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Автор: Grafiati
Опубліковано: 6 вересня 2023

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1

Navrátil, Vladislav, and Tomáš Šikola. "Microhardness of thin molybdenum films." Materials Science and Engineering: A 234-236 (August 1997): 390–92. http://dx.doi.org/10.1016/s0921-5093(97)00158-5.

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2

Gurbanova, U. M., Z. S. Safaraliyeva, N. R. Abishova, R. G. Huseynova, and D. B. Tagiyev. "MATHEMATICAL MODELING THE ELECTROCHEMICAL DEPOSITION PROCESS OF Ni–Mo THIN FILMS." Azerbaijan Chemical Journal, no. 3 (September 28, 2021): 6–11. http://dx.doi.org/10.32737/0005-2531-2021-3-6-11.

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To avoid the numerous experiments for determining optimal conditions and electrolyte composition at co-deposition of two metals we have cleated the regression equation. Mathematical calculations have been carried out using the Optum ME package program with the study of some factors as current density, concentration of main components, temperature, etc. which effect on the co-deposition process. Three independent variables have been selected. The amount of molybdenum in the deposit has been chosen as the dependent variable. The developed regression equation quite adequately describes the co-deposition process of nickel with molybdenum and can be used at planning the works on obtaining alloys with the required composition by the electrochemical method
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3

Uno, Takehiko, and Kota Onuki. "Properties of Molybdenum Trioxide Thin Films." Japanese Journal of Applied Physics 24, S2 (January 1, 1985): 419. http://dx.doi.org/10.7567/jjaps.24s2.419.

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4

Bosworth, D., S. L. Sahonta, R. H. Hadfield, and Z. H. Barber. "Amorphous molybdenum silicon superconducting thin films." AIP Advances 5, no. 8 (August 2015): 087106. http://dx.doi.org/10.1063/1.4928285.

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5

Mattern, N., W. Pitschke, and S. Doyle. "Structure of molybdenum sulphide thin films." Acta Crystallographica Section A Foundations of Crystallography 49, s1 (August 21, 1993): c327—c328. http://dx.doi.org/10.1107/s010876737809087x.

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6

Divigalpitiya, W. M. Ranjith, S. Roy Morrison, and R. F. Frindt. "Thin oriented films of molybdenum disulphide." Thin Solid Films 186, no. 1 (April 1990): 177–92. http://dx.doi.org/10.1016/0040-6090(90)90511-b.

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7

Wang, Zhouling, Wenwu Wang, Ya Yang, Wei Li, Lianghuan Feng, Jingquan Zhang, Lili Wu, and Guanggen Zeng. "The Structure and Stability of Molybdenum Ditelluride Thin Films." International Journal of Photoenergy 2014 (2014): 1–6. http://dx.doi.org/10.1155/2014/956083.

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Анотація:
Molybdenum-tellurium alloy thin films were fabricated by electron beam evaporation and the films were annealed in different conditions in N2ambient. The hexagonal molybdenum ditelluride thin films with well crystallization annealed at 470°C or higher were obtained by solid state reactions. Thermal stability measurements indicate the formation of MoTe2took place at about 350°C, and a subtle weight-loss was in the range between 30°C and 500°C. The evolution of the chemistry for Mo-Te thin films was performed to investigate the growth of the MoTe2thin films free of any secondary phase. And the effect of other postdeposition treatments on the film characteristics was also investigated.
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8

Chen, Shih-Fan, Shea-Jue Wang, Win-Der Lee, Ming-Hong Chen, Chao-Nan Wei, and Huy-Yun Y. Bor. "Preparation and Characterization of Molybdenum Thin Films by Direct-Current Magnetron Sputtering." Atlas Journal of Materials Science 2, no. 1 (June 14, 2017): 54–59. http://dx.doi.org/10.5147/ajms.v2i1.123.

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The back contact electrode with molybdenum (Mo) thin film is crucial to the performance of Cu(In, Ga)Se2 solar cells. In this research, Mo thin films were fabricated by direct current sputtering to attain low-resistivity molybdenum films on soda-lime glass substrates with good adhesion. The films were sputtered onto substrates in 500 nm thickness and nominally held at room temperature with deposition conditions of power and working pressure. Low resistivity (17-25 μΩ∙cm) of bi-layer molybdenum thin films were achieved with combination of top layer films deposited at 300 W with different working pressure, and bottom fixing layer film deposited at 300 W with 2.5 mTorr which adhered well on glass. Films were characterized the electrical properties, structure, residual stress, morphology by using the Hall-effect Measurement, X-ray Diffraction, and Field-Emission Scanning Electron Microscopy, respectively, to optimize the deposition conditions.
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9

Krishnan, Rahul, Michael Riley, Sabrina Lee, and Toh-Ming Lu. "Vertically aligned biaxially textured molybdenum thin films." Journal of Applied Physics 110, no. 6 (September 15, 2011): 064311. http://dx.doi.org/10.1063/1.3638452.

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10

Baskaran, R., A. V. Thanikai Arasu, E. P. Amaladass, L. S. Vaidhyanathan, and D. K. Baisnab. "Superconducting fluctuations in molybdenum nitride thin films." Physica C: Superconductivity and its Applications 545 (February 2018): 5–9. http://dx.doi.org/10.1016/j.physc.2017.11.006.

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11

Herranen, M., A. Delblanc Bauer, J. O. Carlsson, and R. F. Bunshah. "Corrosion properties of thin molybdenum silicide films." Surface and Coatings Technology 96, no. 2-3 (November 1997): 245–54. http://dx.doi.org/10.1016/s0257-8972(97)00124-2.

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12

Mandal, K. C., and A. Mondal. "Chemically deposited semiconducting molybdenum sulfide thin films." Journal of Solid State Chemistry 85, no. 1 (March 1990): 176–79. http://dx.doi.org/10.1016/s0022-4596(05)80075-1.

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13

Obeng, Jacob A., and Glenn L. Schrader. "Reactive sputtering of molybdenum sulfide thin films." Surface and Coatings Technology 68-69 (December 1994): 422–26. http://dx.doi.org/10.1016/0257-8972(94)90196-1.

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14

Harrison, Kale W., Caleb D. Corolewski, Matthew D. McCluskey, Jeffrey Lindemuth, Su Ha, and M. Grant Norton. "Electronic transport in molybdenum dioxide thin films." Journal of Materials Science: Materials in Electronics 26, no. 12 (August 20, 2015): 9717–20. http://dx.doi.org/10.1007/s10854-015-3639-2.

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15

Kettaf, M., A. Conan, A. Bonnet, and J. C. Bernede. "Electrical properties of molybdenum ditelluride thin films." Journal of Physics and Chemistry of Solids 51, no. 4 (January 1990): 333–41. http://dx.doi.org/10.1016/0022-3697(90)90116-w.

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16

Andrulevičius, Mindaugas, Evgenii Artiukh, Gunnar Suchaneck, Sitao Wang, Nikolai A. Sobolev, Gerald Gerlach, Asta Tamulevičienė, Brigita Abakevičienė, and Sigitas Tamulevičius. "Multitarget Reactive Magnetron Sputtering towards the Production of Strontium Molybdate Thin Films." Materials 16, no. 6 (March 8, 2023): 2175. http://dx.doi.org/10.3390/ma16062175.

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Анотація:
X-ray photoelectron spectroscopy was used to study the direct synthesis of strontium and molybdenum oxide thin films deposited by multitarget reactive magnetron sputtering (MT-RMS). Sr and Mo targets with a purity of 99.9% and 99.5%, respectively, were co-sputtered in an argon–oxygen gas mixture. The chamber was provided with an oxygen background flow plus an additional controlled oxygen supply to each of the targets. We demonstrate that variation in the power applied to the Mo target during MT-RMS enables the production of strontium and molybdenum oxide films with variable concentrations of Mo atoms. Both molybdenum and strontium were found in the oxidized state, and no metallic peaks were detected. The deconvoluted high-resolution XPS spectra of molybdenum revealed the presence of several Mo 3d peaks, which indicates molybdenum bonds in a lower valence state. Contrary to the Mo spectra, the high-resolution strontium Sr 3d spectra for the same samples were very similar, and no additional peaks were detected.
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17

Mostako, A. T. T., and Alika Khare. "Molybdenum thin films via pulsed laser deposition technique for first mirror application." Laser and Particle Beams 30, no. 4 (September 25, 2012): 559–67. http://dx.doi.org/10.1017/s0263034612000560.

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AbstractMirror like Molybdenum thin films on SS substrate in vacuum (10−3Pa) and in Helium environment has been achieved by Pulsed Laser Deposition (PLD) Technique. The PLD thin films of Molybdenum have been characterized by using X-ray Diffraction (XRD) pattern, Scanning Electron Microscope (SEM), Atomic Force Microscope (AFM) and Energy Dispersive X-ray (EDX). The specular reflectivity was recorded with Fourier Transform Infra-Red spectrometer and UV-Visible spectrometer. The optical quality of the thin films was tested via interferometric technique. At the optimum deposition parameters, the crystal orientation was in Mo(110) phase. The FIR-UV-Visible reflectivity of the mirror was found to be closed to that of the polished bulk Molybdenum and Stainless Substrate (SS) substrate.
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18

Ahmad, Danial, M. Amer Khan, Arslan Mahmood, Amjad Sohail, and S. S. Ali Gillani. "Structural and optical properties of molybdenum oxide thin films prepared by the dip coating technique." European Physical Journal Applied Physics 93, no. 3 (March 2021): 30301. http://dx.doi.org/10.1051/epjap/2021200366.

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Due to their excellent structural and optical properties of molybdenum oxide thin films are used in various applications such as gas-sensing, solar cells, optoelectronic and medical physics. The present study is related to the synthesis of molybdenum oxide thin films prepared by dip coating technique and the films were characterized by using various techniques such as XRD, SEM and UV-visible spectroscopy. The monoclinic crystal structure and the crystallite size (29.16–52.77 nm) was investigated by X rays diffraction (XRD) analysis. SEM micrograph was used to identify the nano tubes in MoO3 thin film and UV-visible spectroscopy exhibits the maximum absorption in ultra-violet region and band gap decrease (3.17–2.71 eV) with increased the inner transition states in molybdenum thin film. Finally, the results show that the series of molybdenum oxides MoO1 (Sample 1), MoO2 (Sample 2) and MoO3 (sample 3) exhibited interesting structural and optical properties which make them good candidates for photo catalytic activity.
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19

Srinivasarao, K., G. Srinivasarao, K. V. Madhuri, K. Krishna Murthy, and P. K. Mukhopadhyay. "Preparation and Characterization of R.F. Magnetron Sputtered Mo:ZnO Thin Films." Indian Journal of Materials Science 2013 (October 22, 2013): 1–7. http://dx.doi.org/10.1155/2013/684730.

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The ZnO and Mo:ZnO thin films were deposited by radio frequency magnetron sputtering on quartz and intrinsic silicon (100) substrates at a fixed combined partial pressure 1×10−2 mbar of Ar + O2 and substrate temperatures of 473 K and 673 K. The effect of Molybdenum doping on ZnO thin films with different Molybdenum concentrations (1-2 atomic percent) was studied with the help of structural and microstructural characterization techniques. The films deposited at a substrate temperature of 473 K exhibited strong c-axis orientation with predominant (002) peak. At 673 K, along with (002) orientation, other orientations (100), (101), (220), and (103) were also observed. Among these, the (220) peak indicates the cubic phase of ZnO. With increasing Molybdenum concentration, the cubic phase of ZnO disappeared, and the (002) orientation became strong and intense. The composition analysis reveals that the undoped ZnO films deposited at 473 K have oxygen deficiency, and the ratio of Zn/O is improved with increasing Mo atomic percent in ZnO. The surface morphological features reveal that the undoped ZnO films were found to be uniform and have grain size of around 30 nm. The optical energy gap of the undoped ZnO films is 3.05 eV and increases with increasing Mo concentration. The thickness of the films is around 456 nm.
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20

Acosta, Dwight R., Jesús M. Ortega, and Carlos R. Magaña. "Electron and Atomic Force Microscopy of Electrochromic WO3 and Molybdenum Doped WO3 Thin Films Deposited by Pulsed Spray Pyrolysis." Materials Science Forum 644 (March 2010): 129–33. http://dx.doi.org/10.4028/www.scientific.net/msf.644.129.

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WO3/FTO/Glass and WO3:Mo/FTO/Glass thin films were deposited using the pulsed spray pyrolysis technique. The Molybdenum doped thin films were deposited using 2,4,6,8 and 10 % at . concentration in the starting solution. The influence of molybdenum concentration on the structural, electrical, optical and electrochromic properties of WO3:Mo thin films have been systematically studied using Scanning Electron Microscopy (SEM), Selected Area Diffraction Patterns (SAED) in Conventional Transmission Electron Microscopy (CTEM), High Resolution Electron Microscopy (HREM) and Atomic Force Microscopy (AFM). The electrochemical behavior of our materials was studied using cyclic voltammetry both to induce electrochromic behavior and to characterize the electric charge injection and extraction processes. It was found that samples with 2% at. of molybdenum concentration in the starting solution, show the best electrochromic behavior with the highest efficiency and durability. The influence of structural details in our films and their evolution with the molybdenum incorporation, for a fixed substrate temperature on the electrochromic properties of our WO3:Mo thin films has been followed wherever possible.
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21

An, Geng, Jun Sun, Yuan Jun Sun, and Wei Cheng Cao. "Preparation and Influencing Factors of Molybdenum Targets and Magnetron-Sputter-Deposited Molybdenum Thin Films." Materials Science Forum 913 (February 2018): 853–61. http://dx.doi.org/10.4028/www.scientific.net/msf.913.853.

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Aiming to produce qualified molybdenum (Mo) target for sputter deposition, Mo targets were prepared by utilizing powder metallurgy method in this research. The influences of sintering modes, press working modes and total deformation on microstructure and properties of Mo target were studied. Furthermore, magnetron sputtering test was conducted in vacuum environment by using the prepared Mo targets to deposit Mo thin films of which the surface morphologies, electrical conductivities, and crystalline properties were analyzed. The results show that vacuum presintering followed by hydrogen sintering mode can greatly decrease the impurity contents of Mo slabs. It is favorable to obtain the Mo target with fine and uniform grains on size and distribution by using forging mode or forging cogging mode and more than 70% total deformation. With the increase of sputtering currents of Mo target, the grain size and the thickness of the Mo thin films significantly rise, while FWHM of diffraction peaks of grain orientation (110), surface roughness and electrical resistivity of thin films decrease accordingly.
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22

Hikita, Shinya, Teppei Hayashi, Yuuki Sato, and Shinzo Yoshikado. "Resistivity of Thin Films of MoSi2–Si Composites." Key Engineering Materials 485 (July 2011): 265–68. http://dx.doi.org/10.4028/www.scientific.net/kem.485.265.

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Thin films of the composite of molybdenum silicate (MoSi2) and silicon (Si) were fabricated by radio frequency magnetron sputtering using a target made of a powder mixture of MoSi2 and Si. The composite thin film consisted of two types of molybdenum silicate with hexagonal and unknown crystal structures. The temperature dependence of the resistivity of a thin film was measured using the four-probe method. The sign of the temperature coefficient of the resistivity changed from positive to negative with increasing molar ratio of Si to Mo. It was suggested that molybdenum silicate with the hexagonal structure had both positive and negative temperature coefficients of resistivity, whereas the unknown structure showed only a negative temperature coefficient of resistivity.
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23

Hayashi, Teppei, Yuuki Sato, and Shinzo Yoshikado. "Evaluation of the Structures and Oxidation Resistances of MoSi2-Si Composite Thin Films." Key Engineering Materials 445 (July 2010): 148–51. http://dx.doi.org/10.4028/www.scientific.net/kem.445.148.

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Thin films of mixtures of molybdenum silicate (MoSi2) and silicon (Si) (MoSiX, where the Mo to Si molar ratio = 1:X) were deposited on silicon nitride (Si3N4) polycrystalline substrates by radio-frequency magnetron sputtering using a target made of a mixture of MoSi2 and Si powders. The crystal structure of MoSiX thin films deposited on the Si3N4 substrate consisted of a mixture of a hexagonal phase and an unknown phase when X > 2.05. A thin film consisting almost entirely of the unknown phase could be deposited when X = 2.1−2.15. Molybdenum silicate can exist in the forms Mo3Si, Mo5Si3, or MoSi2, but to date there has been no report of molybdenum silicate having a Si to Mo molar composition ratio of larger than 2. It was found that the surfaces of thin films of the hexagonal phase or the unknown phase were readily oxidized, whereas the surfaces of thin films of a mixture of the hexagonal phase and the unknown phase exhibit excellent oxidation resistance in air at temperatures up to 700 °C.
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24

Li, Xifeng, Weina Miao, Qun Zhang, Li Huang, Zhuangjian Zhang, and Zhongyi Hua. "Preparation of Molybdenum-doped Indium Oxide Thin Films Using Reactive Direct-current Magnetron Sputtering." Journal of Materials Research 20, no. 6 (June 1, 2005): 1404–8. http://dx.doi.org/10.1557/jmr.2005.0184.

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High-mobility molybdenum-doped In2O3 films (IMO) were prepared on the normal glass substrate by reactive direct current magnetron sputtering from the molybdenum-embedded indium metal target. The effects of oxygen partial pressure, substrate temperature, and sputtering current on the optoelectrical properties of IMO films were investigated. The films with the highest carrier mobility of 50 cm2 V−1 s−1, as well as the average visible transmission greater than 80% including the 1.2-mm-thick glass substrate, were obtained. The minimum resistivity of the films is 3.7 × 10−4 ohm cm. The properties of the IMO films are sensitive to the oxygen partial pressure in the sputtering environment. X-ray diffraction measurements indicate that the films show In2O3 crystal structure.
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25

Al-Kuhaili, M. F., and M. B. Mekki. "Laser-induced photocoloration in molybdenum oxide thin films." Journal of Alloys and Compounds 885 (December 2021): 161043. http://dx.doi.org/10.1016/j.jallcom.2021.161043.

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26

Guerfi, A., and LÊ H. Dao. "Electrochromic Molybdenum Oxide Thin Films Prepared by Electrodeposition." Journal of The Electrochemical Society 136, no. 8 (August 1, 1989): 2435–36. http://dx.doi.org/10.1149/1.2097408.

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27

Mane, S. R., B. J. Walekar, R. M. Mane, V. V. Kondalkar, V. B. Ghanwat, and P. N. Bhosale. "Molybdenum Heteropolyoxometalate Thin Films for Solar Cell Applications." Procedia Materials Science 6 (2014): 1104–9. http://dx.doi.org/10.1016/j.mspro.2014.07.182.

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28

Guru Prakash, N., M. Dhananjaya, B. Purusottam Reddy, K. Sivajee Ganesh, A. Lakshmi Narayana, and O. M. Hussain. "Molybdenum doped V2O5 Thin Films electrodes for Supercapacitors." Materials Today: Proceedings 3, no. 10 (2016): 4076–81. http://dx.doi.org/10.1016/j.matpr.2016.11.076.

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29

Liu, Zhengyuan, Bingcheng Luo, Junbiao Hu, and Cheng Xing. "Transport mechanism in amorphous molybdenum silicide thin films." Journal of Physics and Chemistry of Solids 149 (February 2021): 109818. http://dx.doi.org/10.1016/j.jpcs.2020.109818.

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30

Bernede, J. C., J. Pouzet, N. Manai, and A. Ben Mouais. "Structural characterization of synthesized molybdenum ditelluride thin films." Materials Research Bulletin 25, no. 1 (January 1990): 31–42. http://dx.doi.org/10.1016/0025-5408(90)90159-y.

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31

Srinivas, G., and V. D. Vankar. "Ellipsometric studies of polycrystalline molybdenum silicide thin films." Materials Research Bulletin 31, no. 11 (November 1996): 1331–40. http://dx.doi.org/10.1016/0025-5408(96)00137-7.

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32

Bernede, J. C., J. Pouzet, and Z. K. Alaoui. "Preparation and characterization of molybdenum diselenide thin films." Applied Physics A Solids and Surfaces 51, no. 2 (August 1990): 155–59. http://dx.doi.org/10.1007/bf00324281.

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33

Jervis, T. R., M. Nastasi, R. Bauer, and P. D. Fleischauer. "Laser surface processing of molybdenum disulfide thin films." Thin Solid Films 181, no. 1-2 (December 1989): 475–83. http://dx.doi.org/10.1016/0040-6090(89)90516-6.

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34

Guerrero, R. Martinez, J. R. Vargas Garcia, V. Santes, and E. Gomez. "Preparation of molybdenum oxide thin films by MOCVD." Journal of Alloys and Compounds 434-435 (May 2007): 701–3. http://dx.doi.org/10.1016/j.jallcom.2006.08.227.

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35

Mutschall, D., K. Holzner, and E. Obermeier. "Sputtered molybdenum oxide thin films for NH3 detection." Sensors and Actuators B: Chemical 36, no. 1-3 (October 1996): 320–24. http://dx.doi.org/10.1016/s0925-4005(97)80089-5.

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36

Srinivas, G., and V. D. Vankar. "Raman spectroscopy of polycrystalline molybdenum silicide thin films." Materials Letters 30, no. 2-3 (February 1997): 209–15. http://dx.doi.org/10.1016/s0167-577x(96)00199-1.

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37

Meng, Yang, Xi-liang Yang, Hua-xian Chen, Jie Shen, Yi-ming Jiang, Zhuang-jian Zhang, and Zhong-yi Hua. "Molybdenum-doped indium oxide transparent conductive thin films." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 20, no. 1 (January 2002): 288–90. http://dx.doi.org/10.1116/1.1421595.

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38

Kotsedi, L., P. Mthunzi, Z. Y. Nuru, S. M. Eaton, P. Sechoghela, N. Mongwaketsi, R. Ramponi, and M. Maaza. "Femtosecond laser surface structuring of molybdenum thin films." Applied Surface Science 353 (October 2015): 1334–41. http://dx.doi.org/10.1016/j.apsusc.2015.08.047.

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39

GORENSTEIN, A. "Lithium insertion in sputtered amorphous molybdenum thin films." Solid State Ionics 86-88 (July 1996): 977–81. http://dx.doi.org/10.1016/0167-2738(96)00237-8.

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40

Patil, P. S., and R. S. Patil. "Studies on spray pyrolyzed molybdenum trioxide thin films." Bulletin of Materials Science 18, no. 7 (November 1995): 911–16. http://dx.doi.org/10.1007/bf02745283.

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41

Al-Kuhaili, M. F., S. M. A. Durrani, and I. A. Bakhtiari. "Pulsed laser deposition of molybdenum oxide thin films." Applied Physics A 98, no. 3 (October 10, 2009): 609–15. http://dx.doi.org/10.1007/s00339-009-5444-3.

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42

Sabhapathi, V. K., O. Md Hussain, P. S. Reddy, K. T. Ramakrishna Reddy, S. Uthanna, B. S. Naidu, and P. Jayarama Reddy. "Optical absorption studies in molybdenum trioxide thin films." Physica Status Solidi (a) 148, no. 1 (March 16, 1995): 167–73. http://dx.doi.org/10.1002/pssa.2211480114.

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43

Bernede, J. C., N. Manai, J. Pouzet, M. Morsli, and A. Ouadah. "Physico-chemical characterization of molybdenum dichalcogenide thin films." Materials Chemistry and Physics 28, no. 4 (August 1991): 347–54. http://dx.doi.org/10.1016/0254-0584(91)90070-b.

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44

Choi, J.-G., D. Choi, and L. T. Thompson. "Preparation of molybdenum nitride thin films by N+ ion implantation." Journal of Materials Research 7, no. 2 (February 1992): 374–78. http://dx.doi.org/10.1557/jmr.1992.0374.

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Анотація:
A series of molybdenum nitride films were synthesized by implanting energetic nitrogen ions into molybdenum thin films. The resulting films were characterized using x-ray diffraction to determine the effects of nitrogen ion dose (4 × 1016−4 × 1017 N+/cm2), accelerating voltage (50–200 kV), and target temperature (∼298–773 K) on their structural properties. The order of structural transformation with increased incorporation of nitrogen ions into the Mo film can be summarized as follows: Mo → γ−Mo2N → δ−MoN. Nitrogen incorporation was increased by either increasing the dose or decreasing the ion energy. At elevated target temperatures the metastable B1–MoN phase was also produced. In most cases the Mo nitride crystallites formed with the planes of highest atomic density parallel to the substrate surface. At high ion energies preferential orientation developed so that the more open crystallographic directions aligned with the ion beam direction. We tentatively attributed this behavior to ion channeling effects.
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45

Martin, T. L., and J. E. Mahan. "Electronic transport and microstructure in MoSi2 thin films." Journal of Materials Research 1, no. 3 (June 1986): 493–502. http://dx.doi.org/10.1557/jmr.1986.0493.

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Molybdenum disilicide thin films having the tetragonal crystal structure were prepared by furnace reaction of ion-beam-sputtered molybdenum layers with silicon substrates. The room temperature intrinsic resistivity is ∼20 μΩ cm. The Hall effect indicates predominantly hole conduction. Geometrical magnetoresistance measurements provide a carrier mobility estimate of 90 cm2 /V.s at room temperature. The Hall mobility is much less than this; the large difference between the two mobility values suggests multiband conduction. An isotropic, degenerate, twoband model may be fitted to the data with a comparatively low majority carrier concentration (holes) of ∼ 1.5 × 1021 cm−3 Regarding the effects of microstructure on transport, the residual resistivity for films formed on 1-0-0 silicon wafers is much greater than for those formed on an (LPCVD) polysilicon layer: 92 vs 29 μΩ cm, respectively. A correlation with average grain size for the two sample types suggests that grain boundary scattering is the principal cause of the residual resistivity. electronic materials; electrical properties; thin film
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46

KHAN, MAJID, MOHAMMAD ISLAM, AFTAB AKRAM, and UMAIR MANZOOR. "PROCESSING–STRUCTURE–PROPERTY CORRELATION IN DC SPUTTERED MOLYBDENUM THIN FILMS." Surface Review and Letters 20, no. 06 (December 2013): 1350065. http://dx.doi.org/10.1142/s0218625x13500650.

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Molybdenum thin films were sputter deposited under different conditions of DC power and chamber pressure. The structure and topography of the films were investigated using AFM, SEM and XRD techniques. Van der Pauw method and tape test were employed to determine electrical resistivity and interfacial strength to the substrate, respectively. All the films are of sub-micron thickness with maximum growth rate of 78 nm/min and crystallite size in the range of 4 to 21 nm. The films produced at high power and low pressure exhibit compressive residual strains, low electrical resistivity and poor adhesion to the glass substrate, whereas the converse is true for films produced at high pressure.
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47

Gurbanova, U. M., R. G. Huseynova, N. R. Abishova, E. F. Ismaylova Orudjeva, M. T. Abbasov, Ya A. Nuriyev, A. Sh Aliyev, and D. B. Tagiyev. "INVESTIGATION OF ELECTROCATALYTIC ACTIVITY OF Ni–Mo THIN FILMS FOR WATER ELECTROLYSIS." Azerbaijan Chemical Journal, no. 4 (December 8, 2022): 27–32. http://dx.doi.org/10.32737/0005-2531-2022-4-27-32.

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The paper presents data on the study of the electrocatalytic properties of Ni–Mo thin films in neutral and alkaline media, obtained as a result of electrochemical synthesis. Comparative characteristics of the electrocatalytic properties of deposited Ni-Mo films on various substrates and different compositions with the catalytic activity of Ni, Pt and St-3 were determined by the method of recording linear polarization curves and determining the slope of the Tafel curves. The highest catalytic activity was exhibited by Ni73.5Mo13.3O13.2 thin films on a nickel substrate that were not annealed. The dependence of the microhardness of the films on their composition was determined, and Ni–Mo films with a Mo content of 38% had the highest microhardness. It has been established that the corrosion resistance of films depends on the content of molybdenum in them, and an increase in its content in alloys increases their corrosion resistance, but the catalytic activity of the films decreases
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48

Xi, Yang, Martha Isabel Serna, Lanxia Cheng, Yang Gao, Mahmoud Baniasadi, Rodolfo Rodriguez-Davila, Jiyoung Kim, Manuel A. Quevedo-Lopez, and Majid Minary-Jolandan. "Fabrication of MoS2 thin film transistors via selective-area solution deposition methods." Journal of Materials Chemistry C 3, no. 16 (2015): 3842–47. http://dx.doi.org/10.1039/c5tc00062a.

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49

Beibei Guo, Beibei Guo, Yaoming Wang Yaoming Wang, Xiaolong Zhu Xiaolong Zhu, Mingsheng Qin Mingsheng Qin, Dongyun Wan Dongyun Wan, and and Fuqiang Huang and Fuqiang Huang. "Molybdenum thin films fabricated by rf and dc sputtering for Cu(In,Ga)Se2 solar cell applications." Chinese Optics Letters 14, no. 4 (2016): 043101–43105. http://dx.doi.org/10.3788/col201614.043101.

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50

Ghosh, S. K., C. Srivastava, S. Nath, and J. P. Celis. "Simple Formation of Nanostructured Molybdenum Disulfide Thin Films by Electrodeposition." International Journal of Electrochemistry 2013 (2013): 1–7. http://dx.doi.org/10.1155/2013/138419.

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Nanostructured molybdenum disulfide thin films were deposited on various substrates by direct current (DC) electrolysis form aqueous electrolyte containing molybdate and sulfide ions. Post deposition annealing at higher temperatures in the range 450–700°C transformed the as-deposited amorphous films to nanocrystalline structure. High temperature X-ray diffraction studies clearly recorded the crystal structure transformations associated with grain growth with increase in annealing temperature. Surface morphology investigations revealed featureless structure in case of as-deposited surface; upon annealing it converts into a surface with protruding nanotubes, nanorods, or dumbbell shape nanofeatures. UV-visible and FTIR spectra confirmed about the presence of Mo-S bonding in the deposited films. Transmission electron microscopic examination showed that the annealed MoS2films consist of nanoballs, nanoribbons, and multiple wall nanotubes.
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