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Готові списки джерел за темами / Metal-Assisted chemical etching of silicon / Статті в журналах

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Статті в журналах з теми "Metal-Assisted chemical etching of silicon"

Автор: Grafiati

Опубліковано: 1 березня 2025

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1

Li, Yu Ping, Xiu Hua Chen, Wen Hui Ma, Shao Yuan Li, Ping Bi, Xue Mei Liu, and Fu Wei Xiang. "Research on Preparation of Porous Silicon Powders from Metallurgical Silicon Material." Materials Science Forum 847 (March 2016): 97–102. http://dx.doi.org/10.4028/www.scientific.net/msf.847.97.

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Анотація:

Stain etching, one step metal assisted chemical etching (1-MACE) and two-step metal assisted chemical etching (2-MACE) were used for preparing porous silicon powders (PSPs) based on metallurgical silicon powder. The influences of different oxidants species and concentrations on the structure of PSP were discussed. The results indicated that the different oxidant species has an important effect on the morphology and structure of PSP. In stain etching, there is still a challenge for fabricating PSP with uniform and controlled pore size structure. In contrast, metal-assisted chemical etching method is easier to prepare PSPs sample with uniform depth and pore size than stain etching, In 1-MACE, the growth rate of the PSPs pore was between 0.05 and 0.10 μm/min, which is far less than that of 2-MACE (about 0.2~0.5 μm/min). Furthermore, 2-MACE showed more advantages than stain etching and 1-MACE in controlling of pore size range and structure.

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2

Cao, Dao Tran, Cao Tuan Anh, and Luong Truc Quynh Ngan. "Vertical-Aligned Silicon Nanowire Arrays with Strong Photoluminescence Fabricated by Metal-Assisted Electrochemical Etching." Journal of Nanoelectronics and Optoelectronics 15, no. 1 (January 1, 2020): 127–35. http://dx.doi.org/10.1166/jno.2020.2684.

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Анотація:

Metal-assisted chemical etching of silicon is a commonly used method to fabricate vertical aligned silicon nanowire arrays. In this report we show that if in the above method the chemical etching is replaced by the electrochemical one, we can also produce silicon nanowire arrays, but with a special characteristic-extremely strong photoluminescence. Further research showed that the huge photoluminescence intensity of the silicon nanowire arrays made by metal-assisted electrochemical etching is related to the anodic oxidation of the silicon nanowires which has occurred during the electrochemical etching. It is most likely that the luminescence of the silicon nanowire arrays made with metal-assisted electrochemical etching is the luminescence of silicon nanocrystallites (located on the surface of silicon nanowire fibers) embedded in a silicon oxide matrix, similar to that in a silicon rich oxide system.

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3

St John, Christopher, Christian L. Arrington, Jonathan Coleman, Mason Risley, and David Bruce Burckel. "Metasurface Optic Features Using Metal-Assisted Chemical Etching (MACE)." ECS Meeting Abstracts MA2024-02, no. 16 (November 22, 2024): 1652. https://doi.org/10.1149/ma2024-02161652mtgabs.

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Анотація:

Metal-assisted chemical etching (MACE or MacEtch) is a versatile method for fabricating nano and micro-structured silicon (Si), which has garnered significant attention due to its potential applications in photovoltaics, sensors, and nanoelectronics. The process involves the oxidation of Si in the presence of a metal catalyst (typically noble metals like Au, Ag, or Pt) and a wet etch solution, usually comprising hydrofluoric acid (HF) and an oxidizing agent such as hydrogen peroxide (H2O2). Impressive work has already been completed in the two decades following the introduction of this method through the field of stain etching [1]. Researchers have reported anisotropic structures in silicon as high as 10,000:1 aspect ratio [2] and studied the impact of catalyst thickness [3], geometry [4], chemical ratios [5][6], and level of doping [7]. In this work, we systematically tune the selectivity of the MACE process based on the geometry of desired structures, chemical ratios of HF, H2O2 and ethanol, silicon doping types, and characteristics of the metal catalyst targeting our desired metasurface optic features. We use statistical analysis such as ensemble machine learning algorithms to create an informed understanding and importance matrix for each of these variables, toward the purpose of creating refractive optical features in silicon. The important parameters in the desired final product are vertical sidewalls, 10:1 aspect ratio, minimized surface roughness in the field, an optimized geometry, and a target depth. This comprehensive statistical analysis contributes to a deeper understanding of the MACE process, offering valuable guidelines for optimizing etching conditions to achieve desired micron to nanometer structures in silicon. The findings hold promise for advancing the fabrication of silicon-based nano-devices, paving the way for novel applications in various technological fields. SNL is managed and operated by NTESS under DOE NNSA contract DE-NA0003525 SAND2024-04791A [1] X. Li and P. W. Bohn, "Metal-assisted chemical etching in HF/H2O2 produces porous silicon," Applied Physics Letters, vol. 77, no. 16, pp. 2572-2574, 2000, doi: 10.1063/1.1319191. [2] L. Romano et al., "Metal assisted chemical etching of silicon in the gas phase: a nanofabrication platform for X-ray optics," Nanoscale Horizons, 10.1039/C9NH00709A vol. 5, no. 5, pp. 869-879, 2020, doi: 10.1039/C9NH00709A. [3] Z. Huang et al., "Extended Arrays of Vertically Aligned Sub-10 nm Diameter [100] Si Nanowires by Metal-Assisted Chemical Etching," Nano Letters, vol. 8, no. 9, pp. 3046-3051, 2008/09/10 2008, doi: 10.1021/nl802324y. [4] P. Lianto, S.-Y. Yu, J. Wu, C. V. Thompson, and W. K. Choi, "Vertical etching with isolated catalysts in metal-assisted chemical etching of silicon," Nanoscale, vol. 4 23, pp. 7532-9, 2012. [Online]. Available: https://doi.org/10.1039/C2NR32350H. [5] C. Chartier, S. Bastide, and C. Lévy-Clément, "Metal-assisted chemical etching of silicon in HF–H2O2," Electrochimica Acta, vol. 53, no. 17, pp. 5509-5516, 2008/07/01/ 2008, doi: https://doi.org/10.1016/j.electacta.2008.03.009. [6] W. Chern et al., "Nonlithographic Patterning and Metal-Assisted Chemical Etching for Manufacturing of Tunable Light-Emitting Silicon Nanowire Arrays," Nano Letters, vol. 10, no. 5, pp. 1582-1588, 2010/05/12 2010, doi: 10.1021/nl903841a. [7] R. A. Lai, T. M. Hymel, V. K. Narasimhan, and Y. Cui, "Schottky Barrier Catalysis Mechanism in Metal-Assisted Chemical Etching of Silicon," ACS Applied Materials & Interfaces, vol. 8, no. 14, pp. 8875-8879, 2016/04/13 2016, doi: 10.1021/acsami.6b01020. Figure 1

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4

Zhang, Lansheng, Xiaoyang Chu, Feng Tian, Yang Xu, and Huan Hu. "Bio-Inspired Hierarchical Micro-/Nanostructures for Anti-Icing Solely Fabricated by Metal-Assisted Chemical Etching." Micromachines 13, no. 7 (July 7, 2022): 1077. http://dx.doi.org/10.3390/mi13071077.

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Анотація:

We report a cost-effective and scalable methodology for producing a hierarchical micro-/nanostructured silicon surface solely by metal-assisted chemical etching. It involves two major processing steps of fabricating micropillars and nanowires separately. The process of producing micro-scale structures by masked metal-assisted chemical etching was optimized. Silicon nanowires were created on the micropillar’s surface via maskless metal-assisted chemical etching. The hierarchical micro-/nanostructured surface exhibits superhydrophobic properties with a high contact angle of ~156° and a low sliding angle of <2.5° for deionized water. Furthermore, due to the existence of microscale and nanoscale air trapped at the liquid/solid interface, it exhibits a long ice delay time of 2876 s at −5 °C, more than 5 times longer than that of smooth surfaces. Compared to conventional dry etching methods, the metal-assisted chemical etching approach excludes vacuum environments and high-temperature processes and can be applied for applications requiring hierarchical micro-/nanostructured surfaces or structures.

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5

Choi, Keorock, Yunwon Song, Ilwhan Oh, and Jungwoo Oh. "Catalyst feature independent metal-assisted chemical etching of silicon." RSC Advances 5, no. 93 (2015): 76128–32. http://dx.doi.org/10.1039/c5ra15745e.

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6

Li, Liyi, Colin M. Holmes, Jinho Hah, Owen J. Hildreth, and Ching P. Wong. "Uniform Metal-assisted Chemical Etching and the Stability of Catalysts." MRS Proceedings 1801 (2015): 1–8. http://dx.doi.org/10.1557/opl.2015.574.

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ABSTRACTRecently, metal-assisted chemical etching (MaCE) has been demonstrated as a promising technology in fabrication of uniform high-aspect-ratio (HAR) micro- and nanostructures on silicon substrates. In this work, MaCE experiments on 2 μm-wide line patterns were conducted using Au or Ag as catalysts. The performance of the two catalysts show sharp contrast. In MaCE with Au, a HAR trench was formed with uniform geometry and vertical sidewall. In MaCE with Ag, shallow and tapered etching profiles were observed, which resembled the results from isotropic etching. The sidewall tapering phenomena can be explained by the dissolution and re-deposition of the Ag catalyst in the etchant solution. The existence of Ag that was redeposited on the sidewall was further confirmed by energy dispersive spectrum. Also, etchant composition is found to play a profound role in influencing the etching profile by the Ag catalysts.

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7

Berezhanskyi, Ye I., S. I. Nichkalo, V. Yu Yerokhov, and A. A. Druzhynin. "Nanotexturing of Silicon by Metal-Assisted Chemical Etching." Фізика і хімія твердого тіла 16, no. 1 (March 15, 2015): 140–44. http://dx.doi.org/10.15330/pcss.16.1.140-144.

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Анотація:

This paper describes the method of metal assisted chemical etching (MacEtch) as an efficient approach for structuring the silicon surface with the ability to manage effectively the geometric parameters of the structures and their distribution on the surface of substrate. The surface texturing technology was presented and the structured silicon surfaces with regular and irregular types of surfaces have been obtained. This technology can be used for nanotexturing of the surface of silicon photovoltaic converters. The model of photovoltaic converter based on the crater-textured silicon surface with high efficiency was presented.

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8

Yang, Xiaoyu, Ling Tong, Lin Wu, Baoguo Zhang, Zhiyuan Liao, Ao Chen, Yilai Zhou, Ying Liu, and Ya Hu. "Research progress of silicon nanostructures prepared by electrochemical etching based on galvanic cells." Journal of Physics: Conference Series 2076, no. 1 (November 1, 2021): 012117. http://dx.doi.org/10.1088/1742-6596/2076/1/012117.

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Abstract Metal-assisted etching of silicon in HF aqueous solution has attracted widespread attention due to its potential applications in electronics, photonics, renewable energy, and biotechnology. In this paper, the basic process and mechanism of metal assisted electrochemical etching of silicon in vapor or liquid atmosphere based on galvanic cells are reviewed. This paper focuses on the use of gas-phase oxidants O2 and H2O2 instead of liquid phase oxidants Fe(NO3)3 and H2O2 to catalyze the etching of silicon in the vapor atmosphere of HF aqueous solution. The mechanism of substrate enhanced metal-assisted chemical etching for the preparation of large-area silicon micro nanostructure arrays is summarized, and the impact of substrate type and surface area on reactive etching is discussed.

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9

Lai, Chang Quan, Wen Zheng, W. K. Choi, and Carl V. Thompson. "Metal assisted anodic etching of silicon." Nanoscale 7, no. 25 (2015): 11123–34. http://dx.doi.org/10.1039/c5nr01916h.

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Анотація:

Metal assisted anodic etching (MAAE) of Si was studied to compare the effects of hole generation at Au/Si interfaces and electrolyte/Si interfaces, and investigate the effects that electronic and chemical processes have on the nanostructures formed.

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10

Iatsunskyi, Igor, Valentin Smyntyna, Nykolai Pavlenko, and Olga Sviridova. "Peculiarities of Photoluminescence in Porous Silicon Prepared by Metal-Assisted Chemical Etching." ISRN Optics 2012 (November 1, 2012): 1–6. http://dx.doi.org/10.5402/2012/958412.

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Photoluminescent (PL) porous layers were formed on p-type silicon by a metal-assisted chemical etching method using H2O2 as an oxidizing agent. Silver particles were deposited on the (100) Si surface prior to immersion in a solution of HF and H2O2. The morphology of the porous silicon (PS) layer formed by this method was investigated by atomic force microscopy (AFM). Depending on the metal-assisted chemical etching conditions, the macro- or microporous structures could be formed. Luminescence from metal-assisted chemically etched layers was measured. It was found that the PL intensity increases with increasing etching time. This behaviour is attributed to increase of the density of the silicon nanostructure. It was found the shift of PL peak to a green region with increasing of deposition time can be attributed to the change in porous morphology. Finally, the PL spectra of samples formed by high concentrated solution of AgNO3 showed two narrow peaks of emission at 520 and 550 nm. These peaks can be attributed to formation of AgF and AgF2 on a silicon surface.

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11

Pérez-Díaz, Oscar, and Enrique Quiroga-González. "Silicon Conical Structures by Metal Assisted Chemical Etching." Micromachines 11, no. 4 (April 11, 2020): 402. http://dx.doi.org/10.3390/mi11040402.

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Анотація:

A simple and inexpensive method to obtain Si conical structures is proposed. The method consists of a sequence of steps that include photolithography and metal assisted chemical etching (MACE) to create porous regions that are dissolved in a post-etching process. The proposed process takes advantage of the lateral etching obtained when using catalyst particles smaller than 40 nm for MACE. The final shape of the base of the structures is mainly given by the shape of the lithography mask used for the process. Conical structures ranging from units to hundreds of microns can be produced by this method. The advantage of the method is its simplicity, allowing the production of the structures in a basic chemical lab.

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12

Xia, Weiwei, Jun Zhu, Haibo Wang, and Xianghua Zeng. "Effect of catalyst shape on etching orientation in metal-assisted chemical etching of silicon." CrystEngComm 16, no. 20 (2014): 4289–97. http://dx.doi.org/10.1039/c4ce00006d.

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13

Skrypnyk, I. I., S. I. Nichkalo, and N. O. Shtangret. "The effect of clustering of Si nanowires produced by the metal-assisted chemical etching method on their anti-reflecting properties." Physics and Chemistry of Solid State 25, no. 4 (December 15, 2024): 903–9. https://doi.org/10.15330/pcss.25.4.903-909.

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Silicon nanowires are valuable for their compatibility with silicon technology and unique properties. Using metal-assisted chemical etching, we produced silicon nanowires and studied the effects of clustering, roughness, and length on wetting. Hydrophobicity depends on silicon nanowires clustering, which is influenced by length. The highest contact angle (~95º) was for 8.5-μm long nanowires. Below 8 μm, minimal clustering promotes wetting, while longer nanowires form larger clusters and hydrophobic surfaces. The Cassie–Baxter model applies initially, transitioning to the Wenzel model over time. Adjusting surface morphology can improve anti-reflective properties. Metal-assisted chemical etching offers control over the silicon nanowires’ length and wettability, benefiting silicon-based device development.

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14

Rai, Sadhna, Rabina Bhujel, Manas Kumar Mondal, Bibhu Prasad Swain, and Joydeep Biswas. "Study of the morphological, optical, structural and electrical properties of silicon nanowires at varying concentrations of the catalyst precursor." Materials Advances 3, no. 6 (2022): 2779–85. http://dx.doi.org/10.1039/d1ma01145f.

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15

Lipinski, M., J. Cichoszewski, R. P. Socha, and T. Piotrowski. "Porous Silicon Formation by Metal-Assisted Chemical Etching." Acta Physica Polonica A 116, Supplement (December 2009): S—117—S—119. http://dx.doi.org/10.12693/aphyspola.116.s-117.

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16

Hildreth, Owen J., and Daniel R. Schmidt. "Vapor Phase Metal-Assisted Chemical Etching of Silicon." Advanced Functional Materials 24, no. 24 (March 14, 2014): 3827–33. http://dx.doi.org/10.1002/adfm.201304129.

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17

Huang, Zhipeng, Nadine Geyer, Peter Werner, Johannes de Boor, and Ulrich Gösele. "Metal-Assisted Chemical Etching of Silicon: A Review." Advanced Materials 23, no. 2 (September 21, 2010): 285–308. http://dx.doi.org/10.1002/adma.201001784.

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18

Huang, Zhipeng, Nadine Geyer, Peter Werner, Johannes de Boor, and Ulrich Goesele. "ChemInform Abstract: Metal-Assisted Chemical Etching of Silicon." ChemInform 42, no. 14 (March 14, 2011): no. http://dx.doi.org/10.1002/chin.201114223.

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19

Zhang, Shiying, Zhenhua Li, and Qingjun Xu. "A systematic study of silicon nanowires array fabricated through metal-assisted chemical etching." European Physical Journal Applied Physics 92, no. 3 (December 2020): 30402. http://dx.doi.org/10.1051/epjap/2020200289.

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Aligned and uniform silicon nanowires (SiNWs) arrays were fabricated with good controllability and reproducibility by metal-assisted chemical etching in aqueous AgNO3/HF etching solutions in atmosphere. The SiNWs formed on silicon were characterized by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), high-resolution transmission electron microscopy (HRTEM) and selected-area electron diffraction (SAED). The results show that the as-prepared SiNWs are perfectly single crystals and the axial orientation of the Si nanowires is identified to be parallel to the [111] direction, which is identical to the initial silicon wafer. In addition, a series of experiments were conducted to study the effects of etching conditions such as solution concentration, etching time, and etching temperature on SiNWs. And the optimal solution concentrations for SiNWs have been identified. The formation mechanism of silicon nanowires and silver dendrites were also discussed.

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20

Akan, Rabia, and Ulrich Vogt. "Optimization of Metal-Assisted Chemical Etching for Deep Silicon Nanostructures." Nanomaterials 11, no. 11 (October 22, 2021): 2806. http://dx.doi.org/10.3390/nano11112806.

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High-aspect ratio silicon (Si) nanostructures are important for many applications. Metal-assisted chemical etching (MACE) is a wet-chemical method used for the fabrication of nanostructured Si. Two main challenges exist with etching Si structures in the nanometer range with MACE: keeping mechanical stability at high aspect ratios and maintaining a vertical etching profile. In this work, we investigated the etching behavior of two zone plate catalyst designs in a systematic manner at four different MACE conditions as a function of mechanical stability and etching verticality. The zone plate catalyst designs served as models for Si nanostructures over a wide range of feature sizes ranging from 850 nm to 30 nm at 1:1 line-to-space ratio. The first design was a grid-like, interconnected catalyst (brick wall) and the second design was a hybrid catalyst that was partly isolated, partly interconnected (fishbone). Results showed that the brick wall design was mechanically stable up to an aspect ratio of 30:1 with vertical Si structures at most investigated conditions. The fishbone design showed higher mechanical stability thanks to the Si backbone in the design, but on the other hand required careful control of the reaction kinetics for etching verticality. The influence of MACE reaction kinetics was identified by lowering the oxidant concentration, lowering the processing temperature and by isopropanol addition. We report an optimized MACE condition to achieve an aspect ratio of at least 100:1 at room temperature processing by incorporating isopropanol in the etching solution.

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21

Xu, Zhiyang, Hao Zhang, Chao Chen, Gohar Aziz, Jie Zhang, Xiaoxia Zhang, Jinxiang Deng, Tianrui Zhai, and Xinping Zhang. "A silicon-based quantum dot random laser." RSC Advances 9, no. 49 (2019): 28642–47. http://dx.doi.org/10.1039/c9ra04650j.

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22

Oh, Ilwhan. "Silicon Nanostructures Fabricated by Metal-Assisted Chemical Etching of Silicon." Journal of the Korean Electrochemical Society 16, no. 1 (February 28, 2013): 1–8. http://dx.doi.org/10.5229/jkes.2013.16.1.1.

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23

Volovlikova, Olga V., S. A. Gavrilov, P. I. Lazarenko, A. V. Kukin, A. A. Dudin, and A. K. Tarhanov. "Influence of Etching Regimes on the Reflectance of Black Silicon Films Formed by Ni-Assisted Chemical Etching." Key Engineering Materials 806 (June 2019): 24–29. http://dx.doi.org/10.4028/www.scientific.net/kem.806.24.

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This paper examines the influence of etching regimes on the reflectance of black silicon formed by Ni-assisted chemical etching. Black silicon exhibits properties of high light absorptance. The measured minimum values of the reflectance (R-min) of black silicon with thickness of 580 nm formed by metal-assisted chemical etching (MACE) for 60 minutes at 460 lx illumination were 2,3% in the UV region (200–400 nm), 0,5% in the visible region (400–750 nm) and 0,3% in the IR region (750–1300 nm). The findings showed that the reflectance of black silicon depends on its thickness, illumination and treatment duration. In addition, the porosity and refractive index were calculated.

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24

Lin, Hao, Ming Fang, Ho-Yuen Cheung, Fei Xiu, SenPo Yip, Chun-Yuen Wong, and Johnny C. Ho. "Hierarchical silicon nanostructured arrays via metal-assisted chemical etching." RSC Adv. 4, no. 91 (2014): 50081–85. http://dx.doi.org/10.1039/c4ra06172a.

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Hierarchically configured nanostructures, such as nanograss and nanowalls, have been fabricatedviaa low-cost approach that combines metal-assisted chemical etching (MaCE), nanosphere lithography and conventional photolithography.

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25

Dong, Gangqiang, Yurong Zhou, Hailong Zhang, Fengzhen Liu, Guangyi Li, and Meifang Zhu. "Passivation of high aspect ratio silicon nanowires by using catalytic chemical vapor deposition for radial heterojunction solar cell application." RSC Advances 7, no. 71 (2017): 45101–6. http://dx.doi.org/10.1039/c7ra08343b.

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26

Arafat, Mohammad Yasir, Mohammad Aminul Islam, Ahmad Wafi Bin Mahmood, Fairuz Abdullah, Mohammad Nur-E-Alam, Tiong Sieh Kiong, and Nowshad Amin. "Fabrication of Black Silicon via Metal-Assisted Chemical Etching—A Review." Sustainability 13, no. 19 (September 28, 2021): 10766. http://dx.doi.org/10.3390/su131910766.

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The metal-assisted chemical etching (MACE) technique is commonly employed for texturing the wafer surfaces when fabricating black silicon (BSi) solar cells and is considered to be a potential technique to improve the efficiency of traditional Si-based solar cells. This article aims to review the MACE technique along with its mechanism for Ag-, Cu- and Ni-assisted etching. Primarily, several essential aspects of the fabrication of BSi are discussed, including chemical reaction, etching direction, mass transfer, and the overall etching process of the MACE method. Thereafter, three metal catalysts (Ag, Cu, and Ni) are critically analyzed to identify their roles in producing cost-effective and sustainable BSi solar cells with higher quality and efficiency. The conducted study revealed that Ag-etched BSi wafers are more suitable for the growth of higher quality and efficiency Si solar cells compared to Cu- and Ni-etched BSi wafers. However, both Cu and Ni seem to be more cost-effective and more appropriate for the mass production of BSi solar cells than Ag-etched wafers. Meanwhile, the Ni-assisted chemical etching process takes a longer time than Cu but the Ni-etched BSi solar cells possess enhanced light absorption capacity and lower activity in terms of the dissolution and oxidation process than Cu-etched BSi solar cells.

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27

Pyatilova, Olga V., Sergey A. Gavrilov, Alexey A. Dronov, Yana S. Grishina, and Alexey N. Belov. "Role of Ag⁺ Ion Concentration on Metal-Assisted Chemical Etching of Silicon." Solid State Phenomena 213 (March 2014): 103–8. http://dx.doi.org/10.4028/www.scientific.net/ssp.213.103.

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Abstract. Metal-assisted silicon etching in the HF/H2O2/H2O solution with silver ions as a catalyst was investigated. It is found that geometric parameters of layers of nanostructured silicon are determined by the silver-catalyst concentration. A spontaneous stop of the etching process at low Ag+ ion concentration is explained by formation of insoluble Ag2SiO3.

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28

Kara, S. A., A. Keffous, A. M. Giovannozzi, A. M. Rossi, E. Cara, L. D'Ortenzi, K. Sparnacci, L. Boarino, N. Gabouze, and S. Soukane. "Fabrication of flexible silicon nanowires by self-assembled metal assisted chemical etching for surface enhanced Raman spectroscopy." RSC Advances 6, no. 96 (2016): 93649–59. http://dx.doi.org/10.1039/c6ra20323j.

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29

Chen, Chia-Yun, and Yu-Rui Liu. "Exploring the kinetics of ordered silicon nanowires with the formation of nanogaps using metal-assisted chemical etching." Phys. Chem. Chem. Phys. 16, no. 48 (2014): 26711–14. http://dx.doi.org/10.1039/c4cp04237a.

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30

Quiroga-González, Enrique, Miguel Ángel Juárez-Estrada, and Estela Gómez-Barojas. "(Invited) Light Enhanced Metal Assisted Chemical Etching of Silicon." ECS Transactions 86, no. 1 (July 20, 2018): 55–63. http://dx.doi.org/10.1149/08601.0055ecst.

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31

Li, Meicheng, Yingfeng Li, Wenjian Liu, Luo Yue, Ruike Li, Younan Luo, Mwenya Trevor, et al. "Metal-assisted chemical etching for designable monocrystalline silicon nanostructure." Materials Research Bulletin 76 (April 2016): 436–49. http://dx.doi.org/10.1016/j.materresbull.2016.01.006.

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32

Leng, Xidu, Chengyong Wang, and Zhishan Yuan. "Progress in metal-assisted chemical etching of silicon nanostructures." Procedia CIRP 89 (2020): 26–32. http://dx.doi.org/10.1016/j.procir.2020.05.114.

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33

Sandu, Georgiana, Jonathan Avila Osses, Marine Luciano, Darwin Caina, Antoine Stopin, Davide Bonifazi, Jean-François Gohy, et al. "Kinked Silicon Nanowires: Superstructures by Metal-Assisted Chemical Etching." Nano Letters 19, no. 11 (October 8, 2019): 7681–90. http://dx.doi.org/10.1021/acs.nanolett.9b02568.

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34

Han, Hee, Zhipeng Huang, and Woo Lee. "Metal-assisted chemical etching of silicon and nanotechnology applications." Nano Today 9, no. 3 (June 2014): 271–304. http://dx.doi.org/10.1016/j.nantod.2014.04.013.

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35

Chartier, C., S. Bastide, and C. Lévy-Clément. "Metal-assisted chemical etching of silicon in HF–H2O2." Electrochimica Acta 53, no. 17 (July 2008): 5509–16. http://dx.doi.org/10.1016/j.electacta.2008.03.009.

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36

Matsumoto, Ayumu, Hikoyoshi Son, Makiho Eguchi, Keishi Iwamoto, Yuki Shimada, Kyohei Furukawa, and Shinji Yae. "General corrosion during metal-assisted etching of n-type silicon using different metal catalysts of silver, gold, and platinum." RSC Advances 10, no. 1 (2020): 253–59. http://dx.doi.org/10.1039/c9ra08728a.

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37

Blayney, G. J., C. Zaradzki, Y. Liu, M. A. Mohd-Azmi, and Owen J. Guy. "Anti-Reflective Porous Silicon Features by Substrate Conformal Imprint Lithography for Silicon Photovoltaic Applications." Materials Science Forum 806 (October 2014): 109–13. http://dx.doi.org/10.4028/www.scientific.net/msf.806.109.

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Анотація:

Silicon photovoltaic cells require anti-reflection treatments in order to minimise optical losses and improve cell efficiencies. Commercially, the silicon surface is textured using a chemical etchant followed by the addition of an anti-reflective coating to further suppress reflectivity. We present a process using metal assisted etching to create porous silicon features capable of reducing reflectivity to less than 5%. A method for producing porous silicon using Substrate Conformal Imprint Lithography (SCIL) has been developed in order to pattern the nanoscale anti-reflective structures onto silicon wafers.

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38

Жарова, Ю. А., В. А. Толмачев, А. И. Бедная та С. И. Павлов. "Поверхностные наноструктуры, формирующиеся на ранних стадиях металл-стимулированного химического травления кремния. Оптические свойства наночастиц серебра". Физика и техника полупроводников 52, № 3 (2018): 333. http://dx.doi.org/10.21883/ftp.2018.03.45617.8684.

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AbstractIn this two-part work, nanostructures formed in a three-step process of metal-assisted chemical etching of silicon are investigated. In the first part (present publication), the process of the chemical deposition of a layer of self-assembled silver nanoparticles on the surface of a silicon wafer (the first stage of metalassisted chemical etching) is studied. This layer, on the one hand, serves as a catalyst for the subsequent etching of silicon, and, on the other hand, represents a kind of mask for the formation of a certain topology of the emerging Si nanowires. The morphology of the obtained 40- to 60-nm-thick silver nanoparticle layers is investigated by scanning electron microscopy. The spectral dependences of the ellipsometric angles Ψ and Δ are measured using spectroscopic ellipsometry (λ = 250–900nm), and the complex dielectric function of the silver nanolayers is determined from these spectra. The dielectric function features a characteristic plasmon resonance peak in the ultraviolet spectral range. The study of the optical properties of Si nanofilament layers which form during the early stages of metal-assisted chemical etching will be reported as the second part of this work in a separate publication.

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39

Lianto, Prayudi, Sihang Yu, Jiaxin Wu, C. V. Thompson, and W. K. Choi. "Vertical etching with isolated catalysts in metal-assisted chemical etching of silicon." Nanoscale 4, no. 23 (2012): 7532. http://dx.doi.org/10.1039/c2nr32350h.

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40

Dusheiko, M. G., V. M. Koval, and T. Yu Obukhova. "Silicon nanowire arrays synthesized using the modified MACE process: Integration into chemical sensors and solar cells." Semiconductor Physics, Quantum Electronics and Optoelectronics 25, no. 1 (March 24, 2022): 58–67. http://dx.doi.org/10.15407/spqeo25.01.058.

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Анотація:

In this work, the influence of the technological process for metal-assisted chemical etching on surface morphology and electrophysical properties of obtained nanostructures has been investigated. It has been demonstrated that the obtained structures with a high aspect ratio could be used both in sensors and solar cells. It has been shown that application of the metal-assisted chemical etching (MACE) process enables to significantly improve the short-circuit current density in silicon solar cells (up to 29 mA/cm2). Also, the possibility of detection of hydrogen peroxide and glucose (via enzymatic reaction) by resistor-like sensors with nanostructured silicon as the sensitive area has been demonstrated with the sensitivity up to 2.5…2.75 mA/V•%.

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41

Ma, Guo Feng, Heng Ye, Hong Lin Zhang, Chun Lin He, and Li Na Sun. "Influence of Hf and H₂O₂ on Morphology of Silicon Formed by Ag Assisted Chemical Etching." Advanced Materials Research 953-954 (June 2014): 1045–48. http://dx.doi.org/10.4028/www.scientific.net/amr.953-954.1045.

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The Ag-assisted electroless etching of p-type silicon substrate in HF/H2O2solution at room temperature was investigated. In this work, the effects of HF, H2O2and their volume ratio on morphology and growth of p-type silicon substrate surface by using metal assisted etching were investigated in order to produce a highly efficient antireflecting structure. The Ag metal particles were deposited onto Si wafer by electroless deposition from a metal salt solution including HF. The experimental results show that the growth rate and morphology of the pores formed on the Ag metalized Si surfaces are strongly dependent on the volume ratio of HF and H2O2.

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42

Hu, Ya, Chensheng Jin, Ying Liu, Xiaoyu Yang, Zhiyuan Liao, Baoguo Zhang, Yilai Zhou, et al. "Metal Particle Evolution Behavior during Metal Assisted Chemical Etching of Silicon." ECS Journal of Solid State Science and Technology 10, no. 8 (August 1, 2021): 084002. http://dx.doi.org/10.1149/2162-8777/ac17be.

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43

Huang, Weiye, Junyi Wu, Wenxin Li, Guojin Chen, Changyong Chu, Chao Li, Yucheng Zhu, Hui Yang, and Yan Chao. "Fabrication of Silicon Nanowires by Metal-Assisted Chemical Etching Combined with Micro-Vibration." Materials 16, no. 15 (August 5, 2023): 5483. http://dx.doi.org/10.3390/ma16155483.

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In this work, we design a micro-vibration platform, which combined with the traditional metal-assisted chemical etching (MaCE) to etch silicon nanowires (SiNWs). The etching mechanism of SiNWs, including in the mass-transport (MT) and charge-transport (CT) processes, was explored through the characterization of SiNW’s length as a function of MaCE combined with micro-vibration conditions, such as vibration amplitude and frequency. The scanning electron microscope (SEM) experimental results indicated that the etching rate would be continuously improved with an increase in amplitude and reached its maximum at 4 μm. Further increasing amplitude reduced the etching rate and affected the morphology of the SiNWs. Adjusting the vibration frequency would result in a maximum etching rate at a frequency of 20 Hz, and increasing the frequency will not help to improve the etching effects.

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44

Janavicius, Lukas L., Julian A. Michaels, Clarence Chan, Dane J. Sievers, and Xiuling Li. "Programmable vapor-phase metal-assisted chemical etching for versatile high-aspect ratio silicon nanomanufacturing." Applied Physics Reviews 10, no. 1 (March 2023): 011409. http://dx.doi.org/10.1063/5.0132116.

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Defying the isotropic nature of traditional chemical etch, metal-assisted chemical etching (MacEtch) has allowed spatially defined anisotropic etching by using patterned metal catalyst films to locally enhance the etch rate of various semiconductors. Significant progress has been made on achieving unprecedented aspect ratio nanostructures using this facile approach, mostly in solution. However, the path to manufacturing scalability remains challenging because of the difficulties in controlling etch morphology (e.g., porosity and aggregation) and etch rate uniformity over a large area. Here, we report the first programmable vapor-phase MacEtch (VP-MacEtch) approach, with independent control of the etchant flow rates, injection and pulse time, and chamber pressure. In addition, another degree of freedom, light irradiation is integrated to allow photo-enhanced VP-MacEtch. Various silicon nanostructures are demonstrated with each of these parameters systematically varied synchronously or asynchronously, positioning MacEtch as a manufacturing technique for versatile arrays of three-dimensional silicon nanostructures. This work represents a critical step or a major milestone in the development of silicon MacEtch technology and also establishes the foundation for VP-MacEtch of compound semiconductors and related heterojunctions, for lasting impact on damage-free 3D electronic, photonic, quantum, and biomedical devices.

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45

Leonardi, Antonio Alessio, Maria José Lo Faro, and Alessia Irrera. "Silicon Nanowires Synthesis by Metal-Assisted Chemical Etching: A Review." Nanomaterials 11, no. 2 (February 3, 2021): 383. http://dx.doi.org/10.3390/nano11020383.

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Silicon is the undisputed leader for microelectronics among all the industrial materials and Si nanostructures flourish as natural candidates for tomorrow’s technologies due to the rising of novel physical properties at the nanoscale. In particular, silicon nanowires (Si NWs) are emerging as a promising resource in different fields such as electronics, photovoltaic, photonics, and sensing. Despite the plethora of techniques available for the synthesis of Si NWs, metal-assisted chemical etching (MACE) is today a cutting-edge technology for cost-effective Si nanomaterial fabrication already adopted in several research labs. During these years, MACE demonstrates interesting results for Si NW fabrication outstanding other methods. A critical study of all the main MACE routes for Si NWs is here presented, providing the comparison among all the advantages and drawbacks for different MACE approaches. All these fabrication techniques are investigated in terms of equipment, cost, complexity of the process, repeatability, also analyzing the possibility of a commercial transfer of these technologies for microelectronics, and which one may be preferred as industrial approach.

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46

St John, Christopher, Christian L. Arrington, Jonathan Coleman, Mason Risley, and David Bruce Burckel. "Tuning Machine Learning Hyperparameters of a Metal-Assisted Chemical Etching (MACE) Process." ECS Meeting Abstracts MA2024-02, no. 13 (November 22, 2024): 1576. https://doi.org/10.1149/ma2024-02131576mtgabs.

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Анотація:

Metal-assisted chemical etching (MACE or MacEtch) is a process with many confounding variables, which are covered throughout literature. In the process, a semiconductor material (typically silicon) is patterned with a metal catalyst and chemically etched in the presence of hydrofluoric acid (HF) and an oxidizing agent, typically hydrogen peroxide. The areas with metal catalyst present will form holes in the silicon, forming silicon oxide at the interface, which is then etched by the HF. The substrate material, catalyst thickness, ratio of chemistry, and geometry of features are among the variables which impact etch rate and anisotropic performance. In this work, we tune the hyperparameters of a machine learning model with the goal of better understanding the importance of the variables within the system. SNL is managed and operated by NTESS under DOE NNSA contract DE-NA0003525 SAND2024-04792A

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47

Chetibi L., Hamana D., and Achour S. "Metal assisted chemical etching of silicon and solution synthesis of Cu-=SUB=-2-=/SUB=-O/Si radial nanowire array heterojunctions." Semiconductors 57, no. 2 (2023): 112. http://dx.doi.org/10.21883/sc.2023.02.55956.3390.

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Cu2O/Si radial nanowire (NWs) array heterojunctions were prepared by depositing Cu2O nanoparticles via chemical bath deposition on n-Si nanowire arrays that were fabricated by metal-assisted electroless etching. After 20 cycles of deposition, large numbers of Cu2O nanoparticles with form shells that wrap the upper segment of each Si nanowire. This method of etching offers exceptional simplicity, flexibility, environmental friendliness, and scalability for the fabrication of three-dimensional silicon nanostructures with considerable depths, because of replacement of harsh oxidants such as H2O2 and AgNO3. Keywords: Cu2O/Si NWs heterojunctions, Cu2O nanoparticles, metal-assisted electroless etching.

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48

Jiang, Bing, Meicheng Li, Yu Liang, Yang Bai, Dandan Song, Yingfeng Li, and Jian Luo. "Etching anisotropy mechanisms lead to morphology-controlled silicon nanoporous structures by metal assisted chemical etching." Nanoscale 8, no. 5 (2016): 3085–92. http://dx.doi.org/10.1039/c5nr07327h.

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49

Balderas-Valadez, R. F., V. Agarwal, and C. Pacholski. "Fabrication of porous silicon-based optical sensors using metal-assisted chemical etching." RSC Advances 6, no. 26 (2016): 21430–34. http://dx.doi.org/10.1039/c5ra26816h.

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Анотація:

Metal-assisted chemical etching was exploited for fabricating a porous silicon double beam interferometer composed of pillars with large pores on top of a monolayer with smaller pores which can act as a sensing and reference channel, respectively.

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50

Schweizer, S. L., X. Li, J. Wang, A. Sprafke, and R. B. Wehrspohn. "Silicon Nanowires Self-Purification By Metal-Assisted Chemical Etching of Metallurgical Silicon." ECS Transactions 69, no. 2 (October 2, 2015): 241–48. http://dx.doi.org/10.1149/06902.0241ecst.

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