Книги з теми "Metal oxide semiconductors"
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Nicollian, E. H. MOS (metal oxide semiconductor) physics and technology. Hoboken, N.J: Wiley-Interscience, 2003.
Sato, Norio. Electrochemistry at metal and semiconductor electrodes. Amsterdam: Elsevier, 1998.
Zhao, Yi. Wafer level reliability of advanced CMOS devices and processes. New York: Nova Science Publishers, 2008.
Lancaster, Don. CMOS cookbook. 2nd ed. Indianapolis, Ind: H.W. Sams, 1988.
Lancaster, Don. CMOS cookbook. 2nd ed. Boston: Newnes, 1997.
Pfaffli, Paul. Characterisation of degradation and failure phenomena in MOS devices. Konstanz [Germany]: Hartung-Gorre, 1999.
Shoji, Masakazu. CMOS digital circuit technology. Englewood Cliffs, N.J: Prentice Hall, 1988.
Segura, Jaume. CMOS electronics: How it works, how it fails. New York: IEEE Press, 2004.
Kwon, Min-jun. CMOS technology. Hauppauge, N.Y: Nova Science Publishers, 2010.
Helms, Harry L. High-speed (HC/HCT) CMOS guide. Englewood Cliffs, N.J: Prentice Hall, 1989.
Korec, Jacek. Low voltage power MOSFETs: Design, performance and applications. New York: Springer, 2011.
Paul, Reinhold. MOS-Feldeffekttransistoren. Berlin: Springer-Verlag, 1994.
T, Andre Noah, and Simon Lucas M, eds. MOSFETS: Properties, preparations to performance. New York: Nova Science Publishers, 2008.
Saijets, Jan. MOSFET RF characterization using bulk and SOI CMOS technologies. [Espoo, Finland]: VTT Technical Research Centre of Finland, 2007.
1951-, Walsh M. J., ed. Choosing and using CMOS. London: Collins, 1985.
(Firm), Signetics. High-speed CMOS data manual. Sunnyvale, Calif: Signetics Corp., 1988.
Symposum I, "Materials for End-of-Roadmap Scaling of CMOS Devices" (2010 San Francisco, Calif.). Materials and devices for end-of-roadmap and beyond CMOS scaling: Symposium held April 5-9, 2010, San Francisco, California. Edited by Ramanathan Shriram, Symposium J, "Materials and Devices for Beyond CMOS Scaling" (2010 : San Francisco, Calif.), and Materials Research Society. Warrendale, Pa: Materials Research Society, 2010.
Balestra, Francis. Innovative materials, modeling, and characterization for nanoscale CMOS. London, UK: ISTE, 2010.
(Firm), Signetics. High-speed CMOS data manual. Sunnyvale, Calif: Signetics Corp., 1988.
Prochnow, Dave. Experiments in CMOS technology. Blue Ridge Summit, PA: Tab Books, 1988.
G, Einspruch Norman, and Gildenblat Gennady Sh, eds. Advanced MOS device physics. San Diego: Academic Press, 1989.
1948-, Gautier Jacques, ed. Physics and operation of silicon devices in integrated circuits. London: ISTE, 2009.
Majkusiak, Bogdan. Bardzo cienki tlenek bramkowy w tranzystorze MOS--konsekwencje dla działania i modelowania. Warszawa: Wydawnictwa Politechniki Warszawskiej, 1991.
1948-, Gautier Jacques, ed. Physics and operation of silicon devices in integrated circuits. London: ISTE, 2009.
1948-, Gautier Jacques, ed. Physics and operation of silicon devices in integrated circuits. London: ISTE, 2009.
Susumu, Kohyama, ed. Very high speed MOS devices. Oxford: Clarendon Press, 1990.
Paul, Vande Voorde, and Hewlett-Packard Laboratories, eds. Extension of bandgap broadening model for quantum mechanical correction in sub-quarter micron MOS devices to accumulation layer. Palo Alto, CA: Hewlett-Packard Laboratories, Technical Publications Department, 1996.
Peluso, Vincenzo. Design of low-voltage low-power CMOS Delta-Sigma A/D converters. Boston: Kluwer Academic Publishers, 1999.
Rumak, N. V. Sistema kremniĭ--dvuokisʹ kremnii͡a︡ v MOP-strukturakh. Minsk: "Nauka i tekhnika", 1986.
P, Balk, ed. The Si-SiO₂ system. Amsterdam: Elsevier, 1988.
International, Symposium on Advanced Gate Stack Source/Drain and Channel Engineering for Si-based CMOS (2nd 2006 Cancún Mexico). Advanced gate stack, source/drain, and channel engineering for Si-based CMOS 2: New materials, processes and equipment. Pennington, NJ: Electrochemical Society, 2006.
Lai, Ivan Chee-Hong. Design and modeling of millimeter-wave CMOS circuits for wireless transceivers: Era of sub-100nm technology. Dordrecht: Springer Science+Business Media, 2008.
Savoj, Jafar. High-speed CMOS circuits for optical receivers. Boston: Kluwer Academic Publishers, 2001.
Ker, Morris. Transient-induced latchup in CMOS integrated circuits. Singapore: Wiley, 2009.
Ballan, Hussein. High voltage devices and circuits in standard CMOS technologies. Boston: Kluwer Academic, 1999.
Shoji, Masakazu. CMOS digital circuit technology. Englewood Cliffs, N.J: Prentice Hall, 1987.
Shoji, Masakazu. CMOS digital circuit technology. New Jersey: Prentice-Hall International, 1988.
Baker, R. Jacob. CMOS: Circuit design, layout, and simulation. 3rd ed. Piscataway, NJ: IEEE Press, 2010.
Amara, Amara, and Rozeau Olivier, eds. Planar double-gate transistor: From technology to circuit. [Dordrecht?]: Springer, 2009.
Symposium, MM "Transparent Conducting Oxides and Applications." Transparent conducting oxides and applications: Symposium held November 29-December 3 [2010], Boston, Massachusetts, U.S.A. Warrendale, Pa: Materials Research Society, 2012.
L, Helms Harry, ed. CMOS devices: 1987 source book. Englewood Cliffs, N.J: Technipubs, 1987.
Troutman, Ronald R. Latchup in CMOS technology: The problem and its cure. Boston: Kluwer Academic Publishers, 1986.
Kursun, Volkan. Multiple supply and threshold voltage CMOS circuits. Chichester, England: John Wiley, 2006.
Pearton, Stephen J., Chennupati Jagadish, and Bengt G. Svensson. Oxide Semiconductors. Elsevier Science & Technology Books, 2013.
Pearton, Stephen, Chennupati Jagadish, and Bengt G. Svensson. Oxide Semiconductors. Elsevier Science & Technology Books, 2013.
Zang, Z. Metal Oxide Semiconductors - Synthesis, Properties, and Devices. Wiley & Sons, Limited, John, 2023.
Grundmann, Marius, Anderson Janotti, Steve Durbin, and Tim Veal. Oxide Semiconductors: Volume 1633. Materials Research Society, 2014.
Zhuiykov, Serge. Nanostructured Semiconductors. Elsevier Science & Technology, 2018.
Zhuiykov, Serge. Nanostructured Semiconductors. Elsevier Science & Technology, 2018.
Sato, Norio. Electrochemistry at Metal and Semiconductor Electrodes. Elsevier Science & Technology Books, 1998.