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Автор: Grafiati

Опубліковано: 6 вересня 2023

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1

Musfeldt, Janice L., Yoshihiro Iwasa, and Reshef Tenne. "Nanotubes from layered transition metal dichalcogenides." Physics Today 73, no. 8 (August 1, 2020): 42–48. http://dx.doi.org/10.1063/pt.3.4547.

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2

Guguchia, Zurab. "Unconventional Magnetism in Layered Transition Metal Dichalcogenides." Condensed Matter 5, no. 2 (June 20, 2020): 42. http://dx.doi.org/10.3390/condmat5020042.

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Анотація:

In this contribution to the MDPI Condensed Matter issue in Honor of Nobel Laureate Professor K.A. Müller I review recent experimental progress on magnetism of semiconducting transition metal dichalcogenides (TMDs) from the local-magnetic probe point of view such as muon-spin rotation and discuss prospects for the creation of unique new device concepts with these materials. TMDs are the prominent class of layered materials, that exhibit a vast range of interesting properties including unconventional semiconducting, optical, and transport behavior originating from valley splitting. Until recently, this family has been missing one crucial member: magnetic semiconductor. The situation has changed over the past few years with the discovery of layered semiconducting magnetic crystals, for example CrI 3 and VI 2 . We have also very recently discovered unconventional magnetism in semiconducting Mo-based TMD systems 2H-MoTe 2 and 2H-MoSe 2 [Guguchia et. al., Science Advances 2018, 4(12)]. Moreover, we also show the evidence for the involvement of magnetism in semiconducting tungsten diselenide 2H-WSe 2 . These results open a path to studying the interplay of 2D physics, semiconducting properties and magnetism in TMDs. It also opens up a host of new opportunities to obtain tunable magnetic semiconductors, forming the basis for spintronics.

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3

Chia, Xinyi, Alex Yong Sheng Eng, Adriano Ambrosi, Shu Min Tan, and Martin Pumera. "Electrochemistry of Nanostructured Layered Transition-Metal Dichalcogenides." Chemical Reviews 115, no. 21 (October 2015): 11941–66. http://dx.doi.org/10.1021/acs.chemrev.5b00287.

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4

Lim, Chee Shan, Shu Min Tan, Zdeněk Sofer, and Martin Pumera. "Impact Electrochemistry of Layered Transition Metal Dichalcogenides." ACS Nano 9, no. 8 (August 4, 2015): 8474–83. http://dx.doi.org/10.1021/acsnano.5b03357.

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5

Jawaid, Ali, Justin Che, Lawrence F. Drummy, John Bultman, Adam Waite, Ming-Siao Hsiao, and Richard A. Vaia. "Redox Exfoliation of Layered Transition Metal Dichalcogenides." ACS Nano 11, no. 1 (January 4, 2017): 635–46. http://dx.doi.org/10.1021/acsnano.6b06922.

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6

Su, Guohui, Xing Wu, Wenqi Tong, and Chungang Duan. "Two-Dimensional Layered Materials-Based Spintronics." SPIN 05, no. 04 (December 2015): 1540011. http://dx.doi.org/10.1142/s2010324715400111.

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Анотація:

The recent emergence of two-dimensional (2D) layered materials — graphene and transition metal dichalcogenides — opens a new avenue for exploring the internal quantum degrees of freedom of electrons and their potential for new electronics. Here, we provide a brief review of experimental achievements concerning electrical spin injection, spin transport, graphene nanoribbons spintronics and transition metal dichalcogenides spin and pseudospins. Future research in 2D layered materials spintronics will need to address the development of applications such as spin transistors and spin logic devices, as well as exotic physical properties including pseudospins-valley phenomena in graphene and other 2D materials.

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7

Chia, Xinyi, and Martin Pumera. "Layered transition metal dichalcogenide electrochemistry: journey across the periodic table." Chemical Society Reviews 47, no. 15 (2018): 5602–13. http://dx.doi.org/10.1039/c7cs00846e.

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8

Wang, Shanshan, Alex Robertson, and Jamie H. Warner. "Atomic structure of defects and dopants in 2D layered transition metal dichalcogenides." Chemical Society Reviews 47, no. 17 (2018): 6764–94. http://dx.doi.org/10.1039/c8cs00236c.

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9

Huang, Yanmin, Zhuo Ma, Yunxia Hu, Dongfeng Chai, Yunfeng Qiu, Guanggang Gao, and PingAn Hu. "An efficient WSe2/Co0.85Se/graphene hybrid catalyst for electrochemical hydrogen evolution reaction." RSC Advances 6, no. 57 (2016): 51725–31. http://dx.doi.org/10.1039/c6ra08618g.

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Transition metal doped layered transition metal dichalcogenides (TMDs) are regarded as promising hydrogen evolution reaction (HER) candidates due to exposed active sites at both edges and basal planes.

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10

Wang, Wenhui, Zhongti Sun, Wenshuai Zhang, Quanping Fan, Qi Sun, Xudong Cui, and Bin Xiang. "First-principles investigations of vanadium disulfide for lithium and sodium ion battery applications." RSC Advances 6, no. 60 (2016): 54874–79. http://dx.doi.org/10.1039/c6ra07586j.

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11

da Silva-Neto, Manoel L., Renato Barbosa-Silva, Cid B. de Araújo, Christiano J. S. de Matos, Ali M. Jawaid, Allyson J. Ritter, Richard A. Vaia, and Anderson S. L. Gomes. "Hyper–Rayleigh scattering in 2D redox exfoliated semi-metallic ZrTe2 transition metal dichalcogenide." Physical Chemistry Chemical Physics 22, no. 47 (2020): 27845–49. http://dx.doi.org/10.1039/d0cp04821f.

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12

Cao, Wei, Oded Hod, and Michael Urbakh. "Interlayer Registry Index of Layered Transition Metal Dichalcogenides." Journal of Physical Chemistry Letters 13, no. 15 (April 8, 2022): 3353–59. http://dx.doi.org/10.1021/acs.jpclett.1c04202.

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13

Vodeb, Jaka, Viktor V. Kabanov, Yaroslav A. Gerasimenko, Rok Venturini, Jan Ravnik, Marion A. van Midden, Erik Zupanic, Petra Sutar, and Dragan Mihailovic. "Configurational electronic states in layered transition metal dichalcogenides." New Journal of Physics 21, no. 8 (August 2, 2019): 083001. http://dx.doi.org/10.1088/1367-2630/ab3057.

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14

Xu, Xiaodong, Wang Yao, Di Xiao, and Tony F. Heinz. "Spin and pseudospins in layered transition metal dichalcogenides." Nature Physics 10, no. 5 (April 30, 2014): 343–50. http://dx.doi.org/10.1038/nphys2942.

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15

Shimada, Toshihiro, Fumio S. Ohuchi, and Bruce A. Parkinson. "Work Function and Photothreshold of Layered Metal Dichalcogenides." Japanese Journal of Applied Physics 33, Part 1, No. 5A (May 15, 1994): 2696–98. http://dx.doi.org/10.1143/jjap.33.2696.

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16

Könenkamp, R. "Electrically driven metal-insulator transition in layered transition-metal dichalcogenides." Physical Review B 38, no. 5 (August 15, 1988): 3056–59. http://dx.doi.org/10.1103/physrevb.38.3056.

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17

Shao, Gonglei, Yanyan Xu, and Song Liu. "Controllable preparation of 2D metal-semiconductor layered metal dichalcogenides heterostructures." Science China Chemistry 62, no. 3 (December 26, 2018): 295–98. http://dx.doi.org/10.1007/s11426-018-9407-9.

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18

Zhang, Man, Yuan He, Dong Yan, Hong Xu, Anqi Wang, Zuo Chen, Shu Wang, Huixia Luo, and Kai Yan. "Multifunctional 2H-TaS2 nanoflakes for efficient supercapacitors and electrocatalytic evolution of hydrogen and oxygen." Nanoscale 11, no. 46 (2019): 22255–60. http://dx.doi.org/10.1039/c9nr07564j.

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19

Guo, Yan, Nishtha Manish Singh, Chandreyee Manas Das, Qingling Ouyang, Lixing Kang, Kuanbiao Li, Philippe Coquet, and Ken-Tye Yong. "Plasmonic-based sensitivity enhancement of a Goos–Hänchen shift biosensor using transition metal dichalcogenides: a theoretical insight." New Journal of Chemistry 44, no. 37 (2020): 16144–51. http://dx.doi.org/10.1039/d0nj01890b.

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20

Chia, Xinyi, Adriano Ambrosi, Petr Lazar, Zdeněk Sofer, and Martin Pumera. "Electrocatalysis of layered Group 5 metallic transition metal dichalcogenides (MX2, M = V, Nb, and Ta; X = S, Se, and Te)." Journal of Materials Chemistry A 4, no. 37 (2016): 14241–53. http://dx.doi.org/10.1039/c6ta05110c.

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21

Jana, Manoj K., and C. N. R. Rao. "Two-dimensional inorganic analogues of graphene: transition metal dichalcogenides." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 374, no. 2076 (September 13, 2016): 20150318. http://dx.doi.org/10.1098/rsta.2015.0318.

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Анотація:

The discovery of graphene marks a major event in the physics and chemistry of materials. The amazing properties of this two-dimensional (2D) material have prompted research on other 2D layered materials, of which layered transition metal dichalcogenides (TMDCs) are important members. Single-layer and few-layer TMDCs have been synthesized and characterized. They possess a wide range of properties many of which have not been known hitherto. A typical example of such materials is MoS 2 . In this article, we briefly present various aspects of layered analogues of graphene as exemplified by TMDCs. The discussion includes not only synthesis and characterization, but also various properties and phenomena exhibited by the TMDCs. This article is part of the themed issue ‘Fullerenes: past, present and future, celebrating the 30th anniversary of Buckminster Fullerene’.

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22

Wang, Caiyun, Fuchao Yang, and Yihua Gao. "The highly-efficient light-emitting diodes based on transition metal dichalcogenides: from architecture to performance." Nanoscale Advances 2, no. 10 (2020): 4323–40. http://dx.doi.org/10.1039/d0na00501k.

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23

Zeng, Hualing, and Xiaodong Cui. "An optical spectroscopic study on two-dimensional group-VI transition metal dichalcogenides." Chemical Society Reviews 44, no. 9 (2015): 2629–42. http://dx.doi.org/10.1039/c4cs00265b.

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24

Stylianakis, Minas M. "Optoelectronic Nanodevices." Nanomaterials 10, no. 3 (March 13, 2020): 520. http://dx.doi.org/10.3390/nano10030520.

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Анотація:

Over the last decade, novel materials such as graphene derivatives, transition metal dichalcogenides (TMDs), other two-dimensional (2D) layered materials, perovskites, as well as metal oxides and other metal nanostructures have centralized the interest of the scientific community [...]

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25

He, Shijie, Hua Lin, Lizhao Qin, Zhou Mao, Hong He, Yuan Li, and Qing Li. "Synthesis, stability, and intrinsic photocatalytic properties of vanadium diselenide." Journal of Materials Chemistry A 5, no. 5 (2017): 2163–71. http://dx.doi.org/10.1039/c6ta10390a.

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26

Zhao, Chao, Tien Khee Ng, Chien-Chih Tseng, Jun Li, Yumeng Shi, Nini Wei, Daliang Zhang, et al. "InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters." RSC Advances 7, no. 43 (2017): 26665–72. http://dx.doi.org/10.1039/c7ra03590j.

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27

Lee, Yoon Yun, Gwi Ok Park, Yun Seok Choi, Jeong Kuk Shon, Jeongbae Yoon, Kyoung Ho Kim, Won-Sub Yoon, Hansu Kim, and Ji Man Kim. "Mesoporous transition metal dichalcogenide ME2 (M = Mo, W; E = S, Se) with 2-D layered crystallinity as anode materials for lithium ion batteries." RSC Advances 6, no. 17 (2016): 14253–60. http://dx.doi.org/10.1039/c5ra19799f.

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Mesoporous transition metal dichalcogenides with 2D layered crystallinity, synthesized through a melting-infiltration assisted nano-replication, exhibit excellent electrochemical performances for lithium-storage.

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28

Kumar, Ashish, Sanjay Kumar Swami, Rohit Sharma, Sandeep Yadav, V. N. Singh, Joerg J. Schneider, O. P. Sinha, and Ritu Srivastava. "A study on structural, optical, and electrical characteristics of perovskite CsPbBr₃ QD/2D-TiSe₂ nanosheet based nanocomposites for optoelectronic applications." Dalton Transactions 51, no. 10 (2022): 4104–12. http://dx.doi.org/10.1039/d1dt03423e.

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29

Pumera, Martin, Zdeněk Sofer, and Adriano Ambrosi. "Layered transition metal dichalcogenides for electrochemical energy generation and storage." J. Mater. Chem. A 2, no. 24 (2014): 8981–87. http://dx.doi.org/10.1039/c4ta00652f.

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Анотація:

Layered transition metal dichalcogenides (TMDs) (MoS₂, MoSe₂, WS₂, WSe₂, etc.) are a chemically diverse class of compounds having remarkable electrochemical properties.

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30

Aftab, Sikandar, Ms Samiya, Wugang Liao, Muhammad Waqas Iqbal, Mavra Ishfaq, Karna Ramachandraiah, Hafiz Muhammad Salman Ajmal, et al. "Switching photodiodes based on (2D/3D) PdSe2/Si heterojunctions with a broadband spectral response." Journal of Materials Chemistry C 9, no. 11 (2021): 3998–4007. http://dx.doi.org/10.1039/d0tc05894g.

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Noble metal dichalcogenides (NMDs) are two-dimensional (2D) layered materials that exhibit outstanding thickness-dependent tunable-bandgaps that can be suitable for various optoelectronic applications.

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31

STARNBERG, H. I. "RECENT DEVELOPMENTS IN ALKALI METAL INTERCALATION OF LAYERED TRANSITION METAL DICHALCOGENIDES." Modern Physics Letters B 14, no. 13 (June 10, 2000): 455–71. http://dx.doi.org/10.1142/s0217984900000628.

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Анотація:

The modification of layered transition metal dichalcogenides through intercalation is reviewed, with special emphasis on in situ intercalation with alkali metals. Experimental results obtained using photoelectron spectroscopy, low-energy electron diffraction, scanning tunneling microscopy and transmission electron microscopy are presented, and conclusions about the in situ intercalation process and the associated crystallographic and electronic structure changes are presented. It is stressed that various kinds of defects and disorders must be taken into account for a full understanding.

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32

González, Viviana Jehová, Antonio M. Rodríguez, Ismael Payo, and Ester Vázquez. "Mechanochemical preparation of piezoelectric nanomaterials: BN, MoS2 and WS2 2D materials and their glycine-cocrystals." Nanoscale Horizons 5, no. 2 (2020): 331–35. http://dx.doi.org/10.1039/c9nh00494g.

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33

Peng, Mingfa, Yi Tao, Xuekun Hong, Yushen Liu, Zhen Wen, and Xuhui Sun. "One-step synthesized PbSe nanocrystal inks decorated 2D MoS₂ heterostructure for high stability photodetectors with photoresponse extending to near-infrared region." Journal of Materials Chemistry C 10, no. 6 (2022): 2236–44. http://dx.doi.org/10.1039/d1tc05837a.

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Анотація:

Two-dimensional layered transition metal dichalcogenides (TMDs) have been widely employed as functional materials in promising electronics and optoelectronic devices due to their unique physical and outstanding electronic properties.

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34

Chen, Hongxiang, Sheng Li, Shuxian Huang, LiAn Ma, Sheng Liu, Fang Tang, Yong Fang, and Pinqiang Dai. "High-entropy structure design in layered transition metal dichalcogenides." Acta Materialia 222 (January 2022): 117438. http://dx.doi.org/10.1016/j.actamat.2021.117438.

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35

Galun, E., H. Cohen, L. Margulis, A. Vilan, T. Tsirlina, G. Hodes, R. Tenne, M. Hershfinkel, W. Jaegermann, and K. Ellmer. "Crystallization of layered metal‐dichalcogenides films on amorphous substrates." Applied Physics Letters 67, no. 23 (December 4, 1995): 3474–76. http://dx.doi.org/10.1063/1.115251.

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36

Choudhury, Tanushree H., Xiaotian Zhang, Zakaria Y. Al Balushi, Mikhail Chubarov, and Joan M. Redwing. "Epitaxial Growth of Two-Dimensional Layered Transition Metal Dichalcogenides." Annual Review of Materials Research 50, no. 1 (July 1, 2020): 155–77. http://dx.doi.org/10.1146/annurev-matsci-090519-113456.

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Анотація:

Transition metal dichalcogenide (TMD) monolayers and heterostructures have emerged as a compelling class of materials with transformative properties that may be harnessed for novel device technologies. These materials are commonly fabricated by exfoliation of flakes from bulk crystals, but wafer-scale epitaxy of single-crystal films is required to advance the field. This article reviews the fundamental aspects of epitaxial growth of van der Waals–bonded crystals specific to TMD films. The structural and electronic properties of TMD crystals are initially described along with sources and methods used for vapor phase deposition. Issues specific to TMD epitaxy are critically reviewed, including substrate properties and film-substrate orientation and bonding. The current status of TMD epitaxy on different substrate types is discussed along with characterization techniques for large-areaepitaxial films. Future directions are proposed, including developments in substrates, in situ and full-wafer characterization techniques, and heterostructure growth.

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37

Jawaid, Ali M., Allyson J. Ritter, and Richard A. Vaia. "Mechanism for Redox Exfoliation of Layered Transition Metal Dichalcogenides." Chemistry of Materials 32, no. 15 (July 13, 2020): 6550–65. http://dx.doi.org/10.1021/acs.chemmater.0c01937.

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38

Chia, Xinyi, Zdeněk Sofer, Jan Luxa, and Martin Pumera. "Layered Noble Metal Dichalcogenides: Tailoring Electrochemical and Catalytic Properties." ACS Applied Materials & Interfaces 9, no. 30 (July 19, 2017): 25587–99. http://dx.doi.org/10.1021/acsami.7b05083.

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39

Stewart, G. R. "Low Temperature Specific Heat of Layered Transition Metal Dichalcogenides." Journal of Superconductivity and Novel Magnetism 33, no. 1 (October 16, 2019): 213–15. http://dx.doi.org/10.1007/s10948-019-05278-3.

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40

Skurlov I. D., Parfenov P. S., Sokolova A. V., Tatarinov D. A., Babaev A. A., Baranov M. A., and Litvin A. P. "Photoinduced charge transfer in layered 2D PbSe-MoS-=SUB=-2-=/SUB=- nanostructures." Optics and Spectroscopy 132, no. 2 (2022): 298. http://dx.doi.org/10.21883/eos.2022.02.53226.2773-21.

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Анотація:

Semiconductor 2D nanostructures are a new platform for the creation of modern optoelectronic devices. Layered 2D PbSe-MoS2 nanostructures with efficient photoinduced charge transfer from PbSe nanoplatelets (NPLs) to MoS2 were created. When PbSe NPLs with short organic ligands are deposited onto a thin layer of MoS2 NPLs, a decrease in their photoluminescence intensity and a decrease in the average photoluminescence lifetime are observed. When a layered 2D PbSe-MoS2 nanostructure is illuminated with IR radiation, a photocurrent appears, which indicates the contribution of PbSe NPLs to the electrical response of the system. Ultrathin layers of transition metal dichalcogenides sensitized with nanostructures based on lead chalcogenides can be used in photodetectors with a spectral sensitivity region extended to the near-IR range. Keywords: nanoplatelets, transition metal dichalcogenides, charge transfer, near infrared region.

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41

Ullah, Nabi, Dariusz Guziejewski, Aihua Yuan, and Sayyar Ali Shah. "Recent Advancement and Structural Engineering in Transition Metal Dichalcogenides for Alkali Metal Ions Batteries." Materials 16, no. 7 (March 23, 2023): 2559. http://dx.doi.org/10.3390/ma16072559.

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Анотація:

Currently, transition metal dichalcogenides-based alkaline metal ion batteries have been extensively investigated for renewable energy applications to overcome the energy crisis and environmental pollution. The layered morphologys with a large surface area favors high electrochemical properties. Thermal stability, mechanical structural stability, and high conductivity are the primary features of layered transition metal dichalcogenides (L-TMDs). L-TMDs are used as battery materials and as supporters for other active materials. However, these materials still face aggregation, which reduces their applicability in batteries. In this review, a comprehensive study has been undertaken on recent advancements in L-TMDs-based materials, including 0D, 1D, 2D, 3D, and other carbon materials. Types of structural engineering, such as interlayer spacing, surface defects, phase control, heteroatom doping, and alloying, have been summarized. The synthetic strategy of structural engineering and its effects have been deeply discussed. Lithium- and sodium-ion battery applications have been summarized in this study. This is the first review article to summarize different morphology-based TMDs with their intrinsic properties for alkali metal ion batteries (AMIBs), so it is believed that this review article will improve overall knowledge of TMDs for AMIBS applications.

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42

Shi, Yuyang, Haipeng Song, Nan Li, Xiang Wu, Kai Wang, Ye Wu, Gonglan Ye, and Haijun Huang. "High-pressure structural stability and bandgap engineering of layered tin disulfide." Applied Physics Letters 121, no. 11 (September 12, 2022): 114101. http://dx.doi.org/10.1063/5.0107303.

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Two-dimensional layered metal dichalcogenides have attracted extensive attention because of their diverse physical properties and potential applications in electronics and optoelectronics. As an eco-friendly and earth abundant semiconductor, SnS2 displays limited optoelectronic applications due to its large and indirect bandgap. Pressure is a powerful tool to tune crystal structures and physical properties of materials. Here, we systematically investigate the structural stability and optical properties of 4H-SnS2 under high pressure. The crystal structure of 4H-SnS2 is stable up to 56 GPa without structural transition and layer sliding. Continuous lattice contraction is accompanied by gradual bandgap narrowing, which is reversible after releasing pressure. The continuous and reversible modulation of the crystal structure and bandgap on 4H-SnS2 suggest promising optoelectronic applications in the range of visible light based on two-dimensional layered metal dichalcogenides.

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43

Liu, De-Sheng, Jiang Wu, Yanan Wang, Haining Ji, Lei Gao, Xin Tong, Muhammad Usman, Peng Yu, and Zhiming Wang. "Tailored performance of layered transition metal dichalcogenides via integration with low dimensional nanostructures." RSC Advances 7, no. 20 (2017): 11987–97. http://dx.doi.org/10.1039/c7ra01363a.

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44

Kuc, Agnieszka, and Thomas Heine. "The electronic structure calculations of two-dimensional transition-metal dichalcogenides in the presence of external electric and magnetic fields." Chemical Society Reviews 44, no. 9 (2015): 2603–14. http://dx.doi.org/10.1039/c4cs00276h.

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Transition-metal dichalcogenides TX₂ (T = W, Mo; X = S, Se, Te) are layered materials that are available in ultrathin forms such as mono-, bi- and multilayers, which are commonly known as two-dimensional materials.

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Cho, Suyeon, Sera Kim, Jinbong Seok, and Heejun Yang. "Applications of metal-semiconductor phase transition in 2D layered transition metal dichalcogenides." Vacuum Magazine 3, no. 1 (March 30, 2016): 4–8. http://dx.doi.org/10.5757/vacmac.3.1.4.

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Tedstone, Aleksander A., David J. Lewis, and Paul O’Brien. "Synthesis, Properties, and Applications of Transition Metal-Doped Layered Transition Metal Dichalcogenides." Chemistry of Materials 28, no. 7 (March 16, 2016): 1965–74. http://dx.doi.org/10.1021/acs.chemmater.6b00430.

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Hovden, Robert, Adam W. Tsen, Pengzi Liu, Benjamin H. Savitzky, Ismail El Baggari, Yu Liu, Wenjian Lu, et al. "Atomic lattice disorder in charge-density-wave phases of exfoliated dichalcogenides (1T-TaS2)." Proceedings of the National Academy of Sciences 113, no. 41 (September 28, 2016): 11420–24. http://dx.doi.org/10.1073/pnas.1606044113.

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Charge-density waves (CDWs) and their concomitant periodic lattice distortions (PLDs) govern the electronic properties in several layered transition-metal dichalcogenides. In particular, 1T-TaS2 undergoes a metal-to-insulator phase transition as the PLD becomes commensurate with the crystal lattice. Here we directly image PLDs of the nearly commensurate (NC) and commensurate (C) phases in thin, exfoliated 1T-TaS2 using atomic resolution scanning transmission electron microscopy at room and cryogenic temperature. At low temperatures, we observe commensurate PLD superstructures, suggesting ordering of the CDWs both in- and out-of-plane. In addition, we discover stacking transitions in the atomic lattice that occur via one-bond-length shifts. Interestingly, the NC PLDs exist inside both the stacking domains and their boundaries. Transitions in stacking order are expected to create fractional shifts in the CDW between layers and may be another route to manipulate electronic phases in layered dichalcogenides.

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Varadwaj, Pradeep R., Arpita Varadwaj, Helder M. Marques, and Koichi Yamashita. "Chalcogen Bonding in the Molecular Dimers of WCh2 (Ch = S, Se, Te): On the Basic Understanding of the Local Interfacial and Interlayer Bonding Environment in 2D Layered Tungsten Dichalcogenides." International Journal of Molecular Sciences 23, no. 3 (January 23, 2022): 1263. http://dx.doi.org/10.3390/ijms23031263.

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Layered two-dimensional transition metal dichalcogenides and their heterostructures are of current interest, owing to the diversity of their applications in many areas of materials nanoscience and technologies. With this in mind, we have examined the three molecular dimers of the tungsten dichalcogenide series, (WCh2)2 (Ch = S, Se, Te), using density functional theory to provide insight into which interactions, and their specific characteristics, are responsible for the interfacial/interlayer region in the room temperature 2H phase of WCh2 crystals. Our calculations at various levels of theory suggested that the Te···Te chalcogen bonding in (WTe2)2 is weak, whereas the Se···Se and S···S bonding interactions in (WSe2)2 and (WS2)2, respectively, are of the van der Waals type. The presence and character of Ch···Ch chalcogen bonding interactions in the dimers of (WCh2)2 are examined with a number of theoretical approaches and discussed, including charge-density-based approaches, such as the quantum theory of atoms in molecules, interaction region indicator, independent gradient model, and reduced density gradient non-covalent index approaches. The charge-density-based topological features are shown to be concordant with the results that originate from the extrema of potential on the electrostatic surfaces of WCh2 monomers. A natural bond orbital analysis has enabled us to suggest a number of weak hyperconjugative charge transfer interactions between the interacting monomers that are responsible for the geometry of the (WCh2)2 dimers at equilibrium. In addition to other features, we demonstrate that there is no so-called van der Waals gap between the monolayers in two-dimensional layered transition metal tungsten dichalcogenides, which are gapless, and that the (WCh2)2 dimers may be prototypes for a basic understanding of the physical chemistry of the chemical bonding environments associated with the local interfacial/interlayer regions in layered 2H-WCh2 nanoscale systems.

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Li, Henan, Yumeng Shi, Ming-Hui Chiu, and Lain-Jong Li. "Emerging energy applications of two-dimensional layered transition metal dichalcogenides." Nano Energy 18 (November 2015): 293–305. http://dx.doi.org/10.1016/j.nanoen.2015.10.023.

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Yu, Xiaoyun, and Kevin Sivula. "Layered 2D semiconducting transition metal dichalcogenides for solar energy conversion." Current Opinion in Electrochemistry 2, no. 1 (April 2017): 97–103. http://dx.doi.org/10.1016/j.coelec.2017.03.007.

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