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Статті в журналах з теми "Metal chemical etching"

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Автор: Grafiati

Опубліковано: 30 травня 2022

Оновлено: 31 травня 2022

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1

Kim, D. E., and N. P. Suh. "Chemical Smoothing of Rough Metal Surfaces." Journal of Engineering for Industry 114, no. 4 (November 1, 1992): 421–26. http://dx.doi.org/10.1115/1.2900693.

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A chemical etching method is investigated as a possible approach to smoothing metal surfaces automatically. In a chemical etching process metal is removed due to chemical reaction and the dissolved species are transported away from the surface mainly by diffusion. Controlled dynamics introduced to the etchant motion provide the conditions necessary to perform preferential material removal such that an irregular surface is smoothed. A simplified model for the smoothing process based on fundamental mass transfer understandings is presented. Experimental results of smoothing electric discharge machined 440 stainless steel specimens are also presented. This work is motivated by the need to develop a cost effective way to manufacture molds during secondary processing.

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2

Wang, Qi, Kehong Zhou, Shuai Zhao, Wen Yang, Hongsheng Zhang, Wensheng Yan, Yi Huang, and Guodong Yuan. "Metal-Assisted Chemical Etching for Anisotropic Deep Trenching of GaN Array." Nanomaterials 11, no. 12 (November 24, 2021): 3179. http://dx.doi.org/10.3390/nano11123179.

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Realizing the anisotropic deep trenching of GaN without surface damage is essential for the fabrication of GaN-based devices. However, traditional dry etching technologies introduce irreversible damage to GaN and degrade the performance of the device. In this paper, we demonstrate a damage-free, rapid metal-assisted chemical etching (MacEtch) method and perform an anisotropic, deep trenching of a GaN array. Regular GaN microarrays are fabricated based on the proposed method, in which CuSO4 and HF are adopted as etchants while ultraviolet light and Ni/Ag mask are applied to catalyze the etching process of GaN, reaching an etching rate of 100 nm/min. We comprehensively explore the etching mechanism by adopting three different patterns, comparing a Ni/Ag mask with a SiN mask, and adjusting the etchant proportion. Under the catalytic role of Ni/Ag, the GaN etching rate nearby the metal mask is much faster than that of other parts, which contributes to the formation of deep trenches. Furthermore, an optimized etchant is studied to restrain the disorder accumulation of excessive Cu particles and guarantee a continuous etching result. Notably, our work presents a novel low-cost MacEtch method to achieve GaN deep etching at room temperature, which may promote the evolution of GaN-based device fabrication.

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3

Li, Liyi, Colin M. Holmes, Jinho Hah, Owen J. Hildreth, and Ching P. Wong. "Uniform Metal-assisted Chemical Etching and the Stability of Catalysts." MRS Proceedings 1801 (2015): 1–8. http://dx.doi.org/10.1557/opl.2015.574.

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ABSTRACTRecently, metal-assisted chemical etching (MaCE) has been demonstrated as a promising technology in fabrication of uniform high-aspect-ratio (HAR) micro- and nanostructures on silicon substrates. In this work, MaCE experiments on 2 μm-wide line patterns were conducted using Au or Ag as catalysts. The performance of the two catalysts show sharp contrast. In MaCE with Au, a HAR trench was formed with uniform geometry and vertical sidewall. In MaCE with Ag, shallow and tapered etching profiles were observed, which resembled the results from isotropic etching. The sidewall tapering phenomena can be explained by the dissolution and re-deposition of the Ag catalyst in the etchant solution. The existence of Ag that was redeposited on the sidewall was further confirmed by energy dispersive spectrum. Also, etchant composition is found to play a profound role in influencing the etching profile by the Ag catalysts.

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4

Dai, Li Ping, Guo Jun Zhang, Shu Ya Wang, and Zhi Qin Zhong. "XPS Study on Barium Strontium Titanate (BST) Thin Films Etching in SF₆/Ar Plasma." Advanced Materials Research 415-417 (December 2011): 1964–68. http://dx.doi.org/10.4028/www.scientific.net/amr.415-417.1964.

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Анотація:

Subscript textReactive ion etching of barium strontium titanate (BST) thin films using an SF6/Ar plasma has been studied. BST surfaces before and after etching were analyzed by X-ray photoelectron spectroscopy to investigate the reaction ion etching mechanism, and chemical reactions had occurred between the F plasma and the Ba, Sr and Ti metal species. Fluorides of these metals were formed and some remained on the surface during the etching process. Ti can be removed completely by chemical reaction because the TiF4by-product is volatile. Minor quantities of Ti-F could still be detected by narrow scan X-ray photoelectron spectra, which was thought to be present in metal-oxy-fluoride(Metal-O-F). These species were investigated from O1sspectra, and a fluoride-rich surface was formed during etching because the high boiling point BaF2and SrF2residues are hard to remove. The etching rate was limited to 14.28nm/min. A 1-minute Ar/10 plasma physical sputtering was carried out for every 4 minutes of surface etching, which effectively removed remaining surface residue. Sequential chemical reaction and sputtered etching is an effective etching method for BST films.

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5

Choi, Keorock, Yunwon Song, Ilwhan Oh, and Jungwoo Oh. "Catalyst feature independent metal-assisted chemical etching of silicon." RSC Advances 5, no. 93 (2015): 76128–32. http://dx.doi.org/10.1039/c5ra15745e.

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6

Lee, Hun Hee, Min Sang Yun, Hyun Wook Lee, and Jin Goo Park. "Removing W Polymer Residue from BEOL Structures Using DSP⁺ (Dilute Sulfuric-Peroxide-HF) Mixture – A Case Study." Solid State Phenomena 195 (December 2012): 128–31. http://dx.doi.org/10.4028/www.scientific.net/ssp.195.128.

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As the feature size of semiconductor device shrinks continuously, various high-K metals for 3-D structures have been applied to improve the device performance, such as high speed and low power consumption. Metal gate fabrication requires the removal of metal and polymer residues after etching process without causing any undesired etching and corrosion of metals. The conventional sulfuric-peroxide mixture (SPM) has many disadvantages like the corrosion of metals, environmental issues etc., DSP+(dilute sulfuric-peroxide-HF mixture) chemical is currently used for the removal of post etch residues on device surface, to replace the conventional SPM cleaning [. Due to the increased usage of metal gate in devices in recent times, the application of DSP+chemicals for cleaning processes also increases [.

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7

Tice, Scott, and Chan Geun Park. "Metal Etch in Advanced Immersion Tank with Precision Uniformity Using Agitation and Wafer Rotation." Solid State Phenomena 219 (September 2014): 138–42. http://dx.doi.org/10.4028/www.scientific.net/ssp.219.138.

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Анотація:

In semiconductor wafer fabrication, etching refers to the process of removing unwanted material from wafer surface through a subtractive process. Metal etching is most commonly used in the patterning of metal films for interconnects by establishing specific connection and conduction paths and can be classified by dry etching, de-plating and dissolution of the layers on various substrates such as silicon, SiO2, Si3N4, GaAs, germanium, and sapphire. Dry etching is used to produce very precise etching of vertical channels or vias forming the device features or lines which make up the conductive path because it is anisotropic or etching in one direction. Dry etching is achieved by using chemical gases and plasma in a process chamber so dry etching tools are very large, complex and expensive to purchase and operate. De-plating is a process of electro-chemically removing metal material from the surface of the wafer to an anode by creating a difference in electrical potential between the surface to be etched/de-plated (typically cathode) and the “target” or anode where the material is to be collected. De-plating in single wafer tools has also replaced immersion processing due to the better uniformity it provides. However, De-plating single wafer tools are also very large and expensive to operate and have low throughput (wafers per hour). Dissolution/Immersion is the used of recirculated chemical baths to perform the etching process. In an immersion bath chemical is used to dissolve the metal layer that is unprotected by the mask. Immersion metal etch process has been on the decline because of its isotropic etching property and poor etch uniformity caused by non-uniform chemical flow around wafers in the tank. For the most of etch processes lateral etching is undesired because it occurs on the walls of the features and makes them thinner or misshapen. As a result, most of critical etching steps are performed by dry etching systems. However, if etch uniformity is precise, immersion etching can be used for less critical features in place of complex dry etching and de-plating.

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8

Kim, Wungyeon, Hyunjeong Kim, and Gyu Tae Kim. "Ultra-Easy and Fast Method for Transferring Graphene Grown on Metal Foil." Nano 12, no. 11 (November 2017): 1750140. http://dx.doi.org/10.1142/s1793292017501405.

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Growing graphene on a large scale is the first step towards its industrial application. The most widely used large-scale graphene growth method is chemical vapor deposition (CVD) on metal foil. Transferring large-scale graphene without damaging it or degrading its performance is also very important. Generally, techniques for transferring CVD-grown graphene involve metal-foil etching. In this case, the metal etchant can chemically alter the graphene and small amounts of metal residue still remain after etching. These metal residues change the properties of the transferred graphene. In this paper, we demonstrate a new technique for transferring CVD-grown graphene films onto arbitrary substrates using Crystalbond, an off-the-shelf adhesive material. This new method is very simple, easy, and fast. It also solves the aforementioned problems associated with metal etching, by using mechanical exfoliation of graphene via the high adhesive strength of Crystalbond. We transferred a [Formula: see text]1[Formula: see text]cm size piece of graphene, which exhibited reasonable optical and electrical properties, as observed using Raman spectroscopy and field effect transistor (FET) measurements, respectively.

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9

Lova, Paola, Valentina Robbiano, Franco Cacialli, Davide Comoretto, and Cesare Soci. "Black GaAs by Metal-Assisted Chemical Etching." ACS Applied Materials & Interfaces 10, no. 39 (September 7, 2018): 33434–40. http://dx.doi.org/10.1021/acsami.8b10370.

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10

Pérez-Díaz, Oscar, and Enrique Quiroga-González. "Silicon Conical Structures by Metal Assisted Chemical Etching." Micromachines 11, no. 4 (April 11, 2020): 402. http://dx.doi.org/10.3390/mi11040402.

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Анотація:

A simple and inexpensive method to obtain Si conical structures is proposed. The method consists of a sequence of steps that include photolithography and metal assisted chemical etching (MACE) to create porous regions that are dissolved in a post-etching process. The proposed process takes advantage of the lateral etching obtained when using catalyst particles smaller than 40 nm for MACE. The final shape of the base of the structures is mainly given by the shape of the lithography mask used for the process. Conical structures ranging from units to hundreds of microns can be produced by this method. The advantage of the method is its simplicity, allowing the production of the structures in a basic chemical lab.

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11

Akan, Rabia, and Ulrich Vogt. "Optimization of Metal-Assisted Chemical Etching for Deep Silicon Nanostructures." Nanomaterials 11, no. 11 (October 22, 2021): 2806. http://dx.doi.org/10.3390/nano11112806.

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Анотація:

High-aspect ratio silicon (Si) nanostructures are important for many applications. Metal-assisted chemical etching (MACE) is a wet-chemical method used for the fabrication of nanostructured Si. Two main challenges exist with etching Si structures in the nanometer range with MACE: keeping mechanical stability at high aspect ratios and maintaining a vertical etching profile. In this work, we investigated the etching behavior of two zone plate catalyst designs in a systematic manner at four different MACE conditions as a function of mechanical stability and etching verticality. The zone plate catalyst designs served as models for Si nanostructures over a wide range of feature sizes ranging from 850 nm to 30 nm at 1:1 line-to-space ratio. The first design was a grid-like, interconnected catalyst (brick wall) and the second design was a hybrid catalyst that was partly isolated, partly interconnected (fishbone). Results showed that the brick wall design was mechanically stable up to an aspect ratio of 30:1 with vertical Si structures at most investigated conditions. The fishbone design showed higher mechanical stability thanks to the Si backbone in the design, but on the other hand required careful control of the reaction kinetics for etching verticality. The influence of MACE reaction kinetics was identified by lowering the oxidant concentration, lowering the processing temperature and by isopropanol addition. We report an optimized MACE condition to achieve an aspect ratio of at least 100:1 at room temperature processing by incorporating isopropanol in the etching solution.

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12

Li, Yu Ping, Xiu Hua Chen, Wen Hui Ma, Shao Yuan Li, Ping Bi, Xue Mei Liu, and Fu Wei Xiang. "Research on Preparation of Porous Silicon Powders from Metallurgical Silicon Material." Materials Science Forum 847 (March 2016): 97–102. http://dx.doi.org/10.4028/www.scientific.net/msf.847.97.

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Stain etching, one step metal assisted chemical etching (1-MACE) and two-step metal assisted chemical etching (2-MACE) were used for preparing porous silicon powders (PSPs) based on metallurgical silicon powder. The influences of different oxidants species and concentrations on the structure of PSP were discussed. The results indicated that the different oxidant species has an important effect on the morphology and structure of PSP. In stain etching, there is still a challenge for fabricating PSP with uniform and controlled pore size structure. In contrast, metal-assisted chemical etching method is easier to prepare PSPs sample with uniform depth and pore size than stain etching, In 1-MACE, the growth rate of the PSPs pore was between 0.05 and 0.10 μm/min, which is far less than that of 2-MACE (about 0.2~0.5 μm/min). Furthermore, 2-MACE showed more advantages than stain etching and 1-MACE in controlling of pore size range and structure.

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13

Iatsunskyi, Igor, Valentin Smyntyna, Nykolai Pavlenko, and Olga Sviridova. "Peculiarities of Photoluminescence in Porous Silicon Prepared by Metal-Assisted Chemical Etching." ISRN Optics 2012 (November 1, 2012): 1–6. http://dx.doi.org/10.5402/2012/958412.

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Photoluminescent (PL) porous layers were formed on p-type silicon by a metal-assisted chemical etching method using H2O2 as an oxidizing agent. Silver particles were deposited on the (100) Si surface prior to immersion in a solution of HF and H2O2. The morphology of the porous silicon (PS) layer formed by this method was investigated by atomic force microscopy (AFM). Depending on the metal-assisted chemical etching conditions, the macro- or microporous structures could be formed. Luminescence from metal-assisted chemically etched layers was measured. It was found that the PL intensity increases with increasing etching time. This behaviour is attributed to increase of the density of the silicon nanostructure. It was found the shift of PL peak to a green region with increasing of deposition time can be attributed to the change in porous morphology. Finally, the PL spectra of samples formed by high concentrated solution of AgNO3 showed two narrow peaks of emission at 520 and 550 nm. These peaks can be attributed to formation of AgF and AgF2 on a silicon surface.

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14

Lianto, Prayudi, Sihang Yu, Jiaxin Wu, C. V. Thompson, and W. K. Choi. "Vertical etching with isolated catalysts in metal-assisted chemical etching of silicon." Nanoscale 4, no. 23 (2012): 7532. http://dx.doi.org/10.1039/c2nr32350h.

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15

Hampden-Smith, Mark J., and Toivo T. Kodas. "Copper Etching: New Chemical Approaches." MRS Bulletin 18, no. 6 (June 1993): 39–45. http://dx.doi.org/10.1557/s088376940004731x.

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Анотація:

There is a tremendous demand for improved performance and speed in consumer electronics that is likely to continue as new applications and developments occur. This demand necessitates a reduction in the critical dimensions and an increase in the density of devices in microelectronic circuits. As a result, new materials must be considered for integration into microelectronics technology. In particular, the metal wiring or interconnects that connect different components in silicon-based semiconductor devices is a subject of great interest. As the dimensions of transistors shrink below the 0.5 μm level, their speed will become limited by the delays in the existing interconnect material, Al-Si-Cu alloy (p ~ 3 μΩ cm). Therefore, to avoid problems associated with RC (“resistance/capacitance”) time delays and voltage drops, it will be necessary to construct interconnections of materials that possess lower resistivities, resistance to electromigration and hillock formation, and resistance to diffusion into other materials (see Table I).A number of materials are possible candidates to replace the Al-Si-Cu alloy, including W, Ag, Au, and Cu. Tungsten has excellent resistance to electromigration and hillock formation, but has higher resistivity compared with the Al-Si-Cu alloy. Thus, applications of W are likely to be found where short interconnection distances are necessary. Silver has the lowest resistivity of all metals, but is easily corroded and diffuses rapidly into many materials used in semiconductor devices. However, some specific applications for silver are viable, such as the formation of contacts on ceramic superconductors. Gold has a lower resistivity than the Al-Si-Cu alloy and is inert to chemical corrosion. As a result Au is used where device reliability is the primary concern-for example, for wiring in GaAs-based semiconductors and electrical contacts in packaging.

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16

Berezhanskyi, Ye I., S. I. Nichkalo, V. Yu Yerokhov, and A. A. Druzhynin. "Nanotexturing of Silicon by Metal-Assisted Chemical Etching." Фізика і хімія твердого тіла 16, no. 1 (March 15, 2015): 140–44. http://dx.doi.org/10.15330/pcss.16.1.140-144.

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This paper describes the method of metal assisted chemical etching (MacEtch) as an efficient approach for structuring the silicon surface with the ability to manage effectively the geometric parameters of the structures and their distribution on the surface of substrate. The surface texturing technology was presented and the structured silicon surfaces with regular and irregular types of surfaces have been obtained. This technology can be used for nanotexturing of the surface of silicon photovoltaic converters. The model of photovoltaic converter based on the crater-textured silicon surface with high efficiency was presented.

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17

Yasukawa, Yukiko, Hidetaka Asoh, and Sachiko Ono. "GaAs Microarrays by Noble-Metal Assisted Chemical Etching." ECS Transactions 16, no. 3 (December 18, 2019): 253–58. http://dx.doi.org/10.1149/1.2982563.

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18

Huang, Zhipeng, Nadine Geyer, Peter Werner, Johannes de Boor, and Ulrich Goesele. "ChemInform Abstract: Metal-Assisted Chemical Etching of Silicon." ChemInform 42, no. 14 (March 14, 2011): no. http://dx.doi.org/10.1002/chin.201114223.

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19

Huang, Zhipeng, Nadine Geyer, Peter Werner, Johannes de Boor, and Ulrich Gösele. "Metal-Assisted Chemical Etching of Silicon: A Review." Advanced Materials 23, no. 2 (September 21, 2010): 285–308. http://dx.doi.org/10.1002/adma.201001784.

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20

Lipinski, M., J. Cichoszewski, R. P. Socha, and T. Piotrowski. "Porous Silicon Formation by Metal-Assisted Chemical Etching." Acta Physica Polonica A 116, Supplement (December 2009): S—117—S—119. http://dx.doi.org/10.12693/aphyspola.116.s-117.

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21

Hildreth, Owen J., and Daniel R. Schmidt. "Vapor Phase Metal-Assisted Chemical Etching of Silicon." Advanced Functional Materials 24, no. 24 (March 14, 2014): 3827–33. http://dx.doi.org/10.1002/adfm.201304129.

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22

Romano, Lucia. "Editorial for the Special Issue on Micro- and Nano-Fabrication by Metal Assisted Chemical Etching." Micromachines 11, no. 11 (October 31, 2020): 988. http://dx.doi.org/10.3390/mi11110988.

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23

Yoon, Sung-Soo, Yeong Bahl Lee, and Dahl-Young Khang. "Etchant wettability in bulk micromachining of Si by metal-assisted chemical etching." Applied Surface Science 370 (May 2016): 117–25. http://dx.doi.org/10.1016/j.apsusc.2016.02.153.

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24

Lai, Chang Quan, Wen Zheng, W. K. Choi, and Carl V. Thompson. "Metal assisted anodic etching of silicon." Nanoscale 7, no. 25 (2015): 11123–34. http://dx.doi.org/10.1039/c5nr01916h.

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Анотація:

Metal assisted anodic etching (MAAE) of Si was studied to compare the effects of hole generation at Au/Si interfaces and electrolyte/Si interfaces, and investigate the effects that electronic and chemical processes have on the nanostructures formed.

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25

Arafat, Mohammad Yasir, Mohammad Aminul Islam, Ahmad Wafi Bin Mahmood, Fairuz Abdullah, Mohammad Nur-E-Alam, Tiong Sieh Kiong, and Nowshad Amin. "Fabrication of Black Silicon via Metal-Assisted Chemical Etching—A Review." Sustainability 13, no. 19 (September 28, 2021): 10766. http://dx.doi.org/10.3390/su131910766.

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The metal-assisted chemical etching (MACE) technique is commonly employed for texturing the wafer surfaces when fabricating black silicon (BSi) solar cells and is considered to be a potential technique to improve the efficiency of traditional Si-based solar cells. This article aims to review the MACE technique along with its mechanism for Ag-, Cu- and Ni-assisted etching. Primarily, several essential aspects of the fabrication of BSi are discussed, including chemical reaction, etching direction, mass transfer, and the overall etching process of the MACE method. Thereafter, three metal catalysts (Ag, Cu, and Ni) are critically analyzed to identify their roles in producing cost-effective and sustainable BSi solar cells with higher quality and efficiency. The conducted study revealed that Ag-etched BSi wafers are more suitable for the growth of higher quality and efficiency Si solar cells compared to Cu- and Ni-etched BSi wafers. However, both Cu and Ni seem to be more cost-effective and more appropriate for the mass production of BSi solar cells than Ag-etched wafers. Meanwhile, the Ni-assisted chemical etching process takes a longer time than Cu but the Ni-etched BSi solar cells possess enhanced light absorption capacity and lower activity in terms of the dissolution and oxidation process than Cu-etched BSi solar cells.

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26

Cao, Dao Tran, Cao Tuan Anh, and Luong Truc Quynh Ngan. "Vertical-Aligned Silicon Nanowire Arrays with Strong Photoluminescence Fabricated by Metal-Assisted Electrochemical Etching." Journal of Nanoelectronics and Optoelectronics 15, no. 1 (January 1, 2020): 127–35. http://dx.doi.org/10.1166/jno.2020.2684.

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Анотація:

Metal-assisted chemical etching of silicon is a commonly used method to fabricate vertical aligned silicon nanowire arrays. In this report we show that if in the above method the chemical etching is replaced by the electrochemical one, we can also produce silicon nanowire arrays, but with a special characteristic-extremely strong photoluminescence. Further research showed that the huge photoluminescence intensity of the silicon nanowire arrays made by metal-assisted electrochemical etching is related to the anodic oxidation of the silicon nanowires which has occurred during the electrochemical etching. It is most likely that the luminescence of the silicon nanowire arrays made with metal-assisted electrochemical etching is the luminescence of silicon nanocrystallites (located on the surface of silicon nanowire fibers) embedded in a silicon oxide matrix, similar to that in a silicon rich oxide system.

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27

Wang, Wei, Li Juan Zhao, Ping Xin Song, and Ying Jiu Zhang. "Etching Volume Effect on the Morphology of Silicon Etched by Metal-Assisted Chemical Method." Applied Mechanics and Materials 217-219 (November 2012): 1141–45. http://dx.doi.org/10.4028/www.scientific.net/amm.217-219.1141.

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Assisted by Ag nanoparticles, Si substrates were etched in aqueous solutions containing hydroﬂuoric acid (HF) and hydrogen peroxide (H2O2) with different volumes of etching solution. The etching morphology of Si wafers was found to be affected by the volumes. In etching solutions with smaller volume, the pores were created; in etching solutions with larger volume, the nanostructure composed of nanowires and nanopores (pores+wires nanostructure) were generated. In addition, the lengths of these Si nanostructures increased with the increase of the etching volume. Possible formation mechanism for this phenomenon was discussed.

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28

Du, Fengming, Chengdi Li, Zetian Mi, Ruoxuan Huang, Xiaoguang Han, Yan Shen, and Jiujun Xu. "Friction Performance of Aluminum-Silicon Alloy Cylinder Liner after Chemical Etching and Laser Finishing." Metals 9, no. 4 (April 11, 2019): 431. http://dx.doi.org/10.3390/met9040431.

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In order to enhance the surface friction performance of the aluminum-silicon (Al-Si) alloy cylinder liner, chemical etching and laser finishing techniques are applied to improve the friction performance. The cylinder liner samples are worn against a Cr-Al2O3 coated piston ring by a reciprocating sliding tribotester. The friction coefficient and weight loss are measured to determine the friction performance; a stress contact model is developed to ascertain the wear mechanism. The results show that the optimal etching time is 2 min for the chemical etching treatment and the optimal laser power is 1000 W for the laser finishing treatment. The chemical etching removes the surface aluminum layer and exposes the silicon on the surface, thereby avoiding metal-to-metal contact. The laser finishing results in the protrusion and rounded edges of the silicon particles, which decreases the stress concentration. The laser finishing results in better friction performance of aluminum-silicon alloy cylinder liner than the chemical etching.

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29

Lin, Hao, Ming Fang, Ho-Yuen Cheung, Fei Xiu, SenPo Yip, Chun-Yuen Wong, and Johnny C. Ho. "Hierarchical silicon nanostructured arrays via metal-assisted chemical etching." RSC Adv. 4, no. 91 (2014): 50081–85. http://dx.doi.org/10.1039/c4ra06172a.

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Hierarchically configured nanostructures, such as nanograss and nanowalls, have been fabricatedviaa low-cost approach that combines metal-assisted chemical etching (MaCE), nanosphere lithography and conventional photolithography.

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30

Hu, Ya, Chensheng Jin, Ying Liu, Xiaoyu Yang, Zhiyuan Liao, Baoguo Zhang, Yilai Zhou, et al. "Metal Particle Evolution Behavior during Metal Assisted Chemical Etching of Silicon." ECS Journal of Solid State Science and Technology 10, no. 8 (August 1, 2021): 084002. http://dx.doi.org/10.1149/2162-8777/ac17be.

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31

Xia, Weiwei, Jun Zhu, Haibo Wang, and Xianghua Zeng. "Effect of catalyst shape on etching orientation in metal-assisted chemical etching of silicon." CrystEngComm 16, no. 20 (2014): 4289–97. http://dx.doi.org/10.1039/c4ce00006d.

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32

Zhang, Shiying, Zhenhua Li, and Qingjun Xu. "A systematic study of silicon nanowires array fabricated through metal-assisted chemical etching." European Physical Journal Applied Physics 92, no. 3 (December 2020): 30402. http://dx.doi.org/10.1051/epjap/2020200289.

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Анотація:

Aligned and uniform silicon nanowires (SiNWs) arrays were fabricated with good controllability and reproducibility by metal-assisted chemical etching in aqueous AgNO3/HF etching solutions in atmosphere. The SiNWs formed on silicon were characterized by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), high-resolution transmission electron microscopy (HRTEM) and selected-area electron diffraction (SAED). The results show that the as-prepared SiNWs are perfectly single crystals and the axial orientation of the Si nanowires is identified to be parallel to the [111] direction, which is identical to the initial silicon wafer. In addition, a series of experiments were conducted to study the effects of etching conditions such as solution concentration, etching time, and etching temperature on SiNWs. And the optimal solution concentrations for SiNWs have been identified. The formation mechanism of silicon nanowires and silver dendrites were also discussed.

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33

Kim, Tae, Jee-Hwan Bae, Juyoung Kim, Min Cho, Yu-Chan Kim, Sungho Jin, and Dongwon Chun. "Curved Structure of Si by Improving Etching Direction Controllability in Magnetically Guided Metal-Assisted Chemical Etching." Micromachines 11, no. 8 (July 30, 2020): 744. http://dx.doi.org/10.3390/mi11080744.

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Metal-assisted chemical etching (MACE) is widely used to fabricate micro-/nano-structured Si owing to its simplicity and cost-effectiveness. The technique of magnetically guided MACE, involving MACE with a tri-layer metal catalyst, was developed to improve etching speed as well as to adjust the etching direction using an external magnetic field. However, the controllability of the etching direction diminishes with an increase in the etching dimension, owing to the corrosion of Fe due to the etching solution; this impedes the wider application of this approach for the fabrication of complex micro Si structures. In this study, we modified a tri-layer metal catalyst (Au/Fe/Au), wherein the Fe layer was encapsulated to improve direction controllability; this improved controllability was achieved by protecting Fe against the corrosion caused by the etching solution. We demonstrated curved Si microgroove arrays via magnetically guided MACE with Fe encapsulated in the tri-layer catalyst. Furthermore, the curvature in the curved Si microarrays could be modulated via an external magnetic field, indicating that direction controllability could be maintained even for the magnetically guided MACE of bulk Si. The proposed fabrication method developed for producing curved Si microgroove arrays can be applied to electronic devices and micro-electromechanical systems.

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34

Cui, Naiyuan, Fei Wang, Hanyuan Ding, and Lei Guo. "Investigation of 〈100〉-oriented etching pattern on diamond coated with Ni and Cu." International Journal of Modern Physics B 34, no. 17 (June 29, 2020): 2050155. http://dx.doi.org/10.1142/s0217979220501556.

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Diamond etching of [Formula: see text] orientation is processed in chemical vapor deposition (CVD) chamber using H2 as reactive gas. Etching process happens on diamond substrates using a variety of etch mask materials including copper and nickel. Scanning electron microscope (SEM) and atomic force microscope (AFM) show different kinds of diamond etching pattern of two mask materials. It is observed that the etching pit of copper is tetrahedron, while the etching pit of nickel is step structure. This indicates diverse etching mechanism of diamond etched by different metal. Observing the surface etching topography of diamond and analyzing the etching mechanism of different metal can help study the growth of diamond by CVD and controllable etching of diamond.

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35

Hatada, Ruriko, Stefan Flege, Berthold Rimmler, Christian Dietz, Wolfgang Ensinger, and Koumei Baba. "Surface Structuring of Diamond-Like Carbon Films by Chemical Etching of Zinc Inclusions." Coatings 9, no. 2 (February 18, 2019): 125. http://dx.doi.org/10.3390/coatings9020125.

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A diamond-like carbon (DLC) film with a nanostructured surface can be produced in a two-step process. At first, a metal-containing DLC film is deposited. Here, the combination of plasma source ion implantation using a hydrocarbon gas and magnetron sputtering of a zinc target was used. Next, the metal particles within the surface are dissolved by an etchant (HNO3:H2O solution in this case). Since Zn particles in the surface of Zn-DLC films have a diameter of 100–200 nm, the resulting surface structures possess the same dimensions, thus covering a range that is accessible neither by mask deposition techniques nor by etching of other metal-containing DLC films, such as Cu-DLC. The surface morphology of the etched Zn-DLC films depends on the initial metal content of the film. With a low zinc concentration of about 10 at.%, separate holes are produced within the surface. Higher zinc concentrations (40 at.% or above) lead to a surface with an intrinsic roughness.

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36

Lubas, Malgorzata, Jaroslaw Jan Jasinski, Anna Zawada, and Iwona Przerada. "Influence of Sandblasting and Chemical Etching on Titanium 99.2–Dental Porcelain Bond Strength." Materials 15, no. 1 (December 24, 2021): 116. http://dx.doi.org/10.3390/ma15010116.

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The metal–ceramic interface requires proper surface preparation of both metal and ceramic substrates. This process is complicated by the differences in chemical bonds and physicochemical properties that characterise the two materials. However, adequate bond strength at the interface and phase composition of the titanium-bioceramics system is essential for the durability of dental implants and improving the substrates’ functional properties. In this paper, the authors present the results of a study determining the effect of mechanical and chemical surface treatment (sandblasting and etching) on the strength and quality of the titanium-low-fusing dental porcelain bond. To evaluate the strength of the metal-ceramic interface, the authors performed mechanical tests (three-point bending) according to EN ISO 9693 standard, microscopic observations (SEM-EDS), and Raman spectroscopy studies. The results showed that depending on the chemical etching medium used, different bond strength values and failure mechanisms of the metal-ceramic system were observed. The analyzed samples met the requirements of EN ISO 9693 for metal-ceramic systems and received strength values above 25 MPa. Higher joint strength was obtained for the samples after sandblasting and chemical etching compared to the samples subjected only to sandblasting.

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37

Zhou, Jie, Justinas Palisaitis, Joseph Halim, Martin Dahlqvist, Quanzheng Tao, Ingemar Persson, Lars Hultman, Per O. Å. Persson, and Johanna Rosen. "Boridene: Two-dimensional Mo4/3B2-x with ordered metal vacancies obtained by chemical exfoliation." Science 373, no. 6556 (August 12, 2021): 801–5. http://dx.doi.org/10.1126/science.abf6239.

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Extensive research has been invested in two-dimensional (2D) materials, typically synthesized by exfoliation of van der Waals solids. One exception is MXenes, derived from the etching of constituent layers in transition metal carbides and nitrides. We report the experimental realization of boridene in the form of single-layer 2D molybdenum boride sheets with ordered metal vacancies, Mo4/3B2-xTz (where Tz is fluorine, oxygen, or hydroxide surface terminations), produced by selective etching of aluminum and yttrium or scandium atoms from 3D in-plane chemically ordered (Mo2/3Y1/3)2AlB2 and (Mo2/3Sc1/3)2AlB2 in aqueous hydrofluoric acid. The discovery of a 2D transition metal boride suggests a wealth of future 2D materials that can be obtained through the chemical exfoliation of laminated compounds.

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38

Egorova, L. M., V. I. Larin, and V. V. Datsenko. "Chemical Etching of Cu98Be Alloy in Electrolyte Solutions." Elektronnaya Obrabotka Materialov 58, no. 1 (February 2022): 22–29. http://dx.doi.org/10.52577/eom.2022.58.1.22.

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The process of chemical etching of Cu98Be alloy in solutions of various compositions was investigated. The rate of etching of beryllium bronze in the investigated solutions was deter-mined, and its change in time was studied. The selectivity of dissolution of the components of Cu98Be during prolonged etching in solutions of different electrolytes was established. A possibility of achieving uniform etching of Cu98Be alloy by varying the composition of the etching solution was shown. The concentrations of metal ions in the used etching solutions were determined, and the capacity of those solutions was calculated. The compositions of solutions with a high capacity for both alloy components during prolonged etching was estab-lished. The optimal compositions of etching solutions providing high-quality etching of beryl-lium bronze according to several criteria such as: a high process rate, uniform dissolution of alloy components, high capacity for both alloy components were proposed. The morphology of the Cu98Be electrode surface after etching in solutions, providing uniform dissolution for both alloy components, was studied. The absence of surface passivation after chemical etch-ing in these solutions was shown. The chemical nature of the compounds formed in the form of small inclusions on the etched surface of the electrode was established. The obtained results are of great importance in practical use because they allow selecting the appropriate composition of the etching solution, which, in turn, helps to optimize the technological etching process.

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39

Hanke, L. D., and K. Schenk. "Sputter etching for microstructure evaluation of small-diameter corrosion-resistant MP35N alloy wire." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 1038–39. http://dx.doi.org/10.1017/s0424820100167652.

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Metal alloy microstructures are characteristic of the material’s mechanical and physical properties, including the key properties of strength and corrosion resistance. Microstructural evaluations typically use chemical etching to reveal the material’s structure. For corrosion-resistant alloys, chemical etching can be difficult due to the inherent chemical resistance of the material. This is especially true for active-passive alloys, where the etching reaction is highly dependent on the final polishing and even the time delay between polishing and etching.Chemical etching is further complicated for extremely fine microstructures and when two or more metals are joined in the sample. These factors are concerns for fine wires, such as those used in implantable medical devices. A common alloy for wires in many medical applications is a Co-Ni-Cr-Mo alloy, designated as MP35N. Wires with extremely small diameters are produced by severe drawing processes that result in very fine microstructures. The alloy is often used in composite wire products, such as an MP35N outer sheath containing a silver core.

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40

Song, Yunwon, Bugeun Ki, Keorock Choi, Ilwhan Oh, and Jungwoo Oh. "In-plane and out-of-plane mass transport during metal-assisted chemical etching of GaAs." J. Mater. Chem. A 2, no. 29 (2014): 11017–21. http://dx.doi.org/10.1039/c4ta02189d.

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We have demonstrated the dependence of the metal-assisted chemical etching of GaAs on catalyst thickness. For ultra-thin (3~10 nm) Au catalysts, we found that electrochemically generated nano-pinholes in the metal catalyst not only enhance important catalytic effects in redox reactions, but also act as a diffusion pathway for the reactants (H₂SO₄) and products (Ga³⁺ and Asⁿ⁺ ions) for chemical etching oxidized GaAs.

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41

Li, Meicheng, Yingfeng Li, Wenjian Liu, Luo Yue, Ruike Li, Younan Luo, Mwenya Trevor, et al. "Metal-assisted chemical etching for designable monocrystalline silicon nanostructure." Materials Research Bulletin 76 (April 2016): 436–49. http://dx.doi.org/10.1016/j.materresbull.2016.01.006.

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42

Han, Hee, Zhipeng Huang, and Woo Lee. "Metal-assisted chemical etching of silicon and nanotechnology applications." Nano Today 9, no. 3 (June 2014): 271–304. http://dx.doi.org/10.1016/j.nantod.2014.04.013.

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43

Sandu, Georgiana, Jonathan Avila Osses, Marine Luciano, Darwin Caina, Antoine Stopin, Davide Bonifazi, Jean-François Gohy, et al. "Kinked Silicon Nanowires: Superstructures by Metal-Assisted Chemical Etching." Nano Letters 19, no. 11 (October 8, 2019): 7681–90. http://dx.doi.org/10.1021/acs.nanolett.9b02568.

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44

Leng, Xidu, Chengyong Wang, and Zhishan Yuan. "Progress in metal-assisted chemical etching of silicon nanostructures." Procedia CIRP 89 (2020): 26–32. http://dx.doi.org/10.1016/j.procir.2020.05.114.

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45

Quiroga-González, Enrique, Miguel Ángel Juárez-Estrada, and Estela Gómez-Barojas. "(Invited) Light Enhanced Metal Assisted Chemical Etching of Silicon." ECS Transactions 86, no. 1 (July 20, 2018): 55–63. http://dx.doi.org/10.1149/08601.0055ecst.

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46

Kim, Sang-Mi, and Dahl-Young Khang. "Bulk Micromachining of Si by Metal-assisted Chemical Etching." Small 10, no. 18 (May 13, 2014): 3761–66. http://dx.doi.org/10.1002/smll.201303379.

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47

Cheung, Ho-Yuen, Hao Lin, Fei Xiu, Fengyun Wang, SenPo Yip, Johnny C. Ho, and Chun-Yuen Wong. "Mechanistic Characteristics of Metal-Assisted Chemical Etching in GaAs." Journal of Physical Chemistry C 118, no. 13 (March 25, 2014): 6903–8. http://dx.doi.org/10.1021/jp500968p.

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48

Chartier, C., S. Bastide, and C. Lévy-Clément. "Metal-assisted chemical etching of silicon in HF–H2O2." Electrochimica Acta 53, no. 17 (July 2008): 5509–16. http://dx.doi.org/10.1016/j.electacta.2008.03.009.

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49

Smith, Zachary R., Rosemary L. Smith, and Scott D. Collins. "Mechanism of nanowire formation in metal assisted chemical etching." Electrochimica Acta 92 (March 2013): 139–47. http://dx.doi.org/10.1016/j.electacta.2012.12.075.

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50

Yang, Xiaoyu, Ling Tong, Lin Wu, Baoguo Zhang, Zhiyuan Liao, Ao Chen, Yilai Zhou, Ying Liu, and Ya Hu. "Research progress of silicon nanostructures prepared by electrochemical etching based on galvanic cells." Journal of Physics: Conference Series 2076, no. 1 (November 1, 2021): 012117. http://dx.doi.org/10.1088/1742-6596/2076/1/012117.

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Анотація:

Abstract Metal-assisted etching of silicon in HF aqueous solution has attracted widespread attention due to its potential applications in electronics, photonics, renewable energy, and biotechnology. In this paper, the basic process and mechanism of metal assisted electrochemical etching of silicon in vapor or liquid atmosphere based on galvanic cells are reviewed. This paper focuses on the use of gas-phase oxidants O2 and H2O2 instead of liquid phase oxidants Fe(NO3)3 and H2O2 to catalyze the etching of silicon in the vapor atmosphere of HF aqueous solution. The mechanism of substrate enhanced metal-assisted chemical etching for the preparation of large-area silicon micro nanostructure arrays is summarized, and the impact of substrate type and surface area on reactive etching is discussed.

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