Статті в журналах з теми "Microelectronic devices"
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Brodie, I., and P. R. Schwoebel. "Vacuum microelectronic devices." Proceedings of the IEEE 82, no. 7 (July 1994): 1006–34. http://dx.doi.org/10.1109/5.293159.
Повний текст джерелаvon Windheim, Tasso, Kristin H. Gilchrist, Charles B. Parker, Stephen Hall, James B. Carlson, David Stokes, Nicholas G. Baldasaro, et al. "Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters." Micromachines 14, no. 5 (April 29, 2023): 973. http://dx.doi.org/10.3390/mi14050973.
Повний текст джерелаSrivastava, V. "THz vacuum microelectronic devices." Journal of Physics: Conference Series 114 (May 1, 2008): 012015. http://dx.doi.org/10.1088/1742-6596/114/1/012015.
Повний текст джерелаMANUSHIN, Dmitrii V., Guzel' R. TAISHEVA, and Shamil' I. ENIKEEV. "Russian microelectronics: Current state-of-the-art, logistics, management issues, crisis response measures." National Interests: Priorities and Security 19, no. 5 (May 16, 2023): 808–42. http://dx.doi.org/10.24891/ni.19.5.808.
Повний текст джерелаChen, Yuan, and Xiao Wen Zhang. "Applications of Focused Ion Beam Technology in Bonding Failure Analysis for Microelectronic Devices." Applied Mechanics and Materials 58-60 (June 2011): 2171–76. http://dx.doi.org/10.4028/www.scientific.net/amm.58-60.2171.
Повний текст джерелаMin, K. H., and J. Mardinly. "Electron Tomography of Microelectronic Devices." Microscopy and Microanalysis 9, S02 (July 22, 2003): 502–3. http://dx.doi.org/10.1017/s1431927603442517.
Повний текст джерелаEkpu, M., R. Bhatti, M. I. Okereke, and K. C. Otiaba. "Fatigue life analysis of Sn96.5Ag3.0Cu0.5 solder thermal interface material of a chip-heat sink assembly in microelectronic applications." International Symposium on Microelectronics 2013, no. 1 (January 1, 2013): 000473–77. http://dx.doi.org/10.4071/isom-2013-wa23.
Повний текст джерелаOSADCHUK, Iaroslav. "MICROELECTRONIC AUTOGENERATOR TEMPERATURE SENSORS." Herald of Khmelnytskyi National University. Technical sciences 317, no. 1 (February 23, 2023): 237–47. http://dx.doi.org/10.31891/2307-5732-2023-317-1-237-247.
Повний текст джерелаКриштоп, В. Г., Д. А. Жевненко, П. В. Дудкин, Е. С. Горнев, В. Г. Попов, С. С. Вергелес та Т. В. Криштоп. "ТЕХНОЛОГИЯ И ПРИМЕНЕНИЕ ЭЛЕКТРОХИМИЧЕСКИХ ПРЕОБРАЗОВАТЕЛЕЙ". NANOINDUSTRY Russia 96, № 3s (15 червня 2020): 450–55. http://dx.doi.org/10.22184/1993-8578.2020.13.3s.450.455.
Повний текст джерелаNorthrop, D. C. "Book Review: Introduction to Microelectronic Devices." International Journal of Electrical Engineering & Education 27, no. 1 (January 1990): 93. http://dx.doi.org/10.1177/002072099002700139.
Повний текст джерелаBaikerikar, K. K., and A. B. Scranton. "Photopolymerizable liquid encapsulants for microelectronic devices." Polymer 42, no. 2 (January 2001): 431–41. http://dx.doi.org/10.1016/s0032-3861(00)00388-8.
Повний текст джерелаOsenbach, John W. "Corrosion-induced degradation of microelectronic devices." Semiconductor Science and Technology 11, no. 2 (February 1, 1996): 155–62. http://dx.doi.org/10.1088/0268-1242/11/2/002.
Повний текст джерелаGorham, D. A. "Analysis of microelectronic materials and devices." Microelectronics Journal 24, no. 5 (August 1993): 594. http://dx.doi.org/10.1016/0026-2692(93)90143-3.
Повний текст джерелаBlackmore, G. W. "Analysis of Microelectronic Materials and Devices." Journal of Electroanalytical Chemistry 326, no. 1-2 (May 1992): 363–64. http://dx.doi.org/10.1016/0022-0728(92)80525-9.
Повний текст джерелаTyler, Talmage, Olga A. Shenderova, and Gary E. McGuire. "Vacuum microelectronic devices and vacuum requirements." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 23, no. 4 (July 2005): 1260–66. http://dx.doi.org/10.1116/1.1885019.
Повний текст джерелаGray, H. F. "The physics of vacuum microelectronic devices." IEEE Transactions on Electron Devices 36, no. 11 (November 1989): 2599. http://dx.doi.org/10.1109/16.43690.
Повний текст джерелаSchreutelkamp, R. J. "Analysis of microelectronic materials and devices." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 72, no. 1 (October 1992): 143. http://dx.doi.org/10.1016/0168-583x(92)95294-2.
Повний текст джерелаAdams, F. "Analysis of Microelectronic Materials and Devices." Analytica Chimica Acta 268, no. 1 (October 1992): 189. http://dx.doi.org/10.1016/0003-2670(92)85264-7.
Повний текст джерелаFowler, Michelle, Dongshun Bai, Curt Planje, and Xie Shao. "High-Aspect Ratio Planarization using Self-Leveling Materials." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, DPC (January 1, 2012): 002567–86. http://dx.doi.org/10.4071/2012dpc-tha35.
Повний текст джерелаAzizov, Asadulla, Elnora Ametova, and Feruza Shakirova. "Integrated microelectronic pulse shaper for automation and telemechanic systems in railway transport." E3S Web of Conferences 402 (2023): 03005. http://dx.doi.org/10.1051/e3sconf/202340203005.
Повний текст джерелаHawker, Craig J., James L. Hedrick, Robert D. Miller, and Willi Volksen. "Supramolecular Approaches to Nanoscale Dielectric Foams for Advanced Microelectronic Devices." MRS Bulletin 25, no. 4 (April 2000): 54–58. http://dx.doi.org/10.1557/mrs2000.30.
Повний текст джерелаLiu, Shiqian, Keith Sweatman, Stuart McDonald, and Kazuhiro Nogita. "Ga-Based Alloys in Microelectronic Interconnects: A Review." Materials 11, no. 8 (August 8, 2018): 1384. http://dx.doi.org/10.3390/ma11081384.
Повний текст джерелаAhmed, Wase U. "Metallography of Microelectronic Devices / Metallographie mikroelektronischer Bauteile." Practical Metallography 39, no. 8 (August 1, 2002): 437–48. http://dx.doi.org/10.1515/pm-2002-390807.
Повний текст джерелаRuhl, Guenther, Sebastian Wittmann, Matthias Koenig, and Daniel Neumaier. "The integration of graphene into microelectronic devices." Beilstein Journal of Nanotechnology 8 (May 15, 2017): 1056–64. http://dx.doi.org/10.3762/bjnano.8.107.
Повний текст джерелаLarson, D. J., D. Lawrence, W. Lefebvre, D. Olson, T. J. Prosa, D. A. Reinhard, R. M. Ulfig, et al. "Toward atom probe tomography of microelectronic devices." Journal of Physics: Conference Series 326 (November 9, 2011): 012030. http://dx.doi.org/10.1088/1742-6596/326/1/012030.
Повний текст джерелаMecklenburg, Matthew, William A. Hubbard, E. R. White, Rohan Dhall, Stephen B. Cronin, Shaul Aloni, and B. C. Regan. "Nanoscale temperature mapping in operating microelectronic devices." Science 347, no. 6222 (February 5, 2015): 629–32. http://dx.doi.org/10.1126/science.aaa2433.
Повний текст джерелаChin, K. Ken, and R. B. Marcus. "Field emitter tips for vacuum microelectronic devices." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8, no. 4 (July 1990): 3586–90. http://dx.doi.org/10.1116/1.576511.
Повний текст джерелаWürfl, Joachim, Vera Abrosimova, Jochen Hilsenbeck, Erich Nebauer, Walter Rieger, and Günther Tränkle. "Reliability considerations of III-nitride microelectronic devices." Microelectronics Reliability 39, no. 12 (December 1999): 1737–57. http://dx.doi.org/10.1016/s0026-2714(99)00181-x.
Повний текст джерелаBerbezier, I., and A. Ronda. "Si/SiGe heterostructures for advanced microelectronic devices." Phase Transitions 81, no. 7-8 (July 2008): 751–72. http://dx.doi.org/10.1080/01411590802130576.
Повний текст джерелаLiechti, K. M. "Residual stresses in plastically encapsulated microelectronic devices." Experimental Mechanics 25, no. 3 (September 1985): 226–31. http://dx.doi.org/10.1007/bf02325091.
Повний текст джерелаHersee, S. D., L. Yang, M. Kao, P. Martin, J. Mazurowski, A. Chin, and J. Ballingall. "MOMBE GaAs and AlGaAs for microelectronic devices." Journal of Crystal Growth 120, no. 1-4 (May 1992): 218–27. http://dx.doi.org/10.1016/0022-0248(92)90394-x.
Повний текст джерелаMizoguchi, Katsuhiro, and Etsuo Hasegawa. "Photoactive Polymers Applied to Advanced Microelectronic Devices." Polymers for Advanced Technologies 7, no. 5-6 (May 1996): 471–77. http://dx.doi.org/10.1002/(sici)1099-1581(199605)7:5/6<471::aid-pat534>3.0.co;2-r.
Повний текст джерелаWietrzak, A., and D. Poulikakos. "Turbulent forced convective cooling of microelectronic devices." International Journal of Heat and Fluid Flow 11, no. 2 (June 1990): 105–13. http://dx.doi.org/10.1016/0142-727x(90)90003-t.
Повний текст джерелаKarnaushenko, Daniil, Tong Kang, Vineeth K. Bandari, Feng Zhu, and Oliver G. Schmidt. "3D Microelectronics: 3D Self‐Assembled Microelectronic Devices: Concepts, Materials, Applications (Adv. Mater. 15/2020)." Advanced Materials 32, no. 15 (April 2020): 2070120. http://dx.doi.org/10.1002/adma.202070120.
Повний текст джерелаYang, Qing, John Mardinly, Christian Kübel, Chris Nelson, and Christian Kisielowski. "Electron tomography of microelectronic device interconnects." International Journal of Materials Research 97, no. 7 (July 1, 2006): 880–84. http://dx.doi.org/10.1515/ijmr-2006-0142.
Повний текст джерелаWong Mian Sheng, Abdulhafid M Elfaghi, and Lukmon Owolabi Afolabi. "Numerical Study on Heat Propagation in Laptop Cooling System." Journal of Advanced Research in Fluid Mechanics and Thermal Sciences 99, no. 1 (October 17, 2022): 58–65. http://dx.doi.org/10.37934/arfmts.99.1.5865.
Повний текст джерелаWang, Guang Yin. "Investigation Progress on Microelectronic Materials: Carbon Nanotube and Graphene." Advanced Materials Research 531 (June 2012): 165–67. http://dx.doi.org/10.4028/www.scientific.net/amr.531.165.
Повний текст джерелаGavrysh, V. I. "Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices." Semiconductor Physics Quantum Electronics and Optoelectronics 14, no. 4 (December 5, 2011): 478–81. http://dx.doi.org/10.15407/spqeo14.04.478.
Повний текст джерелаMoon, F. C. "Mechanics of Electronic and Electromechanical Devices." Applied Mechanics Reviews 38, no. 10 (October 1, 1985): 1294–96. http://dx.doi.org/10.1115/1.3143696.
Повний текст джерелаRuggles, T. J. "Local Stress Measurements in Microelectronic Devices Using HREBSD." Microscopy and Microanalysis 28, S1 (July 22, 2022): 578–79. http://dx.doi.org/10.1017/s1431927622002896.
Повний текст джерелаLiang, Cai, and Pierino Zappella. "Advanced Packaging Solution to Hermetically Packaging Microelectronic Devices." IEEE Transactions on Components, Packaging and Manufacturing Technology 11, no. 7 (July 2021): 1055–62. http://dx.doi.org/10.1109/tcpmt.2021.3091593.
Повний текст джерелаW., TAZBIT, and MIALHE P. "RELIABILITY OF MICROELECTRONIC DEVICES FROM EMITTERBASE JUNCTION CHARACTERIZATION." International Conference on Applied Mechanics and Mechanical Engineering 13, no. 13 (May 1, 2008): 29–37. http://dx.doi.org/10.21608/amme.2008.39820.
Повний текст джерелаCruz Duarte, Jorge Mario, Iván Mauricio Amaya Contreras, and Carlos Rodrigo Correa Cely. "COOLING MICROELECTRONIC DEVICES USING OPTIMAL MICROCHANNEL HEAT SINKS." Revista EIA 12, no. 24 (November 30, 2015): 151–66. http://dx.doi.org/10.24050/reia.v12i24.880.
Повний текст джерелаBonera, Emiliano, Marco Fanciulli, and Marcello Mariani. "Raman spectroscopy of strain in subwavelength microelectronic devices." Applied Physics Letters 87, no. 11 (September 12, 2005): 111913. http://dx.doi.org/10.1063/1.2045545.
Повний текст джерелаOwen, G. "Electron lithography for the fabrication of microelectronic devices." Reports on Progress in Physics 48, no. 6 (June 1, 1985): 795–851. http://dx.doi.org/10.1088/0034-4885/48/6/002.
Повний текст джерелаScott, J. F., C. A. Paz de Araujo, L. D. McMillan, H. Yoshimori, H. Watanabe, T. Mihara, M. Azuma, et al. "TdI10: Ferroelectric thin films in integrated microelectronic devices." Ferroelectrics 133, no. 1 (August 1992): 47–60. http://dx.doi.org/10.1080/00150199208217976.
Повний текст джерелаJung, Yei Hwan, Huilong Zhang, Sang June Cho, and Zhenqiang Ma. "Flexible and Stretchable Microwave Microelectronic Devices and Circuits." IEEE Transactions on Electron Devices 64, no. 5 (May 2017): 1881–93. http://dx.doi.org/10.1109/ted.2016.2646361.
Повний текст джерелаGrasserbauer, M., G. Stingeder, H. Pötzl, and E. Guerrero. "Analytical science for the development of microelectronic devices." Fresenius' Zeitschrift für analytische Chemie 323, no. 5 (January 1986): 421–49. http://dx.doi.org/10.1007/bf00470757.
Повний текст джерелаMcCracken, Michael, Michael Mayer, Isaac Jourard, Jeong-Tak Moon, and John Persic. "Symmetric miniaturized heating system for active microelectronic devices." Review of Scientific Instruments 81, no. 7 (July 2010): 075112. http://dx.doi.org/10.1063/1.3469794.
Повний текст джерелаSudarshan, T. S., Xianyun Ma, and P. G. Muzykov. "High field insulation relevant to vacuum microelectronic devices." IEEE Transactions on Dielectrics and Electrical Insulation 9, no. 2 (April 2002): 216–25. http://dx.doi.org/10.1109/94.993738.
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