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Статті в журналах з теми "Metallic films"

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Автор: Grafiati

Опубліковано: 4 червня 2021

Оновлено: 31 липня 2024

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1

Česnek, J., J. Dobiáš, J. Houšová, and J. Sedláček. "Properties of thin metallic films for microwave susceptors." Czech Journal of Food Sciences 21, No. 1 (November 18, 2011): 34–40. http://dx.doi.org/10.17221/3475-cjfs.

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Thin Al films of varying thickness, i.e. 3 to 30 nm, were deposited onto polyethylene-terephthalate film by evaporation in the vacuum of 3 × 10<sup>–3</sup> Pa. The dependence of DC (direct current) surface resistance on thickness was measured using a four-point method. The surface resistance exhibits the size effect in accordance with the Fuchs-Sondheimer theory. The microwave absorption properties of the prepared films of various metallization thickness were measured in a microwave field at the microwave power of 1.8 mW. The maximum microwave absorption at 2.45 GHz was found to occur in a layer of optical density of about 0.22.  

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2

Sysoiev, Yu A. "Metallic films for triggering vacuum-arc plasma sources." Functional materials 21, no. 1 (March 30, 2014): 47–51. http://dx.doi.org/10.15407/fm21.01.047.

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3

Cheng, Jin, Xiao Ping Zou, Xiang Min Meng, Gang Qiang Yang, Xue Ming Lü, Cui Liu Wei, Zhe Sun, Hong Ying Feng, and Yuan Yang. "Electrochemical Deposition of Metallic Lead Particle Film." Advanced Materials Research 123-125 (August 2010): 423–26. http://dx.doi.org/10.4028/www.scientific.net/amr.123-125.423.

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The preparation of metallic lead films by electrochemical deposition was reported. Although primary deposits at fresh state (also referred to as fresh deposits) were indeed metallic lead films, the fresh lead films could be rapidly oxidized to lead oxide in air. To obtain long stable metallic lead films, the key process is how to prevent the oxidization of fresh lead films. Our studies indicate that the washing of fresh metallic lead films in absolute alcohol is a simple but effective method to protect the lead films from the oxidization for an extended period of more than 20 days.

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4

Pardoen, Thomas, Michael Coulombier, Alexandre Boe, A. Safi, Charles Brugger, Sophie Ryelandt, Pierre Carbonnelle, Sébastien Gravier, and Jean Pierre Raskin. "Ductility of Thin Metallic Films." Materials Science Forum 633-634 (November 2009): 615–35. http://dx.doi.org/10.4028/www.scientific.net/msf.633-634.615.

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Depending on the loading conditions, geometry and material characteristics, the ductility of thin metallic films is controlled either by the resistance to plastic localization or by the resistance to internal damage. New on-chip tensile tests performed on submicron aluminium films show significant strain hardening capacity leading to relatively good resistance to necking, while damage occurs through void nucleation at grain boundaries followed by their growth and coalescence. These results are discussed in the light of several other studies presented in the recent literature in order to unravel the origins of the frequently reported poor ductility of thin metallic films, and the various means existing to improve it.

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5

Zhang, Kaiqi, Congmian Zhen, Wengang Wei, Wenzhe Guo, Guide Tang, Li Ma, Denglu Hou, and Xiancheng Wu. "Insight into metallic behavior in epitaxial half-metallic NiCo2O4 films." RSC Advances 7, no. 57 (2017): 36026–33. http://dx.doi.org/10.1039/c7ra03136j.

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Understanding the cation distribution and electronic transport properties of half-metallic NiCo₂O₄ (NCO) films is crucial to advancing their practical applications in optoelectronic materials.

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6

Ossi, P. M., and R. Pastorelli. "Structural stability of irradiated metallic and non-metallic films." Surface and Coatings Technology 125, no. 1-3 (March 2000): 61–65. http://dx.doi.org/10.1016/s0257-8972(99)00548-4.

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7

Varchenya, S. A., A. Simanovskis, and S. V. Stolyarova. "Adhesion of thin metallic films to non-metallic substrates." Thin Solid Films 164 (October 1988): 147–52. http://dx.doi.org/10.1016/0040-6090(88)90125-3.

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8

Mochizuki, Chihiro, Takashi Senga, and Masami Shibata. "Pd-Based Metallic Glass Films Formed by Electrodeposition Process." Solid State Phenomena 194 (November 2012): 183–86. http://dx.doi.org/10.4028/www.scientific.net/ssp.194.183.

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The formation of Pd-Ni-P and Pd-Ni-Cu-P metallic glass films using the electrodeposition method was examined. In this study, the structure and composition of these metallic alloys were investigated at various condition of electrodeposition. The X-ray diffraction pattern on the electrodeposited Pd-Ni-P films in the range of 18-69 at% Pd, 12-62 at% Ni and 9-21 at% P showed a broad diffraction peak, which indicates metallic amorphous structure. A result of DSC showed that the electrodeposited Pd-Ni-P films in the range of 36-57 at% Pd, 24-47 at% Ni and 16-21 at% P were metallic glasses. In addition, it was proven that the electrodeposited Pd54Cu8Ni22P16 film was metallic glass.

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9

Nittono, Osamu. "Thin Films and Metallic Multilayers." Materia Japan 36, no. 9 (1997): 847–50. http://dx.doi.org/10.2320/materia.36.847.

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10

Gupta, D. "Diffusion in Metallic Thin Films." Defect and Diffusion Forum 59 (January 1991): 137–50. http://dx.doi.org/10.4028/www.scientific.net/ddf.59.137.

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11

Obi, Yoshihisa, Manabu Ikebe, Hideo Nakajima, and Hiroyasu Fujimori. "Superconductivity in Metallic Multilayered Films." Materia Japan 33, no. 10 (1994): 1290–98. http://dx.doi.org/10.2320/materia.33.1290.

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12

Sajfert, Vjekoslav, Dušan Popov, Bednar Nikola, and Bratislav Tošić. "Superconductivity of Thin Metallic Films." Journal of Computational and Theoretical Nanoscience 7, no. 8 (August 1, 2010): 1351–63. http://dx.doi.org/10.1166/jctn.2010.1489.

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13

Fan, Ping, Kui Yi, Jian-Da Shao, and Zheng-Xiu Fan. "Electrical transport in metallic films." Journal of Applied Physics 95, no. 5 (March 2004): 2527–31. http://dx.doi.org/10.1063/1.1644906.

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14

Avrekh, M., B. M. Thibadeau, O. R. Monteiro, and I. G. Brown. "Transparent, conducting, metallic thin films." Review of Scientific Instruments 70, no. 11 (November 1999): 4328–30. http://dx.doi.org/10.1063/1.1150075.

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15

Brotzen, F. R., C. T. Rosenmayer, C. G. Cofer, and R. J. Gale. "Creep of thin metallic films." Vacuum 41, no. 4-6 (January 1990): 1287–90. http://dx.doi.org/10.1016/0042-207x(90)93935-c.

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16

Ovchinnikov, Yu N. "Conductivity of granular metallic films." Journal of Experimental and Theoretical Physics 104, no. 2 (April 2007): 254–57. http://dx.doi.org/10.1134/s1063776107020100.

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17

Goodman, D. Wayne. "Chemistry on monolayer metallic films." Ultramicroscopy 34, no. 1-2 (November 1990): 1–9. http://dx.doi.org/10.1016/0304-3991(90)90050-v.

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18

Kierul, J., and J. Ledzion. "Conductivity of Thin Metallic Films." physica status solidi (a) 119, no. 2 (June 16, 1990): K117—K120. http://dx.doi.org/10.1002/pssa.2211190241.

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19

Kalkan, N. "Influence of Metallic Indium Concentration on the Properties of Indium Oxide Thin Films." High Temperature Materials and Processes 35, no. 9 (October 1, 2016): 949–54. http://dx.doi.org/10.1515/htmp-2015-0055.

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AbstractCurrent–voltage characteristics of indium-embedded indium oxide thin films (600–850 Å), with Ag electrodes approximately 1000 Å thick, prepared by reactive evaporation of pure metallic indium in partial air pressure have been studied for substrate temperatures between 50 and 125°C. The optical properties of these films have also been investigated as a function of metallic indium concentration and substrate temperature. I–V characteristics of all the samples are non-ohmic, independent of metallic indium concentration. The conductivity of the films increases but the optical transmission decreases with increasing metallic indium concentration. Metallic indium concentration was found to be an important parameter affecting the film properties. Furthermore, two possible conduction mechanisms are proposed.

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20

Tang, Wu, Xue Hui Wang, Yi Peng Chao, and Ke Wei Xu. "The Relationship between Residual Stress and Resistivity of Au/NiCr/Ta Multi-Layered Metallic Films by Magnetron Sputtering." Advanced Materials Research 150-151 (October 2010): 14–17. http://dx.doi.org/10.4028/www.scientific.net/amr.150-151.14.

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Au/NiCr/Ta multi-layered metallic films were deposited on Al2O3 substrate by magnetron sputtering at different substrate temperature. The effect of substrate temperature on magnetron sputtering Au/NiCr/Ta films in crystal orientation, residual stress and resistivity was investigated. The all magnetron sputtering films were highly textured with dominant Au-(111) orientation or a mixture of Au-(111) and Au-(200) orientation. The residual stress in magnetron sputtering films at different substrate temperature was tensile stress with 155MPa-400MPa. A smallest resistivity of 3.6µΩ.cm was obtained for Au/NiCr/Ta multi-layered metallic films at substrate temperature 180°C. The experiment results reveal that the resistivity increased with the increase of the residual stress of metallic films.

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21

Kamiko, Masao, and Ryoichi Yamamoto. "Surfactant-Mediated Epitaxial Growth of Metallic Thin Films." Advanced Materials Research 117 (June 2010): 55–61. http://dx.doi.org/10.4028/www.scientific.net/amr.117.55.

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The effects of several surfactants on the homoepitaxial and heteroepitaxial growth of metallic films and multilayers have been studied and compared. Our measurements clearly revealed that pre-deposition of a small amount of surfactant prior to the adatom deposition changed thin film growth mode and structure. The pre-deposited surfactant enhanced layer-by-layer (LBL) growth of the homoepitaxial and heteroepitaxial growth of metallic films. The surfactant also enhanced the epitaxial growth of metallic multilayer.

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22

Zhang, Chun Min, Xiao Yong Liu, Lin Qing Zhang, Hong Liang Lu, Peng Fei Wang, and David Wei Zhang. "Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing." Materials Science Forum 815 (March 2015): 8–13. http://dx.doi.org/10.4028/www.scientific.net/msf.815.8.

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A novel Ru thin film formation method was proposed to deposit metallic Ru thin films on TiN substrate for future backend of line process in semiconductor technologies. RuO2 thin films were first grown on TiN substrate by oxygen plasma-enhanced atomic layer deposition technique. The deposited RuO2 thin films were then reduced into metallic Ru thin films by H2/N2-assisted annealing.

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23

Harada, Takayuki, and Yoshinori Okada. "Metallic delafossite thin films for unique device applications." APL Materials 10, no. 7 (July 1, 2022): 070902. http://dx.doi.org/10.1063/5.0097269.

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Metallic delafossites ( ABO2) are layered oxides with quasi-two-dimensional conduction layers. Metallic delafossites are among the most conducting materials with the in-plane conductivity comparable with that of elemental metals. In this Perspective, we will discuss basic properties and future research prospects of metallic delafossites, mainly focusing on thin films and heterostructures. We exemplify the fascinating properties of these compounds, such as high conductivity and surface polarity, and discuss how it can be utilized in thin films and heterostructures.

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24

KIM, Su Jae, Miyeon CHEON, and Se-Young JEONG. "Making Metallic Thin Films Atomically Flat." Physics and High Technology 29, no. 7/8 (August 31, 2020): 3–12. http://dx.doi.org/10.3938/phit.29.024.

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Can we control the flatness of the surface of a thin film down to the level of individual atoms? Can we further make such an ultraflat surface on a wafer scale? For such purposes, the current deposition methods, including molecular beam epitaxy (MBE), atomic layer deposition (ALD) and conventional sputtering methods, are still not adequate. In this article, we introduce a novel thin film deposition technique developed by modifying a simple sputtering method to make atomically flat metallic surfaces and a new way to investigate the structural details of thin films grown at the atomic level. For thin film, heteroepitaxial growth of a crystalline film on a different crystalline substrate is usual, and the lattice mismatch between the crystalline film and the substrate occurring in heteroepitaxy produces many misfits at the interface, which create various defects, including dislocations and grain boundaries that eventually lead to a rough surface and the deterioration of the overall quality of the crystal. The metamorphic growth method utilizing the extended atomic distance mismatch (EADM) helps to achieve successful growth of thin films in spite of a large lattice mismatch by calculating the match for a relatively long period in advance. Having an ultraflat surface for thin films made of metals such as copper has many advantages. Several advantages and possible applications of metal thin films with ultraflat surfaces are introduced.

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25

XUE, Z. Q., H. J. GAO, W. M. LIU, Y. W. LIU, Q. D. WU, and S. J. PANG. "STUDY OF METALLIC CLUSTERS IN ORGANIC THIN FILMS." Surface Review and Letters 03, no. 01 (February 1996): 1029–32. http://dx.doi.org/10.1142/s0218625x96001844.

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The polyethylene (PE) and the metallic materials are deposited alternatively on substrates in the chamber of the ICB-TOFMS deposition system. The metallic-cluster-polyethylene thin films are formed. The film thickness is about 30 nm. The structures of these samples including Au-PE, Ag-PE, In-PE, and Sn-PE thin films are studied. These special thin films with suspension metal clusters display many special properties.

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26

Liang, S. H., T. L. Wang, X. Bai, and J. H. Li. "Cu-Zr-Nb Crystalline-Amorphous Composites Investigated by Thermodynamic Calculation and Ion Beam Mixing Experiments." Materials Science Forum 745-746 (February 2013): 793–98. http://dx.doi.org/10.4028/www.scientific.net/msf.745-746.793.

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The formation of Cu-Zr-Nb metallic glass was predicted by thermodynamic calculation and then five Cu-Zr-Nb ternary metallic multilayered films were designed and prepared by electron depositing. The metastable supersaturated solid solutions, amorphous phase as well as their composites were able to be obtained in these Cu-Zr-Nb metallic multilayered films upon ion beam mixing. The observations provided a clew to improve the ductibility of the metallic glasses. Some possible interpretations were presented concerning the formation of the crystalline-amorphous composite.

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27

Сотский, А. Б., Е. А. Чудаков та Л. И. Сотская. "Эллипсометрия металлических пленок в условиях аномального скин-эффекта". Оптика и спектроскопия 129, № 7 (2021): 889. http://dx.doi.org/10.21883/os.2021.07.51080.1847-21.

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Inhomogeneous Fredholm’s integral equations of the second kind are formulated, which describe the fields of TE and TM polarized waves in metallic films with allowance for the anomalous skin effect. The equations are solved numerically by the quadrature method. The electric fields in gold and aluminum films located on a silicon substrate and the angular dependences of the polarization angles of light reflected from the films are investigated. It is found that the solution of the inverse problem of multi-angle ellipsometry for metallic films using the standard model of the normal skin effect is characterized by instability of the reconstructed complex refractive index of the metal with a change in the thickness of the metallic film.

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28

Yang, Wen Yao, Jian Hua Xu, Si Yu Wang, and Yan Chen. "The Research of Gas-Sensing and Optical Characterization of Chlorinated Metallic Porphyrin Spin-Coated Films." Key Engineering Materials 531-532 (December 2012): 58–62. http://dx.doi.org/10.4028/www.scientific.net/kem.531-532.58.

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In this text, the Chlorinated metallic porphyrin (TPPMncl and TPPFecl) thin films were fabricated by Spin-coated technique onto quartz substrates. In order to search for the gas-sensing characterization of Chlorinated metallic porphyrin Spin-coated films, the changes of UV-Visible absorption spectrums of TPPMncl and TPPFecl Spin-coated films respectively exposed in vapor of Chloroform, pyridine, Ammonia, triethylamine and dimethylamine were analyzed. The experimental results show that, the spectral response of TPPMncl and TPPFecl on organic gas molecular is obviously found. And we know that chlorinated metallic porphyrin film formed the J-aggregates. Moreover, through two kinds of chlorinated metallic porphyrin integral area rate of histogram, it is easy to identify and distinguish between the four kinds of volatile organic compounds. It indicates that these Chlorinated metallic porphyrin have gasochromic characteristics while responding with organic gas. Therefore, these materials can be prepared into gas sensor array for detecting VOCS.

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29

Sauvan, Muriel, and Christophe Pijolat. "Selectivity improvement of SnO2 films by superficial metallic films." Sensors and Actuators B: Chemical 58, no. 1-3 (September 1999): 295–301. http://dx.doi.org/10.1016/s0925-4005(99)00147-1.

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30

Chiou, W. A., and R. Mitra. "In Situ TEM Study of Straining of Free Standing Nickel Thin Films." Microscopy and Microanalysis 6, S2 (August 2000): 464–65. http://dx.doi.org/10.1017/s1431927600034814.

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In situ dynamic experiments in the TEM provide a powerful and unique method of investigating materials, when they are subjected to different environments or treatments. Study of plastic deformation mechanisms of free standing thin metallic films have evoked strong research interest in recent years. In the past, free standing thin metallic films have been tested in tension, where the tensile properties were measured and compared with those of bulk samples. Certain other studies dealt with metallic films attached to the substrate, where the deformation was introduced by thermal cycling or mechanical straining. The deformaion of bulk nanocrystalline samples has also been extensively studied recently. However, few publications have documented in situ straining of free standing metallic films with ultrafine grain size. In this study, an in situ straining stage was employed in the TEM to deform a free standing thin nickel film with grain sizes in submicron and nanocrystalline range, and the goal was to observe the microstructural response to deformation.

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31

DONG ZHENG-CHAO, SHENG LI, XING DING-YU, and DONG JIN-MING. "QUANTUM TRANSPORT THEORY IN METALLIC FILMS." Acta Physica Sinica 46, no. 3 (1997): 568. http://dx.doi.org/10.7498/aps.46.568.

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32

Wang, Yanfeng, Fei Yang, Zhengjun Zhang, and Yiping Zhao. "Performance of Transparent Metallic Thin Films." Journal of Physical Chemistry C 125, no. 29 (July 19, 2021): 16334–42. http://dx.doi.org/10.1021/acs.jpcc.1c04832.

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33

Wu, Reng-Lai, Ye-Jun Long, Hong-Jie Xue, Yabin Yu, and Hui-Fang Hu. "Plasmon dispersions in ultrathin metallic films." International Journal of Modern Physics B 28, no. 27 (October 30, 2014): 1450189. http://dx.doi.org/10.1142/s0217979214501896.

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We present an eigen-equation for plasmon of ultrathin films based on the self-consistent linear response approximation (SCLRA). The calculations for plasmon dispersion in both single and multilayer systems are reported. There are two types of plasmon in the plasmon spectrum, two-dimensional (2D) and bulk-like (BL) modes. The plasmon energy of the 2D mode is zero in the long wave limit, while the one of BL mode is nonzero in the long-wave limit. Given a surface electron density, with the decrease of the wave vector the dispersions of the 2D plasmon of different layer systems become equal to each other, and approach results of the pure 2D system.

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34

Dimmich, R. "Optical properties of metallic multilayer films." Physical Review B 45, no. 7 (February 15, 1992): 3784–91. http://dx.doi.org/10.1103/physrevb.45.3784.

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35

Continentino, M. A., and E. V. Lins de Mello. "Two-dimensional ferromagnetism in metallic films." Journal of Physics: Condensed Matter 2, no. 13 (April 2, 1990): 3131–34. http://dx.doi.org/10.1088/0953-8984/2/13/023.

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36

BELOTSKII, E. D., and P. M. TOMCHUK. "Hot electrons in island metallic films." International Journal of Electronics 69, no. 1 (July 1990): 173–78. http://dx.doi.org/10.1080/00207219008920304.

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37

Knorr, D. B., D. P. Tracy, and T. M. Lu. "Texture Development in Thin Metallic Films." Textures and Microstructures 14 (1991): 543–54. http://dx.doi.org/10.1155/tsm.14-18.543.

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38

Kumar, Sunil, and George C. Vradis. "Thermal Conductivity of Thin Metallic Films." Journal of Heat Transfer 116, no. 1 (February 1, 1994): 28–34. http://dx.doi.org/10.1115/1.2910879.

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This study examines the effect of transverse thickness on the in-plane thermal conductivity of single crystal, defect-free, thin metallic films. The imposed temperature gradient is along the film and the transport of thermal energy is predominantly due to free electron motion. The small size necessitates an evaluation of the Boltzmann equation of electron transport along with appropriate electron scattering boundary conditions. Simple expressions for the reduction of conductivity due to increased dominance of boundary scattering are presented and the results are compared with other simplified approaches and experimental data from the literature. Grain boundary scattering is also considered via simple arguments.

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39

Colbrook, R., B. Holcroft, G. G. Roberts, M. E. C. Polywka, and S. G. Davies. "Pyroelectric organo-metallic langmuir-blodgett films." Ferroelectrics 92, no. 1 (April 1989): 381–86. http://dx.doi.org/10.1080/00150198908211363.

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40

Chen, S. F., P. I. Lin, J. Y. Juang, T. M. Uen, K. H. Wu, Y. S. Gou, and J. Y. Lin. "Metallic percolation in La0.67Ca0.33MnO3 thin films." Applied Physics Letters 82, no. 8 (February 24, 2003): 1242–44. http://dx.doi.org/10.1063/1.1554768.

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41

Zhang, X. G., and W. H. Butler. "Conductivity of metallic films and multilayers." Physical Review B 51, no. 15 (April 15, 1995): 10085–103. http://dx.doi.org/10.1103/physrevb.51.10085.

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42

Vannikov, Anatolii V., Antonina D. Grishina, and Marine G. Tedoradze. "Dry Photochemical Etching of Metallic Films." Mendeleev Communications 2, no. 2 (January 1992): 62–64. http://dx.doi.org/10.1070/mc1992v002n02abeh000135.

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43

Han, G. C., Y. H. Wu, P. Luo, J. J. Qiu, and T. C. Chong. "Dewetting observations of ultrathin metallic films." Solid State Communications 126, no. 8 (May 2003): 479–84. http://dx.doi.org/10.1016/s0038-1098(03)00182-0.

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