Статті в журналах з теми "Leakage Current Density"
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Kawahara, Takamitsu, Naoki Hatta, Kuniaki Yagi, Hidetsugu Uchida, Motoki Kobayashi, Masayuki Abe, Hiroyuki Nagasawa, Bernd Zippelius, and Gerhard Pensl. "Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC." Materials Science Forum 645-648 (April 2010): 339–42. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.339.
Повний текст джерелаTamada, Minoru, Yuji Noguchi, and Masaru Miyayama. "Defects and Leakage Current in PbTiO3 Single Crystals." Key Engineering Materials 350 (October 2007): 77–80. http://dx.doi.org/10.4028/www.scientific.net/kem.350.77.
Повний текст джерелаKim, Hyung Chul, Moon Seob Han, Hyun June Park, Dong Uk Jang, Gyung Suk Kil, and Nirmal Kumar Nair. "Consideration of Uncertainty in Diagnosis for Railway Arrester." Key Engineering Materials 321-323 (October 2006): 1507–12. http://dx.doi.org/10.4028/www.scientific.net/kem.321-323.1507.
Повний текст джерелаIshikawa, Tsuyoshi, T. Katsuno, Y. Watanabe, H. Fujiwara, and T. Endo. "Critical Density of Nanoscale Pits for Suppressing Variability in Leakage Current of a SiC Schottky Barrier Diode." Materials Science Forum 717-720 (May 2012): 371–74. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.371.
Повний текст джерелаHirokazu, Fujiwara, T. Katsuno, Tsuyoshi Ishikawa, H. Naruoka, Masaki Konishi, T. Endo, Y. Watanabe, et al. "Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes." Materials Science Forum 717-720 (May 2012): 911–16. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.911.
Повний текст джерелаUno, Shigeyasu, Kazuaki Deguchi, Yoshinari Kamakura, and Kenji Taniguchi. "Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current." Japanese Journal of Applied Physics 41, Part 1, No. 4B (April 30, 2002): 2645–49. http://dx.doi.org/10.1143/jjap.41.2645.
Повний текст джерелаKim, Hyojung, Jongwoo Park, Junehwan Kim, Nara Lee, Gaeun Lee, Soonkon Kim, Pyungho Choi, Dohyun Beak, Jangkun Song, and Byoungdeog Choi. "Leakage Current Analysis Method for Metal Insulator Semiconductor Capacitors Through Low-Frequency Noise Measurement." Journal of Nanoscience and Nanotechnology 21, no. 3 (March 1, 2021): 1966–70. http://dx.doi.org/10.1166/jnn.2021.18901.
Повний текст джерелаNegara, I. Made Yulistya, I. G. N. Satriyadi Hernanda, Dimas Anton Asfani, Mira Kusuma Wardani, Bonifacius Kevin Yegar, and Reynaldi Syahril. "Effect of Seawater and Fly Ash Contaminants on Insulator Surfaces Made of Polymer Based on Finite Element Method." Energies 14, no. 24 (December 20, 2021): 8581. http://dx.doi.org/10.3390/en14248581.
Повний текст джерелаGeng, Kuiwei, Ditao Chen, Quanbin Zhou, and Hong Wang. "AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer." Electronics 7, no. 12 (December 10, 2018): 416. http://dx.doi.org/10.3390/electronics7120416.
Повний текст джерелаAlbertin, Katia F., M. A. Valle, and I. Pereyra. "Study Of MOS Capacitors With TiO2 And SiO2/TiO2 Gate Dielectric." Journal of Integrated Circuits and Systems 2, no. 2 (November 18, 2007): 89–93. http://dx.doi.org/10.29292/jics.v2i2.272.
Повний текст джерелаSikula, J., J. Hlavka, J. Pavelka, V. Sedlakova, L. Grmela, M. Tacano, and S. Hashiguchi. "Low Frequency Noise of Tantalum Capacitors." Active and Passive Electronic Components 25, no. 2 (2002): 161–67. http://dx.doi.org/10.1080/08827510212341.
Повний текст джерелаHirokazu, Fujiwara, Masaki Konishi, T. Ohnishi, T. Nakamura, Kimimori Hamada, T. Katsuno, Y. Watanabe, et al. "Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density." Materials Science Forum 679-680 (March 2011): 694–97. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.694.
Повний текст джерелаChen, Zhisheng, Renjun Song, Qiang Huo, Qirui Ren, Chenrui Zhang, Linan Li, and Feng Zhang. "Analysis of Leakage Current of HfO2/TaOx-Based 3-D Vertical Resistive Random Access Memory Array." Micromachines 12, no. 6 (May 26, 2021): 614. http://dx.doi.org/10.3390/mi12060614.
Повний текст джерелаNurbaya, Z., and M. Rusop. "Low Leakage Current Density Behaviour of Nanofilms PbTiO3 Based MIM Capacitor." Advanced Science Letters 20, no. 10 (October 1, 2014): 2258–63. http://dx.doi.org/10.1166/asl.2014.5712.
Повний текст джерелаWöhler, Franziska J., Ingo Münch, and Werner Wagner. "Electric leakage current density in phase field simulations for nanogenerator concepts." PAMM 17, no. 1 (December 2017): 575–76. http://dx.doi.org/10.1002/pamm.201710257.
Повний текст джерелаIn, Tae-Gyoung, Sunggi Baik, and Sangsub Kim. "Leakage current of Al- or Nb-doped Ba0.5Sr0.5TiO3 thin films by rf magnetron sputtering." Journal of Materials Research 13, no. 4 (April 1998): 990–94. http://dx.doi.org/10.1557/jmr.1998.0139.
Повний текст джерелаYu, Tong, Yun Liu, Binbin Huang, Xiaoyang Chen, and Ping Yu. "Modulating multiple leakage current mechanisms in the [LaNiO3/Ba0.67Sr0.33TiO3]3 multilayer heterostructure thin films via dielectrics/electrode interface modifications." AIP Advances 12, no. 12 (December 1, 2022): 125309. http://dx.doi.org/10.1063/5.0129495.
Повний текст джерелаVoitsekhovskii, A. V., S. N. Nesmelov, S. M. Dzyadukh, S. A. Dvoretsky, N. N. Mikhailov, G. Yu Sidorov, and M. V. Yakushev. "Dark currents of unipolar barrier structures based on mercury cadmium telluride for long-wave inred detectors." Izvestiya vysshikh uchebnykh zavedenii. Fizika, no. 5 (2021): 3–8. http://dx.doi.org/10.17223/00213411/64/5/3.
Повний текст джерелаWani, Waseem Ahmad, Nilofar Naaz, B. Harihara Venkataraman, Souvik Kundu, and Kannan Ramaswamy. "Significantly reduced leakage current density in Mn-doped BiFeO3 thin films deposited using spin coating technique." Journal of Physics: Conference Series 2070, no. 1 (November 1, 2021): 012088. http://dx.doi.org/10.1088/1742-6596/2070/1/012088.
Повний текст джерелаTian, Dong Bin, Qi Feng Pan, Xiao Zhou He, and Xuan Hong Zhang. "Reduce the Leakage Current of High Voltage Polymer Ta Electrolyte Capacitors." Materials Science Forum 852 (April 2016): 686–90. http://dx.doi.org/10.4028/www.scientific.net/msf.852.686.
Повний текст джерелаMahi, K., and H. Ait-Kaci. "Experimental Method to Quantify the Leakage Currents of Solar Cells from Current Density-Voltage Characteristics." Journal of Nano- and Electronic Physics 13, no. 5 (2021): 05019–1. http://dx.doi.org/10.21272/jnep.13(5).05019.
Повний текст джерелаKudou, Chiaki, Hirokuni Asamizu, Kentaro Tamura, Johji Nishio, Keiko Masumoto, Kazutoshi Kojima, and Toshiyuki Ohno. "Influence of Epi-Layer Growth Pits on SiC Device Characteristics." Materials Science Forum 821-823 (June 2015): 177–80. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.177.
Повний текст джерелаHe, Mo, Qi Bin Liu, and Chang Qi Xia. "Study on Microstructure of ZnO Lighting Arrester with High Voltage Gradient." Advanced Materials Research 415-417 (December 2011): 1070–73. http://dx.doi.org/10.4028/www.scientific.net/amr.415-417.1070.
Повний текст джерелаKim, Nam-Kyeong, Soon-Gil Yoon, Won-Jae Lee, and Ho-Gi Kim. "Electrical and Structural Properties of SrTiO3 Thin Films Deposited by Plasma-enhanced Metalorganic Chemical Vapor Deposition." Journal of Materials Research 12, no. 4 (April 1997): 1160–64. http://dx.doi.org/10.1557/jmr.1997.0160.
Повний текст джерелаLee, Jae-Hoon, Jung-Hee Lee, and Ki-Sik Im. "Effects of Al Composition and High-Temperature Atomic Layer-Deposited Al2O3 Layer on the Leakage Current Characteristics of AlGaN/GaN Schottky Barrier Diodes." Crystals 11, no. 2 (January 21, 2021): 87. http://dx.doi.org/10.3390/cryst11020087.
Повний текст джерелаSohail, Muhammad, Salman Amin, Yasir Butt, and Muhammad Bin Zubaid Ramay. "Aging Performance of Low-Density Polyethylene/Silicone Rubber Blends Insulators Under Contaminated Conditions." Pakistan Journal of Engineering and Technology 5, no. 1 (March 10, 2022): 29–34. http://dx.doi.org/10.51846/vol5iss1pp29-34.
Повний текст джерелаRamos, D., M. Delmas, R. Ivanov, D. Evans, L. Žurauskaitė, S. Almqvist, S. Becanovic, L. Höglund, E. Costard, and P. E. Hellström. "Quasi-3-dimensional simulations and experimental validation of surface leakage currents in high operating temperature type-II superlattice infrared detectors." Journal of Applied Physics 132, no. 20 (November 28, 2022): 204501. http://dx.doi.org/10.1063/5.0106878.
Повний текст джерелаPengchan, W., T. Phetchakul, and Amporn Poyai. "Extraction of Defect in Doping Silicon Wafer by Analyzing the Lifetime Profile Method." Advanced Materials Research 55-57 (August 2008): 765–68. http://dx.doi.org/10.4028/www.scientific.net/amr.55-57.765.
Повний текст джерелаKang, H. D. "Trap-density dependent leakage current behavior of lead zirconate titanite thin film." Thin Solid Films 516, no. 8 (February 2008): 2014–16. http://dx.doi.org/10.1016/j.tsf.2007.06.167.
Повний текст джерелаChandel, Shilpi, Preeti Thakur, and Atul Thakur. "Low leakage current density and improved dielectric behavior of BiFexO3 nano-ceramics." Journal of Alloys and Compounds 845 (December 2020): 156287. http://dx.doi.org/10.1016/j.jallcom.2020.156287.
Повний текст джерелаMousavi, Navid, Tohid Rahimi, and Homayoun Meshgin Kelk. "Reduction EMI of BLDC Motor Drive Based on Software Analysis." Advances in Materials Science and Engineering 2016 (2016): 1–9. http://dx.doi.org/10.1155/2016/1497360.
Повний текст джерелаTan, Suo Kui, Xiao Ping Song, Li Qiao, Hong Yan Guo, Song Ji, and Hong Zhao. "The Effect of Heat Treatment Temperature on Property and Structure of Ni Group Core-Shell Particles ER." Advanced Materials Research 213 (February 2011): 437–40. http://dx.doi.org/10.4028/www.scientific.net/amr.213.437.
Повний текст джерелаLi, Li, and Qi Bin Liu. "Effect of Technological Parameters on the Microstructure and Electrical Properties of ZnO Varistors." Advanced Materials Research 820 (September 2013): 208–11. http://dx.doi.org/10.4028/www.scientific.net/amr.820.208.
Повний текст джерелаSalem, Ali Ahmed, Kwan Yiew Lau, Mohd Taufiq Ishak, Zulkurnain Abdul-Malek, Samir A. Al-Gailani, Salem Mgammal Al-Ameri, Ammar Mohammed, Abdulaziz Ali Saleh Alashbi, and Sherif S. M. Ghoneim. "Monitoring Porcelain Insulator Condition Based on Leakage Current Characteristics." Materials 15, no. 18 (September 14, 2022): 6370. http://dx.doi.org/10.3390/ma15186370.
Повний текст джерелаSchoeck, Johannes, Jonas Buettner, Mathias Rommel, Tobias Erlbacher, and Anton J. Bauer. "4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current Density." Materials Science Forum 897 (May 2017): 427–30. http://dx.doi.org/10.4028/www.scientific.net/msf.897.427.
Повний текст джерелаPEREZ, J. P., P. SIGNORET, M. MYARA, I. ASAAD, and B. ORSAL. "SURFACE LEAKAGE CURRENT RELATED $\frac{1}{f}$ NOISE IN NONILLUMINATED FOCAL PLANE ARRAY Hg1-xCdxTe DIODE." Fluctuation and Noise Letters 03, no. 04 (December 2003): L379—L388. http://dx.doi.org/10.1142/s0219477503001488.
Повний текст джерелаTitthikusumarn, Wiwa, Wittaya Jakpetch, and Wisut Titiroongruang. "Minority Carrier Lifetime Controlling of Mesa Diodes by Electron Beam Irradiation." Advanced Materials Research 811 (September 2013): 200–204. http://dx.doi.org/10.4028/www.scientific.net/amr.811.200.
Повний текст джерелаShi, Yan, Xing Liang Jiang, Qi Fa Wan, Xiong Wu, and Tao Xu. "Measurement and Analysis of the Leakage Current on the Surface of Polluted Suspension Ceramic Insulator." Applied Mechanics and Materials 48-49 (February 2011): 668–74. http://dx.doi.org/10.4028/www.scientific.net/amm.48-49.668.
Повний текст джерелаWang, Yang, De Xiang Fu, Wen Zhi Li, Jian Hua Wang, Wen Hao Zhang, Yong Tao Li, Sheng Li Liu, Liang Xie, and Hong Guang Zhang. "Effect of Annealing on Room Temperature Multiferroics of BiFe1-xCoxO3." Materials Science Forum 859 (May 2016): 30–35. http://dx.doi.org/10.4028/www.scientific.net/msf.859.30.
Повний текст джерелаUmezawa, Hitoshi, Kazuhiro Ikeda, Ramanujam Kumaresan, Natsuo Tatsumi, and Shinichi Shikata. "Device Characteristics Dependence on Diamond SDBs Area." Materials Science Forum 615-617 (March 2009): 1003–6. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.1003.
Повний текст джерелаAtalla, M. R. M., S. Assali, S. Koelling, A. Attiaoui, and O. Moutanabbir. "Dark current in monolithic extended-SWIR GeSn PIN photodetectors." Applied Physics Letters 122, no. 3 (January 16, 2023): 031103. http://dx.doi.org/10.1063/5.0124720.
Повний текст джерелаHuang, Yujie, Jing Yang, Degang Zhao, Yuheng Zhang, Zongshun Liu, Feng Liang, and Ping Chen. "A Study on the Increase of Leakage Current in AlGaN Detectors with Increasing Al Composition." Nanomaterials 13, no. 3 (January 28, 2023): 525. http://dx.doi.org/10.3390/nano13030525.
Повний текст джерелаWang, Yekan, Michael Evan Liao, Kenny Huynh, William Olsen, James C. Gallagher, Travis J. Anderson, Xianrong Huang, Michael Wojcik, and Mark S. Goorsky. "Impact of Substrate Defects on Vertical GaN Device Leakage Behavior." ECS Meeting Abstracts MA2022-01, no. 31 (July 7, 2022): 1309. http://dx.doi.org/10.1149/ma2022-01311309mtgabs.
Повний текст джерелаWu, Qiuju, Qing Yu, Gang He, Wenhao Wang, Jinyu Lu, Bo Yao, Shiyan Liu, and Zebo Fang. "Interface Optimization and Performance Enhancement of Er2O3-Based MOS Devices by ALD-Derived Al2O3 Passivation Layers and Annealing Treatment." Nanomaterials 13, no. 11 (May 26, 2023): 1740. http://dx.doi.org/10.3390/nano13111740.
Повний текст джерелаJayadevan, Kampurath P., Chi-Yi Liu, and Tseung-Yuen Tseng. "Surface Chemical and Leakage Current Density Characteristics of Nanocrystalline Ag-Ba0.5Sr0.5TiO3 Thin Films." Journal of the American Ceramic Society 88, no. 9 (September 2005): 2456–60. http://dx.doi.org/10.1111/j.1551-2916.2005.00441.x.
Повний текст джерелаWu, Min-Ci, Yi-Hsin Ting, Jui-Yuan Chen, and Wen-Wei Wu. "A Novel Three-Dimensional High Density Vertical Rram Arrays with Reduced Leakage Current." ECS Meeting Abstracts MA2020-01, no. 22 (May 1, 2020): 1298. http://dx.doi.org/10.1149/ma2020-01221298mtgabs.
Повний текст джерелаSimões, A. Z., L. S. Cavalcante, F. Moura, E. Longo, and J. A. Varela. "Structure, ferroelectric/magnetoelectric properties and leakage current density of (Bi0.85Nd0.15)FeO3 thin films." Journal of Alloys and Compounds 509, no. 17 (April 2011): 5326–35. http://dx.doi.org/10.1016/j.jallcom.2011.02.030.
Повний текст джерелаEl-Hag, Ayman H., S. H. Jayaram, and E. A. Cherney. "Calculation of leakage current density of silicone rubber insulators under accelerated aging conditions." Journal of Electrostatics 67, no. 1 (February 2009): 48–53. http://dx.doi.org/10.1016/j.elstat.2008.11.006.
Повний текст джерелаAkashe, Shyam, and Sanjay Sharma. "High density and low leakage current based SRAM cell using 45 nm technology." International Journal of Electronics 100, no. 4 (April 2013): 536–52. http://dx.doi.org/10.1080/00207217.2012.713023.
Повний текст джерелаSalem, Ali Ahmed, Kwan Yiew Lau, Zulkurnain Abdul-Malek, Nabil Mohammed, Abdullah M. Al-Shaalan, Abdullrahman A. Al-Shamma’a, and Hassan M. H. Farh. "Polymeric Insulator Conditions Estimation by Using Leakage Current Characteristics Based on Simulation and Experimental Investigation." Polymers 14, no. 4 (February 14, 2022): 737. http://dx.doi.org/10.3390/polym14040737.
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