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Статті в журналах з теми "MoS2 multilayers"
Fraih, Ali Jabbar, and Zainab Ali Hrbe. "Enhanced photocatalytic performance of molybdenum disulfide-copper oxide nanoparticles photoanodes." European Physical Journal Applied Physics 96, no. 3 (December 2021): 30102. http://dx.doi.org/10.1051/epjap/2021210192.
Повний текст джерелаLince, Jeffrey R., Michael R. Hilton, and Arun S. Bommannavar. "Metal incorporation in sputter-deposited MoS2 films studied by extended x-ray absorption fine structure." Journal of Materials Research 10, no. 8 (August 1995): 2091–105. http://dx.doi.org/10.1557/jmr.1995.2091.
Повний текст джерелаVaknin, Yonatan, Ronen Dagan, and Yossi Rosenwaks. "Pinch-Off Formation in Monolayer and Multilayers MoS2 Field-Effect Transistors." Nanomaterials 9, no. 6 (June 14, 2019): 882. http://dx.doi.org/10.3390/nano9060882.
Повний текст джерелаShakya, Jyoti, Gayathri H N, and Arindam Ghosh. "Defects-assisted piezoelectric response in liquid exfoliated MoS2 nanosheets." Nanotechnology 33, no. 7 (November 26, 2021): 075710. http://dx.doi.org/10.1088/1361-6528/ac368b.
Повний текст джерелаPanasci, Salvatore E., Antal Koos, Emanuela Schilirò, Salvatore Di Franco, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, et al. "Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization." Nanomaterials 12, no. 2 (January 6, 2022): 182. http://dx.doi.org/10.3390/nano12020182.
Повний текст джерелаJoo, Piljae, Kiyoung Jo, Gwanghyun Ahn, Damien Voiry, Hu Young Jeong, Sunmin Ryu, Manish Chhowalla, and Byeong-Su Kim. "Functional Polyelectrolyte Nanospaced MoS2 Multilayers for Enhanced Photoluminescence." Nano Letters 14, no. 11 (October 2, 2014): 6456–62. http://dx.doi.org/10.1021/nl502883a.
Повний текст джерелаWei, Yuefan, Van-Thai Tran, Chenyang Zhao, Hongfei Liu, Junhua Kong, and Hejun Du. "Robust Photodetectable Paper from Chemically Exfoliated MoS2–MoO3 Multilayers." ACS Applied Materials & Interfaces 11, no. 24 (June 5, 2019): 21445–53. http://dx.doi.org/10.1021/acsami.9b01515.
Повний текст джерелаLi, Wei, Mahboobeh Shahbazi, Kaijian Xing, Tuquabo Tesfamichael, Nunzio Motta, and Dong-Chen Qi. "Highly Sensitive NO2 Gas Sensors Based on MoS2@MoO3 Magnetic Heterostructure." Nanomaterials 12, no. 8 (April 11, 2022): 1303. http://dx.doi.org/10.3390/nano12081303.
Повний текст джерелаDagan, R., Y. Vaknin, A. Henning, J. Y. Shang, L. J. Lauhon, and Y. Rosenwaks. "Two-dimensional charge carrier distribution in MoS2 monolayer and multilayers." Applied Physics Letters 114, no. 10 (March 11, 2019): 101602. http://dx.doi.org/10.1063/1.5078711.
Повний текст джерелаJiao, Lei, Yuehui Wang, Yusong Zhi, Wei Cui, Zhengwei Chen, Xiao Zhang, Wenjing Jie, and Zhenping Wu. "Fabrication and Characterization of Two-Dimensional Layered MoS2 Thin Films by Pulsed Laser Deposition." Advances in Condensed Matter Physics 2018 (2018): 1–5. http://dx.doi.org/10.1155/2018/3485380.
Повний текст джерелаДисертації з теми "MoS2 multilayers"
Leonavičius, Romas. "Melizmų sintezė dirbtinių neuronų tinklais." Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2007. http://vddb.library.lt/obj/LT-eLABa-0001:E.02~2006~D_20070112_145929-44906.
Повний текст джерелаWu, Tsuei-Shin, and 吳翠心. "Optoelectronic Properties of MoS2 Monolayer/Multilayer Lateral Heterojunction." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/13384373949663996574.
Повний текст джерела國立臺灣大學
應用物理所
102
The spin/valley degree of freedom and the bandgap in visible light range make MoS2 a promising material for optoelectronic applications. Several groups have reported construction of p-n junction based on Transition-Metal Dichalcogenide (TMD) recently. In this thesis, a new architecture – lateal heterojunction – based on MoS2 is demonstrated. The optoelectronic properties of the lateal heterostructure is determined by the difference of intrinsic band structures of monolalyer and multilayer MoS2. The lateralheterojunction devices are realized by choosing monolayer/multilayer MoS2 after mechanical exfoliation. The existence of built-in field is examined by Kelvin Probe Force Microscope (KPFM), photocurrent mapping at off state, bias-voltage dependent photocurrent mapping, and the asymmetric J-V curve. The photovoltaic effect is observed by performing photocurrent mapping and J-V curve under illumination. Prompt optical switching with robust performance are observed. From the back-gate voltage dependent photocurrent mapping and J-V curves, we achieve the modulation of band alignment by global gating. We observed the enhanced photocurrent at the interface as back-gate voltage lowered and the J-V curve grew linear as back-gate voltage increased, both suggesting that the the Fermi level of monolayer MoS2 is more sensitive to the back-gate voltage. The realization of the lateral heterojunction based on the novel two-dimensional TMD materials and the band alignment modulation by global gating open the avenue to both physical research and technological applications.
Tang, Chih-che, and 湯志哲. "Electronic Transport Properties in MoSe2 Multilayer Nanostructures." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/09877592963228272422.
Повний текст джерела國立臺灣科技大學
電子工程系
101
The electronic transport properties of the molybdenum diselenide (MoSe2) layer semiconductor with nanometer and micrometer –thicknesses have been investigated. It is found that the very thin multilayer MoSe2 with thickness at 7?{88 nm exhibit much higher average conductivity at 440?b100 S/cm, which is over three orders of magnitude higher than the bulk counterparts. The statistic conductivity values showing significant thickness dependence are also observed. In addition, by the temperature-dependent measurement, the nanometer-thick MoSe2 layer crystals reveal weak semiconducting behavior with very low activation energies at 6?{11 meV which are relatively lower than those of the micrometer-sized samples. The potential presence of the higher surface conductivity induced by the donor-like surface states is proposed to explain the highly conductive nature and its thickness dependence in this layer semiconductor.
Yang, Cheng-Han, and 楊昌翰. "Fabrication of Multilayer Ge Quantum-Dots MOS Photodetectors." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/45ygh7.
Повний текст джерела國立中央大學
電機工程研究所
97
In this thesis, multilayer Ge quantum-dots (QDs) have been fabricated and applied to photodetectors. Since the Si will be preferentially oxidized during the high-temperature annealing of SiGeO alloy and the segregated Ge atom will pile-up along the SiO2/SiON interface, it could be expected that the Ge quantum-dots could be tentatively formed with the Ge atom segregation and agglomeration. The QDs’ size depend on annealing process conditions, including temperature, ambient, and duration. The multilayer a-SiGeO/a-SiON thin-films have been prepared with a plasma-enhanced chemical vapor deposition system, then with a thermal annealing for a-SiGeO/a-SiON thin-films, the multilayer, well-separated, and 2~8 nm-sized Ge QDs were obtained. The crystallinity of Ge quantum-dots has been checked with a Raman spectroscopy. Increasing the thickness of a-SiON was beneficial to the formation of upper Ge QD layer, and a more uniform density of multilayer Ge QDs was obtained. The metal-oxide-semiconductor (MOS) photodetector (PD) structures with multilayer Ge QDs embedded in oxide have been fabricated. From the obtained C-V hysteresis phenomena, the formation of Ge QDs and their charge storage effects were investigated. The obtainable memory window for MOS structure with multilayer Ge quantum-dots was 3.39 V. Increasing the oxide thickness was effective to decrease the PD dark current and obtained a higher ratio of hotocurrent to dark current of PD. A higher density of Ge QDs resulted in a higher photo-current, a better photo responsivity, and a blue-shift of peak response wavelength. Moreover, the amplified responsivity of PDs also can be seen in the spectra. The PD with a higher density of Ge QDs and a thinner oxide thickness could be used to detect the weak (0.02 mW) incident light effectively. By applying a large bias voltage or using a thinner oxide, the larger electric-field in the PD would increase the drift velocity of photo-generated carriers, and the response speed of PD became faster. The effect of device RC constant to rise-time and fall-time was significant. A large RC constant brought about the longer rise-time and fall-time and smaller response bandwidth.
Huang, Fei-Sheng, and 黃飛盛. "Growth of MoS2 and WS2 multilayer using Chemical Vapor Deposition and their Optical Characterization." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/23705526437337699353.
Повний текст джерела國立臺灣科技大學
電子工程系
103
The theme of this thesis is focused on the growth and analysis in the MoS2 and WS2 multilayer crystal on Quartz and Sapphire substrate grown by chemical vapor deposition (CVD). Detailed characterizations of the materials were carried out by using X-ray diffraction (XRD), Raman scattering, atomic force microscopy (AFM), and photoluminescence (PL) techniques. XRD analysis observe that MoS2/Sapphire is of c-plane (002) and MoO3 (002) peak, while dependent by growth time. The two main active modes A1g and E2g of bulk MoS2/WS2 in Raman spectrum are 408cm-1/420cm-1 and 382cm-1/355cm-1, respectively. The E2g mode corresponds to the sulfur atoms vibrating in one direction and the Molybdenum or tungsten atom in the other, while the A1g mode is a mode of the sulfur atoms vibrating out-of-plane. When the thickness of MoS2 in multilayer (less ~five layers), these two modes becomes thickness dependent. The separation between the A1g and the E2g is smaller than that in bulk. Illustrated by AFM, shows the thickness of triangle WS2 flake increases with increasing growth time. Whereas, such growth mechanism are not observed in MoS2.The optical properties of WS2 and MoS2 grown on sapphire were also investigated by PL. The luminescence detected by (PL) indicates the transition is direct behavior with multilayer (less than five layers) thickness. The room temperature direct transition of WS2 and MoS2 were determined to be 1.99 eV and 1.85 eV.
Peng, Chao-Wun, and 彭朝文. "Fabrication of Multilayer Ge Nanocrystal and Its Application in Floating-Dot MOS Capacitor." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/z24zc4.
Повний текст джерела國立中央大學
電機工程研究所
96
Abstract Since the Si will be preferentially oxidized during the high-temperature oxidation of SiGe alloy or annealing of SiGeO alloy and the segregated Ge atom will pile-up along the SiGe/SiO2 interface, it could be expected that the Ge nanocrystals would be tentatively formed with the Ge atom segregation and agglomeration. In this thesis, the multilayer a-SiGe/a-SiON, a-SiGe/a-SiN, and a-SiGeO/a-SiN thin-films have been prepared with a plasma enhanced chemical vapor deposition system, then with a thermal oxidation for a-SiGe/a-SiON and a-SiGe/a-SiN or a thermal annealing for a-SiGeO/a-SiN thin-films, the single /multilayer nano-meter scale Ge crystal dots have been obtained. The multilayer, well-separated, and 5 nm-sized Ge nanocrystals could be obtained with a thermal annealing technique. The crystallinity of Ge nanodots has been checked with a Raman spectroscopy. The metal-oxide-semiconductor (MOS) capacitors ( MOS-Cs ) with Ge nanocrystals embedded in oxide have been fabricated to investigate the charge trapping effect of Ge nanocrystals. A current spike phenomenon in I-V curve has been observed. This was ascribed to the transient current of hole charging from p-type Si substrate. In addition, the hysteresis phenomenon has also been observed in C-V measurement. This indicated that the charge storage effect resulted from the formed Ge nanocrystals. The highest obtainable memory window with multilayer Ge nanocrystals was 3 V. Furthermore, the charge storage effects have been investigated by using the C-V measurement at various frequencies.
Chakraborty, Biswanath. "Raman Spectroscopy Of Graphene And Graphene Analogue MoS2 Transistors." Thesis, 2012. http://hdl.handle.net/2005/2539.
Повний текст джерелаHou, Tzu-Ching, and 侯姿清. "Study of 1nm-oxide-equivalent-thickness La2O3 and HfO2 Multilayer Composite Oxides on In0.53Ga0.47As for MOS Capacitor Application." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/7z75t4.
Повний текст джерела國立交通大學
光電系統研究所
103
In this study, La2O3 and HfO2 were used as gate oxides on InGaAs metal oxide semiconductor (MOS) capacitor. There are many advantages of Hafnium–Lanthanum-Based gate dielectrics, such as high dielectric constant, large energy bandgap and high crystallization temperature, etc. These results suggest that the (Hf–La)Ox system will become a potential candidate for advanced CMOS applications The composite oxide was formed by MBD depositing 4 layers of La2O3 (1nm)/ HfO2(1nm) and 8 layers of La2O3 (0.5nm)/ HfO2(0.5nm) on InGaAs with varied post deposition annealing (PDA) temperatures. We have the characterized properties of the La2O3/ HfO2 on InGaAs MOS structure by using XPS, TEM, EDX and C-V measurement. The design of the stack structure can improve the capacitance meanwhile prevent the diffusion between the oxide and the semiconductor. Finally, we have demonstrated the 1.2-nm-thick capacitance equivalent thickness in the La2O3/HfO2/n-InGaAs MOS capacitors with good interface properties and small hysteresis of 78mV.
Книги з теми "MoS2 multilayers"
Bianconi, Ginestra. Multilayer Networks. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198753919.001.0001.
Повний текст джерелаBianconi, Ginestra. The Mathematical Definition. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198753919.003.0005.
Повний текст джерелаBianconi, Ginestra. Basic Structural Properties. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198753919.003.0006.
Повний текст джерелаBianconi, Ginestra. Epidemic Spreading. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198753919.003.0013.
Повний текст джерелаBianconi, Ginestra. Centrality Measures. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198753919.003.0009.
Повний текст джерелаBrataas, A., Y. Tserkovnyak, G. E. W. Bauer, and P. J. Kelly. Spin pumping and spin transfer. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198787075.003.0008.
Повний текст джерелаStucky, Kirk J., and Jennifer Stevenson Jutte, eds. Critical Care Psychology and Rehabilitation. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780190077013.001.0001.
Повний текст джерелаShemtov, Noam. Beyond the Code. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198716792.001.0001.
Повний текст джерелаCapp, Bernard. British Slaves and Barbary Corsairs, 1580-1750. Oxford University Press, 2022. http://dx.doi.org/10.1093/oso/9780192857378.001.0001.
Повний текст джерелаAlonso, Paul. Satiric TV in the Americas. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780190636500.001.0001.
Повний текст джерелаЧастини книг з теми "MoS2 multilayers"
Zhao, Zhilong, Xiaoling Zhong, Ting Ting Guo, Bing Wu, Li Wen, Liangyi Deng, and Yuting Jiang. "Design of Microwave Triple-Frequency Multimeter Based on Multilayer MoS2." In New Developments of IT, IoT and ICT Applied to Agriculture, 47–54. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-5073-7_5.
Повний текст джерелаTiwari, Pranjala, and Ramesh Chandra. "In-situ Fabrication of Alternately Stacked MoS2/Au Multilayered Thin-Film Electrodes for Electrochemical Energy Storage Application." In Recent Research Trends in Energy Storage Devices, 105–14. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-6394-2_13.
Повний текст джерелаGangopadhyay, S., R. Acharya, A. K. Chattopadhyay, and S. Paul. "On deposition and characterisation of MoS x -Ti multilayer coating and performance evaluation in dry turning of aluminium alloy and steel." In Proceedings of the 36th International MATADOR Conference, 247–50. London: Springer London, 2010. http://dx.doi.org/10.1007/978-1-84996-432-6_57.
Повний текст джерелаCasanove, M. J., E. Snoeck, C. Penchenat, H. Ardhuin, R. Mamy, B. Raquet, M. D. Ortega, M. Goiran, A. R. Fert, and J. C. Ousset. "Microstructural studies and magneto-optic properties of Co/Au multilayers epitaxially grown on MoS2 substrates." In Small Scale Structures, 129–32. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82312-0.50082-7.
Повний текст джерелаBrandão, Jeovani, Marcos Vinicius Puydinger dos Santos, and Fanny Béron. "Stabilizing Zero-Field Skyrmions at Room-Temperature in Perpendicularly Magnetized Multilayers." In Magnetic Skyrmions. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.97179.
Повний текст джерелаS. Bhat, Ramesh. "Fabrication of Multi-Layered Zn-Fe Alloy Coatings for Better Corrosion Performance." In Liquid Metals [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.99630.
Повний текст джерелаTlili, Brahim. "Fretting Wear Performance of PVD Thin Films." In Tribology [Working Title]. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.93460.
Повний текст джерелаSaravana Kumar N. M., Tamilselvi S., Hariprasath K., Kavinya A., and Kaviyavarshini N. "Deep Learning Model for Diagnosing Diabetes." In Advances in Medical Technologies and Clinical Practice, 1–26. IGI Global, 2022. http://dx.doi.org/10.4018/978-1-6684-3791-9.ch001.
Повний текст джерелаMsimanga, Mandla. "Depth Profiling of Multilayer Thin Films Using Ion Beam Techniques." In Thin Film Deposition - Fundamentals, Processes, and Applications [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.105986.
Повний текст джерелаHassanin, Mohamed F., Abdullah M. Shoeb, and Aboul Ella Hassanien. "Designing Multilayer Feedforward Neural Networks Using Multi-Verse Optimizer." In Handbook of Research on Machine Learning Innovations and Trends, 1076–93. IGI Global, 2017. http://dx.doi.org/10.4018/978-1-5225-2229-4.ch048.
Повний текст джерелаТези доповідей конференцій з теми "MoS2 multilayers"
Sanaullah, Muhammad, and Masud H. Chowdhury. "Multilayer molybdenum disulfide (MoS2) based tunnel transistor." In 2015 IEEE International Symposium on Circuits and Systems (ISCAS). IEEE, 2015. http://dx.doi.org/10.1109/iscas.2015.7169050.
Повний текст джерелаDas, Saptarshi, and Joerg Appenzeller. "Evaluating the scalability of multilayer MoS2 transistors." In 2013 71st Annual Device Research Conference (DRC). IEEE, 2013. http://dx.doi.org/10.1109/drc.2013.6633839.
Повний текст джерелаGhobadi, Nayereh. "Molecular dynamics simulation of elastic properties of multilayer MoS2 and graphene/MoS2 heterostructure." In 2017 Iranian Conference on Electrical Engineering (ICEE). IEEE, 2017. http://dx.doi.org/10.1109/iraniancee.2017.7985466.
Повний текст джерелаKwak, Joon Young, Jeonghyun Hwang, Brian Calderon, Hussain Alsalman, Brian Schutter, and Michael G. Spencer. "Photothermal electric effect of multilayer MoS2-graphene heterojunction." In 2015 73rd Annual Device Research Conference (DRC). IEEE, 2015. http://dx.doi.org/10.1109/drc.2015.7175585.
Повний текст джерелаSanaullah, Muhammad, and Masud H. Chowdhury. "Subthreshold swing characteristics of multilayer MoS2 tunnel FET." In 2015 IEEE 58th International Midwest Symposium on Circuits and Systems (MWSCAS). IEEE, 2015. http://dx.doi.org/10.1109/mwscas.2015.7282101.
Повний текст джерелаSebastian, Suneetha, S. Sridhar, Rachel A. Jilin, Sandhya A. V. Varu, A. Sreejith, and S. Asokan. "Multilayer MoS2 Coated Etched Fiber Bragg Grating Based Hydrophone." In 2018 IEEE Sensors. IEEE, 2018. http://dx.doi.org/10.1109/icsens.2018.8589940.
Повний текст джерелаUllah, Muhammad S., and Masud H. Chowdhury. "Optimization of subthreshold swing for multilayer MoS2 tunnel transistor." In 2017 IEEE 60th International Midwest Symposium on Circuits and Systems (MWSCAS). IEEE, 2017. http://dx.doi.org/10.1109/mwscas.2017.8053090.
Повний текст джерелаOviroh, Peter Ozaveshe, Sunday Temitope Oyinbo, Sina Karimzadeh, and Tien-Chien Jen. "Multilayer Separation Effects on MoS2 Membranes in Water Desalination." In ASME 2021 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2021. http://dx.doi.org/10.1115/imece2021-69156.
Повний текст джерелаKo, P. J., T. V. Thu, H. Takahashi, A. Abderrahmane, T. Takamura, and A. Sandhu. "High precision laser induced etching of multilayered MoS2." In THE IRAGO CONFERENCE 2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4866622.
Повний текст джерелаYang, Rui, Zhenyu Li, and Philip X. L. Feng. "Molybdenum Disulfide (MoS2) Nanomechanical Resonators Integrated on Microchannels." In ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/ipack2015-48590.
Повний текст джерелаЗвіти організацій з теми "MoS2 multilayers"
Russo, Margherita, Fabrizio Alboni, Jorge Carreto Sanginés, Manlio De Domenico, Giuseppe Mangioni, Simone Righi, and Annamaria Simonazzi. The Changing Shape of the World Automobile Industry: A Multilayer Network Analysis of International Trade in Components and Parts. Institute for New Economic Thinking Working Paper Series, January 2022. http://dx.doi.org/10.36687/inetwp173.
Повний текст джерела