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Статті в журналах з теми "MOM capacitors"

Автор: Grafiati

Опубліковано: 12 жовтня 2022

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1

Omran, Hesham, Hamzah Alahmadi, and Khaled N. Salama. "Matching Properties of Femtofarad and Sub-Femtofarad MOM Capacitors." IEEE Transactions on Circuits and Systems I: Regular Papers 63, no. 6 (June 2016): 763–72. http://dx.doi.org/10.1109/tcsi.2016.2537824.

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2

Park, Kwangwon, and Sanggeun Jeon. "Design of Metal-Oxide-Metal Capacitors in a 65-nm CMOS Process." Journal of Korean Institute of Electromagnetic Engineering and Science 30, no. 10 (October 2019): 846–49. http://dx.doi.org/10.5515/kjkiees.2019.30.10.846.

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3

Hernandez Herrera, H. D., M. Bregant, B. Sanchez, and W. Van Noije. "Onchip digital calibrated 2 mW 12-bit 25 MS/s SAR ADC with reduced input capacitance." Journal of Instrumentation 17, no. 04 (April 1, 2022): C04013. http://dx.doi.org/10.1088/1748-0221/17/04/c04013.

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Abstract We present a 12-bits asynchronous SAR ADC with a low complexity digital on-chip calibration and just 2 pF of total array capacitance. The ADC architecture utilizes a redundant weighting switching of 2 fF MOM capacitors consuming 14 clock-cycles to complete the conversion. Taking advantage of redundancy, the weights of the MSB capacitors are estimated using the LSB array, thus it is possible to digitally compensate for the mismatch non-linearity directly over the ADC output. The circuit consumes 2 mW at 25 MS/s on a core area of 300 μm × 500 μm in 180 nm CMOS technology. ENOB improvements of 0.85 bits were post-layout simulated after calibration. Sample characterization is ongoing.

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4

Jeyaraman, Sathyasree, Venkata Narayana Rao Vanukuru, Deleep Nair, and Anjan Chakravorty. "Modeling of High-Q Conical Inductors and MOM Capacitors for Millimeter- Wave Applications." IEEE Transactions on Electron Devices 67, no. 12 (December 2020): 5646–52. http://dx.doi.org/10.1109/ted.2020.3029236.

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5

Chou, Pang-Yen, Nai-Chen Chen, Mark Po-Hung Lin, and Helmut Graeb. "Matched-Routing Common-Centroid 3-D MOM Capacitors for Low-Power Data Converters." IEEE Transactions on Very Large Scale Integration (VLSI) Systems 25, no. 8 (August 2017): 2234–47. http://dx.doi.org/10.1109/tvlsi.2017.2687980.

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6

Chen, Chixiao, Jixuan Xiang, Huabin Chen, Jun Xu, Fan Ye, Ning Li, and Junyan Ren. "A capacitive DAC with custom 3-D 1-fF MOM unit capacitors optimized for fast-settling routing in high speed SAR ADCs." Journal of Semiconductors 36, no. 5 (May 2015): 055011. http://dx.doi.org/10.1088/1674-4926/36/5/055011.

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7

Zulkifeli, M. A., S. N. Sabki, S. Taking, N. A. Azmi, and S. S. Jamuar. "The Effect of Different Dielectric Materials in Designing High-Performance Metal-Insulator-Metal (MIM) Capacitors." International Journal of Electrical and Computer Engineering (IJECE) 7, no. 3 (June 1, 2017): 1554. http://dx.doi.org/10.11591/ijece.v7i3.pp1554-1561.

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<p>A Metal-Insulator-Metal (MIM) capacitor with high capacitance, high breakdown voltage, and low leakage current is aspired so that the device can be applied in many electronic applications. The most significant factors that affect the MIM capacitor’s performance is the design and the dielectric materials used. In this study, MIM capacitors are simulated using different dielectric materials and different number of dielectric layers from two layers up to seven layers. The effect of the different dielectric constants (<em>k</em>) to the performance of the MIM capacitors is also studied, whereas this work investigates the effect of using low-<em>k</em> and high-<em>k</em> dielectric materials. The dielectric materials used in this study with high-<em>k</em> are Al<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub>, while the low-<em>k</em> dielectric materials are SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>. The results demonstrate that the dielectric materials with high-<em>k</em> produce the highest capacitance. Results also show that metal-Al<sub>2</sub>O<sub>3</sub> interfaces increase the performance of the MIM capacitors. By increasing the number of dielectric layers to seven stacks, the capacitance and breakdown voltage reach its highest value at 0.39 nF and 240 V, respectively.</p>

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8

Xu, Hui, Li Feng Zhang, Qiu Xiang Zhang, Shi Jin Ding, and David Wei Zhang. "Comparison of Reactively Sputtered HfO₂ and HfSi_xO_y Dielectrics for High Density Metal-Insulator-Metal Capacitor Applications." Advanced Materials Research 284-286 (July 2011): 893–99. http://dx.doi.org/10.4028/www.scientific.net/amr.284-286.893.

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The reactively sputtered HfO2 and HfSixOy dielectrics have been investigated comparatively for metal-insulator-metal (MIM) capacitor applications. X-ray photoelectron spectroscopy analyses reveal the presence of Hf-O, Hf-O-Si and Si-O chemical bonds in the HfSixOy films as well as lots of oxygen vacancies. The relative concentrations of Hf-O-Si and Si-O bonds increase with an increment of the power applied to the Si target. Further, it is found that the quadratic voltage coefficient of MIM capacitor decreases with increasing the Si content in the HfSixOy dielectric in despite of a decrease in the resulting capacitance density. The HfSixOy dielectric MIM capacitors with a capacitance density of ~8.4fF/μm2 exhibit a quadratic voltage coefficient of 1840 ppm/V2 at 100kHz, which is much smaller than 2750 ppm/V2 for the HfO2 dielectric MIM capacitors with a density of ~11.8fF/μm2.

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9

Feng, Wu Shiung, and Yi Jung Chen. "Evaluation of Silicon Nitride MIM Capacitors for MMIC Applications." Applied Mechanics and Materials 397-400 (September 2013): 1873–77. http://dx.doi.org/10.4028/www.scientific.net/amm.397-400.1873.

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With the rapid development and huge requirements of wireless communication systems, microwave-monolithic Integrated circuits (MMIC) with high performance and reliability have become very popular and been developed rapidly. The nitride quality and the reliability of the metal-insulator-metal (MIM) capacitor can be also researched based on time-dependent dielectric breakdown (TDDB) theory. In this paper, the various Si3N4 capacitors having different area sizes, aspect ratios and corners were designed with respect to nitride quality and lifetime evaluation. All of MIM capacitors used in this study are manufactured using a special reliability mask, and the test structures include various sizes of capacitors ranging from 10Kμm2 to 250Kμm2 as well as capacitor corner check. The ramp voltage and the constant voltage tests are destructive oftentimes to identify the cause of dielectric failure. Combining these breakdown marks with an optical microscope inspection and cross section check of the 10Kμm2 capacitors as well as corner-structure check are reported in this paper. That can make the identification and classification of dielectric breakdown mechanisms. When the capacitor size is larger than that of 65K-um2, the factor of failure acceleration raises significantly.

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10

Patil, Sumit, Viral Barhate, Ashok Mahajan, Haoyu Xu, Mohammad Rasadujjaman, and Jing Zhang. "Investigation of electrical properties of peald-deposited Ti/Al2O3/Al/Si MIM capacitors." International Journal of Modern Physics B 35, no. 14n16 (June 19, 2021): 2140045. http://dx.doi.org/10.1142/s0217979221400452.

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Анотація:

MIM devices fabricated with 10-nm thickness of Al2O3 high-[Formula: see text] thin film deposited using plasma-enhanced atomic layer deposition (PEALD) system on Al-coated Si substrate were investigated. The structural, morphological and electrical properties of Ti/Al2O3/Al/Si MIM capacitors as-deposited and post-deposition annealed (PDA) at different temperatures were studied and compared. Al2O3 thin films were investigated using atomic force microscopy (AFM) and X-ray diffraction (XRD) and Ti/Al2O3/Al/Si MIM capacitors were characterized by current–voltage ([Formula: see text]–[Formula: see text] and capacitance–voltage ([Formula: see text]–[Formula: see text] measurements. The stable phase formation of Ti/Al2O3/Al/Si MIM capacitor provides the lowest leakage current density in the range of nA/cm2 for as-deposited and annealed films.

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11

ATALAN, Cenk, and Eyup TONGEL. "BENEFITS OF TRANSMISSION LINE METAL-INSULATOR-METAL CAPACITORS IN MASS PRODUCTION OF RF CIRCUITS." International Symposium on Microelectronics 2014, no. 1 (October 1, 2014): 000838–43. http://dx.doi.org/10.4071/isom-thp26.

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Coupling capacitors or DC blocks are essential tuning elements in RF/microwave applications. Their role becomes imperative in cascade amplifiers to isolate drain voltages of preceding MMIC from the gate voltage of the following chip where both RF and DC signals are carried through the same line. The purpose of this study is to explain the benefits of a newly designed thin film coupling capacitor called as transmission line metal-insulator-metal capacitor (TL MIM Cap), which serves as a DC block capacitor in microwave circuits. This novel structure provides a unique solution, which cannot be achieved with traditional single layer ceramic capacitor (SLC) structure. It combines two discrete circuit elements into one: “Microstrip transmission line of required length and width” with a “serially attached coupling capacitor”. Thin film capacitive layers ranged from 0.5pF to 50pF, which are typically needed for microwave frequencies within 1–40 GHz, constructed and embedded into 50 Ohm impedance transmission lines in series. Substrates like quartz, glass, or alumina can be used to minimize losses and to achieve higher RF/microwave performance. We used copper traces as conductive layers for optimal conductivity. After manufacturing TL MIM Caps, we tested several capacitance values for 1pF, 5pF, 15pF and 30pF corresponding to a wide frequency range. The RF tests we performed showed that TL MIM Caps exhibited a minimum of 20dB return loss and a maximum of 0.3 dB insertion loss at 1–40GHz range. We also found our technique comes with some workmanship advantages in high frequency circuit assembly as follows: Traditional coupling capacitor attachment with silver epoxy on top of a microstrip transmission line is a manual operation, which requires well trained and experienced technicians. In contrast, using the TL MIM Caps in our high frequency hybrid modules, we found that the process caused errors were eliminated such as the micro short circuit effect caused by conductive epoxy. Therefore we improved yield in assembly stage of the circuits. In addition, improvements are observed in production processes such as less consumption of adhesives (epoxy), no technician failure caused wastes, elimination of extra curing process to attach capacitors, no short circuit inspection, rework, or re-cure operations to fix assembly errors. Last but not least, blocking capacitors are embedded into the microstrip transmission lines in TL MIM Caps. This ensures that having the lowest possible impedance since very short wire bond exists from the bond pad of the TL MIM Cap to the adjacent circuit element.

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12

Xiong, Li, Jin Hu, Zhao Yang, Xianglin Li, Hang Zhang, and Guanhua Zhang. "Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors." Molecules 27, no. 12 (June 20, 2022): 3951. http://dx.doi.org/10.3390/molecules27123951.

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Анотація:

This study presents the construction and dielectric properties investigation of atomic-layer-deposition Al2O3/TiO2/HfO2 dielectric-film-based metal–insulator–metal (MIM) capacitors. The influence of the dielectric layer material and thickness on the performance of MIM capacitors are also systematically investigated. The morphology and surface roughness of dielectric films for different materials and thicknesses are analyzed via atomic force microscopy (AFM). Among them, the 25 nm Al2O3-based dielectric capacitor exhibits superior comprehensive electrical performance, including a high capacitance density of 7.89 fF·µm−2, desirable breakdown voltage and leakage current of about 12 V and 1.4 × 10−10 A·cm−2, and quadratic voltage coefficient of 303.6 ppm·V−2. Simultaneously, the fabricated capacitor indicates desirable stability in terms of frequency and bias voltage (at 1 MHz), with the corresponding slight capacitance density variation of about 0.52 fF·µm−2 and 0.25 fF·µm−2. Furthermore, the mechanism of the variation in capacitance density and leakage current might be attributed to the Poole–Frenkel emission and charge-trapping effect of the high-k materials. All these results indicate potential applications in integrated passive devices.

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13

Bunel, C., J.-R. Tenailleau, F. Voiron, S. Borel, and A. Lefevre. "Integrated Passive Devices and TSV, a disruptive technology for miniaturization." International Symposium on Microelectronics 2013, no. 1 (January 1, 2013): 000794–98. http://dx.doi.org/10.4071/isom-2013-thp12.

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The 3D Silicon technology of IPDiA is a disruptive technology for miniaturization adopted by the best players in the Medical and Industrial segments for its outstanding performance and reliability demonstrated in harsh environments. The high density capacitors with multiple metal-insulator-metal (MIM) layer stacks in 3D structures reaching 250nF/mm2 already in production for several years is at the forefront of the research program where CEA-Leti and IPDiA are jointly providing innovative platforms for customers who want to combine these capacitors with Through Silicon Vias in order to demonstrate new technological concepts. The via last approach selected by IPDIA allows large possibility of integration combining TSV with active or passive devices such as High-density trench capacitors, MIM capacitors, Resistors, High-Q inductors or Zener diodes. In this paper, the interaction between TSV and IPD will be studied. Emphasis will be placed on the robustness of the 3D trench capacitor technology. Examples of applications using chip-to-chip interconnections through a passive TSV interposer in a 3D IC integration system-in-package (SiP) will be illustrated.

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14

Luo, Ya Feng, Dan Xie, Yong Yuan Zang, Rui Song, Tian Ling Ren, and Li Tian Liu. "Inducing Layer Dependence of BiFeO₃ Based Multilayer Capacitors." Advanced Materials Research 60-61 (January 2009): 256–59. http://dx.doi.org/10.4028/www.scientific.net/amr.60-61.256.

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Multifunctional BiFeO3 (BFO) thin films were deposited on Bi3.15Nd0.85Ti3O12 (BNdT)/Pt and Pb(Zr1−x,Tix)O3 (PZT)/Pt substrates respectively by sol-gel process. The ferroelectric properties were studied for Metal-Ferroelectric-Mental (MFM) capacitors. The MFM structure exhibited well clockwise capacitance-voltage hysteresis loops due to the ferroelectric polarization of multilayer thin films achieved. The remnant polarization (2Pr) of the BFO/PZT and BFO/PZT multilayer capacitors were 45.1μC/cm2 and 23.2μC/cm2, respectively at the applied voltage of 8V. The leakage current of Pt/BFO/BNdT/Pt is about 3×10-5A/㎝2 at applied voltage of 4V, one order smaller than Pt/BFO/PZT/Pt capacitor. For the BFO/BNdT/Pt, it exhibited a weak saturated ferromagnetic response at room temperature and the multilayer was anti-ferromagnetic. However, for the BFO/PZT/Pt, well-developed M-H loops together with remnant magnetizations can be observed in at room temperature. The highest saturation magnetizations (Ms) of both capacitors were measured to be 2.47emu/cm3.

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15

Gaborieau, Sophie, Catherine Bunel, and Franck Murray. "3D Passive Integrated Capacitors Towards Even Higher Integration." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, DPC (January 1, 2010): 001907–30. http://dx.doi.org/10.4071/2010dpc-wp32.

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IPDIA is involved in Silicon based 3D-IPD advanced technology. This very flexible technology is using standard processing techniques to integrate passive components such as inductors, resistors or capacitors into a silicon substrate. 3D high-density capacitor is at the forefront of IPDIA development program. First process generation with 25nF/mm2 and second generation reaching 80nF/mm2 have been in production for several years. The third generation with multiple metal-insulator-metal (MIM) layer stacks in the pores is reaching 250nF/mm2 and is being qualified now. Intrinsic low parasitic elements of these capacitors (low ESR and ESL) make it very attractive for DC decoupling and very competitive with the ceramic technology. Assembly can be performed using standard reflow soldering and its low profile also allows PICS capacitor integration in embedded module board technology. Sensors, healthcare and medical applications can benefit from this new development. To enable even higher integration, development activities are now focused on the third and fourth generation of high-density capacitors targeting ambitious 1μF/mm2. In this presentation, main characteristics of the PICS high-density capacitors will be described emphasizing on its capability, main applications and advantages versus discrete components. Then, in a second part, challenges raised by the increase of the capacitor density while keeping an acceptable breakdown voltage will be discussed. This includes the integration of high-k materials with adequate electrode and the research for maximizing the 3D silicon surface.

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16

Kwon, Hyuk Min, Sung Kyu Kwon, Woon Il Choi, Seung Yong Sung, Jong Kwan Shin, Chang Yong Kang, Raj Jammy, and Hi Deok Lee. "RF Characteristics of SiO₂/HfO₂/SiO₂ MIM Capacitor." Advanced Materials Research 658 (January 2013): 112–15. http://dx.doi.org/10.4028/www.scientific.net/amr.658.112.

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RF characteristics of metal-insulator-metal (MIM) capacitors with SiO2/HfO2/SiO2 (SHS) were investigated using an equivalent circuit model that is associated with the main impedance ZMIM.cap and the substrate-related conductance Ysub. However, the parasitic capacitance in Ysub was lower than that of another element component in ZMIM.cap, which makes difficult for accurate RF modeling because the parasitic component was dominant at high frequency regions. As low parasitic component is eliminated from the modeling, the extracted capacitance for SHS MIM capacitor was stable up to 20 GHz. The Q-factor and resonant frequency (fr) point of SHS structure are 23.9 at 1 GHz and 9.76 GHz, respectively.

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17

Murray, Jack, Wayne Huebner, Matthew J. O’Keefe, Kristina Wilder, Ryan Eatinger, William Kuhn, Daniel S. Krueger, and J. Ambrose Wolf. "Sputter deposition of thin film MIM capacitors on LTCC substrates for RF bypass and filtering applications." International Symposium on Microelectronics 2011, no. 1 (January 1, 2011): 000747–52. http://dx.doi.org/10.4071/isom-2011-wp3-paper3.

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Thin film capacitors for RF bypass and filtering applications were sputter deposited onto low temperature co-fired ceramic (LTCC) substrates. The capacitors were configured in a metal-insulator-metal (MIM) design featuring 200 nm thick Al electrodes and a 300 nm thick Al2O3 dielectric layer, with dimensions varied between ∼150×150 μm and ∼750×750 μm. DC current-voltage measurements (E ≤ 5 MV/cm) coupled with impedance analysis (≤15 MHz) was used to characterize the resulting devices. More than 90% of the devices functioned as capacitors with high DC resistance (>20 MΩ) and low loss (tan δ <0.1). A second set of capacitors were made under the same experimental conditions with device geometries optimized for high frequency (≥200 MHz) applications. These capacitors featured temperature coefficient of capacitance (TCC) values between 500 and 1000 ppm/°C as well as low loss and high self-resonant frequency performance (ESR <0.6 Ohms at self-resonance of 5.7 GHz for 82 pF). Capacitance and loss values were comparable between the capacitor structures of similar areas at the different frequency regimes.

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18

Kebbati, Y., P. S. Allaume, and Y. Bennani. "Memristor, Memcapacitor, Meminductor : Models and Experimental Circuit Emulators." Engineering, Technology & Applied Science Research 12, no. 3 (June 6, 2022): 8683–87. http://dx.doi.org/10.48084/etasr.4882.

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Before 1971, the number of passive electrical components was limited to three: resistor, capacitor, and inductor. In 1971, Pr. Chua predicted the existence of a fourth element, called memristor, since it corresponds to a resistor with memory behavior. Several years later, the concept of memory circuit was extended to capacitors and inductors. This paper proposes mathematical models for mem-elements, validated by Matlab and experimental circuit emulators for memcapacitor and meminductor. The experimental results show a good fit between theory, Ltspice simulations, and emulation circuits.

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19

Chang, Sung-Keun, and Youn-Jang Kim. "The resistance characterization of OTP device using anti-fuse MOS capacitor after programming." Journal of the Korea Academia-Industrial cooperation Society 13, no. 6 (June 30, 2012): 2697–701. http://dx.doi.org/10.5762/kais.2012.13.6.2697.

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20

Kannadassan, D., Kadiyam Rajshekar, Dudekula Shaikshavali, Aparna Sanal, Maryam Shojaei Baghini, and P. S. Mallick. "Modeling of Field Dependent Maxwell-Wagner Interfacial Capacitance for Bilayer Metal-Insulator-Metal (MIM) Capacitors." Advanced Science Letters 24, no. 8 (August 1, 2018): 6008–12. http://dx.doi.org/10.1166/asl.2018.12236.

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Анотація:

In this letter, we have presented the modeling of field dependent Maxwell-Wagner interfacial capacitance for bilayer Metal-Insulator-Metal (MIM) capacitors. The model was verified with measured capacitance–voltage characteristics of fabricated bilayer Al2O3/TiO2 MIM capacitors. The model reveals the origin of voltage linearity of MIM capacitors at low frequencies (<10 kHz). The proposed model for bilayer/multilayer MIM capacitors is very useful tool to design circuits for mixed signal, analog and digital circuits with low variation of capacitance for change in voltage.

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21

Yu, Hanyeong, and Changhwan Shin. "Impact of Rapid-Thermal-Annealing Temperature on the Polarization Characteristics of a PZT-Based Ferroelectric Capacitor." Electronics 10, no. 11 (May 31, 2021): 1324. http://dx.doi.org/10.3390/electronics10111324.

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A metal-ferroelectric-metal (MFM) capacitor was fabricated to investigate the effect of the rate-of-change of temperature in the rapid thermal annealing (RTA) process on the physical properties of the MFM capacitor’s ferroelectric layer [lead zirconate oxide (PZT)]. Remnant polarization (2 × Pr) is measured and monitored while performing the RTA process at 500 °C–700 °C. It turned out that, for a given target/final temperature in the RTA process, 2Pr of the ferroelectric layer decreases with a higher rate-of-change of temperature. This can provide a way to adjust the properties of the PZT layer, depending on the RTA process condition (i.e., using various rate-of-changes of temperature) for a given final/target temperature.

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22

Chu, Tsui Ping, Peng Yang, Evie S. Kho, Yong Kheng Ang, and Swee Hua Tia. "Linearity Improvement on MIM Capacitors." ECS Transactions 34, no. 1 (December 16, 2019): 119–24. http://dx.doi.org/10.1149/1.3567570.

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23

Nikfalazar, Mohammad, Alex Wiens, Morten Mikolajek, Andreas Friederich, Christian Kohler, Mojtaba Sohrabi, Yuliang Zheng, et al. "Tunable Phase Shifter Based on Inkjet-Printed Ferroelectric MIM Varactors." Frequenz 69, no. 1-2 (December 20, 2014): 39–46. http://dx.doi.org/10.1515/freq-2014-0120.

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Анотація:

Abstract This paper presents a new method for the fabrication of tunable multilayer ferroelectric components based on inkjet printing. Inkjet printing is a low-cost technology for selective film fabrication and has high potential for the preparation of tunable dielectric layers for radio frequency and microwave applications. With this technology, tunable metal-insulator-metal (MIM) capacitor is fabricated, that is composed of inkjet-printed Barium-Strontium-Titanate striplines and photo-lithographically structured gold electrodes. Compared to coplanar capacitors, such MIM varactors require significantly lower DC-voltage for tuning. By applying 20 V across a 1 μm-thick BST film, a tunability of 33% is achieved at 8 GHz and tunability of 60% by applying 50 V. To demonstrate the field of application of this MIM varactor, a tunable phase shifter is designed and fabricated at 8 GHz. A phase shift of 143° and a figure of merit (FoM) of 28°/dB are achieved by applying maximum 50 V tuning voltage.

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24

Michalas, Loukas, Matroni Koutsoureli, Eleni Papandreou, Anestis Gantis, and George Papaioannou. "A MIM capacitor study of dielectric charging for RF MEMS capacitive switches." Facta universitatis - series: Electronics and Energetics 28, no. 1 (2015): 113–22. http://dx.doi.org/10.2298/fuee1501113m.

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Анотація:

MIM capacitors are considered equally important devices for the assessment of dielectric charging in RF MEMS capacitive switches. Beside the obvious similarities between the down state condition of RF MEMS and MIM capacitors there are also some important differences. The paper aims to introduce a novel approach to the study of dielectric charging in MEMS with the aid of MIM capacitors by combining experimental results obtained by the application of DC, Charging Transient and Kelvin Probe techniques. The strengths and weaknesses are discussed in conjunction with experimental results obtained on SiNx based MIM capacitors and MEMS capacitive switches fabricated under the same conditions.

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25

Jang, Chan-Hee, Hyun-Seop Kim, Hyungtak Kim, and Ho-Young Cha. "Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO2 Films." Materials 15, no. 6 (March 12, 2022): 2097. http://dx.doi.org/10.3390/ma15062097.

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Анотація:

In this study, we evaluated the temperature- and frequency-dependent ferroelectric characteristics of TiN/undoped HfO2/TiN metal-ferroelectric-metal (MFM) capacitors in which an undoped HfO2 film was deposited through atomic layer deposition (ALD). Successful ferroelectric characteristics were achieved after postdeposition annealing at 650 °C, which exhibited a remanent polarization of 8 μC/cm2 and a coercive electric field of 1.6 MV/cm at 25 °C (room temperature). The ferroelectric property was maintained at 200 °C and decreased as the temperature increased. The ferroelectric property was completely lost above 320 °C and fully recovered after cooling. The frequency dependency was evaluated by bias-dependent capacitance–voltage and s-parameter measurements, which indicated that the ferroelectric property was maintained up to several hundred MHz. This study reveals the ultimate limitations of the application of an undoped HfO2 MFM capacitor.

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26

Mise, Nobuyuki, Arito Ogawa, Osamu Tonomura, Tomoko Sekiguchi, Sadayoshi Horii, Hideharu Itatani, Tatsuyuki Saito, et al. "Theoretical Screening of Candidate Materials for DRAM Capacitors and Experimental Demonstration of a Cubic-Hafnia MIM Capacitor." IEEE Transactions on Electron Devices 57, no. 9 (September 2010): 2080–86. http://dx.doi.org/10.1109/ted.2010.2052715.

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27

Mahata, C., M. K. Bera, M. K. Hota, T. Das, S. Mallik, B. Majhi, S. Verma, P. K. Bose, and C. K. Maiti. "High performance TaYOx-based MIM capacitors." Microelectronic Engineering 86, no. 11 (November 2009): 2180–86. http://dx.doi.org/10.1016/j.mee.2009.03.025.

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28

Blomberg, T., Ch Wenger, C. Baristiran Kaynak, G. Ruhl, and P. Baumann. "ALD grown NbTaO based MIM capacitors." Microelectronic Engineering 88, no. 8 (August 2011): 2447–51. http://dx.doi.org/10.1016/j.mee.2011.01.050.

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29

Hota, Mrinal K., Chandreswar Mahata, Chandan K. Sarkar, and C. K. Maiti. "High Density MIM Capacitors Using HfAlOx." ECS Transactions 25, no. 6 (December 17, 2019): 201–7. http://dx.doi.org/10.1149/1.3206620.

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30

Wolf, Ambrose, Ken Peterson, Matt O'Keefe, Wayne Huebner, and Bill Kuhn. "Fully Integrated Applications of Thin Films on Low Temperature Cofired Ceramic (LTCC)." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, CICMT (September 1, 2012): 000339–40. http://dx.doi.org/10.4071/cicmt-2012-wa33.

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Анотація:

Thin film multilayers have previously been introduced on multilayer low temperature cofired ceramic (LTCC), as well as initial thin film capacitors on LTCC. The ruggedness of a multipurpose Ti/Cu/Pt/Au stack for connectivity and RF conductivity has continued to benefit fabrication and reliability in state of-the-art modules, while the capacitors have followed the traditional Metal-Insulator-Metal (MIM) style. The full integration of thin film passives with thin film connectivity traces is presented. Certain passives, such as capacitors, require specifically tailored and separately patterned thin film (multi-)layers, including a dielectric. Different capacitance values are achieved by variation of both the insulator layer thickness and the active area of the capacitor. Other passives, such as filters, require only the conductor – a single thin film multilayer. This can be patterned from the same connectivity thin film material (Ti/Cu/Pt/Au), or a specially tailored thin film material (e.g. Ti/Cu/Au) can be deposited. Both versions are described, including process and integration details. Examples are discussed, ranging from patterning for maximum tolerances, to space and performance-optimized designs. Cross-sectional issues associated with integration are also highlighted in the discussion.

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31

Li, Guang Yu, Jin Bo Liu, Xiang Zhi Yu, and Hong Min Gao. "Research on the Algorithm for Capacitance of Charged Plane Conductors Based on MoM." Applied Mechanics and Materials 401-403 (September 2013): 509–13. http://dx.doi.org/10.4028/www.scientific.net/amm.401-403.509.

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Анотація:

For the analysis of plane charged conductors by the method-of-moments (MoM), the basic idea and a simple derivation of the formulas is presented in this paper. Veneer conductor capacitor and dual-board conductor capacitor are respectively solved by the method-of-moments, with piecewise function as the basis function and δ function as the weight function. The comparison of the accurate solution illustrates the method-of-moments with good accuracy.

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32

Onyango, Calvin, Susan Karenya Luvitaa, Kibet Lagat, Alexandra Hüsken, Inga Smit, and Marcus Schmidt. "Utilisation of Amaranth and Finger Millet as Ingredients in Wheat Dough and Bread for Increased Agro-Food Biodiversity." Foods 11, no. 7 (March 22, 2022): 911. http://dx.doi.org/10.3390/foods11070911.

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Анотація:

Amaranth and finger millet are important food security crops in Africa but show poor bread making ability, even in composite wheat breads. Malting and steaming are promising approaches to improve composite bread quality, which have not been fully explored yet. Therefore, in this study, wheat was blended with native, steamed or malted finger millet or amaranth in the ratio of 70:30. Wheat/native amaranth (WHE-NAM) and wheat/malted amaranth (WHE-MAM) had longer dough development times and higher dough stabilities, water absorption capacities and farinograph quality numbers than wheat/steamed amaranth (WHE-SAM), wheat/native finger millet (WHE-NFM), wheat/steamed finger millet (WHE-SFM) or wheat/malted finger millet (WHE-MFM). The WHE-NAM and WHE-MAM breads had lower crumb firmness and chewiness, higher resilience and cohesiveness and lighter colours than WHE-NFM, WHE-SFM and WHE-MFM. Starch and protein digestibility of composite breads were not different (p > 0.05) from each other and ranged between 95–98% and 83–91%, respectively. Composite breads had higher ash (1.9–2.5 g/100 g), dietary fibre (5.7–7.1 g/100 g), phenolic acid (60–122 mg/100 g) and phytate contents (551–669 mg/100 g) than wheat bread (ash 1.6 g/100 g; dietary fibre 4.5 g/100 g; phenolic acids 59 mg/100 g; phytate 170 mg/100 g). The WHE-NAM and WHE-MAM breads possessed the best crumb texture and nutritional profile among the composite breads.

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33

Jang, Jae-Hyung, Hyuk-Min Kwon, Ho-Young Kwak, Sung-Kyu Kwon, Seon-Man Hwang, Seung-Yong Sung, Jong-Kwan Shin, and Hi-Deok Lee. "Temperature Dependence of Matching Characteristics of MIM Capacitor." Journal of the Institute of Electronics Engineers of Korea 50, no. 5 (May 25, 2013): 61–66. http://dx.doi.org/10.5573/ieek.2013.50.5.061.

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34

Roesch, William J., and Dorothy June M. Hamada. "Discovering and reducing defects in MIM capacitors." Microelectronics Reliability 81 (February 2018): 299–305. http://dx.doi.org/10.1016/j.microrel.2017.10.021.

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35

Yang, M. Y., C. H. Huang, A. Chin, Chunxiang Zhu, M. F. Li, and Dim-Lee Kwong. "High-density MIM capacitors using AlTaOx dielectrics." IEEE Electron Device Letters 24, no. 5 (May 2003): 306–8. http://dx.doi.org/10.1109/led.2003.812572.

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36

Perng, Tsu-Hsiu, Chao-Hsin Chien, Ching-Wei Chen, Peer Lehnen, and Chun-Yen Chang. "High-density MIM capacitors with HfO2 dielectrics." Thin Solid Films 469-470 (December 2004): 345–49. http://dx.doi.org/10.1016/j.tsf.2004.08.148.

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37

Sadhir, Virender K., and Inder J. Bahl. "An accurate distributed model for MIM capacitors." Microwave and Optical Technology Letters 4, no. 6 (May 1991): 219–22. http://dx.doi.org/10.1002/mop.4650040603.

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38

EMMANUEL, DEFAŸ, BLANCHET FLORIA, BILLARD CHRISTOPHE, FORT CHARLES, DAVID JEAN-BAPTISTE, LOMBARD LAURENT, and GALERA LUDIVINE. "Integrated MIM Perovskite Capacitors for RF Applications." Integrated Ferroelectrics 66, no. 1 (January 2004): 231–42. http://dx.doi.org/10.1080/10584580490895392.

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39

Wang, Z., J. Ackaert, C. Salm, F. G. Kuper, M. Tack, E. DeBacker, P. Coppens, L. DeSchepper, and B. Vlachakis. "Plasma-Charging Damage of Floating MIM Capacitors." IEEE Transactions on Electron Devices 51, no. 6 (June 2004): 1017–24. http://dx.doi.org/10.1109/ted.2004.829518.

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40

Ravasio, Marcello. "Disposable C_Spacer flow for building MIM capacitors." Microelectronic Engineering 239-240 (February 2021): 111525. http://dx.doi.org/10.1016/j.mee.2021.111525.

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41

Lee, Taeseop, and Sang-Mo Koo. "Electrical Characteristics of Carbon Nanotube Embedded 4H-SiC MOS Capacitors." Journal of the Korean Institute of Electrical and Electronic Material Engineers 27, no. 9 (September 1, 2014): 547–50. http://dx.doi.org/10.4313/jkem.2014.27.9.547.

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42

ITANO, Yuka, Taishi KITANO, Yuta SAKAMOTO, Kiyotaka KOMOKU, Takayuki MORISHITA, and Nobuyuki ITOH. "Modeling and Layout Optimization of MOM Capacitor for High-Frequency Applications." IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences E101.A, no. 2 (2018): 441–46. http://dx.doi.org/10.1587/transfun.e101.a.441.

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43

Nieminen, Heikki, Jari Hyyryläinen, Timo Veijola, Tapani Ryhänen, and Vladimir Ermolov. "Transient capacitance measurement of MEM capacitor." Sensors and Actuators A: Physical 117, no. 2 (January 2005): 267–72. http://dx.doi.org/10.1016/j.sna.2004.06.023.

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44

Bartolucci, G., F. Giannini, E. Limiti, and S. P. Marsh. "MIM capacitor modeling: a planar approach." IEEE Transactions on Microwave Theory and Techniques 43, no. 4 (April 1995): 901–3. http://dx.doi.org/10.1109/22.375270.

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45

Jang, Jae-Hyung, Hyuk-Min Kwon, Yi-Jung Jung, Ho-Young Kwak, Sung-Gyu Kwon, Hwan-Hee Lee, Sung-Yong Go, Weon-Mook Lee, Song-Jae Lee, and Hi-Deok Lee. "Analysis of Matching Characteristics of MIM Capacitors with Al2O3/HfO2/Al2O3." Journal of the Korean Institute of Electrical and Electronic Material Engineers 25, no. 1 (January 1, 2012): 1–5. http://dx.doi.org/10.4313/jkem.2012.25.1.1.

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46

Hwang, Young-Gwan, and Seung-Min Lee. "Ionizing Radiation Sensitivity Analysis of the Structural Characteristic for the MOS Capacitors." Transactions of The Korean Institute of Electrical Engineers 62, no. 7 (July 1, 2013): 963–68. http://dx.doi.org/10.5370/kiee.2013.62.7.963.

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47

Kang, Min-Gyu, Kwang-Hwan Cho, Chil-hyoung Lee, Chong-Yun Kang, Seok-Jin Yoon, and Sang-Sig Kim. "?Amorphous Sr0.8Bi2.2Ta2O9 Thin Films for MIM Embedded Capacitors." Journal of the Korean Physical Society 57, no. 4(1) (October 15, 2010): 1062–65. http://dx.doi.org/10.3938/jkps.57.1062.

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48

Wenger, Ch, R. Sorge, T. Schroeder, A. U. Mane, G. Lippert, G. Lupina, J. Dąbrowski, P. Zaumseil, and H. J. Muessig. "MIM capacitors using amorphous high-k PrTixOy dielectrics." Microelectronic Engineering 80 (June 2005): 313–16. http://dx.doi.org/10.1016/j.mee.2005.04.018.

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49

Muñoz-Gamarra, J. L., A. Uranga, and N. Barniol. "NEMS Switches Monolithically Fabricated on CMOS MIM Capacitors." Procedia Engineering 87 (2014): 943–46. http://dx.doi.org/10.1016/j.proeng.2014.11.312.

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50

Hourdakis, Emmanouel, Anastassios Travlos, and Androula G. Nassiopoulou. "High-Performance MIM Capacitors With Nanomodulated Electrode Surface." IEEE Transactions on Electron Devices 62, no. 5 (May 2015): 1568–73. http://dx.doi.org/10.1109/ted.2015.2411771.

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