Дисертації з теми "Liquid phase exfoliation (LPE)"
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Eredia, Matilde. "2D materials : exfoliation in liquid-phase and electronics applications." Thesis, Strasbourg, 2019. http://www.theses.fr/2019STRAF008/document.
Повний текст джерелаThis thesis is devoted to the production in liquid-phase of two-dimensional materials, by using approaches that may enable mass production of graphene and related materials. We aim to overcome some issues that are critical for the processing and practical use of 2D materials-inks and to provide a deep understanding of the structure-properties relationship in such materials being mandatory steps toward their future applications. This thesis mainly focuses on ultrasound-induced liquid-phase exfoliation and electrochemical exfoliation of graphene and molybdenum disulfide, which have been chosen as prototypical 2D materials. The synthetic approaches have been combined with a multiscale physico-chemical and electrical characterization of the produced materials, by employing techniques such as AFM, XPS and Raman spectroscopy. Applications in the field of sensing and electronics have been explored and allowed to demonstrate that liquid-phase exfoliation approaches can be conveniently employed to achieve a fine control on the properties of 2D materials paving the way to their integration as active materials in novel multifunctional devices
Winchester, Andrew. "LIQUID PHASE EXFOLIATION OF 2D LAYERED MATERIALS AND THEIR APPLICATION." OpenSIUC, 2014. https://opensiuc.lib.siu.edu/theses/1417.
Повний текст джерелаKnick, Cory. "Modeling the Exfoliation Rate of Graphene Nanoplatelet Production and Application for Hydrogen Storage." Wright State University / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=wright1347767528.
Повний текст джерелаSynnatschke, Kevin [Verfasser], and Claudia [Akademischer Betreuer] Backes. "Liquid phase exfoliation and size dependent properties of van der Waals crystals / Kevin Synnatschke ; Betreuer: Claudia Backes." Heidelberg : Universitätsbibliothek Heidelberg, 2021. http://d-nb.info/1229695400/34.
Повний текст джерелаHaar, Sébastien. "Supramolecular approaches to graphene : generation of functional hybrid assemblies." Thesis, Strasbourg, 2015. http://www.theses.fr/2015STRAF040/document.
Повний текст джерелаThis thesis demonstrates the potential of exfoliation of the graphite in the liquid phase in order to obtain graphene sheets dispersed in an organic solvent. Thus the exfoliation mechanism has been studied, in particular, the influence of several parameters (temperature, power and solvents). The choice of parameters is actually crucial for the control of the process, and to obtain graphene sheets having a targeted size. It is therefore possible to manufacture nanosheets of several tens of nanometers, which in addition exhibit photoluminescence properties.In order to understand the exfoliation mechanism in liquid phase assisted by molecules, a new approach has been developed: the supramolecular approach. This approach is based on using a new type of surfactant. Indeed, the selected molecules carry a long alkyl chain. This chain is adsorbed on the surface of graphene and can stabilize the sheets during exfoliation. The influence of the size of the alkyl chain of these molecules during exfoliation was verified. Furthermore, these molecules have been equipped with various supramolecular functions, which can form dimers on the surface of graphene. The addition of these molecules not only increases exfoliation performance but also the number of mono-layers present in these dispersions. These dispersions have conductive properties when deposited on substrates. A new deposition method was developed to enhance and increase conductivity but also the percentage of transparency
Aranga, Raju Arun Prakash. "Production and applications of graphene and its composites." Thesis, University of Manchester, 2017. https://www.research.manchester.ac.uk/portal/en/theses/production-and-applications-of-graphene-and-its-composites(f9000ac1-84ad-41e3-872b-4d7afc80a509).html.
Повний текст джерелаBares, Hugo. "Fonctionnalisation chimique du graphène, : vers des matériaux bidimentionnels photo actifs pour la reconnaissance et l'électronique moléculaire." Thesis, Bordeaux, 2015. http://www.theses.fr/2015BORD0400/document.
Повний текст джерелаSince the discovery of the exciting properties of graphene, many techniques to produce and chemically modify graphene have been developed in order to expand and improve its properties in view of future applications. The study presented in this thesis focus on a process for the chemically-assisted exfoliation of graphite based on a reversible cycloaddition reaction. It relies on the Diels-Alder reaction between graphite and highly reactive masked diene, and it is effective even in solvents that are otherwise ineffective for exfoliation of graphite. Furthermore, it is possible to introduce functional groups on the diene, thereby enabling the tuning of the surface properties of graphene, as well as the post-functionalization of graphene sheets
Juhlin, Stina. "Evaulation of liquid-exfoliatedgraphene as additive in Ag-basedsliding contacts." Thesis, Uppsala universitet, Tillämpad materialvetenskap, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-353942.
Повний текст джерелаCamargo, Elaine Farneze de. "Obtenção do grafeno através da esfoliação em fase líquida do grafite." Universidade Presbiteriana Mackenzie, 2015. http://tede.mackenzie.br/jspui/handle/tede/1356.
Повний текст джерелаThe different methods of obtaining two-dimensional materials are being researched intensively, due to their promising physical and chemical properties. Among the methods of obtaining graphene, the liquid phase exfoliation (LPE) of graphite is proving to be a relatively simple and efficient process for the production of flakes of high quality and large scale. It is primarily based on the separation of the layers of graphite in liquids, such as common organic solvents and aqueous surfactant solutions. In this work the exfoliation of graphite was performed in liquid phase by sonication in aqueous suspension in the presence of an industrial reagent. A comparison with suspensions not using the polymeric surfactant indicates that its presence is necessary, because it prevents the re-agglomeration of the layers after sonication, through the multipolar and electrostatic repulsion mechanism. This result coincides with the reports of most recent works on liquid-phase exfoliation of graphite.
Os diferentes métodos de obtenção de materiais bidimensionais estão sendo pesquisados intensamente, devido a suas promissoras propriedades físicas e químicas. Entre os métodos de obtenção de grafeno, a esfoliação em fase líquida (LPE) de grafite está demonstrando ser um processo relativamente simples e eficaz de produção de flocos de alta qualidade e em larga escala. Ela se baseia principalmente na separação das camadas de grafite em líquidos, tais como solventes orgânicos comuns e soluções surfactantes aquosas. Neste trabalho foi realizada a esfoliação de grafite em fase líquida através da sonificação em suspensão aquosa em presença um reagente industrial. A comparação com resultados usando suspensões sem o agente surfactante polimérico indica que a presença deste é necessária, pois evita a reaglomeração das camadas após a sonificação, através do mecanismo de multipolo e repulsão eletrostática. Este resultado coincide com os reportes dos trabalhos mais recentes realizados sobre esfoliação em fase líquida de grafite.
Hrubý, Jakub. "Příprava a charakterizace hybridních materiálů na grafenové bázi." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2017. http://www.nusl.cz/ntk/nusl-318708.
Повний текст джерелаGiraud, Stephen. "Croissance de couches minces de silicium pour applications photovoltaïques par epitaxie en phase liquide par évaporation du solvant." Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENI057/document.
Повний текст джерелаCrystalline Si thin films on low-cost substrates are expected to be alternatives to bulk Si materials for PV applications. Liquid Phase Epitaxy (LPE) is one of the most suitable techniques for the growth of high quality Si layers since LPE is performed under almost equilibrium conditions. We investigated a growth technology which allows growing Si epitaxial thin films in steady temperature conditions through the control of solvent evaporation from a metallic melt saturated with silicon: Liquid Phase Epitaxy by Solvent Evaporation (LPESE). We studied the main requirements regarding selection of solvent, crucible and growth ambient, and a first experimental set up is designed. An analytical model is described and discussed, aiming to predict solvent evaporation and Si crystallization rate. Growth experiments are implemented with a vertical dipping system. Growth procedure is presented and the influence, on Si growth, of melt convection, temperature gradient in the melt and Si-M reactivity with the material crucible are discussed. Solutions are proposed to improve and optimise the growth conditions. Experimentally, Si thin films were grown from Sn-Si and In-Si solution at temperatures between 900 and 1200°C under high vacuum. We are able to achieve epitaxial layers of several micrometers thickness (20-40µm). The predicted solvent evaporation rate and Si growth rate are in agreement with the experimental measurements. Regarding the structural quality, it is comparable to the crystal quality of layers grown by LPE. With In and In(Ga) melts, we can obtain P-type epitaxial layers with doping level in the range 1017 at.cm3, which is of great interest for the fabrication of solar cells. Finally, the growth of Si thin films on multicrystalline Si substrates by LPESE is discussed to assess the potential application of this technique
Bansen, Roman. "Solution growth of polycrystalline silicon on glass using tin and indium as solvents." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät, 2016. http://dx.doi.org/10.18452/17557.
Повний текст джерелаThe subject of this thesis is the investigation of the growth of polycrystalline silicon on glass at low temperatures from metallic solutions in a two-step growth process. In the first process step, nanocrystalline Si (nc-Si) films are formed either by direct deposition on heated substrates, or by a metal-induced crystallization process, referred to as amorphous-liquid-crystalline (ALC) transition. In the second process step, these seed layers serve as templates for the growth of significantly larger Si crystallites by means of steady-state solution growth. Extensive parameter studies for the ALC process helped to bring down the process duration significantly. Characterization of the nc-Si seed layers, formed by direct deposition on heated substrates, showed that the layer is composed of individual seeds, embedded in a quasi-amorphous matrix. The oxidation of the seed layers prior to the second process step was found to be a major obstacle. The most successful solution has been an initial melt-back step. As the process is hard to control, though, a UV laser system has been developed and installed. First promising results show unobstructed epitaxial growth where the oxide has been removed. Steady-state solution growth on ALC seed layers was found to start from a few larger seed crystals, and then cover the surrounding areas by lateral overgrowth. Although crystallites with sizes of up to 50 micrometers were obtained, it was not yet possible to achieve full surface coverage with a continuous layer. By solution growth on nc-Si seed layers, however, it was eventually possible to achieve this goal. Continuous, polycrystalline Si layers were grown, on which all Si crystallites are interlocked. The growth experiments were accompanied by 3D simulations, in which e.g. different heater configurations have been simulated.
Carey, Tian. "Two-dimensional material inks and composites for printed electronics and energy." Thesis, University of Cambridge, 2018. https://www.repository.cam.ac.uk/handle/1810/275609.
Повний текст джерелаHUANG, CHONG-GUI, and 黃崇桂. "Liquid-phase-epitaxial(LPE) growth of Alx Ga(1-x)Sb and surface characterizations." Thesis, 1988. http://ndltd.ncl.edu.tw/handle/85549817562446261475.
Повний текст джерела國立成功大學
物理研究所
76
AlxGa(1-x)Sb半導體其能隙隨x值不同而從0.7eV改變至1.4eV,此種材料在光 電元件上之應用有極大的潛力。 本文討論以液相磊晶(LPE )技術中的超冷降溫法於銻化鎵基片上成長三種不同組成 的AlxGa(1-x)Sb,利用SEM (Scanning Electron Mircoscopy),EDAX(Energy Dis persion Analysis X-ray),測量磊晶層的特性並得到成長過程的最佳溫度曲線。X =0.12的樣品表面經1:1的鹽酸和甲醇處理得可得如鏡面般的平坦,從剖面的 SEM 相片中得知鋁之莫耳分率愈高時成長速率愈慢。經XPS(X-ray Photolectron Sp ectroscopy)的測量結果指出磊晶的表面是以氧化狀態存在。由PL(Photoluminesce nce) 的測試得知在不同組成下能隙的大小分別為X=0.06時Eg =0.85eV ,X=1.124,Eg =0.908eV;X=0.128,Eg =0.912eV; X=0.242,Eg =1.031eV,銻化鎵的Eg =0.8eV。
Chiang, Yu, and 蔣宇. "Synthesis and surface physical and chemical characterizations of phosphorene by liquid phase exfoliation." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/68511864682354422045.
Повний текст джерела國立中央大學
機械工程學系
105
Black phosphorus is one of the most stable allotropes of phosphorus, and its unique two-dimensional lamellar structure makes it have many excellent properties. The two-dimensional multilayer crystal structure of black phosphorus is similar to graphene, and the lamellar layer is bonded to each other by Van der Waals bonding. In early research, it is easy to tear off the nano-level black phosphorus by mechanical exfoliation process and the nano-level black phosphorus is called phosphorene. The band gap of phosphorene changes because of different numbers of its layers, and the adjustable range of band gap is greater than any of today’s transitional metal disulfide. Meanwhile, phosphorene is applied to electronic components with a high on-off ratio of 105, and carrier mobility of ~ 1000 cm2/Vs, both of which are excellent features required as logic devices. Phosphorene is a remarkable and novel two-dimensional material expected to replace silicon as the transporting channel of the semiconducting device. However, in the past studies, black phosphorus was prone to be oxidized easily in the atmosphere and this phenomenon was obviously observed on the few layers phosphorene, which results in deterioration of its intrinsic electrical transport properties. How to protect the black phosphorus without oxidation and maintain the excellently electrical property is an important issue. In addition, the process to quantify the synthesis of phosphorene is few to be researched, while the material properties are still at the researching stage. In this study, we obtained phosphorene by liquid phase exfoliation, and analyzed its material properties and stability. We used different solvents as exfoliation medium, and found that 1% sodium dodecyl sulfate (SDS) dissolved in deoxygenated water solvent can get a high productivity. The thickness of few layered phosphorene is about 6 nm. The uniformity in thickness of exfoliated phosphorene with SDS solvent is better than it with other solvents. In addition, the deterioration rate of phosphorene could be restrained by encapsulating electrochemical graphene with its excellent resistance of water and oxygen. The solution was prepared by mixing the solution with dimethylformamide (DMF) as the dispersion of phosphorene and graphene. Therefore, high quality phosphorene can be obtained by optimizing this synthesis method, the production of. Our study also demonstrates a process for the assembly of the phosphorene into a continuous film which is effective in retarding the oxidation of the phosphorene. The surface of the phosphorene film can maintain the intrinsic state, so that phosphorene can be protected within 60 days from the impact of oxidation. It is attractive and has benefit to form the continuous and large area film with a few layers of phosphorene for the applications of electrical devices in the future.
Lai, Guan-Jie, and 賴冠傑. "Improved photocatalytic H2 production of 2D WS2-MoS2 heterostructures via liquid phase exfoliation." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/8f75u7.
Повний текст джерелаJia-EnZeng and 曾家恩. "Study on fabrication and characterization of few-layers graphene by using liquid-phase exfoliation method." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/c7unz8.
Повний текст джерела國立成功大學
地球科學系
104
Graphene dispersions were produced by liquid-phase exfoliation method. Sonication of graphite powder in alcohol solution can yield graphene dispersions which contains numerous few-layers graphene sheets at micrometer scale, and they can be identified by the Raman spectroscopy and atomic force microscope (AFM). Raman spectroscopy analysis revealed two peaks at ~1580cm-1 and 2600~2700cm-1 called G peak and 2D peak, we focus on shape difference of 2D peak that can use to determine the graphene layers. The conductivity and concentration of dispersions is determined by the conductivity meter and visible absorbance via Lambert – Beer’s law (A=abc). It shows the yield of graphene is about 0.63%. In order to examine the stability of the graphene dispersions, the solution was placed for a month and the concentration variation was measured every interval. The experimental parameters are optimized by adjusting alcohol-water mixture proportion, sonication time, graphite mass and centrifugation speed. This study provides a green liquid-phase exfoliation method to prepare few-layers graphene with alcohol-water mixture.
"Liquid-Phase Exfoliation and Applications of Pristine Two-Dimensional Transition Metal Dichalcogenides and Metal Diborides." Doctoral diss., 2018. http://hdl.handle.net/2286/R.I.49195.
Повний текст джерелаDissertation/Thesis
Doctoral Dissertation Chemistry 2018
Bernardes, Adriana Filipe. "Liquid-phase exfoliation of highly oriented pyrolytic graphite and its oxidation by air-ozone atomization." Master's thesis, 2018. http://hdl.handle.net/10773/25595.
Повний текст джерелаCom vista a responder à procura de um método de produção de grafeno altamente rentável, versátil e amigo do ambiente, a Graphenest desenvolveu uma metodologia baseada numa exfolição em fase líquida que foi agora testada com recurso ao uso de uma matéria-prima diferente: grafite pirolitica altamente orientada (HOPG). Após a exfoliação, a dispersão de grafeno de multicamadas passou por uma etapa de atomização utilizando uma mistura de ar-ozono, por forma a se obter um material com um nível de oxidação superior. Para tal, o processo de exfoliação foi realizado, efetuando um desenho de experiências (DoE) que permitisse compreender o efeito de quatro variáveis distintas no rendimento da produção de grafeno: 1) temperatura; 2) densidade de potência do equipamento de ultrassons; 3) frequência do equipamento de ultrassons; e 4) concentração inicial de grafite dispersa. Todas as amostras foram caracterizadas por espectroscopia Raman e por Dispersão Dinâmica de Luz (DLS) com o objetivo de determinar as condições processuais que permitem a obtenção de particulas com tamanho lateral e espessura mais pequenas. Adicionalmente, a concentração de grafeno disperso após cada uma das corridas de exfoliação foi determinada por espectroscopia UVVis, após centrifugação com diferentes velocidades (1000, 2000 e 4000 rpm). Antes da etapa de atomização, as amostras com as caracteristicas pretendidas (menor dimensão lateral e espessura) foram caracterizadas por microscopia eletrónica de trasmissão (TEM). Relativamente às condições processuais, o DoE revelou que a combinação do nível mais baixo de cada variável em análise permitiu a produção de maior quantidade (maior rendimentos) e melhor qualidade (menor dimensão lateral e espessura) de partículas de grafeno. As amostras cristalinas de grafeno manifestaram natureza ultrafina e boa flexibilidade. De modo a se obter uma forma rápida e eficiente para a funcionalização deste nanomaterial, a produção de óxido de grafeno foi testada, recorrendo a uma mistura de gás ar-ozono durante o processo de atomização. Para avaliar a oxidação, uma determinada selecção de amostras foi atomizada com ar e paralelamente com uma mistura de ar-ozono. Essas amostras foram, de seguida, caracterizadas por espectroscopia de fotoeléctrones excitados por raios-X (XPS) e os resultados, embora, de certa forma, inconclusivos, revelaram uma oxidação residual.
Mestrado em Engenharia Química
Bao-YuChang and 張寶玉. "Layered MoS2 Prepared by Liquid Phase Exfoliation and Its Application to Room Temperature Gas Sensing." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/15211047669409288660.
Повний текст джерела國立成功大學
材料科學及工程學系
104
This study investigates room temperature gas sensing of MoS2 nanosheets synthesized by liquid phase exfoliation followed by annealing in oxygen atmosphere. Scanning electron microscopy images clearly showed that 45vol% ethanol could exfoliate bulk MoS2 into nanosheets. Raman spectrometry and ultraviolet-visible spectrometry also showed that 45vol% ethanol successfully exfoliated bulk MoS2 into few layers. The structure of MoS2 nanosheets was analyzed using Transmission electron microscopy. X-ray photoelectron spectroscopy clearly showed that Mo and S were partially oxidized. Using annealing in oxygen atmosphere, as surface modification, the performance of MoS2 gas sensing could be improved. Using oxidized MoS2 nanosheets, the sensitivity of 0.7ppm NH3 was enhanced from 8.1% to 8.6% at room temperature.
"Characterisation and crystal growth of GaAs and AlxGa1-xAs epilayers on [100] GaAs by liquid phase epitaxy (LPE)." Chinese University of Hong Kong, 1994. http://library.cuhk.edu.hk/record=b5895604.
Повний текст джерелаOn t.p., "x" and "1-x" are subscript.
Thesis (M.Phil.)--Chinese University of Hong Kong, 1994.
Includes bibliographical references (leaves [126]-[130]).
ACKNOWLEDGEMENT --- p.i
ABSTRACT --- p.ii
TABLE OF CONTENTS --- p.iii
Chapter Chapter 1 --- INTRODUCTION --- p.1
Chapter Chapter 2 --- THEORY --- p.3
Chapter 2.1 --- Fundamentals of GaAs and AlGaAs --- p.3
Chapter 2.1.1 --- Crystal structure and properties of GaAs --- p.4
Chapter 2.1.2 --- General properties of GaAs at 300K --- p.5
Chapter 2.1.3 --- Temperature dependence of bandgap for GaAs --- p.6
Chapter 2.1.4 --- Dopants of GaAs --- p.7
Chapter 2.1.5 --- Properties of AlGaAs --- p.8
Chapter 2.2 --- Phase Equilibrium of GaAs and AlGaAs --- p.10
Chapter 2.2.1 --- Phase diagram of Ga-As binary system --- p.11
Chapter 2.2.2 --- Phase diagram of Al-Ga-As ternary system --- p.13
Chapter 2.3 --- Principle of LPE growth --- p.17
Chapter 2.3.1 --- General concept of liquid phase epitaxy --- p.17
Chapter 2.3.2 --- Fundamental methods of LPE growth --- p.19
Chapter 2.4 --- Dopants in GaAs and AlGaAs system --- p.21
Chapter 2.4.1 --- Common dopants in GaAs --- p.22
Chapter 2.4.2 --- Tellurium in GaAs --- p.23
Chapter 2.4.3 --- Silicon in GaAs --- p.24
Chapter 2.4.4 --- Tellurium and Tin in AlGaAs --- p.26
Chapter Chapter 3 --- LPE SYSTEM FOR GaAs AND AlGaAs --- p.28
Chapter 3.1 --- Basic requirements for horizontal sliding LPE system --- p.30
Chapter 3.2 --- Cleaning process of the LPE system --- p.37
Chapter 3.2.1 --- Cleaning procedures of the quartz parts --- p.37
Chapter 3.2.2 --- Cleaning procedures of the stainless steel tubing --- p.38
Chapter 3.2.3 --- Cleaning procedures of the graphite boat --- p.39
Chapter 3.3 --- Final examination for LPE growth --- p.41
Chapter 3.3.1 --- Examining the sealing of the system --- p.41
Chapter 3.3.2 --- Examining the palladium hydrogen purifier --- p.41
Chapter 3.3.2.1 --- Measuring the dew point --- p.41
Chapter 3.3.2.2 --- Measuring the content of oxygen and nitrogen --- p.42
Chapter 3.3.3 --- Adjusting and measuring the isothermal zone in the fumace --- p.42
Chapter 3.3.4 --- Measuring of background impurity --- p.43
Chapter 3.3.5 --- Inspection of the operating chamber --- p.44
Chapter Chapter 4 --- EXPERIMENTALS --- p.45
Chapter 4.1 --- Determination of GaAs and AlGaAs content in the source melt --- p.45
Chapter 4.2 --- Calculation of GaAs and AlGaAs content in the source melt --- p.45
Chapter 4.3 --- Experimental determination of source melt composition --- p.48
Chapter 4.4 --- LPE growth method --- p.49
Chapter 4.5 --- Thickness control of LPE epilayers --- p.49
Chapter 4.6 --- Experimental procedures --- p.50
Chapter Chapter 5 --- RESULTS AND DISCUSSIONS --- p.63
Chapter 5.1 --- Growth condition studies of GaAs --- p.63
Chapter 5.1.1 --- Experimental --- p.63
Chapter 5.1.2 --- Phase equilibrium of GaAs in the range of 780 to 840 °C --- p.63
Chapter 5.1.3 --- Results of undoped GaAs epilayers --- p.67
Chapter 5.1.4 --- Results of Si doped GaAs epilayers --- p.72
Chapter 5.2 --- Growth condition studies of AlxGa1-xAs for x=0.1 to 09 --- p.73
Chapter 5.2.1 --- Phase equilibrium of AlxGa1-xAs for x=0.1 to 09 --- p.73
Chapter 5.2.2 --- Relation between saturation of solution and he flatness of interface between epilayer and substrate --- p.79
Chapter 5.2.3 --- Determination of composition x in AlxGa1-xAs --- p.82
Chapter 5.2.4 --- Relation between epilayer thickness and x in AlxGa1-xAs --- p.84
Chapter 5.3 --- High AlxGa1-xAs with x ´ 0.9 ° at 780 °C --- p.87
Chapter 5.3.1 --- Deposition rate of high AlxGa1-xAs epilayer versus cooling rate --- p.87
Chapter 5.3.2 --- Thickness profiles of epilayers versus cooling rate --- p.89
Chapter 5.3.3 --- Spectroscopic refractive index of high AlxGa1-xAs in the visible light spectrum --- p.94
Chapter 5.3.4 --- Rocking curves of high AlxGa1-xAs --- p.96
Chapter 5.4 --- Tellurium doped AlxGa1-xAs with x ranging from 0.1 to 09 --- p.98
Chapter 5.4.1 --- Carrier concentration versus composition x in AlxGa1-xAs --- p.98
Chapter 5.4.2 --- Carrier concentration of Al0.3Ga0.7As versus Te mole fraction --- p.100
Chapter 5.4.3 --- Donor activation energy of Te Versus x in AlxGa1-xAs --- p.102
Chapter 5.4.4 --- Refractive index of Te doped AlxGa1-xAs at 300K --- p.105
Chapter 5.4.5 --- Dependence of solubility upon Te doping level --- p.106
Chapter 5.5 --- Heavily tellurium doped Al0.3Ga0.7As --- p.107
Chapter 5.5.1 --- Diffractometry study of heavily Te doped Al0.3Ga0.7As --- p.108
Chapter 5.5.2 --- Morphological studies and interface studies of heavily Te doped Al0.3Ga0.7As --- p.112
Chapter Chapter 6 --- CONCLUSION --- p.119
APPENDIX Photoluminance Analysis at room temperature
REFERENCE
JIANG, MIN-YU, and 江旻諭. "The Synthesis of Graphene by Liquid Phase Exfoliation and Graphene Quantum Dots Fabricated by Ball-milling Technique." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/n2cc43.
Повний текст джерела國立中正大學
化學工程研究所
106
The study is divided into two parts. In the first part, we used liquid phase exfoliation to produce graphene. According to distinct operating time, we can observe different ultraviolent/visible spectrum, and linear relationship between operating time and the intensity of absorbance. By diluting the supernatant and comparing the results of uv-vis characterization, a calibration curve was obtained, and it can be served as quantitative indicator. From the results of TEM and AFM, the size of graphene was approximately 500 nm to 5 um, and height was about 1-10 layers graphene. In the second part, graphene quantum dots(GQDs) were derived from carbon black by ball-milling technique. A simple and innovative method was obtained, and we used the mixture of sodium carbonate and carbon nano-capsule to synthesize nanoscale carbon structure. From the observation of TEM, the size of GQDs ranged from 1 to 3.5 nm. GQDs exhibited lots of unique optical properties compared to graphene flakes, particular in PL performance. By PLE analysis, we realized that the band-gap of GQDs were about 3.95 eV.
"Characterization of Liquid-Phase Exfoliated Two-Dimensional Nanomaterials Derived from Non-van der Waals Solids." Doctoral diss., 2020. http://hdl.handle.net/2286/R.I.62946.
Повний текст джерелаDissertation/Thesis
Doctoral Dissertation Chemistry 2020
Souza, Gabriel Pires de. "2D Nanostructures of V2O5 for energy storage devices." Master's thesis, 2017. http://hdl.handle.net/10362/34364.
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