Увійти

Готові списки джерел за темами / Light Emitting Diode - Semiconductor Nanocrystals / Статті в журналах

Статті в журналах з теми "Light Emitting Diode - Semiconductor Nanocrystals"

Щоб переглянути інші типи публікацій з цієї теми, перейдіть за посиланням: Light Emitting Diode - Semiconductor Nanocrystals.

Автор: Grafiati

Опубліковано: 7 вересня 2023

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Ознайомтеся з топ-50 статей у журналах для дослідження на тему "Light Emitting Diode - Semiconductor Nanocrystals".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Переглядайте статті в журналах для різних дисциплін та оформлюйте правильно вашу бібліографію.

1

Park, Myeongjin, Seok-Heon Jung, Jaehoon Lim, Dae-Young Kim, Hee-Jin Kim, Seungyong Lee, Heeyoung Jung, Seonghoon Lee, Changhee Lee, and Jin-Kyun Lee. "Semiconductor nanocrystals in fluorous liquids for the construction of light-emitting diodes." Journal of Materials Chemistry C 3, no. 12 (2015): 2759–62. http://dx.doi.org/10.1039/c4tc02503b.

Повний текст джерела

Анотація:

Fluorous liquid-soluble semiconductor nanocrystals enable the solution-casting of inorganic films on top of an organic small-molecular hole-transporting layer, providing stacked structures suitable for light-emitting diode fabrication.

Стилі APA, Harvard, Vancouver, ISO та ін.

2

Rogach, Andrey L, Nikolai Gaponik, John M Lupton, Cristina Bertoni, Diego E Gallardo, Steve Dunn, Nello Li Pira, et al. "Light-Emitting Diodes with Semiconductor Nanocrystals." Angewandte Chemie International Edition 47, no. 35 (August 18, 2008): 6538–49. http://dx.doi.org/10.1002/anie.200705109.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

3

Li, Yanqin, Aurora Rizzo, Roberto Cingolani, and Giuseppe Gigli. "White-light-emitting diodes using semiconductor nanocrystals." Microchimica Acta 159, no. 3-4 (April 2, 2007): 207–15. http://dx.doi.org/10.1007/s00604-007-0740-0.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

4

Li, Yanqin, Aurora Rizzo, Roberto Cingolani, and Giuseppe Gigli. "White-light-emitting diodes using semiconductor nanocrystals." Microchimica Acta 160, no. 3 (March 2008): 385. http://dx.doi.org/10.1007/s00604-008-0953-x.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

5

Dai, Quanqin, Chad E. Duty, and Michael Z. Hu. "Semiconductor-Nanocrystals-Based White Light-Emitting Diodes." Small 6, no. 15 (July 2, 2010): 1577–88. http://dx.doi.org/10.1002/smll.201000144.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

6

Yu, Buyang, Chunfeng Zhang, Lan Chen, Zhengyuan Qin, Xinyu Huang, Xiaoyong Wang, and Min Xiao. "Ultrafast dynamics of photoexcited carriers in perovskite semiconductor nanocrystals." Nanophotonics 10, no. 8 (June 1, 2020): 1943–65. http://dx.doi.org/10.1515/nanoph-2020-0681.

Повний текст джерела

Анотація:

Abstract Perovskite semiconductor nanocrystals have emerged as a promising family of materials for optoelectronic applications including light-emitting diodes, lasers, light-to-electricity convertors and quantum light emitters. The performances of these devices are fundamentally dependent on different aspects of the excited-state dynamics in nanocrystals. Herein, we summarize the recent progress on the photoinduced carrier dynamics studied by a variety of time-resolved spectroscopic methods in perovskite nanocrystals. We review the dynamics of carrier generation, recombination and transport under different excitation densities and photon energies to show the pathways that underpin the photophysics for light-emitting diodes and solar cells. Then, we highlight the up-to-date spin dynamics and coherent exciton dynamics being manifested with the exciton fine levels in perovskite semiconductor nanocrystals which are essential for potential applications in quantum information technology. We also discuss the controversial results and the possible origins yet to be resolved. In-depth study toward a comprehensive picture of the excited-state dynamics in perovskite nanocrystals may provide the key knowledge of the device operation mechanism, enlighten the direction for device optimization and stimulate the adventure of new conceptual devices.

Стилі APA, Harvard, Vancouver, ISO та ін.

7

Chen, Ya-Ching, Cyuan-Bin Siao, Hong-Shuo Chen, Kuan-Wen Wang, and Shu-Ru Chung. "The application of Zn0.8Cd0.2S nanocrystals in white light emitting diodes devices." RSC Advances 5, no. 106 (2015): 87667–71. http://dx.doi.org/10.1039/c5ra15068j.

Повний текст джерела

Анотація:

In this study, colloidal ternary semiconductor Zn_0.8Cd_0.2S (ZnCdS) nanocrystals (NCs) with wide emission and high quantum yields (QYs) have been prepared and used as nanophosphors in white light emitting diodes (WLEDs).

Стилі APA, Harvard, Vancouver, ISO та ін.

8

Song, Tao, Fute Zhang, Xiaojuan Shen, Xiaohong Zhang, Xiulin Zhu, and Baoquan Sun. "Amorphous silicon as electron transport layer for colloidal semiconductor nanocrystals light emitting diode." Applied Physics Letters 95, no. 23 (December 7, 2009): 233502. http://dx.doi.org/10.1063/1.3269931.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

9

Erdem, Talha, and Hilmi Volkan Demir. "Color-Enrichment Semiconductor Nanocrystals for Biorhythm-Friendly Backlighting." Zeitschrift für Physikalische Chemie 232, no. 9-11 (August 28, 2018): 1457–68. http://dx.doi.org/10.1515/zpch-2018-1134.

Повний текст джерела

Анотація:

Abstract Nanocrystals (NCs) offer great opportunities for developing novel light-emitting devices possessing superior properties such as high quality indoor lighting, efficient outdoor lighting, and display backlighting with increased color definition. The narrow-band emission spectra of these materials also offer opportunities to protect the human daily biological rhythm against the adverse effects of display backlighting. For this purpose, here we address this problem using color converting NCs and analyzed the effect of the NC integrated color converting light-emitting diode (NC LED) backlight spectra on the human circadian rhythm. We employed the three existing models including the circadian light, the melanopic sensitivity function, and the circadian effect factor by simultaneously satisfying the National Television Standards Committee (NTSC) requirements. The results show that NC LED backlighting exhibits (i) 33% less disruption on the circadian cycle if the same color gamut of the commercially available YAG:Ce LED is targeted and (ii) 34% wider color gamut while causing 4.1% weaker disruption on the circadian rhythm compared to YAG:Ce LED backlight if the NTSC color gamut is fully reproduced. Furthermore, we found out that blue and green emission peaks have to be located at 465 with 30 nm bandwidth and at 535 nm with 20 nm bandwidth, respectively, for a circadian rhythm friendly design while the red component offers flexibility around the peak emission wavelength at 636 nm as opposed to the requirements of quality indoor lighting. These design considerations introduced as a new design perspective for the displays of future will help avoiding the disruption of the human circadian rhythm.

Стилі APA, Harvard, Vancouver, ISO та ін.

10

Guo, Yating, Feng Gao, Pan Huang, Rong Wu, Wanying Gu, Jing Wei, Fangze Liu, and Hongbo Li. "Light-Emitting Diodes Based on Two-Dimensional Nanoplatelets." Energy Material Advances 2022 (February 7, 2022): 1–24. http://dx.doi.org/10.34133/2022/9857943.

Повний текст джерела

Анотація:

Colloidal semiconductor nanocrystals (NCs) attract significant interest in recent years due to their narrow and tunable emission wavelength in the visible range, as well as high photoluminescence quantum yield (PLQY), which are highly desired in display technologies. The high-quality NCs have been recognized as vital luminescent materials in realizing next-generation display devices. With further development, NCs with near-unity PLQY have been successfully synthesized through engineering of the core/shell heterostructure. However, as the external quantum efficiency (EQE) of the nanocrystal light-emitting diodes (LEDs) approaches the theoretical limit of about 20%, the low out-coupling factor proposes a challenge of enhancing the performance of a device when using the spherical QDs. Hence, the anisotropic NCs like nanoplatelets (NPLs) are proposed as promising solutions to improve the performance of nanocrystal LEDs. In this review, we will summarize the synthetic strategies of two-dimensional (2D) NPLs at first. Then, we will introduce fundamental concepts of LEDs, the main approaches to realize LEDs based on nanoplatelets, and the recent progress. Finally, the challenges and opportunities of LEDs based on anisotropic NCs are also presented.

Стилі APA, Harvard, Vancouver, ISO та ін.

11

Zhang, Qiang, Cai-Feng Wang, Lu-Ting Ling, and Su Chen. "Fluorescent nanomaterial-derived white light-emitting diodes: what's going on." J. Mater. Chem. C 2, no. 22 (2014): 4358–73. http://dx.doi.org/10.1039/c4tc00048j.

Повний текст джерела

Анотація:

In this review, we highlight recent progress of fluorescent nanomaterial-derived white LEDs, including semiconductor nanocrystals or colloidal QD-based LEDs, carbon-based LEDs, silicon QD-based LEDs, and organic–inorganic fluorescent nanocomposite derived white LEDs.

Стилі APA, Harvard, Vancouver, ISO та ін.

12

Wang, Ying. "Luminescent CdTe and CdSe Semiconductor Nanocrystals: Preparation, Optical Properties and Applications." Journal of Nanoscience and Nanotechnology 8, no. 3 (March 1, 2008): 1068–91. http://dx.doi.org/10.1166/jnn.2008.18156.

Повний текст джерела

Анотація:

The novel optical and electrical properties of luminescent semiconductor nanocrystals are appealing for ultrasensitive multiplexing and multicolor applications in a variety of fields, such as biotechnology, nanoscale electronics, and opto-electronics. Luminescent CdSe and CdTe nanocrystals are archetypes for this dynamic research area and have gained interest from diverse research communities. In this review, we first describe the advances in preparation of size- and shape-controlled CdSe and CdTe semiconductor nanocrystals with the organometallic approach. This article gives particular focus to water soluble nanocrystals due to the increasing interest of using semiconductor nanocrystals for biological applications. Post-synthetic methods to obtain water solubility, the direct synthesis routes in aqueous medium, and the strategies to improve the photoluminescence efficiency in both organic and aqueous phase are discussed. The shape evolution in aqueous medium via self-organization of preformed nanoparticles is a versatile and powerful method for production of nanocrystals with different geometries, and some recent advances in this field are presented with a qualitative discussion on the mechanism. Some examples of CdSe and CdTe nanocrystals that have been applied successfully to problems in biosensing and bioimaging are introduced, which may profoundly impact biological and biomedical research. Finally we present the research on the use of luminescent semiconductor nanocrystals for construction of light emitting diodes, solar cells, and chemical sensors, which demonstrate that they are promising building blocks for next generation electronics.

Стилі APA, Harvard, Vancouver, ISO та ін.

13

Lin, Gong-Ru. "Spectroscopic Analysis on Metal-Oxide-Semiconductor Light-Emitting Diodes with Buried Si Nanocrystals and Nano-Pyramids in SiOx Film." Journal of Nanoscience and Nanotechnology 8, no. 3 (March 1, 2008): 1092–100. http://dx.doi.org/10.1166/jnn.2008.18157.

Повний текст джерела

Анотація:

The difference between the white and near-infrared electroluminescence of metal-oxide-semiconductor light-emitting diodes fabricated on 1,100 °C-annealed Si-rich SiOx/p-Si substrate with interfacial pyramidal Si dots (Si nano-pyramids)was characterized. By changing the substrate temperature and induced coupled plasma power during the plasma enhanced chemical vapor deposition of Si-rich SiOx films, the effects of the growth conditions on the defect- and Si nano-pyramid-related carrier transport and Si nanocrystal-related electroluminescence spectroscopy were also investigated. The annealed Si-rich SiOx/p-Si films grown at higher synthesized substrate temperate (350 °C)show the larger Si nano-pyramids precipitating near the Si/SiO2 interface. The indium tin oxide/Si-rich SiOx/p-Si/Al metal-oxide-semiconductor light-emitting diodes with Si-rich SiOx films exhibit different white-light electroluminescence spectra at wavelengths from 400 to 650 nm. The Si nanocrystal-related electroluminescence spectra at 650–850 nm are confirmed, whereas the electroluminescence spectra are shorter wavelengths is attributed to oxygen related defects. These defects become an electron-preferred transporting path within the Si-rich SiOx film, whose densities are decreased by increasing the substrate temperature or reducing the induced coupled plasma power. Defect-related white-light electroluminescence emits power for a relatively short lifetime. The lifetime can be lengthened and the electroluminescence power can be raised simultaneously by increasing deposition temperature to 350 °C and adjusting the induced coupled plasma power to a threshold of 30 W, which effectively increases the densities of Si nanocrystals and nano-pyramids in the Si-rich SiOx film with Si concentration of up to 40 at%. A nearly defect-free Si-rich SiOx sample can be grown under such conditions, which contributes to the most stable and largest near-infrared electroluminescence with the longest lifetime, although the power–current slope of purely Si nanopyramid related electroluminescence at near-infrared wavelengths is slightly lower.

Стилі APA, Harvard, Vancouver, ISO та ін.

14

Mueller, Alexander H., Melissa A. Petruska, Marc Achermann, Donald J. Werder, Elshan A. Akhadov, Daniel D. Koleske, Mark A. Hoffbauer, and Victor I. Klimov. "Multicolor Light-Emitting Diodes Based on Semiconductor Nanocrystals Encapsulated in GaN Charge Injection Layers." Nano Letters 5, no. 6 (June 2005): 1039–44. http://dx.doi.org/10.1021/nl050384x.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

15

Frolova, Elena, Tobias Otto, Nikolai Gaponik, and Vladimir Lesnyak. "Incorporation of CdTe Nanocrystals into Metal Oxide Matrices Towards Inorganic Nanocomposite Materials." Zeitschrift für Physikalische Chemie 232, no. 9-11 (August 28, 2018): 1335–52. http://dx.doi.org/10.1515/zpch-2018-1139.

Повний текст джерела

Анотація:

Abstract In this work we present a technique of incorporation of semiconductor CdTe nanocrystals (NCs) into metal oxide matrices prepared by inorganic sol-gel method. As the matrices, we chose alumina and aluminum tin oxide, which are optically transparent in the visible region. Among them the first is electrically insulating, while the second is conductive and thus can be used in optoelectronic devices. We found optimal synthetic parameters allowing us to maintain optical properties of the NCs in both matrices even after heating up to 150°C in air. Therefore, in our approach we overcame a common problem of degradation of the optical properties of semiconductor NCs in oxide matrices as a result of the incorporation and subsequent interaction with the matrix. The resulting materials were characterized in detail from the point of view of their optical and structural properties. Based on the results obtained, we suggest the formation mechanism of these materials. Semiconductor NCs embedded in robust and optically transparent metal oxides offer promising applications in optical switching, optical filtering, waveguides, light emitting diodes, and solar concentrators.

Стилі APA, Harvard, Vancouver, ISO та ін.

16

Mohamed, Walied A. A., Hala Abd El-Gawad, Saleh Mekkey, Hoda Galal, Hala Handal, Hanan Mousa, and Ammar Labib. "Quantum dots synthetization and future prospect applications." Nanotechnology Reviews 10, no. 1 (January 1, 2021): 1926–40. http://dx.doi.org/10.1515/ntrev-2021-0118.

Повний текст джерела

Анотація:

Abstract Quantum dots (QDs) are nanocrystals of a semiconductor material that exist in a size regime less than 10 nm. QDs have become promising nanoparticles for a wide variety of different applications. However, the major drawback of QDs is their potential toxicity. This review reports on some recent methods for the synthesis of QDs and explores their properties, structures, applications, and toxicity. QDs are extraordinary because their minute size produces a physically confined electron cloud, an effect known as the quantum confinement. Certainly, because of their special properties as they had a great unique optical, electronic, and chemical properties that were not observe in other materials. These unique properties of the QD are an attractive material for a variety of scientific and commercial applications, most of them recently been realized, such as biosensors, bioimaging, photodetectors, displays, solar cells, wastewater treatment, and quantum computers. Finally, but not the end, an interesting potential QD application in future perspectives will expect as light-emitting diode products, biomedical applications, and Li-Fi.

Стилі APA, Harvard, Vancouver, ISO та ін.

17

Kulakci, M., U. Serincan, and R. Turan. "Electroluminescence generated by a metal oxide semiconductor light emitting diode (MOS-LED) with Si nanocrystals embedded in SiO2layers by ion implantation." Semiconductor Science and Technology 21, no. 12 (September 25, 2006): 1527–32. http://dx.doi.org/10.1088/0268-1242/21/12/004.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

18

Guan, Zhongyuan, Fei Chen, Zhenyang Liu, Peiwen Lv, Mingjun Chen, Mingxuan Guo, Xu Li, Feng Teng, Song Chen, and Aiwei Tang. "Compositional engineering of multinary Cu–In–Zn-based semiconductor nanocrystals for efficient and solution-processed red-emitting quantum-dot light-emitting diodes." Organic Electronics 74 (November 2019): 46–51. http://dx.doi.org/10.1016/j.orgel.2019.06.024.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

19

Lin, Gong-Ru. "Spectroscopic Analysis on Metal-Oxide-Semiconductor Light-Emitting Diodes with Buried Si Nanocrystals and Nano-Pyramids in SiOx Film." Journal of Nanoscience and Nanotechnology 8, no. 3 (March 1, 2008): 1092–100. http://dx.doi.org/10.1166/jnn.2008.307.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

20

Thung, Yi Tian, Zitong Zhang, Fei Yan, Hilmi Volkan Demir, and Handong Sun. "Narrow electroluminescence in bromide ligand-capped cadmium chalcogenide nanoplatelets." Applied Physics Letters 120, no. 24 (June 13, 2022): 241105. http://dx.doi.org/10.1063/5.0094798.

Повний текст джерела

Анотація:

Colloidal zinc blende II–VI semiconductor nanoplatelets (NPLs) demonstrate as a promising class of materials for optoelectronic devices due to their unique excitonic characteristics, narrow emission linewidth, and quantum well-structure. Adopting heterostructures for these nanocrystals allows tuning of their optical features and enhances their photostability, photoluminescence (PL), quantum yield (QY), and color purity for further device integration. Exchanging of carboxylate capping ligands on top and bottom [001] facets of CdSe NPLs with halide ligands is an alternative to achieve the aims of spectral tunability and improve surface passivation, but to date there have been no reports on integrating the advantages of halide ligand exchanged CdSe NPLs for device fabrication. In this work, we demonstrate green electroluminescence (EL) of bromide ligand-capped CdSe NPLs as active emitters in an electrically driven light emitting diode (LED) with a low turn-on voltage of 3.0 V. We observed EL emission at 533.1 nm with a narrow linewidth of 19.4 nm, a maximum luminance of 1276 cd/m2, and the highest external quantum efficiency (EQE) of 0.803%. These results highlight the ability of halide ligand exchange in tuning the EL properties of CdSe NPL-LEDs and potential of bromide ligand-capped CdSe NPLs in contributing to the green emission region of NPL-LEDs, demonstrating its potential for future device integration and contribution to a high color rendering index of future NPL displays.

Стилі APA, Harvard, Vancouver, ISO та ін.

21

Roussel, Jimmy, A. J. Murray, John Rolley, D. Barrie Johnson, and L. E. Macaskie. "Biosynthesis of Zinc Sulfide Quantum Dots Using Waste Off-Gas from Metal Bioremediation Process." Advanced Materials Research 1130 (November 2015): 555–59. http://dx.doi.org/10.4028/www.scientific.net/amr.1130.555.

Повний текст джерела

Анотація:

Dissimilatory reduction of sulfate, mediated by various species of sulfate-reducing bacteria (SRB), can be used to remediate acid mine drainage (AMD). Hydrogen sulfide (H2S/HS-) generated by SRB can be used to remove toxic metals from AMD as sulfide biominerals. For this, SRB are usually housed in separate reactor vessels to those where metal sulfides are generated; H2S is delivered to AMD-containing vessels in solution or as a gas. This allows more controlled separation of metal precipitation and facilitates enhanced process control. Industries such as optoelectronics use quantum dots (QDs) in, for example, light emitting diodes and solar photovoltaics. QDs are nanocrystals with semiconductor bands that allow them to absorb light and re-emit it intensely at specific wavelength couples. Small nanoparticles have the possibility to get electrons shifted to a higher energy and then emit light during the relaxation phase. The QD elemental composition and the presence of doping agent determines its electronic band gaps and can be used to tune the QD to desired emission wavelengths. Traditional QD production at scale is costly and/or complex. Waste H2S gas from growth of SRB has been used to make zinc sulfide QDs which are indistinguishable from ’classically’ prepared counterparts with respect to their physical and optical properties. Clean recycling of minewater bioremediation process waste gas into high value QD product is described.

Стилі APA, Harvard, Vancouver, ISO та ін.

22

Erdem, Talha, and Hilmi Volkan Demir. "Colloidal nanocrystals for quality lighting and displays: milestones and recent developments." Nanophotonics 5, no. 1 (June 1, 2016): 74–95. http://dx.doi.org/10.1515/nanoph-2016-0009.

Повний текст джерела

Анотація:

AbstractRecent advances in colloidal synthesis of nanocrystals have enabled high-quality high-efficiency light-emitting diodes, displays with significantly broader color gamut, and optically-pumped lasers spanning the whole visible regime. Here we review these colloidal platforms covering the milestone studies together with recent developments. In the review, we focus on the devices made of colloidal quantum dots (nanocrystals), colloidal quantum rods (nanorods), and colloidal quantum wells (nanoplatelets) as well as those of solution processed perovskites and phosphor nanocrystals. The review starts with an introduction to colloidal nanocrystal photonics emphasizing the importance of colloidal materials for light-emitting devices. Subsequently,we continue with the summary of important reports on light-emitting diodes, in which colloids are used as the color converters and then as the emissive layers in electroluminescent devices. Also,we review the developments in color enrichment and electroluminescent displays. Next, we present a summary of important reports on the lasing of colloidal semiconductors. Finally, we summarize and conclude the review presenting a future outlook.

Стилі APA, Harvard, Vancouver, ISO та ін.

23

Wu, Fengbing, Dawei Zhang, Shuzhen Shang, Yiming Zhu, Songlin Zhuang, and Jian Xu. "Developing Quantum Dot Phosphor-Based Light-Emitting Diodes for Aviation Lighting Applications." Journal of Nanomaterials 2012 (2012): 1–5. http://dx.doi.org/10.1155/2012/629157.

Повний текст джерела

Анотація:

We have investigated the feasibility of employing quantum dot (QD) phosphor-based light-emitting diodes (LEDs) in aviation applications that request Night Vision Imaging Systems (NVIS) compliance. Our studies suggest that the emerging QD phosphor-based LED technology could potentially be superior to conventional aviation lighting technology by virtue of the marriage of tight spectral control and broad wavelength tunability. This largely arises from the fact that the optical properties of semiconductor nanocrystal QDs can be tailored by varying the nanocrystal size without any compositional changes. It is envisioned that the QD phosphor-based LEDs hold great potentials in cockpit illumination, back light sources of monitor screens, as well as the LED indicator lights of aviation panels.

Стилі APA, Harvard, Vancouver, ISO та ін.

24

Anni, Marco. "Polymer-II-VI Nanocrystals Blends: Basic Physics and Device Applications to Lasers and LEDs." Nanomaterials 9, no. 7 (July 19, 2019): 1036. http://dx.doi.org/10.3390/nano9071036.

Повний текст джерела

Анотація:

Hybrid thin films that combine organic conjugated molecules and semiconductors nanocrystals (NCs) have been deeply investigated in the previous years, due to their capability to provide an extremely broad tuning of their electronic and optical properties. In this paper we review the main aspects of the basic physics of the organic–inorganic interaction and the actual state of the art of lasers and light emitting diodes based on hybrid active materials.

Стилі APA, Harvard, Vancouver, ISO та ін.

25

Pradhan, Narayan, and D. D. Sarma. "Advances in Light-Emitting Doped Semiconductor Nanocrystals." Journal of Physical Chemistry Letters 2, no. 21 (October 25, 2011): 2818–26. http://dx.doi.org/10.1021/jz201132s.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

26

Wang, Xiaoqian, Wanli Liu, Jiazhen He, Yuqing Li, and Yong Liu. "Synthesis of All-Inorganic Halide Perovskite Nanocrystals for Potential Photoelectric Catalysis Applications." Catalysts 13, no. 7 (June 27, 2023): 1041. http://dx.doi.org/10.3390/catal13071041.

Повний текст джерела

Анотація:

Compared with conventional semiconductors, halide perovskite nanocrystals (NCs) have a unique crystal structure and outstanding optoelectronic properties, offering wide potential for applications in optoelectronic devices such as solar cells, photodetectors, light-emitting diodes, lasers, and displays. Rational technological design is providing vital support for the development of perovskite optoelectronics. Herein, monodisperse all-inorganic halide perovskite nanocrystals with consistent morphology and cubic crystal phase were synthesized employing a modified one-pot hot injection method to independently modulate the stoichiometric ratios of three precursors involving cesium salt, lead source, and halide. In combination with an anion exchange reaction, mixing two kinds of perovskite NCs with different halogens enables a transition from violet emission to green and finally to red emission over the entire visible region. Additionally, optical and electrochemical tests suggested that the as-synthesized halide perovskite NCs are promising for photoelectric catalysis applications.

Стилі APA, Harvard, Vancouver, ISO та ін.

27

Todescato, Francesco, Ilaria Fortunati, Alessandro Minotto, Raffaella Signorini, Jacek Jasieniak, and Renato Bozio. "Engineering of Semiconductor Nanocrystals for Light Emitting Applications." Materials 9, no. 8 (August 9, 2016): 672. http://dx.doi.org/10.3390/ma9080672.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

28

Mal’tsev, E. I., D. A. Lypenko, O. M. Perelygina, V. F. Ivanov, O. L. Gribkova, M. A. Brusentseva, and A. V. Vannikov. "Molecular nanocrystals in polyaniline-based light-emitting diode structures." Protection of Metals 44, no. 5 (September 2008): 443–46. http://dx.doi.org/10.1134/s0033173208050044.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

29

Saunina A. Yu., Tkach A. A., Alexandrov A. E., Lypenko D. A., Nikitenko V. R., Nabiev I. R., and Samokhvalov P. S. "Luminance and efficiency of a light-emitting diode with transport-blocking poly(methyl methacrylate) layers and quantum dots: theoretical model, experiment, optimization." Technical Physics Letters 48, no. 4 (2022): 7. http://dx.doi.org/10.21883/tpl.2022.04.53160.19064.

Повний текст джерела

Анотація:

The results of studies of the influence of the thicknesses of the electron-blocking, hole-conducting and recombination layers on the luminance-voltage and other electrophysical characteristics of a multilayer light-emitting diode with an active layer based on semiconductor quantum dots are presented. Optimized thicknesses and voltages are determined to achieve the maximum efficiency of electroluminescence of the light-emitting diode. Keywords: quantum dots, light-emitting diode, blocking layer.

Стилі APA, Harvard, Vancouver, ISO та ін.

30

Xue, Xiayan, Yuchen Zhang, Chi Zhang, Zhiyuan Yu, Fengyang Ma, Shuai Li, and Ming Lu. "Dispersed freestanding silicon nanocrystals for Si white light-emitting diode." Chemical Physics Letters 785 (December 2021): 139155. http://dx.doi.org/10.1016/j.cplett.2021.139155.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

31

Du, Xiafang, Guan Wu, Jian Cheng, Hui Dang, Kangzhe Ma, Ya-Wen Zhang, Peng-Feng Tan, and Su Chen. "High-quality CsPbBr3 perovskite nanocrystals for quantum dot light-emitting diodes." RSC Advances 7, no. 17 (2017): 10391–96. http://dx.doi.org/10.1039/c6ra27665b.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

32

Roither, J., W. Heiss, N. P. Gaponik, D. V. Talapin, and A. Eychmüller. "Colloidally synthesised semiconductor nanocrystals in resonant cavity light emitting devices." Electronics Letters 38, no. 22 (2002): 1373. http://dx.doi.org/10.1049/el:20020890.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

33

Manago, T., and H. Akinaga. "Spin-polarized light-emitting diode using metal/insulator/semiconductor structures." Applied Physics Letters 81, no. 4 (July 22, 2002): 694–96. http://dx.doi.org/10.1063/1.1496493.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

34

Tsiminis, Georgios, Yue Wang, Alexander L. Kanibolotsky, Anto R. Inigo, Peter J. Skabara, Ifor D. W. Samuel, and Graham A. Turnbull. "Nanoimprinted Organic Semiconductor Laser Pumped by a Light-Emitting Diode." Advanced Materials 25, no. 20 (April 12, 2013): 2826–30. http://dx.doi.org/10.1002/adma.201205096.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

35

Саунина, А. Ю., А. A. Ткач, А. Е. Александров, Д. А. Лыпенко, В. Р. Никитенко, И. Р. Набиев та П. С. Самохвалов. "Яркость и эффективность светодиода с транспортно-блокирующими слоями полиметилметакрилата и квантовыми точками: теоретическая модель, эксперимент, оптимизация". Письма в журнал технической физики 48, № 7 (2022): 8. http://dx.doi.org/10.21883/pjtf.2022.07.52284.19064.

Повний текст джерела

Анотація:

The results of studies of the influence of the thicknesses of the electron-blocking, hole-conducting and recombination layers on the luminance-voltage and other electrophysical characteristics of a multilayer light-emitting diode with an active layer based on semiconductor quantum dots are presented. Optimized thicknesses and voltages are determined to achieve the maximum efficiency of electroluminescence of the light-emitting diode.

Стилі APA, Harvard, Vancouver, ISO та ін.

36

Holonyak, Nick. "The Semiconductor p–n Junction “Ultimate Lamp”." MRS Bulletin 30, no. 7 (July 2005): 515–17. http://dx.doi.org/10.1557/mrs2005.143.

Повний текст джерела

Анотація:

AbstractSimple diagrams are used to show the transformation of a thin sample of intrinsic, direct-gap semiconductor from an ideal “flat-band” photopumped recombination-radiation light source into a current-driven, p–n junction “ultimate lamp,” a light-emitting diode.

Стилі APA, Harvard, Vancouver, ISO та ін.

37

He, Miao, Chunyun Wang, Jingzhou Li, Jiang Wu, Siwei Zhang, Hao-Chung Kuo, Liyang Shao, et al. "CsPbBr3–Cs4PbBr6 composite nanocrystals for highly efficient pure green light emission." Nanoscale 11, no. 47 (2019): 22899–906. http://dx.doi.org/10.1039/c9nr07096f.

Повний текст джерела

Анотація:

All-inorganic perovskite CsPbBr₃–Cs₄PbBr₆ composite nanocrystals (NCs) were synthesized via a convenient solution process without inert gas protection and systematically studied as green phosphors for light emitting diode (LED) applications.

Стилі APA, Harvard, Vancouver, ISO та ін.

38

Xin, Jianhui, Peifu Sun, Feng Zhu, Yue Wang, and Donghang Yan. "Doped crystalline thin-film deep-blue organic light-emitting diodes." Journal of Materials Chemistry C 9, no. 7 (2021): 2236–42. http://dx.doi.org/10.1039/d0tc05934j.

Повний текст джерела

Анотація:

A doped crystalline thin-film deep-blue organic light-emitting diode (C-OLED) with high photon output and a low driving voltage is created through employing highly ordered and high-mobility organic semiconductor layers.

Стилі APA, Harvard, Vancouver, ISO та ін.

39

Yamamoto, Aishi. "Studies on New Light Emitting Materials Using Environmentally Friendly Semiconductor Nanocrystals." Hosokawa Powder Technology Foundation ANNUAL REPORT 12 (2004): 36–41. http://dx.doi.org/10.14356/hptf.02101.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

40

Jun, Shinae, Eunjoo Jang, Jongjin Park, and Jongmin Kim. "Photopatterned Semiconductor Nanocrystals and Their Electroluminescence from Hybrid Light-Emitting Devices." Langmuir 22, no. 6 (March 2006): 2407–10. http://dx.doi.org/10.1021/la051756k.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

41

Yamada, Hiroyuki, Junpei Watanabe, Kazuhiro Nemoto, Hong-Tao Sun, and Naoto Shirahata. "Postproduction Approach to Enhance the External Quantum Efficiency for Red Light-Emitting Diodes Based on Silicon Nanocrystals." Nanomaterials 12, no. 23 (December 5, 2022): 4314. http://dx.doi.org/10.3390/nano12234314.

Повний текст джерела

Анотація:

Despite bulk crystals of silicon (Si) being indirect bandgap semiconductors, their quantum dots (QDs) exhibit the superior photoluminescence (PL) properties including high quantum yield (PLQY > 50%) and spectral tunability in a broad wavelength range. Nevertheless, their low optical absorbance character inhibits the bright emission from the SiQDs for phosphor-type light emitting diodes (LEDs). In contrast, a strong electroluminescence is potentially given by serving SiQDs as an emissive layer of current-driven LEDs with (Si-QLEDs) because the charged carriers are supplied from electrodes unlike absorption of light. Herein, we report that the external quantum efficiency (EQE) of Si-QLED was enhanced up to 12.2% by postproduction effect which induced by continuously applied voltage at 5 V for 9 h. The active layer consisted of SiQDs with a diameter of 2.0 nm. Observation of the cross-section of the multilayer QLEDs device revealed that the interparticle distance between adjacent SiQDs in the emissive layer is reduced to 0.95 nm from 1.54 nm by “post-electric-annealing”. The shortened distance was effective in promoting charge injection into the emission layer, leading improvement of the EQE.

Стилі APA, Harvard, Vancouver, ISO та ін.

42

Li, Kai, Zhi You Guo, Mei Jiao Li, and Ming Jun Zhu. "Modeling of Vertical GaN Based Resonant Cavity Light-Emitting Diode." Applied Mechanics and Materials 389 (August 2013): 409–14. http://dx.doi.org/10.4028/www.scientific.net/amm.389.409.

Повний текст джерела

Анотація:

Vertical structure of resonant cavity light-emitting diode (RCLED) is presented in this paper to further improve the photoelectric performance of the device. Modeling and 2D simulation have been proceeded with Crosslight APSYS[, the analysis and modeling software for semiconductor devices. Main results of the simulation are listed and discussed. The peak wavelength locates at about 550 nm with half-wave width of about 10 nm and its output power has been enhanced by 25% than the conventional one. The results prove that vertical RCLED is a considerable source for POF-based fiber communication.

Стилі APA, Harvard, Vancouver, ISO та ін.

43

Ved M. V., Dorokhin M. V., Lesnikov V. P., Kudrin A. V., Demina P. B., Zdoroveyshchev A. V., and Danilov Yu. A. "Circularly polarized electroluminescence at room temperature in heterostructures based on GaAs:Fe diluted magnetic semiconductor." Technical Physics Letters 48, no. 13 (2022): 76. http://dx.doi.org/10.21883/tpl.2022.13.53370.18836.

Повний текст джерела

Анотація:

In this work, we demonstrate the possibility of using a diluted magnetic semiconductor GaAs:Fe as a ferromagnetic injector in a spin light-emitting diode based on a GaAs/InGaAs quantum well heterostructure. It is shown that in such a device it is possible to observe partially circularly polarized electroluminescence at room temperature. Keywords: spin light-emitting diodes, diluted magnetic semiconductors, A3B5 semiconductors, spin injection.

Стилі APA, Harvard, Vancouver, ISO та ін.

44

Menezes, Shalini, Anura P. Samantilleke, Sharmila J. Menezes, Yi Mo, and David S. Albin. "Electrodeposition of poly and nanocrystalline Cu-In-Se absorbers for optoelectronic devices." MRS Advances 4, no. 37 (2019): 2043–52. http://dx.doi.org/10.1557/adv.2019.319.

Повний текст джерела

Анотація:

ABSTRACTCoupling semiconductors with electrochemical processes can lead to unusual materials, and attractive, practical device configurations. This work examines the reaction mechanism for single-step electrodeposition approach that creates device quality copper-indium-selenide (CISe) films with either polycrystalline or nanocrystalline morphologies on Cu and steel foils, respectively. The polycrystalline CISe film grows from In3+/Se4+ solution on Cu foil as Cu→ CuxSe→ CuInSe2; it may be used in standard planar pn devices. The nanocrystalline CISe film grown from Cu+/In3+/Se4+ solution follows the CuSe(In)→ CuInSe2→ CuIn3Se5 sequence. The latter approach leads to naturally ordered, space-filling nanocrystals, comprising interconnected 3-dimensional network of sharp, abrupt, p-CISe/n-CISe bulk homojunctions with extraordinary electro-optical attributes. Sandwiching these films between band-aligned contact electrodes can lead to high performance third generation devices for solar cells, light emitting diodes or photoelectrodes for fuel cells. Both approaches produce self-stabilized CISe absorbers that avoid recrystallization steps and can be roll-to-roll processed in simple flexible thin-film form factor for easy scale-up.

Стилі APA, Harvard, Vancouver, ISO та ін.

45

Anutgan, Mustafa, Tamila Anutgan, and Ismail Atilgan. "SEM, EDX spectroscopy and real-time optical microscopy of electroformed silicon nitride-based light emitting memory device." European Physical Journal Applied Physics 89, no. 1 (January 2020): 10303. http://dx.doi.org/10.1051/epjap/2020190300.

Повний текст джерела

Анотація:

An ordinary amorphous silicon nitride-based p-i-n diode was electroformed under optimized process conditions, which led to its instant transformation to a semiconductor device with two-in-one properties: a bright visible light emitting diode and a resistive memory switching device; i.e. light emitting memory (LEM). In the present work, for a thorough understanding of the changes that occur during electroforming, SEM images and EDX analyses were performed on both top-view and cross-section of both as-deposited and electroformed diodes. It was seen from the top-view images that while the diode surface of the as-deposited diode had a smooth and homogeneous ITO top electrode, the electroformed diode exhibited a rough ITO surface. EDX analyses showed that ITO was completely removed from many point-like regions on the diode surface. Cross-sectional SEM images showed no clue of any material diffusion through the diode structure during electroforming, which was one of the suspected situations about our model. EDX results also showed no considerable increase of any of the ingredients of the ITO alloy (In, Sn or O) across the semiconductor (p-i-n) layers of the electroformed diode. In contrast to the roughened surface of the electroformed diode, the silicon-based layers of the diode below the ITO electrode seemed to be well-preserved. Real-time optical microscopy showed that the light is emitted through the regions of the diode surface where the residual ITO top electrode is present.

Стилі APA, Harvard, Vancouver, ISO та ін.

46

Canham, Leigh. "Progress Toward Crystalline-Silicon-Based Light-Emitting Diodes." MRS Bulletin 18, no. 7 (July 1993): 22–28. http://dx.doi.org/10.1557/s0883769400037490.

Повний текст джерела

Анотація:

The semiconductor silicon is the dominant material in microelectronics and is one of the best-studied materials known to humanity. Its inability to emit light efficiently is therefore well documented. Nevertheless, a “holy grail” of semiconductor materials research has for decades been the realization of an efficient Si light-emitting diode (LED). Such a device would enable optoelectronic circuitry to be based entirely on silicon and would revolutionize VLSI technology since the other required Si-based devices (detectors, waveguides, modulators, etc.) have already been demonstrated. Although this holy grail has proved elusive, the 1990s have heralded greatly renewed interest and optimism in the development of such devices for both the visible and near-infrared spectral ranges. Dramatic progress is at last being made. This review focuses, in a somewhat chronological manner, on the progress of specific approaches to realizing crystalline structures of high radiative efficiency, and the materials constraints involved.

Стилі APA, Harvard, Vancouver, ISO та ін.

47

Huang, Shouqiang, Zhichun Li, Bo Wang, Nanwen Zhu, Congyang Zhang, Long Kong, Qi Zhang, Aidang Shan, and Liang Li. "Morphology Evolution and Degradation of CsPbBr3 Nanocrystals under Blue Light-Emitting Diode Illumination." ACS Applied Materials & Interfaces 9, no. 8 (February 17, 2017): 7249–58. http://dx.doi.org/10.1021/acsami.6b14423.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

48

Yao, Qingkai, Yu Ding, Guodong Liu, and Lvming Zeng. "Low-cost photoacoustic imaging systems based on laser diode and light-emitting diode excitation." Journal of Innovative Optical Health Sciences 10, no. 04 (May 16, 2017): 1730003. http://dx.doi.org/10.1142/s1793545817300038.

Повний текст джерела

Анотація:

Photoacoustic imaging, an emerging biomedical imaging modality, holds great promise for preclinical and clinical researches. It combines the high optical contrast and high ultrasound resolution by converting laser excitation into ultrasonic emission. In order to generate photoacoustic signal efficiently, bulky Q-switched solid-state laser systems are most commonly used as excitation sources and hence limit its commercialization. As an alternative, the miniaturized semiconductor laser system has the advantages of being inexpensive, compact, and robust, which makes a significant effect on production-forming design. It is also desirable to obtain a wavelength in a wide range from visible to near-infrared spectrum for multispectral applications. Focussing on practical aspect, this paper reviews the state-of-the-art developments of low-cost photoacoustic system with laser diode and light-emitting diode excitation source and highlights a few representative installations in the past decade.

Стилі APA, Harvard, Vancouver, ISO та ін.

49

El-Ghoroury, Hussein S., Mikhail V. Kisin, and Chih-Li Chuang. "III-Nitride Multi-Quantum-Well Light Emitting Structures with Selective Carrier Injection." Applied Sciences 9, no. 18 (September 15, 2019): 3872. http://dx.doi.org/10.3390/app9183872.

Повний текст джерела

Анотація:

Incorporation into the multi-layered active region of a semiconductor light-emitting structure specially designed intermediate carrier blocking layers (IBLs) allows efficient control over the carrier injection distribution across the structure’s active region to match the application-driven device injection characteristics. This approach has been successfully applied to control the color characteristics of monolithic multi-color light-emitting diodes (LEDs). We further exemplify the method’s versatility by demonstrating the IBL design of III-nitride multiple-quantum-well (MQW) light-emitting diode with active quantum wells uniformly populated at LED operational current.

Стилі APA, Harvard, Vancouver, ISO та ін.

50

Sun, Teng, Dongke Li, Jiaming Chen, Yuhao Wang, Junnan Han, Ting Zhu, Wei Li, Jun Xu, and Kunji Chen. "Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode." Nanomaterials 13, no. 6 (March 20, 2023): 1109. http://dx.doi.org/10.3390/nano13061109.

Повний текст джерела

Анотація:

Developing high-performance Si-based light-emitting devices is the key step to realizing all-Si-based optical telecommunication. Usually, silica (SiO2) as the host matrix is used to passivate silicon nanocrystals, and a strong quantum confinement effect can be observed due to the large band offset between Si and SiO2 (~8.9 eV). Here, for further development of device properties, we fabricate Si nanocrystals (NCs)/SiC multilayers and study the changes in photoelectric properties of the LEDs induced by P dopants. PL peaks centered at 500 nm, 650 nm and 800 nm can be detected, which are attributed to surface states between SiC and Si NCs, amorphous SiC and Si NCs, respectively. PL intensities are first enhanced and then decreased after introducing P dopants. It is believed that the enhancement is due to passivation of the Si dangling bonds at the surface of Si NCs, while the suppression is ascribed to enhanced Auger recombination and new defects induced by excessive P dopants. Un-doped and P-doped LEDs based on Si NCs/SiC multilayers are fabricated and the performance is enhanced greatly after doping. As fitted, emission peaks near 500 nm and 750 nm can be detected. The current density-voltage properties indicate that the carrier transport process is dominated by FN tunneling mechanisms, while the linear relationship between the integrated EL intensity and injection current illustrates that the EL mechanism is attributed to recombination of electron–hole pairs at Si NCs induced by bipolar injection. After doping, the integrated EL intensities are enhanced by about an order of magnitude, indicating that EQE is greatly improved.

Стилі APA, Harvard, Vancouver, ISO та ін.

Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!