Готові списки джерел за темами / Light Emitting Diode - Semiconductor Nanocrystals

Добірка наукової літератури з теми "Light Emitting Diode - Semiconductor Nanocrystals"

Автор: Grafiati
Опубліковано: 7 вересня 2023

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Статті в журналах з теми "Light Emitting Diode - Semiconductor Nanocrystals"

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Park, Myeongjin, Seok-Heon Jung, Jaehoon Lim, Dae-Young Kim, Hee-Jin Kim, Seungyong Lee, Heeyoung Jung, Seonghoon Lee, Changhee Lee, and Jin-Kyun Lee. "Semiconductor nanocrystals in fluorous liquids for the construction of light-emitting diodes." Journal of Materials Chemistry C 3, no. 12 (2015): 2759–62. http://dx.doi.org/10.1039/c4tc02503b.

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Fluorous liquid-soluble semiconductor nanocrystals enable the solution-casting of inorganic films on top of an organic small-molecular hole-transporting layer, providing stacked structures suitable for light-emitting diode fabrication.
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Rogach, Andrey L, Nikolai Gaponik, John M Lupton, Cristina Bertoni, Diego E Gallardo, Steve Dunn, Nello Li Pira, et al. "Light-Emitting Diodes with Semiconductor Nanocrystals." Angewandte Chemie International Edition 47, no. 35 (August 18, 2008): 6538–49. http://dx.doi.org/10.1002/anie.200705109.

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Li, Yanqin, Aurora Rizzo, Roberto Cingolani, and Giuseppe Gigli. "White-light-emitting diodes using semiconductor nanocrystals." Microchimica Acta 159, no. 3-4 (April 2, 2007): 207–15. http://dx.doi.org/10.1007/s00604-007-0740-0.

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Li, Yanqin, Aurora Rizzo, Roberto Cingolani, and Giuseppe Gigli. "White-light-emitting diodes using semiconductor nanocrystals." Microchimica Acta 160, no. 3 (March 2008): 385. http://dx.doi.org/10.1007/s00604-008-0953-x.

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Dai, Quanqin, Chad E. Duty, and Michael Z. Hu. "Semiconductor-Nanocrystals-Based White Light-Emitting Diodes." Small 6, no. 15 (July 2, 2010): 1577–88. http://dx.doi.org/10.1002/smll.201000144.

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Yu, Buyang, Chunfeng Zhang, Lan Chen, Zhengyuan Qin, Xinyu Huang, Xiaoyong Wang, and Min Xiao. "Ultrafast dynamics of photoexcited carriers in perovskite semiconductor nanocrystals." Nanophotonics 10, no. 8 (June 1, 2020): 1943–65. http://dx.doi.org/10.1515/nanoph-2020-0681.

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Abstract Perovskite semiconductor nanocrystals have emerged as a promising family of materials for optoelectronic applications including light-emitting diodes, lasers, light-to-electricity convertors and quantum light emitters. The performances of these devices are fundamentally dependent on different aspects of the excited-state dynamics in nanocrystals. Herein, we summarize the recent progress on the photoinduced carrier dynamics studied by a variety of time-resolved spectroscopic methods in perovskite nanocrystals. We review the dynamics of carrier generation, recombination and transport under different excitation densities and photon energies to show the pathways that underpin the photophysics for light-emitting diodes and solar cells. Then, we highlight the up-to-date spin dynamics and coherent exciton dynamics being manifested with the exciton fine levels in perovskite semiconductor nanocrystals which are essential for potential applications in quantum information technology. We also discuss the controversial results and the possible origins yet to be resolved. In-depth study toward a comprehensive picture of the excited-state dynamics in perovskite nanocrystals may provide the key knowledge of the device operation mechanism, enlighten the direction for device optimization and stimulate the adventure of new conceptual devices.
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Chen, Ya-Ching, Cyuan-Bin Siao, Hong-Shuo Chen, Kuan-Wen Wang, and Shu-Ru Chung. "The application of Zn0.8Cd0.2S nanocrystals in white light emitting diodes devices." RSC Advances 5, no. 106 (2015): 87667–71. http://dx.doi.org/10.1039/c5ra15068j.

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In this study, colloidal ternary semiconductor Zn0.8Cd0.2S (ZnCdS) nanocrystals (NCs) with wide emission and high quantum yields (QYs) have been prepared and used as nanophosphors in white light emitting diodes (WLEDs).
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Song, Tao, Fute Zhang, Xiaojuan Shen, Xiaohong Zhang, Xiulin Zhu, and Baoquan Sun. "Amorphous silicon as electron transport layer for colloidal semiconductor nanocrystals light emitting diode." Applied Physics Letters 95, no. 23 (December 7, 2009): 233502. http://dx.doi.org/10.1063/1.3269931.

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Erdem, Talha, and Hilmi Volkan Demir. "Color-Enrichment Semiconductor Nanocrystals for Biorhythm-Friendly Backlighting." Zeitschrift für Physikalische Chemie 232, no. 9-11 (August 28, 2018): 1457–68. http://dx.doi.org/10.1515/zpch-2018-1134.

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Abstract Nanocrystals (NCs) offer great opportunities for developing novel light-emitting devices possessing superior properties such as high quality indoor lighting, efficient outdoor lighting, and display backlighting with increased color definition. The narrow-band emission spectra of these materials also offer opportunities to protect the human daily biological rhythm against the adverse effects of display backlighting. For this purpose, here we address this problem using color converting NCs and analyzed the effect of the NC integrated color converting light-emitting diode (NC LED) backlight spectra on the human circadian rhythm. We employed the three existing models including the circadian light, the melanopic sensitivity function, and the circadian effect factor by simultaneously satisfying the National Television Standards Committee (NTSC) requirements. The results show that NC LED backlighting exhibits (i) 33% less disruption on the circadian cycle if the same color gamut of the commercially available YAG:Ce LED is targeted and (ii) 34% wider color gamut while causing 4.1% weaker disruption on the circadian rhythm compared to YAG:Ce LED backlight if the NTSC color gamut is fully reproduced. Furthermore, we found out that blue and green emission peaks have to be located at 465 with 30 nm bandwidth and at 535 nm with 20 nm bandwidth, respectively, for a circadian rhythm friendly design while the red component offers flexibility around the peak emission wavelength at 636 nm as opposed to the requirements of quality indoor lighting. These design considerations introduced as a new design perspective for the displays of future will help avoiding the disruption of the human circadian rhythm.
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Guo, Yating, Feng Gao, Pan Huang, Rong Wu, Wanying Gu, Jing Wei, Fangze Liu, and Hongbo Li. "Light-Emitting Diodes Based on Two-Dimensional Nanoplatelets." Energy Material Advances 2022 (February 7, 2022): 1–24. http://dx.doi.org/10.34133/2022/9857943.

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Colloidal semiconductor nanocrystals (NCs) attract significant interest in recent years due to their narrow and tunable emission wavelength in the visible range, as well as high photoluminescence quantum yield (PLQY), which are highly desired in display technologies. The high-quality NCs have been recognized as vital luminescent materials in realizing next-generation display devices. With further development, NCs with near-unity PLQY have been successfully synthesized through engineering of the core/shell heterostructure. However, as the external quantum efficiency (EQE) of the nanocrystal light-emitting diodes (LEDs) approaches the theoretical limit of about 20%, the low out-coupling factor proposes a challenge of enhancing the performance of a device when using the spherical QDs. Hence, the anisotropic NCs like nanoplatelets (NPLs) are proposed as promising solutions to improve the performance of nanocrystal LEDs. In this review, we will summarize the synthetic strategies of two-dimensional (2D) NPLs at first. Then, we will introduce fundamental concepts of LEDs, the main approaches to realize LEDs based on nanoplatelets, and the recent progress. Finally, the challenges and opportunities of LEDs based on anisotropic NCs are also presented.
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Дисертації з теми "Light Emitting Diode - Semiconductor Nanocrystals"

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Huang, Hao Ph D. Massachusetts Institute of Technology. "Colloidal semiconductor nanocrystals as nanoscale emissive probes in light emitting diodes and cell biology." Thesis, Massachusetts Institute of Technology, 2008. http://hdl.handle.net/1721.1/43760.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemistry, 2008.
Vita.
Includes bibliographical references.
This thesis employs colloidal semiconductor nanocrystals (NCs) as nanoscale emissive probes to investigate the physics of light emitting diodes (LEDs), as well as to unveil properties of cells that conventional imaging techniques cannot reveal. On the LED side, in particular, Chapter 2 utilizes individual NCs to alter layered organic LED structures at nanometer scale, resulting in spectrally resolved electroluminescence from single colloidal CdSe/ZnS (core/shell) NCs at room temperature. Chapter 3 takes NCs as emissive probes in layered organic LEDs, and shows that the photoluminescence of single NCs is bias dependent which helps elucidate the interactions between NCs and organic semiconductors, knowledge useful for designing efficient NC organic optoelectronics. Instead of using a planar LED geometry, Chapter 4 presents a technique for making nanoscale gap LEDs which allow the spectrally coincidental photoluminescence and electroluminescence from NCs. The work investigates the interactions between NCs and different metal gaps, and suggests electromigrating leads made of different metals as a promising route to fabricating nanoscale gaps with workfunction offsets for optoelectronic devices. On the cell biology side, we develop a three-dimensional sub-diffraction limited single fluorophore imaging method for proteins labeled with NCs. Chapter 5 applies the method to measure the endothelial glycocalyx thickness in vitro for the first time, by labeling different proteins with NCs of different emission wavelengths. Taking a step further, Chapter 6 utilizes the NC based imaging method to investigate the flow induced dynamics of endothelial glycocalyx, and measures the shear modulus of glycocalyx.
by Hao Huang.
Ph.D.
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Hafiz, Shopan d. "Optical investigations of InGaN heterostructures and GeSn nanocrystals for photonic and phononic applications: light emitting diodes and phonon cavities." VCU Scholars Compass, 2016. http://scholarscompass.vcu.edu/etd/4199.

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InGaN heterostructures are at the core of blue light emitting diodes (LEDs) which are the basic building blocks for energy efficient and environment friendly modern white light generating sources. Through quantum confinement and electronic band structure tuning on the opposite end of the spectrum, Ge1−xSnx alloys have recently attracted significant interest due to its potential role as a silicon compatible infra-red (IR) optical material for photodetectors and LEDs owing to transition to direct bandgap with increasing Sn. This thesis is dedicated to establishing an understanding of the optical processes and carrier dynamics in InGaN heterostructures for achieving more efficient visible light emitters and terahertz generating nanocavities and in colloidal Ge1−xSnx quantum dots (QDs) for developing efficient silicon compatible optoelectronics. To alleviate the electron overflow, which through strong experimental evidence is revealed to be the dominating mechanism responsible for efficiency degradation at high injection in InGaN based blue LEDs, different strategies involving electron injectors and optimized active regions have been developed. Effectiveness of optimum electron injector (EI) layers in reducing electron overflow and increasing quantum efficiency of InGaN based LEDs was demonstrated by photoluminescence (PL) and electroluminescence spectroscopy along with numerical simulations. Increasing the two-layer EI thickness in double heterostructure LEDs substantially reduced the electron overflow and increased external quantum efficiency (EQE) by three fold. By incorporating δ p-doped InGaN barriers in multiple quantum well (MQW) LEDs, 20% enhancement in EQE was achieved due to improved hole injection without degrading the layer quality. Carrier diffusion length, an important physical parameter that directly affects the performance of optoelectronic devices, was measured in epitaxial GaN using PL spectroscopy. The obtained diffusion lengths at room temperature in p- and n-type GaN were 93±7 nm and 432±30 nm, respectively. Moreover, near field scanning optical microscopy was employed to investigate the spatial variations of extended defects and their effects on the optical quality of semipolar and InGaN heterostructures, which are promoted for higher efficiency light emitters owing to reduced internal polarization fields. The near-field PL from the c+ wings in heterostructures was found to be relatively strong and uniform across the sample but the emission from the c- wings was substantially weaker due to the presence of high density of threading dislocations and basal plane stacking faults. In case of heterostructures, striated regions had weaker PL intensities compared to other regions and the meeting fronts of different facets were characterized by higher Indium content due to the varying internal field. Apart from being the part and parcel of blue LEDs, InGaN heterostructures can be utilized in generation of coherent lattice vibrations at terahertz frequencies. In analogy to LASERs based on photon cavities where light intensity is amplified, acoustic nanocavity devices can be realized for sustaining terahertz phonon oscillations which could potentially be used in acoustic imaging at the nanoscale and ultrafast acousto-optic modulation. Using In0.03Ga0.97N/InxGa1-xN MQWs with varying x, coherent phonon oscillations at frequencies of 0.69-0.80 THz were generated, where changing the MQW period (11.5 nm -10 nm) provided frequency tuning. The magnitude of phonon oscillations was found to increase with indium content in quantum wells, as demonstrated by time resolved differential transmission spectroscopy. Design of an acoustic nanocavity structure was proposed based on the abovementioned experimental findings and also supported by full cavity simulations. Optical gap engineering and carrier dynamics in colloidal Ge1−xSnx QDs were investigated in order to explore their potential in optoelectronics. By changing the Sn content from 5% to 23% in 2 nm-QDs, band-gap tunability from 1.88 eV to 1.61 eV, respectively, was demonstrated at 15 K, consistent with theoretical calculations. At 15 K, time resolved PL spectroscopy revealed slow decay (3 − 27 μs) of luminescence, due to recombination of spin-forbidden dark excitons and effect of surface states. Increase in temperature to 295 K led to three orders of magnitude faster decay (9 − 28 ns) owing to the effects of thermal activation of bright excitons and carrier detrapping from surface states. These findings on the effect of Sn incorporation on optical properties and carrier relaxation and recombination processes are important for future design of efficient Ge1−xSnx QDs based optoelectronic devices. This thesis work represents a comprehensive optical study of InGaN heterostructures and colloidal Ge1−xSnx QDs which would pave the way for more efficient InGaN based LEDs, realization of terahertz generating nanocavities, and efficient Ge1−xSnx based silicon compatible optoelectronic devices.
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Kulakci, Mustafa. "Silicon Nanocrystals Embedded In Sio2 For Light Emitting Diode (led) Applications." Master's thesis, METU, 2005. http://etd.lib.metu.edu.tr/upload/3/12606557/index.pdf.

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In this study, silicon nanocrystals (NC) were synthesized in silicon dioxide matrix by ion implantation followed by high temperature annealing. Annealing temperature and duration were varied to study their effect on the nanocrystal formation and optical properties. Implantation of silicon ions was performed with different energy and dose depending on the oxide thickness on the silicon substrate. Before device fabrication, photoluminescence (PL) measurement was performed for each sample. From PL measurement it was observed that, PL emission depends on nanocrystal size determined by the parameters of implantation and annealing process. The peak position of PL emission was found to shifts toward higher wavelength when the dose of implanted Si increased. Two PL emission bands were observed in most cases. PL emission around 800 nm originated from Si NC in oxide matrix. Other emissions can be attributed to the luminescent defects in oxide or oxide/NC interface. In order to see electroluminescence properties Light Emitting Devices (LED) were fabricated by using metal oxide semiconductor structure, current-voltage (I-V) and electroluminescence (EL) measurements were conducted. I-V results revealed that, current passing through device depends on both implanted Si dose and annealing parameters. Current increases with increasing dose as one might expect due to the increased amount of defects in the matrix. The current however decreases with increasing annealing temperature and duration, which imply that, NC in oxide behave like a well controlled trap level for charge transport. From EL measurements, few differences were observed between EL and PL results. These differences can be attributed to the different excitation and emission mechanisms in PL and EL process. Upon comparision, EL emission was found to be inefficient due to the asymmetric charge injection from substrate and top contact. Peak position of EL emission was blue shifted with respect to PL one, and approached towards PL peak position as applied voltage increased. From the results of the EL measurements, EL emission mechanisms was attributed to tunneling of electron hole pairs from top contact and substrate to NC via oxide barrier.
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Li, Zonglin, and 李宗林. "Reliability study of InGaN/GaN light-emitting diode." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B43224155.

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Li, Zonglin. "Reliability study of InGaN/GaN light-emitting diode." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B43224155.

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Li, Guangru. "Nanostructured materials for optoelectronic devices." Thesis, University of Cambridge, 2016. https://www.repository.cam.ac.uk/handle/1810/263671.

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This thesis is about new ways to experimentally realise materials with desired nano-structures for solution-processable optoelectronic devices such as solar cells and light-emitting diodes (LEDs), and examine structure-performance relationships in these devices. Short exciton diffusion length limits the efficiency of most exciton-based solar cells. By introducing nano-structured architectures to solar cells, excitons can be separated more effectively, leading to an enhancement of the cell’s power conversion efficiency. We use diblock copolymer lithography combined with solvent-vapour-assisted imprinting to fabricate nano-structures with 20-80 nm feature sizes. We demonstrate nanostructured solar cell incorporating the high-performance polymer PBDTTT-CT. Furthermore, we demonstrated the patterning of singlet fission materials, including a TIPS-pentacene solar cell based on ZnO nanopillars. Recently perovskites have emerged as a promising semiconductor for optoelectronic applications. We demonstrate a perovskite light-emitting diode that employs perovskite nanoparticles embedded in a dielectric polymer matrix as the emissive layer. The emissive layer is spin-coated from perovskite precursor/polymer blend solution. The resultant polymer-perovskite composites effectively block shunt pathways within the LED, thus leading to an external quantum efficiency of 1.2%, one order of magnitude higher than previous reports. We demonstrate formations of stably emissive perovskite nanoparticles in an alumina nanoparticle matrix. These nanoparticles have much higher photoluminescence quantum efficiency (25%) than bulk perovskite and the emission is found to be stable over several months. Finally, we demonstrate a new vapour-phase crosslinking method to construct full-colour perovskite nanocrystal LEDs. With detailed structural and compositional analysis we are able to pinpoint the aluminium-based crosslinker that resides between the nanocrystals, which enables remarkably high EQE of 5.7% in CsPbI3 LEDs.
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Cheng, Kam-ho, and 鄭錦豪. "A study on novel organic semiconductor devices: light-emitting diode and thin-film transistor." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B43085519.

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Cheng, Kam-ho. "A study on novel organic semiconductor devices light-emitting diode and thin-film transistor /." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B43085519.

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Hudson, Andrew Ian. "Output limitations to single stage and cascaded 2-2.5μm light emitting diodes". Thesis, University of Iowa, 2014. https://ir.uiowa.edu/etd/1468.

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Since the advent of precise semiconductor engineering techniques in the 1960s, considerable effort has been devoted both in academia and private industry to the fabrication and testing of complex structures. In addition to other techniques, molecular beam epitaxy (MBE) has made it possible to create devices with single mono-layer accuracy. This facilitates the design of precise band structures and the selection of specific spectroscopic properties for light source materials. The applications of such engineered structures have made solid state devices common commercial quantities. These applications include solid state lasers, light emitting diodes and light sensors. Band gap engineering has been used to design emitters for many wavelength bands, including the short wavelength (SWIR) infrared region which ranges from 1.5 to 2.5 μm [1]. Practical devices include sensors operating in the 2-2.5 μm range. When designing such a device, necessary concerns include the required bias voltage, operating current, input impedance and especially for emitters, the wall-plug efficiency. Three types of engineered structures are considered in this thesis. These include GaInAsSb quaternary alloy bulk active regions, GaInAsSb multiple quantum well devices (MQW) and GaInAsSb cascaded light emitting diodes. The three structures are evaluated according to specific standards applied to emitters of infrared light. The spectral profiles are obtained with photo or electro-luminescence, for the purpose of locating the peak emission wavelength. The peak wavelength for these specimens is in the 2.2-2.5μm window. The emission efficiency is determined by employing three empirical techniques: current/voltage (IV), radiance/current (LI), and carrier lifetime measurements. The first verifies that the structure has the correct electrical properties, by measuring among other parameters the activation voltage. The second is used to determine the energy efficiency of the device, including the wall-plug and quantum efficiencies. The last provides estimates of the relative magnitude of the Shockley Read Hall, radiative and Auger coefficients. These constants illustrate the overall radiative efficiency of the material, by noting comparisons between radiative and non-radiative recombination rates.
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Liang, Yu-Han. "Deep Ultraviolet Light Emitters Based on (Al,Ga)N/GaN Semiconductor Heterostructures." Research Showcase @ CMU, 2017. http://repository.cmu.edu/dissertations/1008.

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Deep ultraviolet (UV) light sources are useful in a number of applications that include sterilization, medical diagnostics, as well as chemical and biological identification. However, state-of-the-art deep UV light-emitting diodes and lasers made from semiconductors still suffer from low external quantum efficiency and low output powers. These limitations make them costly and ineffective in a wide range of applications. Deep UV sources such as lasers that currently exist are prohibitively bulky, complicated, and expensive. This is typically because they are constituted of an assemblage of two to three other lasers in tandem to facilitate sequential harmonic generation that ultimately results in the desired deep UV wavelength. For semiconductor-based deep UV sources, the most challenging difficulty has been finding ways to optimally dope the (Al,Ga)N/GaN heterostructures essential for UV-C light sources. It has proven to be very difficult to achieve high free carrier concentrations and low resistivities in high-aluminum-containing III-nitrides. As a result, p-type doped aluminum-free III-nitrides are employed as the p-type contact layers in UV light-emitting diode structures. However, because of impedance-mismatch issues, light extraction from the device and consequently the overall external quantum efficiency is drastically reduced. This problem is compounded with high losses and low gain when one tries to make UV nitride lasers. In this thesis, we provide a robust and reproducible approach to resolving most of these challenges. By using a liquid-metal-enabled growth mode in a plasma-assisted molecular beam epitaxy process, we show that highly-doped aluminum containing III-nitride films can be achieved. This growth mode is driven by kinetics. Using this approach, we have been able to achieve extremely high p-type and n-type doping in (Al,Ga)N films with high aluminum content. By incorporating a very high density of Mg atoms in (Al,Ga)N films, we have been able to show, by temperature-dependent photoluminescence, that the activation energy of the acceptors is substantially lower, thus allowing a higher hole concentration than usual to be available for conduction. It is believed that the lower activation energy is a result of an impurity band tail induced by the high Mg concentration. The successful p-type doping of high aluminum-content (Al,Ga)N has allowed us to demonstrate operation of deep ultraviolet LEDs emitting at 274 nm. This achievement paves the way for making lasers that emit in the UV-C region of the spectrum. In this thesis, we performed preliminary work on using our structures to make UV-C lasers based on photonic crystal nanocavity structures. The nanocavity laser structures show that the threshold optical pumping power necessary to reach lasing is much lower than in conventional edge-emitting lasers. Furthermore, the photonic crystal nanocavity structure has a small mode volume and does not need mirrors for optical feedback. These advantages significantly reduce material loss and eliminate mirror loss. This structure therefore potentially opens the door to achieving efficient and compact lasers in the UV-C region of the spectrum.
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Книги з теми "Light Emitting Diode - Semiconductor Nanocrystals"

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P, Chen N., ed. Handbook of light emitting and Schottky diode research. Hauppauge, NY: Nova Science Publishers, 2009.

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2

Held, Gilbert. Introduction to light emitting diode technology and applications. Boca Raton: Auerbach, 2009.

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3

Nakamura, Shuji. The blue laser diode: GaN based light emitters and lasers. Berlin: Springer, 1997.

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4

J, Linden Kurt, Society of Photo-optical Instrumentation Engineers., and United States. Advanced Research Projects Agency., eds. Laser diode and LED applications III: 10-11 February, 1997, San Jose, California. Bellingham, Washington: SPIE, 1997.

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5

Pearton, Stephen J., Gerhard Fasol, and Shuji Nakamura. The Blue Laser Diode: The Complete Story. 2nd ed. Springer, 2000.

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6

Jian, Wang, Changhee Lee, and He-Zhou Wang. Light-Emitting Diode Materials and Devices II: 12-14 November 2007, Beijing, China. SPIE, 2007.

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7

Gang, Yu, Chen Chuangtian 1937-, Lee Changhee 1964-, Society of Photo-optical Instrumentation Engineers., Zhongguo guang xue xue hui., Australian Optical Society, and Guo jia zi ran ke xue ji jin wei yuan hui (China), eds. Light-emitting diode materials and devices: 8-10 November 2004, Beijing, China. Bellingham, Wash: SPIE, 2005.

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Частини книг з теми "Light Emitting Diode - Semiconductor Nanocrystals"

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Verma, Shruti, and Shaibal Mukherjee. "Investigation on Hybrid Green Light-Emitting Diode." In Physics of Semiconductor Devices, 281–83. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_71.

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2

Masui, Hisashi. "Semiconductor Crystals and Device Physics." In Introduction to the Light-Emitting Diode, 85–115. Cham: Springer Nature Switzerland, 2023. http://dx.doi.org/10.1007/978-3-031-30716-4_4.

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Fan, Bingfeng, Yi Zhuo, and Gang Wang. "White Light-Emitting Diode: Fundamentals, Current Status, and Future Trends." In Handbook of GaN Semiconductor Materials and Devices, 463–87. Boca Raton : Taylor & Francis, CRC Press, 2017. | Series: Series in optics and optoelectronics: CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-14.

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Kumar, Sudhir, Jwo-Huei Jou, Chun-Yu Hsieh, Yung-Cheng Jou, and Jing-Ru Tseng. "An Energy Efficient and High Color Rendering Index Candle Light-Style Organic Light Emitting Diode for Illumination." In Physics of Semiconductor Devices, 919–21. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_237.

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5

Singh, Jyoti, Niteen P. Borane, and Rajamouli Boddula. "Milestone Developments and New Perspectives of Nano/Nanocrystal Light Emitting Diodes." In Light-Emitting Diodes - New Perspectives [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.108907.

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Анотація:
Light emitting diode (LED) is a one type of p/n junction semiconductor device which is used in less energy consumption for numerous lighting functions. Because of their high performance and long existence, their eye-catching application is getting increasing numbers in recent times. LEDs are nowadays defined as using the “ultimate light bulb”. In a previous couple of years, its efficiency has been multiplied through converting it to nano size. This new light-emitting has a nano-pixel structure and it affords high-resolution performance and the geometry of the pixel is cylindrical or conical form. Due to the fact that the previous few years, a few impurity-doped nanocrystal LEDs are varying a good deal in trend. Its performance is very excessive and consumes a smaller amount of voltage. Its monochromatic behavior and indicator excellent are shown publicly demanded in the market and in this work, it’s covered evaluations of the fundamental’s standards of LEDs and the specific mixed metallic and nanocrystal shape of emitters. In addition, it covers the upcoming challenges that the current trend is working to resolve to get efficient materials to fulfill the future energy crisis.
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"Light-Emitting Diode." In Complete Guide to Semiconductor Devices, 396–407. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2010. http://dx.doi.org/10.1002/9781118014769.ch52.

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Hoi Wai Choi. "Light-emitting diode technologies." In Semiconductor Lasers and Diode-based Light Sources for Biophotonics, 117–41. Institution of Engineering and Technology, 2018. http://dx.doi.org/10.1049/pbhe007e_ch4.

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Jiang, Wenbin, and Michael S. Lebby. "Semiconductor Laser and Light-Emitting Diode Fabrication." In Handbook of Fiber Optic Data Communication, 603–54. Elsevier, 2002. http://dx.doi.org/10.1016/b978-012207891-0/50017-x.

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Gioannini, Mariangela, Paolo Bardella, and Ivo Montrosset. "Fundamentals on modeling of edge-emitting semiconductor lasers and superluminescent light-emitting diodes." In Semiconductor Lasers and Diode-based Light Sources for Biophotonics, 15–55. Institution of Engineering and Technology, 2018. http://dx.doi.org/10.1049/pbhe007e_ch2.

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Yu-Pin Lan, Ying-Yu Lai, Yung-Chi Wu, Tien-Chang Lu, Hao-Chung Kuo, and Shing-Chung Wang. "GaN-based blue vertical-cavity surface-emitting lasers." In Semiconductor Lasers and Diode-based Light Sources for Biophotonics, 143–72. Institution of Engineering and Technology, 2018. http://dx.doi.org/10.1049/pbhe007e_ch5.

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Тези доповідей конференцій з теми "Light Emitting Diode - Semiconductor Nanocrystals"

1

Congreve, Daniel, Mahesh Gangishetty, Shaocong Hou, and Qimin Quan. "Efficient blue perovskite nanocrystal light emitting diodes (Conference Presentation)." In Physical Chemistry of Semiconductor Materials and Interfaces XVII, edited by Hugo A. Bronstein and Felix Deschler. SPIE, 2018. http://dx.doi.org/10.1117/12.2320324.

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2

Huh, Chul, Kyung-Hyun Kim, Hyunsung Ko, Bong Kyu Kim, Wanjoong Kim, Jongcheol Hong, Gun Yong Sung, Jisoon Ihm, and Hyeonsik Cheong. "Effects of electron injection efficiency on performances of Si nanocrystal light-emitting diodes." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666484.

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3

Guo, Xiaoyun, John W. Graff, E. F. Schubert, and Robert F. Karlicek, Jr. "Photon recycling semiconductor light-emitting diode." In Symposium on Integrated Optoelectronics, edited by H. Walter Yao, Ian T. Ferguson, and E. F. Schubert. SPIE, 2000. http://dx.doi.org/10.1117/12.382814.

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4

Liu, Deming, Lirong Huang, and Mingju Nie. "A novel semiconductor white light emitting diode." In Integrated Optoelectronic Devices 2005, edited by Marek Osinski, Fritz Henneberger, and Hiroshi Amano. SPIE, 2005. http://dx.doi.org/10.1117/12.591291.

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Alahmadi, N. A., I. Harrison, and K. H. Badr. "The electrical characteristic of commercial GaN blue light emitting diode." In 2007 International Semiconductor Device Research Symposium. IEEE, 2007. http://dx.doi.org/10.1109/isdrs.2007.4422408.

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Zhong, Haizheng, Bingkun Chen, Zelong Bai, and Bingsuo Zou. "Colloidal I-III-VI Semiconductor Nanocrystals for Light-emitting and Display Applications." In Advanced Optoelectronics for Energy and Environment. Washington, D.C.: OSA, 2013. http://dx.doi.org/10.1364/aoee.2013.asu1b.4.

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Yamao, Takeshi, Koki Nishimura, Yuhi Inada, and Shu Hotta. "Organic Light-Emitting Diode Composed of an Oligomer Crystal Emission Layer." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819115.

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8

Prakash, Asit, and Monica Katiyar. "White polymer light emitting diode using blend of fluorescent polymers." In 16th International Workshop on Physics of Semiconductor Devices, edited by Monica Katiyar, B. Mazhari, and Y. N. Mohapatra. SPIE, 2012. http://dx.doi.org/10.1117/12.928008.

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Juhari, Nurjuliana, Wan Haliza Abd Majid, and Zainol Abidin Ibrahim. "Degradation of Single Layer MEH-PPV Organic Light Emitting Diode (OLED)." In 2006 IEEE International Conference on Semiconductor Electronics. IEEE, 2006. http://dx.doi.org/10.1109/smelec.2006.381030.

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Schowalter, L. J., J. R. Grandusky, Jianfeng Chen, M. C. Mendrick, and S. R. Gibb. "Single-chip 260 nm pseudomorphic ultraviolet light emitting diode emitting over 200 mW output power." In 2011 International Semiconductor Device Research Symposium (ISDRS 2011). IEEE, 2011. http://dx.doi.org/10.1109/isdrs.2011.6135382.

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