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Статті в журналах з теми "Microwave-Assisted Deposition"
Kang, In-Je, Chang-Hyun Cho, Hyonu Chang, Soo-Ouk Jang, Hyun-Jae Park, Dae-Gun Kim, Kyung-Min Lee, and Ji-Hun Kim. "Characteristics of Plasma Flow for Microwave Plasma Assisted Aerosol Deposition." Nanomaterials 11, no. 7 (June 29, 2021): 1705. http://dx.doi.org/10.3390/nano11071705.
Повний текст джерелаVANDENBULCKE, L., P. BOU, R. HERBIN, V. CHOLET, and C. BENY. "MICROWAVE PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION OF DIAMOND." Le Journal de Physique Colloques 50, no. C5 (May 1989): C5–177—C5–188. http://dx.doi.org/10.1051/jphyscol:1989525.
Повний текст джерелаZhou, Huan, Maryam Nabiyouni, and Sarit B. Bhaduri. "Microwave assisted apatite coating deposition on Ti6Al4V implants." Materials Science and Engineering: C 33, no. 7 (October 2013): 4435–43. http://dx.doi.org/10.1016/j.msec.2013.06.043.
Повний текст джерелаWu, Yong Qiang, and Si Kai Sun. "Microwave Assisted Eletroless Copper Plating on Carbon Nanotubes." Advanced Materials Research 399-401 (November 2011): 741–46. http://dx.doi.org/10.4028/www.scientific.net/amr.399-401.741.
Повний текст джерелаKumar, Rajesh, Rajesh Kumar Singh, Alfredo R. Vaz, and Stanislav A. Moshkalev. "Microwave-assisted synthesis and deposition of a thin ZnO layer on microwave-exfoliated graphene: optical and electrochemical evaluations." RSC Advances 5, no. 83 (2015): 67988–95. http://dx.doi.org/10.1039/c5ra09936f.
Повний текст джерелаSATO, Yoichiro. "Diamond film grown by microwave plasma-assisted vapor deposition." Journal of the Japan Society for Precision Engineering 53, no. 10 (1987): 1511–14. http://dx.doi.org/10.2493/jjspe.53.1511.
Повний текст джерелаIbiyemi, Abideen A., Ayodeji O. Awodugba, Olusola Akinrinola, and Abass A. Faremi. "Zinc-doped CdS nanoparticles synthesized by microwave-assisted deposition." Journal of Semiconductors 38, no. 9 (September 2017): 093002. http://dx.doi.org/10.1088/1674-4926/38/9/093002.
Повний текст джерелаChaudhuri, TapasK, and Anjana Kothari. "Microwave-Assisted Chemical Bath Deposition of Nanostructured ZnO Particles." Journal of Nanoscience and Nanotechnology 9, no. 9 (September 1, 2009): 5578–85. http://dx.doi.org/10.1166/jnn.2009.1119.
Повний текст джерелаLaimer, J., and S. Matsumoto. "Pulsed microwave plasma-assisted chemical vapour deposition of diamond." International Journal of Refractory Metals and Hard Materials 14, no. 1-3 (January 1996): 179–84. http://dx.doi.org/10.1016/0263-4368(96)83432-9.
Повний текст джерелаNdiege, Nicholas, Mark Shannon, and Richard I. Masel. "Silicon Nanowires Synthesized via Microwave-Assisted Chemical Vapor Deposition." Electrochemical and Solid-State Letters 10, no. 11 (2007): K55. http://dx.doi.org/10.1149/1.2774970.
Повний текст джерелаДисертації з теми "Microwave-Assisted Deposition"
Jayathilake, D. Subhashi Y. "Microwave-assisted synthesis and processing of transparent conducting oxides and thin film fabrication by aerosol-assisted deposition." Thesis, Loughborough University, 2017. https://dspace.lboro.ac.uk/2134/32450.
Повний текст джерелаWangensteen, Ted. "Growth And Characterization Of Functional Nanoparticulate Films By A Microwave Plasma-Assisted Spray Deposition Process." Scholar Commons, 2012. http://scholarcommons.usf.edu/etd/4417.
Повний текст джерелаMerlak, Marek Radoslaw. "Design and Characterization of Microwave Assisted Plasma Spray Deposition System: Application to Eu Doped Y2O3 Nano-Particle Coatings." Scholar Commons, 2010. https://scholarcommons.usf.edu/etd/1711.
Повний текст джерелаHsiang, Chen-chih, and 項承智. "Epitaxial growth of ZnO by microwave-assisted chemical bath deposition." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/w9pmt8.
Повний текст джерела國立交通大學
材料科學與工程學系所
106
Microwave-assisted chemical bath deposition (MWCBD) is a newly developed method for rapid synthesis of single-crystalline ZnO nanorods. In this study, MWCBD was used to synthesize ZnO with high-quality epitaxial ZnO film, using hexahydrate zinc nitrate (Zn(NO3)2∙6H2O) as the Zn2+ source, hexamethylenetetramine (HMT, C6H12N4) as pH buffer, GaN/sapphire as the substrate with small lattice mismatch with ZnO, at temperature less than 100°C. Also, the effect of sodium citrate (Na3C6H5O7) as the capping agent on lateral growth of ZnO rod for continuous film formation has been explored based on the evolution of the measured aspect ratio of height-to-width in the microwave environment. Additionally, the effects of temperature, concentration, and time on pH change of aqueous solutions with precipitation of ZnO powders and during microwave heating were evaluated. When the heating temperature is increased, the color of the aqueous solution as seen from the visual appearance becomes more pure white as more precipitated ZnO powders were produced and the pH value decreases from 6.8 to about 5.5. Increasing the concentration of zinc nitrate precursor results in the higher quantity of ZnO powders and reduction of the pH value of the aqueous solution. In the study of ZnO epitaxy on GaN, scanning electron microscopy observations in top view and cross-section show that thin film of epitaxial ZnO in thickness of about 1 μm can be effectively grown on GaN/sapphire with MWCBD by adding sodium citrate to the solution to enhance the lateral growth of ZnO rods with coalescence. It is found that to reach an aspect ratio of height to width of 0.83, the concentration of sodium citrate is required to increase to 0.04 mM which can still have an average growth rate of ~ 1 m/h. The film quality as characterized by x-ray diffraction in –scan shows a full width at half maximum of the (0004) rocking curve in 860 arcsec, which is twice as high as substrate of GaN, whereas it is 1288 arcsec for (303 ̅2) FWHM slightly increased from 1078 arcsec for GaN, suggesting that ZnO film quality is mainly affected by screw dislocations formed in rod nucleation.
Yen-ChenLin and 林彥辰. "Microwave Plasma Assisted Chemical Vapor Deposition of Single Crystal Diamond." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/3f6cd7.
Повний текст джерелаWu, Chih-Chung, and 吳致中. "The copper indium selenide precursor synthesized by microwave-assisted hydro-/solvo-thermal method and its film fabricated by electrophoresis deposition." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/24414721488942660708.
Повний текст джерела國立臺灣科技大學
化學工程系
96
The objective of the presented study is to fabricate uniform, dense CuInSe2 thin film for next-generation solar cells by employing electrophoresis deposition technique (EPD). The study can be divided into two parts, including synthesis of CuInSe2 particles and preparation of CuInSe2 thin films by using EPD technique. First, the viability of microwave-assisted solvo- and hydro-thermal method in the preparation of CuInSe2 materials is investigated. For microwave-assisted solvo-thermal method, pure chalcopyrite structure of the materials was achieved within 30 min with ethylenediamine as solvent, indicating the success in synthesis of CuInSe2 materials. The results showed great improvement for synthesis of CuInSe2 since materials can only be synthesized with at least 20-fold time with conventional heating. The morphologies of the synthesized CuInSe2 materials can be controlled with appropriate pretreatment, however, it is not suitable for the subsequent EPD technique. Therefore, low cost and environmental friendly microwave-assisted hydrothermal method was employed instead of solvothermal one for possible use in thin film fabrication by EPD. It was found that stoichiometric CuInSe2 precursors are able to be synthesized with uniform morphology at the condition of 180 oC for 30 mins. Reduction of the process time is also observed as well. Further the chalcopyrite CuInSe2 particles can be obtained by the post reduction process at 500℃ in H2. On the other hand, deposition of the CuInSe2 thin film by EPD technique was performed with the hydrothermal-derived CuInSe2 precursors. The technique possesses the characteristics of short processing time and precise control in film thickness. Nevertheless, the prepared thin films are porous even after reduction at 600 oC. The fact may result from the loss of oxygen during reduction process as well as the originally porous nature for the precursor thin film. The behavior can be the guide for the future improvement. Besides, the reduced CuInSe2 thin film was analyzed by Raman and XPS, in which only chalcopyrite structure was shown without any impurities.
Li, Wei-Shuo, and 李偉碩. "Ultra-Sensitive Dopamine Biosensor Using Microwave-Assisted Solution Phase Deposition of a 3-Aminopropyltriethoxysilane and Polydimethylsiloxane-Treated Silica Nanoparticle Mixture as the Sensing Membrane." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/74322536277384179214.
Повний текст джерела國立暨南國際大學
應用材料及光電工程學系
103
In this thesis, microwave-assisted solution phase deposition (MW-SPD) method was used for growing the large-area sensing membrane of a 3-aminopropyltriethoxysilane (γ-APTES) and polydimethylsiloxane (PDMS)-treated silica nanoparticles mixture (γ-APTES+NPs) on polysilicon wires in the batch fabrication of dopamine biosensors. We investigated to grow the γ-APTES+NPs membrane using a solution contained mixture of γ-APTES+NPs and C2H5OH in a microwave oven with fixed power at 90 W. To characterize the film properties, γ-APTES+NPs films were prepared by MW-SPD with different deposit times or ultraviolet(UV) light exposure at different stages during deposition. The effects of microwave annealing on film property were also studied. In order to prove theγ-APTES were incorporated with silica nanoparticles during MW-SPD, we conducted the analyses including atomic force microscopy(AFM), ellipsometer, dynamic light scattering (DLS), micro-Raman spectroscopy and X-ray photoelectron spectrometer (XPS). It was found that MW-SPD could reduce the deposition time of γ-APTES+NPs significantly. The best deposition time for SPD at room temperature was 6 hours, but for the MW-SPD was only 15 minutes. The detectable range of the dopamine biosensor using γ-APTES+NPs as sensing membrane could be improved from 1×10-15 M ~ 1×10-3 M to 1×10-20 M ~ 1×10-3 M by MW-SPD process. The lowest detection limit was improved by 5 orders of magnitude. The UV illumination could further improve the biosensor with a detectable range of 1×10-24 M ~ 1×10-3 M. The lowest detection limit for dopamine was improved by 9 orders of magnitude for γ-APTES+NPs with MW-SPD+UV process.. As for the microwave annealing processes, we found that the sensitivity of the lowest detection limit for theγ-APTES+NPs prepared by the SPD could be significantly improved by the post microwave annealing treatment. For γ-APTES+NPs growing by a 6 hour SPD, a 15 minute microwave anneal could improve the detectable range from 1×10-15 M ~ 1×10-3 M to 10-21 M ~ 1×10-3 M. The lowest detection limit for dopamine was improved by 6 orders of magnitude. From Raman spectra of the membranes, enhanced absorption peaks of Si-O-Si bond were observed in all the films incorporated with silica NPs, especially for γ-APTES+NPs using MW-SPD process. The XPS analyses showed that the percentage of Si on the γ-APTES+NPs surface was larger than theγ-APTES. The silica nanoparticles were proved to be incorporated in γ-APTES during SPD. Because the thicknesses of γ-APTES+NPs membranes were in between 1nm and 3nm, it was reasonable to believe that the diameters of the incorporated silica nanoparticles were in the range of 1nm-3nm, resulting in ultra-high surface to volume ratio for the film and ultra-sensitive lowest detection limit for dopamine.
Wen, Jia-Ru, and 溫佳儒. "Ultra-sensitive dopamine biosensor using microwave-assisted solution phase deposition of a 3-aminopropyltriethoxysilane and dimethyldichlorosilane-treated silica nanoparticle mixture as the sensing membrane." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/87206716063173936081.
Повний текст джерела國立暨南國際大學
應用材料及光電工程學系
103
In this thesis, solution phase deposition (SPD) and microwave-assisted solution phase deposition (MW-SPD) methods were used for growing the large-area sensing membrane of a 3-aminopropyltriethoxysilane (γ-APTES) and dimethyldichlorosilane (DDS)-treated silica nanoparticles mixture (γ-APTES+NPs) on polysilicon wires in the batch fabrication of dopamine biosensors. We compared the characteristics of the γ-APTES+NPs membrane prepared by SPD and MW-SPD at fixed power using a solution contained mixture of γ-APTES+NPs and C2H5OH. We investigated the hotplate and microwave annealing (MWA) effects on the sensitivity of dopamine detection. The effects of ultraviolet (UV) light exposure at different stages during deposition on the film properties were also studied.. In order to prove the DDS-treated silica nanoparticles were incorporated with γ-APTES during SPD and MW-SPD, we conducted the analyses including ellipsometer, dynamic light scattering (DLS) and micro-Raman spectroscopy. It was found that MW-SPD could reduce the deposition time of γ-APTES+NPs significantly. The best deposition time for SPD at room temperature was 6 hours, but for the MW-SPD was only 15 minutes. The detectable range of the dopamine biosensor using γ-APTES+NPs as sensing membrane could be improved from 1×10-21 M ~ 1×10-3 M to 1×10-25 M ~ 1×10-3 M by MW-SPD process. The lowest detection limit was improved by 4 orders of magnitude. The UV illumination could further improve the biosensor with a detectable range of 1×10-27 M ~ 1×10-3 M. The lowest detection limit for dopamine was improved by 6 orders of magnitude for γ-APTES+NPs with MW-SPD+UV process. As for the microwave annealing processes, we found that the sensitivity of the lowest detection limit for the γ-APTES+NPs prepared by SPD could be significantly improved by the post-deposition of microwave annealing. For γ-APTES+NPs growing by a 6 hour SPD, a 15 minute microwave anneal could improve the detectable range from 1×10-21 M ~10-3 M to 1×10-27 M ~ 1×10-3 M. The lowest detection limit for dopamine was improved by 6 orders of magnitude. The UV illumination after microwave annealing could further improve the biosensor with a detectable range of 1×10-30 M ~ 1×10-3 M. The lowest detection limit for dopamine was improved by 9 orders of magnitude. From the Raman spectra of the membranes, enhanced absorption peaks of Si-O-Si bond were observed in all the films incorporated with silica NPs, especially for γ-APTES+NPs using MW-SPD process. The number of Si-O-Si bonds increased as the NPs incorporated with the γ-APTES. The absorption peaks of Si-O-Si bond were also enhanced for all the films with ultraviolet (UV) light exposure. The γ-APTES+NPs using SPD+MWA+UV process showed the highest absorption peak of Si-O-Si bond. The sensitivity of lowest detection limit increased with the value of absorption peak of Si-O-Si bond. Because the thicknesses of γ-APTES+NPs membranes were in between 1nm and 3nm, it was reasonable to believe that the diameters of the incorporated silica nanoparticles were in the range of 1nm-3nm, resulting in ultra-high surface to volume ratio for the film and ultra-sensitive lowest detection limit for dopamine.
Jena, Anirudha. "Development of Metal Oxide/Composite Nanostructures via Microwave-Assisted Chemical Route and MOCVD : Study of their Electrochemical, Catalytic and Sensing Applications." Thesis, 2012. https://etd.iisc.ac.in/handle/2005/3233.
Повний текст джерелаJena, Anirudha. "Development of Metal Oxide/Composite Nanostructures via Microwave-Assisted Chemical Route and MOCVD : Study of their Electrochemical, Catalytic and Sensing Applications." Thesis, 2012. http://hdl.handle.net/2005/3233.
Повний текст джерелаКниги з теми "Microwave-Assisted Deposition"
Bastani-Parizi, Hamideh. Chemical kinetic calculations of the gas phase in atmospheric microwave plasma-assisted chemical vapor deposition of diamond. Ottawa: National Library of Canada, 1993.
Знайти повний текст джерелаЧастини книг з теми "Microwave-Assisted Deposition"
Purniawan, A., E. Hamzah, and M. R. M. Toff. "Surface Roughness and Morphology Analysis Using an Atomic Force Microscopy of Polycrystalline Diamond Coated Si3N4 Deposited by Microwave Plasma Assisted Chemical Vapor Deposition." In Solid State Phenomena, 153–60. Stafa: Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/3-908451-50-7.153.
Повний текст джерелаAsmussen, Jes, and Timothy Grotjohn. "Microwave Plasma-Assisted Diamond Film Deposition." In Diamond Films Handbook. CRC Press, 2002. http://dx.doi.org/10.1201/9780203910603.ch7.
Повний текст джерелаBandas, Cornelia, Carmen Lazau, Mircea Nicolaescu, Corina Orha, Aniela Pop, and Simona Caprarescu. "Microwave-assisted Hydrothermal Deposition of Reduced Graphene Oxide on Ti Foil." In Current Topics and Emerging Issues in Materials Sciences Vol. 1, 19–47. B P International (a part of SCIENCEDOMAIN International), 2023. http://dx.doi.org/10.9734/bpi/cteims/v1/18639d.
Повний текст джерелаNing, Ke, and Guang Zhu. "Microwave-Assisted Chemical Bath Deposition Method for Quantum Dot-Sensitized Solar Cells." In Functional Nanomaterial for Photoenergy Conversion, 209–42. WORLD SCIENTIFIC, 2020. http://dx.doi.org/10.1142/9789811222405_0005.
Повний текст джерелаMatsubara, Yoshio, Koji Miyake, Hideaki Tahara, Shuichi Nogawa, and Junzo Ishikawa. "OXYGEN ION SOURCE WITH MICROWAVE PLASMA (MP) CATHODE FOR ION BEAM ASSISTED DEPOSITION." In Ion Implantation Technology–92, 475–78. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-89994-1.50103-4.
Повний текст джерела"Fabrication Techniques for Quantum Dots." In Materials Research Foundations, 53–80. Materials Research Forum LLC, 2021. http://dx.doi.org/10.21741/9781644901250-2.
Повний текст джерелаТези доповідей конференцій з теми "Microwave-Assisted Deposition"
Grotjohn, Timothy A., Ayan Bhattacharya, and Steven Zajac. "Microwave plasma-assisted deposition of boron doped single crystal diamond." In 2016 IEEE International Conference on Plasma Science (ICOPS). IEEE, 2016. http://dx.doi.org/10.1109/plasma.2016.7534222.
Повний текст джерелаBadzian, Andrzej R., Teresa Badzian, and Dave Pickrell. "Crystallization Of Diamonds By Microwave Plasma Assisted Chemical Vapor Deposition." In 32nd Annual Technical Symposium, edited by Albert Feldman and Sandor Holly. SPIE, 1989. http://dx.doi.org/10.1117/12.948136.
Повний текст джерелаGu, Y., J. Lu, T. A. Grotjohn, T. Schuelke, and J. Asmussen. "Microwave plasma assisted reactor design for high deposition rate diamond synthesis." In 2011 IEEE 38th International Conference on Plasma Sciences (ICOPS). IEEE, 2011. http://dx.doi.org/10.1109/plasma.2011.5993127.
Повний текст джерелаMahajan, J. R. "ZnO nano flowers formation by microwave assisted chemical bath deposition technique." In INDIAN VACUUM SOCIETY SYMPOSIUM ON THIN FILMS: SCIENCE AND TECHNOLOGY. AIP, 2012. http://dx.doi.org/10.1063/1.4732399.
Повний текст джерелаWeimer, Wayne A., Frank M. Cerio, and Curtis E. Johnson. "Plasma parameters in microwave-plasma-assisted chemical vapor deposition of diamond." In San Diego, '91, San Diego, CA, edited by Albert Feldman and Sandor Holly. SPIE, 1991. http://dx.doi.org/10.1117/12.48275.
Повний текст джерелаMeierbachtol, C. S., T. A. Grotjohn, and B. Shanker. "Computational modeling of moderate pressure microwave plasma-assisted chemical vapor deposition reactors." In 2012 IEEE 39th International Conference on Plasma Sciences (ICOPS). IEEE, 2012. http://dx.doi.org/10.1109/plasma.2012.6383719.
Повний текст джерелаTran, D. T., T. A. Grotjohn, and J. Asmussen. "Synthesis of ultrananocrystalline diamond films by microwave plasma assisted chemical vapor deposition system." In The 33rd IEEE International Conference on Plasma Science, 2006. ICOPS 2006. IEEE Conference Record - Abstracts. IEEE, 2006. http://dx.doi.org/10.1109/plasma.2006.1707163.
Повний текст джерелаMuneyoshi, T. "Growth mechanism of carbon nanotubes grown by microwave plasma-assisted chemical vapor deposition." In NANONETWORK MATERIALS: Fullerenes, Nanotubes, and Related Systems. AIP, 2001. http://dx.doi.org/10.1063/1.1420053.
Повний текст джерелаPAULEAU, Y., V. M. ANISHCHIK, A. K. KULESHOV, M. V. ASTASHYNSKAYA, and M. P. SAMTSOV. "STRUCTURE OF NICKEL/CARBON NANOCOMPOSITE FILMS FORMED BY MICROWAVE PLASMA-ASSISTED DEPOSITION TECHNIQUE." In Reviews and Short Notes to Nanomeeting-2005. WORLD SCIENTIFIC, 2005. http://dx.doi.org/10.1142/9789812701947_0117.
Повний текст джерелаChou, Kevin, Raymond Thompson, Feng Qin, Dustin Nolen, and Chao Miao. "Nanostructured Diamond Coatings for Dry Drilling." In ASME/STLE 2009 International Joint Tribology Conference. ASMEDC, 2009. http://dx.doi.org/10.1115/ijtc2009-15072.
Повний текст джерела