Дисертації з теми "Magnesium oxide thin film"
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Wang, Chao-Hsiung. "The growth of thin film epitaxial oxide-metal heterostructures." Thesis, University of Cambridge, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.368667.
Повний текст джерелаDyachenko, A. V. "Spray pyrolysis deposition of magnesium oxide thin films." Thesis, Сумський державний університет, 2014. http://essuir.sumdu.edu.ua/handle/123456789/34844.
Повний текст джерелаHlaing, Oo Win Maw. "Infrared spectroscopy of zinc oxide and magnesium nanostructures." Online access for everyone, 2007. http://www.dissertations.wsu.edu/Dissertations/Fall2007/w_hlaingoo_121107.pdf.
Повний текст джерелаBittau, Francesco. "Analysis and optimisation of window layers for thin film CDTE solar cells." Thesis, Loughborough University, 2017. https://dspace.lboro.ac.uk/2134/32642.
Повний текст джерелаJurgens-Kowal, Teresa Ann. "Preparation and characterization of synthetic mineral surfaces : adsorption and thermal decomposition of tetraethoxysilane on magnesium oxide, molybdenum, and titanium dioxide surfaces /." Thesis, Connect to this title online; UW restricted, 1996. http://hdl.handle.net/1773/9865.
Повний текст джерелаPousaneh, Elaheh, Tobias Rüffer, Khaybar Assim, Volodymyr Dzhagan, Julian Noll, Dietrich R. T. Zahn, Lutz Mertens, Michael Mehring, Stefan E. Schulz та Heinrich Lang. "Magnesium β-Ketoiminates as CVD Precursors for MgO Formation". Technische Universität Chemnitz, 2018. https://monarch.qucosa.de/id/qucosa%3A21427.
Повний текст джерелаSarpi, Brice. "Etude in-situ de la formation d'oxyde ultra-mince de magnésium sur substrats métalliques et semi-conducteurs." Thesis, Aix-Marseille, 2016. http://www.theses.fr/2016AIXM4329/document.
Повний текст джерелаThis PhD work was dedicated to studying the fundamental mechanisms driving the controlled growth of ultra-thin oxide films. An experimental set-up was designed to finely control the growth parameters under UHV conditions while allowing the study of such oxide layers in situ with STM-STS, AES and LEED. Using an original method based on alternate cycles of Mg monolayer adsorption and RT oxidation, we focused on the formation of systems exhibiting a wide range of potential applications: MgO/Si(100) and MgO/Ag(111). The MgO/Si(100) system revealed the growth of an ultra-thin Mg2Si layer at the interface between the MgO and the silicon. In agreement with thermodynamic calculations, a crystallization of this interlayer driven by a partial decomposition of the Mg2Si to a MgO oxide was shown to occur at RT. From ex situ TEM experiments, the involved epitaxial relationship highlighted the formation of an MgO / Mg2Si (11-1) / Si(001) heterostructure. A sharp interface with the silicon was formed, as much as an ultra-thin and amorphous MgO layer exhibiting both a good homogeneity and a high insulating character (bandgap of 6 eV).In the MgO/Ag(111) system, no interfacial alloy formation and a « liquid-like » growth for the Mg were evidenced at RT, using our experimental results coupled with the ab initio calculations performed by our co-workers at LAAS laboratory. Later, a double-layering O/Mg/O/Mg/Ag(111) grown at RT followed by UHV annealing at 430°C resulted in the stabilization of a polar MgO(111) ultra-thin film, which was characterized using LEED and STM-STS. The physicochemical properties of this polar oxide and the potential origin of its stability were discussed
Bitencourt, José Francisco Sousa. "Produção e caracterização de óxido de alumínio, aluminato de magnésio e filmes finos de óxido de alumínio para aplicações em radioterapia e dosimetria ambiental." Universidade de São Paulo, 2013. http://www.teses.usp.br/teses/disponiveis/3/3140/tde-11072014-014000/.
Повний текст джерелаThermoluminecent (TL), Optically Stimulated Luminescence (OSL), EPR (Electron spin Resonance) and Radioluminescence (RL) measurements were obtained from aluminum oxide and magnesium doped aluminum oxide samples. The samples were calcinated at three different temperatures (1100, 1350 and 1600°C) in order to observe variation of luminescent properties. As results, it was found that the calcination temperature is of great importance in the production of dosimetric materials, since the undoped sample calcinated at 1600°C showed the highest sensibility. In early works, magnesium doped aluminum oxide samples exhibited the formation of nanostructured layer composed by magnesium aluminate, observed using Transmission Electron Microscopy (TEM), which induced an increase of the luminescent properties. Samples of undoped and rare-earths doped magnesium aluminate, calcinated at 1100, 1350 and 1600°C, were produced. TL and OSL measurements were obtained from irradiated aliquots, analyzed and compared to EPR and XRD results. Results showed that, under the parameters used in this work, only gadolinium doped samples exhibited increase in TL and OSL emissions. XRD indicated the formation of Al5Er3O12 and Al5Yb3O12 structures in doped samples; gadolinium and europium doped samples also showed new structures, which couldnt be identified. Powder aluminum oxide was used to produce deposition targets, which were employed in the deposition of thin films over P type monocrystalline silicon (100) wafers. Variations of deposition parameters and heat treatment induced the formation of thin films with different characteristics, observed by XRD and luminescent analysis (TL). XRD results indicated the occurrence of alpha-Al2O3 in some of the thick films. Samples exposed to natural radiation produced TL emission in the visible spectrum.
Akyildiz, Hasan. "Hydrogen Storage In Magnesium Based Thin Film." Phd thesis, METU, 2010. http://etd.lib.metu.edu.tr/upload/12612652/index.pdf.
Повний текст джерелаztü
rk Co-Supervisor : Prof. Dr. Macit Ö
zenbas October 2010, 146 pages A study was carried out for the production of Mg-based thin films which can absorb and desorb hydrogen near ambient conditions, with fast kinetics. For this purpose, two deposition units were constructed
one high vacuum (HV) and the other ultra high vacuum (UHV) deposition system. The HV system was based on a pyrex bell jar and had two independent evaporation sources. The unit was used to deposit films of Mg, Mg capped with Pd and Au-Pd as well as Mg-Cu both in co-deposited and multilayered form within a thickness range of 0.4 to 1.5 &mu
m. The films were crystalline with columnar grains having some degree of preferred orientation. In terms of hydrogen storage properties, Mg/Pd system yielded the most favorable results. These films could desorb hydrogen at temperatures not greater than 473 K. The study on crystalline thin films has further shown that there is a narrow temperature window for useful hydrogenation of thin films, the upper limit of which is determined by the intermetallic formation. The UHV deposition system had four independent evaporation sources and incorporated substrate cooling by circulating cooled nitrogen gas through the substrate holder. Thin films of Mg-Cu were produced in this unit via co-evaporation technique to provide concentrations of 5, 10 and 15 at. % Cu. The films were 250-300 nm thick, capped with a thin layer of Pd, i.e. 5-25 nm. The deposition was yielded nanocrystalline or amorphous Mg-Cu thin films depending on the substrate temperature. At 298 K, the films were crystalline, the structure being refined with the increase in Cu content. At 223 K, the films were amorphous, except for Mg:Cu=95:5. The hydrogen sorption of the films was followed by resistance measurements, with the samples heated isochronally, initially under hydrogen and then under vacuum. The resistance data have shown that hydrogen sorption behaviour of thin films was improved by size refinement, and further by amorphization. Among the films deposited, amorphous Mg:Cu=85:15 alloy could absorb hydrogen at room temperature and could desorb it at 223 K (50 º
C), with fast kinetics.
Guan, Jingcheng. "Modelling zinc oxide thin-film growth." Thesis, Loughborough University, 2018. https://dspace.lboro.ac.uk/2134/36311.
Повний текст джерелаLi, Sonny X. "Nitrogen doped zinc oxide thin film." Berkeley, Calif. : Oak Ridge, Tenn. : Lawrence Berkeley National Laboratory ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2003. http://www.osti.gov/servlets/purl/821916-VLVAK9/native/.
Повний текст джерелаPublished through the Information Bridge: DOE Scientific and Technical Information. "LBNL--54116" Li, Sonny X. USDOE Director. Office of Science. Basic Energy Sciences (US) 12/15/2003. Report is also available in paper and microfiche from NTIS.
Özkan, Zayim E., and N. Karamahmutoglu. "Carbon Nanotubes Doped Vanadium Oxide Thin Film." Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/35004.
Повний текст джерелаMeng, Keng-Yuan. "Magnetic Skyrmions in Oxide Thin Film Heterostructures." The Ohio State University, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1562856036665345.
Повний текст джерелаZhang, Jiawei. "Oxide-semiconductor-based thin-film electronic devices." Thesis, University of Manchester, 2016. https://www.research.manchester.ac.uk/portal/en/theses/oxidesemiconductorbased-thinfilm-electronic-devices(c8cde776-b68b-47b5-ab63-382a86dbb94b).html.
Повний текст джерелаLacovig, Paolo. "Electronic structure, morphology and chemical reactivity of nanoclusters and low-dimensional systems: fast photoemission spectroscopy studies." Doctoral thesis, Università degli studi di Trieste, 2010. http://hdl.handle.net/10077/3685.
Повний текст джерелаL'obiettivo di questa tesi è l'applicazione della spettroscopia di fotoemissione allo studio di nanoparticelle supportate e di sistemi a bassa dimensionalità. Ad una primo periodo dedicato allo sviluppo del rivelatore e del software per un nuovo analizzatore d'energia per elettroni installato presso la linea di luce SuperESCA ad Elettra, è seguita una fase durante la quale ho eseguito una serie di esperimenti mirati ad esplorare le potenzialità del nuovo apparato sperimentale. Il primo risultato ottenuto riguarda la comprensione della relazione che intercorre tra le variazioni della reattività chimica del sistema Pd/Ru(0001) e il numero degli strati di Pd cresciuti in modo pseudomorfico sul substrato di rutenio. La risoluzione temporale raggiunta con la nuova strumentazione ci ha permesso di studiare processi dinamici su una scala temporale fino ad ora inaccessibile per la spettroscopia di fotoemissione dai livelli di core: in particolare abbiamo studiato la crescita del grafene ad alta temperatura sulla superficie (111) dell'iridio e la reattività chimica di nanocluster di Pt supportati su MgO. Nel primo caso abbiamo messo in evidenza come la formazione del grafene proceda attraverso la nucleazione di nano-isole di carbonio che assumono una peculiare forma di cupola. Nel secondo caso siamo riusciti a seguire sia la dinamica del processo di adsorbimento di CO, sia la reazione CO + 1/2 O2 -> CO2 sulle nanoparticelle di Pt depositate su un film ultra-sottile di ossido di magnesio. Infine, abbiamo caratterizzato la morfologia di nanoparticelle di Pd, Pt, Rh e Au cresciute su diversi substrati a base di carbonio, in particolare grafite, nanotubi a parete singola e grafene. Tra i vari risultati abbiamo compreso come l'interazione metallo-substrato dipenda dalla dimensione delle nano-particelle e abbiamo evidenziato il ruolo centrale dei difetti del substrato nei processi di nucleazione e intercalazione.
The objective of this thesis is the application of photoelectron spectroscopy for the investigation of supported nanoclusters and low-dimensional systems. After a first stage devoted to the development of the detector and the software for the electron energy analyser installed on the SuperESCA beamline at Elettra, during the PhD project I've performed a series of experiments aimed to explore the capabilities of the new experimental apparatus. One of the first results concerns the understanding of the relation between the modifications in the chemical reactivity of the Pd/Ru(0001) system and the thickness of the pseudomorphically grown Pd overlayer. The temporal resolution achieved with the new experimental set-up allowed us to study dynamical processes on a new time scale, in particular the graphene growth process at high temperature on the Ir(111) surface and the chemical reactivity of Pt nanoclusters supported on MgO. In the former case, we discovered that graphene formation proceeds via preliminary nucleation of dome-shaped C nano-islands. In the second case, we succeded in following both the dynamics of CO adsorption process and the CO + 1/2 O2 -> CO2 reaction on Pt nanoclusters grown on a ultra-thin film of magnesium oxide. Finally, the morphology of Pd, Pt, Rh and Au nanoclusers grown on different carbon-based substrates (namely graphite, single-walled carbon nanotubes and graphene) has been characterized. Among the results we report the understanding of the dependence of the metal-substrate interaction on the cluster size and the role of defects in the nucleation and intercalation processes.
XXII Ciclo
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Han, Sanggil. "Cu2O thin films for p-type metal oxide thin film transistors." Thesis, University of Cambridge, 2018. https://www.repository.cam.ac.uk/handle/1810/285099.
Повний текст джерелаRossi, Leonardo. "Flexible oxide thin film transistors: fabrication and photoresponse." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2017. http://amslaurea.unibo.it/14542/.
Повний текст джерелаBarnes, Jean-Paul L. P. Barnes. "TEM studies of thin film oxide/metal nanocomposites." Thesis, University of Oxford, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.398136.
Повний текст джерелаLloyd, Adam L. "Modelling silver thin film growth on zinc oxide." Thesis, Loughborough University, 2017. https://dspace.lboro.ac.uk/2134/24860.
Повний текст джерелаYoung, Sheng-Yu. "DLC thin film assisted zinc oxide nanowires growth." College Park, Md.: University of Maryland, 2008. http://hdl.handle.net/1903/8613.
Повний текст джерелаThesis research directed by: Dept. of Materials Science and Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
Gavanier, Beatrice. "Stability of thin film insertion electrodes." Thesis, University of Southampton, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.324003.
Повний текст джерелаBenia, Hadj Mohamed. "Spatially resolved optical measurements on supported metal particles and oxide surfaces with the STM." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2008. http://dx.doi.org/10.18452/15862.
Повний текст джерелаIn this thesis, the correlation between the optical properties and the local morphology of supported silver nanoparticle ensembles and MgO thin films deposited on Mo(001) systems is explored by means of Photon-STM. In the first section, dome and disk shaped Ag nanoparticle ensembles with increasing density on an alumina film on NiAl(110) were analyzed as well as ordered and disordered ensembles of Ag nanocolloids on HOPG. The aspect ratio of the Ag nanoparticles was found to have a significant influence not only on the Mie plasmon resonance of a single particle, but also on the electromagnetic coupling within the nanoparticle ensembles. The Mie resonance in the ensemble of dome shaped Ag nanoparticles shows a strong dependence on the interparticle distance, where it shifts to higher energies with increasing particle density, due to destructive interference effects. In the disk-like Ag ensembles, however, the plasmon energy is independent of particle-particle separation. The long-range lateral ordering of size-selected Ag nanocolloids is found to induce a high dipole-dipole coupling within the ensemble. This is mainly reflected by the enhancement of the spectral intensity of the in-plane Mie mode, due to constructive coupling. However, ensembles with either well-ordered or disordered arrangements reveal no important difference in their optical properties, reflecting the weak influence of the long-range order in the particle ensemble. Thin MgO films with different thicknesses were grown on a Mo(001) surface. The stress resulting from the 5.3% lattice mismatch between the MgO(001) and the Mo(001) lattice parameters is found to control the surface morphology of the MgO film until thicknesses of around 25ML at which flat and defect-poor films are obtained. The relaxation of the stress induces a periodic network in the first 7ML of the MgO film, consisting of alternated flat and tilted mosaics. The presence of screw dislocations, steps oriented along the MgO directions, and tilted planes is observed when the MgO films are approximately 12ML thick. In addition, an increase of the MgO work function around these new surface features is revealed from STM spectroscopy. The photon emission induced by field-emitted electron injection from the STM tip into the MgO films is dominated by two emission bands located at 3.1eV and 4.4eV. To check the origin of these bands, further experiments, namely, nucleation of Au particles and creation of F-centers on the MgO surface, have been performed. The nucleation of Au particles at the low coordinated sites is found to quench the MgO optical signal, while the creation or annihilation of F-centers does not alter the MgO emission bands. The 3.1eV and the 4.4eV bands are therefore assigned to the radiative decay of MgO excitons at corner and kink sites, and step sites, respectively. Besides, spatially resolved optical measurements in the tunneling mode of the STM revealed different light emission mechanisms. These radiative processes are mainly related to tip-induced plasmons that form between the tip and the Mo support and to electron transitions between field-emission-resonance states in the STM tip-MgO film junction. The signal from exciton decays at corners and kinks of the MgO surface is however only observed at excitation conditions where the spatial resolution is already strongly reduced.
Beckel, Daniel. "Thin film cathodes for micro solid oxide fuel cells." kostenfrei, 2007. http://e-collection.ethbib.ethz.ch/view/eth:29741.
Повний текст джерелаBrown, J. R. "Tin oxide thin film gas sensors deposited by MOCVD." Thesis, Keele University, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.434038.
Повний текст джерелаLee, S. "Physics and modeling of oxide semiconductor thin film transistors." Thesis, University College London (University of London), 2013. http://discovery.ucl.ac.uk/1400467/.
Повний текст джерелаBarquinha, Pedro. "Transparent oxide thin-film transistors: production, characterization and integration." Doctoral thesis, Faculdade de Ciências e Tecnologia, 2010. http://hdl.handle.net/10362/5380.
Повний текст джерелаFlack, Natasha. "Thin film components for solid oxide fuel Cells (SOFCs)." Thesis, University of Liverpool, 2014. http://livrepository.liverpool.ac.uk/2007271/.
Повний текст джерелаAdam, Suhare A. "Thin Film Complex Oxide Proton Conductors: Synthesis and Applications." Thesis, Harvard University, 2016. http://nrs.harvard.edu/urn-3:HUL.InstRepos:33493335.
Повний текст джерелаEngineering and Applied Sciences - Applied Physics
Ozgit, Cagla. "Isochronal Hydrogenation Of Textured Magnesium/palladium Thin Films." Master's thesis, METU, 2009. http://etd.lib.metu.edu.tr/upload/12610385/index.pdf.
Повний текст джерела#8208
covered 350 nm thick magnesium thin films were deposited on glass substrates via thermal evaporation. In the as&
#8208
deposited state, films were highly textured with Mg (001) parallel to the substrate. Hydrogen loading experiments were carried out in two different conditions
namely isothermal and isochronal. Hydrogenation behaviors of the thin films were followed by twopoint probe electrical resistance and optical transmittance measurements, as well as x&
#8208
ray diffraction studies. Isothermal hydrogenation experiments conducted on Pd&
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covered Mg thin films have revealed that these films can absorb hydrogen at temperatures starting from 333 K, producing MgH2 with a random texture. When the films were heated slowly starting from the room temperature, on the other hand, hydrogenation gives rise to a textured MgH2, where (110) parallel to the substrate with a minor (101) component. Formation of the textured hydride in isochronal loading was discussed within the context of lattice mismatch in Mg to MgH2 transformation. It was further shown that formation of such a textured hydride in Mg thin films minimizes in&
#8208
plane lattice distortion.
Pecunia, Vincenzo. "Solution-based polymeric/metal-oxide thin-film transistors and complementary circuits." Thesis, University of Cambridge, 2014. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708401.
Повний текст джерелаREMONDINA, JACOPO. "Ga-rich oxide-in-oxide glass ceramics: from bulk to thin film devices." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2020. http://hdl.handle.net/10281/263429.
Повний текст джерелаIn this thesis I present the work I have carried out during my PhD on Ga-oxide containing nanostructured glass-ceramic films as a potential breakthrough for the implementation of this class of material in planar geometry for applications in the field of optoelectronics. In the last three years, my investigations have been aimed at understanding the relationship between the occurrence of nanostructuring – analysed through a detailed structural studies by means of different microscopy and diffractometric techniques as a function of deposition conditions and post-deposition treatments – and the physical mechanisms of charge transport and polarization taking place in oxide-in-oxide films. The studied material was produced by RF sputtering deposition starting from a glass target of Li, Na, Si, Ga and Ge mixed oxide. As a consequence of the deposition process we have obtained partially crystallized material with Ga-rich nanocrystals incorporated in the remaining amorphous matrix. Through atomic force microscopy, x-ray reflectivity, 2D-x-ray diffraction, 2D-small angle x-ray scattering - also employing synchrotron radiation facilities - we have fully characterized the nanostructured films at different length scales, from few nm to few microns. The detailed analysis of the results shows the formation of multiple anisotropic spinel Ga-oxide nanocrystals with size of about 3 nm, forming larger lenticular aggregates with significant differences between the in-plane and the out-of-plane dimensions. As a result of the investigation of differently treated samples, the study also shows that size distribution and morphology of the nanostructures can be controlled by deposition conditions, duration and temperature of post-deposition thermal treatments. Starting from the knowledge of the structural features, the research activity has been directed to the deep understanding of the charge transport properties resulting from the nanostructured nature of the material, including the Ga2O3 semiconductor nanophase and the dielectric host matrix. The electrical response – analysed with the aid of complex impedance spectroscopy – turns out to be the results of multiple contributions to transport and charging mechanisms by the matrix and the nanophase, including the effects of the internal interfaces. The data suggest that the charge transport is sustained by a combination of thermally activated hopping and tunnelling mechanisms mediated by the percolation path built up by the nanostructured features of the material. Interestingly, the overall response gives preliminary evidences of electrical plasticity, making nano-glassceramic thin films potential candidates as key systems in advanced devices for brain-inspired oxide-in-oxide fully inorganic memories.
Hu, Xiao. "Ultra-thin oxide films." Thesis, University of Oxford, 2016. https://ora.ox.ac.uk/objects/uuid:d7373376-84f1-459e-bffb-f16ce43f02b7.
Повний текст джерелаVempati, Sesha Pavan Kumar. "Thin film and nanostructures zinc oxide : characterisation and device applications." Thesis, Queen's University Belfast, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.580108.
Повний текст джерелаGolden, Stephen John. "Behaviour of thin film oxide based electrodes in electrochromic applications." Thesis, Imperial College London, 1988. http://hdl.handle.net/10044/1/47080.
Повний текст джерелаSimrick, Neil Jonathan. "Patterned thin film cathodes for micro-solid oxide fuel cells." Thesis, Imperial College London, 2010. http://hdl.handle.net/10044/1/11910.
Повний текст джерелаWilliams, Lizandra Clarissa. "Cathodoluminescence and degradation of oxide thin film and powder phosphors." [Gainesville, Fla.] : University of Florida, 2004. http://purl.fcla.edu/fcla/etd/UFE0008391.
Повний текст джерелаChiu, Chien-Ta, and 邱健達. "Study of Magnesium Oxide as Insulating Dielectric Thin Film by RF Magnetron Sputter." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/82607028834686025214.
Повний текст джерела龍華科技大學
電子工程系碩士班
104
MgO thin films were deposited using MgO ceramic target by RF magnetron sputter. The effects of both deposition pressure and annealing temperature on MgO dielectric property have been evaluated. MgO films were deposited pressure at 2 pa, 4 pa, 13 pa and 15 pa and annealed at 350 ℃, 450 ℃, 550 ℃, 650 ℃and 750 ℃ for 120 minutes. The results clearly show that the MgO film deposited at 13 pa and subsequently annealed at 450 ℃ exhibits the largest dielectric constant, which is 36 for 1KHz, respectively. Moreover, leakage current will increase as annealing temperature increasing. With 13 pa pressuring, the leakage current of BST films annealed at 450 ℃, 550 ℃, 650 and 700 ℃ is 2.1×10-7, 1.14×10-4, 4.4×10-5A/cm2 and 4.6×10-4 A/cm2, respectively.
Hung-HsuLin and 林泓旭. "Investigation of magnesium zinc oxide thin film transistors fabricated by sputtered system and their optoelectronic application." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/99837492176738674372.
Повний текст джерелаmiao, zheng-you, and 繆政佑. "The study of resistive switching properties and mechanisms of magnesium oxide thin films." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/8w3r6e.
Повний текст джерела國立高雄大學
應用物理學系碩士班
103
Recently, resistance random access memory (RRAM) have attracted much attention, magnesium oxide (MgO) thin films is one of the most important research. In this work, the MgO films were deposited on silicon substrates by using magnetron sputtering on a MgO target at room temperature. In the process, we used different work atmosphere (Ar,Ar+O2,Ar+N2). A thermal annealing was performed at 800℃ for 1 hour in nitrogen ambient. After experiment, we analyzed the physical characteristic, resistive switching properties and the conduction mechanisms. According to experimental results indicate that the resistive switching properties of MgO films deposited by adding nitrogen ambient is better than oxygen ambient. Besides, the MgO film structure (metal-insulator-semiconductor-MIS) displays bipolar resistance switching properties and also indicate that the conduction mechanisms in MgO films is dominated by the space-charge limited conduction and Ohmic conduction in high resistance state (HRS) and low resistance state (LRS), respectively. At least, we proposed here that the resistance change is due to the migration of oxygen vacancy (VOs).
Cheng-WeiLin and 林承緯. "Optoelectronic Properties on Indium-Magnesium-Oxide (MIO) Thin Film Transistors and Improvement by Using Cap Layer and Buffer Layer." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/56068341043983267045.
Повний текст джерела國立成功大學
微電子工程研究所
104
In this thesis, we utilize co-sputter system to prepare amorphous indium magnesium oxide (MIO) thin film; moreover, thin film transistors (TFTs) and UV phototransistors are fabricated and analyzed. First, we deposit a-MIO thin film on the glass substrate and investigate the properties of thin film with adjusting the power of the target. The result of materials analysis show amorphous structure and smooth surface. And then we demonstrate MSM UV photodetectors. It is found that the cutoff wavelength of the phototransistors can shift by changing the RF sputter power of the In2O3 target. With 3 V applied bias, it is found that measured cutoff wavelength are 315 nm, 330 nm, 340 nm, respectively. We have same results compared with the transmission spectrum analysis. In the second part of the experiment, the fabrication of thin film transistors and UV phototransistors are demonstrated by changing the power of targets. In our experiment, we totally realize nine different parameters of thin film transistors. The optimized device, sample E, exhibits the great properties with a μFE of 8.45 cm2/Vs, a SS of 0.43 V/decade, and an on/off current ratio of 4.1×106. And then we apply a-MIO thin film to the thin film transistors, it is found that the performance of the phototransistors are strongly dependent on the In2O3. The cutoff wavelength of the phototransistors is red-shift from 315 nm to 340 nm. The photo-responsivity and DUV-to-visible rejection ratio of the fabricated are 0.39 A/W and 3.1×103. At last, to further enhance the various electrical properties of thin film transistors, so we use two ways to improve. First, because the cuprous oxide is p-type semiconductor then we deposit it on the thin film transistors to be the cap layer. In this design, it is found that thin film transistors is enhanced for electrical properties and stability and it exhibits μFE of 29.8 cm2/Vs, a SS of 0.22 V/decade, and an on/off current ratio of 1.2×106. Compared with the sample E, it is found that we can achieve higher electrical properties. Second, the fabricated of a-MIO thin film transistors is inserted respectively two different buffer layer are demonstrated, and the thin film transistors with Al2O3 buffer layer has better electrical properties. The result can be contributed to the processing method of the buffer layer affects interface quality. As mentioned above two improvement methods, we know that it can enhance thin film transistors properties efficiently.
Lu, Ting-yi, and 呂婷以. "Preparation of Silicon Oxide Thin Film on AZ91D Magnesium Alloys by Atmospheric Pressure Plasma Jet and its anti-corrosion behavior." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/82283479123816164313.
Повний текст джерела國立臺灣科技大學
機械工程系
102
Magnesium alloys are used in many industries because of their excellent mechanical properties. Their high strength/weight ratio and excellent machinability make magnesium alloys ideal construction materials. In addition, the high recyclability of magnesium makes it very cost-effective for use in industrial manufacturing. However, poor corrosion resistance restricts the applications of magnesium and its alloys in marine environments and in biological applications. The ability to increase the corrosion resistance of magnesium and its alloys is crucial to increase the range of applications. This research aims to overcome this drawback by increasing corrosion resistance. We deposited silicon oxide (SiOx) thin film as an anticorrosion layer using atmospheric pressure plasma jet (APPJ) on AZ91D magnesium alloys. This process combines the benefits of the APPJ process and SiOx thin film. With a high deposition rate and clean dry process, the APPJ process is an excellent candidate for surface coating treatment. The results show that after ageing the SiOx thin films for at least 56 days, the SFE(surface free energy) of deposited SiOx thin films was lower compared to AZ91D alloy, and this resulted in a more hydrophobic surface, which helped to prevent corrosion. The surface morphologies of SiOx thin films were uniformly smooth and consisted of nano-scale silicon oxide particles, which agglomerated more closely with increasing O2 carrier gas flow rate. According to the results of ESCA and AES, the thin films were demonstrated to be carbon-free inorganic SiOx thin films and the O/Si ratio was extremely close to 2.0. From the AES depth profile, the thickness of the SiOx thin films ranged from 45 to 99 nm. The thickness was not directly proportional to the O2 carrier gas flow rate and this was attributed to the lack of energy such that the dissociation of the precursor monomer was inadequate, i.e. in the power deficient regime. The functional groups identified from FT-IR revealed that the degree of porosity of SiOx thin films depended on the cage structure, and this affected the corrosion resistance of SiOx thin films. The carrier gas flow rate evidently affected the quality of SiOX thin films in the APPJ process: 1. monomer deficient regime at lower carrier gas flow rate resulted in a hydrophilic surface; 2. power deficient regime at higher carrier gas flow rate resulted in a lower deposition rate. After corrosion measurement by potentiodynamic polarization tests in 3.5 wt% NaCl solution, the deposited SiOx thin film (O1800) revealed superior corrosion resistance in terms of corrosion potential (Ecorr= -1.28 V(Ag/AgCl)) and corrosion current (Icorr = 1.24 μA/cm2) compared to the AZ91D alloy (Ecorr= -1.46 V(Ag/AgCl), Icorr = 22.06 μA/cm2).
Pousaneh, Elaheh. "Synthesis and Characterization of Metal Complexes for Thin Film Formation via Spin-Coating or Chemical Vapor Deposition." 2019. https://monarch.qucosa.de/id/qucosa%3A72463.
Повний текст джерелаYekehtaz, Mehdi. "Evaluation of Porosity and Corrosion Protection Ability of Sol-Gel Deposited Oxide Thin Films on Magnesium." Phd thesis, 2010. https://tuprints.ulb.tu-darmstadt.de/2312/1/Mehdi_Yekehtaz.pdf.
Повний текст джерелаLo, Yu Hsin, and 羅煜欣. "Preparation and Applications of RF-Sputtered Transparent Conductive Thin Films of Aluminum-doped Magnesium Zinc Oxide." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/95050505582488352997.
Повний текст джерела長庚大學
化工與材料工程學系
99
The objectives of this research are to preare the ceramic targets of aluminum-doped magnesium zinc oxid (AMZO) by solid-state reactions and the thin films of AMZO by RF magnetron sputtering. In addition, the effects of the amount of alumina and magnesium dopant in the AMZO targets as well as other sputtering parameters on the electrical, optical, and structural properties of AMZO thin films was also investigated. Finally, AMZO thin film would be applied for CIGS solar cell. In the result, the Zn0.94Mg0.06O with 1 wt% Al2O3 at different sintering temperature exhibit the same hexagonal wurtzite ZnO structure. The lowest resistivity of 6.2×10-3 Ω-cm was abtained for the sintering of AMZO target at temperature of 1400℃ and less than 5% weight loss. It was also found that the AMZO ceramic targets with different Al2O3 or Mg contents at sintering temperature of 1400℃ excludes the possibility of ant extra phases. In conclusion, the resistivity and the relative density of the target by AMZO target were 2.6 x 10-3 Ω-cm and 98.46%, respectively. The best performance of the electricity could achieve under the hybrid amount of Al2O3 and the sintered temperature were 3 wt% and 1400 ℃, respectively. Following the application by the AMZO target, the thin films were prepared by RF sputtering system and subtract temperature, power and working pressure were be discussed of the thin film were studied. Compared to the performance of AMZO thin film, the resistivity, mobility concentration, mobility, average transmittance (400 -1200 nm ) and band gap were 1.7 x 10-3 Ω-cm, 3.25 x 1020 cm-3, 11.3 cm2/Vs, 93.1% and 3.68 eV, respectively, under the subtract temperature, power, working pressure and deposited minutes were 320℃, 80 W, 9 mtorr and 15 min, respectively. By implying the AMZO target with different amounts of Al2O3 wt%, compared to the electricity and the optic properties of the AMZO thin film, the best resistivity, mobility concentration, mobility, average transmittance ( 400 -1200 nm ) and band gap were 7.61 x 10-4 Ω-cm, 5.01 x 1020 cm-3, 16.4 cm2/Vs, 91.5% and 3.7 eV, respectively, by the AMZO target with 2 wt% Al2O3:Zn0.98Mg0.02O.
Jou, Jia Chiuan, and 周家全. "Preparation and Applications of RF-Sputtered Transparent Conductive Thin Films of Gallium-doped Magnesium Zinc Oxide." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/63310618514172458451.
Повний текст джерела長庚大學
化工與材料工程學系
100
The preparation of transparent conductive gallium-doped magnesium zinc oxide (GMZO) thin films with good near infrared transmission by radio frequency (RF) magnetron sputtering using a single GMZO ceramic target was explored In addition, the different of GMZO target conditions on the structural, electrical and optical properties on the RF-sputtered GMZO thin films was also investigated and sputtering processes prepared optimization GMZO transparent conductive film application in the CIGS solar cells. Then, the window on the component layer (buffer layer / intrinsic layer / transparent conductive layer) was optimized to increase the optical transmittance by the optical simulation software, increasing the efficiency of photoelectric conversion in the CIGS solar cells. This study results show that the ceramic target in GMZO, that in the amount of 3 wt% Ga2O3 and amount of 2 at% Mg doped with hexagonal wurtzite ZnO structure, the lowest resistivity of 1.2×10-3 Ω cm and the weight loss is less than 5% conditions was held at sintering conditions of a positive argon pressure of 50 kPa and the sintering temperature of 1400 ° C The preparation of the GMZO transparent thin film by RF magnetron sputtering method use to the above-mentioned preparation GMZO ceramic target, that was investigated the structure, electrical and optical properties. The sputtering process conditions on GMZO transparent conductive film structure has not changed much, their preferred orientations are (002) direction, and all belong to the ZnO wurtzite structure. Transparent conductive GMZO thin films with resistivity as low as 2.89 x10-4 Ω cm with a higher carrier concentration of 11.8 x1021 cm-3 and electron mobility of 18.2 cm2/ Vs, good near infrared transmittance (>89%) and bandgap value of about 3.73 eV were successfully prepared on glass substrates by single cathode RF magnetron sputtering using a GMZO ceramic target with the composition of 95 % Zn0.98Mg0.02O and 5 wt% Ga2O3 without post deposition annealing. The preparation of the window layer antireflection coating design and application to CIGS solar cell by using optical simulation software (Film Star) was explored. Finally, Anti-reflective coating was optimized and applied in window layer of CIGS solar cell. Experimental results show that the window layer penetration to enhance short-circuit current and the photoelectric conversion efficiency of CIGS solar photoelectric conversion element of the phenomenon of both increased. The maximum conversion efficiency was 8.22%,and short-circuit current increased 38 percent.
Yekehtaz, Mehdi [Verfasser]. "Evaluation of porosity and corrosion protection ability of sol-gel deposited oxide thin films on magnesium / eingereicht von Mehdi Yekehtaz." 2010. http://d-nb.info/1008094854/34.
Повний текст джерелаChen, Chih Hsiu, and 陳芝岫. "Preparation of RF-Sputtered Magnesium Zinc Oxide Thin Films and Their Applications as Buffer Layers in Cu(In,Ga)Se2 Solar Cells." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/25925693303105479719.
Повний текст джерела長庚大學
化工與材料工程學系
101
Magnesium zinc oxide (MgxZn1-xO ) thin films were prepared by RF- magnetron sputtering and attempted to used as buffer layer and intrinsic layer in Cu(In,Ga)Se2 solar cells. The effects of substrate temperature, sputtering power, working pressure, and oxygen flow rate on the structural, electrical and optical properties of Mg0.02Zn0.98O thin films were also investigated. Mg0.02Zn0.98O thin films with resistivity as low as 2.96 ×103 Ω-cm were obtained at the deposition condition of substrate temperature 150 ℃, sputtering power 40 W, working pressure 3 mtorr, pure Ar atmosphere with Ar flow arte being 10 sccm. By increasing the oxygen flow rate in the working gas, the resistivity of Mg0.02Zn0.98O thin films was found to increase. By using Mg0.02Zn0.98O thin films deposited without substrate being heated to replace CdS as buffer layer (CIGS/Mg0.02Zn0.98O/i-ZnO/GMZO) or ZnO as intrinsic layer (CIGS/CdS/Mg0.02Zn0.98O/GMZO), the photovoltaic conversion efficiencies of the CIGS solar cells were, respectively, 1.618% and 1.693%, which were better than that of the CIGS solar cells (1.363%) with the structure of CIGS/Mg0.02Zn0.98O/GMZO. However, by replacing Mg0.02Zn0.98O with Mg0.05Zn0.95O, the photovoltaic conversion efficiency of the CIGS solar cells with the structure of CIGS/Mg0.05Zn0.95O/GMZO improved to 3.513%.
YANG, FU-HAI, and 楊福海. "Studies on the Photoelectric Properties of Magnesium Tin Oxides Thin Films." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/4zue43.
Повний текст джерела國立虎尾科技大學
材料科學與工程系材料科學與綠色能源工程碩士班
106
In this study, MgO/SnO2 films were synthesized by the sol–gel and spin coating. The effects of electrolyte, various dopant species and contents, coating layers, and sintering temperatures on the structure, microstructure and photoelectric properties were investigated. The MgO/SnO2 composite films were formed after annealing at 400-600oC. It was observed that proper electrolyte concentration and sintering condition could improve the degradation efficiency of azo dyes AO7 and photoelectric conversion efficiency. After annealing at 800oC, the films began to form Mg2SnO4 structure. On annealing at 1200oC, Mg2SnO4 is the main crystalline phase with small trace of SnO2. Under UV excitation, Mn- and Ti-doped phosphor showed emission bands centering at 500 nm (green) and 440 nm (blue), respectively. Different concentrations of activators and coating layers affected the surface morphology and luminescence of films.
Jeong, Yongwoo. "Zinc oxide thin film transistors." 2007. http://proquest.umi.com/pqdweb?did=1320961681&sid=10&Fmt=2&clientId=39334&RQT=309&VName=PQD.
Повний текст джерелаTitle from PDF title page (viewed on Nov. 13, 2007) Available through UMI ProQuest Digital Dissertations. Thesis adviser: Anderson, Wayne A. Includes bibliographical references.
Cho, Sungmee. "Nanostructured Thin Film Electrolyte for Thin Film Solid Oxide Fuel Cells." Thesis, 2011. http://hdl.handle.net/1969.1/ETD-TAMU-2011-08-10145.
Повний текст джерела