Статті в журналах з теми "MoTe2-MoS2"
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Zhu, Xuesong, Dahao Wu, Shengzhi Liang, and Jing Liu. "Strain insensitive flexible photodetector based on molybdenum ditelluride/molybdenum disulfide heterostructure." Nanotechnology 34, no. 15 (February 3, 2023): 155502. http://dx.doi.org/10.1088/1361-6528/acb359.
Повний текст джерелаGrajcarova, Liliana, Michaela Riflikova, Roman Martonak, and Erio Tosatti. "Structural and electronic behaviour of MoS2, MoSe2and MoTe2at high pressure." Acta Crystallographica Section A Foundations and Advances 70, a1 (August 5, 2014): C1619. http://dx.doi.org/10.1107/s2053273314083806.
Повний текст джерелаPark, Do-Hyun, and Hyo Chan Lee. "Photogating Effect of Atomically Thin Graphene/MoS2/MoTe2 van der Waals Heterostructures." Micromachines 14, no. 1 (January 4, 2023): 140. http://dx.doi.org/10.3390/mi14010140.
Повний текст джерелаHibino, Y., S. Ishihara, N. Sawamoto, T. Ohashi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudo, H. Wakabayashi, and A. Ogura. "Investigation on MoS2(1-x)Te2x Mixture Alloy Fabricated by Co-sputtering Deposition." MRS Advances 2, no. 29 (2017): 1557–62. http://dx.doi.org/10.1557/adv.2017.125.
Повний текст джерелаChikukwa, Evernice, Edson Meyer, Johannes Mbese, and Nyengerai Zingwe. "Colloidal Synthesis and Characterization of Molybdenum Chalcogenide Quantum Dots Using a Two-Source Precursor Pathway for Photovoltaic Applications." Molecules 26, no. 14 (July 9, 2021): 4191. http://dx.doi.org/10.3390/molecules26144191.
Повний текст джерелаZazpe, Raul, Hanna Sopha, Jhonatan Rodriguez Pereira, and Jan M. Macak. "Electrocatalytic Applications of 2D Molybdenum Dichalcogenides By Atomic Layer Deposition." ECS Meeting Abstracts MA2022-02, no. 31 (October 9, 2022): 1150. http://dx.doi.org/10.1149/ma2022-02311150mtgabs.
Повний текст джерелаMirabelli, Gioele, Conor McGeough, Michael Schmidt, Eoin K. McCarthy, Scott Monaghan, Ian M. Povey, Melissa McCarthy, et al. "Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2." Journal of Applied Physics 120, no. 12 (September 28, 2016): 125102. http://dx.doi.org/10.1063/1.4963290.
Повний текст джерелаBalaji, Yashwanth, Dan Mocuta, Guido Groeseneken, Quentin Smets, Cesar Javier Lockhart De La Rosa, Anh Khoa Augustin Lu, Daniele Chiappe, et al. "Tunneling Transistors Based on MoS2/MoTe2 Van der Waals Heterostructures." IEEE Journal of the Electron Devices Society 6 (2018): 1048–55. http://dx.doi.org/10.1109/jeds.2018.2815781.
Повний текст джерелаLi, Shangdong, Zhenbei He, Yizhen Ke, Junxiong Guo, Tiedong Cheng, Tianxun Gong, Yuan Lin, Zhiwei Liu, Wen Huang, and Xiaosheng Zhang. "Ultra-sensitive self-powered photodetector based on vertical MoTe2/MoS2 heterostructure." Applied Physics Express 13, no. 1 (December 17, 2019): 015007. http://dx.doi.org/10.7567/1882-0786/ab5e72.
Повний текст джерелаPan, Shudi, Pavel Valencia-Acuna, Weijin Kong, Jianhua Liu, Xiaohui Ge, Wanfeng Xie, and Hui Zhao. "Efficient interlayer electron transfer in a MoTe2/WS2/MoS2 trilayer heterostructure." Applied Physics Letters 118, no. 25 (June 21, 2021): 253106. http://dx.doi.org/10.1063/5.0047909.
Повний текст джерелаBurton, B. P., and A. K. Singh. "Prediction of entropy stabilized incommensurate phases in the system MoS2−MoTe2." Journal of Applied Physics 120, no. 15 (October 21, 2016): 155101. http://dx.doi.org/10.1063/1.4964868.
Повний текст джерелаHu, Ruixue, Enxiu Wu, Yuan Xie, and Jing Liu. "Multifunctional anti-ambipolar p-n junction based on MoTe2/MoS2 heterostructure." Applied Physics Letters 115, no. 7 (August 12, 2019): 073104. http://dx.doi.org/10.1063/1.5109221.
Повний текст джерелаYao, Hao, Enxiu Wu, and Jing Liu. "Frequency doubler based on a single MoTe2/MoS2 anti-ambipolar heterostructure." Applied Physics Letters 117, no. 12 (September 21, 2020): 123103. http://dx.doi.org/10.1063/5.0018882.
Повний текст джерелаFang, Qiyi, Zhepeng Zhang, Qingqing Ji, Siya Zhu, Yue Gong, Yu Zhang, Jianping Shi, et al. "Transformation of monolayer MoS2 into multiphasic MoTe2: Chalcogen atom-exchange synthesis route." Nano Research 10, no. 8 (April 20, 2017): 2761–71. http://dx.doi.org/10.1007/s12274-017-1480-z.
Повний текст джерелаWang, Feng, Lei Yin, Zhen Xing Wang, Kai Xu, Feng Mei Wang, Tofik Ahmed Shifa, Yun Huang, Chao Jiang, and Jun He. "Configuration-Dependent Electrically Tunable Van der Waals Heterostructures Based on MoTe2/MoS2." Advanced Functional Materials 26, no. 30 (May 30, 2016): 5499–506. http://dx.doi.org/10.1002/adfm.201601349.
Повний текст джерелаChen, Yan, Xudong Wang, Guangjian Wu, Zhen Wang, Hehai Fang, Tie Lin, Shuo Sun, et al. "High-Performance Photovoltaic Detector Based on MoTe2 /MoS2 Van der Waals Heterostructure." Small 14, no. 9 (January 22, 2018): 1703293. http://dx.doi.org/10.1002/smll.201703293.
Повний текст джерелаQuan, Chenjing, Chunhui Lu, Chuan He, Xiang Xu, Yuanyuan Huang, Qiyi Zhao, and Xinlong Xu. "Band Alignment of MoTe2 /MoS2 Nanocomposite Films for Enhanced Nonlinear Optical Performance." Advanced Materials Interfaces 6, no. 5 (January 13, 2019): 1801733. http://dx.doi.org/10.1002/admi.201801733.
Повний текст джерелаHibino, Yusuke, Kota Yamazaki, Yusuke Hashimoto, Yuya Oyanagi, Naomi Sawamoto, Hideaki Machida, Masato Ishikawa, Hiroshi Sudo, Hitoshi Wakabayashi, and Atsushi Ogura. "The Physical and Chemical Properties of MoS2(1-x)Te2x Alloy Synthesized by Co-sputtering and Chalcogenization and Their Dependence on Fabrication Conditions." MRS Advances 5, no. 31-32 (2020): 1635–42. http://dx.doi.org/10.1557/adv.2020.170.
Повний текст джерелаWang, Jinhua, and Gyaneshwar P. Srivastava. "Tunable Electronic Properties of Lateral Monolayer Transition Metal Dichalcogenide Superlattice Nanoribbons." Nanomaterials 11, no. 2 (February 19, 2021): 534. http://dx.doi.org/10.3390/nano11020534.
Повний текст джерелаDiCamillo, Kyle, Sergiy Krylyuk, Wendy Shi, Albert Davydov, and Makarand Paranjape. "Automated Mechanical Exfoliation of MoS2 and MoTe2 Layers for Two-Dimensional Materials Applications." IEEE Transactions on Nanotechnology 18 (2019): 144–48. http://dx.doi.org/10.1109/tnano.2018.2868672.
Повний текст джерелаDuong, Ngoc Thanh, Juchan Lee, Seungho Bang, Chulho Park, Seong Chu Lim, and Mun Seok Jeong. "Modulating the Functions of MoS2/MoTe2 van der Waals Heterostructure via Thickness Variation." ACS Nano 13, no. 4 (April 2, 2019): 4478–85. http://dx.doi.org/10.1021/acsnano.9b00014.
Повний текст джерелаWu, Enxiu, Yuan Xie, Qingzhou Liu, Xiaodong Hu, Jing Liu, Daihua Zhang, and Chongwu Zhou. "Photoinduced Doping To Enable Tunable and High-Performance Anti-Ambipolar MoTe2/MoS2 Heterotransistors." ACS Nano 13, no. 5 (April 11, 2019): 5430–38. http://dx.doi.org/10.1021/acsnano.9b00201.
Повний текст джерелаHussain, Sajjad, Supriya A. Patil, Dhanasekaran Vikraman, Iqra Rabani, Alvira Ayoub Arbab, Sung Hoon Jeong, Hyun-Seok Kim, Hyosung Choi, and Jongwan Jung. "Enhanced electrocatalytic properties in MoS2/MoTe2 hybrid heterostructures for dye-sensitized solar cells." Applied Surface Science 504 (February 2020): 144401. http://dx.doi.org/10.1016/j.apsusc.2019.144401.
Повний текст джерелаFan, Xaiofeng, David J. Singh, Q. Jiang, and W. T. Zheng. "Pressure evolution of the potential barriers of phase transition of MoS2, MoSe2 and MoTe2." Physical Chemistry Chemical Physics 18, no. 17 (2016): 12080–85. http://dx.doi.org/10.1039/c6cp00715e.
Повний текст джерелаDeGregorio, Zachary P., Youngdong Yoo, and James E. Johns. "Aligned MoO2/MoS2 and MoO2/MoTe2 Freestanding Core/Shell Nanoplates Driven by Surface Interactions." Journal of Physical Chemistry Letters 8, no. 7 (March 24, 2017): 1631–36. http://dx.doi.org/10.1021/acs.jpclett.7b00307.
Повний текст джерелаLi, Chao, Xiao Yan, Xiongfei Song, Wenzhong Bao, Shijin Ding, David Wei Zhang, and Peng Zhou. "WSe2/MoS2 and MoTe2/SnSe2 van der Waals heterostructure transistors with different band alignment." Nanotechnology 28, no. 41 (September 13, 2017): 415201. http://dx.doi.org/10.1088/1361-6528/aa810f.
Повний текст джерелаZribi, Rayhane, and Giovanni Neri. "Mo-Based Layered Nanostructures for the Electrochemical Sensing of Biomolecules." Sensors 20, no. 18 (September 21, 2020): 5404. http://dx.doi.org/10.3390/s20185404.
Повний текст джерелаAhuja, Ushma, Ritu Joshi, D. C. Kothari, Harpal Tiwari, and K. Venugopalan. "Optical Response of Mixed Molybdenum Dichalcogenides for Solar Cell Applications Using the Modified Becke–Johnson Potential." Zeitschrift für Naturforschung A 71, no. 3 (March 1, 2016): 213–23. http://dx.doi.org/10.1515/zna-2015-0393.
Повний текст джерелаDu, Wanying, Xionghui Jia, Zhixuan Cheng, Wanjing Xu, Yanping Li, and Lun Dai. "Low-power-consumption CMOS inverter array based on CVD-grown p-MoTe2 and n-MoS2." iScience 24, no. 12 (December 2021): 103491. http://dx.doi.org/10.1016/j.isci.2021.103491.
Повний текст джерелаDing, Yao, Nan Zhou, Lin Gan, Xingxu Yan, Ruizhe Wu, Irfan H. Abidi, Aashir Waleed, et al. "Stacking-mode confined growth of 2H-MoTe2/MoS2 bilayer heterostructures for UV–vis–IR photodetectors." Nano Energy 49 (July 2018): 200–208. http://dx.doi.org/10.1016/j.nanoen.2018.04.055.
Повний текст джерелаShang, Ju Ying, Michael J. Moody, Jiazhen Chen, Sergiy Krylyuk, Albert V. Davydov, Tobin J. Marks, and Lincoln J. Lauhon. "In Situ Transport Measurements Reveal Source of Mobility Enhancement of MoS2 and MoTe2 during Dielectric Deposition." ACS Applied Electronic Materials 2, no. 5 (April 21, 2020): 1273–79. http://dx.doi.org/10.1021/acsaelm.0c00085.
Повний текст джерелаZhang, Kenan, Tianning Zhang, Guanghui Cheng, Tianxin Li, Shuxia Wang, Wei Wei, Xiaohao Zhou, et al. "Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures." ACS Nano 10, no. 3 (March 9, 2016): 3852–58. http://dx.doi.org/10.1021/acsnano.6b00980.
Повний текст джерелаGeng, W. T., V. Wang, Y. C. Liu, T. Ohno, and J. Nara. "Moiré Potential, Lattice Corrugation, and Band Gap Spatial Variation in a Twist-Free MoTe2/MoS2 Heterobilayer." Journal of Physical Chemistry Letters 11, no. 7 (March 18, 2020): 2637–46. http://dx.doi.org/10.1021/acs.jpclett.0c00605.
Повний текст джерелаChen, Yan, Xudong Wang, Guangjian Wu, Zhen Wang, Hehai Fang, Tie Lin, Shuo Sun, et al. "Optoelectronics: High-Performance Photovoltaic Detector Based on MoTe2 /MoS2 Van der Waals Heterostructure (Small 9/2018)." Small 14, no. 9 (March 2018): 1870038. http://dx.doi.org/10.1002/smll.201870038.
Повний текст джерелаWang, Bin, Shengxue Yang, Cong Wang, Minghui Wu, Li Huang, Qian Liu, and Chengbao Jiang. "Enhanced current rectification and self-powered photoresponse in multilayer p-MoTe2/n-MoS2 van der Waals heterojunctions." Nanoscale 9, no. 30 (2017): 10733–40. http://dx.doi.org/10.1039/c7nr03445h.
Повний текст джерелаDuong, Ngoc Thanh, Seungho Bang, Seung Mi Lee, Dang Xuan Dang, Dong Hoon Kuem, Juchan Lee, Mun Seok Jeong, and Seong Chu Lim. "Parameter control for enhanced peak-to-valley current ratio in a MoS2/MoTe2 van der Waals heterostructure." Nanoscale 10, no. 26 (2018): 12322–29. http://dx.doi.org/10.1039/c8nr01711e.
Повний текст джерелаCristiano, Michele N., Ted V. Tsoulos, and Laura Fabris. "Quantifying and optimizing photocurrent via optical modeling of gold nanostar-, nanorod-, and dimer-decorated MoS2 and MoTe2." Journal of Chemical Physics 152, no. 1 (January 7, 2020): 014705. http://dx.doi.org/10.1063/1.5127279.
Повний текст джерелаAmory, C., J. C. Bernède, and N. Hamdadou. "A study of textured non-stoichiometric MoTe2 thin films used as substrates for textured stoichiometric MoS2 thin films." Vacuum 72, no. 4 (January 2004): 351–61. http://dx.doi.org/10.1016/j.vacuum.2003.09.001.
Повний текст джерелаAhn, Jongtae, Ji-Hoon Kang, Jihoon Kyhm, Hyun Tae Choi, Minju Kim, Dae-Hwan Ahn, Dae-Yeon Kim, et al. "Self-Powered Visible–Invisible Multiband Detection and Imaging Achieved Using High-Performance 2D MoTe2/MoS2 Semivertical Heterojunction Photodiodes." ACS Applied Materials & Interfaces 12, no. 9 (February 10, 2020): 10858–66. http://dx.doi.org/10.1021/acsami.9b22288.
Повний текст джерелаKhan, Md Azmot Ullah, Naheem Olakunle Adesina, and Jian Xu. "Near Unity Absorbance and Photovoltaic Properties of TMDC/Gold Heterojunction for Solar Cell Application." Key Engineering Materials 918 (April 25, 2022): 97–105. http://dx.doi.org/10.4028/p-uz62m4.
Повний текст джерелаKhan, Md Azmot Ullah, Naheem Olakunle Adesina, and Jian Xu. "Near Unity Absorbance and Photovoltaic Properties of TMDC/Gold Heterojunction for Solar Cell Application." Key Engineering Materials 918 (April 25, 2022): 97–105. http://dx.doi.org/10.4028/p-uz62m4.
Повний текст джерелаLate, Dattatray J., and Claudia Wiemer. "Advances in low dimensional and 2D materials." AIP Advances 12, no. 11 (November 1, 2022): 110401. http://dx.doi.org/10.1063/5.0129120.
Повний текст джерелаGomes, Anderson S. L., Cecília L. A. V. Campos, Cid B. de Araújo, Melissa Maldonado, Manoel L. da Silva-Neto, Ali M. Jawaid, Robert Busch, and Richard A. Vaia. "Intensity-Dependent Optical Response of 2D LTMDs Suspensions: From Thermal to Electronic Nonlinearities." Nanomaterials 13, no. 15 (August 7, 2023): 2267. http://dx.doi.org/10.3390/nano13152267.
Повний текст джерелаWang, Yaqian, Yongli Shen, Xiong Xiao, Linxiu Dai, Shuang Yao, and Changhua An. "Topology conversion of 1T MoS2 to S-doped 2H-MoTe2 nanosheets with Te vacancies for enhanced electrocatalytic hydrogen evolution." Science China Materials 64, no. 9 (March 29, 2021): 2202–11. http://dx.doi.org/10.1007/s40843-020-1612-y.
Повний текст джерелаXie, Yuan, Enxiu Wu, Shuangqing Fan, Guangyu Geng, Xiaodong Hu, Linyan Xu, Sen Wu, Jing Liu, and Daihua Zhang. "Modulation of MoTe2/MoS2 van der Waals heterojunctions for multifunctional devices using N2O plasma with an opposite doping effect." Nanoscale 13, no. 16 (2021): 7851–60. http://dx.doi.org/10.1039/d0nr08814e.
Повний текст джерелаDiaz, Horacio Coy, Yujing Ma, Redhouane Chaghi, and Matthias Batzill. "High density of (pseudo) periodic twin-grain boundaries in molecular beam epitaxy-grown van der Waals heterostructure: MoTe2/MoS2." Applied Physics Letters 108, no. 19 (May 9, 2016): 191606. http://dx.doi.org/10.1063/1.4949559.
Повний текст джерелаPezeshki, Atiye, Seyed Hossein Hosseini Shokouh, Pyo Jin Jeon, Iman Shackery, Jin Sung Kim, Il-Kwon Oh, Seong Chan Jun, Hyungjun Kim та Seongil Im. "Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors". ACS Nano 10, № 1 (4 грудня 2015): 1118–25. http://dx.doi.org/10.1021/acsnano.5b06419.
Повний текст джерелаCho, Yongjae, Ji Hoon Park, Minju Kim, Yeonsu Jeong, Sanghyuck Yu, June Yeong Lim, Yeonjin Yi, and Seongil Im. "Impact of Organic Molecule-Induced Charge Transfer on Operating Voltage Control of Both n-MoS2 and p-MoTe2 Transistors." Nano Letters 19, no. 4 (March 11, 2019): 2456–63. http://dx.doi.org/10.1021/acs.nanolett.9b00019.
Повний текст джерелаCaturello, Naidel A. M. S., Rafael Besse, Augusto C. H. Da Silva, Diego Guedes-Sobrinho, Matheus P. Lima, and Juarez L. F. Da Silva. "Ab Initio Investigation of Atomistic Insights into the Nanoflake Formation of Transition-Metal Dichalcogenides: The Examples of MoS2, MoSe2, and MoTe2." Journal of Physical Chemistry C 122, no. 47 (November 2, 2018): 27059–69. http://dx.doi.org/10.1021/acs.jpcc.8b07127.
Повний текст джерелаVaradwaj, Pradeep, Helder Marques, Arpita Varadwaj, and Koichi Yamashita. "Chalcogen···Chalcogen Bonding in Molybdenum Disulfide, Molybdenum Diselenide and Molybdenum Ditelluride Dimers as Prototypes for a Basic Understanding of the Local Interfacial Chemical Bonding Environment in 2D Layered Transition Metal Dichalcogenides." Inorganics 10, no. 1 (January 12, 2022): 11. http://dx.doi.org/10.3390/inorganics10010011.
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