09195e.
Повний текст джерелаWessely, F., T. Krauss, and U. Schwalke. "CMOS without doping: Multi-gate silicon-nanowire field-effect-transistors." Solid-State Electronics 70 (April 2012): 33–38. http://dx.doi.org/10.1016/j.sse.2011.11.011.
Повний текст джерелаErine, Catherine, Jun Ma, Giovanni Santoruvo, and Elison Matioli. "Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors." IEEE Electron Device Letters 41, no. 3 (March 2020): 321–24. http://dx.doi.org/10.1109/led.2020.2967458.
Повний текст джерелаWang, Xiangjing, Li Zhu, Chunsheng Chen, Huiwu Mao, Yixin Zhu, Ying Zhu, Yang Yang, Changjin Wan, and Qing Wan. "Freestanding multi-gate IZO-based neuromorphic transistors on composite electrolyte membranes." Flexible and Printed Electronics 6, no. 4 (December 1, 2021): 044008. http://dx.doi.org/10.1088/2058-8585/ac4203.
Повний текст джерелаYu, Ji-Man, Chungryeol Lee, Joon-Kyu Han, Seong-Joo Han, Geon-Beom Lee, Sung Gap Im, and Yang-Kyu Choi. "Multi-functional logic circuits composed of ultra-thin electrolyte-gated transistors with wafer-scale integration." Journal of Materials Chemistry C 9, no. 22 (2021): 7222–27. http://dx.doi.org/10.1039/d1tc01486b.
Повний текст джерелаKondo, Jun, Pial Mirdha, Barath Parthasarathy, Pik-Yiu Chan, Bander Saman, Faquir Jain, and Evan Heller. "Modeling and Fabrication of GeOx-Ge Cladded Quantum Dot Channel (QDC) FETs on Poly-Silicon." International Journal of High Speed Electronics and Systems 27, no. 01n02 (March 2018): 1840005. http://dx.doi.org/10.1142/s0129156418400050.
Повний текст джерелаKwon, Hyuk-Min, Dae-Hyun Kim, and Tae-Woo Kim. "Instability in In0.7Ga0.3As Quantum-Well MOSFETs with Single-Layer Al2O3 and Bi-Layer Al2O3/HfO2 Gate Stacks Caused by Charge Trapping under Positive Bias Temperature (PBT) Stress." Electronics 9, no. 12 (December 1, 2020): 2039. http://dx.doi.org/10.3390/electronics9122039.
Повний текст джерелаWang, Ding, Ping Wang, Minming He, Jiangnan Liu, Shubham Mondal, Mingtao Hu, Danhao Wang, Yuanpeng Wu, Tao Ma, and Zetian Mi. "Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT." Applied Physics Letters 122, no. 9 (February 27, 2023): 090601. http://dx.doi.org/10.1063/5.0143645.
Повний текст джерелаChang, P. C., K. H. Lee, Z. H. Wang, and S. J. Chang. "AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer." Journal of Nanomaterials 2014 (2014): 1–4. http://dx.doi.org/10.1155/2014/623043.
Повний текст джерелаZhao, Yuhang, and Jie Jiang. "Recent Progress on Neuromorphic Synapse Electronics: From Emerging Materials, Devices, to Neural Networks." Journal of Nanoscience and Nanotechnology 18, no. 12 (December 1, 2018): 8003–15. http://dx.doi.org/10.1166/jnn.2018.16428.
Повний текст джерелаNagy, Daniel, Manuel Aldegunde, Muhammad A. Elmessary, Antonio J. García-Loureiro, Natalia Seoane, and Karol Kalna. "Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness." Journal of Physics: Condensed Matter 30, no. 14 (March 15, 2018): 144006. http://dx.doi.org/10.1088/1361-648x/aab10f.
Повний текст джерелаMalik, Gul Faroz Ahmad, Mubashir Ahmad Kharadi, and Farooq Ahmad Khanday. "Electrically reconfigurable logic design using multi-gate spin Field Effect Transistors." Microelectronics Journal 90 (August 2019): 278–84. http://dx.doi.org/10.1016/j.mejo.2019.07.003.
Повний текст джерелаDeng, Guoqing, and Chunhong Chen. "Binary Multiplication Using Hybrid MOS and Multi-Gate Single-Electron Transistors." IEEE Transactions on Very Large Scale Integration (VLSI) Systems 21, no. 9 (September 2013): 1573–82. http://dx.doi.org/10.1109/tvlsi.2012.2217993.
Повний текст джерелаLiu, Kai, Yuan Liu, Yu-Rong Liu, Yun-Fei En, and Bin Li. "Comparative study of mobility extraction methods in p-type polycrystalline silicon thin film transistors." Modern Physics Letters B 31, no. 19-21 (July 27, 2017): 1740007. http://dx.doi.org/10.1142/s0217984917400073.
Повний текст джерелаYang, Hsin-Chia, Sung-Ching Chi, and Wen-Shiang Liao. "Comparison of Fitting Current–Voltage Characteristics Curves of FinFET Transistors with Various Fixed Parameters." Applied Sciences 12, no. 20 (October 18, 2022): 10519. http://dx.doi.org/10.3390/app122010519.
Повний текст джерелаChatterjee, A., S. W. Aur, T. Niuya, P. Yang, and J. A. Seitchik. "Failure in CMOS circuits induced by hot carriers in multi-gate transistors." IEEE Electron Device Letters 9, no. 11 (November 1988): 564–66. http://dx.doi.org/10.1109/55.9277.
Повний текст джерелаNitayama, A., F. Horiguchi, H. Takato, N. Okabe, K. Sunouchi, K. Hieda, and F. Masuoka. "High speed and compact CMOS circuits with multi-pillar surrounding gate transistors." IEEE Transactions on Electron Devices 36, no. 11 (November 1989): 2605–6. http://dx.doi.org/10.1109/16.43705.
Повний текст джерелаJian, Jhang-Jie, Hsin-Ying Lee, Edward-Yi Chang, and Ching-Ting Lee. "Investigation of Multi-Mesa-Channel-Structured AlGaN/GaN MOSHEMTs with SiO2 Gate Oxide Layer." Coatings 11, no. 12 (December 3, 2021): 1494. http://dx.doi.org/10.3390/coatings11121494.
Повний текст джерелаToral-Lopez, A., F. Pasadas, E. G. Marin, A. Medina-Rull, J. M. Gonzalez-Medina, F. G. Ruiz, D. Jiménez, and A. Godoy. "Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors." Nanoscale Advances 3, no. 8 (2021): 2377–82. http://dx.doi.org/10.1039/d0na00953a.
Повний текст джерелаYang, Ling, Hao Lu, Xuerui Niu, Meng Zhang, Chunzhou Shi, Longge Deng, Bin Hou, et al. "Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact." Journal of Applied Physics 132, no. 16 (October 28, 2022): 165703. http://dx.doi.org/10.1063/5.0106827.
Повний текст джерелаSehgal, Amit, Tina Mangla, Mridula Gupta, and R. S. Gupta. "Multi-material gate poly-crystalline thin film transistors: Modeling and simulation for an improved gate transport efficiency." Thin Solid Films 516, no. 8 (February 2008): 2162–70. http://dx.doi.org/10.1016/j.tsf.2007.06.119.
Повний текст джерелаLiu, Bo-Ying, Gao-Sheng Wang, Ming-Lang Tseng, Zhi-Gang Li, and Kuo-Jui Wu. "New Energy Empowerment Using Kernel Principal Component Analysis in Insulated Gate Bipolar Transistors Module Monitoring." Sustainability 10, no. 10 (October 11, 2018): 3644. http://dx.doi.org/10.3390/su10103644.
Повний текст джерелаKushwah, Preeti, Saurabh Khandelwal, and Shyam Akashe. "Multi-Threshold Voltage CMOS Design for Low-Power Half Adder Circuit." International Journal of Nanoscience 14, no. 05n06 (October 2015): 1550022. http://dx.doi.org/10.1142/s0219581x15500222.
Повний текст джерелаOpoku, C., K. F. Hoettges, M. P. Hughes, V. Stolojan, S. R. P. Silva, and M. Shkunov. "Solution processable multi-channel ZnO nanowire field-effect transistors with organic gate dielectric." Nanotechnology 24, no. 40 (September 12, 2013): 405203. http://dx.doi.org/10.1088/0957-4484/24/40/405203.
Повний текст джерелаCho, Kyungjune, Tae-Young Kim, Woanseo Park, Juhun Park, Dongku Kim, Jingon Jang, Hyunhak Jeong, Seunghun Hong, and Takhee Lee. "Gate-bias stress-dependent photoconductive characteristics of multi-layer MoS2 field-effect transistors." Nanotechnology 25, no. 15 (March 18, 2014): 155201. http://dx.doi.org/10.1088/0957-4484/25/15/155201.
Повний текст джерелаPark, Mingyo, and Byung-Wook Min. "X-band T/R switch with body-floating multi-gate PDSOI NMOS transistors." Solid-State Electronics 141 (March 2018): 69–73. http://dx.doi.org/10.1016/j.sse.2017.12.009.
Повний текст джерелаConde, J., I. Mejia, F. S. Aguirre-Tostado, C. Young, and M. A. Quevedo-Lopez. "Design considerations for II–VI multi-gate transistors: the case of cadmium sulfide." Semiconductor Science and Technology 29, no. 4 (February 20, 2014): 045006. http://dx.doi.org/10.1088/0268-1242/29/4/045006.
Повний текст джерелаLima, Vitor Gonçalves, Guilherme Paim, Rodrigo Wuerdig, Leandro Mateus Giacomini Rocha, Leomar Da Rosa Júnior, Felipe Marques, Vinicius Valduga, Eduardo Costa, Rafael Soares, and Sergio Bampi. "Enhancing Side Channel Attack-Resistance of the STTL Combining Multi-Vt Transistors with Capacitance and Current Paths Counterbalancing." Journal of Integrated Circuits and Systems 15, no. 1 (May 26, 2020): 1–11. http://dx.doi.org/10.29292/jics.v15i1.100.
Повний текст джерелаTsai, Meng-Ju, Kang-Hui Peng, Chong-Jhe Sun, Siao-Cheng Yan, Chieng-Chung Hsu, Yu-Ru Lin, Yu-Hsien Lin, and Yung-Chun Wu. "Fabrication and Characterization of Stacked Poly-Si Nanosheet With Gate-All-Around and Multi-Gate Junctionless Field Effect Transistors." IEEE Journal of the Electron Devices Society 7 (2019): 1133–39. http://dx.doi.org/10.1109/jeds.2019.2952150.
Повний текст джерела