Добірка наукової літератури з теми "Low temperature photoluminescence"
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Статті в журналах з теми "Low temperature photoluminescence"
Lacroix, Y., C. A. Tran, S. P. Watkins, and M. L. W. Thewalt. "Low‐temperature photoluminescence of epitaxial InAs." Journal of Applied Physics 80, no. 11 (December 1996): 6416–24. http://dx.doi.org/10.1063/1.363660.
Повний текст джерелаKini, R. N., A. Mascarenhas, R. France, and A. J. Ptak. "Low temperature photoluminescence from dilute bismides." Journal of Applied Physics 104, no. 11 (December 2008): 113534. http://dx.doi.org/10.1063/1.3041479.
Повний текст джерелаMisiewicz, J. "The low temperature photoluminescence in Zn3P2." Physica Status Solidi (a) 107, no. 1 (May 16, 1988): K65—K68. http://dx.doi.org/10.1002/pssa.2211070161.
Повний текст джерелаKim, Soo-Yong. "A Study on Phosphor Synthetic and Low Temperature Photoluminescence Spectrum." Journal of the Korean Institute of Illuminating and Electrical Installation Engineers 24, no. 4 (April 30, 2010): 10–16. http://dx.doi.org/10.5207/jieie.2010.24.4.010.
Повний текст джерелаKasai, Jun‐ichi, and Yoshifumi Katayama. "Low‐temperature micro‐photoluminescence using confocal microscopy." Review of Scientific Instruments 66, no. 7 (July 1995): 3738–43. http://dx.doi.org/10.1063/1.1145431.
Повний текст джерелаPickin, William. "Low-temperature photoluminescence spectrum of amorphous semiconductors." Physical Review B 40, no. 17 (December 15, 1989): 12030–33. http://dx.doi.org/10.1103/physrevb.40.12030.
Повний текст джерелаKovalev, D., J. Diener, H. Heckler, G. Polisski, N. Künzner, F. Koch, Al L. Efros, and M. Rosen. "Low-temperature photoluminescence upconversion in porous Si." Physical Review B 61, no. 23 (June 15, 2000): 15841–47. http://dx.doi.org/10.1103/physrevb.61.15841.
Повний текст джерелаChurmanov, V. N., N. B. Gruzdev, V. I. Sokolov, V. A. Pustovarov, V. Yu Ivanov, and N. A. Mironova-Ulmane. "Low-temperature photoluminescence in NixMg1−xO nanocrystals." Low Temperature Physics 41, no. 3 (March 2015): 233–35. http://dx.doi.org/10.1063/1.4915911.
Повний текст джерелаFeng, W., F. Chen, Q. Huang, and J. M. Zhou. "Photoluminescence of low-temperature multiple quantum wells." Journal of Crystal Growth 175-176 (May 1997): 1173–77. http://dx.doi.org/10.1016/s0022-0248(96)01041-x.
Повний текст джерелаLan, Y. C., X. L. Chen, Y. G. Cao, Y. P. Xu, L. D. Xun, T. Xu, and J. K. Liang. "Low-temperature synthesis and photoluminescence of AlN." Journal of Crystal Growth 207, no. 3 (December 1999): 247–50. http://dx.doi.org/10.1016/s0022-0248(99)00448-0.
Повний текст джерелаДисертації з теми "Low temperature photoluminescence"
Penwell, David James Kruger Michael B. "Photoluminescence of CdTe:In under high pressure and low temperature." Diss., UMK access, 2004.
Знайти повний текст джерела"A thesis in physics." Typescript. Advisor: Michael B. Kruger. Vita. Title from "catalog record" of the print edition Description based on contents viewed Feb. 28, 2006. Includes bibliographical references (leaves 32-33 ). Online version of the print edition.
Tsagli, Kelvin Xorla. "Temperature Dependence of Photoluminescence Spectra in Polystyrene." University of Akron / OhioLINK, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=akron1625744248503334.
Повний текст джерелаArmstrong, Helen. "Variable-temperature photoluminescence emission instrumentation and measurements on low yield metals." Thesis, Durham University, 2010. http://etheses.dur.ac.uk/374/.
Повний текст джерелаSullivan, Wayne. "A low temperature photoluminescence study of radiation induced defects in silicon carbide." Thesis, University of Bristol, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.435732.
Повний текст джерелаBanishev, A. A., A. A. Lotin, and A. F. Banishev. "Deformation Stimulated Luminescence of Nano-micro-parcticles SrAl2O4:(Eu2+, Dy3+) in a Matrix of Photopolymer and Creation of Sensor Elements of Mechanical Stresses." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35389.
Повний текст джерелаLama, Lars, and Axel Nordström. "Photoluminescence and AFM characterization of silicon nanocrystals prepared by low-temperature plasma enhanced chemical vapour depositon and annealing." Thesis, KTH, Fysik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-103001.
Повний текст джерелаVijarnwannaluk, Sathon. "Optical studies of GaAs:C grown at low temperature and of localized vibrations in normal GaAs:C." Diss., Virginia Tech, 2002. http://hdl.handle.net/10919/27491.
Повний текст джерелаPh. D.
Moroni, Didier. "Etude des proprietes optiques de semi-conducteurs composes iii-v et de puits quantiques par photoluminescence et excitation de la photoluminescence." Paris 6, 1987. http://www.theses.fr/1987PA066540.
Повний текст джерелаSyed, Abdul Samad. "Growth and Characterization of ZnO Nanostructures." Thesis, Linköpings universitet, Institutionen för fysik, kemi och biologi, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-72956.
Повний текст джерелаZoulis, Georgios. "Structural and optical characterization of SiC." Thesis, Montpellier 2, 2011. http://www.theses.fr/2011MON20015/document.
Повний текст джерелаThe main topic of this thesis is the structural and optical characterization of SiC samples. The samples were divided in three groups: bulk, thick and thin epilayers. The bulk samples were grown with the CF-PVT technique and used a modified crystal holder geometry. The objective was to filter the defects to and create high purity and quality seeds of 3C-SiC. The thick epilayers were grown with the sublimation epitaxy technique, trying to demonstrate the creation of low impurity n and p type layers for device applications. Finally the thin epilayers were grown with the vapour-liquid-solid technique and doped with Ga impurities in an effort to create either heavily p-type doped samples and components for white LED applications. The samples were studied with low temperature photoluminescence, micro-Raman, SIMS and transmission electron microscopy. With the help of these techniques it was possible to determine the impurity concentration and identif y the n or p character of these samples. A qualitative analysis of the quality of the samples was done using both the observation of the structural defects and the information from the optical characterization techniques. We were able to acquire information about physical parameters of 3C-SiC like the binding energy of Ga and Al, the Al bound exciton fine structure and the Al-N and Ga-N donor acceptor pair fine structure. The appearance of a new structural defect called the fourfold twin was observed and presented
Частини книг з теми "Low temperature photoluminescence"
Korn, T., G. Plechinger, S. Heydrich, F. X. Schrettenbrunner, J. Eroms, D. Weiss, and C. Schüller. "Optical Characterization, Low-Temperature Photoluminescence, and Photocarrier Dynamics in MoS2." In Lecture Notes in Nanoscale Science and Technology, 217–36. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-02850-7_8.
Повний текст джерелаKrotkus, A., S. Marcinkevičius, and R. Viselga. "Ultrafast Photoluminescence Decay in GaAs grown by Low-Temperature Molecular-Beam-Epitaxy." In Hot Carriers in Semiconductors, 113–15. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-0401-2_27.
Повний текст джерелаGlaser, E. R., B. V. Shanabrook, W. E. Carlos, Hun Jae Chung, Saurav Nigam, A. Y. Polyakov, and Marek Skowronski. "Conditions and Limitations of Using Low-Temperature Photoluminescence to Determine Residual Nitrogen Levels in Semi-Insulating SiC Substrates." In Silicon Carbide and Related Materials 2005, 613–16. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.613.
Повний текст джерелаSakai, K., K. Ishikura, A. Fukuyama, I. A. Palani, M. S. Ramachandra Rao, T. Okada, and T. Ikari. "Low-Temperature Photoluminescence of Sb-doped ZnO Nanowires Synthesized on Sb-coated Si Substrate by Chemical Vapor Deposition Method." In ZnO Nanocrystals and Allied Materials, 331–39. New Delhi: Springer India, 2013. http://dx.doi.org/10.1007/978-81-322-1160-0_16.
Повний текст джерелаYan, Feng, Robert P. Devaty, W. J. Choyke, A. Gali, Frank Schmid, Gerhard Pensl, and Günter Wagner. "Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC." In Materials Science Forum, 493–96. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.493.
Повний текст джерелаHaberstroh, Ch, R. Helbig, and S. Leibenzeder. "Low Temperature Photoluminescence of SiC: A Method for Material Characterization and the Influence of an Uniaxial Stress on the Spectra." In Springer Proceedings in Physics, 221–26. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-84804-9_33.
Повний текст джерелаMisiewicz, J. "The Low Temperature Photoluminescence in Zn 3 P 2." In May 16, 505–8. De Gruyter, 1988. http://dx.doi.org/10.1515/9783112495223-062.
Повний текст джерелаMugeński, E., and R. Cywiński. "Low-Temperature Photoluminescence of Eu2+ Aggregate Centres in NaCl Matrix." In March 1, 433–38. De Gruyter, 1985. http://dx.doi.org/10.1515/9783112494585-054.
Повний текст джерелаZhilyaev, Yu V., V. V. Krivolapchuk, A. V. Rodionov, V. V. Rossin, T. V. Rossina, and Yu N. Sveshnikov. "The Investigation of a Transition Layer in Epitaxial GaAs by the Low Temperature Photoluminescence Technique." In May 16, 481–84. De Gruyter, 1985. http://dx.doi.org/10.1515/9783112494646-058.
Повний текст джерелаBurke, M. G., W. J. Choyke, Z. C. Feng, and M. H. Hanes. "Characterization of defect structures in MBE-grown (001) CdTe films by TEM and low-temperature photoluminescence." In Microscopy of Semiconducting Materials, 1987, 147–52. CRC Press, 2020. http://dx.doi.org/10.1201/9781003069621-24.
Повний текст джерелаТези доповідей конференцій з теми "Low temperature photoluminescence"
Kobori, H., A. Shigetani, I. Umezu, and A. Sugimura. "Unusual Behavior on Line-Broadening of Photoluminescence Spectrum for Type-II Excitons in Highly Si-Doped GaAs/AlAs Short-Period-Superlattices." In LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24. AIP, 2006. http://dx.doi.org/10.1063/1.2355282.
Повний текст джерелаYung-Chiun Her, Jer-Yau Wu, Yan-Ru Lin, and Song-Yeu Tsai. "Low-Temperature Growth of SnO2Nanoblades and Their Photoluminescence Properties." In 2006 Sixth IEEE Conference on Nanotechnology. IEEE, 2006. http://dx.doi.org/10.1109/nano.2006.247738.
Повний текст джерелаNagao, Y., Y. Kuwamura, A. Nizamuddin, T. Nakahora, T. Hotani, N. Katsuki, and T. Katsuyama. "Low-temperature Photoluminescence Characteristics of GaAs Quantum-well Waveguides." In 2011 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2011. http://dx.doi.org/10.7567/ssdm.2011.p-7-14.
Повний текст джерелаSALAH, A., G. ABDEL FATTAH, Y. BADR, and I. K. ELZAWAWY. "RAMAN SPECTROSCOPY AND LOW TEMPERATURE PHOTOLUMINESCENCE ZnSexTe1-x TERNARY ALLOYS." In Proceedings of the Sixth International Conference. WORLD SCIENTIFIC, 2010. http://dx.doi.org/10.1142/9789812814609_0006.
Повний текст джерелаKoteles, Emil S., J. Y. Chi, and R. P. Holmstrom. "Low Temperature Photoluminescence Signature Of A Two-Dimensional Electron Gas." In Semiconductor Conferences, edited by Orest J. Glembocki, Fred H. Pollak, and Jin-Joo Song. SPIE, 1987. http://dx.doi.org/10.1117/12.940893.
Повний текст джерелаSALAH, A., G. ABDEL FATTAH, I. K. ELZAWAWY, and Y. BADR. "LOW TEMPERATURE PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY OF ZnSexTe1-x TERNARY ALLOYS." In Proceedings of the Third International Conference on Modern Trends in Physics Research. WORLD SCIENTIFIC, 2011. http://dx.doi.org/10.1142/9789814317511_0026.
Повний текст джерелаKobayashi, Toshihiko. "Low Temperature Photoluminescence Of GaAs/GaInP Heterostructures Measured Under Hydrostatic Pressure." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994413.
Повний текст джерелаWu, Zhao, Zhi-yong Zhang, Zhou-hu Deng, Xue-wen Wang, Jun-feng Yan, and Yun-jiang Ni. "Epitaxial growth of SiC films at low temperature and its photoluminescence." In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/icsict.2006.306598.
Повний текст джерелаBao, Xue J., Ralph B. James, C. Y. Hung, Tuviah E. Schlesinger, A. Y. Cheng, Carol Ortale, and Lodewijk Van den Berg. "Study of stoichiometry in mercuric iodide by low-temperature photoluminescence spectroscopy." In San Diego '92, edited by Richard B. Hoover. SPIE, 1993. http://dx.doi.org/10.1117/12.140487.
Повний текст джерелаAndrianov, A. V., A. O. Zakhra'in, and O. V. Aleksandrov. "Low temperature terahertz photoluminescence from silicon crystals at interband optical excitation." In 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). IEEE, 2017. http://dx.doi.org/10.1109/irmmw-thz.2017.8066940.
Повний текст джерелаЗвіти організацій з теми "Low temperature photoluminescence"
Roberts, Adam T., and Henry O. Everitt. Low Temperature Photoluminescence (PL) from High Electron Mobility Transistors (HEMTs). Fort Belvoir, VA: Defense Technical Information Center, March 2015. http://dx.doi.org/10.21236/ada614121.
Повний текст джерелаFolkes, P. A., J. Little, S. Svensson, and K. Olver. Low Temperature Photoluminescence and Leakage Current Characteristics of InAs-GaSb Superlattice Photodiodes. Fort Belvoir, VA: Defense Technical Information Center, September 2008. http://dx.doi.org/10.21236/ada486120.
Повний текст джерела