Статті в журналах з теми "MoS2 graphene heterostructures"
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Dong, Haocong, Junzhu Li, Mingguang Chen, Hongwei Wang, Xiaochuan Jiang, Yongguang Xiao, Bo Tian, and Xixiang Zhang. "High-throughput Production of ZnO-MoS2-Graphene Heterostructures for Highly Efficient Photocatalytic Hydrogen Evolution." Materials 12, no. 14 (July 11, 2019): 2233. http://dx.doi.org/10.3390/ma12142233.
Повний текст джерелаXiao, Haodong, Lin Lin, Jia Zhu, Junxiong Guo, Yizhen Ke, Linna Mao, Tianxun Gong, Huanyu Cheng, Wen Huang, and Xiaosheng Zhang. "Highly sensitive and broadband photodetectors based on WSe2/MoS2 heterostructures with van der Waals contact electrodes." Applied Physics Letters 121, no. 2 (July 11, 2022): 023504. http://dx.doi.org/10.1063/5.0100191.
Повний текст джерелаCheng, Beitong, Yong Zhou, Ruomei Jiang, Xule Wang, Shuai Huang, Xingyong Huang, Wei Zhang, et al. "Structural, Electronic and Optical Properties of Some New Trilayer Van de Waals Heterostructures." Nanomaterials 13, no. 9 (May 8, 2023): 1574. http://dx.doi.org/10.3390/nano13091574.
Повний текст джерелаWu, Shuang, Jifen Wang, Huaqing Xie, and Zhixiong Guo. "Interfacial Thermal Conductance across Graphene/MoS2 van der Waals Heterostructures." Energies 13, no. 21 (November 9, 2020): 5851. http://dx.doi.org/10.3390/en13215851.
Повний текст джерелаThompson, Jesse E., Brandon T. Blue, Darian Smalley, Fernand Torres-Davila, Laurene Tetard, Jeremy T. Robinson, and Masahiro Ishigami. "STM Tip-Induced Switching in Molybdenum Disulfide-Based Atomristors." MRS Advances 4, no. 48 (2019): 2609–17. http://dx.doi.org/10.1557/adv.2019.322.
Повний текст джерелаWu, Feng, Zijin Wang, Jiaqi He, Zhenzhe Li, Lijuan Meng, and Xiuyun Zhang. "Effect of 3d Transition Metal Atom Intercalation Concentration on the Electronic and Magnetic Properties of Graphene/MoS2 Heterostructure: A First-Principles Study." Molecules 28, no. 2 (January 4, 2023): 509. http://dx.doi.org/10.3390/molecules28020509.
Повний текст джерелаHan, Tao, Hongxia Liu, Shulong Wang, Shupeng Chen, Kun Yang, and Zhandong Li. "Synthesis and Spectral Characteristics Investigation of the 2D-2D vdWs Heterostructure Materials." International Journal of Molecular Sciences 22, no. 3 (January 27, 2021): 1246. http://dx.doi.org/10.3390/ijms22031246.
Повний текст джерелаGrundmann, Annika, Clifford McAleese, Ben Richard Conran, Andrew Pakes, Dominik Andrzejewski, Tilmar Kümmell, Gerd Bacher, et al. "MOVPE of Large-Scale MoS2/WS2, WS2/MoS2, WS2/Graphene and MoS2/Graphene 2D-2D Heterostructures for Optoelectronic Applications." MRS Advances 5, no. 31-32 (2020): 1625–33. http://dx.doi.org/10.1557/adv.2020.104.
Повний текст джерелаRocha Robledo, Ana K., Mario Flores Salazar, Bárbara A. Muñiz Martínez, Ángel A. Torres-Rosales, Héctor F. Lara-Alfaro, Osvaldo Del Pozo-Zamudio, Edgar A. Cerda-Méndez, Sergio Jiménez-Sandoval, and Andres De Luna Bugallo. "Interlayer charge transfer in supported and suspended MoS2/Graphene/MoS2 vertical heterostructures." PLOS ONE 18, no. 7 (July 25, 2023): e0283834. http://dx.doi.org/10.1371/journal.pone.0283834.
Повний текст джерелаLuu, Thi Ha Thu, Quang Trung Do, Manh Trung Tran, Tu Nguyen, Duy Hung Nguyen, and Thanh Huy Pham. "Optical Properties of 1D ZnO/MoS\(_2\) Heterostructures Synthesized by Thermal Evaporation Method." Communications in Physics 32, no. 3 (June 22, 2022): 319. http://dx.doi.org/10.15625/0868-3166/16867.
Повний текст джерелаEbnonnasir, Abbas, Badri Narayanan, Suneel Kodambaka, and Cristian V. Ciobanu. "Tunable MoS2 bandgap in MoS2-graphene heterostructures." Applied Physics Letters 105, no. 3 (July 21, 2014): 031603. http://dx.doi.org/10.1063/1.4891430.
Повний текст джерелаPark, Do-Hyun, and Hyo Chan Lee. "Photogating Effect of Atomically Thin Graphene/MoS2/MoTe2 van der Waals Heterostructures." Micromachines 14, no. 1 (January 4, 2023): 140. http://dx.doi.org/10.3390/mi14010140.
Повний текст джерелаLarson, Daniel T., Ioanna Fampiou, Gunn Kim, and Efthimios Kaxiras. "Lithium Intercalation in Graphene–MoS2 Heterostructures." Journal of Physical Chemistry C 122, no. 43 (October 9, 2018): 24535–41. http://dx.doi.org/10.1021/acs.jpcc.8b07548.
Повний текст джерелаLe, Minh-Quy. "Cohesive energy in graphene/MoS2 heterostructures." Meccanica 52, no. 1-2 (February 29, 2016): 307–15. http://dx.doi.org/10.1007/s11012-016-0402-6.
Повний текст джерелаJiang, Jin-Wu, and Harold S. Park. "Mechanical properties of MoS2/graphene heterostructures." Applied Physics Letters 105, no. 3 (July 21, 2014): 033108. http://dx.doi.org/10.1063/1.4891342.
Повний текст джерелаDrozdov, AD, and J. deClaville Christiansen. "Modeling dielectric permittivity of polymer composites filled with transition metal dichalcogenide nanoparticles." Journal of Composite Materials 54, no. 25 (May 1, 2020): 3841–55. http://dx.doi.org/10.1177/0021998320922601.
Повний текст джерелаFang, Qinglong, Min Li, Xumei Zhao, Lin Yuan, Boyu Wang, Caijuan Xia, and Fei Ma. "van der Waals graphene/MoS2 heterostructures: tuning the electronic properties and Schottky barrier by applying a biaxial strain." Materials Advances 3, no. 1 (2022): 624–31. http://dx.doi.org/10.1039/d1ma00806d.
Повний текст джерелаSun, Zeliang, Gang Peng, Zongqi Bai, Xiangzhe Zhang, Yuehua Wei, Chuyun Deng, Yi Zhang, et al. "Selective etching in graphene–MoS2 heterostructures for fabricating graphene-contacted MoS2 transistors." AIP Advances 10, no. 3 (March 1, 2020): 035219. http://dx.doi.org/10.1063/1.5141143.
Повний текст джерелаHastuti, Dian Putri, Kenji Nawa, and Kohji Nakamura. "Electronic Structures of Graphene/MoS<sub>2</sub> Heterostructure: Effects of Stacking Orientation, Element Substitution, and Interlayer Distance." Indonesian Journal of Chemistry 23, no. 1 (December 21, 2022): 140. http://dx.doi.org/10.22146/ijc.75538.
Повний текст джерелаQian, Yongteng, Zhiyi Lyu, Qianwen Zhang, Tae Hyeong Lee, Tae Kyu Kang, Minkyun Sohn, Lin Shen, Dong Hwan Kim, and Dae Joon Kang. "High-Performance Flexible Energy Storage Devices Based on Graphene Decorated with Flower-Shaped MoS2 Heterostructures." Micromachines 14, no. 2 (January 23, 2023): 297. http://dx.doi.org/10.3390/mi14020297.
Повний текст джерелаZhang, Yue, Xiangzhe Zhang, Chuyun Deng, Qi Ge, Junjie Huang, Jie Lu, Gaoxiang Lin, Zekai Weng, Xueao Zhang, and Weiwei Cai. "Effect of graphene grain boundaries on MoS2/graphene heterostructures." Chinese Physics B 29, no. 6 (June 2020): 067403. http://dx.doi.org/10.1088/1674-1056/ab8a37.
Повний текст джерелаShen, Yi Yang. "MoS2/Graphene Heterostructure Anode for Li-Ion Battery Application: A First-Principles Study." Key Engineering Materials 896 (August 10, 2021): 53–59. http://dx.doi.org/10.4028/www.scientific.net/kem.896.53.
Повний текст джерелаHoussa, M., K. Iordanidou, A. Dabral, A. Lu, R. Meng, G. Pourtois, V. V. Afanas'ev, and A. Stesmans. "Contact resistance at graphene/MoS2 lateral heterostructures." Applied Physics Letters 114, no. 16 (April 22, 2019): 163101. http://dx.doi.org/10.1063/1.5083133.
Повний текст джерелаDing, Zhiwei, Qing-Xiang Pei, Jin-Wu Jiang, Wenxuan Huang, and Yong-Wei Zhang. "Interfacial thermal conductance in graphene/MoS2 heterostructures." Carbon 96 (January 2016): 888–96. http://dx.doi.org/10.1016/j.carbon.2015.10.046.
Повний текст джерелаZhang, Run-Sen, and Jin-Wu Jiang. "Effect of misfit strain on the thermal expansion coefficient of graphene/MoS2 van der Waals heterostructures." Physical Chemistry Chemical Physics 24, no. 1 (2022): 156–62. http://dx.doi.org/10.1039/d1cp04655a.
Повний текст джерелаSong, Shun, Jian Gong, Xiangwei Jiang, and Shenyuan Yang. "Influence of the interface structure and strain on the rectification performance of lateral MoS2/graphene heterostructure devices." Physical Chemistry Chemical Physics 24, no. 4 (2022): 2265–74. http://dx.doi.org/10.1039/d1cp04502d.
Повний текст джерелаChen, Yichuan, and Mengtao Sun. "Two-dimensional WS2/MoS2 heterostructures: properties and applications." Nanoscale 13, no. 11 (2021): 5594–619. http://dx.doi.org/10.1039/d1nr00455g.
Повний текст джерелаSitek, Jakub, Iwona Pasternak, Karolina Czerniak-Łosiewicz, Michał Świniarski, Paweł P. Michałowski, Clifford McAleese, Xiaochen Wang, et al. "Three-step, transfer-free growth of MoS2/WS2/graphene vertical van der Waals heterostructure." 2D Materials 9, no. 2 (April 1, 2022): 025030. http://dx.doi.org/10.1088/2053-1583/ac5f6d.
Повний текст джерелаCoy-Diaz, Horacio, François Bertran, Chaoyu Chen, José Avila, Julien Rault, Patrick Le Fèvre, Maria C. Asensio, and Matthias Batzill. "Band renormalization and spin polarization of MoS2 in graphene/MoS2 heterostructures." physica status solidi (RRL) - Rapid Research Letters 9, no. 12 (November 4, 2015): 701–6. http://dx.doi.org/10.1002/pssr.201510346.
Повний текст джерелаWu, Xin, Ruxue Yang, Xiyue Chen, and Wei Liu. "Fabrication of Nanopore in MoS2-Graphene vdW Heterostructure by Ion Beam Irradiation and the Mechanical Performance." Nanomaterials 12, no. 2 (January 7, 2022): 196. http://dx.doi.org/10.3390/nano12020196.
Повний текст джерелаVan Nguyen, Khoe, Shih-Yen Lin, and Yia-Chung Chang. "Transfer current in p-type graphene/MoS2 heterostructures." Physica E: Low-dimensional Systems and Nanostructures 125 (January 2021): 114383. http://dx.doi.org/10.1016/j.physe.2020.114383.
Повний текст джерелаRoy, Kallol, Medini Padmanabhan, Srijit Goswami, T. Phanindra Sai, Sanjeev Kaushal, and Arindam Ghosh. "Optically active heterostructures of graphene and ultrathin MoS2." Solid State Communications 175-176 (December 2013): 35–42. http://dx.doi.org/10.1016/j.ssc.2013.09.021.
Повний текст джерелаBertolazzi, Simone, Daria Krasnozhon, and Andras Kis. "Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures." ACS Nano 7, no. 4 (March 19, 2013): 3246–52. http://dx.doi.org/10.1021/nn3059136.
Повний текст джерелаZhang, Zhihao, and Jiaying Ye. "Free-Standing Multilayer MoS2-BP Heterostructures for High Performance Self-Powered Photodetector." Journal of Physics: Conference Series 2440, no. 1 (January 1, 2023): 012011. http://dx.doi.org/10.1088/1742-6596/2440/1/012011.
Повний текст джерелаLi, Xiaowen, Chuanwei Huang, Songbai Hu, Bei Deng, Zuhuang Chen, Wenqiao Han, and Lang Chen. "Negative and near-zero Poisson's ratios in 2D graphene/MoS2 and graphene/h-BN heterostructures." Journal of Materials Chemistry C 8, no. 12 (2020): 4021–29. http://dx.doi.org/10.1039/c9tc06424a.
Повний текст джерелаGupta, Sanju, Panagiota Pimenidou, Miguel Garcia, Shivanshi Das, and Nicholas Dimakis. "Dataset of optical and electronic properties for MoS2-graphene vertical heterostructures and MoS2-graphene-Au heterointerfaces." Data in Brief 49 (August 2023): 109341. http://dx.doi.org/10.1016/j.dib.2023.109341.
Повний текст джерелаLu, Yueheng, Xiao Sun, Huabin Zhou, Haojie Lai, Ran Liu, Pengyi Liu, Yang Zhou, and Weiguang Xie. "A high-performance and broadband two-dimensional perovskite-based photodetector via van der Waals integration." Applied Physics Letters 121, no. 16 (October 17, 2022): 161104. http://dx.doi.org/10.1063/5.0116505.
Повний текст джерелаLarentis, Stefano, John R. Tolsma, Babak Fallahazad, David C. Dillen, Kyounghwan Kim, Allan H. MacDonald, and Emanuel Tutuc. "Band Offset and Negative Compressibility in Graphene-MoS2 Heterostructures." Nano Letters 14, no. 4 (March 19, 2014): 2039–45. http://dx.doi.org/10.1021/nl500212s.
Повний текст джерелаKim, Hyeong-U., Mansu Kim, Yinhua Jin, Yuhwan Hyeon, Ki Seok Kim, Byeong-Seon An, Cheol-Woong Yang, et al. "Low-temperature wafer-scale growth of MoS2-graphene heterostructures." Applied Surface Science 470 (March 2019): 129–34. http://dx.doi.org/10.1016/j.apsusc.2018.11.126.
Повний текст джерелаGu, Huahao, Longsheng Zhang, Yunpeng Huang, Youfang Zhang, Wei Fan, and Tianxi Liu. "Quasi-one-dimensional graphene nanoribbon-supported MoS2 nanosheets for enhanced hydrogen evolution reaction." RSC Advances 6, no. 17 (2016): 13757–65. http://dx.doi.org/10.1039/c5ra27180k.
Повний текст джерелаPhan, Thi Thuy Trang, Thi Thanh Huong Nguyen, Ha Tran Huu, Thanh Tam Truong, Le Tuan Nguyen, Van Thang Nguyen, Vy Anh Tran, Thi Lan Nguyen, Hong Lien Nguyen, and Vien Vo. "Hydrothermal Synthesis of MoS2/rGO Heterostructures for Photocatalytic Degradation of Rhodamine B under Visible Light." Journal of Nanomaterials 2021 (July 28, 2021): 1–11. http://dx.doi.org/10.1155/2021/9941202.
Повний текст джерелаNing, Feng, Dan Wang, Ye-Xin Feng, Li-Ming Tang, Yong Zhang, and Ke-Qiu Chen. "Strong interfacial interaction and enhanced optical absorption in graphene/InAs and MoS2/InAs heterostructures." Journal of Materials Chemistry C 5, no. 36 (2017): 9429–38. http://dx.doi.org/10.1039/c7tc03350h.
Повний текст джерелаZan, Wenyan, Wei Geng, Huanxiang Liu, and Xiaojun Yao. "Electric-field and strain-tunable electronic properties of MoS2/h-BN/graphene vertical heterostructures." Physical Chemistry Chemical Physics 18, no. 4 (2016): 3159–64. http://dx.doi.org/10.1039/c5cp06029j.
Повний текст джерелаNeupane, Hari Krishna, and Narayan Prasad Adhikari. "Structural, electronic and magnetic properties of S sites vacancy defects graphene/MoS2 van der Waals heterostructures: First-principles study." International Journal of Computational Materials Science and Engineering 10, no. 02 (June 2021): 2150009. http://dx.doi.org/10.1142/s2047684121500093.
Повний текст джерелаÖzkan, Doğuş, M. Cenk Özekinci, Zeynep Taşlıçukur Öztürk, and Egemen Sulukan. "Two Dimensional Materials for Military Applications." Defence Science Journal 70, no. 6 (October 12, 2020): 672–81. http://dx.doi.org/10.14429/dsj.70.15879.
Повний текст джерелаAlem, Nasim. "(Invited, Digital Presentation) Synthesis and Atomic Scale Characterization of 2D Layered Heterostructures Atom by Atom: An Ultra-high Resolution Aberration-corrected Electron Microscopy Study." ECS Meeting Abstracts MA2022-01, no. 12 (July 7, 2022): 878. http://dx.doi.org/10.1149/ma2022-0112878mtgabs.
Повний текст джерелаLin, Yuxuan, Qiong Ma, Pin-Chun Shen, Batyr Ilyas, Yaqing Bie, Albert Liao, Emre Ergeçen, et al. "Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions." Science Advances 5, no. 6 (June 2019): eaav1493. http://dx.doi.org/10.1126/sciadv.aav1493.
Повний текст джерелаYue, Yuchen, Yiyu Feng, Jiancui Chen, Daihua Zhang, and Wei Feng. "Two-dimensional large-scale bandgap-tunable monolayer MoS2(1−x)Se2x/graphene heterostructures for phototransistors." Journal of Materials Chemistry C 5, no. 24 (2017): 5887–96. http://dx.doi.org/10.1039/c7tc00951h.
Повний текст джерелаNeupane, Hari Krishna, and Narayan Prasad Adhikari. "Adsorption of Water Molecule in Graphene/MoS2 Heterostructure with Vacancy Defects in Mo Sites." Advances in Condensed Matter Physics 2022 (April 11, 2022): 1–18. http://dx.doi.org/10.1155/2022/2135213.
Повний текст джерелаYunus, Rozan Mohamad, Hiroko Endo, Masaharu Tsuji, and Hiroki Ago. "Vertical heterostructures of MoS2 and graphene nanoribbons grown by two-step chemical vapor deposition for high-gain photodetectors." Physical Chemistry Chemical Physics 17, no. 38 (2015): 25210–15. http://dx.doi.org/10.1039/c5cp03958d.
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