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Статті в журналах з теми "Metal-semiconductors Heterojunctions"
Choi, Byeonghoon, Dongwoo Shin, Hee-Seung Lee, and Hyunjoon Song. "Nanoparticle design and assembly for p-type metal oxide gas sensors." Nanoscale 14, no. 9 (2022): 3387–97. http://dx.doi.org/10.1039/d1nr07561f.
Повний текст джерелаSang, Xianhe, Yongfu Wang, Qinglin Wang, Liangrui Zou, Shunhao Ge, Yu Yao, Xueting Wang, Jianchao Fan, and Dandan Sang. "A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction." Molecules 28, no. 3 (January 30, 2023): 1334. http://dx.doi.org/10.3390/molecules28031334.
Повний текст джерелаSulas-Kern, Dana B., Elisa M. Miller, and Jeffrey L. Blackburn. "Photoinduced charge transfer in transition metal dichalcogenide heterojunctions – towards next generation energy technologies." Energy & Environmental Science 13, no. 9 (2020): 2684–740. http://dx.doi.org/10.1039/d0ee01370f.
Повний текст джерелаMa, Liang, Shuang Chen, Yun Shao, You-Long Chen, Mo-Xi Liu, Hai-Xia Li, Yi-Ling Mao, and Si-Jing Ding. "Recent Progress in Constructing Plasmonic Metal/Semiconductor Hetero-Nanostructures for Improved Photocatalysis." Catalysts 8, no. 12 (December 7, 2018): 634. http://dx.doi.org/10.3390/catal8120634.
Повний текст джерелаMun, Seong Jun, and Soo-Jin Park. "Graphitic Carbon Nitride Materials for Photocatalytic Hydrogen Production via Water Splitting: A Short Review." Catalysts 9, no. 10 (September 25, 2019): 805. http://dx.doi.org/10.3390/catal9100805.
Повний текст джерелаLiu, Yuanyue, Paul Stradins, and Su-Huai Wei. "Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier." Science Advances 2, no. 4 (April 2016): e1600069. http://dx.doi.org/10.1126/sciadv.1600069.
Повний текст джерелаBertho, Sabine, Wibren D. Oosterbaan, Veerle Vrindts, Jean Christophe Bolsée, Fortunato Piersimoni, Donato Spoltore, Jan D'Haen, Laurence Lutsen, Dirk Vanderzande, and Jean V. Manca. "Poly(3-alkylthiophene) Nanofibers for Photovoltaic Energy Conversion." Advanced Materials Research 324 (August 2011): 32–37. http://dx.doi.org/10.4028/www.scientific.net/amr.324.32.
Повний текст джерелаJanavicius, Lukas L., Julian A. Michaels, Clarence Chan, Dane J. Sievers, and Xiuling Li. "Programmable vapor-phase metal-assisted chemical etching for versatile high-aspect ratio silicon nanomanufacturing." Applied Physics Reviews 10, no. 1 (March 2023): 011409. http://dx.doi.org/10.1063/5.0132116.
Повний текст джерелаCao, Zhen, Moussab Harb, Sergey M. Kozlov, and Luigi Cavallo. "Structural and Electronic Effects at the Interface between Transition Metal Dichalcogenide Monolayers (MoS2, WSe2, and Their Lateral Heterojunctions) and Liquid Water." International Journal of Molecular Sciences 23, no. 19 (October 7, 2022): 11926. http://dx.doi.org/10.3390/ijms231911926.
Повний текст джерелаSong, Ze, Binbin Wei, Qilong Wang, Wenhui Wang, Zhangyu Cao, Li Zhang, Qingge Mu, et al. "High-performance metal electrode-enhanced double parallel p–n heterojunctions photodetector." Journal of Applied Physics 133, no. 12 (March 28, 2023): 124502. http://dx.doi.org/10.1063/5.0141523.
Повний текст джерелаДисертації з теми "Metal-semiconductors Heterojunctions"
Shelton, Bryan Stephen. "The simulation, processing, and characterization of AlGaN/GaN heterojunction transistors grown by metalorganic chemical vapor deposition /." Full text (PDF) from UMI/Dissertation Abstracts International, 2000. http://wwwlib.umi.com/cr/utexas/fullcit?p3004376.
Повний текст джерелаChinchani, Rameshwari. "Strained silicon/silicon-germanium heterostructure complimentary metal oxide semiconductor devices a simulation study of linearity /." Ohio : Ohio University, 2004. http://www.ohiolink.edu/etd/view.cgi?ohiou1176143999.
Повний текст джерелаAppaswamy, Aravind. "Operation of inverse mode SiGe HBTs and ultra-scaled CMOS devices in extreme environments." Diss., Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/33970.
Повний текст джерелаWilcox, Edward. "Silicon-germanium devices and circuits for cryogenic and high-radiation space environments." Thesis, Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/33850.
Повний текст джерелаWu, Zhenghui. "Impact of metal oxide/bulk-heterojunction interface on performance of organic solar cells." HKBU Institutional Repository, 2015. https://repository.hkbu.edu.hk/etd_oa/159.
Повний текст джерелаAhmed, Adnan. "Study of Low-Temperature Effects in Silicon-Germanium Heterojunction Bipolar Transistor Technology." Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7227.
Повний текст джерелаLourenco, Nelson Estacio. "An assessment of silicon-germanium BiCMOS technologies for extreme environment applications." Thesis, Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/45959.
Повний текст джерелаRosenbaum, Tommy. "Performance prediction of a future silicon-germanium heterojunction bipolar transistor technology using a heterogeneous set of simulation tools and approaches." Thesis, Bordeaux, 2017. http://www.theses.fr/2017BORD0550/document.
Повний текст джерелаBipolar complementary metal-oxide-semiconductor (BiCMOS) processescan be considered as the most general solution for RF products, as theycombine the mature manufacturing tools of CMOS with the speed and drivecapabilities of silicon-germanium (SiGe) heterojunction bipolar transistors(HBTs). HBTs in turn are major contenders for partially filling the terahertzgap, which describes the range in which the frequencies generated bytransistors and lasers do not overlap (approximately 0.3THz to 30 THz). Toevaluate the capabilities of such future devices, a reliable prediction methodologyis desirable. Using a heterogeneous set of simulation tools and approachesallows to achieve this goal successively and is beneficial for troubleshooting.Various scientific fields are combined, such as technology computer-aided design(TCAD), compact modeling and parameter extraction.To create a foundation for the simulation environment and to ensure reproducibility,the used material models of the hydrodynamic and drift-diffusionapproaches are introduced in the beginning of this thesis. The physical modelsare mainly based on literature data of Monte Carlo (MC) or deterministicsimulations of the Boltzmann transport equation (BTE). However, the TCADdeck must be calibrated on measurement data too for a reliable performanceprediction of HBTs. The corresponding calibration approach is based onmeasurements of an advanced SiGe HBT technology for which a technology specific parameter set of the HICUM/L2 compact model is extracted for thehigh-speed, medium-voltage and high-voltage transistor versions. With thehelp of the results, one-dimensional transistor characteristics are generatedthat serve as reference for the doping profile and model calibration. By performingelaborate comparisons between measurement-based reference dataand simulations, the thesis advances the state-of-the-art of TCAD-based predictionsand proofs the feasibility of the approach.Finally, the performance of a future technology in 28nm is predicted byapplying the heterogeneous methodology. On the basis of the TCAD results,bottlenecks of the technology are identified
Bipolare komplementäre Metall-Oxid-Halbleiter (BiCMOS) Prozesse bietenhervorragende Rahmenbedingungen um Hochfrequenzanwendungen zurealisieren, da sie die fortschrittliche Fertigungstechnik von CMOS mit derGeschwindigkeit und Treiberleistung von Silizium-Germanium (SiGe) Heterostruktur-Bipolartransistoren (HBTs) verknüpfen. Zudem sind HBTs bedeutendeWettbewerber für die teilweise Überbrückung der Terahertz-Lücke, derFrequenzbereich zwischen Transistoren (< 0.3 THz) und Lasern (> 30 THz).Um die Leistungsfähigkeit solcher zukünftigen Bauelemente zu bewerten, isteine zuverlässige Methodologie zur Vorhersage notwendig. Die Verwendungeiner heterogenen Zusammenstellung von Simulationstools und Lösungsansätzenerlaubt es dieses Ziel schrittweise zu erreichen und erleichtert die Fehler-_ndung. Verschiedene wissenschaftliche Bereiche werden kombiniert, wie zumBeispiel der rechnergestützte Entwurf für Technologie (TCAD), die Kompaktmodellierungund Parameterextraktion.Die verwendeten Modelle des hydrodynamischen Simulationsansatzes werdenzu Beginn der Arbeit vorgestellt, um die Simulationseinstellung zu erläuternund somit die Nachvollziehbarkeit für den Leser zu verbessern. Die physikalischenModelle basieren hauptsächlich auf Literaturdaten von Monte Carlo(MC) oder deterministischen Simulationen der Boltzmann-Transportgleichung(BTE). Für eine zuverlässige Vorhersage der Eigenschaften von HBTs muss dieTCAD Kon_guration jedoch zusätzlich auf der Grundlage von Messdaten kalibriertwerden. Der zugehörige Ansatz zur Kalibrierung beruht auf Messungeneiner fortschrittlichen SiGe HBT Technologie, für welche ein technologiespezifischer HICUM/L2 Parametersatz für die high-speed, medium-voltage undhigh-voltage Transistoren extrahiert wird. Mit diesen Ergebnissen werden eindimensionaleTransistorcharakteristiken generiert, die als Referenzdaten fürdie Kalibrierung von Dotierungspro_len und physikalischer Modelle genutztwerden. Der ausführliche Vergleich dieser Referenz- und Messdaten mit Simulationengeht über den Stand der Technik TCAD-basierender Vorhersagenhinaus und weist die Machbarkeit des heterogenen Ansatzes nach.Schlieÿlich wird die Leistungsfähigkeit einer zukünftigen Technologie in28nm unter Anwendung der heterogenen Methodik vorhergesagt. Anhand derTCAD Ergebnisse wird auf Engpässe der Technologie hingewiesen
Malefane, Mope Edwin. "Photocatalytic nanocomposites for degradation of organic pollutants in water under visible light." Diss., 2019. http://hdl.handle.net/10500/26888.
Повний текст джерелаCivil and Chemical Engineering
Balakrishnan, V. R. "Some Studies On Interface States In GaAs MESFET's & HJFET's." Thesis, 1997. https://etd.iisc.ac.in/handle/2005/2141.
Повний текст джерелаКниги з теми "Metal-semiconductors Heterojunctions"
Paul, Douglas J. Si/SiGe heterostructures in nanoelectronics. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.5.
Повний текст джерелаЧастини книг з теми "Metal-semiconductors Heterojunctions"
Mercy, J. M., C. Bousquet, A. Raymond, J. L. Robert, G. Gregoris, J. Beerens, J. C. Portal, and P. M. Frijlink. "Magnetic Field Induced Metal-Non Metal Transition in Ga .7Al .3As/GaAs Heterojunctions Under Hydrostatic Pressure." In Proceedings of the 17th International Conference on the Physics of Semiconductors, 1099–102. New York, NY: Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_248.
Повний текст джерелаТези доповідей конференцій з теми "Metal-semiconductors Heterojunctions"
Chung, C., and F. Jain. "Two-dimensional modal analysis of blue-green lasers using ZnSe based p-n and metal-insulator-semiconductor (MIS) heterostructures." In Compact Blue-Green Lasers. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/cbgl.1992.the4.
Повний текст джерела