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Статті в журналах з теми "MoS2 graphene heterostructures"
Dong, Haocong, Junzhu Li, Mingguang Chen, Hongwei Wang, Xiaochuan Jiang, Yongguang Xiao, Bo Tian, and Xixiang Zhang. "High-throughput Production of ZnO-MoS2-Graphene Heterostructures for Highly Efficient Photocatalytic Hydrogen Evolution." Materials 12, no. 14 (July 11, 2019): 2233. http://dx.doi.org/10.3390/ma12142233.
Повний текст джерелаXiao, Haodong, Lin Lin, Jia Zhu, Junxiong Guo, Yizhen Ke, Linna Mao, Tianxun Gong, Huanyu Cheng, Wen Huang, and Xiaosheng Zhang. "Highly sensitive and broadband photodetectors based on WSe2/MoS2 heterostructures with van der Waals contact electrodes." Applied Physics Letters 121, no. 2 (July 11, 2022): 023504. http://dx.doi.org/10.1063/5.0100191.
Повний текст джерелаCheng, Beitong, Yong Zhou, Ruomei Jiang, Xule Wang, Shuai Huang, Xingyong Huang, Wei Zhang, et al. "Structural, Electronic and Optical Properties of Some New Trilayer Van de Waals Heterostructures." Nanomaterials 13, no. 9 (May 8, 2023): 1574. http://dx.doi.org/10.3390/nano13091574.
Повний текст джерелаWu, Shuang, Jifen Wang, Huaqing Xie, and Zhixiong Guo. "Interfacial Thermal Conductance across Graphene/MoS2 van der Waals Heterostructures." Energies 13, no. 21 (November 9, 2020): 5851. http://dx.doi.org/10.3390/en13215851.
Повний текст джерелаThompson, Jesse E., Brandon T. Blue, Darian Smalley, Fernand Torres-Davila, Laurene Tetard, Jeremy T. Robinson, and Masahiro Ishigami. "STM Tip-Induced Switching in Molybdenum Disulfide-Based Atomristors." MRS Advances 4, no. 48 (2019): 2609–17. http://dx.doi.org/10.1557/adv.2019.322.
Повний текст джерелаWu, Feng, Zijin Wang, Jiaqi He, Zhenzhe Li, Lijuan Meng, and Xiuyun Zhang. "Effect of 3d Transition Metal Atom Intercalation Concentration on the Electronic and Magnetic Properties of Graphene/MoS2 Heterostructure: A First-Principles Study." Molecules 28, no. 2 (January 4, 2023): 509. http://dx.doi.org/10.3390/molecules28020509.
Повний текст джерелаHan, Tao, Hongxia Liu, Shulong Wang, Shupeng Chen, Kun Yang, and Zhandong Li. "Synthesis and Spectral Characteristics Investigation of the 2D-2D vdWs Heterostructure Materials." International Journal of Molecular Sciences 22, no. 3 (January 27, 2021): 1246. http://dx.doi.org/10.3390/ijms22031246.
Повний текст джерелаGrundmann, Annika, Clifford McAleese, Ben Richard Conran, Andrew Pakes, Dominik Andrzejewski, Tilmar Kümmell, Gerd Bacher, et al. "MOVPE of Large-Scale MoS2/WS2, WS2/MoS2, WS2/Graphene and MoS2/Graphene 2D-2D Heterostructures for Optoelectronic Applications." MRS Advances 5, no. 31-32 (2020): 1625–33. http://dx.doi.org/10.1557/adv.2020.104.
Повний текст джерелаRocha Robledo, Ana K., Mario Flores Salazar, Bárbara A. Muñiz Martínez, Ángel A. Torres-Rosales, Héctor F. Lara-Alfaro, Osvaldo Del Pozo-Zamudio, Edgar A. Cerda-Méndez, Sergio Jiménez-Sandoval, and Andres De Luna Bugallo. "Interlayer charge transfer in supported and suspended MoS2/Graphene/MoS2 vertical heterostructures." PLOS ONE 18, no. 7 (July 25, 2023): e0283834. http://dx.doi.org/10.1371/journal.pone.0283834.
Повний текст джерелаLuu, Thi Ha Thu, Quang Trung Do, Manh Trung Tran, Tu Nguyen, Duy Hung Nguyen, and Thanh Huy Pham. "Optical Properties of 1D ZnO/MoS\(_2\) Heterostructures Synthesized by Thermal Evaporation Method." Communications in Physics 32, no. 3 (June 22, 2022): 319. http://dx.doi.org/10.15625/0868-3166/16867.
Повний текст джерелаДисертації з теми "MoS2 graphene heterostructures"
Nasseri, Mohsen. "NANOSCALE DEVICES CONSISTING OF HETEROSTRUCTURES OF CARBON NANOTUBES AND TWO-DIMENSIONAL LAYERED MATERIALS." UKnowledge, 2018. https://uknowledge.uky.edu/physastron_etds/59.
Повний текст джерелаChen, Zhesheng. "Novel two dimensional material devices : from fabrication to photo-detection." Thesis, Paris 6, 2015. http://www.theses.fr/2015PA066595/document.
Повний текст джерелаNovel two dimensional (2D) semiconductors beyond graphene such as MoS2, GaS, GaSe and InSe are increasingly relevant for emergent applications and devices. In this thesis, we fabricate these 2D samples for photo-detector applications and characterize them with optical microscopy, atomic force microscopy, Raman and photoluminescence (PL) spectroscopy and transmission electron microscopy. Since the interaction of light with the substrate and the ultra-thin photodetector device is critical for its functioning we calculate and measure optical contrast and intensity of light scattered from the device. We also characterize the Raman and PL response as a function of number of layers to study both vibrational properties and the band gap transition. For the device application, we first examine homogenous devices based on few-layer MoS2, GaSe and InSe respectively and find an excellent photoresponsivity in our few-layer MoS2 photo-detector. We then examine several geometries for heterostructure devices, which have the advantage of combining favorable properties of each material to reach better performances. The first example is a graphene/InSe photo-detector where the photoresponsivity increases by four orders of magnitude with respect to a few-layer InSe device while the top graphene layer is also shown to prevent degradation of ultra-thin atomic layers in air. Still more complex graphene/InSe/graphene and graphene/InSe/Au heterostructures show a photovoltaic effect. Finally for the first time, we combine InSe with MoS2 and obtain a high performance device with fast photo-response, photodiode like behavior, uniform photocurrent distribution and high photovoltaic effect
MONSHI, MD Monirojjaman. "Band Gap Engineering of 2D Nanomaterials and Graphene Based Heterostructure Devices." FIU Digital Commons, 2017. http://digitalcommons.fiu.edu/etd/3354.
Повний текст джерелаKvashnin, D. G., P. B. Sorokin, G. Seifert, and L. A. Chernozatonskii. "MoS₂ decoration by Mo-atoms and the MoS₂– Mo–graphene heterostructure: a theoretical study." Royal Society of Chemistry, 2015. https://tud.qucosa.de/id/qucosa%3A36376.
Повний текст джерелаCoy, Diaz Horacio. "Preparation and Characterization of Van der Waals Heterostructures." Scholar Commons, 2016. http://scholarcommons.usf.edu/etd/6212.
Повний текст джерелаDi, Felice Daniela. "Electronic structure and transport in the graphene/MoS₂ heterostructure for the conception of a field effect transistor." Thesis, Université Paris-Saclay (ComUE), 2018. http://www.theses.fr/2018SACLS267/document.
Повний текст джерелаThe isolation of graphene, a single stable layer of graphite, composed by a plane of carbon atoms, demonstrated the possibility to separate a single layer of atomic thickness, called bidimensional (2D) material, from the van der Waals (vdW) solids. Thanks to their stability, 2D materials can be used to form vdW heterostructures, a vertical stack of different 2D crystals maintained together by the vdW forces. In principle, due to the weakness of the vdW interaction, each layer keeps its own global electronic properties. Using a theoretical and computational approach based on the Density Functional Theory (DFT) and Keldish-Green formalism, we have studied graphene/MoS₂ heterostructure. In this work, we are interested in the specific electronic properties of graphene and MoS₂ for the conception of field effect transistor: the high mobility of graphene as a basis for high performance transistor and the gap of MoS₂ able to switch the device. First, the graphene/MoS₂ interface is electronically characterized by analyzing the effects of different orientations between the layers on the electronic properties. We demonstrated that the global electronic properties as bandstructure and Density of State (DOS) are not affected by the orientation, whereas, by mean of Scanning Tunneling Microscope (STM) images, we found that different orientations leads to different local DOS. In the second part, graphene/MoS₂ is used as a very simple and efficient model for Field Effect Transistor. The role of the vdW heterostructure in the transistor operation is analyzed by stacking additional and alternate graphene and MoS₂ layers on the simple graphene/MoS₂ interface. We demonstrated that the shape of the DOS at the gap band edge is the fundamental parameter in the switch velocity of the transistor, whereas the additional layers do not improve the transistor behavior, because of the independence of the interfaces in the vdW heterostructures. However, this demonstrates the possibility to study, in the framework of DFT, the transport properties of more complex vdW heterostructures, separating the single interfaces and reducing drastically the calculation time. The 2D materials are also studied in the role of a tip for STM and Atomic Force Microscopy (AFM). A graphene-like tip, tested on defected MoS₂, is compared with a standard copper tip, and it is found to provide atomic resolution in STM images. In addition, due to vdW interaction with the sample, this tip avoids the contact effect responsible for the transfer of atoms between the tip and the sample. Furthermore, the analysis of defects can be very useful since they induce new peaks in the gap of MoS₂: hence, they can be used to get a peak of current representing an interesting perspective to improve the transistor operation
Paul, Tathagata. "Physics and application of charge transfer in van der Waals heterostructures." Thesis, 2019. https://etd.iisc.ac.in/handle/2005/4503.
Повний текст джерелаRoy, Kallol. "Optoelectronic Properties of Graphene Based Van-der-Waals Hybrids." Thesis, 2017. http://etd.iisc.ac.in/handle/2005/4142.
Повний текст джерелаSahoo, Anindita. "Electrical Transport in the Hybrid Structures of 2D Van Der Waals Materials and Perovskite Oxide." Thesis, 2016. http://etd.iisc.ac.in/handle/2005/2948.
Повний текст джерелаSahoo, Anindita. "Electrical Transport in the Hybrid Structures of 2D Van Der Waals Materials and Perovskite Oxide." Thesis, 2016. http://etd.iisc.ernet.in/handle/2005/2948.
Повний текст джерелаЧастини книг з теми "MoS2 graphene heterostructures"
Giannazzo, Filippo, Gabriele Fisichella, Giuseppe Greco, Patrick Fiorenza, and Fabrizio Roccaforte. "Conductive Atomic Force Microscopy of Two-Dimensional Electron Systems: From AlGaN/GaN Heterostructures to Graphene and MoS2." In Conductive Atomic Force Microscopy, 163–85. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2017. http://dx.doi.org/10.1002/9783527699773.ch7.
Повний текст джерелаRoy, Kallol. "Photoresponse in Graphene-on-MoS$$_2$$ Heterostructures." In Optoelectronic Properties of Graphene-Based van der Waals Hybrids, 141–56. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-59627-9_6.
Повний текст джерелаRoy, Kallol. "Switching Operation with Graphene-on-MoS$$_2$$ Heterostructures." In Optoelectronic Properties of Graphene-Based van der Waals Hybrids, 157–70. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-59627-9_7.
Повний текст джерелаRoy, Kallol. "Bilayer-Graphene-on-MoS$$_2$$ Heterostructures: Channel Bandgap, Transconductance, and Noise." In Optoelectronic Properties of Graphene-Based van der Waals Hybrids, 171–89. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-59627-9_8.
Повний текст джерелаSingh, Sachin, Pravin Kumar Singh, A. K. Sharma, Pooja Lohia, and D. K. Dwivedi. "Sensitivity Enhancement of Graphene and Blue Phosphorene/Mos2 Heterostructure-Based SPR Biosensor Using Gold (Au) Metal Layer: Theoretical Insight." In Lecture Notes in Electrical Engineering, 481–87. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-0312-0_47.
Повний текст джерелаA. Kharadi, Mubashir, Gul Faroz A. Malik, and Farooq A. Khanday. "Photo-Detectors Based on Two Dimensional Materials." In Photodetectors [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.95559.
Повний текст джерелаТези доповідей конференцій з теми "MoS2 graphene heterostructures"
Soavi, G., D. De Fazio, S. R. Tamalampudi, D. Yoon, E. Mostaani, A. R. Botello, S. Dal Conte, G. Cerullo, I. Goykhman, and A. C. Ferrari. "Gate tuneable ultrafast charge transfer in graphene/MoS2 heterostructures." In 2017 Conference on Lasers and Electro-Optics Europe (CLEO/Europe) & European Quantum Electronics Conference (EQEC). IEEE, 2017. http://dx.doi.org/10.1109/cleoe-eqec.2017.8087707.
Повний текст джерелаSingh, Amit, Seunghan Lee, Hoonkyung Lee, and Hiroshi Watanabe. "Dielectric Constant and van der Waals Interlayer Interaction of MoS2-Graphene Heterostructures." In 2020 IEEE 15th International Conference on Nano/Micro Engineered and Molecular System (NEMS). IEEE, 2020. http://dx.doi.org/10.1109/nems50311.2020.9265634.
Повний текст джерелаJadriško, Valentino, Borna Radatović, Borna Pielić, Christoph Gadermaier, Marko Kralj, and Nataša Vujičić. "Structural and optical characterization of nanometer sized MoS2/graphene heterostructures for potential use in optoelectronic devices." In CLEO: Applications and Technology. Washington, D.C.: Optica Publishing Group, 2023. http://dx.doi.org/10.1364/cleo_at.2023.jw2a.123.
Повний текст джерелаP. S., Midhun, Anjala Jayaraj, Savitha Nalini, Asha A. S., Rajeev Kumar K., and Jayaraj M. K. "Synthesis of mono/ few layered MoS2 thin films and graphene: MoS2 van der Waal heterostructures using pulsed laser deposition." In Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI, edited by André-Jean Attias and Balaji Panchapakesan. SPIE, 2019. http://dx.doi.org/10.1117/12.2529185.
Повний текст джерелаLuo, Duan, Jian Tang, Xiaozhe Shen, Fuhao Ji, Jie Yang, Stephen Weathersby, Michael E. Kozina, et al. "Twist-angle-dependent photoresponse in MoS2-graphene van der Waals heterostructures probed by ultrafast electron diffraction." In International Conference on Ultrafast Phenomena. Washington, D.C.: OSA, 2020. http://dx.doi.org/10.1364/up.2020.tu1a.3.
Повний текст джерелаRen, W. P., Q. J. Wang, Q. H. Tan, and Y. K. Liu. "Graphene-MoS2 heterostructure transistor." In Fourteenth National Conference on Laser Technology and Optoelectronics, edited by Huai-Liang Xu, Feng Chen, Lingfei Ji, Buhong Li, Xiaoping Xie, Yuxin Leng, Zhengming Sheng, et al. SPIE, 2019. http://dx.doi.org/10.1117/12.2533593.
Повний текст джерелаSchneider, Daniel S., Eros Reato, Leonardo Lucchesi, Zhenyu Wang, Agata Piacetini, Jens Bolten, Damiano Marian, et al. "MoS2/graphene Lateral Heterostructure Field Effect Transistors." In 2021 Device Research Conference (DRC). IEEE, 2021. http://dx.doi.org/10.1109/drc52342.2021.9467156.
Повний текст джерелаSong, Yingchao, and Zhihong Zhu. "Vertical graphene/MoS2 van der Waals heterostructure photodetector." In Nanophotonics. SPIE, 2023. http://dx.doi.org/10.1117/12.2651571.
Повний текст джерелаAksimsek, Sinan, and Zhipei Sun. "Graphene-MoS2 heterostructure based surface plasmon resonance biosensor." In 2016 URSI International Symposium on Electromagnetic Theory (EMTS). IEEE, 2016. http://dx.doi.org/10.1109/ursi-emts.2016.7571346.
Повний текст джерелаGhobadi, Nayereh. "Molecular dynamics simulation of elastic properties of multilayer MoS2 and graphene/MoS2 heterostructure." In 2017 Iranian Conference on Electrical Engineering (ICEE). IEEE, 2017. http://dx.doi.org/10.1109/iraniancee.2017.7985466.
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