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Автор: Grafiati

Опубліковано: 6 вересня 2023

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1

Dong, Haocong, Junzhu Li, Mingguang Chen, Hongwei Wang, Xiaochuan Jiang, Yongguang Xiao, Bo Tian, and Xixiang Zhang. "High-throughput Production of ZnO-MoS2-Graphene Heterostructures for Highly Efficient Photocatalytic Hydrogen Evolution." Materials 12, no. 14 (July 11, 2019): 2233. http://dx.doi.org/10.3390/ma12142233.

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Анотація:

High-throughput production of highly efficient photocatalysts for hydrogen evolution remains a considerable challenge for materials scientists. Here, we produced extremely uniform high-quality graphene and molybdenum disulfide (MoS2) nanoplatelets through the electrochemical-assisted liquid-phase exfoliation, out of which we subsequently fabricated MoS2/graphene van der Waals heterostructures. Ultimately, zinc oxide (ZnO) nanoparticles were deposited into these two-dimensional heterostructures to produce an artificial ZnO/MoS2/graphene nanocomposite. This new composite experimentally exhibited an excellent photocatalytic efficiency in hydrogen evolution under the sunlight illumination ( λ > 400 n m ), owing to the extremely high electron mobilities in graphene nanoplatelets and the significant visible-light absorptions of MoS2. Moreover, due to the synergistic effects in MoS2 and graphene, the lifetime of excited carriers increased dramatically, which considerably improved the photocatalytic efficiency of the ZnO/MoS2/graphene heterostructure. We conclude that the novel artificial heterostructure presented here shows great potential for the high-efficient photocatalytic hydrogen generation and the high throughput production of visible-light photocatalysts for industrial applications.

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2

Xiao, Haodong, Lin Lin, Jia Zhu, Junxiong Guo, Yizhen Ke, Linna Mao, Tianxun Gong, Huanyu Cheng, Wen Huang, and Xiaosheng Zhang. "Highly sensitive and broadband photodetectors based on WSe₂/MoS₂ heterostructures with van der Waals contact electrodes." Applied Physics Letters 121, no. 2 (July 11, 2022): 023504. http://dx.doi.org/10.1063/5.0100191.

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A nanoscale photodetector is a crucial part of intelligent imaging and wireless communication devices. Building van der Waals (vdWs) heterostructures based on two-dimensional transition metal dichalcogenides is thought to be a smart approach for achieving nanoscale photodetectors. However, the pinning effect induced by surface states, defects, and metal-induced gap states during the fabrication process of vdWs heterostructures and contacting electrodes leads to a large Schottky barrier and consequently limits the photoresponse of vdWs heterostructures. In this study, a photodetector based on the WSe2/MoS2 heterostructure with graphene (Gr)/indium tin oxide (ITO) hybrid electrodes has been fabricated. The vdWs contacts established between the exfoliated graphene layers and WSe2/MoS2 heterostructure are able to get rid of lattice damages caused by atom bombardment during the deposition of metal electrodes. In addition, the reduced Schottky barrier at graphene/heterostructure interfaces facilitates the transport of carriers. Experimental results show that the photodetector based on WSe2/MoS2 heterostructures with Gr/ITO hybrid electrodes exhibits a high responsivity of up to 1236.5 A W−1, a detectivity of up to 1.23 × 1013 Jones, and a fast response of 270/130 μs to light from the ultraviolet to near-infrared range.

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3

Cheng, Beitong, Yong Zhou, Ruomei Jiang, Xule Wang, Shuai Huang, Xingyong Huang, Wei Zhang, et al. "Structural, Electronic and Optical Properties of Some New Trilayer Van de Waals Heterostructures." Nanomaterials 13, no. 9 (May 8, 2023): 1574. http://dx.doi.org/10.3390/nano13091574.

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Constructing two-dimensional (2D) van der Waals (vdW) heterostructures is an effective strategy for tuning and improving the characters of 2D-material-based devices. Four trilayer vdW heterostructures, BP/BP/MoS2, BlueP/BlueP/MoS2, BP/graphene/MoS2 and BlueP/graphene/MoS2, were designed and simulated using the first-principles calculation. Structural stabilities were confirmed for all these heterostructures, indicating their feasibility in fabrication. BP/BP/MoS2 and BlueP/BlueP/MoS2 lowered the bandgaps further, making them suitable for a greater range of applications, with respect to the bilayers BP/MoS2 and BlueP/MoS2, respectively. Their absorption coefficients were remarkably improved in a wide spectrum, suggesting the better performance of photodetectors working in a wide spectrum from mid-wave (short-wave) infrared to violet. In contrast, the bandgaps in BP/graphene/MoS2 and BlueP/graphene/MoS2 were mostly enlarged, with a specific opening of the graphene bandgap in BP/graphene/MoS2, 0.051 eV, which is much larger than usual and beneficial for optoelectronic applications. Accompanying these bandgap increases, BP/graphene/MoS2 and BlueP/graphene/MoS2 exhibit absorption enhancement in the whole infrared, visible to deep ultraviolet or solar blind ultraviolet ranges, implying that these asymmetrically graphene-sandwiched heterostructures are more suitable as graphene-based 2D optoelectronic devices. The proposed 2D trilayer vdW heterostructures are prospective new optoelectronic devices, possessing higher performance than currently available devices.

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4

Wu, Shuang, Jifen Wang, Huaqing Xie, and Zhixiong Guo. "Interfacial Thermal Conductance across Graphene/MoS2 van der Waals Heterostructures." Energies 13, no. 21 (November 9, 2020): 5851. http://dx.doi.org/10.3390/en13215851.

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The thermal conductivity and interface thermal conductance of graphene stacked MoS2 (graphene/MoS2) van der Waals heterostructure were studied by the first principles and molecular dynamics (MD) simulations. Firstly, two different heterostructures were established and optimized by VASP. Subsequently, we obtained the thermal conductivity (K) and interfacial thermal conductance (G) via MD simulations. The predicted Κ of monolayer graphene and monolayer MoS2 reached 1458.7 W/m K and 55.27 W/m K, respectively. The thermal conductance across the graphene/MoS2 interface was calculated to be 8.95 MW/m2 K at 300 K. The G increases with temperature and the interface coupling strength. Finally, the phonon spectra and phonon density of state were obtained to analyze the changing mechanism of thermal conductivity and thermal conductance.

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5

Thompson, Jesse E., Brandon T. Blue, Darian Smalley, Fernand Torres-Davila, Laurene Tetard, Jeremy T. Robinson, and Masahiro Ishigami. "STM Tip-Induced Switching in Molybdenum Disulfide-Based Atomristors." MRS Advances 4, no. 48 (2019): 2609–17. http://dx.doi.org/10.1557/adv.2019.322.

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ABSTRACTScanning tunneling microscopy and spectroscopy (STM/STS) are used to electronically switch atomically-thin memristors, referred to as “atomristors”, based on a graphene/molybdenum disulfide (MoS2)/Au heterostructure. A gold-assisted exfoliation method was used to produce near-millimeter (mm) scale MoS2 on Au thin-film substrates, followed by transfer of a separately exfoliated graphene top layer. Our results reveal that it is possible to switch the conductivity of a graphene/MoS2/Au memristor stack using an STM tip. These results provide a path to further studies of atomically-thin memristors fabricated from heterostructures of two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs).

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6

Wu, Feng, Zijin Wang, Jiaqi He, Zhenzhe Li, Lijuan Meng, and Xiuyun Zhang. "Effect of 3d Transition Metal Atom Intercalation Concentration on the Electronic and Magnetic Properties of Graphene/MoS2 Heterostructure: A First-Principles Study." Molecules 28, no. 2 (January 4, 2023): 509. http://dx.doi.org/10.3390/molecules28020509.

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The electronic and magnetic properties of graphene/MoS2 heterostructures intercalated with 3d transition metal (TM) atoms at different concentrations have been systematically investigated by first principles calculations. The results showed that all the studied systems are thermodynamically stable with large binding energies of about 3.72 eV–6.86 eV. Interestingly, all the TM-intercalated graphene/MoS2 heterostructures are ferromagnetic and their total magnetic moments increase with TM concentration. Furthermore, TM concentration-dependent spin polarization is obtained for the graphene layer and MoS2 layer due to the charge transfer between TM atoms and the layers. A significant band gap is opened for graphene in these TM-intercalated graphene/MoS2 heterostructures (around 0.094 eV–0.37 eV). With the TM concentration increasing, the band gap of graphene is reduced due to the enhanced spin polarization of graphene. Our study suggests a research direction for the manipulation of the properties of 2D materials through control of the intercalation concentration of TM atoms.

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7

Han, Tao, Hongxia Liu, Shulong Wang, Shupeng Chen, Kun Yang, and Zhandong Li. "Synthesis and Spectral Characteristics Investigation of the 2D-2D vdWs Heterostructure Materials." International Journal of Molecular Sciences 22, no. 3 (January 27, 2021): 1246. http://dx.doi.org/10.3390/ijms22031246.

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Due to the attractive optical and electrical properties, van der Waals (vdWs) heterostructures constructed from the different two-dimensional materials have received widespread attention. Here, MoS2/h-BN, MoS2/graphene, WS2/h-BN, and WS2/graphene vdWs heterostructures are successfully prepared by the CVD and wet transfer methods. The distribution, Raman and photoluminescence (PL) spectra of the above prepared heterostructure samples can be respectively observed and tested by optical microscopy and Raman spectrometry, which can be used to study their growth mechanisms and optical properties. Meanwhile, the uniformity and composition distribution of heterostructure films can also be analyzed by the Raman and PL spectra. The internal mechanism of Raman and PL spectral changes can be explained by comparing and analyzing the PL and Raman spectra of the junction and non-junction regions between 2D-2D vdWs heterostructure materials, and the effect of laser power on the optical properties of heterostructure materials can also be analyzed. These heterostructure materials exhibit novel and unique optical characteristics at the stacking or junction, which can provide a reliable experimental basis for the preparation of suitable TMDs heterostructure materials with excellent performance.

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8

Grundmann, Annika, Clifford McAleese, Ben Richard Conran, Andrew Pakes, Dominik Andrzejewski, Tilmar Kümmell, Gerd Bacher, et al. "MOVPE of Large-Scale MoS2/WS2, WS2/MoS2, WS2/Graphene and MoS2/Graphene 2D-2D Heterostructures for Optoelectronic Applications." MRS Advances 5, no. 31-32 (2020): 1625–33. http://dx.doi.org/10.1557/adv.2020.104.

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ABSTRACTMost publications on (opto)electronic devices based on 2D materials rely on single monolayers embedded in classical 3D semiconductors, dielectrics and metals. However, heterostructures of different 2D materials can be employed to tailor the performance of the 2D components by reduced defect densities, carrier or exciton transfer processes and improved stability. This translates to additional and unique degrees of freedom for novel device design. The nearly infinite number of potential combinations of 2D layers allows for many fascinating applications. Unlike mechanical stacking, metal-organic vapour phase epitaxy (MOVPE) can potentially provide large-scale highly homogeneous 2D layer stacks with clean and sharp interfaces. Here, we demonstrate the direct successive MOVPE of MoS2/WS2 and WS2/MoS2 heterostructures on 2” sapphire (0001) substrates. Furthermore, the first deposition of large-scale MoS2/graphene and WS2/graphene heterostructures using only MOVPE is presented and the influence of growth time on nucleation of WS2 on graphene is analysed.

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9

Rocha Robledo, Ana K., Mario Flores Salazar, Bárbara A. Muñiz Martínez, Ángel A. Torres-Rosales, Héctor F. Lara-Alfaro, Osvaldo Del Pozo-Zamudio, Edgar A. Cerda-Méndez, Sergio Jiménez-Sandoval, and Andres De Luna Bugallo. "Interlayer charge transfer in supported and suspended MoS2/Graphene/MoS2 vertical heterostructures." PLOS ONE 18, no. 7 (July 25, 2023): e0283834. http://dx.doi.org/10.1371/journal.pone.0283834.

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In this letter, we report on the optical and structural properties of supported and suspended MoS2/Graphene/MoS2 vertical heterostructures using Raman and photoluminescence (PL) spectroscopies. Vertical heterostructures (VH) are formed by multiple wet transfers on micro-sized holes in SiO2/Si substrates, resulting in VH with different configurations. The strong interlayer coupling is confirmed by Raman spectroscopy. Additionally, we observe an enhancement of the PL emission in the three-layer VH (either support or suspended) compared with bare MoS2 or MoS2/Graphene. This suggests the formation of a spatial type-II band alignment assisted by the graphene layer and thus, the operation of the VH as a n++/metal/n junction.

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10

Luu, Thi Ha Thu, Quang Trung Do, Manh Trung Tran, Tu Nguyen, Duy Hung Nguyen, and Thanh Huy Pham. "Optical Properties of 1D ZnO/MoS\(_2\) Heterostructures Synthesized by Thermal Evaporation Method." Communications in Physics 32, no. 3 (June 22, 2022): 319. http://dx.doi.org/10.15625/0868-3166/16867.

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MoS2 material attracts a great attention from researchers due to its graphene-like structure and the bandgap difference between its hexagonal monolayer and bulks. Recently, ZnO/MoS2 heterostructures have been received significant interest due to their distinguished properties. In this study, one-dimensional ZnO and ZnO/MoS2 heterostructures were successfully synthesized by a thermal co-evaporation method. Compare with ZnO, the band-to-band emission of ZnO/MoS2 heterostructures establishes a “blueshift” towards a shorter wavelength. It could be explained by the lattice strain in ZnO/MoS2 heterostructures due to the difference of primitive cell of ZnO and MoS2. Additionally, the quench in the visible region of the PL spectrum of ZnO/MoS2 heterostructures also explains the reduction of the defect in ZnO due to the presence of MoS2.

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11

Ebnonnasir, Abbas, Badri Narayanan, Suneel Kodambaka, and Cristian V. Ciobanu. "Tunable MoS2 bandgap in MoS2-graphene heterostructures." Applied Physics Letters 105, no. 3 (July 21, 2014): 031603. http://dx.doi.org/10.1063/1.4891430.

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12

Park, Do-Hyun, and Hyo Chan Lee. "Photogating Effect of Atomically Thin Graphene/MoS2/MoTe2 van der Waals Heterostructures." Micromachines 14, no. 1 (January 4, 2023): 140. http://dx.doi.org/10.3390/mi14010140.

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The development of short-wave infrared photodetectors based on various two-dimensional (2D) materials has recently attracted attention because of the ability of these devices to operate at room temperature. Although van der Waals heterostructures of 2D materials with type-II band alignment have significant potential for use in short-wave infrared photodetectors, there is a need to develop photodetectors with high photoresponsivity. In this study, we investigated the photogating of graphene using a monolayer-MoS2/monolayer-MoTe2 van der Waals heterostructure. By stacking MoS2/MoTe2 on graphene, we fabricated a broadband photodetector that exhibited a high photoresponsivity (>100 mA/W) and a low dark current (60 nA) over a wide wavelength range (488–1550 nm).

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13

Larson, Daniel T., Ioanna Fampiou, Gunn Kim, and Efthimios Kaxiras. "Lithium Intercalation in Graphene–MoS2 Heterostructures." Journal of Physical Chemistry C 122, no. 43 (October 9, 2018): 24535–41. http://dx.doi.org/10.1021/acs.jpcc.8b07548.

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14

Le, Minh-Quy. "Cohesive energy in graphene/MoS2 heterostructures." Meccanica 52, no. 1-2 (February 29, 2016): 307–15. http://dx.doi.org/10.1007/s11012-016-0402-6.

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15

Jiang, Jin-Wu, and Harold S. Park. "Mechanical properties of MoS2/graphene heterostructures." Applied Physics Letters 105, no. 3 (July 21, 2014): 033108. http://dx.doi.org/10.1063/1.4891342.

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16

Drozdov, AD, and J. deClaville Christiansen. "Modeling dielectric permittivity of polymer composites filled with transition metal dichalcogenide nanoparticles." Journal of Composite Materials 54, no. 25 (May 1, 2020): 3841–55. http://dx.doi.org/10.1177/0021998320922601.

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A model is developed for the dielectric permittivity of polymer nanocomposites reinforced with transition metal dichalcogenide fillers at microwave frequencies. The model takes into account aggregation of nanoparticles into clusters (that involve both filler and matrix components) and the aspect ratio of aggregates. The governing equations involve four material parameters that are found by matching observations on the real and imaginary parts of the dielectric permittivity of polymers reinforced with MoS2 and WS2 micro- and nanospheres, MoS2 nanosheets and nanoflowers, and composite heterostructures formed by MoS2 and MoS2-CoS2 nanoparticles with graphene and reduced graphene oxide. Good agreement is demonstrated between results of simulation and the experimental data at frequencies in the S, X, and Ku bands of the electromagnetic spectrum. It is shown that composite heterostructures have superior dielectric properties compared with those of neat transition metal dichalcogenide nanoparticles.

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17

Fang, Qinglong, Min Li, Xumei Zhao, Lin Yuan, Boyu Wang, Caijuan Xia, and Fei Ma. "van der Waals graphene/MoS₂ heterostructures: tuning the electronic properties and Schottky barrier by applying a biaxial strain." Materials Advances 3, no. 1 (2022): 624–31. http://dx.doi.org/10.1039/d1ma00806d.

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18

Sun, Zeliang, Gang Peng, Zongqi Bai, Xiangzhe Zhang, Yuehua Wei, Chuyun Deng, Yi Zhang, et al. "Selective etching in graphene–MoS2 heterostructures for fabricating graphene-contacted MoS2 transistors." AIP Advances 10, no. 3 (March 1, 2020): 035219. http://dx.doi.org/10.1063/1.5141143.

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19

Hastuti, Dian Putri, Kenji Nawa, and Kohji Nakamura. "Electronic Structures of Graphene/MoS<sub>2</sub> Heterostructure: Effects of Stacking Orientation, Element Substitution, and Interlayer Distance." Indonesian Journal of Chemistry 23, no. 1 (December 21, 2022): 140. http://dx.doi.org/10.22146/ijc.75538.

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Effects of stacking orientation, element substitution, and interlayer distance on electronic structures of graphene/MoS2 heterostructures were investigated using first-principles calculations. The results predicted that the stacking orientation does not take a crucial role in changing the electronic structures in contrast to element substitution, which converts the system from semiconductor to metallic. A bandgap opening originating in a Dirac band of graphene is found to be governed by the interface distance between graphene and MoS2 layers.

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20

Qian, Yongteng, Zhiyi Lyu, Qianwen Zhang, Tae Hyeong Lee, Tae Kyu Kang, Minkyun Sohn, Lin Shen, Dong Hwan Kim, and Dae Joon Kang. "High-Performance Flexible Energy Storage Devices Based on Graphene Decorated with Flower-Shaped MoS2 Heterostructures." Micromachines 14, no. 2 (January 23, 2023): 297. http://dx.doi.org/10.3390/mi14020297.

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MoS2, owing to its advantages of having a sheet-like structure, high electrical conductivity, and benign environmental nature, has emerged as a candidate of choice for electrodes of next-generation supercapacitors. Its widespread use is offset, however, by its low energy density and poor durability. In this study, to overcome these limitations, flower-shaped MoS2/graphene heterostructures have been deployed as electrode materials on flexible substrates. Three-electrode measurements yielded an exceptional capacitance of 853 F g−1 at 1.0 A g−1, while device measurements on an asymmetric supercapacitor yielded 208 F g−1 at 0.5 A g−1 and long-term cyclic durability. Nearly 86.5% of the electrochemical capacitance was retained after 10,000 cycles at 0.5 A g−1. Moreover, a remarkable energy density of 65 Wh kg−1 at a power density of 0.33 kW kg−1 was obtained. Our MoS2/Gr heterostructure composites have great potential for the development of advanced energy storage devices.

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21

Zhang, Yue, Xiangzhe Zhang, Chuyun Deng, Qi Ge, Junjie Huang, Jie Lu, Gaoxiang Lin, Zekai Weng, Xueao Zhang, and Weiwei Cai. "Effect of graphene grain boundaries on MoS2/graphene heterostructures." Chinese Physics B 29, no. 6 (June 2020): 067403. http://dx.doi.org/10.1088/1674-1056/ab8a37.

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22

Shen, Yi Yang. "MoS₂/Graphene Heterostructure Anode for Li-Ion Battery Application: A First-Principles Study." Key Engineering Materials 896 (August 10, 2021): 53–59. http://dx.doi.org/10.4028/www.scientific.net/kem.896.53.

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The development of next generation Li ion battery has attracted many attentions of researchers due to the rapidly increasing demands to portable energy storage devices. General Li metal/alloy anodes are confronted with challenges of dendritic crystal formation and slow charge/discharge rate. Recently, the prosperity of two-dimensional materials opens a new window for the design of battery anode. In the present study, MoS2/graphene heterostructure is investigate for the anode application of Li ion battery using first-principles calculations. The Li binding energy, open-circuit voltage, and electronic band structures are acquired for various Li concentrations. We found the open-circuit voltage decreases from ~2.28 to ~0.4 V for concentration from 0 to 1. Density of states show the electrical conductivity of the intercalated heterostructures can be significantly enhanced. The charge density differences are used to explain the variations of voltage and density of states. Last, ~0.43 eV diffusion energy barrier of Li implies the possible fast charge/discharge rate. Our study indicate MoS2/graphene heterostructure is promising material as Li ion battery anode.

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23

Houssa, M., K. Iordanidou, A. Dabral, A. Lu, R. Meng, G. Pourtois, V. V. Afanas'ev, and A. Stesmans. "Contact resistance at graphene/MoS2 lateral heterostructures." Applied Physics Letters 114, no. 16 (April 22, 2019): 163101. http://dx.doi.org/10.1063/1.5083133.

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24

Ding, Zhiwei, Qing-Xiang Pei, Jin-Wu Jiang, Wenxuan Huang, and Yong-Wei Zhang. "Interfacial thermal conductance in graphene/MoS2 heterostructures." Carbon 96 (January 2016): 888–96. http://dx.doi.org/10.1016/j.carbon.2015.10.046.

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25

Zhang, Run-Sen, and Jin-Wu Jiang. "Effect of misfit strain on the thermal expansion coefficient of graphene/MoS₂ van der Waals heterostructures." Physical Chemistry Chemical Physics 24, no. 1 (2022): 156–62. http://dx.doi.org/10.1039/d1cp04655a.

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Анотація:

Because of their advanced properties inherited from their constituent atomic layers, van der Waals heterostructures such as graphene/MoS2 are promising candidates for many optical and electronic applications.

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26

Song, Shun, Jian Gong, Xiangwei Jiang, and Shenyuan Yang. "Influence of the interface structure and strain on the rectification performance of lateral MoS₂/graphene heterostructure devices." Physical Chemistry Chemical Physics 24, no. 4 (2022): 2265–74. http://dx.doi.org/10.1039/d1cp04502d.

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Анотація:

We systematically study the influence of interface configuration and strain on the electronic and transport properties of lateral MoS2/graphene heterostructures by first-principles calculations and quantum transport simulations.

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27

Chen, Yichuan, and Mengtao Sun. "Two-dimensional WS2/MoS2 heterostructures: properties and applications." Nanoscale 13, no. 11 (2021): 5594–619. http://dx.doi.org/10.1039/d1nr00455g.

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The successful fabrication of WS₂/MoS₂ heterostructures provides more possibilities for optoelectronic and thermoelectric applications than graphene because of their direct bandgap characteristics.

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28

Sitek, Jakub, Iwona Pasternak, Karolina Czerniak-Łosiewicz, Michał Świniarski, Paweł P. Michałowski, Clifford McAleese, Xiaochen Wang, et al. "Three-step, transfer-free growth of MoS₂/WS₂/graphene vertical van der Waals heterostructure." 2D Materials 9, no. 2 (April 1, 2022): 025030. http://dx.doi.org/10.1088/2053-1583/ac5f6d.

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Abstract Van der Waals heterostructures (vdWHSs) provide a unique playground to study fundamental physics and practical applications of two-dimensional (2D) materials. However, most 2D heterostructures are prepared by transfer, hindering their technological implementation. Here, we report the first chemical vapour deposition of monolayered MoS2/WS2/graphene vertical vdWHS without transfer step. By atomic force microscopy, photoluminescence, Raman spectroscopy, and secondary ion mass spectroscopy, we confirmed the vertical stacking of three different 2D materials. The use of WS2, graphene, and sapphire as growth substrates allowed us to describe the 2D materials growth process better. We determined that for the synthesis of 2D materials, only the chemical potential of the crystal formation and the substrate-layer adhesion energy are relevant factors. In addition, we used MoS2/WS2/graphene vdWHS to fabricate a photoresponsive memory device, showing the application potential of such heterostacks. Our results clarify the growth mechanisms of 2D materials and pave the way for the growth of more complex vdWHSs.

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29

Coy-Diaz, Horacio, François Bertran, Chaoyu Chen, José Avila, Julien Rault, Patrick Le Fèvre, Maria C. Asensio, and Matthias Batzill. "Band renormalization and spin polarization of MoS2 in graphene/MoS2 heterostructures." physica status solidi (RRL) - Rapid Research Letters 9, no. 12 (November 4, 2015): 701–6. http://dx.doi.org/10.1002/pssr.201510346.

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30

Wu, Xin, Ruxue Yang, Xiyue Chen, and Wei Liu. "Fabrication of Nanopore in MoS2-Graphene vdW Heterostructure by Ion Beam Irradiation and the Mechanical Performance." Nanomaterials 12, no. 2 (January 7, 2022): 196. http://dx.doi.org/10.3390/nano12020196.

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Nanopore structure presents great application potential especially in the area of biosensing. The two-dimensional (2D) vdW heterostructure nanopore shows unique features, while research around its fabrication is very limited. This paper proposes for the first time the use of ion beam irradiation for creating nanopore structure in 2D vdW graphene-MoS2 heterostructures. The formation process of the heterostructure nanopore is discussed first. Then, the influence of ion irradiation parameters (ion energy and ion dose) is illustrated, based on which the optimal irradiation parameters are derived. In particular, the effect of stacking order of the heterostructure 2D layers on the induced phenomena and optimal parameters are taken into consideration. Finally, uniaxial tensile tests are conducted by taking the effect of irradiation parameters, nanopore size and stacking order into account to demonstrate the mechanical performance of the heterostructure for use under a loading condition. The results would be meaningful for expanding the applications of heterostructure nanopore structure, and can arouse more research interest in this area.

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31

Van Nguyen, Khoe, Shih-Yen Lin, and Yia-Chung Chang. "Transfer current in p-type graphene/MoS2 heterostructures." Physica E: Low-dimensional Systems and Nanostructures 125 (January 2021): 114383. http://dx.doi.org/10.1016/j.physe.2020.114383.

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32

Roy, Kallol, Medini Padmanabhan, Srijit Goswami, T. Phanindra Sai, Sanjeev Kaushal, and Arindam Ghosh. "Optically active heterostructures of graphene and ultrathin MoS2." Solid State Communications 175-176 (December 2013): 35–42. http://dx.doi.org/10.1016/j.ssc.2013.09.021.

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33

Bertolazzi, Simone, Daria Krasnozhon, and Andras Kis. "Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures." ACS Nano 7, no. 4 (March 19, 2013): 3246–52. http://dx.doi.org/10.1021/nn3059136.

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34

Zhang, Zhihao, and Jiaying Ye. "Free-Standing Multilayer MoS2-BP Heterostructures for High Performance Self-Powered Photodetector." Journal of Physics: Conference Series 2440, no. 1 (January 1, 2023): 012011. http://dx.doi.org/10.1088/1742-6596/2440/1/012011.

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Анотація:

Abstract Phototransistors based on two-dimensional materials such as graphene, transition metal sulfides, and black phosphorus are widely used in in recent years. However, these materials have weak optical absorption, low carrier mobility or poor air stability, which restrict their application in the field of high-sensitivity detection. The inter-stacking of two-dimensional semiconductors can achieve excellent performance, and has promising applications in the field of optoelectronics. The stacking of two-dimensional semiconductors can form van der Waals heterostructures with low defect states and spatial homogeneity, which is an effective way to improve the performance of 2D photodetectors. Based on this, this paper constructs a free-standing multilayer MoS2-BP heterostructure by mechanical exfoliation for high performance self-powered photodetector. The strong space charge region can effectively separate the photogenerated carriers, so it has a good photodetection capability in the self-driven state. Moreover, we analyse and summarize the working mechanism of photodetectors based on 2D materials, and review high sensitivity detectors of recent years based on 2D material heterojunction. Finally, the challenges to further improve the detection sensitivity are pointed out. Thus, our free-standing multilayer MoS2-BP heterostructure propose a useful experience and reference for the future development of self-power photodetectors.

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35

Li, Xiaowen, Chuanwei Huang, Songbai Hu, Bei Deng, Zuhuang Chen, Wenqiao Han, and Lang Chen. "Negative and near-zero Poisson's ratios in 2D graphene/MoS2 and graphene/h-BN heterostructures." Journal of Materials Chemistry C 8, no. 12 (2020): 4021–29. http://dx.doi.org/10.1039/c9tc06424a.

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36

Gupta, Sanju, Panagiota Pimenidou, Miguel Garcia, Shivanshi Das, and Nicholas Dimakis. "Dataset of optical and electronic properties for MoS2-graphene vertical heterostructures and MoS2-graphene-Au heterointerfaces." Data in Brief 49 (August 2023): 109341. http://dx.doi.org/10.1016/j.dib.2023.109341.

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37

Lu, Yueheng, Xiao Sun, Huabin Zhou, Haojie Lai, Ran Liu, Pengyi Liu, Yang Zhou, and Weiguang Xie. "A high-performance and broadband two-dimensional perovskite-based photodetector via van der Waals integration." Applied Physics Letters 121, no. 16 (October 17, 2022): 161104. http://dx.doi.org/10.1063/5.0116505.

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Van der Waals (vdW) integration of two-dimensional (2D) nanosheets provides the possibility to design optoelectronic devices with extended functionality in a controllable manner. Here, by leveraging the appropriate energy band alignment and the high-efficiency charge transfer at the junction, we construct the MoS2/graphene/2D-perovskite vdW heterostructure, which realizes the highly sensitive and broadband photodetection. Particularly, at the near-infrared (NIR) wavelength (λ = 1550 nm), the heterostructure photodetector shows a balanced trade-off between the high responsivity (>3000 A/W) and fast response time (<1 ms), outperforming the previously reported NIR photodetectors based on all-inorganic vdW heterostructures. Our work not only extends the response wavelength of the 2D hybrid perovskite-based photodetector to the NIR range, but also offers additional insight into optoelectronic devices via vdW integration engineering.

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38

Larentis, Stefano, John R. Tolsma, Babak Fallahazad, David C. Dillen, Kyounghwan Kim, Allan H. MacDonald, and Emanuel Tutuc. "Band Offset and Negative Compressibility in Graphene-MoS2 Heterostructures." Nano Letters 14, no. 4 (March 19, 2014): 2039–45. http://dx.doi.org/10.1021/nl500212s.

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39

Kim, Hyeong-U., Mansu Kim, Yinhua Jin, Yuhwan Hyeon, Ki Seok Kim, Byeong-Seon An, Cheol-Woong Yang, et al. "Low-temperature wafer-scale growth of MoS2-graphene heterostructures." Applied Surface Science 470 (March 2019): 129–34. http://dx.doi.org/10.1016/j.apsusc.2018.11.126.

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40

Gu, Huahao, Longsheng Zhang, Yunpeng Huang, Youfang Zhang, Wei Fan, and Tianxi Liu. "Quasi-one-dimensional graphene nanoribbon-supported MoS2 nanosheets for enhanced hydrogen evolution reaction." RSC Advances 6, no. 17 (2016): 13757–65. http://dx.doi.org/10.1039/c5ra27180k.

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Анотація:

Few-layered MoS₂ nanosheets-decorated quasi-one-dimensional graphene nanoribbons (GNRs) hybrids with heterostructures were fabricated as efficient electrocatalysts for hydrogen evolution reaction.

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41

Phan, Thi Thuy Trang, Thi Thanh Huong Nguyen, Ha Tran Huu, Thanh Tam Truong, Le Tuan Nguyen, Van Thang Nguyen, Vy Anh Tran, Thi Lan Nguyen, Hong Lien Nguyen, and Vien Vo. "Hydrothermal Synthesis of MoS2/rGO Heterostructures for Photocatalytic Degradation of Rhodamine B under Visible Light." Journal of Nanomaterials 2021 (July 28, 2021): 1–11. http://dx.doi.org/10.1155/2021/9941202.

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MoS2/rGO composites were synthesized by hydrothermal method from the precursors of MoS2 and reduced graphene oxide (rGO) prepared in the former steps. The influence of the synthesis conditions including hydrothermal temperature and mass ratio of MoS2 to rGO on the structure, morphology, and optical absorption capacity of the MoS2/rGO composites was systematically investigated using physicochemical characterizations. The photocatalytic performance of as-prepared samples was investigated on the degradation of Rhodamine B under visible light, in which, the composites obtained at hydrothermal temperature of 180°C and MoS2/rGO mass ratio of 4/1 exhibited the highest photodegradation efficiency of approx. 80% after 4 hours of reaction. This enhancement in photocatalytic behaviour of composites could be assigned to the positive effect of rGO in life time expansion of photoinduced electrons—holes.

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42

Ning, Feng, Dan Wang, Ye-Xin Feng, Li-Ming Tang, Yong Zhang, and Ke-Qiu Chen. "Strong interfacial interaction and enhanced optical absorption in graphene/InAs and MoS2/InAs heterostructures." Journal of Materials Chemistry C 5, no. 36 (2017): 9429–38. http://dx.doi.org/10.1039/c7tc03350h.

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43

Zan, Wenyan, Wei Geng, Huanxiang Liu, and Xiaojun Yao. "Electric-field and strain-tunable electronic properties of MoS2/h-BN/graphene vertical heterostructures." Physical Chemistry Chemical Physics 18, no. 4 (2016): 3159–64. http://dx.doi.org/10.1039/c5cp06029j.

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44

Neupane, Hari Krishna, and Narayan Prasad Adhikari. "Structural, electronic and magnetic properties of S sites vacancy defects graphene/MoS2 van der Waals heterostructures: First-principles study." International Journal of Computational Materials Science and Engineering 10, no. 02 (June 2021): 2150009. http://dx.doi.org/10.1142/s2047684121500093.

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In this work, we investigated the geometrical structures, electronic and magnetic properties of S sites vacancy defects in heterostructure graphene/molybdenum disulphide ((HS)G/MoS[Formula: see text] material by performing first-principles calculations based on spin polarized Density Functional Theory (DFT) method within van der Waals (vdW) corrections (DFT-D2) approach. All the structures are optimized and relaxed by BFGS method using computational tool Quantum ESPRESSO (QE) package. We found that both (HS)G/MoS2 and S sites vacancy defects in (HS)G/MoS2 (D1S–(HS)G/MoS2, U1S–(HS)G/MoS2, 2S–(HS)G/MoS2 and 3S–(HS)G/MoS[Formula: see text] are stable materials, and atoms in defects structures are more compact than in pristine (HS)G/MoS2 structure. From band structure calculations, we found that (HS)G/MoS2, (D1S–(HS)G/MoS2, U1S–(HS)G/MoS2, 2S–(HS)G/MoS2 and 3S–(HS)G/MoS[Formula: see text] materials have [Formula: see text]-type Schottky contact. The Dirac cone is formed in conduction band of the materials mentioned above. The barrier height of Dirac cones from Fermi energy level of (HS)G/MoS2, (D1S–(HS)G/MoS2, U1S–(HS)G/MoS2, 2S–(HS)G/MoS2 and 3S–(HS)G/MoS[Formula: see text] materials have values 0.56[Formula: see text]eV, 0.62[Formula: see text]eV, 0.62[Formula: see text]eV, 0.64[Formula: see text]eV and 0.65[Formula: see text]eV, respectively, which means they have metallic properties. To study the magnetic properties of materials, we have carried out DoS and PDoS calculations. We found that (HS)G/MoS2, D1S–(HS)G/MoS2 and U1S–(HS)G/MoS2 materials have non-magnetic properties, and 2S–(HS)G/MoS2 and 3S–(HS)G/MoS2 materials have magnetic properties. Therefore, the non-magnetic (HS)G/MoS2 changes to magnetic 2S–(HS)G/MoS2 and 3S–(HS)G/MoS2 materials due to 2S and 3S atoms vacancy defects, respectively, in (HS)G/MoS2 material. Magnetic moment obtained in 2S–(HS)G/MoS2 and 3S–(HS)G/MoS2 materials due to the unequal distribution of up and down spin states of electrons in 2s and 2p orbitals of C atoms; 4p, 4d and 5s orbitals of Mo atoms; and 3s and 3p orbitals of S atoms in structures. Magnetic moment of 2S–(HS)G/MoS2 and 3S–(HS)G/MoS2 materials is −0.11[Formula: see text][Formula: see text]/cell and [Formula: see text]/cell, respectively, and spins of 2p orbital of C atoms, 3p orbital of S atoms and 4d orbital of Mo atoms have dominant role to create magnetism in 2S–(HS)G/MoS2 and 3S–(HS)G/MoS2 materials.

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45

Özkan, Doğuş, M. Cenk Özekinci, Zeynep Taşlıçukur Öztürk, and Egemen Sulukan. "Two Dimensional Materials for Military Applications." Defence Science Journal 70, no. 6 (October 12, 2020): 672–81. http://dx.doi.org/10.14429/dsj.70.15879.

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This paper particularly focuses on 2D materials and their utilization in military applications. 2D and heterostructured 2D materials have great potential for military applications in developing energy storage devices, sensors, electronic devices, and weapon systems. Advanced 2D material-based sensors and detectors provide high awareness and significant opportunities to attain correct data required for planning, optimization, and decision-making, which are the main factors in the command and control processes in the military operations. High capacity sensors and detectors or energy storage can be developed not only by using 2D materials such as graphene, hexagonal boron nitride (hBN), MoS2, MoSe2, MXenes; but also by combining 2D materials to obtain heterostructures. Phototransistors, flexible thin-film transistors, IR detectors, electrodes for batteries, organic photovoltaic cells, and organic light-emitting diodes have been being developed from the 2D materials for devices that are used in weapon systems, chemical-biological warfare sensors, and detection systems. Therefore, the utilization of 2D materials is the key factor and the future of advanced sensors, weapon systems, and energy storage devices for military applications.

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46

Alem, Nasim. "(Invited, Digital Presentation) Synthesis and Atomic Scale Characterization of 2D Layered Heterostructures Atom by Atom: An Ultra-high Resolution Aberration-corrected Electron Microscopy Study." ECS Meeting Abstracts MA2022-01, no. 12 (July 7, 2022): 878. http://dx.doi.org/10.1149/ma2022-0112878mtgabs.

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Defects can have a profound effect on the macroscale physical, chemical, and electronic properties of nanostructures. They can lead to structural distortions, introduce extra states in the band gap and give rise to excess potential locally at buried interfaces. While defects and interfaces have been a well-studied subject for decades, little is known about their local atomic and chemical structure, sub-Angstrom structural distortions within their vicinity. Using ultra-high-resolution aberration-corrected S/TEM imaging and spectroscopy, this talk will discuss our recent efforts on the determination of the defect chemistry and sub-Angstrom relaxation effects in nanostructures around at the interfaces in the family of 2D crystal heterostructures. In the family of 2D crystal transition metal dichalcogenides (TMDs) alloys, we report how on anisotropy of the building blocks in the 2D heterostructure, such as ReS2/MoS2 and WS2/Graphene, and their epitaxy and strain at the interface can affect their nucleation and growth. This work will further uncover the structural distortions that occur in these heterostructure across various length scales and reveals the underlying physics of the formation of such heterostructures and their strain state resulting from CVD synthesis.

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47

Lin, Yuxuan, Qiong Ma, Pin-Chun Shen, Batyr Ilyas, Yaqing Bie, Albert Liao, Emre Ergeçen, et al. "Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions." Science Advances 5, no. 6 (June 2019): eaav1493. http://dx.doi.org/10.1126/sciadv.aav1493.

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The massless Dirac electron transport in graphene has led to a variety of unique light-matter interaction phenomena, which promise many novel optoelectronic applications. Most of the effects are only accessible by breaking the spatial symmetry, through introducing edges, p-n junctions, or heterogeneous interfaces. The recent development of direct synthesis of lateral heterostructures offers new opportunities to achieve the desired asymmetry. As a proof of concept, we study the photothermoelectric effect in an asymmetric lateral heterojunction between the Dirac semimetallic monolayer graphene and the parabolic semiconducting monolayer MoS2. Very different hot-carrier cooling mechanisms on the graphene and the MoS2 sides allow us to resolve the asymmetric thermalization pathways of photoinduced hot carriers spatially with electrostatic gate tunability. We also demonstrate the potential of graphene-2D semiconductor lateral heterojunctions as broadband infrared photodetectors. The proposed structure shows an extreme in-plane asymmetry and provides a new platform to study light-matter interactions in low-dimensional systems.

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48

Yue, Yuchen, Yiyu Feng, Jiancui Chen, Daihua Zhang, and Wei Feng. "Two-dimensional large-scale bandgap-tunable monolayer MoS2(1−x)Se2x/graphene heterostructures for phototransistors." Journal of Materials Chemistry C 5, no. 24 (2017): 5887–96. http://dx.doi.org/10.1039/c7tc00951h.

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The centimeter-scale and high-quality bandgap-tunable monolayer MoS_2(1−x)Se_2x films are prepared on graphene by one-step direct synthesis, and the phototransistors of MoS_2(1−x)Se_2x/graphene heterostructures exhibit high responsivity and good cycling performance.

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49

Neupane, Hari Krishna, and Narayan Prasad Adhikari. "Adsorption of Water Molecule in Graphene/MoS2 Heterostructure with Vacancy Defects in Mo Sites." Advances in Condensed Matter Physics 2022 (April 11, 2022): 1–18. http://dx.doi.org/10.1155/2022/2135213.

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First-principle calculations based on the spin-polarized density functional theory (DFT) with vdW corrections by DFT-D2 approach have been carried out to study structural, electronic, and magnetic properties of water-adsorbed graphene/MoS2 heterostructures (system-I), and water-adsorbed graphene/MoS2 heterostructures with vacancy defects in Mo sites (systems-II). We consider vacancy defects in different Mo sites such as centre-1Mo atom vacancy defect (system-IIa), left-1Mo atom vacancy defect (system-IIb), and 2Mo atom vacancy defects (system-IIc). All the systems considered in this study are structurally stable; however, the stability of defected systems decreases with an increase in defect concentrations. The calculated binding energies of HS used in this study agree with the reported work. Electronic properties of system-I and systems-II reveal that they have metallic characteristics. Our investigation shows that system-I is nonmagnetic and systems-II are magnetic. The magnetic moment in the defected systems (system-IIa, system-IIb, and system-IIc) is developed by unpaired up and down-spins of electrons created in the orbitals of atoms due to vacancy defects in Mo atoms.

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50

Yunus, Rozan Mohamad, Hiroko Endo, Masaharu Tsuji, and Hiroki Ago. "Vertical heterostructures of MoS2 and graphene nanoribbons grown by two-step chemical vapor deposition for high-gain photodetectors." Physical Chemistry Chemical Physics 17, no. 38 (2015): 25210–15. http://dx.doi.org/10.1039/c5cp03958d.

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