Дисертації з теми "Life time of charge carrier"

This thesis treats about semiconducting silicon structures. It describes the characteristics of the element and creation of P and N type of semiconductor and discusses about different types of faults in the crystal lattice. It deals with the description of methods for monitoring faults in semiconductor ie. determining the properties of semiconductors via EBIC, EBIV and CC methods, which are used for analysis of semiconductor devices and materials. Determining the properties of silicon components is being done by generation of charge carriers in the sample loaded in chamber of the scanning electron microscope by high energy electrons. Bellow the sample surface is being generated an electric charge which is being collected by probes. Using this data obtained by EBIC and CC were evaluated diffusion length and lifetime of electrons.

Загальний обсяг роботи складає 72 сторінки, кількість ілюстрацій - 32, таблиць - 2, джерел за переліком посилань - 18. Час життя носіїв неврівноважених носіїв заряду є важливим параметром для напівпровідникових приладів та пристроїв. Зазвичай вважається, що присутність металів в кремнії призводить до погіршення об’ємних властивостей напівпровідника. В останні три десятиліття почав набувати популярності такий матеріал як пористий кремній, одним із способів отримання якого є хімічне травлення в присутності металів. Метою роботи є дослідження часу життя неврівноважених носіїв заряду в пористому кремнії, виготовленому методом хімічного травлення в присутності металів. Важливим факторов є присутність різних металів при травленні крепнію. Для здійснення дослідження необхідно про зробии наступне: • Провести огляд літератури та ознайомитися с особливостями пористого кремнію та методами його виготовлення. • Виготовити достатню кількість різноманітних зразків пористого кремнію • Провести виміри часу життя • Зробити висновки щодо отриманох під час дослідження інформації Об’єктами дослідження є зразки пористого кремнію, що містять ту чи іншу кількість металічних речовин. У роботі було виористано наступні методи дослідження: • Отримання реалксаційної характеристики носіїв заряду методом модцляції в точковому контакті. • Вимірювання опору зразків • Вивчення морфології зразків сенсорів за допомогою растрової електронної мікроскопії. Наукова новизна полягає у дослідженні параметрів пористого кремнію, протравленного саме в присутності Ag, Au та Cu з подальшим видаленням металічних наночасток у деяких випадках.
The total amount of work is 72 pages, number of illustrations - 32, tables - 2, bibliographic titles - 18. The lifetime of carriers of unbalanced charge carriers is an important parameter for semiconductor devices and devices. It is generally believed that the presence of metals in silicon leads to a deterioration of the bulk properties of the semiconductor. In the last three decades, such material has become popular as porous silicon, one of the methods of obtaining which is chemical etching in the presence of metals. The purpose of this work is to study the lifetime of unbalanced charge carriers in porous silicon made by the method of chemical etching in the presence of metals. Important factors are the presence of various metals during etching. To conduct the study, you must do the following: • To conduct a review of the literature and get acquainted with the features of porous silicon and methods of its manufacture. • To produce a sufficient number of different samples of porous silicon • Take measurements of life time • Make conclusions about the information obtained during the study The objects of the study are samples of porous silicon containing one or another amount of metallic substances. The following research methods were developed in the work: • Obtaining a realxication characteristic of charge carriers by a method of modulation in point contact. Measuring the resistance of the samples • Studying the morphology of sensor samples using raster electron microscopy. The scientific novelty consists in studying the parameters of porous silicon, etched precisely with help of metal chemical assisting etching with Ag, Au, and Cu, with the subsequent removal of metallic nanoparticles in some cases.

One-dimensional (1D) nanomaterials are of great importance for a number of potential applications. However, in order to realize this potential a thorough understanding of the charge-carrier dynamics in these materials is required, since these largely determine the optoelectronic properties of the materials in question. This thesis investigates the charge-carrier dynamics of two 1D nanomaterials, single-walled carbon nanotubes (CNTs) and tungsten-oxide nanowires (WOxNWs), with the goal of better understanding the nature of their optoelectronic responses, and how nanomaterial geometry and morphology influence these responses. We do this using terahertz time-domain spectroscopy (THz-TDS) and optical pump - terahertz probe time-domain spectroscopy (OPTP). Firstly, we discuss how to properly analyse and interpret the data obtained from these experiments when measuring 1D nanomaterials. While the data obtained from THz-TDS is fairly straight-forward to analyse, OPTP experimental data can be far from trivial. Depending on the relative size of the sample geometry compared to the probe wavelength, various approximations can be used to simplify the extraction of their ultrafast response. We present a general method, based on the transfer matrix method, for evaluating the applicability of these approximations for a given multilayer structure, and show the limitations of the most commonly used approximations. We find that these approximations are only valid in extreme cases where the thickness of the sample is several orders of magnitude smaller or larger than the wavelength, which highlight the danger originating from improper use of these approximations. We then move on to investigate how the charge-carrier dynamics of our CNTs is influenced by nanotube length and density. This is done through studying the nature of the broad THz resonance observed in finite-length CNTs, and how the nanotube length and density affects this resonance. We do this by measuring the conductivity spectra of thin films comprising bundled CNTs of different average lengths in the frequency range 0.3-1000 THz and temperature interval 10-530 K. From this we show that the observed temperature-induced changes in the terahertz conductivity spectra depend strongly on the average CNT length, with a conductivity around 1 THz that increases/decreases as the temperature increases for short/long tubes. This behaviour originates from the temperature dependence of the electron scattering rate, which results in a subsequent broadening of the observed THz conductivity peak at higher temperatures and a shift to lower frequencies for increasing CNT length. Finally, we show that the change in conductivity with temperature depends not only on tube length, but also varies with tube density. We record the effective conductivities of composite films comprising mixtures of WS2 nanotubes and CNTs vs CNT density for frequencies in the range 0.3-1 THz, finding that the conductivity increases/decreases for low/high density films as the temperature increases. This effect arises due to the density dependence of the effective length of conducting pathways in the composite films, which again leads to a shift and temperature dependent broadening of the THz conductivity peak. Next, we investigate the conflicting reports regarding the ultrafast photoconductive response of films of CNTs, which apparently exhibit photoconductivities that can vastly differ, even in sign. Here we observe explicitly that the THz photoconductivity of CNT films is a highly variable quantity which correlates with the length of the CNTs, while the specific type of CNT has little influence. Moreover, by comparing the photo-induced change in THz conductivity with heat-induced changes, we show that both occur primarily due to heat-generated modification of the Drude electron relaxation rate, resulting in a broadening of the plasmonic resonance present in finite-length metallic and doped semiconducting CNTs. This clarifies the nature of the photo-response of CNT films and demonstrates the need to carefully consider the geometry of the CNTs, specifically the length, when considering them for application in optoelectronic devices. We then move on to consider our WOxNWs. We measure the terahertz conductivity and photoconductivity spectra of thin films compromising tungsten-oxide (WOx) nanowires of average diameters 4 nm and 100 nm, and oxygen deficiencies WO2.72 and WO3 using THz-TDS and OPTP. From this we present the first experimental evidence of a metal-to-insulator transition in WOx nanowires, which occurs when the oxygen content is increased from x=2.72 -> 3 and manifests itself as a massive drop in the THz conductivity due to a shift in the Fermi level from the conduction band down into the bandgap. Furthermore we present the first experimental measurements of the photoexcited charge-carrier dynamics of WOx nanowires on a picosecond timescale and map the influence of oxygen-content and nanowire diameter. From this we show that the decay-dynamics of the nanowires is characterized by a fast decay of < 1 ps, followed by slow decay of 3-10 ps, which we attribute to saturable carrier trapping at the surface of the nanowires.

All-optical time-resolved measurement techniques provide a powerful tool for investigating critical parameters that determine the performance of infrared photodetector and emitter semiconductor materials. Narrow-bandgap InAs/GaSb type-II superlattices (T2SLs) have shown great promise as next generation materials, due to superior intrinsic properties and versatility. Unfortunately, InAs/GaSb T2SLs are plagued by parasitic Shockley-Read-Hall recombination centers that shorten the carrier lifetime and limit device performance. Ultrafast pump-probe techniques and time-resolved differential-transmission measurements are used here to demonstrate that "Ga-free" InAs/InAs₁₋xSbx T2SLs and InAsSb alloys do not have this same limitation and thus have significantly longer carrier lifetimes. Measurements of unintentionally doped MWIR and LWIR InAs/InAs₁₋xSbx T2SLs demonstrate minority carrier (MC) lifetimes of 18.4 µs and 4.5 µs at 77 K, respectively. This represents a more than two order of magnitude increase compared to the 90 ns MC lifetime measured in a comparable MWIR and LWIR InAs/GaSb T2SL. Through temperature-dependent differential-transmission measurements, the various carrier recombination processes are differentiated and the dominant recombination mechanisms identified for InAs/InAs₁₋xSbx T2SLs. These results demonstrate that these Ga-free materials are viable options over InAs/GaSb T2SLs and potentially bulk Hg₁₋xCdxTe photodetectors. In addition to carrier lifetimes, the drift and diusion of excited charge carriers through the superlattice layers (i.e. in-plane transport) directly aects the performance of photo-detectors and emitters. All-optical ultrafast techniques were successfully used for a direct measure of in-plane diffusion coeffcients in MWIR InAs/InAsSb T2SLs using a photo-generated transient grating technique at various temperatures. Ambipolar diffusion coefficients of approximately 60 cm²/s were reported for MWIR InAs/InAs₁₋xSbxT2SLs at 293 K.

All-optical time-resolved measurement techniques provide a powerful tool for investigating critical parameters that determine the performance of infrared photodetector and emitter semiconductor materials. Narrow-bandgap InAs/GaSb type-II superlattices (T2SLs) have shown great promise as a next generation source of these materials, due to superior intrinsic properties and versatility. Unfortunately, InAs/GaSb T2SLs are plagued by parasitic Shockley-Read-Hall recombination centers that shorten the carrier lifetime and limit device performance. Ultrafast pump-probe techniques and time-resolved differential transmission measurements are used here to demonstrate that Ga-free InAs/InAsSb T2SLs and InAsSb alloys do not have this same limitation and thus have significantly longer carrier lifetimes. Measurements at 77 K provided minority carrier lifetimes of 9 μs and 3 μs for an unintentionally doped mid-wave infrared (MWIR) InAs/InAsSb T2SL and InAsSb alloy, respectively; a two order of magnitude increase compared to the 90 ns minority carrier lifetime measured in a comparable MWIR InAs/GaSb T2SL. Through temperature-dependent lifetime measurements, the various carrier recombination processes are differentiated and the dominant mechanisms identified for each material. These results demonstrate that these Ga-free materials are viable options over InAs/GaSb T2SLs for potentially improved infrared photodetectors. In addition to carrier lifetimes, the drift and diffusion of excited charge carriers through the superlattice growth layers (i.e. vertical transport) directly affects the performance of photodetectors and emitters. Unfortunately, there is a lack of information pertaining to vertical transport, primarily due to difficulties in making measurements on thin growth layers and the need for non-standard measurement techniques. However, all-optical ultrafast techniques are successfully used here to directly measure vertical diffusion in MWIR InAs/GaSb T2SLs. By optically generating excess carriers near one end of a MWIR T2SL and measuring the transit time to a thin, 2 lower-bandgap superlattice placed at the other end, the time-of-flight of vertically diffusing carriers is determined. Through investigation of both unintentionally doped and p-type superlattices at 77 K, the vertical hole and electron diffusion coefficients are determined to be 0.04±0.03 cm2/s and 4.7±0.5 cm2/s, corresponding to vertical mobilities of 6±5 cm2/Vs and 700±80 cm2/Vs, respectively. These measurements are, to my knowledge, the first direct measurements of vertical transport properties in narrow-bandgap superlattices. Lastly, the widely tunable two-color ultrafast laser system used in this research allowed for the investigation of nonlinear optical properties in narrow-bandgap semiconductors. Time-resolved measurements taken at 77 K of the nondegenerate two-photon absorption spectrum of bulk n-type GaSb have provided new information about the nonresonant change in absorption and two-photon absorption coefficients in this material. Furthermore, as the nondegenerate spectrum was measured over a wide range of optical frequencies, a Kramers-Kronig transformation allowed the dispersion of the nondegenerate nonlinear refractive index to be calculated.

La photocatalyse se base sur l’excitation d’un semi-conducteur par des photons d’énergie supérieure ou égale à son gap, générant des paires électron-trous. Celles-ci sont très réactives et susceptibles de réagir à l’interface pour réaliser par exemple l’oxydation totale d’un composé organique. Cette méthode peut être appliquée sur des eaux usées pour éliminer totalement les polluants organiques qui y sont présents. Dans la perspective d’une utilisation du soleil comme source de lumière, cette méthode peut s’avérer très économique et écologique pour le traitement de l’eau.L’interaction lumière-semi-conducteur et la dynamique des porteurs de charge sont des processus physico-chimiques primordiaux pour la photocatalyse, et il est nécessaire de bien les comprendre pour maîtriser le procédé et développer des matériaux plus efficaces. La Time Resolved Microwave Conductivity (TRMC) est une technique qui se base sur la réflexion des micro-ondes sur un semi-conducteur excité qui est directement reliée avec le nombre de porteurs de charge photo-générés. Il s’agit d’un moyen de sonder en temps réel la dynamique des porteurs de charge dans les semi-conducteurs.Ce travail s’inscrit dans le cadre du projet ANR PhotoNorm. Il consiste en une étude par TRMC de dioxyde de titane TiO2 utilisé pour la dépollution de l’eau par photocatalyse. Une partie de cette étude concerne la caractérisation des propriétés opto-électroniques des matériaux, pour lesquels la dynamique des porteurs de charge sera comparée à l’activité photocatalytique. L’effet bénéfique en photocatalyse de la déposition de nanoparticules d'or, d'argent ou bimetallique or-cuivre sur des TiO2 commerciaux sera relié à une capture d’électrons libres observée en TRMC. L’effet bénéfique sur la photocatalyse en lumière visible a été relié à une injection d’électrons dans le TiO2 par des nanoparticules de bismuth. L’autre partie de ce travail consiste en une étude plus fondamentale de la dynamique des porteurs de charge dans des TiO2 commerciaux ou synthétisés dans le cadre du projet PhotoNorm. Il y sera montré l’importance de la longueur d’onde et de l’intensité d’excitation du matériau sur le rendement de génération de porteurs de charge. L’importance des effets de surface et de l’environnement seront aussi mis en évidence de plusieurs façons. La première consiste simplement en un traitement chimique de la surface (lavage), qui peut avoir une grande influence à la fois sur la dynamique des porteurs de charge et sur la photocatalyse, sûrement en lien avec la présence d’impuretés de surface. La seconde consiste à imprégner le TiO2 par des colorants organiques présentant une forte absorption en lumière visible. Les mesures de TRMC sur ces systèmes permettent de mettre en évidence l’interaction entre le semi-conducteur et les molécules extérieures adsorbées à sa surface, notamment l’injection d’électrons du colorant excité vers le semi-conducteur, mais aussi des effets de recombinaison accrus. La troisième méthode consiste à modifier l’atmosphère de travail en TRMC. Il y est observé notamment l’importance de l’oxygène sur la dynamique des porteurs de charge, et notamment les effets de captures d’électrons, phénomènes qui entrent en jeu dans le processus de photocatalyse.Au final, la TRMC s’avère être un bon moyen d’étude de la durée de vie des porteurs de charge dans les semi-conducteurs, qui peut permettre de mieux comprendre les processus fondamentaux associés à la photocatalyse
The photocatalysis is based on the excitation of semiconductor by photons with an energy superior or equal to the gap, generating electron-hole pairs. These are very reactive and able to react at the interface, involving for exemple the total oxidation of an organic compound. This method can be used on wastewater to eliminate the organic pollutants. With a view to use the sun as a light source this method may become an economical and ecological way for the water treatment. Light interaction between light and semiconductor and the charge-carrier dynamics are fundamental processes for photocatalysis and it is necessary to understand them in order to manage with this process and develop more efficient materials. The Time Resolved Microwave Conductivity (TRMC) is a method based on the reflexion of microwaves on an excited semiconductor which is linked to the number of photo-generated charge-carriers. This method allows us to probe in real time the charge-carrier dynamics in semiconductor. This work is included in the ANR Photonorm project. It consists in a TRMC study on titanium dioxyde TiO2 used for water depollution by photocatalysis. One part of this study consists in the characterization of the opto-electronic properties of materials for which the charge-carrier dynamics will be compared with the photocatalytic activity. The beneficial effect of nanoparticles deposition of gold, silver or gold-copper bimetallics on commercial TiO2 will be linked to the observation of free electrons observed by TRMC . The beneficial effect on photocatalysis in visible light was linked to an electron injection in TiO2 by bismuth nanoparticles. The second part of this work consists in a more fundamental study of charge-carrier dynamics on commercial or synthetized for the Photonorm project. I will be shown the importance of excitation wavelength and intensities on charge carrier generation. The importance of surface effect and environment will be emphasized by several ways. The first one just consist in surface treatment which can have a major importance on charge-carrier dynamics and photocatalysis, probably in connection with the presence or not of impurities on the surface. The second way consists in impregnating TiO2 by organic dyes which show a strong visible light absorption. The TRMC measurements highlight the interaction between the adsorbed molecules and the semiconducteur, including the electron injection from the excited dye to the TiO2 but also an increased recombination effect. The third method consist in modified the working atmosphere in TRMC. The major role of oxygen is so observed on charge-carrier dynamics, with an effect of electron capture, involving in photocatalytic mechanism.Finally TRMC proves to be a convenient method for studying charge-carrier dynamics in semiconductors, which allow a better understanding of fundamental processes bound to photocatalysis

In this thesis ultrafast exciton dynamics of several colloidal quantum dots have been studied using visible transient absorption spectroscopy. The resultant transient decays and differential transmission spectra were analysed to determine the ultrafast relaxation channels, multiple exciton generation (MEG) efficiency and multi-exciton interactions in the observed materials. All QDs were preliminarily optically characterized using steady state absorption and photoluminescence spectroscopies. In addition, a high repetition infrared femtosecond pump probe experiment was designed and built to detect the picosecond intraband carrier relaxations in quantum dots. Picosecond carrier dynamics of type-II ZnTe/ZnSe and of CuInSe2 and CuInS2 type-I quantum dots were investigated. The common feature of these materials is that they are eco-friendly materials, being alternatives to the toxic Cd- and Pb- based materials. It was found that surface trapping occurred in both cases for electrons in the hot states, and in the minimum of the conduction band for ZnTe/ZnSe core/shell materials. Trion formation was observed in ZnTe/ZnSe core/shell dots at high power and unstirred conditions. The hot and cold electron trapping processes in type-II dots and CuInS2 and CuInSe2 dots shifted, distorted and moderately cancelled the bleach features. In addition, intra-gap hole trapping was observed in CuInS2 and CuInSe2 dots which results in a long decay feature in the recorded transients. MEG competes with Auger cooling, surface mediated relaxation and phonon emission. To enhance the MEG quantum yield, the rival mechanisms were suppressed in well-engineered CdSe/CdTe/CdS and CdTe/CdSe/CdS core/shell/shell and CdTe/CdS core/shell type-II quantum dots. The MEG slope efficiency and threshold for a range of different core size and shell thickness were found to be (142±9)%/Eg and (2.59±0.16)Eg, respectively. The observed threshold was consistent with the literature, whereas, the obtained slope efficiency was about three times higher than the previously reported values. The biexciton interaction energy of the dots stated in the previous paragraph was also studied. To date, time-resolved photoluminescence (TRPL) has been employed to study exciton interactions in type-II quantum dots and large repulsive biexciton interaction energy values between 50-100 meV have been reported. However, unlike the TRPL method, the TA experiment ensures that only two excitons remain in the band edge of the dot. Using this method, large attractive biexciton interaction energies up to ~-60 meV was observed. These results have promising implications regarding enhancing the MEG quantum yield.

Diamond is a promising material for high-power, high-frequency and high- temperature electronics applications, where its outstanding physical properties can be fully exploited. It exhibits an extremely high bandgap, very high carrier mobilities, high breakdown field strength, and the highest thermal conductivity of any wide bandgap material. It is therefore an outstanding candidate for the fastest switching, the highest power density, and the most efficient electronic devices obtainable, with applications in the RF power, automotive and aerospace industries. Lightweight diamond devices, capable of high temperature operation in harsh environments, could also be used in radiation detectors and particle physics applications where no other semiconductor devices would survive. The high defect and impurity concentration in natural diamond or high-pressure-high-temperature (HPHT) diamond substrates has made it difficult to obtain reliable results when studying the electronic properties of diamond. However, progress in the growth of high purity Single Crystal Chemical Vapor Deposited (SC-CVD) diamond has opened the perspective of applications under such extreme conditions based on this type of synthetic diamond. Despite the improvements, there are still many open questions. This work will focus on the electrical characterization of SC-CVD diamond by different measurement techniques such as internal photo-emission, I-V, C-V, Hall measurements and in particular, Time-of-Flight (ToF) carrier drift velocity measurements. With these mentioned techniques, some important properties of diamond such as drift mobilities, lateral carrier transit velocities, compensation ratio and Schottky barrier heights have been investigated. Low compensation ratios (ND/NA) < 10-4 have been achieved in boron-doped diamond and a drift mobility of about 860 cm2/Vs for the hole transit near the surface in a lateral ToF configuration could be measured. The carrier drift velocity was studied for electrons and holes at the temperature interval of 80-460 K. The study is performed in the low-injection regime and includes low-field drift mobilities. The hole mobility was further investigated at low temperatures (10-80 K) and as expected a very high mobility was observed. In the case of electrons, a negative differential mobility was seen in the temperature interval of 100-150K. An explanation for this phenomenon is given by the intervally scattering and the relation between hot and cold conduction band valleys. This was observed in direct bandgap semiconductors with non-equivalent valleys such as GaAs but has not been seen in diamond before. Furthermore, first steps have been taken to utilize diamond for infrared (IR) radiation detection. To understand the fundamentals of the thermal response of diamond, Temperature Coefficient of Resistance (TCR) measurements were performed on diamond Schottky diodes which are a candidate for high temperature sensors. As a result, very high TCR values in combination with a low noise constant (K1/f) was observed.

Diamond is a semiconductor with many superior material properties such as high breakdown field, high saturation velocity, high carrier mobilities and the highest thermal conductivity of all materials. These extreme properties, as compared to other (wide bandgap) semiconductors, make it desirable to develop single-crystalline epitaxial diamond films for electronic device and detector applications. Future diamond devices, such as power diodes, photoconductive switches and high-frequency field effect transistors, could in principle deliver outstanding performance due to diamond's excellent intrinsic properties. However, such electronic applications put severe demands on the crystalline quality of the material. Many fundamental electronic properties of diamond are still poorly understood, which severely holds back diamond-based electronic device and detector development. This problem is largely due to incomplete knowledge of the defects in the material and due to a lack of understanding of how these defects influence transport properties. Since diamond lacks a shallow dopant that is fully thermally activated at room temperature, the conventional silicon semiconductor technology cannot be transferred to diamond devices; instead, new concepts have to be developed. Some of the more promising device concepts contain thin delta-doped layers with a very high dopant concentration, which are fully activated in conjunction with undoped (intrinsic) layers where charges are transported. Thus, it is crucial to better understand transport in high-quality undoped layers with high carrier mobilities. The focus of this doctoral thesis is therefore the study of charge transport and related electronic properties of single-crystalline plasma-deposited (SC-CVD) diamond samples, in order to improve knowledge on charge creation and transport mechanisms. Fundamental characteristics such as drift mobilities, compensation ratios and average pair-creation energy were measured. Comparing them with theoretical predictions from simulations allows for verification of these models and improvement of the diamond deposition process.

This study seeks to evaluate the temperature effects on the electronic properties of thermoelectric materials, using first principles Density Functional Theory (DFT) calculations by incorporating the temperature effects on structural properties of the material. Using the electronic properties attained, the charge carrier scattering relaxation times were determined. The effect of interface between PbTe and SrTe on the charge carrier mobility was studied by finding out the relative alignment of energy bands at the semiconductor heterojunction. The crystal shape of the SrTe precipitates in the PbTe host matrix was evaluated from the interface energies using the Wulffman construction. We also attempted to develop a relation between the interface energies and electronic band alignment for different interface orientations. In this research, we incorporated the temperature effects on the structural properties of PbTe to get the temperature dependence of electronic properties like energy bandgap and effective masses of charge carriers. We used the values of bandgap and effective masses to determine the charge carrier scattering relaxation time at different temperatures which is used in evaluating the transport properties of thermoelectric materials like the Seebeck coefficient and electrical conductivity.
Master of Science

Les matériaux semiconducteurs de pérovskite halogénée se sont révélés très prometteurs en raison de leurs propriétés exceptionnelles et de leur capacité d’élaboration à faible coût. Malgré les progrès réalisés, une meilleure compréhension des dynamiques de relaxation et de recombinaison dans ces matériaux photo-actifs est nécessaire afin d’améliorer les performances des dispositifs opto-électroniques. Cette thèse porte sur la relaxation des porteurs de charge/excitons « chauds » après excitation au-dessus de la bande interdite, et la recombinaison Auger advenant après une excitation de forte puissance ou à haute énergie. La spectroscopie de fluorescence résolue en temps et d'absorption transitoire (AT) femtoseconde sont utilisées afin d’étudier les effets du confinement et de la composition sur ces processus, en particulier dans les nanoplaquettes (NPLs) colloïdales de pérovskite bidimensionnelles (2D), dont la synthèse a été développée et optimisée au préalable. Les dynamiques de relaxation ont été étudiées par AT en utilisant une méthode d'analyse globale où l'évolution temporelle des différentes compositions spectrales est modélisée suivant une cinétique de réactions séquentielles. Cette méthode a pu être appliquée afin de décrire efficacement la relaxation progressive dans les nanostructures de FAPbI₃ (FA= formamidinium) faiblement confinées, et a permis de dissocier les processus de retardement de relaxation à haute puissance d’excitation dus aux effets de « hot phonon bottleneck » et de ré-excitation par recombinaison Auger (RA). Par ailleurs, l'analyse globale de l’évolution spectrale a été essentielle afin d’examiner les dynamiques de relaxation dans les NPLs 2D à fort confinement quantique et diélectrique, présentant des effets Stark importants et une transition de bord de bande excitonique discrète. Comme dans les systèmes faiblement confinés, le taux de relaxation dans les NPLs diminue avec la puissance d'excitation. Cependant, il est plus rapide dans les systèmes présentant un confinement plus important, mettant alors en évidence l'absence de ”phonon bottleneck” intrinsèque. La nature des cations internes (FA, MA=méthylammonium ou Cs) n’influe pas ce taux, ni son évolution en puissance. Toutefois, les mesures dans les films de pérovskite 2D présentant une épaisseur de puits quantique équivalente, suggèrent un rôle des ligands de surface dans la capacité à libérer l'excès d'énergie dans l'environnement. Ensuite, les recombinaisons multi-excitoniques dominées par la RA non radiative ont été étudiées dans les NPLs de pérovskite 2D fortement confinées. Dû à la géométrie asymétrique de ces nanostructures et de la délocalisation limitée de l'exciton, le temps de RA dépend fortement de la densité d'excitons via la distance inter-exciton moyenne : A faible puissance d’excitation, la RA est limitée par la diffusion de l'exciton dans le plan 2D et se produit sur plusieurs centaines de picosecondes (dépendant ainsi de la géométrie de l'échantillon). En revanche, une puissance d'excitation élevée produit des excitons dont les fonctions d’onde se recouvrent spatialement, entraînant des temps de RA inférieurs à 10 ps. Finalement, les dynamiques excitoniques dans les NPLs 2D ont été mesurées par AT après excitation dans l’ultraviolet afin d'observer le processus de multiplication d’excitons. Ce dernier implique la génération de plusieurs excitons “géminés”, et donc proches spatialement, suite à l'absorption d'un unique photon de haute énergie
Halide perovskites have emerged as very promising photoactive materials due to their outstanding optoelectronic properties combined with low-cost processability. In spite of their successful implementation in photovoltaic or light-emitting devices, a deep understanding of the dynamics of relaxation and recombination is still missing in order to enhance the device performances. This thesis focuses on the study of two major fundamental processes occurring in colloidal halide perovskite nanostructures: the hot charge carrier/exciton relaxation (“cooling”), after excitation above the optical bandgap, and the non-radiative Auger recombination, taking place after high-fluence or high-photon energy excitation. In particular, time-resolved photoluminescence and femtosecond transient absorption spectroscopy were used to investigate the confinement and composition effects in strongly confined two-dimensional (2D) lead iodide perovskite nanoplatelets (NPLs), that were synthesized following the development and optimizations of colloidal methods. For the investigation of the cooling dynamics, a global analysis method based on single value decomposition was used, where the temporal evolution of the spectral lineshapes was modeled with a sequential kinetic scheme. This method was succesfully applied to effectively describe the continuous energy relaxation in weakly-confined thick FAPbI₃ nanoplates (FA=formamidinium) and allowed disantangleting the hot phonon bottleneck from the Auger reheating effects at high excitation fluence. Furthermore, the global analysis was essential to investigate the cooling dynamics in strongly confined 2D NPLs presenting large Stark effects and discrete excitonic band-edge transition far away from the continuum of states (exciton binding energy in several hundreds of meV). As in the weakly confined samples, the cooling rate of the NPLs decreases with the excitation fluence. However, it is faster in more-strongly confined samples, evidencing the absence of an intrinsic phonon bottleneck. Furthermore, the cooling rate and its evolution with the exciton density were found independent of the nature of the internal cations (FA, MA=methylammonium and Cs=cesium). However, when comparing with the rate measured in 2D layered perovskite thin film with equivalent quantum well thickness, the results strongly suggest a role of the surface ligands in the possibility to release the excess energy to the surrounding environment. This ligand-mediated relaxation mechanism becomes dominent in the thinner NPL samples with enhanced exciton/ligand vibrational mode coupling. Then, the multiple exciton recombination dominated by non-radiative Auger recombination (AR) was studied in the strongly-confined 2D perovskite NPLs. Due to the large asymmetric geometry and the limited exciton wavefunction delocalization, the AR rate strongly depends on the exciton density via the initial average inter-exciton distance. At low fluence, this distance is in several tens of nanometers such as the AR is limited by the exciton diffusion in the 2D plane. It thus occurs on a timescale of several hundreds of picoseconds and depends on the sample dimensionality (thickness and lateral sizes). In contrast, high excitation fluences produce “overlapping” excitons with inter-exciton distances of only a few times the exciton Bohr radius, resulting in AR times of less than 10 ps and independent of the NPL composition nor geometry. Finally, the exciton population dynamics of 2D NPLs after excitation in the ultraviolet was measured. The strong dependence of the AR with the inter-exciton distance allows the identification of multiple exciton generation (MEG), which involves the reaction of “geminate biexcitons” produced by the absorption of a single high-energy photon

The present thesis concerns aspects of the interaction ofmatter in gas, liquid and solid phases, with electromagneticradiation, ranging from the optical to the X-ray region. Overthe last decade the availability of ultrashort strong laserpulses as well as of high power synchrotron sources of tunableX-ray radiation has stimulated a rapid development of newexperimental techniques which makes it possible to analysedifferent physical, chemical and biological processes inunprecedented detail. All of this urges a concomitantdevelopment of adequate theoretical language and methodscombined with simulation techniques.

The first part of the thesis addresses nonlinear propagationof strong optical pulses. This study is motivated by thebreakthrough in synthesis of novel organic materials possessingprespecified nonlinear optical properties and which has led toa multitude of potential applications such as, for example, 3Dimaging and data storage, optical limiting and photodynamiccancer therapy. In order to clarify the underlying physics, astrict solution has been derived of the density matrixequations of a material aiming at an explicit treatment of itsnonlinear polarization without addressing a conventional Taylorexpansion over field amplitudes. Such a formalism is developedfor many-level molecules, allowing to solve the coupledMaxwell's and density matrix equations for the propagation of afew interacting laser pulses through a nonlinear molecularmedium. The theory presented is capable to account formulti-photon processes of an arbitrary order and for differentsaturation effects. The theory is applied to simulations oftwo- and three-photon absorption as well as to upconvertedstimulated emission of organic molecules in solvents.

The second part of the thesis is devoted to resonant X-rayRaman scattering from free molecules, solutions and polymerfilms. The temporal analysis of the spectral profiles isperformed using the technique of scattering duration whichallows to select physical processes with different time scales.The slowing-down/speeding-up of the scattering by frequencydetuning provides insight in the formation of the differentparts of the scattering profile like atomic and molecularbands, resonant and vertical scattering channels, anomalousenhancement of the Stokes doubling effect. The lifetimevibrational interference (LVI), playing a crucial role inresonant scattering, is found to strongly influence thedispersion of the Auger resonances of polymers in agreementwith experiment. An almost complete quenching of the scatteringcross section by LVI is observed for the N₂molecule. It is found that the interferenceelimination of the scattering amplitude gives valuableinformation on molecular geometry. The electron Doppler effectis minutely studied making use of a wave packet technique. Thesimulations show an "interference burning" of a narrow hole onthe top of the Doppler broadened profile of the Auger spectraof molecular oxygen. For the SF₆molecule the Auger Doppler effect is found to besensitive to the detuning due to the scattering anisotropy. Inall of these studies the temporal language was foundconstructive and enormously helpful for understanding theunderlying physical processes. Most theoretical predictionsmade have been verified by experiments.

III-V nanostructures have attracted substantial research effort due to their interesting physical properties and their applications in new generation of ultrafast and high efficiency nanoscale electronic and photonic components. The advances in nanofabrication methods including growth/synthesis have opened up new possibilities of realizing one dimensional (1D) nanostructures as building blocks of future nanoscale devices. For processing of semiconductor nanostructure devices, simplicity, cost effectiveness, and device efficiency are key factors. A number of methods are being pursued to fabricate high quality III-V nanopillar/nanowires, quantum dots and nano disks. Further, high optical quality nanostructures in these materials together with precise control of shapes, sizes and array geometries make them attractive for a wide range of optoelectronic/photonic devices. This thesis work is focused on top-down approaches for fabrication of high optical quality nanostructures in III-V materials. Dense and uniform arrays of nanopillars are fabricated by dry etching using self-assembly of colloidal SiO2 particles for masking. The physico-chemistry of etching and the effect of etch-mask parameters are investigated to control the shape, aspect ratios and spatial coverage of the nanopillar arrays. The optimization of etch parameters and the utilization of erosion of etch masks is evaluated to obtain desired pillar shapes from cylindrical to conical. Using this fabrication method, high quality nanopillar arrays were realized in several InP-based and GaAs-based structures, including quantum wells and multilayer heterostructures. Optical properties of these pillars are investigated using different optical spectroscopic techniques. These nanopillars, single and in arrays, show excellent photoluminescence (PL) at room temperature and the measured PL line-widths are comparable to the as-grown wafer, indicating the high quality of the fabricated nanostructures. The substrate-free InP nanopillars have carrier life times similar to reference epitaxial layers, yet an another indicator of high material quality. InGaAs layer, beneath the pillars is shown to provide several useful functions. It effectively blocks the PL from the InP substrate, serves as a sacrificial layer for generation of free pillars, and as a “detector” in cathodoluminescence (CL) measurements. Diffusion lengths independently determined by time resolved photoluminescence (TRPL) and CL measurements are consistent, and carrier feeding to low bandgap InGaAs layer is evidenced by CL data. Total reflectivity measurements show that nanopillar arrays provide broadband antireflection making them good candidates for photovoltaic applications.  A novel post etch, sulfur-oleylamine (S-OA) based chemical process is developed to etch III-V materials with monolayer precision, in an inverse epitaxial manner along with simultaneous surface passivation. The process is applied to push the limits of top-down fabrication and InP-based high optical quality nanowires with aspect ratios more than 50, and nanostructures with new topologies (nanowire meshes and in-plane wires) are demonstrated.  The optimized process technique is used to fabricate nanopillars in InP-based multilayers (InP/InGaAsP/InP and InP/InGaAs/InP). Such multilayer nanopillars are not only attractive for broad-band absorption in solar cells, but are also ideal to generate high optical quality nanodisks of these materials. Finally, the utility of a soft stamping technique to transfer free nanopillars/wires and nanodisks onto Si substrate is demonstrated. These nanostructures transferred onto Si with controlled densities, from low to high, could provide a new route for material integration on Si.

QC 20130205

碩士
國立中山大學
光電工程學系研究所
100
In this thesis, we investigated charge carrier properties of two series of organic semiconductors with time of flight measurement. Charge carrier mobility is calculated in different electron filed and fitted to Poole-Frenkel model. In the first part, we investigated carrier properties of pyrrole derivatives .The mea- surement result of pyrrole derivatives with different functional group indicate that trans- port properties may effected by this different functional group and the bonding position. There have two different type of transport properties that is single transport and bipolar transport. In addition, carrier mobility have more than two order difference with this different functional group. Finally, we investigated carrier properties of anthracene derivatives. The measure- ment result indicate that the intermolecular aggregation can be solved by synthesizing another functional group to form polymer. This method not only perform excellent thin film stability but also keep bipolar transport property after synthesizing.

In this work, we elucidated recombination kinetics in organic and hybrid semiconductors by steady-state and time-resolved PL spectroscopy. Using these simple and very flexible experimental techniques, we probed the infrared emission from recombining free charge carriers in metal–halide perovskites, as well as the deep blue luminescence from intramolecular charge-transfer states in novel OLED emitters. We showed that similar state diagrams and kinetic models accurately describe the dynamics of excited species in these very different material systems. In Chapters 4 and 5, we focused on lead iodide perovskites (MAPI and FAPI), whose comparatively developed deposition techniques suited the systematic material research. In MAPI, we harnessed the anomalous dependence of transient PL on the laser repetition rate in order to investigate the role of interfaces with the commonly used charge-selective layers: PC60BM, spiro-MeOTAD, and P3HT. The film was deposited on a large precut substrate and separated into several parts, which were then covered with the charge-selective layers. Thereby, the same bulk perovskite structure was maintained for all samples. Consequently, we were able to isolate interface-affected and bulk carrier recombination. The first one dominated the fast component of PL decay up to 300 ns, whereas the last was assigned to the remaining slow component. The laser repetition rate significantly prolonged PL decay in MAPI with additional interfaces while shortening the charge carrier lifetime in the pristine film. We qualitatively explained this effect by a kinetic model that included radiative electron–hole recombination and nonradiative trap-assisted recombination. All in all, we showed that the apparent PL lifetime in MAPI is to large extend defined by the laser repetition rate and by the adjacent interfaces. Further, we studied photon recycling in MAPI and FAPI. We monitored how the microscopic PL transforms while propagating through the thin perovskite film. The emission was recorded within 5orders of magnitude in intensity up to 70μm away from the excitation spot. The Beer–Lambert law previously failed to describe the complex interplay of the intrinsic PL spectrum and the additional red-shifted peak. Therefore, we developed a general numerical model that accounts for self-absorption and diffusion of the secondary charge carriers. A simulation based on this model showed excellent agreement with the experimental spatially resolved PL maps. The proposed model can be applied to any perovskite film, because it uses easily measurable intrinsic PL spectrum and macroscopic absorption coefficient as seeding parameters. In Chapter 6, we conducted an extensive photophysical study of a novel compact deep blue OLED emitter, SBABz4, containing spiro-biacridine and benzonitrile units. We also considered its single-donor monomer counterpart, DMABz4, in order to highlight the structure–property relationships. Both compounds exhibited thermally activated delayed fluorescence (TADF), which was independently proven by oxygen quenching and temperature-dependent transient PL measurements. The spiro-linkage in the double-donor core of SBABz4 rendered its luminescence pure blue compared to the blue-green emission from the single-donor DMABz4. Thus, the core-donor provided desirable color tuning in the deep blue region, as opposed to the common TADF molecular design with core-acceptor. Using PL lifetimes and efficiencies, we predicted EQEmax = 7.1% for SBABz4-based OLED, whereas a real test device showed EQEmax = 6.8%. Transient PL was recorded from the solutions and solid films in the unprecedentedly broad dynamic range covering up to 6orders of magnitude in time and 8orders of magnitude in intensity. The stretched exponent was shown to fit the transient PL in the films very well, whereas PL decay in dilute solution was found purely exponential. When the emitter was embedded in the host matrix that prevented aggregation, its TADF properties were superior in comparison with the pure SBABz4 film. Finally, using temperature-dependent transient PL data, we calculated the TADF activation energy of 70 meV. To sum up, this Thesis contributes to the two fascinating topics of the last decade’s material research: perovskite absorbers for photovoltaics and TADF emitters for OLEDs. We were lucky to work with the emerging systems and tailor for them new models out of the well-known physical concepts. This was both exciting and challenging. In the end, science of novel materials is always a mess. We hope that we brought there a bit of clarity and light
Im Rahmen dieser Arbeit wurden Rekombinationsmechanismen in organischen und hybriden Halbleitern mittels statischer und zeitaufgelöster Photolumineszenz-Spektroskopie untersucht. Diese einfachen und flexiblen experimentellen Methoden erlaubten es, sowohl die infrarote Emission rekombinierender freier Ladungsträger in Perowskiten als auch die blaue Lumineszenz intramolekularer Ladungstransferzustände in neuartigen OLED-Emittern zu erforschen. Es wurde gezeigt, dass das Verhalten angeregter Ladungsträger in sehr unterschiedlichen Materialsystemen durch vergleichbare Zustandsdiagramme und kinetische Modelle beschrieben werden kann. Kapitel 4 und 5 legen den Fokus auf Bleiiodid-Perowskite (MAPI und FAPI), deren vergleichsweise etablierte Herstellungsmethode systematische Untersuchungen erlaubt. In MAPI wurde die anomale Abhängigkeit transienter PL von der Repetitionsrate des Lasers verwendet, um die Bedeutung der Grenzflächen zwischen Perowskitschicht und den gängigsten ladungsselektiven Schichten PC60BM, spiro-MeOTAD und P3HT zu untersuchen. Dafür wurde die Perowskitschicht auf ein Substrat aufgebracht, dieses in mehrere gleiche Stücke geteilt und anschließend mit einer jeweils unterschiedlichen ladungsselektiven Schicht bedeckt. Dies sicherte die Vergleichbarkeit der aktiven Schicht der verschiedenen Proben. Durch diesen Ansatz konnten der Einfluss des aktiven Materials als auch der seiner Grenzflächen auf die Ladungsträgerrekombination getrennt beobachtet werden. Ersterer dominierte den schnellen Anteil des PL-Abfalls, letzterer den langsamen Anteil. Die Repetitionsrate des Lasers verlangsamte den PL-Abfall in MAPI-Filmen mit zusätzlichen Grenzflächen signifikant, während sie die Lebensdauer der Ladungsträger in reinen MAPI- Filmen verkürzte. Dieser Effekt konnte durch ein qualitatives Modell erklärt werden, welches strahlende Elektron–Loch-Rekombination sowie nichtstrahlende Rekombination über Ladungsträgerfallen miteinbezieht. Insgesamt konnte gezeigt werden, dass die PL- Lebensdauer in MAPI stark von der Laserrepetitionsrate sowie von Grenzflächeneffekten abhängig ist. Des Weiteren wurde der Photon-Recycling-Effekt in MAPI und FAPI untersucht. Dafür wurde verfolgt, wie sich die lokale PL mit ihrer Ausbreitung durch den dünnen Perowskitfilm verändert. Die Emission konnte bis zu 70 μm entfernt von der Anregung gemessen werden, bei einer Abnahme der Intensität um fünf Größenordnungen. Mit reiner Anwendung des Lambert–Beer’sches Gesetzes konnte das auftretende komplexe Zusammenspiel des ursprünglichen Spektrums mit einer zusätzlichen rotverschobenen Emission nicht erklärt werden. Deshalb wurde ein allgemeines numerisches Modell entwickelt, das sowohl Selbstabsorption als auch die Diffusion sekundärer Ladungsträger berücksichtigt. Entsprechende Simulationen zeigten hervorragende Übereinstimmung mit räumlich aufgelösten experimentellen PL-Messungen. Das Modell kann auf jeden Perwoskitfilm angewendet werden, da die nötigen Parameter auf dem einfach messbaren intrinsischen PL- Spektrum und dem makroskopischen Absorptionskoeffizienten des jeweiligen Films beruhen. In Kapitel6 wird die umfangreiche photophysikalische Untersuchung eines neuartigen kompakten blauen OLED-Emitters, SBABz4, welcher Spiro-Biacridine und Benzonitril-Einheiten enthält, beschrieben. Auch sein Gegenstück DMABz4, als einfacher Donator, wurde betrachtet, um Zusammenhänge zwischen Struktur und Materialeigenschaften hervorzuheben. Beide Verbindungen zeigten thermisch-aktivierte verzögerte Fluoreszenz (TADF), welche unabhängig voneinander sowohl durch Sauerstoff- Fluoreszenzlöschung als auch durch temperaturabhängige transiente PL-Messungen nachgewiesen wurde. Die Spiro-Bindung im Inneren des zweifachen Donators SBABz4 führten zu einer, im Vergleich zur blaugrünen Emission des einfachen Donators DMABz4, reinen blauen Lumineszenz. Im Gegensatz zum Aufbau üblicher TADF-Molekülen mit zentralem Akzeptor, erlaubt in diesem Fall der zentrale Donator also die gewünschte Farbeinstellung im tiefblauen Bereich. Mit Hilfe von PL-Lebensdauern und -Effizienzen wurde eine EQEmax von 7.1% für SBABz4-basierte OLEDs abgeschätzt, während ein reales Testexemplar eine EQEmax von 6.8% aufzeigte. Transiente PL wurde für Lösungen sowie für feste Filme in einem beispiellos großen, dynamischen Bereich von sechs Größenordnungen in Zeit und acht Größenordnungen in Intensität aufgenommen. Die transiente PL der Filme lässt sich gut durch eine gestreckte Exponentialfunktion anpassen, während der PL-Abfall der Lösung rein exponentiell verläuft. Die Einbettung des Emitters in der Gast-Matrix, die Aggregieren verhinderte, führten zu gegenüber dem reinen SBABz4-Film überlegenen TADF- Eigenschaften. Zuletzt wurde die TADF Aktivierungsenergie von 70 meV unter alleiniger Verwendung der temperaturabhängigen transienten PL berechnet. Zusammengefasst steuert diese Doktorarbeit einen Beitrag zu zwei der faszinierendsten Themen der Materialforschung des letzten Jahrzehnts bei: Perowskitabsorbern für die Photovoltaik und TADF-Emittern für OLEDs. Diese Arbeit erlaubte es mit aufkommenden Systemen zu arbeiten und neue Modelle aus bekannten physikalischen Konzepten für sie zu entwickeln. Dies war sowohl spannend als auch anspruchsvoll. Letztlich ist Forschung an neuartigen Materialien immer ein großes Durcheinander. Hoffentlich konnte durch diese Arbeit jedoch ein wenig mehr Klarheit geschaffen werden

碩士
元智大學
光電工程研究所
97
Due to photovoltaic conversion efficiency of the organic polymer solar cells is closely related the charge transport mobility. But it’s low carrier mobility in organic polymer. So, in this study would change the poly-disperity in MEH-PPV to improve the hole mobility. We used chlorobenzene to be the dissolving for MEH-PPV and drop-cast fabricate thick films. Measurement the MEH-PPV hole mobility and poly- dispersity by time of flight method, photoluminescence, hotoluminescence excitation, and GPC. Experimental results show, the holes mobility are improved for change the poly-dispersity MEH-PPV. And then, the photovoltaic conversion efficiency of the organic polymer solar cells will be raised.

The developement of a femtosecond-time-resolved spectroscopic ellipsometry setup based on a pump-probe technique is described. The characterization of the setup is presented as well as first results of experiments on a c-plane oriented ZnO thin film are shown. Indications for the study of fast charge-carrier dynamics are given.:Introduction 1 1 Theoretical framework 3 1.1 Zinc oxide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1.1 Crystal and band structure . . . . . . . . . . . . . . . . . . . . . 3 1.1.2 Excitons . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1.2 Dielectric function and electronic transitions . . . . . . . . . . . . . . . . 5 1.2.1 Electronic transitions . . . . . . . . . . . . . . . . . . . . . . . . . 5 1.2.2 Dielectric function . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1.3 Charge carrier dynamics . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1.3.1 High excitation effects . . . . . . . . . . . . . . . . . . . . . . . . 8 1.3.2 Charge carrier density-dependent dielectric function model . . . . 9 1.4 Light polarization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2 Preliminary experiments 14 2.1 Methods and instrumentation . . . . . . . . . . . . . . . . . . . . . . . . 14 2.2 Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 2.3 Experimental challenges . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 2.4 Results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 2.4.1 Time-integrated micro-ellipsometry . . . . . . . . . . . . . . . . . 28 2.4.2 Time-resolved ellipsometry . . . . . . . . . . . . . . . . . . . . . . 31 2.4.3 Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 3 Conclusive experiments at ELI Beamlines 35 3.1 Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 3.2 Samples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 3.3 Demonstration of functionality . . . . . . . . . . . . . . . . . . . . . . . . 49 3.3.1 Time-resolved reflectometry . . . . . . . . . . . . . . . . . . . . . 49 3.3.2 Time-resolved ellipsometry . . . . . . . . . . . . . . . . . . . . . . 51 4 Results and discussion 55 4.1 Time-resolved reflectometry . . . . . . . . . . . . . . . . . . . . . . . . . 55 4.2 Time-resolved ellipsometry . . . . . . . . . . . . . . . . . . . . . . . . . . 60 5 Summary and outlook 63

Die vorliegende Arbeit beschäftigt sich mit der Entwicklung eines neuartigen, autarken, folienbasierten Sensorsystems für die Belastungsdetektion an Leichtbaumaterialien. Das integrierte Sensorsystem ist in der Lage mechanische Belastungen über die Photolumineszenz von Quantum Dots visuell darzustellen, wodurch strukturelle Defekte in Leichtbaumaterialien frühzeitig erkannt und ein Totalausfall einer gesamten Leichtbaukonstruktion verhindert werden kann. Dies führt neben einer erhöhten Sicherheit einzelner Komponenten und kompletter Konstruktionen auch zu Gewichts-, Kosten- und Rohstoffersparnissen. Die gezielte Beeinflussung der Photolumineszenz von Quantum Dots durch Ladungsträgerinjektion als Hauptmechanismus des Sensorsystems erfordert spezielle Lagenaufbauten von Dünnschichtsystemen. Durch die Kombination dieser Dünnschichtsysteme mit piezoelektrischen Materialien entsteht ein autarkes Sensorsystem, wodurch eine Auswertung, Visualisierung und Speicherung der Information über eine stattgefundene mechanische Belastung an Leichtbaumaterialien auf kleinsten Raum erreicht wird.:Inhaltsverzeichnis Formelverzeichnis Abkürzungsverzeichnis Vorwort 1 Einleitung 1.1 Motivation 1.2 Zielstellung 2 Autarker Sensor für mechanische Beanspruchungen 2.1 Sensorkonzept, -aufbau und Funktionsweise 2.2 Anforderungen an die Funktionalität 2.3 Stand der Technik 3 Theoretische Grundlagen 3.1 Quantum Dots 3.1.1 Größenquantisierungseffekt 3.1.2 Photolumineszenz 3.1.3 Aufbau und Materialien 3.1.4 Kommerziell erhältliche Quantum Dots 3.2 Mechanismen zur Beeinflussung der Photolumineszenz 3.2.1 Ladungsträgerinjektion in den QD Kern 3.2.2 Feldinduzierte Ionisation des Exzitons 3.2.3 Weitere Mechanismen 3.3 Ladungsträgertransportschichten 3.3.1 Poly(N-vinylkarbazol) 3.3.2 N,N,N´,N´-Tetrakis(3-methylphenyl)-3,3´-dimethylbenzidin 3.3.3 Poly(3,4-ethylendioxythiophen)-poly(styrolsulfonat) 3.4 Lithiumfluorid als elektrischer Isolator 3.5 Modellsysteme 3.5.1 Einbettung der QDs in organische Lochtransportschichten 3.5.2 QDs zwischen Elektrode und organischer Lochtransportschicht 3.5.3 QDs zwischen Elektrode und Nichtleiter 4 Experimentelle Vorgehensweise 4.1 Layout und Kontaktierung von Teststrukturen 4.2 Verfahren zur Herstellung dünner Schichten 4.2.1 Physikalische Gasphasenabscheidung 4.2.2 Rotationsbeschichtung 4.2.3 Weitere Verfahren 4.3 Charakterisierung der Schichten und der Gesamtfunktionalität 4.3.1 Mikrospektroskopieaufbau 4.3.2 Weitere Messverfahren 4.4 Integration der Schichtstapel in Faserkunststoffverbund 5 Experimentelle Untersuchungen 5.1 Einordnung der einzelnen Schichten der Modellsysteme 5.1.1 Elektroden 5.1.2 Matrixmaterial und Quantum Dots 5.2 Einordnung des elektrischen Verhaltens der Modellsysteme 5.2.1 Modellsystem I 5.2.2 Modellsystem II 5.2.3 Modellsystem III 5.3 Einfluss externer Beleuchtung am Modellsystem II und III 5.3.1 Modellsystem II 5.3.2 Modellsystem III 5.4 Wiederholbarkeit der elektrischen Beanspruchung am Modellsystem III 5.4.1 Photolumineszenzintensität 5.4.2 Stromdichte 5.4.3 Gesamtwiderstand im Schichtstapel 5.5 Einfluss des elektrischen Feldes am Modellsystem III 5.5.1 Photolumineszenzintensität 5.5.2 Stromdichte 5.5.3 Widerstand 5.6 Einfluss der Integration auf das Verhalten von Modellsystem III 5.6.1 Optisches Verhalten der Laminiertasche und des Harzsystems 5.6.2 Funktionalität des Schichtstapels nach der Integration 5.7 Temperaturwechseltest am integrierten Schichtstapel 5.8 Speicherzeit elektrischer Ladungsträger am Modellsystem III 5.8.1 Stabilität des Lasers und der PL Intensität 5.8.2 Reproduzierbarkeit 5.8.3 Langzeitmessung 5.9 Kopplung des Schichtsystems mit piezoelektrischem Element 6 Zusammenfassung und Ausblick 6.1 Zusammenfassung 6.2 Ausblick Anhang A : Layouts für untere Elektrode E1 und obere Elektrode E2 Anhang B : Halter für die Kontaktierung der Teststrukturen Anhang C : Frontpanel zur Aufnahme der Photolumineszenz Anhang D : Messdaten Profilometer Veeco Dektak 150 Literaturverzeichnis Abbildungsverzeichnis Tabellenverzeichnis Lebenslauf
This work focuses on the development of a novel, self-sufficient, film-based sensor system for load detection on lightweight materials. The integrated sensor system is capable to visualize mechanical loads on lightweight structures by quenching the photoluminescence of quantum dots. Structural defects in lightweight materials can thus be detected at an early stage and total failure of an entire lightweight structure can be prevented. In addition to increased safety of individual components and complete structures, this also leads to weight, cost and raw material savings. The quenching of the photoluminescence of quantum dots by charge carrier injection as the main mechanism of the sensor system requires special thin-film layer stacks. By combining these thin-film layer stacks with piezoelectric materials, a self-sufficient sensor system is created. An evaluation, visualization and storage of the information about a mechanical load that has taken place on lightweight materials is thus achieved in a very small space.:Inhaltsverzeichnis Formelverzeichnis Abkürzungsverzeichnis Vorwort 1 Einleitung 1.1 Motivation 1.2 Zielstellung 2 Autarker Sensor für mechanische Beanspruchungen 2.1 Sensorkonzept, -aufbau und Funktionsweise 2.2 Anforderungen an die Funktionalität 2.3 Stand der Technik 3 Theoretische Grundlagen 3.1 Quantum Dots 3.1.1 Größenquantisierungseffekt 3.1.2 Photolumineszenz 3.1.3 Aufbau und Materialien 3.1.4 Kommerziell erhältliche Quantum Dots 3.2 Mechanismen zur Beeinflussung der Photolumineszenz 3.2.1 Ladungsträgerinjektion in den QD Kern 3.2.2 Feldinduzierte Ionisation des Exzitons 3.2.3 Weitere Mechanismen 3.3 Ladungsträgertransportschichten 3.3.1 Poly(N-vinylkarbazol) 3.3.2 N,N,N´,N´-Tetrakis(3-methylphenyl)-3,3´-dimethylbenzidin 3.3.3 Poly(3,4-ethylendioxythiophen)-poly(styrolsulfonat) 3.4 Lithiumfluorid als elektrischer Isolator 3.5 Modellsysteme 3.5.1 Einbettung der QDs in organische Lochtransportschichten 3.5.2 QDs zwischen Elektrode und organischer Lochtransportschicht 3.5.3 QDs zwischen Elektrode und Nichtleiter 4 Experimentelle Vorgehensweise 4.1 Layout und Kontaktierung von Teststrukturen 4.2 Verfahren zur Herstellung dünner Schichten 4.2.1 Physikalische Gasphasenabscheidung 4.2.2 Rotationsbeschichtung 4.2.3 Weitere Verfahren 4.3 Charakterisierung der Schichten und der Gesamtfunktionalität 4.3.1 Mikrospektroskopieaufbau 4.3.2 Weitere Messverfahren 4.4 Integration der Schichtstapel in Faserkunststoffverbund 5 Experimentelle Untersuchungen 5.1 Einordnung der einzelnen Schichten der Modellsysteme 5.1.1 Elektroden 5.1.2 Matrixmaterial und Quantum Dots 5.2 Einordnung des elektrischen Verhaltens der Modellsysteme 5.2.1 Modellsystem I 5.2.2 Modellsystem II 5.2.3 Modellsystem III 5.3 Einfluss externer Beleuchtung am Modellsystem II und III 5.3.1 Modellsystem II 5.3.2 Modellsystem III 5.4 Wiederholbarkeit der elektrischen Beanspruchung am Modellsystem III 5.4.1 Photolumineszenzintensität 5.4.2 Stromdichte 5.4.3 Gesamtwiderstand im Schichtstapel 5.5 Einfluss des elektrischen Feldes am Modellsystem III 5.5.1 Photolumineszenzintensität 5.5.2 Stromdichte 5.5.3 Widerstand 5.6 Einfluss der Integration auf das Verhalten von Modellsystem III 5.6.1 Optisches Verhalten der Laminiertasche und des Harzsystems 5.6.2 Funktionalität des Schichtstapels nach der Integration 5.7 Temperaturwechseltest am integrierten Schichtstapel 5.8 Speicherzeit elektrischer Ladungsträger am Modellsystem III 5.8.1 Stabilität des Lasers und der PL Intensität 5.8.2 Reproduzierbarkeit 5.8.3 Langzeitmessung 5.9 Kopplung des Schichtsystems mit piezoelektrischem Element 6 Zusammenfassung und Ausblick 6.1 Zusammenfassung 6.2 Ausblick Anhang A : Layouts für untere Elektrode E1 und obere Elektrode E2 Anhang B : Halter für die Kontaktierung der Teststrukturen Anhang C : Frontpanel zur Aufnahme der Photolumineszenz Anhang D : Messdaten Profilometer Veeco Dektak 150 Literaturverzeichnis Abbildungsverzeichnis Tabellenverzeichnis Lebenslauf