Готові списки джерел за темами / Metal chalcogenide films

Добірка наукової літератури з теми "Metal chalcogenide films"

Автор: Grafiati

Опубліковано: 10 грудня 2022

Оновлено: 28 січня 2023

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Статті в журналах з теми "Metal chalcogenide films"

Chuprakov, I. S., and K. H. Dahmen. "CVD of metal chalcogenide films." Le Journal de Physique IV 09, PR8 (September 1999): Pr8–313—Pr8–319. http://dx.doi.org/10.1051/jp4:1999838.

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Zhang, Ruihong, Seonghyuk Cho, Daw Gen Lim, Xianyi Hu, Eric A. Stach, Carol A. Handwerker, and Rakesh Agrawal. "Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices." Chemical Communications 52, no. 28 (2016): 5007–10. http://dx.doi.org/10.1039/c5cc09915c.

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Polivtseva, Svetlana, Julia Kois, Tatiana Kruzhilina, Reelika Kaupmees, Mihhail Klopov, Palanivel Molaiyan, Heleen van Gog, Marijn A. van Huis, and Olga Volobujeva. "Solution-Mediated Inversion of SnSe to Sb2Se3 Thin-Films." Nanomaterials 12, no. 17 (August 23, 2022): 2898. http://dx.doi.org/10.3390/nano12172898.

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New facile and controllable approaches to fabricating metal chalcogenide thin films with adjustable properties can significantly expand the scope of these materials in numerous optoelectronic and photovoltaic devices. Most traditional and especially wet-chemical synthetic pathways suffer from a sluggish ability to regulate the composition and have difficulty achieving the high-quality structural properties of the sought-after metal chalcogenides, especially at large 2D length scales. In this effort, and for the first time, we illustrated the fast and complete inversion of continuous SnSe thin-films to Sb2Se3 using a scalable top-down ion-exchange approach. Processing in dense solution systems yielded the formation of Sb2Se3 films with favorable structural characteristics, while oxide phases, which are typically present in most Sb2Se3 films regardless of the synthetic protocols used, were eliminated. Density functional theory (DFT) calculations performed on intermediate phases show strong relaxations of the atomic lattice due to the presence of substitutional and vacancy defects, which likely enhances the mobility of cationic species during cation exchange. Our concept can be applied to customize the properties of other metal chalcogenides or manufacture layered structures.

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Chane-Ching, J. Y., L. Perrin, P. Puech, V. Bourdon, V. Foncrose, A. Balocchi, X. Marie, and P. Lavedan. "Water-soluble, heterometallic chalcogenide oligomers as building blocks for functional films." Inorganic Chemistry Frontiers 3, no. 5 (2016): 689–701. http://dx.doi.org/10.1039/c5qi00250h.

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Deo, Soumya R., Ajaya K. Singh, Lata Deshmukh, and Md Abu Bin Hasan Susan. "Metal Chalcogenide Nanocrystalline Solid Thin Films." Journal of Electronic Materials 44, no. 11 (August 4, 2015): 4098–127. http://dx.doi.org/10.1007/s11664-015-3940-0.

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Priyadarshini, Priyanka, Subhashree Das, and Ramakanta Naik. "A review on metal-doped chalcogenide films and their effect on various optoelectronic properties for different applications." RSC Advances 12, no. 16 (2022): 9599–620. http://dx.doi.org/10.1039/d2ra00771a.

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Lokhande, C. D. "Chemical deposition of metal chalcogenide thin films." Materials Chemistry and Physics 27, no. 1 (January 1991): 1–43. http://dx.doi.org/10.1016/0254-0584(91)90158-q.

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Al-Shakban, Mundher, Peter D. Matthews, and Paul O'Brien. "A simple route to complex materials: the synthesis of alkaline earth – transition metal sulfides." Chemical Communications 53, no. 72 (2017): 10058–61. http://dx.doi.org/10.1039/c7cc05643e.

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Sengupta, Sucheta, Rinki Aggarwal, and Yuval Golan. "The effect of complexing agents in chemical solution deposition of metal chalcogenide thin films." Materials Chemistry Frontiers 5, no. 5 (2021): 2035–50. http://dx.doi.org/10.1039/d0qm00931h.

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This review article gives an overview of different complexing agents used during chemical deposition of metal chalcogenide thin films and their role in controlling the resultant morphology by effective complexation of the metal ion.

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Chen, Huihui, Chuanbao Cao, Binghui Ge, Yongkai Li, Junfeng Han, and Zhuo Chen. "Wafer-scale metal chalcogenide thin films via an ion exchange approach." Journal of Materials Chemistry C 8, no. 41 (2020): 14393–401. http://dx.doi.org/10.1039/d0tc03540h.

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Developing facile and controllable ways to tune the optoelectronic properties of metal chalcogenide thin films via chemical composition is of significant importance for boosting their application in various functional devices.

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Дисертації з теми "Metal chalcogenide films"

Pearce, Amber Marie. "Synthesis and characterisation of metal chalcogenide thin films." Thesis, University of Manchester, 2014. https://www.research.manchester.ac.uk/portal/en/theses/synthesis-and-characterisation-of-metal-chalcogenide-thin-films(7a22c662-639c-4aaf-a4cc-f2ae655115c0).html.

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There is much interest in the electronic potential of ‘nano’-semiconductors. The avenue of research pursued in this project was in inorganic analogues of graphene, namely metal chalcogenides MxEy (M = metal, E = S, Se, Te, x ≠ y = integer value). Thin films of these materials have been used in solar cells, ambient thermoelectric generators and IR detectors, due to their interesting properties, such as: optoelectronics, magnetooptic, piezoelectric, thermoelectric and photovoltaic, as well as electrical conductivity. The key issues with the use of these materials are the formation of controlled films, especially in terms of stoichiometry, crystallinity and uniformity, and also the precursor system used. The aim of this research was to synthesise and isolate novel precursor compounds for use in the deposition of metal sulfide thin films (for use with molybdenum and tungsten). The potential viability of the compounds as single source precursors (ssp) was judged following ThermoGravimetric Analysis (TGA). The compounds were also subjected to analysis using NMR (1H, 13C and 31P where applicable), infrared and UV-Vis spectroscopy, as well as elemental analysis. Cadmium sulfide (CdS) is one of the key direct band gap II-VI semiconductors, having vital optoelectronic applications for laser light-emitting diodes, and optical devices based on non-linear properties. The ratio of these films should ideally be 1:1, however, during the formation of cadmium sulfide films, particularly at elevated temperatures, a common problem encountered is the production of sulfur deficient films. These films have a formula consistent with 〖Cd〗_x S_y, where x is an integer value greater than y, but the sulfur deficiency is generally no greater than 10 %. In order to correct this sulfur deficiency, it was decided to investigate deposition making use of both a ssp and an additional sulfur source, with the aim of producing uniform films with 1:1 Cd:S.Molybdenum disulfide films have been deposited previously from multi source precursors and more recently using ssp. In this project MoS2 was deposited using novel ssps in both LP and AACVD on a variety of substrates with the aim of producing uniform thin films and assessing any differences in the morphology of the deposition. This work was continued with the deposition of WS2 and MoxW1-xS2 from ssps which had not been reported previously. The films deposited were analysed using XRD, SEM, EDX (when available) and Raman spectroscopy.

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Volkmann, Christian. "Atomic layer deposition of metal and metal chalcogenide thin films and nanolaminate composites." Doctoral thesis, Niedersächsische Staats- und Universitätsbibliothek Göttingen, 2017. http://hdl.handle.net/11858/00-1735-0000-002E-E3AE-5.

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Redman, Helen. "The growth of transition metal chalcogenide thin films using chemical vapour deposition." Thesis, University of Reading, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.312584.

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Ezenwa, Emmanuel. "N,N-diethyl-N'-naphthoylacylchalcogourea to metal (II)complexes as precursors for ternary metal chalcogenide thin films via AACVD." Thesis, University of Manchester, 2016. https://www.research.manchester.ac.uk/portal/en/theses/nndiethylnnaphthoylacylchalcogoureatometal-iicomplexes-as-precursors-for-ternary-metal-chalcogenide-thin-films-via-aacvd(85420a4c-89d4-4465-9734-ca40a75ba924).html.

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In this thesis complexes of acylchalcogoureas with cadmium (II), lead (II) and nickel (II) have been synthesised and investigated as single source precursors for the formation of metal chalcogenide thin films viaaerosol assisted chemical vapour deposition (AACVD). Routes to binary thin films have been explored using homoleptic complexes of the general structure bis(N,N-diethyl-N'-naphthoylchalcogoureato)metal(II). Analysis of the thin films produced showed the successful deposition of the binary materials from the synthesised complexes when characterised by powder XRD, ICP-OES, SEM and EDX. Routes to ternary thin films with the general structure MExE'1-x, where M represents a metal (Cd, Ni and Pb); and E chalcogen (S or Se) have been investigated using heteroleptic metal complexes of cadmium, nickel or lead including different chalcogen containing N,N-diethyl-N'-naphthoylchalcogoureato ligands and diethyldithiocarbamate. The precursors were fully characterised and novel compounds had their crystal structures determined. The heteroleptic complexes were thermolysed by AACVD forming the MExE'1-x thin films. In the cases of lead, nickel and cadmium the thin films produced showed that the composition of the film tended heavily towards the metal selenide. Ternary films of type MS1-xSex was prepared by mixing their binary precursors of type bis(N,N-diethyl-N'-naphthoylselenoureato)metal(II) and bis(N,N-diethyl-N'-naphthoylthioureato)metal(II) [metal = Cd, Ni and Pb]. In the case of lead and cadmium chalcogenide films variation of the ratio of sulphur and selenium containing precursors allowed for the full transition in composition between metal sulphide and metal selenide. In the case of CdS1-xSexthe band gap of the films was determined from UV-visible spectroscopy to vary from 2.4 eV (CdS) to 1.7 eV(CdSe). In the case of NiS1-xSex the movement from sulphide to selenide was less simple with multiple phases of nickel chalcogenides produced.

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Chang, Yao-Pang. "Complexes of Group V and VI metals with soft donor ligands : towards reagents for early metal chalcogenide thin films." Thesis, University of Southampton, 2017. https://eprints.soton.ac.uk/417996/.

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Preparations of NbX4 (X = Cl, Br) have been developed in good yield, leading to the formation of a series of 2:1 and 1:1 adducts upon reaction with neutral diphosphine ligands. The 2:1 ligand:metal complexes [NbX4(P–P)2] (X = Cl, Br; P–P = Me2P(CH2)2PMe2, Et2(CH2)2PEt2, o-C6H4(PMe2)2) were characterised by IR and UV-visible spectroscopies, their purities determined by microanalysis and the solid-state structures confirmed by X-ray crystallography to be that of eight coordinate dodecahedra or square antiprisms. The dimeric 1:1 complexes [Nb2X4(P–P)2(μ-X)4] (P–P = Me2P(CH2)2PMe2, Et2P(CH2)2PEt2, Ph2P(CH2)3PPh2, Cy2P(CH2)2PCy2, o-C6H4(PPh2)2) were also characterised by 1H and 31P{1H} NMR spectroscopy. A series of six-coordinate monomeric complexes, [NbCl4(L–L)] (L–L = MeS(CH2)2SMe, iPrS(CH2)2SiPr, MeS(CH2)3SMe, o-C6H4(CH2SEt)2, MeSe(CH2)2SeMe, MeSe(CH2)3SeMe and nBuSe(CH2)3SenBu) and [NbCl4(ER2)2] (ER2 = SMe2, SeMe2, SenBu2 and TeMe2) were prepared from NbCl4 and the ligand in CH2Cl2 solution. X-ray structures show that most of them form six-coordinate octahedral complexes, whereas [NbCl4(SeMe2)2] and [NbCl4(TeMe2)2] are thought to be dimeric from X-ray crystallography of the latter. The Nb(IV) complexes were unsuitable as CVD precursors. Monomeric [NbSCl3(L–L)] (L–L = MeS(CH2)2SMe, iPrS(CH2)2SiPr, MeS(CH2)3SMe, nBuS(CH2)3SnBu and MeSe(CH2)3SeMe) and dimeric [NbSCl3(SR2)] (R = Me and nBu) were prepared from reaction of [NbSCl3(NCCH3)2] with the ligand in CH2Cl2 solution or reaction of [NbCl5(SR2)] with S(SiMe3)2 in CH2Cl2 solution and characterised by IR, 1H NMR and 93Nb NMR spectroscopies, X-ray crystallography and microanalysis. Isolated complexes [NbSenCl3(L)] (n = 1, L = CH3CN; n = 2, L = nBu2Se) were identified by IR spectroscopy and microanalysis. [NbSCl3(SnBu2)], [NbSCl3(nBuS(CH2)3SnBu)] and [NbSe2Cl3(SenBu2)] were used as single source precursors in LPCVD. The resulting NbS2 and NbSe2 thin films were characterised via X-ray diffraction, SEM and EDX spectroscopy. Isolated complexes of the form, [MBr5(EnBu2)] (M = Nb, Ta; E = S, Se), were identified via IR and multinuclear NMR spectroscopies and the Nb complexes were used as single source precursors in LPCVD to deposit NbS2 and NbSe2 thin films. The growth of 2H-/3R-NbSe2 thin films was controlled by varying the temperature used in LPCVD. All NbS2 and 2H-/3R-NbSe2 thin films were characterised using X-ray diffraction, SEM and EDX spectroscopies. A series of new MoCl4 complexes, [MoCl4(ER2)2] (ER2 = Me2S, Me2Se, nBu2S, nBu2Se) and [MoCl4(L–L)] (L–L = MeS(CH2)2SMe, iPrS(CH2)2SiPr, MeS(CH2)3SMe, and MeSe(CH2)3SeMe), were made using MoCl5 or [MoCl4(NCCH3)2] as the Mo source and characterised using IR and UV-visible spectroscopies, X-ray crystallography and microanalysis. Single source LPCVD precursors, [MoCl4(SnBu2)2] and [MoCl4(SenBu2)2], deposited MoS2 or MoSe2 thin films which were characterised via X-ray diffraction, SEM and EDX spectroscopy.

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Junaghadwala, Sakina Mohsin. "Metal Modified Ge-Se Glass Films and Their Potential for Nanodipole Junctionless Photovoltaics." University of Toledo / OhioLINK, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1320061322.

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Volkmann, Christian [Verfasser], Sven [Akademischer Betreuer] Schneider, Dietmar [Gutachter] Stalke, Inke [Gutachter] Siewert, Selvan [Gutachter] Demir, Guido [Gutachter] Clever, and Thomas [Gutachter] Waitz. "Atomic layer deposition of metal and metal chalcogenide thin films and nanolaminate composites. / Christian Volkmann ; Gutachter: Dietmar Stalke, Inke Siewert, Selvan Demir, Guido Clever, Thomas Waitz ; Betreuer: Sven Schneider." Göttingen : Niedersächsische Staats- und Universitätsbibliothek Göttingen, 2018. http://d-nb.info/1172500754/34.

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Cuthbert, Edwin. "The synthesis of metal chalcogenide volatile precursors in the formation of antimony and bismuth sulphide thin films and the synthesis of amine adducts for the formation of gallium nitride by MOCVD." Thesis, University of Reading, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.250737.

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Zella, Leo W. "Metal Ion Diusion in Thin Film Chalcogenides." Ohio University / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1467075804.

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Jürgensen, Lasse [Verfasser]. "Thin Films of Transition Metal Chalcogenides: Novel Molecular Pathways and Catalytic Applications / Lasse Jürgensen." München : Verlag Dr. Hut, 2021. http://d-nb.info/1232846740/34.

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Частини книг з теми "Metal chalcogenide films"

Heo, Seung Hwae, Seungki Jo, Soyoung Cho, and Jae Sung Son. "Solution-Processed Metal Chalcogenide Thermoelectric Thin Films." In Thin Film and Flexible Thermoelectric Generators, Devices and Sensors, 59–77. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-45862-1_3.

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Khan, Malik Dilshad, and Neerish Revaprasadu. "Metal–organic precursors for ternary and quaternary metal chalcogenide nanoparticles and thin films." In Nanoscience, 1–31. Cambridge: Royal Society of Chemistry, 2020. http://dx.doi.org/10.1039/9781788017053-00001.

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Khan, Malik Dilshad, and Neerish Revaprasadu. "Progress in single source precursors for layered 2D metal chalcogenide thin films and nanomaterials." In Nanoscience, 86–120. Cambridge: Royal Society of Chemistry, 2018. http://dx.doi.org/10.1039/9781788013871-00086.

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Bledt, Carlos M., Daniel V. Kopp, and James A. Harrington. "Dielectric II-VI and IV-VI Metal Chalcogenide Thin Films in Silver Coated Hollow Glass Waveguides (HGWS) for Infrared Spectroscopy and Laser Delivery." In Ceramic Transactions Series, 1–12. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2012. http://dx.doi.org/10.1002/9781118511350.ch1.

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Banik, Ananya, Suresh Perumal, and Kanishka Biswas. "Thermoelectric Properties of Metal Chalcogenides Nanosheets and Nanofilms Grown by Chemical and Physical Routes." In Thermoelectric Thin Films, 157–84. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-20043-5_8.

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"Transmission electron microscopy on metal-amorphous chalcogenide films." In Electron Microscopy and Analysis 2001, 495–98. CRC Press, 2001. http://dx.doi.org/10.1201/9781482289510-122.

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Min, Ho Soon. "Characterization Techniques for Metal Chalcogenide Thin Films: Review." In Current Advances in Chemistry and Biochemistry Vol. 1, 106–25. Book Publisher International (a part of SCIENCEDOMAIN International), 2021. http://dx.doi.org/10.9734/bpi/cacb/v1/7235d.

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Soonmin, Ho, Immanuel Paulraj, Mohanraj Kumar, Rakesh K. Sonker, and Pronoy Nandi. "Recent Developments on the Properties of Chalcogenide Thin Films." In Chalcogens [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.102429.

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Chalcogenide thin films have attracted a great deal of attention for decades because of their unique properties. The recent developments on thin film-based supercapacitor applications were reported. As a result of sustained efforts, the experimental findings revealed remarkable properties with enhanced fabrication methods. The properties of perovskite solar cells were discussed in terms of crystal structure and phase transition, electronic structure, optical properties, and electrical properties. Perovskite solar cell has gained attention due to its high absorption coefficient with a sharp absorption edge, high photoluminescence quantum yield, long charge carrier diffusion lengths, large mobility, high defect tolerance, and low surface recombination velocity. The thin film-based gas sensors are used for equally the identification and quantification of gases, and hence should be both selective and sensitive to a required target gas in a mixture of gases. Metal chalcogenide materials are considered excellent absorber materials in photovoltaic cell applications. These materials exhibited excellent absorption coefficient and suitable band gap value to absorb the maximum number of photons from sun radiation. The photovoltaic parameters were strongly dependent on various experimental conditions.

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"An investigation of metallic lines produced by an electron beam induced effect in metal-amorphous chalcogenide films." In Electron Microscopy and Analysis 2001, 527–30. CRC Press, 2001. http://dx.doi.org/10.1201/9781482289510-130.

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Petrov, V. V., A. A. Kryuchyn, V. M. Rubish, and M. L. Trunov. "Recording of Micro/Nanosized Elements on Thin Films of Glassy Chalcogenide Semiconductors by Optical Radiation." In Chalcogens [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.102886.

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Inorganic resists based on chalcogenide glassy semiconductor (CGS) films can be effectively used in the creation of micro- and nanoelements of optoelectronic devices, micro- and nanoelectromechanical systems, and diffractive optical elements. The use of these materials is based mainly on their sensitivity to different types of radiation, which causes phase and structural changes in CGS films, and transparency in the infrared range. A number of photoinduced changes are observed in CGS, which are associated with structural transformations, phase transitions, defect formation, and atomic diffusion. It is important to determine technologies for the formation of micro- and nanoscale structures on CGS films, which can be used in the creation of diffractive optical elements for optoelectronic devices. Increasing the resolution of recording media based on vitreous chalcogenide semiconductors can be achieved by choosing the recording modes and composition of glasses, in which the strongest nonlinearity of the exposure characteristics of photosensitive material, as well as the introduction into the structure of recording media nanoparticles of noble metals for excitation of plasmonic resonance.

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Тези доповідей конференцій з теми "Metal chalcogenide films"

Nair, Padmanabhan K., M. T. S. Nair, O. Gomez-Daza, Victor M. Garcia, A. Castillo, O. L. Arenas, Y. Pena, and L. Guerrero. "Laminated solar-control safety glass incorporating chemically deposited metal chalcogenide thin films." In Optical Science, Engineering and Instrumentation '97, edited by Carl M. Lampert, Claes G. Granqvist, Michael Graetzel, and Satyen K. Deb. SPIE, 1997. http://dx.doi.org/10.1117/12.290209.

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Nair, Padmanabhan K., Santhamma M. Nair, Hailin Hu, Ling Huang, R. A. Zingaro, and E. A. Meyers. "New p-type absorber films formed by interfacial diffusion in chemically deposited metal chalcogenide multilayer films." In SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, edited by Carl M. Lampert, Satyen K. Deb, and Claes-Goeran Granqvist. SPIE, 1995. http://dx.doi.org/10.1117/12.217335.

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Bansal, Shalu, Zhongwei Gao, Chih-hung Chang, and Rajiv Malhotra. "Rapid Intense Pulse Light Sintering of Copper Sulphide Nanoparticle Films." In ASME 2017 12th International Manufacturing Science and Engineering Conference collocated with the JSME/ASME 2017 6th International Conference on Materials and Processing. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/msec2017-2739.

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Copper sulphide (CuxS, x = 1 to 2) is a metal chalcogenide semiconductor that exhibits useful optical and electrical properties due to the presence of copper vacancies. This makes CuxS thin films useful for a number of applications including infrared absorbing coatings, solar cells, thin-film electronics, and as a precursor for CZTS (Copper Zinc Tin Sulphide) thin films. Post-deposition sintering of CuxS nanoparticle films is a key process that affects the film properties and hence determines its operational characteristics in the above applications. Intense pulse light (IPL) sintering uses visible broad-spectrum xenon light to rapidly sinter nanoparticle films over large-areas, and is compatible with methods such as roll-to-roll deposition for large-area deposition of colloidal nanoparticle films and patterns. This paper experimentally examines the effect of IPL parameters on sintering of CuxS thin films. As-deposited and sintered films are compared in terms of their crystal structure, as well as optical and electrical properties, as a function of the IPL parameters.

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Nair, P. K., A. Fernandez, and M. T. S. Nair. "Critical Analysis Of The Solar Control Performance Of Chemically Deposited Metal Chalcogenide Thin Films." In 33rd Annual Techincal Symposium, edited by Claes-Goeran Granqvist and Carl M. Lampert. SPIE, 1989. http://dx.doi.org/10.1117/12.962170.

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Tsuruoka, H., K. Kanazawa та S. Kuroda. "Effect of Post-annealing on Magnetic Properties of Ternary Transition-metal Chalcogenide (Cr,Fe)_1-_δTe thin films grown by MBE". У 2016 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2016. http://dx.doi.org/10.7567/ssdm.2016.ps-12-14.

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Enseleit, U., M. Berthold, W. Vonau, C. Feller, U. Partsch, M. Stoltenberg, and D. Arndt. "P1SM.6 - Thick-film Heavy-metal Sensor of Chalcogenide Glass." In 17th International Meeting on Chemical Sensors - IMCS 2018. AMA Service GmbH, Von-Münchhausen-Str. 49, 31515 Wunstorf, Germany, 2018. http://dx.doi.org/10.5162/imcs2018/p1sm.6.

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Звіти організацій з теми "Metal chalcogenide films"

Hopkins, Michael. Investigation of Magnetism in Transition Metal Chalcogenide Thin Films. Portland State University Library, January 2000. http://dx.doi.org/10.15760/etd.7479.

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