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Статті в журналах з теми "Metal chemical etching"
Kim, D. E., and N. P. Suh. "Chemical Smoothing of Rough Metal Surfaces." Journal of Engineering for Industry 114, no. 4 (November 1, 1992): 421–26. http://dx.doi.org/10.1115/1.2900693.
Повний текст джерелаWang, Qi, Kehong Zhou, Shuai Zhao, Wen Yang, Hongsheng Zhang, Wensheng Yan, Yi Huang, and Guodong Yuan. "Metal-Assisted Chemical Etching for Anisotropic Deep Trenching of GaN Array." Nanomaterials 11, no. 12 (November 24, 2021): 3179. http://dx.doi.org/10.3390/nano11123179.
Повний текст джерелаLi, Liyi, Colin M. Holmes, Jinho Hah, Owen J. Hildreth, and Ching P. Wong. "Uniform Metal-assisted Chemical Etching and the Stability of Catalysts." MRS Proceedings 1801 (2015): 1–8. http://dx.doi.org/10.1557/opl.2015.574.
Повний текст джерелаDai, Li Ping, Guo Jun Zhang, Shu Ya Wang, and Zhi Qin Zhong. "XPS Study on Barium Strontium Titanate (BST) Thin Films Etching in SF6/Ar Plasma." Advanced Materials Research 415-417 (December 2011): 1964–68. http://dx.doi.org/10.4028/www.scientific.net/amr.415-417.1964.
Повний текст джерелаChoi, Keorock, Yunwon Song, Ilwhan Oh, and Jungwoo Oh. "Catalyst feature independent metal-assisted chemical etching of silicon." RSC Advances 5, no. 93 (2015): 76128–32. http://dx.doi.org/10.1039/c5ra15745e.
Повний текст джерелаLee, Hun Hee, Min Sang Yun, Hyun Wook Lee, and Jin Goo Park. "Removing W Polymer Residue from BEOL Structures Using DSP+ (Dilute Sulfuric-Peroxide-HF) Mixture – A Case Study." Solid State Phenomena 195 (December 2012): 128–31. http://dx.doi.org/10.4028/www.scientific.net/ssp.195.128.
Повний текст джерелаTice, Scott, and Chan Geun Park. "Metal Etch in Advanced Immersion Tank with Precision Uniformity Using Agitation and Wafer Rotation." Solid State Phenomena 219 (September 2014): 138–42. http://dx.doi.org/10.4028/www.scientific.net/ssp.219.138.
Повний текст джерелаKim, Wungyeon, Hyunjeong Kim, and Gyu Tae Kim. "Ultra-Easy and Fast Method for Transferring Graphene Grown on Metal Foil." Nano 12, no. 11 (November 2017): 1750140. http://dx.doi.org/10.1142/s1793292017501405.
Повний текст джерелаLova, Paola, Valentina Robbiano, Franco Cacialli, Davide Comoretto, and Cesare Soci. "Black GaAs by Metal-Assisted Chemical Etching." ACS Applied Materials & Interfaces 10, no. 39 (September 7, 2018): 33434–40. http://dx.doi.org/10.1021/acsami.8b10370.
Повний текст джерелаPérez-Díaz, Oscar, and Enrique Quiroga-González. "Silicon Conical Structures by Metal Assisted Chemical Etching." Micromachines 11, no. 4 (April 11, 2020): 402. http://dx.doi.org/10.3390/mi11040402.
Повний текст джерелаДисертації з теми "Metal chemical etching"
Hildreth, Owen James. "Development of metal-assisted chemical etching as a 3D nanofabrication platform." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/49011.
Повний текст джерелаAnokhina, Ksenia. "Investigation of Metal-assisted Si Etching for Fabrication of Nanoimprint Lithography Stamps." Thesis, Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE), 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-14459.
Повний текст джерелаNgqoloda, Siphelo. "Vertically aligned silicon nanowires synthesised by metal assisted chemical etching for photovoltaic applications." University of the Western Cape, 2015. http://hdl.handle.net/11394/4872.
Повний текст джерелаOne-dimensional silicon nanowires (SiNWs) are promising building blocks for solar cells as they provide a controlled, vectorial transport route for photo-generated charge carriers in the device as well as providing anti-reflection for incoming light. Two major approaches are followed to synthesise SiNWs, namely the bottom-up approach during vapour-liquid-solid mechanism which employs chemical vapour deposition techniques. The other method is the top-down approach via metal assisted chemical etching (MaCE). MaCE provides a simple, inexpensive and repeatable process that yields radially and vertically aligned SiNWs in which the structure is easily controlled by changing the etching time or chemical concentrations. During MaCE synthesis, a crystalline silicon (c-Si) substrate covered with metal nanoparticles (catalyst) is etched in a diluted hydrofluoric acid solution containing oxidising agents. Since the first report on SiNWs synthesised via MaCE, various publications have described the growth during the MaCE process. However lingering questions around the role of the catalyst during formation, dispersion and the eventual diameter of the nanowires remain. In addition, very little information pertaining to the changes in crystallinity and atomic bonding properties of the nanowires post synthesis is known. As such, this study investigates the evolution of vertical SiNWs from deposited silver nanoparticles by means of in-depth electron microscopy analyses. Changes in crystallinity during synthesis of the nanowires are probed using x-ray diffraction (XRD) and transmission electron microscopy (TEM). Deviations in the optical properties are quantified using optical reflectivity measurements by employing ultraviolet-visible (UV-Vis) spectroscopy, whereas the bonding configurations of the nanowires are probed by Raman and Fourier transforms infrared spectroscopy. Diameters of 50 – 200 nm vertical SiNWs were obtained from scanning electron micrographs and nanowires lengths linearly increased with etching time duration from about 130 nm after 30 seconds to over 15 μm after 80 minutes. No diameter modulations along nanowires axial direction and rough nanowires apexes were observed for nanowires obtained at longer etching times. These SiNWs remained crystalline as their bulk single crystalline Si wafers but had a thin amorphous layer on the surface, findings confirmed by TEM, XRD and Raman analysis. Nanowires were found to be partially passivated with oxygen with small traces of hydrogen termination, confirmed with infrared absorption studies. Finally, low optical reflection of less than 10% over visible range compared to an average of 30% for bulk Si were measured depicting an antireflective ability required in silicon solar cells.
Khanyile, Sfiso Zwelisha. "Silicon nanowires by metal-assisted chemical etching and its incorporation into hybrid solar cells." University of Western Cape, 2021. http://hdl.handle.net/11394/8340.
Повний текст джерелаThe rapid increase in global energy demand in recent decades coupled with the adverse environmental impact of conventional fuels has led to a high demand for alternative energy sources that are sustainable and efficient. Renewable solar energy technologies have received huge attention in recent decades with the aim of producing highly efficient, safe, flexible and robust solar cells to withstand harsh weather conditions. c-Si has been the material of choice in the development of conventional inorganic solar cells owing to it superior properties, abundance and higher efficiencies. However, the associated high costs of Si processing for solar cells have led to a gravitation towards alternative organic solar cells which are cheaper and easy to process even though they suffer from stability and durability challenges. In this work, combination of both inorganic and organic materials to form hybrid solar cells is one of the approaches adopted in order to address the challenges faced by solar cell development.
Zheng, Wen Ph D. Massachusetts Institute of Technology. "Fabrication of capacitors based on silicon nanowire arrays generated by metal-assisted wet chemical etching." Thesis, Massachusetts Institute of Technology, 2016. http://hdl.handle.net/1721.1/104114.
Повний текст джерелаThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 170-177).
Capacitors with high capacitance density (capacitance per footprint area) have potential applications in autonomous microsystems that harvest energy from the environment, as they can store and release energy at high rates. Use of high surface-to-volume ratio structures has been demonstrated as an effective way to increase the electrode area, and therefore to improve the capacitance density, while still keeping the footprint area low. The goal of this thesis was to first develop an understanding of the mechanisms of metal assisted wet chemical etching for fabrication of arrays of silicon nanowires, and then use this understanding to build nanowire array on-chip capacitors in silicon substrates, in order to eliminate additional packaging and enable local and efficient energy delivery. Two types of capacitors were investigated: electrostatic metal-oxide-semiconductor (MOS) capacitors for power management, and supercapacitors for energy storage purposes. For both types of devices, enlarged surface area per footprint was achieved by utilizing the arrays of silicon nanowires. Fundamental studies of the roles of metals in metal-assisted chemical etching (MACE) of silicon were conducted. Lithography techniques were used to generate patterns in metal films which when subjected to MACE resulted in formation of ordered arrays of silicon nanowires. Investigation of various metal catalysts showed that Pt is a more active catalyst than Au, while Cu is not stable in the etchant. Tapered silicon nanowires can be generated by adding a layer of Cu between two Au layers, and etching occurs much faster than when a pure Au catalyst is used. While carrying out research on the mechanisms of MACE, we developed a new electrochemical method for formation of arrays of silicon nanowires, metal-assisted anodic etching (MAAE). In this process, the etchant consists of HF alone, and does not include an oxidant. In both processes, HF is used as an etchant. However, in MACE, electronic holes are supplied through reduction of an oxidant (e.g. H₂O₂), while in MAAE, electronic holes are supplied through an external circuit, with anodic contact to either the metal or the silicon. In both contact cases for MAAE, the metal catalyzes the etching process and leads to controlled formation of silicon nanowires, without the need for an oxidant. This discovery, and its analysis, provided new insights into the mechanisms of both MAAE and MACE, and also opened the possibility for use of metal catalyzed electrochemical etching of other materials that cannot survive the HF/oxidant mixture. Processes for fabrication of on-chip capacitors based on silicon nanowires were next developed. We first fabricated on-chip MOS capacitors with nanowire arrays etched using MACE with both single crystal silicon substrates and polycrystalline silicon films. For wires made in both cases, the capacitance density followed a same scaling trend related to their geometries. Epitaxial wafers were used with a post-etch doping process to reduce the series resistance in the devices in order to obtain a better frequency response, as desired for high frequency circuits. To achieve higher capacitance densities for energy storage purposes, we also designed a solid state supercapacitor device based on nanowires etched using MAAE with heavily doped n-type silicon substrates. The silicon nanowires were coated with RuO₂ using atomic layer deposition (ALD) to achieve a high capacitance. In this case, charge is stored through the formation of an electrical double layer and through reversible redox reactions. We showed that the capacitance density of these devices roughly scaled with the increased surface area of silicon nanowire arrays. The solid state supercapacitor achieved a capacitance density of 6.5mF/cm², which is comparable to the best results achieved with other types of on-chip supercapacitors. In contrast with other processes for forming on-chip supercapacitors, the supercapacitors we demonstrated were fabricated using a fully complementary metal-oxide-semiconductor (CMOS) technology compatible process. Moreover, the Si nanowire-based device achieved this high capacitance density without sacrificing power performance compared to the planar device.
by Wen Zheng.
Ph. D.
Мадан, Роман Григорович. "Фотоперетворювачі на основі наноструктурованого кремнію". Bachelor's thesis, КПІ ім. Ігоря Сікорського, 2019. https://ela.kpi.ua/handle/123456789/28855.
Повний текст джерелаThe work consists of 55 pages, 4 sections and contains 35 illustrations, 24 tables and 19 sources in the list of references. The actuality of the topic is the interest in the creation of hybrid organic and inorganic photoconductors that have a lower cost than traditional ones. The purpose of the work is to study the volt-ampere characteristics of nanostructured silicon solar cells. Comparison of the characteristics of porous silicon obtained at different times of etching. The object of research is nanostructured silicon solar cells. Subject of research - methods of obtaining and morphology of nanostructured layer of indium and tin oxide, as well as melanine films.
Мадан, Роман Григорович. "Органо-неорганічні гібриди на основі меланіну". Master's thesis, КПІ ім. Ігоря Сікорського, 2020. https://ela.kpi.ua/handle/123456789/38762.
Повний текст джерелаThe relevance of the topic is the interest in creating hybrid organic and inorganic thin-film solar cells, which have a lower cost than traditional solar cells. The aim of the work is to determine the optimal technological conditions for the creation of organic-inorganic structures for photovoltaic applications. The subject of research - organo-inorganic structures based on silicon and melanin.
Xu, Ying. "Fabrication and Characterization of Photodiodes for Silicon Nanowire Applications and Backside Illumination." University of Dayton / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1446313926.
Повний текст джерелаTogonal, Alienor. "Silicon Nanowires for Photovoltaics : from the Material to the Device." Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLX032/document.
Повний текст джерелаSilicon Nanowire (SiNW) based solar cells offer an interesting choice towards low-cost and highly efficient solar cells. Indeed solar cells based on SiNWs benefit from their outstanding optical properties such as extreme light trapping and very low reflectance. In this research project, we have fabricated disordered SiNWs using a low-cost top-down approach named the Metal-Assisted-Chemical-Etching process (MACE). The MACE process was first optimized to reduce the strong agglomeration observed at the top-end of the SiNWs by tuning the wettability properties of both the initial substrate and the SiNWs surface. By combining the MACE process with the nanosphere lithography, we have also produced ordered SiNW arrays with an accurate control over the pitch, diameter and length. The optical properties of these SiNW arrays were then investigated both theoretically and experimentally in order to identify the geometrical configuration giving the best optical performance. Disordered and ordered SiNW arrays have been integrated into two types of solar cells: heterojunction with intrinsic thin layer (HIT) and hybrid devices. SiNW based HIT devices were fabricated by RF-PECVD and the optimization of the process conditions has allowed us to reach efficiency as high as 12.9% with excellent fill factor above 80%. Hybrid solar cells based on the combination of SiNWs with an organic layer have also been studied and characterized. The possible transfer of this concept to the thin film technology is finally explored
Wickramasinghe, Thushan E. "Growth Techniques and Optical and Electrical Characterization of Quantum Confined Zero-Dimensional and Two-Dimensional Device Structures." Ohio University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou156631995093606.
Повний текст джерелаКниги з теми "Metal chemical etching"
Micro- and Nano-Fabrication by Metal Assisted Chemical Etching. MDPI, 2021. http://dx.doi.org/10.3390/books978-3-03943-846-4.
Повний текст джерелаParker, Philip M. The 2007-2012 World Outlook for Photo Chemical Metal Etching and Machining Excluding Metal Nameplates. ICON Group International, Inc., 2006.
Знайти повний текст джерелаThe 2006-2011 World Outlook for Photo Chemical Metal Etching and Machining Excluding Metal Nameplates. Icon Group International, Inc., 2005.
Знайти повний текст джерелаЧастини книг з теми "Metal chemical etching"
Borsellino, C., G. Di Bella, and V. F. Ruisi. "Effect of Chemical Etching on Adhesively Bonded Aluminum AA6082." In Sheet Metal 2007, 669–76. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-437-5.669.
Повний текст джерелаLee, Seyeong, Dong-Hee Kang, Seong-Min Kim, and Myung-Han Yoon. "Vertical silicon nanostructures via metal-assisted chemical etching." In Silicon Nanomaterials Sourcebook, 169–92. Boca Raton, FL : CRC Press, Taylor & Francis Group, [2017] | Series: Series in materials science and engineering: CRC Press, 2017. http://dx.doi.org/10.4324/9781315153551-8.
Повний текст джерелаIvanov, B., D. Philipov, V. Shanov, and G. Peev. "Laser Induced Chemical Etching of Silicon with SF6 Using a Copper Bromide Vapour Laser." In Pulsed Metal Vapour Lasers, 383–88. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-1669-2_41.
Повний текст джерелаHildreth, Owen, and C. P. Wong. "Nano-metal-Assisted Chemical Etching for Fabricating Semiconductor and Optoelectronic Devices." In Materials for Advanced Packaging, 879–922. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-45098-8_21.
Повний текст джерелаToan, Nguyen Van, and Takahito Ono. "Capacitive Silicon Resonators with Narrow Gaps Formed by Metal-Assisted Chemical Etching." In Capacitive Silicon Resonators, 82–98. Boca Raton, FL : CRC Press/Taylor & Francis Group, [2020]: CRC Press, 2019. http://dx.doi.org/10.1201/9780429266010-7.
Повний текст джерелаSharma, Virender, Abhishek Verma, Vinod Kumar Jain, and Daisy Verma. "Antireflection Properties of Multi-crystalline Black Silicon with Acid Textured Surfaces Using Two Step Metal Assisted Chemical Etching." In Springer Proceedings in Physics, 23–28. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-29096-6_3.
Повний текст джерелаHadjersi, T., N. Gabouze, A. Ababou, M. Boumaour, W. Chergui, H. Cheraga, S. Belhouse, and A. Djeghri. "Metal-Assisted Chemical Etching of Multicrystalline Silicon in HF/ Na2S2O8 Produces Porous Silicon." In Materials Science Forum, 139–44. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-962-8.139.
Повний текст джерелаVosough, Manoucheh, Ping Liu, and Inge Svenningsson. "Depth Profile of Titanium Alloy (Ti-6Al-4V) and Residual Stress Measured by Using X-Ray Diffraction after Metal Cutting Assisted by High-Pressured Jet Cooling Evaluation of Etching Methods: ION Beam (EDOS) and Electro-Chemical Etching." In Materials Science Forum, 545–51. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-969-5.545.
Повний текст джерелаLee, Seyeong, Dong-Hee Kang, Seong-Min Kim, and Myung-Han Yoon. "Vertical silicon nanostructures via metal-assisted chemical etching." In Silicon Nanomaterials Sourcebook, 169–92. CRC Press, 2017. http://dx.doi.org/10.1201/9781315153551-9.
Повний текст джерелаHalstead, Judith Ann. "REACTIONS OF METAL SPECIES IN DRY ETCHING AND CHEMICAL VAPOR DEPOSITION." In Gas Phase Metal Reactions, 661–82. Elsevier, 1992. http://dx.doi.org/10.1016/b978-0-444-89070-2.50031-1.
Повний текст джерелаТези доповідей конференцій з теми "Metal chemical etching"
AMBROŽ, Ondřej, Jan ČERMÁK, and Šárka MIKMEKOVÁ. "Apparatus for Automatic chemical etching of metallographic samples." In METAL 2021. TANGER Ltd., 2021. http://dx.doi.org/10.37904/metal.2021.4146.
Повний текст джерелаLeong, Wei Sun, and John T. L. Thong. "Metal-assisted chemical etching of molybdenum disulphide." In 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2015. http://dx.doi.org/10.1109/nano.2015.7388658.
Повний текст джерелаXu, Hongbo, Jianqiang Wang, Hongyun Zhao, and Mingyu Li. "Silicon Vias Fabricatied by Metal-Assisted Chemical Etching." In 2020 21st International Conference on Electronic Packaging Technology (ICEPT). IEEE, 2020. http://dx.doi.org/10.1109/icept50128.2020.9202901.
Повний текст джерелаToan, N. V., M. Toda, and T. Ono. "High aspect silicon structures using metal assisted chemical etching." In 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2016. http://dx.doi.org/10.1109/nano.2016.7751348.
Повний текст джерелаKoval, Viktoriia, Yuriy Yakymenko, Anatoliy Ivashchuk, Mykhailo Dusheyko, Oleksandr Masalskyi, Mykola Koliada, and Dmytro Kulish. "Metal-Assisted Chemical Etching of Silicon for Photovoltaic Application." In 2019 IEEE 39th International Conference on Electronics and Nanotechnology (ELNANO). IEEE, 2019. http://dx.doi.org/10.1109/elnano.2019.8783506.
Повний текст джерелаXu, Ying, Chuan Ni, and Andrew Sarangan. "Silicon nanowire photodetectors made by metal-assisted chemical etching." In SPIE Nanoscience + Engineering, edited by Eva M. Campo, Elizabeth A. Dobisz, and Louay A. Eldada. SPIE, 2016. http://dx.doi.org/10.1117/12.2238480.
Повний текст джерелаJana, S., and S. R. Bhattacharyya. "Metal assisted chemical etching for light emitting silicon nanowires." In PROCEEDING OF INTERNATIONAL CONFERENCE ON RECENT TRENDS IN APPLIED PHYSICS AND MATERIAL SCIENCE: RAM 2013. AIP, 2013. http://dx.doi.org/10.1063/1.4810212.
Повний текст джерелаAsano, Yusaku, Keiichiro Matsuo, Hisashi Ito, Kazuhito Higuchi, Kazuo Shimokawa, and Tsuyoshi Sato. "A novel wafer dicing method using metal-assisted chemical etching." In 2015 IEEE 65th Electronic Components and Technology Conference (ECTC). IEEE, 2015. http://dx.doi.org/10.1109/ectc.2015.7159692.
Повний текст джерелаSong-Ting Yang, Chien-Ting Liu, Subramani Thiyagu, Chen-Chih Hsueh, and Ching-Fuh Lin. "Fabrication of Silicon thin film by metal-assisted chemical etching." In 2014 IEEE 14th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2014. http://dx.doi.org/10.1109/nano.2014.6967974.
Повний текст джерелаPyatilova, O., S. Gavrilov, A. Sysa, A. Savitskiy, A. Shuliatyev, A. Dudin, and A. Pavlov. "Metal-assisted chemical etching of silicon with different metal films and clusters: a review." In The International Conference on Micro- and Nano-Electronics 2016, edited by Vladimir F. Lukichev and Konstantin V. Rudenko. SPIE, 2016. http://dx.doi.org/10.1117/12.2266862.
Повний текст джерела