Добірка наукової літератури з теми "Leakage Current Density"
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Статті в журналах з теми "Leakage Current Density"
Kawahara, Takamitsu, Naoki Hatta, Kuniaki Yagi, Hidetsugu Uchida, Motoki Kobayashi, Masayuki Abe, Hiroyuki Nagasawa, Bernd Zippelius, and Gerhard Pensl. "Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC." Materials Science Forum 645-648 (April 2010): 339–42. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.339.
Повний текст джерелаTamada, Minoru, Yuji Noguchi, and Masaru Miyayama. "Defects and Leakage Current in PbTiO3 Single Crystals." Key Engineering Materials 350 (October 2007): 77–80. http://dx.doi.org/10.4028/www.scientific.net/kem.350.77.
Повний текст джерелаKim, Hyung Chul, Moon Seob Han, Hyun June Park, Dong Uk Jang, Gyung Suk Kil, and Nirmal Kumar Nair. "Consideration of Uncertainty in Diagnosis for Railway Arrester." Key Engineering Materials 321-323 (October 2006): 1507–12. http://dx.doi.org/10.4028/www.scientific.net/kem.321-323.1507.
Повний текст джерелаIshikawa, Tsuyoshi, T. Katsuno, Y. Watanabe, H. Fujiwara, and T. Endo. "Critical Density of Nanoscale Pits for Suppressing Variability in Leakage Current of a SiC Schottky Barrier Diode." Materials Science Forum 717-720 (May 2012): 371–74. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.371.
Повний текст джерелаHirokazu, Fujiwara, T. Katsuno, Tsuyoshi Ishikawa, H. Naruoka, Masaki Konishi, T. Endo, Y. Watanabe, et al. "Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes." Materials Science Forum 717-720 (May 2012): 911–16. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.911.
Повний текст джерелаUno, Shigeyasu, Kazuaki Deguchi, Yoshinari Kamakura, and Kenji Taniguchi. "Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current." Japanese Journal of Applied Physics 41, Part 1, No. 4B (April 30, 2002): 2645–49. http://dx.doi.org/10.1143/jjap.41.2645.
Повний текст джерелаKim, Hyojung, Jongwoo Park, Junehwan Kim, Nara Lee, Gaeun Lee, Soonkon Kim, Pyungho Choi, Dohyun Beak, Jangkun Song, and Byoungdeog Choi. "Leakage Current Analysis Method for Metal Insulator Semiconductor Capacitors Through Low-Frequency Noise Measurement." Journal of Nanoscience and Nanotechnology 21, no. 3 (March 1, 2021): 1966–70. http://dx.doi.org/10.1166/jnn.2021.18901.
Повний текст джерелаNegara, I. Made Yulistya, I. G. N. Satriyadi Hernanda, Dimas Anton Asfani, Mira Kusuma Wardani, Bonifacius Kevin Yegar, and Reynaldi Syahril. "Effect of Seawater and Fly Ash Contaminants on Insulator Surfaces Made of Polymer Based on Finite Element Method." Energies 14, no. 24 (December 20, 2021): 8581. http://dx.doi.org/10.3390/en14248581.
Повний текст джерелаGeng, Kuiwei, Ditao Chen, Quanbin Zhou, and Hong Wang. "AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer." Electronics 7, no. 12 (December 10, 2018): 416. http://dx.doi.org/10.3390/electronics7120416.
Повний текст джерелаAlbertin, Katia F., M. A. Valle, and I. Pereyra. "Study Of MOS Capacitors With TiO2 And SiO2/TiO2 Gate Dielectric." Journal of Integrated Circuits and Systems 2, no. 2 (November 18, 2007): 89–93. http://dx.doi.org/10.29292/jics.v2i2.272.
Повний текст джерелаДисертації з теми "Leakage Current Density"
Kumar, Manish. "High density and high reliability thin film embedded capacitors on organic and silicon substrates." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/26655.
Повний текст джерелаCommittee Chair: Tummala Rao; Committee Member: Pulugurtha Raj; Committee Member: Wong C P. Part of the SMARTech Electronic Thesis and Dissertation Collection.
Tewg, Jun-Yen. "Zirconium-doped tantalum oxide high-k gate dielectric films." Diss., Texas A&M University, 2004. http://hdl.handle.net/1969.1/1346.
Повний текст джерелаHeideklang, René. "Data Fusion for Multi-Sensor Nondestructive Detection of Surface Cracks in Ferromagnetic Materials." Doctoral thesis, Humboldt-Universität zu Berlin, 2018. http://dx.doi.org/10.18452/19586.
Повний текст джерелаFatigue cracking is a dangerous and cost-intensive phenomenon that requires early detection. But at high test sensitivity, the abundance of false indications limits the reliability of conventional materials testing. This thesis exploits the diversity of physical principles that different nondestructive surface inspection methods offer, by applying data fusion techniques to increase the reliability of defect detection. The first main contribution are novel approaches for the fusion of NDT images. These surface scans are obtained from state-of-the-art inspection procedures in Eddy Current Testing, Thermal Testing and Magnetic Flux Leakage Testing. The implemented image fusion strategy demonstrates that simple algebraic fusion rules are sufficient for high performance, given adequate signal normalization. Data fusion reduces the rate of false positives is reduced by a factor of six over the best individual sensor at a 10 μm deep groove. Moreover, the utility of state-of-the-art image representations, like the Shearlet domain, are explored. However, the theoretical advantages of such directional transforms are not attained in practice with the given data. Nevertheless, the benefit of fusion over single-sensor inspection is confirmed a second time. Furthermore, this work proposes novel techniques for fusion at a high level of signal abstraction. A kernel-based approach is introduced to integrate spatially scattered detection hypotheses. This method explicitly deals with registration errors that are unavoidable in practice. Surface discontinuities as shallow as 30 μm are reliably found by fusion, whereas the best individual sensor requires depths of 40–50 μm for successful detection. The experiment is replicated on a similar second test specimen. Practical guidelines are given at the end of the thesis, and the need for a data sharing initiative is stressed to promote future research on this topic.
"High Power Density, High Efficiency Single Phase Transformer-less Photovoltaic String Inverters." Doctoral diss., 2017. http://hdl.handle.net/2286/R.I.45041.
Повний текст джерелаDissertation/Thesis
Doctoral Dissertation Electrical Engineering 2017
Thapliyal, Prashant. "High-K Dielectrics–Studies on (Ta2O5)1-x– (TiO2)x, (0 ≤ x ≤ 0.11), Thin Films." Thesis, 2021. https://etd.iisc.ac.in/handle/2005/5579.
Повний текст джерелаЧастини книг з теми "Leakage Current Density"
Monazzah, Amir Mahdi Hosseini, Amir M. Rahmani, Antonio Miele, and Nikil Dutt. "Exploiting Memory Resilience for Emerging Technologies: An Energy-Aware Resilience Exemplar for STT-RAM Memories." In Dependable Embedded Systems, 505–26. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-52017-5_21.
Повний текст джерелаMalavena, Gerardo. "Modeling of GIDL–Assisted Erase in 3–D NAND Flash Memory Arrays and Its Employment in NOR Flash–Based Spiking Neural Networks." In Special Topics in Information Technology, 43–53. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-85918-3_4.
Повний текст джерелаLi, Qiangqiang, Yanghui Zhang, Lili Shen, Ning Zhao, Tao Zhang, and Xiaoxia Sun. "The Effect of Leakage Current on the Performance of Proton-Conducting Solid Oxide Fuel Cells." In Advances in Energy Research and Development. IOS Press, 2022. http://dx.doi.org/10.3233/aerd220024.
Повний текст джерелаZhou, Yingjian, and Wei Chen. "Analysis and Optimization of Low-Voltage and High-Current Matrix Current-Doubler Rectifiers Integrated Magnetic Components." In Advances in Transdisciplinary Engineering. IOS Press, 2022. http://dx.doi.org/10.3233/atde221039.
Повний текст джерелаPreethi, Sapna R., and Mohammed Mujeer Ulla. "Low-Power Methodologies and Strategies in VLSI Circuits." In Advances in Computer and Electrical Engineering, 1–16. IGI Global, 2022. http://dx.doi.org/10.4018/978-1-6684-4974-5.ch001.
Повний текст джерелаStevic, Zoran, and Ilija Radovanovic. "Supercapacitors: The Innovation of Energy Storage." In Updates on Supercapacitors [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.106705.
Повний текст джерелаKumar, Sunil, and Balwinder Raj. "Simulations and Modeling of TFET for Low Power Design." In Advances in Systems Analysis, Software Engineering, and High Performance Computing, 640–67. IGI Global, 2016. http://dx.doi.org/10.4018/978-1-4666-8823-0.ch021.
Повний текст джерела"Chapter 9 Effect of current leakage on electro-adhesion forces in rolling friction and magnetic flux density distribution on track surfaces of rolling-element bearings." In Tribology in Electrical Environments, 179–209. Elsevier, 2006. http://dx.doi.org/10.1016/s0167-8922(06)80022-2.
Повний текст джерелаТези доповідей конференцій з теми "Leakage Current Density"
Uno, Shigeyasu, Kazuaki Deguchi, Yoshinari Kamakura, and Kenji Taniguchi. "Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current." In 2001 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2001. http://dx.doi.org/10.7567/ssdm.2001.c-9-1.
Повний текст джерелаOleinik, G. M., V. V. Aleksandrov, A. V. Branitskii, I. N. Frolov, E. V. Grabovskii, E. I. Predkova, O. B. Reshetnjak, and S. I. Tkachenko. "Leakage of current from MITL with ceramic coating cathode." In 8th International Congress on Energy Fluxes and Radiation Effects. Crossref, 2022. http://dx.doi.org/10.56761/efre2022.s2-o-009807.
Повний текст джерелаHeydari, H., S. H. Pedramrazi, and F. Faghihi. "The effects of windings current density values on leakage reactance in a 25 kA current injection transformer." In 2005 International Power Engineering Conference. IEEE, 2005. http://dx.doi.org/10.1109/ipec.2005.206988.
Повний текст джерелаAkashe, Shyam, Sushil Bhushan, and Sanjay Sharma. "High density and low leakage current based 5T SRAM cell using 45 nm technology." In International Conference on Nanoscience, Engineering and Technology (ICONSET 2011). IEEE, 2011. http://dx.doi.org/10.1109/iconset.2011.6167978.
Повний текст джерелаSchmidt, Christian, Cheryl Hartfield, Stephen T. Kelly, Luke England, and Sukeshwar Kannan. "Nanoscale 3D X-ray Microscopy for High Density Multi-Chip Packaging FA." In ISTFA 2018. ASM International, 2018. http://dx.doi.org/10.31399/asm.cp.istfa2018p0424.
Повний текст джерелаMatsuda, K., S. Tada, M. Nagata, Y. Li, T. Sugawara, M. Iwamoto, K. Ohta, K. Sakiyama, and N. Miura. "An Information Leakage Sensor Based on Measurement of Laser-Induced Opto-Electric Bulk Current Density." In 2019 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2019. http://dx.doi.org/10.7567/ssdm.2019.m-1-03.
Повний текст джерелаTian, Lixin, Fei Yang, Zhanwei Shen, Feng Zhang, Xingfang Liu, Guoguo Yan, Wanshun Zhao, et al. "Low leakage current and high unipolar current density in a 4H-SiC trench gate MOSFET with integrated Schottky barrier diode." In 2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS). IEEE, 2020. http://dx.doi.org/10.1109/sslchinaifws51786.2020.9308886.
Повний текст джерелаSerincan, Mustafa F., Ugur Pasaogullari, and Nigel M. Sammes. "A Computational Analysis to Identify the Current Density Characteristics of a Micro-Tubular Solid Oxide Fuel Cell." In ASME 2008 6th International Conference on Fuel Cell Science, Engineering and Technology. ASMEDC, 2008. http://dx.doi.org/10.1115/fuelcell2008-65199.
Повний текст джерелаGao, Kai, Maoxin Ren, Haifeng Jin, Haoyang Tian, Jianming He, and Lijun Jin. "Pollution Flashover Prediction of Insulators Based on Combined Probability Density of Infrared Image Temperature and Leakage Current." In 2022 IEEE 5th International Electrical and Energy Conference (CIEEC). IEEE, 2022. http://dx.doi.org/10.1109/cieec54735.2022.9846194.
Повний текст джерелаBanik, Apu, Sovan Dalai, and Biswendu Chatterjee. "Studies the effect of Equivalent Salt Deposit Density on leakage current and flashover voltage of artificially contaminated disc insulators." In 2015 1st Conference on Power, Dielectric and Energy Management at NERIST (ICPDEN). IEEE, 2015. http://dx.doi.org/10.1109/icpden.2015.7084495.
Повний текст джерела