Статті в журналах з теми "Metal oxide semiconductor field-effect transistors"
Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями
Ознайомтеся з топ-50 статей у журналах для дослідження на тему "Metal oxide semiconductor field-effect transistors".
Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.
Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.
Переглядайте статті в журналах для різних дисциплін та оформлюйте правильно вашу бібліографію.
Kumar, Prateek, Maneesha Gupta, Naveen Kumar, Marlon D. Cruz, Hemant Singh, Ishan, and Kartik Anand. "Performance Evaluation of Silicon-Transition Metal Dichalcogenides Heterostructure Based Steep Subthreshold Slope-Field Effect Transistor Using Non-Equilibrium Green’s Function." Sensor Letters 18, no. 6 (June 1, 2020): 468–76. http://dx.doi.org/10.1166/sl.2020.4236.
Anderson, Jackson, Yanbo He, Bichoy Bahr, and Dana Weinstein. "Integrated acoustic resonators in commercial fin field-effect transistor technology." Nature Electronics 5, no. 9 (September 23, 2022): 611–19. http://dx.doi.org/10.1038/s41928-022-00827-6.
Weng, Wu-Te, Yao-Jen Lee, Horng-Chih Lin, and Tiao-Yuan Huang. "Plasma-Induced Damage on the Reliability of Hf-Based High-k/Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology." International Journal of Plasma Science and Engineering 2009 (December 14, 2009): 1–10. http://dx.doi.org/10.1155/2009/308949.
John Chelliah, Cyril R. A., and Rajesh Swaminathan. "Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures." Nanotechnology Reviews 6, no. 6 (November 27, 2017): 613–23. http://dx.doi.org/10.1515/ntrev-2017-0155.
Ouyang, Zhuping, Wanxia Wang, Mingjiang Dai, Baicheng Zhang, Jianhong Gong, Mingchen Li, Lihao Qin, and Hui Sun. "Research Progress of p-Type Oxide Thin-Film Transistors." Materials 15, no. 14 (July 8, 2022): 4781. http://dx.doi.org/10.3390/ma15144781.
Choi, Woo Young, Jong Duk Lee, and Byung-Gook Park. "Integration Process of Impact-Ionization Metal–Oxide–Semiconductor Devices with Tunneling Field-Effect-Transistors and Metal–Oxide–Semiconductor Field-Effect Transistors." Japanese Journal of Applied Physics 46, no. 1 (January 10, 2007): 122–24. http://dx.doi.org/10.1143/jjap.46.122.
Bendada, E., K. Raïs, P. Mialhe, and J. P. Charles. "Surface Recombination Via Interface Defects in Field Effect Transistors." Active and Passive Electronic Components 21, no. 1 (1998): 61–71. http://dx.doi.org/10.1155/1998/91648.
Choi, Woo Young. "Comparative Study of Tunneling Field-Effect Transistors and Metal–Oxide–Semiconductor Field-Effect Transistors." Japanese Journal of Applied Physics 49, no. 4 (April 20, 2010): 04DJ12. http://dx.doi.org/10.1143/jjap.49.04dj12.
Diao Wenhao, 刁文豪, 江伟华 Jiang Weihua, and 王新新 Wang Xinxin. "Marx generator using metal-oxide-semiconductor field-effect transistors." High Power Laser and Particle Beams 22, no. 3 (2010): 565–68. http://dx.doi.org/10.3788/hplpb20102203.0565.
Irokawa, Y., Y. Nakano, M. Ishiko, T. Kachi, J. Kim, F. Ren, B. P. Gila, et al. "GaN enhancement mode metal-oxide semiconductor field effect transistors." physica status solidi (c) 2, no. 7 (May 2005): 2668–71. http://dx.doi.org/10.1002/pssc.200461280.
GILDENBLAT, G., and D. FOTY. "LOW TEMPERATURE MODELS OF METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS." International Journal of High Speed Electronics and Systems 06, no. 02 (June 1995): 317–73. http://dx.doi.org/10.1142/s0129156495000092.
Yang, Ji-Woon, Chang Seo Park, Casey E. Smith, Hemant Adhikari, Jeff Huang, Dawei Heh, Prashant Majhi, and Raj Jammy. "Mitigation of Complementary Metal–Oxide–Semiconductor Variability with Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors." Japanese Journal of Applied Physics 48, no. 4 (April 20, 2009): 04C056. http://dx.doi.org/10.1143/jjap.48.04c056.
Chang, Wen-Teng, Hsu-Jung Hsu, and Po-Heng Pao. "Vertical Field Emission Air-Channel Diodes and Transistors." Micromachines 10, no. 12 (December 6, 2019): 858. http://dx.doi.org/10.3390/mi10120858.
Marcoux, J., J. Orchard-Webb, and J. F. Currie. "Complementary metal oxide semiconductor-compatible junction field-effect transistor characterization." Canadian Journal of Physics 65, no. 8 (August 1, 1987): 982–86. http://dx.doi.org/10.1139/p87-156.
Атамуратова, З. А., А. Юсупов, Б. О. Халикбердиев та А. Э. Атамуратов. "Аномальное поведение боковой C-V-характеристики МНОП-транзистора со встроенным локальным зарядом в нитридном слое". Журнал технической физики 89, № 7 (2019): 1067. http://dx.doi.org/10.21883/jtf.2019.07.47801.319-18.
Dobrovolsky, V. N., and A. N. Krolevets. "Theory of magnetic-field-sensitive metal–oxide–semiconductor field-effect transistors." Journal of Applied Physics 85, no. 3 (February 1999): 1956–60. http://dx.doi.org/10.1063/1.369187.
Zhao, Jian H. "Silicon Carbide Power Field-Effect Transistors." MRS Bulletin 30, no. 4 (April 2005): 293–98. http://dx.doi.org/10.1557/mrs2005.76.
Yang, Ji-Woon, Chang Seo Park, Casey E. Smith, Hemant Adhikari, Jeff Huang, Dawei Heh, Prashant Majhi, and Raj Jammy. "Erratum: “Mitigation of Complementary Metal–Oxide–Semiconductor Variability with Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors”." Japanese Journal of Applied Physics 50, no. 11R (November 1, 2011): 119201. http://dx.doi.org/10.7567/jjap.50.119201.
Yang, Ji-Woon, Chang Seo Park, Casey E. Smith, Hemant Adhikari, Jeff Huang, Dawei Heh, Prashant Majhi, and Raj Jammy. "Erratum: “Mitigation of Complementary Metal–Oxide–Semiconductor Variability with Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors”." Japanese Journal of Applied Physics 50 (October 31, 2011): 119201. http://dx.doi.org/10.1143/jjap.50.119201.
Belford, R. E., B. P. Guo, Q. Xu, S. Sood, A. A. Thrift, A. Teren, A. Acosta, L. A. Bosworth, and J. S. Zell. "Strain enhanced p-type metal oxide semiconductor field effect transistors." Journal of Applied Physics 100, no. 6 (September 15, 2006): 064903. http://dx.doi.org/10.1063/1.2335678.
Lan, H. S., Y. T. Chen, William Hsu, H. C. Chang, J. Y. Lin, W. C. Chang, and C. W. Liu. "Electron scattering in Ge metal-oxide-semiconductor field-effect transistors." Applied Physics Letters 99, no. 11 (September 12, 2011): 112109. http://dx.doi.org/10.1063/1.3640237.
Kleinsasser, A. W., and T. N. Jackson. "Critical currents of superconducting metal-oxide-semiconductor field-effect transistors." Physical Review B 42, no. 13 (November 1, 1990): 8716–19. http://dx.doi.org/10.1103/physrevb.42.8716.
Surya, C., and T. Y. Hsiang. "Surface mobility fluctuations in metal-oxide-semiconductor field-effect transistors." Physical Review B 35, no. 12 (April 15, 1987): 6343–47. http://dx.doi.org/10.1103/physrevb.35.6343.
Huang, Feng-Jung, and K. K. O. "Metal-oxide semiconductor field-effect transistors using Schottky barrier drains." Electronics Letters 33, no. 15 (1997): 1341. http://dx.doi.org/10.1049/el:19970904.
Fiori, G., and G. Iannaccone. "Modeling of ballistic nanoscale metal-oxide-semiconductor field effect transistors." Applied Physics Letters 81, no. 19 (November 4, 2002): 3672–74. http://dx.doi.org/10.1063/1.1519349.
Rumyantsev, S. L., N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, G. Simin, X. Hu, and J. Yang. "Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors." Journal of Applied Physics 90, no. 1 (July 2001): 310–14. http://dx.doi.org/10.1063/1.1372364.
RUMYANTSEV, S. L., N. PALA, M. S. SHUR, M. E. LEVINSHTEIN, P. A. IVANOV, M. ASIF KHAN, G. SIMIN, et al. "LOW-FREQUENCY NOISE IN AlGaN/GaN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS AND METAL OXIDE SEMICONDUCTOR HETEROSTRUCTURE FIELD EFFECT TRANSISTORS." Fluctuation and Noise Letters 01, no. 04 (December 2001): L221—L226. http://dx.doi.org/10.1142/s0219477501000469.
Bennett, Brian R., Mario G. Ancona, and J. Brad Boos. "Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors." MRS Bulletin 34, no. 7 (July 2009): 530–36. http://dx.doi.org/10.1557/mrs2009.141.
Agha, Firas, Yasir Naif, and Mohammed Shakib. "Review of Nanosheet Transistors Technology." Tikrit Journal of Engineering Sciences 28, no. 1 (May 20, 2021): 40–48. http://dx.doi.org/10.25130/tjes.28.1.05.
Preisler, E. J., S. Guha, B. R. Perkins, D. Kazazis, and A. Zaslavsky. "Ultrathin epitaxial germanium on crystalline oxide metal-oxide-semiconductor-field-effect transistors." Applied Physics Letters 86, no. 22 (May 30, 2005): 223504. http://dx.doi.org/10.1063/1.1941451.
Yang, Jianan, John P. Denton, and Gerold W. Neudeck. "Edge transistor elimination in oxide trench isolated N-channel metal–oxide–semiconductor field effect transistors." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 19, no. 2 (2001): 327. http://dx.doi.org/10.1116/1.1358854.
Natori, Kenji. "Ballistic metal‐oxide‐semiconductor field effect transistor." Journal of Applied Physics 76, no. 8 (October 15, 1994): 4879–90. http://dx.doi.org/10.1063/1.357263.
Sun, Y., S. E. Thompson, and T. Nishida. "Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors." Journal of Applied Physics 101, no. 10 (May 15, 2007): 104503. http://dx.doi.org/10.1063/1.2730561.
Palma, Fabrizio. "Self-Mixing Model of Terahertz Rectification in a Metal Oxide Semiconductor Capacitance." Electronics 9, no. 3 (March 14, 2020): 479. http://dx.doi.org/10.3390/electronics9030479.
Kaneko, Kentaro, Yoshito Ito, Takayuki Uchida, and Shizuo Fujita. "Growth and metal–oxide–semiconductor field-effect transistors of corundum-structured alpha indium oxide semiconductors." Applied Physics Express 8, no. 9 (September 1, 2015): 095503. http://dx.doi.org/10.7567/apex.8.095503.
Ferain, Isabelle, Cynthia A. Colinge, and Jean-Pierre Colinge. "Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors." Nature 479, no. 7373 (November 2011): 310–16. http://dx.doi.org/10.1038/nature10676.
Toumazou, Christofer, Tan Sri Lim Kok Thay, and Pantelis Georgiou. "A new era of semiconductor genetics using ion-sensitive field-effect transistors: the gene-sensitive integrated cell." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 372, no. 2012 (March 28, 2014): 20130112. http://dx.doi.org/10.1098/rsta.2013.0112.
Koganemaru, Masaaki, Keisuke Yoshida, Naohiro Tada, Toru Ikeda, Noriyuki Miyazaki, and Hajime Tomokage. "OS20-3-1 Evaluation of uniaxial-stress effects on DC characteristics of n-type metal-oxide-semiconductor field-effect transistors." Abstracts of ATEM : International Conference on Advanced Technology in Experimental Mechanics : Asian Conference on Experimental Mechanics 2011.10 (2011): _OS20–3–1—. http://dx.doi.org/10.1299/jsmeatem.2011.10._os20-3-1-.
Maity, Heranmoy. "A New Approach to Design and Implementation of 2-Input XOR Gate Using 4-Transistor." Micro and Nanosystems 12, no. 3 (December 1, 2020): 240–42. http://dx.doi.org/10.2174/1876402912666200309120205.
Nakatsuka, Nako, Kyung-Ae Yang, John M. Abendroth, Kevin M. Cheung, Xiaobin Xu, Hongyan Yang, Chuanzhen Zhao, et al. "Aptamer–field-effect transistors overcome Debye length limitations for small-molecule sensing." Science 362, no. 6412 (September 6, 2018): 319–24. http://dx.doi.org/10.1126/science.aao6750.
Choi, J. Y., P. K. Ko, and C. Hu. "Effect of oxide field on hot‐carrier‐induced degradation of metal‐oxide‐semiconductor field‐effect transistors." Applied Physics Letters 50, no. 17 (April 27, 1987): 1188–90. http://dx.doi.org/10.1063/1.97906.
Haugerud, B. M., L. A. Bosworth, and R. E. Belford. "Mechanically induced strain enhancement of metal–oxide–semiconductor field effect transistors." Journal of Applied Physics 94, no. 6 (September 15, 2003): 4102–7. http://dx.doi.org/10.1063/1.1602562.
Chen, Qiang, and James D. Meindl. "Nanoscale metal–oxide–semiconductor field-effect transistors: scaling limits and opportunities." Nanotechnology 15, no. 10 (July 24, 2004): S549—S555. http://dx.doi.org/10.1088/0957-4484/15/10/009.
Gaubert, Philippe, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi. "Hole Mobility in Accumulation Mode Metal–Oxide–Semiconductor Field-Effect Transistors." Japanese Journal of Applied Physics 51, no. 4S (April 1, 2012): 04DC07. http://dx.doi.org/10.7567/jjap.51.04dc07.
Irokawa, Y., Y. Nakano, M. Ishiko, T. Kachi, J. Kim, F. Ren, B. P. Gila, et al. "MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors." Applied Physics Letters 84, no. 15 (April 12, 2004): 2919–21. http://dx.doi.org/10.1063/1.1704876.
Omura, Yasuhisa. "Hooge parameter in buried-channel metal-oxide-semiconductor field-effect transistors." Journal of Applied Physics 91, no. 3 (February 2002): 1378–84. http://dx.doi.org/10.1063/1.1434543.
Navid, Reza, Christoph Jungemann, Thomas H. Lee, and Robert W. Dutton. "High-frequency noise in nanoscale metal oxide semiconductor field effect transistors." Journal of Applied Physics 101, no. 12 (June 15, 2007): 124501. http://dx.doi.org/10.1063/1.2740345.
Gaubert, Philippe, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi. "Hole Mobility in Accumulation Mode Metal–Oxide–Semiconductor Field-Effect Transistors." Japanese Journal of Applied Physics 51 (April 20, 2012): 04DC07. http://dx.doi.org/10.1143/jjap.51.04dc07.
Shi, Xuejie, and Man Wong. "On the threshold voltage of metal–oxide–semiconductor field-effect transistors." Solid-State Electronics 49, no. 7 (July 2005): 1179–84. http://dx.doi.org/10.1016/j.sse.2005.04.010.
Kim, Sang Hyeon, Dae-Myeong Geum, Min-Su Park, and Won Jun Choi. "In0.53Ga0.47As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Utilizing Y2O3 Buried Oxide." IEEE Electron Device Letters 36, no. 5 (May 2015): 451–53. http://dx.doi.org/10.1109/led.2015.2417872.