Дисертації з теми "Molybdenum Thin Films"
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Rickman, Sarah. "Growth and characterization of molybdenum disulfide, molybdenum diselenide, and molybdenum(sulfide, selenide) formed between molybdenum and copper indium(sulfide, selenide) during growth." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file 0.94 Mb., 85 p, 2006. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&res_dat=xri:pqdiss&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&rft_dat=xri:pqdiss:1435848.
Повний текст джерелаKaye, Simon Peter. "Ion-assisted deposition of molybdenum disulphide films." Thesis, University of Salford, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.238835.
Повний текст джерелаWang, Yimin. "Reactive Sputter Deposition of Molybdenum Nitride Thin Films." University of Cincinnati / OhioLINK, 2002. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1025108562.
Повний текст джерелаGross, Carl Morris III. "Growth and Characterization of Molybdenum Disulfide Thin Films." Wright State University / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=wright1464363549.
Повний текст джерелаCormier, Pierre Richard Sébastien. "Secondary electron emission properties of molybdenum disulfide thin films." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp04/mq31189.pdf.
Повний текст джерелаGuimond, Sebastien. "Vanadium and molybdenum oxide thin films on Au(111)." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2009. http://dx.doi.org/10.18452/15999.
Повний текст джерелаThe growth and the surface structure of well-ordered V2O3, V2O5 and MoO3 thin films have been investigated in this work. These films are seen as model systems for the study of ele-mentary reaction steps occurring on vanadia and molybdena-based selective oxidation cata-lysts. It is shown that well-ordered V2O3(0001) thin films can be prepared on Au(111). The films are terminated by vanadyl groups which are not part of the V2O3 bulk structure. Elec-tron irradiation specifically removes the oxygen atoms of the vanadyl groups, resulting in a V-terminated surface. The fraction of removed vanadyl groups is controlled by the electron dose. Such surfaces constitute interesting models to probe the relative role of both the vanadyl groups and the undercoordinated V ions at the surface of vanadia catalysts. The growth of well-ordered V2O5(001) and MoO3(010) thin films containing few point defects is reported here for the first time. These films were grown on Au(111) by oxidation under 50 mbar O2 in a dedicated high pressure cell. Contrary to some of the results found in the literature, the films are not easily reduced by annealing in UHV. This evidences the contribution of radiation and surface contamination in some of the reported thermal reduction experiments. The growth of ultrathin V2O5 and MoO3 layers on Au(111) results in formation of interface-specific monolayer structures. These layers are coincidence lattices and they do not correspond to any known oxide bulk structure. They are assumed to be stabilized by electronic interaction with Au(111). Their formation illustrates the polymorphic character and the ease of coordination units rearrangement which are characteristic of both oxides. The formation of a second layer apparently precedes the growth of bulk-like crystallites for both oxides. This observation is at odds with a common assumption that crystals nucleate as soon as a monolayer is formed dur-ing the preparation of supported vanadia catalysts.
Tashiro, Hidenori. "Time-resolved infrared studies of superconducting molybdenum-germanium thin films." [Gainesville, Fla.] : University of Florida, 2004. http://purl.fcla.edu/fcla/etd/UFE0008001.
Повний текст джерелаBragg, Donald. "Photocatalytic Oxidation of Carbon Monoxide Using Sputter Deposited Molybdenum Oxide Thin Films on a Silicon Dioxide Substrate." Fogler Library, University of Maine, 2007. http://www.library.umaine.edu/theses/pdf/BraggD2007.pdf.
Повний текст джерелаGolub, A. S., N. D. Lenenko, E. P. Krinichnaya, O. P. Ivanova, I. V. Klimenko, and T. S. Zhuravleva. "Nanostructured Films of Semiconducting Molybdenum Disulfide Obtained Through Exfoliation-Restacking Method." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35055.
Повний текст джерелаAshraf, Sobia. "Aerosol assisted chemical vapour deposition of tungsten and molybdenum oxide thin films." Thesis, University College London (University of London), 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.498322.
Повний текст джерелаMakous, John Lawrence. "Superconductivity in molybdenum/tantalum superlattices and yttrium-barium-copper-oxide thin films." Diss., The University of Arizona, 1989. http://hdl.handle.net/10150/184662.
Повний текст джерелаShapiro, Arye. "Growth, structure, and electronic properties of molybdenum/silicon thin films by Molecular beam epitaxy (MBE)." Diss., The University of Arizona, 1989. http://hdl.handle.net/10150/184846.
Повний текст джерелаTrainer, Daniel Joseph. "INVESTIGATION OF THE QUASIPARTICLE BAND GAP TUNABILITY OF ATOMICALLY THIN MOLYBDENUM DISULFIDE FILMS." Diss., Temple University Libraries, 2019. http://cdm16002.contentdm.oclc.org/cdm/ref/collection/p245801coll10/id/559773.
Повний текст джерелаPh.D.
Two dimensional (2D) materials, including graphene, hexagonal boron nitride and layered transition metal dichalcogenides (TMDs), have been a revolution in condensed matter physics and they are at the forefront of recent scientific research. They are being explored for their unusual electronic, optical and magnetic properties with special interest in their potential uses for sensing, information processing and memory. Molybdenum disulfide (MoS2) has been the flagship semiconducting TMD over the past ten years due to its unique electronic, optical and mechanical properties. In this thesis, we grow mono- to few layer MoS2 films using ambient pressure chemical vapor depositions (AP-CVD) to obtain high quality samples. We employ low temperature scanning tunneling microscopy and spectroscopy (LT-STM/STS) to study the effect of layer number on the electronic density of states (DOS) of MoS¬2. We find a reduction of the magnitude of the quasiparticle band gap from one to two monolayers (MLs) thick. This reduction is found to be due mainly to a shift of the valence band maxima (VBM) where the conduction band minimum (CBM) does not change dramatically. Density functional theory (DFT) modeling of this system shows that the overlap of the interfacial S-pz orbitals is responsible for shifting the valence band edge at the Γ-point toward the Fermi level (EF), reducing the magnitude of the band gap. Additionally, we show that the crystallographic orientation of monolayer MoS2 with respect to the HOPG substrate can also affect the electronic DOS. This is demonstrated with five different monolayer regions having each with a unique relative crystallographic orientation to the underlying substrate. We find that the quasiparticle band gap is closely related to the moiré pattern periodicity, specifically the larger the moiré periodicity the larger the band gap. Using DFT, we find that artificially increasing the interaction between the film and the substrate means that the magnitude of the band gap reduces. This indicates that the moiré pattern period acts like a barometer for interlayer coupling. We investigate the effect of defects, both point and extended defects, on the electronic properties of mono- to few layer MoS¬2 films. Atomic point defects such including Mo interstitials, S vacancies and O substitutions are identified by STM topography. Two adjacent defects were investigated spectroscopically and found to greatly reduce the quasiparticle band gap and arguments were made to suggest that they are Mo-Sx complex vacancies. Similarly, grain boundaries were found to reduce the band gap to approximately ¼ of the gap found on the pristine film. We use Kelvin probe force microscopy (KPFM) to investigate the affect of annealing the films in UHV. The work function measurements show metastable states are created after the annealing that relax over time to equilibrium values of the work function. Scanning transmission electron microscopy (STEM) is used to show that S vacancies can recombine over time offering a feasible mechanism for the work function changes observed in KPFM. Lastly, we report how strain affects the quasiparticle band gap of monolayer MoS2 by bending the substrate using a custom built STM sample holder. We find that the local, atomic-scale strain can be determined by a careful calibration procedure and a modified, real-space Lawler Fujita algorithm. We find that the band gap of MoS2 reduces with strain at a rate of approximately 400 meV/% up to a maximum strain of 3.1%, after which the film can slip with respect to the substrate. We find evidence of this slipping as nanoscale ripples and wrinkling whose local strain fields alter the local electronic DOS.
Temple University--Theses
Giang, Hannah. "Rational Fabrication of Molybdenum Disulfide and Metal-doped Molybdenum Disulfide Thin Films via Electrodeposition Method for Energy Storage, Catalysis, and Biosensor Applications." OpenSIUC, 2020. https://opensiuc.lib.siu.edu/dissertations/1861.
Повний текст джерелаForsberg, Viviane. "Liquid Exfoliation of Molybdenum Disulfide for Inkjet Printing." Licentiate thesis, Mittuniversitetet, Avdelningen för naturvetenskap, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-29181.
Повний текст джерелаSedan upptäckten av grafen har mycket arbete lagts på framställning och produktion av 2D-material. En viktig uppgift har varit att ta fram skalbara metoder för produktion av högkvalitativa nanosheets via exfoliering. Den mest lovande skalbarametoden hittills har varit vätskebaserad exfoliering av nanosheets i lösningsmedel. Tunna filmer av nanosheets i dispersion kan anpassas med hjälp av tillsatser och användas för tillverkning av halvledare strukturer med inkjet-skrivare, vilket är den mest lovande metoden för på en industriell produktions nivå beläggaden typen av material på substrat. Även om det finns välutvecklade metalliska och organiskabläck för tryckt elektronik, så finns det fortfarande ett behov av att förbättra eller utveckla nya bläck baserade på halvledarmaterial som t.ex. TMD, som är stabila, har goda bestryknings egenskaper och ger bra tryckkvalitet. Den inerta naturen tillsammans med de mekaniska egenskaperna som finns hosskiktade material, som t.ex. molybdendisulfid (MoS2), gör demlämpliga för flexibel elektronik och bearbetning i lösning. Dessutom gör den höga elektronmobiliteten i dessa 2D-halvledaredem till en stark kandidat som halvledarmaterial inom trycktelektronik. Det betyder att MoS2 är ett enkelt och robust material med goda halvledaregenskaper som är lämpligt för bestrykning från lösning och tryck, och är miljömässigt säker.Den metod som beskrivs här kan med fördel användas föratt exfoliera alla typer av 2D-material i lösning. Exfolieringensker i två steg; först mekanisk exfoliering av torr bulk med sandpapper, därefter används ultraljudsbehandling i lösning för att exfoliera nanosheets. De dispersioner som framställts i lösning med surfaktanter dekanterades och det övre skiktetanvändes i trycktester med en Dimatix inkjet-skrivare.Tryckprovet visar att det är möjligt att använda MoS2 -dispersion som ett inkjet-bläck och att optimering för särskildaskrivar- och substratkombinationer borde göras, såsom förbättringav bläcksammansättningen med avseende på droppbildning och break-off vid skrivarmunstycket, vilket i sin tur skulleförbättra tryckkvaliteten.
KM2
Paper Solar Cells
Rouse, Ambrosio A. 1960. "Characterization and Field Emission Properties of Mo2C and Diamond Thin Films Deposited on Mo Foils and Tips by Electrophoresis." Thesis, University of North Texas, 1999. https://digital.library.unt.edu/ark:/67531/metadc278393/.
Повний текст джерелаJayabal, Matheshkumar. "Molybdenum as a back contact for cucl treated cds/cdte solar cells." Scholar Commons, 2005. http://scholarcommons.usf.edu/etd/2937.
Повний текст джерелаNowrozi, Mojtaba Faiz. "A systematic study of LPCVD refractory metal/silicide interconnect materials for very large scale integrated circuits." Diss., The University of Arizona, 1988. http://hdl.handle.net/10150/184396.
Повний текст джерелаWang, Chao-Hsiung. "The growth of thin film epitaxial oxide-metal heterostructures." Thesis, University of Cambridge, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.368667.
Повний текст джерелаLim, Seong-Chu. "Scanning Tunneling Microscopy of Epitaxial Diamond (110) and (111) Films and Field Emission Properties of Diamond Coated Molybdenum Microtips." Thesis, University of North Texas, 1998. https://digital.library.unt.edu/ark:/67531/metadc279160/.
Повний текст джерелаTakahashi, Eigo. "Correlation between preparation parameters and properties of molybdenum back contact layer for CIGS thin film solar cells." Master's thesis, University of Central Florida, 2010. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4554.
Повний текст джерелаID: 028916841; System requirements: World Wide Web browser and PDF reader.; Mode of access: World Wide Web.; Thesis (M.S.M.S.E.)--University of Central Florida, 2010.; Includes bibliographical references (p. 97-111).
M.S.M.S.E.
Masters
Department of Mechanical, Materials and Aerospace Engineering
Engineering and Computer Science
Materials Science and Engineering
Jurgens-Kowal, Teresa Ann. "Preparation and characterization of synthetic mineral surfaces : adsorption and thermal decomposition of tetraethoxysilane on magnesium oxide, molybdenum, and titanium dioxide surfaces /." Thesis, Connect to this title online; UW restricted, 1996. http://hdl.handle.net/1773/9865.
Повний текст джерелаKhatri, Himal. "New Deposition Process of Cu(In,Ga)Se2 Thin Films for Solar Cell Applications." Connect to full text in OhioLINK ETD Center, 2009. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=toledo1259612259.
Повний текст джерелаPereira, Audrei Conti. "Eletrodos modificados com óxidos de molibdênio: caracterização e estudos eletroquímicos sobre o processo de oxidação anódica do NO." Universidade de São Paulo, 2004. http://www.teses.usp.br/teses/disponiveis/46/46133/tde-25092014-163727/.
Повний текст джерелаThe electrodeposition of molybdenum oxides films onto glassy carbon surfaces in several media was studied. Results showed a dependence of the thickness of the film on the Mo(VI) concentration. They also confirmed the existence of some specific pH conditions where the deposition occurred at higher extension. These modified electrodes have presented different behaviors in the electroreduction of iodate, probably due to the distinct film composition. Rutherford Backscattering Spectrometry analysis of these materiais has shown different ratios between the amount of Mo and O atoms, confirming this assumption. The electroreduction of [Fe(CN6)]-3 at the modified electrode was investigated aiming to evaluate the influence of the film porosity on the voltammetric profile of the electroative species. Data indicated that the cathodic process occurs at the glassy carbon surface by the penetration of [Fe(CN)6]-3 ions through channels in the film. Experiments with nitric oxide (NO) were carried out at a sealed electrochemical cell, which was homemade by using acrylic. The voltammetric signal of NO at a bare platinum electrode consisted of two waves, which were associated to the consecutive formation of nitrite and nitrate. The NO electrochemical behavior was also studied at modified electrodes and a current enhancement was verified by using films produced from solutions containing 1mmolL-1 of the Mo(VI), at pH 2.5.
Ahmed, Omer. "Tribological and Mechanical properties of Multilayered Coatings." University of Toledo / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1501763970144729.
Повний текст джерелаMittapalli, Tharun. "THIN FILM ELECTRO DEPOSITION OF MOLYBDENUM DISULFIDE FOR ENERGY STORAGE." OpenSIUC, 2015. https://opensiuc.lib.siu.edu/theses/1816.
Повний текст джерелаKadam, Ankur. "PREPARATION OF EFFICIENT CUIN1-XGAXSE2-YSY/CDS THIN-FILM SOLAR CELLS BY OPTIMIZING THE MOLYBDENUM BACK CONTACT AND USING DIETHYL." Doctoral diss., University of Central Florida, 2006. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4230.
Повний текст джерелаPh.D.
Department of Mechanical, Materials and Aerospace Engineering;
Engineering and Computer Science
Materials Science and Engineering
Domanski, Daniel Feliks Raphael. "The electrodeposition of metallic molybdenum thin-film coatings, from aqueous electrolytes containing molybdate ions." Thesis, University of British Columbia, 2015. http://hdl.handle.net/2429/55131.
Повний текст джерелаApplied Science, Faculty of
Materials Engineering, Department of
Graduate
Li, Bohao. "Room Temperature Processed Molybdenum Oxide Thin Film as a Hole Extraction Layer for Polymer Photovoltaic Cells." University of Akron / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=akron1368015443.
Повний текст джерелаZhang, Panpan, Sheng Yang, Roberto Pineda-Gómez, Bergoi Ibarlucea, Ji Ma, Martin R. Lohe, Teuku Fawzul Akbar, Larysa Baraban, Gianaurelio Cuniberti, and Xinliang Feng. "Electrochemically Exfoliated High-Quality 2H-MoS₂ for Multiflake Thin Film Flexible Biosensors." Wiley-VCH, 2019. https://tud.qucosa.de/id/qucosa%3A73171.
Повний текст джерелаHogan, Royston Hugh. "Scanning tunneling microscopy and photoelectron spectroscopy of thin film dichromium tetraacetate and dimolybdenum tetraacetate on single crystal graphite and molybdenum disulphide." Diss., The University of Arizona, 1990. http://hdl.handle.net/10150/184992.
Повний текст джерелаCano, Garcia Jose. "Damp Heat Degradation of CIGS Solar Modules." Thesis, Högskolan Dalarna, Energiteknik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:du-26006.
Повний текст джерелаMurphy, Neil Richard. "Reactive sputtering of mixed-valent oxides: a route to tailorable optical absorption." University of Dayton / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1427889137.
Повний текст джерелаBoujida, Mohamed. "Contribution à l'étude des propriétés de transport de quelques oxydes métalliques et supraconducteurs de basse dimensionnalité." Grenoble 1, 1988. http://www.theses.fr/1988GRE10157.
Повний текст джерелаLenoble, Marie-Anne. "Dépot électrolytique de CoFeCu, matériau magnétique doux de forte induction pour tetes magnétiques." Grenoble INPG, 1995. http://www.theses.fr/1995INPG0156.
Повний текст джерелаXIE, MING-XUN, and 謝銘勳. "Interfacial reactions of molybdenum thin films on silcon." Thesis, 1991. http://ndltd.ncl.edu.tw/handle/42920464917601212287.
Повний текст джерелаChan, Yu-Hao, and 詹祐豪. "Chemical Vapor Deposition of Molybdenum Disulfide Thin Films." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/81968044488168669879.
Повний текст джерела國立臺灣大學
材料科學與工程學研究所
104
Molybdenum disulfide (MoS2) is a two-dimensional hexagonal lattice. In contrast to graphene, which has no bandgap by nature, MoS2 monolayer has a direct bandgap of 1.8 eV due to the quantum confinement effect. It exhibits a high on/off current ratio and strong luminescence. Therefore, MoS2 monolayers have attracted much attention in experimental and theoretical researches for its potential applications in optoelectronic devices, field effect transistors, low power switches, valleytronics, etc. For practical applications, it is of importance to develop a reliable growth process to synthesize large-area, uniform, and continuous MoS2 monolayers. Here we use the chemical vapor deposition method for the growth of MoS2 atomic layers, using the precursors, MoO3 and sulfur and high-purity argon carrier gas, onto the silicon oxide substrates. In this study, we investigate the influences of growth temperature, pressure, substrate positions and the substrate orientation on the morphology and thickness of the MoS¬2 thin films and infer the mechanism of MoS2 growth in our system from the experimental results. Continuous MoS2 bilayers in a size of 3.5×2.2 cm2 can be obtained. They exhibit an on/off ratio of 104, mobility of ~10 cm2/V-s, and high luminescence, which is ~13 times stronger than that of the exfoliated MoS2 monolayers.
Srinivas, G. "Structural, optical and electrical properties of molybdenum silicide thin films." Thesis, 1993. http://localhost:8080/xmlui/handle/12345678/3103.
Повний текст джерелаPradhan, Diana. "Rapid Thermal Synthesis of Molybdenum Disulfide Thin Films for Infrared Detectors." Thesis, 2021. http://ethesis.nitrkl.ac.in/10336/1/2021_PhD_DPradhan_516PH1012_Rapid.pdf.
Повний текст джерелаYang, Shih-Yih, and 楊士逸. "Chemical Vapor Deposition of Thin Films from Bisimido Molybdenum Complex and Alane Complex." Thesis, 1994. http://ndltd.ncl.edu.tw/handle/13846862653662059087.
Повний текст джерела國立交通大學
應用化學系
82
The imido complex Mo(NtBu)2(NEt2)2 and alaneound AlH3(NMe2Et)n (n=1 or2) were successfully synthesized. Mo(NtBu)2(NEt2)2 was prepared by the reaction of Mo(NtBu)2Cl2DME with LiNEt2. AlH3( NMe2Et)n (n=1 or2) wasthesized by reacting LiAlH4 with 1eq. of Me2EtN.HCl andMo(NtBu)2(NEt2)2 and AlH3(NMe2Et)n (n=1 or2) were used as precusor to depo-sit thin films on silicon substrates in a cold-wall CVD reactor at 0.03-0.1 Torr,723-923K and 363-503K,respectively. The thin films were characterized by SEM, XRD,WDS and ESCA. For this films deposited from Mo(NtBu)2( NEt2)2, SEM and XRD indicated that the films were poly- crystalline. WDS studies show that the conctitution of the films were MoCxNyOz, x=0.06-0.63, y=0.49-0.76, z=0.02-0.34, with increasing deposition temperature, the carbon and nitrogen centration decreased. XRD studies found that when the temperature deposition has increased, the films show sharp and shift diffraction peaks. Compare with the WDS data, with increasing N/Mo, C/Mo ratio,the lattice parameter increased. Volatile products were analyzed by RGA. From the analysis, decomposition of the tBuN and Et2N groups by β-hydrogen elimination and methyl elimination pathways are proposed. For Al thin films deposited from AlH3(NMe2Et)n (n=1 or2), SEM indicated that they were grown selectively on Si, TiN and TiSi2 in the presence of SiO2. The average grain size for Al on Si is approximately 500A, ten times smaller than found on TiN(5000 A), indicating that Al nuclei are much easily formed on TiN than SiO2. Conformal deposition can be easily achieved for filling unity aspect ratio holes. XRD studies found very sharp diffraction peaks. The resistivity for Al films are 3.1 uohm- cm, which is 10-20% higher than the 2.7 uohm-cm bulk resistivity. We also explore the films deposited from Mo( NtBu)2(NEt2)2 which covered Al thin films deposited from AlH3( NMe2Et)n (n=1or2) as diffusion barrier.
Liu, Hong-Shan, and 劉轟山. "Characterization of Gallium Nitride Thin Films Grown on Chemical-Vapor-Deposited Molybdenum Disulfide." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/63m75f.
Повний текст джерела國立東華大學
材料科學與工程學系
107
In this study, we used chemical vapor deposition (CVD) to grow a large area MoS2 on 2-inch sapphire as substrate, and then GaN thin film were grown on MoS2/sapphire by plasma-assisted molecular beam epitaxy (PA-MBE). We try to investigate effects of deposition parameters on the properties of GaN films, in order to have a large area and high quality GaN/MoS2 heterostructure thin film. To understand the influence of different pre-nitrogen temperature, different growth time, different Ga-temperature (nitrogen first) and different Ga-temperature (gallium first). During the growth, the Reflection High Energy Electron Diffraction (RHEED) can help us to monitor the surface condition of samples. Field Emission Scanning Electron Microscope (FE-SEM), Raman spectroscope, Photoluminescence spectroscope (PL) and High Resolution X-ray Diffraction (HRXRD) were applied to analyze the morphology, structure and quality of GaN thin films. In summary, we deposited GaN thin film on CVD MoS2/sapphire substrate successfully. In consequence, lower pre-nitrogen temperature can protect the MoS2 two-dimension structure more effectively, extend the time of growth and increase the temperature of gallium cell will enhance optical properties and make the grain morphology become hexagonal crystal. But the result of gallium first is worse than nitrogen first.
Tsao, Chin-Wei, and 曹晉瑋. "Growth and Microstructure Analysis of Molybdenum Disulfide Thin Films by Chemical Vapor Deposition." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/xzr84g.
Повний текст джерела國立臺灣大學
材料科學與工程學研究所
107
Molybdenum disulfide is one of the 2D materials which has been widely studied. Similar to graphene, its lattice is hexagonal. The most interesting property of molybdenum disulfide is when the layer thickness is reduced from bulk to single layer, its bandgap will change from an indirect bandgap of 1.0 eV to a direct bandgap of 1.8 eV. This makes single layer of molybdenum disulfide expected to be a material for various electronic or optical devices. There are many methods to get single layer molybdenum disulfide, especially chemical vapor deposition(CVD) is an extensive method to synthesize large-area single layer molybdenum disulfide. In our experiments, we tuned parameters such as growth temperature, carrier gas flow, placement of substrate, addition of sodium chloride to investigate and analyze influences. In order to measure property of single grain molybdenum disulfide, we adjusted parameters to increase grain size from 200 nanometers to 30 microns. It was found that there are many tiny second layers of molybdenum disulfide grains on the first layer grains grown at high temperatures. We assume that this results in many active sites for hydrogen evolution reaction in the unit area of the grain, which makes hydrogen evolution reaction (HER) efficiency better than perfect single-layer molybdenum disulfide grain.
Liao, Hung-Pin, and 廖宏彬. "Study on Optoelectrical Properties and Surface Texturing of Molybdenum Doped Zinc Oxide Thin Films." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/14344555213701219216.
Повний текст джерела南台科技大學
光電工程系
96
Zinc oxide (ZnO) thin films with a strong c-axis preferred orientation, obvious piezoelectric and piezo-optical effects, have been used in acoustoelectric and acousto-optical devices. Besides, the surface textured or “cratered” morphology of ZnO films have a potential application in enhanced light trapping in optical devices such as solar cells. The conduction characteristics of ZnO film with typical resistivity of 1-100 Ω-cm. These primarily dominated by electrons due to the oxygen vacancies and Zn interstitial atoms. In order to improve electric conductivity of the ZnO n-type semiconductor, the proper metal of choosing to enhanced carrier concentration is a feasible and effective method. In this research, we prepared Mo doped ZnO thin films on glass a substrate using co-sputtering to improve the conductivity of ZnO. The incorporated concentration of Mo atoms in ZnO was controlled by adjusting the aperture size of a shutter palaced in front of the Mo target. Textured morphology of ZnO film could be formed by attaching a metallic mask on the substrate. The optoelectric properties and structure of Mo doped ZnO films dependent on process conditions are investigated. Results show that ZnO film doped with 1.84wt% Mo exhibits the highest concentration and conductivity and the lowest surface roughness. A resistivity of 7.52×10-3Ω-cm can be achieved after an annealing process of the MZO film. This is due to that the crystalline intensity and grain size of MZO film were increased after annealing, leading to reduced lattice scattering and impurity scattering effects. The optical transmittance of the MZO film were also improved by 1~2 %. Surface textures with a thickness of 100nm a diameter of 70μm were formed by attaching a metallic shadow mask to the subst rate. The surface textures could adjust optical path of an in coming light resulting in an optical transmittances reduction of 5%. This indicates the surface textured MZO films could enhance light diffusion efficiency. We also observed that the optical transmittance of MZO films decreases as the incident angle of light increases. Increase of thickness would enhance this angle effect to the optical transmittance. So that at high angle of incident the light diffusion refractive effect is more prominent.
"Synthesis and characterization of diamond-like carbon and DLC-MoS2 composite thin films." Thesis, 2014. http://hdl.handle.net/10388/ETD-2014-12-1877.
Повний текст джерелаCHANG and WEN-HSIN. "Development of In-atmosphere Fabrication Methods for Crystalline Molybdenum Trioxide Thin Films and Their Characterizations." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/30587410869974276209.
Повний текст джерела國立中央大學
能源工程研究所
105
This study aims at developing in-atmosphere methods for fabricating molybdenum trioxide (MoO3) thin films. The microstructures of the crystallized thin films by different heat treatment schemes were examined and the effects of various heat treatment approaches on crystallization mechanisms were studied. The fabricated molybdenum trioxide films were finally used as the hole injection layer (HIL) for an hole only device (HOD) to verify their effects on hole injection gain. The effects of film thickness and crystallinity on the characteristics of the device were investigated. In this study, we also propose to prepare the solution through incorporating AHM with nitric acid (HNO3) as the precursor solution. In result, we successfully fabricate h-MoO3 crystalline thin films by the spin coating scheme. In the first part of this study, the precursor solution was deposited on an ITO substrate by the spin-coating technique. The samples were heat treated on a hot plate by different heat treatment conditions. To confirm that h-MoO3 thin film was successfully fabricated, the samples were then characterized by various analyses, including elementary, morphology analysis, crystalline and optical properties. The overall transmittance for MoO3 thin films on ITO ranges from 77 to 82% at the visible light spectrum (300 to 800 nm). When used in HOD, the degree of crystallinity of MoO3 thin film can be enhanced with the increase of film thickness that, compared with the conventional hole injection layer by PEDOT:PSS, shows favorable device performance. The second part of this thesis focuses on an alternative tool of heat treatment, CO2 laser. Since the wavelength of CO2 laser light is far infrared that provides excellent thermal effect on material processing. It is expected the crystalline of MoO3 thin films can be efficiently improved. Depending on laser powers and stage scan speeds, we observed, based on SEM images, MoO3 thin films were with various microstructures, such as needle-like, flake-like and block-like. We examine their properties and discuss their formation mechanisms.
Weber, Frank John. "Changes in structure and stress in Mo/a-Si thin films upon annealing." Thesis, 1995. http://hdl.handle.net/1957/34701.
Повний текст джерелаGraduation date: 1996
Rao, L. LRajeswara. "Design, Fabrication and Characterization of Metal Oxide Semiconductor Based MEMS Gas Sensors for Carbon Monoxide Detection." Thesis, 2017. https://etd.iisc.ac.in/handle/2005/4788.
Повний текст джерелаGuimond, Sebastien [Verfasser]. "Vanadium and molybdenum oxide thin films on Au(111): growth and surface characterization / von Sebastien Guimond." 2009. http://d-nb.info/999461737/34.
Повний текст джерелаTsai, Tsung-Hsien, and 蔡宗憲. "A Study on Deposition of Flexible Electrochromic Tungsten-Molybdenum Oxides Thin Films by Atmospheric Pressure Plasmas." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/98864246214731016395.
Повний текст джерела逢甲大學
化學工程學所
98
Electrochromic material is expanding quickly in recent years as a result of the global energy shortage. Electrochromic devices(ECDs) contain low drive voltage, shorter response time, and the devices exhibit an open-circuit memory. They can independently control indoor lighting and shade, and usually have application to energy-conserving windows, effectively reaching the goal of saving energy for indoor air conditioning and illumination use. In accordance with market trends, the flexible electrochromic device is more obvious day by day, because of its advantages of the lightweight, flexibility and mass production (can use reels of roll to roll production), and they hold broad-spectrum potential for future development. This study uses the atmospheric pressure plasma polymerization method to utilize monomer W(CO)6 and Mo(CO)6 preparation of flexible electrochromic film for tungsten-molybdenum oxide deposited on PET/ITO (Polyethyleneterephthate/Indium Tin Oxide) plastic substrate. Because the advantages of this process are fast and low cost, vacuum equipment and vacuum chambers are not required. Therefore without the need of vacuum chambers, there are no limitations to the size of the substrate dictated by vacuum chambers. This increases the fast thin film coating speed. So this conforms to the industrial requirements to be able to meet mass production conditions. The advantages of tungsten oxide and molybdenum oxide are its good contrast of transmittance, its optical properties, its stability, and its promotion of the electrochromic properties of tungsten oxide and molybdenum oxide by mixing the aforementioned two monomers. This study discusses the preparation of flexible electrochromic devices, PET/ITO/WxMo1-xO3, produced by the atmospheric pressure plasma, and probes into the electrochemical properties, optical properties and electrochromic properties by utilizing three methods: the cyclic-voltamogram method, the step method and the UV-VIS spectroscopy method. A Field Emission Scanning Electron Microscope was used to analyze the film thickness and its surface morphology. Moreover, Electron Spectroscopy for Chemical Analysis was applied to the analysis of the chemical configuration in the WxMo1-xO3 thin film. The results of this study prove the successful coating of a fine electrochromic property of tungsten-molybdenum oxide thin film on the PET/ITO plastic substrate by the atmospheric pressure plasma process. The transmittance change can reach to 76% under a wavelength of 550nm, and after 200 cycles of testing by the cyclic-voltamogram method, the WxMo1-xO3 thin film still had good stability.
Yoder, Karl Bruce. "Deformation and strengthening mechanisms in PVD molybdenum thin films based on an activation analysis of nanoindentation hardness data." 1997. http://catalog.hathitrust.org/api/volumes/oclc/38427210.html.
Повний текст джерела