Добірка наукової літератури з теми "Molybdenum Ditelluride"
Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями
Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "Molybdenum Ditelluride".
Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.
Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.
Статті в журналах з теми "Molybdenum Ditelluride"
Bernède, J. C., M. Kettaf, A. Khelil, and M. Spiesser. "p-n junctions in molybdenum ditelluride." Physica Status Solidi (a) 157, no. 1 (September 16, 1996): 205–9. http://dx.doi.org/10.1002/pssa.2211570126.
Повний текст джерелаWu, Man, and Ying Li. "Passively Q-Switched Erbium-Doped Fiber Laser via Evanescent Field Interaction with Few-Layer Molybdenum Ditelluride." Advances in Condensed Matter Physics 2018 (October 1, 2018): 1–5. http://dx.doi.org/10.1155/2018/9239371.
Повний текст джерелаCastro Arata R. A., Khachaturov S. E., Kononov A. A., and Anisimova. N. I. "Study of relaxers distribution in thin layers of amorphous MoTe-=SUB=-2-=/SUB=-." Physics of the Solid State 63, no. 13 (2022): 1717. http://dx.doi.org/10.21883/pss.2022.13.52311.165.
Повний текст джерелаAnand, T. Joseph Sahaya, and Nor Hamizah Mazlan. "Electro Synthesized MoTe2 Thin Films and their Semiconductor Studies towards Photoelectrochemical Cell." Advanced Materials Research 845 (December 2013): 392–97. http://dx.doi.org/10.4028/www.scientific.net/amr.845.392.
Повний текст джерелаOnofrio, Nicolas, David Guzman, and Alejandro Strachan. "The dynamics of copper intercalated molybdenum ditelluride." Journal of Chemical Physics 145, no. 19 (November 21, 2016): 194702. http://dx.doi.org/10.1063/1.4967808.
Повний текст джерелаWatanabe, Tsuneo, and Akinari Kasai. "Hall Mobility in n-Type Molybdenum Ditelluride." Journal of the Physical Society of Japan 54, no. 7 (July 15, 1985): 2666–70. http://dx.doi.org/10.1143/jpsj.54.2666.
Повний текст джерелаKettaf, M., A. Conan, A. Bonnet, and J. C. Bernede. "Electrical properties of molybdenum ditelluride thin films." Journal of Physics and Chemistry of Solids 51, no. 4 (January 1990): 333–41. http://dx.doi.org/10.1016/0022-3697(90)90116-w.
Повний текст джерелаTang, S. L., R. V. Kasowski, and B. A. Parkinson. "Scanning tunneling microscopy of the subsurface structures of tungsten ditelluride and molybdenum ditelluride." Physical Review B 39, no. 14 (May 15, 1989): 9987–91. http://dx.doi.org/10.1103/physrevb.39.9987.
Повний текст джерелаZhu, Xuesong, Dahao Wu, Shengzhi Liang, and Jing Liu. "Strain insensitive flexible photodetector based on molybdenum ditelluride/molybdenum disulfide heterostructure." Nanotechnology 34, no. 15 (February 3, 2023): 155502. http://dx.doi.org/10.1088/1361-6528/acb359.
Повний текст джерелаKhan, Md Azmot Ullah, Naheem Olakunle Adesina, and Jian Xu. "Near Unity Absorbance and Photovoltaic Properties of TMDC/Gold Heterojunction for Solar Cell Application." Key Engineering Materials 918 (April 25, 2022): 97–105. http://dx.doi.org/10.4028/p-uz62m4.
Повний текст джерелаДисертації з теми "Molybdenum Ditelluride"
Octon, T. "Optoelectronic properties of two-dimensional molybdenum ditelluride." Thesis, University of Exeter, 2019. http://hdl.handle.net/10871/35713.
Повний текст джерелаPark, Juhong. "Fabrication of Large-Scale and Thickness-Modulated Two-Dimensional Transition Metal Dichalcogenides [2D TMDs] Nanolayers." Thesis, University of North Texas, 2019. https://digital.library.unt.edu/ark:/67531/metadc1505271/.
Повний текст джерелаLiao, Wei-Chen, and 廖偉成. "Heterophase Interface of Molybdenum Ditelluride Transistor." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/frqwj6.
Повний текст джерела國立交通大學
電子研究所
106
Because of lack of dangling bonds at the contact interface, transition metal dichalcogenides (TMDs) encounter a significant challenge of reducing contact resistance. Heterophase edge-contacted structures, which form chemical bonds at the lateral interface, are promising solutions for the contact problem of TMD materials. Because of the similar ground-state energy of 2H and 1T’ phases of MoTe2, MoTe2 with a smaller phase transition barrier is considered as a highly potential candidate for realizing TMD devices with a heterophase contact. In this thesis, we successfully demonstrated heterophase edge-contacted MoTe2 back-gate transistors on a SiO2 substrate. We provided several methods for synthesizing 1T’-phase MoTe2 by sputtering amorphous MoTe2 films on the SiO2 substrate, such as control of synthesis temperature, atmosphere treatment, distilled water immersion, oxygen treatment and diluted HF treatment. By using the diluted HF treatment method, 1T’-phase MoTe2 was selectively formed at designated source/drain region treated by diluted HF while 2H-phase MoTe2 was formed at the channel region without treatment. Palladium (Pd) and nickel (Ni) was deposited by electron beam evaporation as the contact metal. 1T’-MoTe2/ Pd interface is an ohmic-like contact because of their metallic properties. The major contact barrier that influences devices performance is the heterophase interface. To investigate the properties of heterophase interface of MoTe2, both the traditional metal top-contacted structure and heterophase edge-contacted structure were simulated by the density functional theory (DFT) using the Vienna Ab initio simulation package (VASP). Schottky barrier height was extracted by two improved layer-decomposed density of states methods. The in-plane averaged electric potential method was used to evaluate the tunnel barrier at the interface. The traditional metal top-contacted structures have large tunnel barriers at the interface. By contrast, the heterophase edge-contacted structure shows a lower tunnel barrier and a comparable Schottky barrier height. The results suggest that the reduction of tunnel barrier at the interface is the main advantage of using the heterophase edge-contacted structure.
Bera, Achintya. "Topological Insulators and Transition Metal Dichalcogenides Under Extreme Conditions : Optical Studies." Thesis, 2017. http://etd.iisc.ac.in/handle/2005/4213.
Повний текст джерелаТези доповідей конференцій з теми "Molybdenum Ditelluride"
Helmrich, Sophia, Alexander W. Achtstein, Hery Ahmad, Matthias Kunz, Bastian Herzog, Oliver Schöps, Ulrike Woggon, and Nina Owschimikow. "High Phonon-limited Mobility in Mono- and Bilayer Molybdenum Ditelluride." In CLEO: QELS_Fundamental Science. Washington, D.C.: OSA, 2020. http://dx.doi.org/10.1364/cleo_qels.2020.ff3b.4.
Повний текст джерелаZhang, Qiyao, Hao Sun, Jiacheng Tang, Zhen Wang, Xingcan Dai, and Cun-Zheng Ning. "Trion Valley Polarization Dynamics in Electrically-gated Monolayer Molybdenum Ditelluride." In CLEO: QELS_Fundamental Science. Washington, D.C.: OSA, 2020. http://dx.doi.org/10.1364/cleo_qels.2020.fth3b.7.
Повний текст джерелаWang, Zhen, Hao Sun, Qiyao Zhang, Jiabin Feng, Jianxing Zhang, Yongzhuo Li, and Cun-Zheng Ning. "Observation of Trionic Optical Gain in Electrically Gated Two-Dimensional Molybdenum Ditelluride." In CLEO: QELS_Fundamental Science. Washington, D.C.: OSA, 2019. http://dx.doi.org/10.1364/cleo_qels.2019.fm4d.4.
Повний текст джерелаKumar, Prateek, Maneesha Gupta, and Kunwar Singh. "Low Leakage Current Molybdenum Ditelluride based nano FET using Non-Equilbrium Greens Function." In 2020 7th International Conference on Signal Processing and Integrated Networks (SPIN). IEEE, 2020. http://dx.doi.org/10.1109/spin48934.2020.9070986.
Повний текст джерелаTang, Jiacheng, Hao Sun, Qiyao Zhang, Xingcan Dai, Zhen Wang, and Cun-Zheng Ning. "Helicity-resolved Pump-Probe Observation of Biexciton Fine Structures in Monolayer Molybdenum Ditelluride." In CLEO: QELS_Fundamental Science. Washington, D.C.: OSA, 2021. http://dx.doi.org/10.1364/cleo_qels.2021.ftu4i.1.
Повний текст джерелаZhang, Qiyao, Hao Sun, Jiacheng Tang, Xingcan Dai, Zhen Wang, and Cun-Zheng Ning. "Electrical Control of Valley Polarization in Monolayer Molybdenum Ditelluride via Exciton-Trion Interactions." In Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2021. http://dx.doi.org/10.1364/acpc.2021.w1f.5.
Повний текст джерелаZhang, Qiyao, Hao Sun, Jiacheng Tang, Xingcan Dai, Zhen Wang, and Cun-Zheng Ning. "Electrical Control of Ultra-long Spin-Valley Polarization of Trions in Monolayer Molybdenum Ditelluride." In CLEO: Applications and Technology. Washington, D.C.: OSA, 2021. http://dx.doi.org/10.1364/cleo_at.2021.jw1a.41.
Повний текст джерелаDhar, N., P. Chelvanathan, K. S. Rahman, M. A. M. Bhuiyan, M. M. Alam, K. Sopian, and N. Amin. "Effect of p-type transition metal dichalcogenide molybdenum ditelluride (p-MoTe2) layer formation in Cadmium Telluride solar cells from numerical analysis." In 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). IEEE, 2013. http://dx.doi.org/10.1109/pvsc.2013.6744244.
Повний текст джерела