Увійти

Готові списки джерел за темами / Lateral heterostructures / Статті в журналах

Щоб переглянути інші типи публікацій з цієї теми, перейдіть за посиланням: Lateral heterostructures.

Статті в журналах з теми "Lateral heterostructures"

Автор: Grafiati

Опубліковано: 11 січня 2025

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Ознайомтеся з топ-50 статей у журналах для дослідження на тему "Lateral heterostructures".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Переглядайте статті в журналах для різних дисциплін та оформлюйте правильно вашу бібліографію.

1

Guha, Puspendu, Joon Young Park, Janghyun Jo, Yunyeong Chang, Hyeonhu Bae, Rajendra Kumar Saroj, Hoonkyung Lee, Miyoung Kim, and Gyu-Chul Yi. "Molecular beam epitaxial growth of Sb₂Te₃–Bi₂Te₃ lateral heterostructures." 2D Materials 9, no. 2 (January 31, 2022): 025006. http://dx.doi.org/10.1088/2053-1583/ac421a.

Повний текст джерела

Анотація:

Abstract We report on heteroepitaxial growth of Sb2Te3–Bi2Te3 lateral heterostructures using molecular beam epitaxy. The lateral heterostructures were fabricated by growing Bi2Te3 islands of hexagonal or triangular nanostructures with a typical size of several 100 nm and thickness of ∼15 nm on graphene substrates and Sb2Te3 laterally on the side facets of the nanostructures. Multiple-step processes with different growth temperatures were employed to grow the lateral heterostructures. Electron microscopy techniques indicate that the inner region is Bi2Te3 and the outer Sb2Te3 was formed laterally on the graphene in an epitaxial manner. The interface between Bi2Te3 and Sb2Te3 from planar and cross-sectional views was studied by the aberration-corrected (C s-corrected) high-angle annular dark-field scanning transmission electron microscope technique. The cross-sectional electron microscopy investigation shows no wetting layer of Sb2Te3 on Bi2Te3, corroborating perfect lateral heterostructure formation. In addition, we investigated the topological properties of Sb2Te3–Bi2Te3 lateral heterostructures using first-principles calculations.

Стилі APA, Harvard, Vancouver, ISO та ін.

2

Zhang, Jianzhi, Hongfu Huang, Junhao Peng, Chuyu Li, Huafeng Dong, Sifan Kong, Yiyuan Xie, Runqian Wu, Minru Wen, and Fugen Wu. "A Cost-Effective Long-Wave Infrared Detector Material Based on Graphene@PtSe2/HfSe2 Bidirectional Heterostructure: A First-Principles Study." Crystals 12, no. 9 (September 2, 2022): 1244. http://dx.doi.org/10.3390/cryst12091244.

Повний текст джерела

Анотація:

The Graphene@PtSe2 heterostructure is an excellent long-wave infrared detection material. However, the expensive cost of PtSe2 prevents its widespread use in infrared detection. In this paper, Hf was used to partially replace Pt to form Graphene@(PtSe2)n(HfSe2)4−n (n = 1, 2, and 3) bidirectional heterostructures consisting of graphene and lateral PtSe2/HfSe2 composites based on first-principles calculations. Then, the new bidirectional heterostructures were compared with heterostructures formed by graphene with pure MSe2 (M = Pt, Hf). It was found that the band gaps of the bidirectional heterostructures were between those of Graphene@PtSe2 and Graphene@HfSe2. Among these heterostructures, the Graphene@(PtSe2)3(HfSe2)1 bidirectional heterostructure has almost the same optical absorption properties in the infrared wavelength region of 1.33~40 µm as the Graphene@PtSe2 heterostructure, and it improves the absorption in the near-infrared wavelength region of 0.75~1.33 µm. Such a designment may bring the material costs down (since PtSe2 costs approximately five times more than HfSe2). This study on the designment of the bidirectional Graphene@(PtSe2)3(HfSe2)1 heterostructure also illustrates a cost-effective design method for Pt-based IR detectors.

Стилі APA, Harvard, Vancouver, ISO та ін.

3

Wan, Li-Kai, Yi-Xuan Xue, Jin-Wu Jiang, and Harold S. Park. "Machine learning accelerated search of the strongest graphene/h-BN interface with designed fracture properties." Journal of Applied Physics 133, no. 2 (January 14, 2023): 024302. http://dx.doi.org/10.1063/5.0131576.

Повний текст джерела

Анотація:

Two-dimensional lateral heterostructures exhibit novel electronic and optical properties that are induced by their in-plane interface for which the mechanical properties of the interface are important for the stability of the lateral heterostructure. Therefore, we performed molecular dynamics simulations and developed a convolutional neural network-based machine learning model to study the fracture properties of the interface in a graphene/hexagonal boron nitride lateral heterostructure. The molecular dynamics (MD) simulations show that the shape of the interface can cause an 80% difference in the fracture stress and the fracture strain for the interface. By using 11 500 training samples obtained with help of high-cost MD simulation, the machine learning model is able to search out the strongest interfaces with the largest fracture strain and fracture stress in a large sample space with over 150 000 structures. By analyzing the atomic configuration of these strongest interfaces, we disclose two major factors dominating the interface strength, including the interface roughness and the strength of the chemical bond across the interface. We also explore the correlation between the fracture properties and the thermal conductivity for these lateral heterostructures by examining the bond type and the shape of the graphene/hexagonal boron nitride interface. We find that interfaces comprised of stronger bonds and smoother zigzag interfaces can relieve the abrupt change of the acoustic velocity, leading to the enhancement of the interface thermal conductivity. These findings will be valuable for the application of the two-dimensional lateral heterostructure in electronic devices.

Стилі APA, Harvard, Vancouver, ISO та ін.

4

Liu, Xiaolong, and Mark C. Hersam. "Borophene-graphene heterostructures." Science Advances 5, no. 10 (October 2019): eaax6444. http://dx.doi.org/10.1126/sciadv.aax6444.

Повний текст джерела

Анотація:

Integration of dissimilar two-dimensional (2D) materials is essential for nanoelectronic applications. Compared to vertical stacking, covalent lateral stitching requires bottom-up synthesis, resulting in rare realizations of 2D lateral heterostructures. Because of its polymorphism and diverse bonding geometries, borophene is a promising candidate for 2D heterostructures, although suitable synthesis conditions have not yet been demonstrated. Here, we report lateral and vertical integration of borophene with graphene. Topographic and spatially resolved spectroscopic measurements reveal nearly atomically sharp lateral interfaces despite imperfect crystallographic lattice and symmetry matching. In addition, boron intercalation under graphene results in rotationally commensurate vertical heterostructures. The rich bonding configurations of boron suggest that borophene can be integrated into a diverse range of 2D heterostructures.

Стилі APA, Harvard, Vancouver, ISO та ін.

5

Малевская, А. В., Н. Д. Ильинская та В. М. Андреев. "Разработка методов жидкостного травления разделительной меза-структуры при создании каскадных солнечных элементов". Письма в журнал технической физики 45, № 24 (2019): 14. http://dx.doi.org/10.21883/pjtf.2019.24.48795.17953.

Повний текст джерела

Анотація:

Investigation of the post-growth technique for fabricating multijunction solar sells based on the GaInP/GaAs/Ge heterostructure has been carried out. Investigated were methods of liquid chemical and electro-chemical etching of heterostructure layers. Technology for creating the separation mesa-structure has been developed. The improvement of the surface quality and of the profile of the mesa lateral side for heterostructures of different layer content has been achieved.

Стилі APA, Harvard, Vancouver, ISO та ін.

6

Давыдов, С. Ю. "Простые модели латеральных гетероструктур". Физика твердого тела 60, № 7 (2018): 1389. http://dx.doi.org/10.21883/ftt.2018.07.46129.015.

Повний текст джерела

Анотація:

AbstractGeneral analytical expressions for densities of states of a lateral heterostructure, formed by the contact of two square semi-infinite lattices with single-band and two-band spectra, were obtained in the tight-binding approximation by the Green’s function method. The semi-elliptical density of states was used for numerical estimates, and the model of two interacting dimers was proposed to estimate the charge transfer. Application of this approach to description of lateral epitaxial and graphene-like heterostructures is discussed.

Стилі APA, Harvard, Vancouver, ISO та ін.

7

Li, Xufan, Ming-Wei Lin, Junhao Lin, Bing Huang, Alexander A. Puretzky, Cheng Ma, Kai Wang, et al. "Two-dimensional GaSe/MoSe2misfit bilayer heterojunctions by van der Waals epitaxy." Science Advances 2, no. 4 (April 2016): e1501882. http://dx.doi.org/10.1126/sciadv.1501882.

Повний текст джерела

Анотація:

Two-dimensional (2D) heterostructures hold the promise for future atomically thin electronics and optoelectronics because of their diverse functionalities. Although heterostructures consisting of different 2D materials with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) epitaxy, constructing heterostructures from layered semiconductors with large lattice misfits remains challenging. We report the growth of 2D GaSe/MoSe2heterostructures with a large lattice misfit using two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between the two layers, forming a periodic superlattice. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2monolayer domains in lateral GaSe/MoSe2heterostructures, GaSe monolayers are found to overgrow MoSe2during CVD, forming a stripe of vertically stacked vdW heterostructures at the crystal interface. Such vertically stacked vdW GaSe/MoSe2heterostructures are shown to formp-njunctions with effective transport and separation of photogenerated charge carriers between layers, resulting in a gate-tunable photovoltaic response. These GaSe/MoSe2vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.

Стилі APA, Harvard, Vancouver, ISO та ін.

8

Davydov, S. Yu. "Simple Models of Lateral Heterostructures." Physics of the Solid State 60, no. 7 (July 2018): 1405–12. http://dx.doi.org/10.1134/s1063783418070089.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

9

Wang, Zixuan, Wenshuo Xu, Benxuan Li, Qiaoyan Hao, Di Wu, Dianyu Qi, Haibo Gan, Junpeng Xie, Guo Hong, and Wenjing Zhang. "Selective Chemical Vapor Deposition Growth of WS2/MoS2 Vertical and Lateral Heterostructures on Gold Foils." Nanomaterials 12, no. 10 (May 16, 2022): 1696. http://dx.doi.org/10.3390/nano12101696.

Повний текст джерела

Анотація:

Vertical and lateral heterostructures consisting of atomically layered two-dimensional (2D) materials exhibit intriguing properties, such as efficient charge/energy transfer, high photoresponsivity, and enhanced photocatalytic activities. However, the controlled fabrication of vertical or lateral heterojunctions on metal substrates remains challenging. Herein, we report a facile and controllable method for selective growth of WS2/MoS2 vertical or lateral heterojunctions on polycrystalline gold (Au) foil by tuning the gas flow rate of hydrogen (H2). We find that lateral growth is favored without H2, whereas vertical growth mode can be switched on by introducing 8–10 sccm H2. In addition, the areal coverage of the WS2/MoS2 vertical heterostructures is tunable in the range of 12–25%. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) results demonstrate the quality and absence of cross-contamination of the as-grown heterostructures. Furthermore, we investigate the effects of the H2 flow rate on the morphology of the heterostructures. These pave the way to develop unprecedented 2D heterostructures towards applications in (opto)electronic devices.

Стилі APA, Harvard, Vancouver, ISO та ін.

10

Alharbi, Safia Abdullah R., Kazi Jannatul Tasnim, and Ming Yu. "The first-principles study of structural and electronic properties of two-dimensional SiC/GeC lateral polar heterostructures." Journal of Applied Physics 132, no. 18 (November 14, 2022): 184301. http://dx.doi.org/10.1063/5.0127579.

Повний текст джерела

Анотація:

Two-dimensional (2D) lateral polar heterostructures, constructed by seamlessly stitching 2D polar materials, exhibit unique properties triggered by the in-plane charge transfer between different elements in each domain. Our first-principles study of 2D SiC/GeC lateral polar heterostructures has unraveled their interesting characteristics. The local strain induced by a lattice mismatch leads to an artificial uniaxial strain along the interface. The synergistic effect of such uniaxial strain, the microstructure of interface, and the width of domains modulates the feature of the bandgap with an indirect bandgap nature in armchair lateral heterostructures and a direct bandgap nature in zigzag lateral heterostructures. The bandgap monotonically decreases with increasing the width of domains, showing its tunability. Furthermore, the valence band maximum is found to be mainly contributed from C-2 p orbitals located at both GeC and SiC domains, and the conduction band minimum is mainly contributed from Ge-4 p orbitals located at the GeC domain, implying that most excited electrons prefer to stay at the GeC domain of the SiC/GeC lateral polar heterostructures. Interestingly, a net charge transfer from the SiC domain to the GeC domain was found, resulting in a spontaneous lateral p–n junction, and there is a net charge redistribution at the interfacial region leading to a built-in electric field which is expected to reduce the carrier recombination losses, implying the promising application for visible light photocatalyst, photovoltaics, and water splitting to achieve clean and renewable energy.

Стилі APA, Harvard, Vancouver, ISO та ін.

11

Dou, Letian. "(Invited) Two-Dimensional Organic-Perovskite Hybrid Materials and Heterostructures." ECS Meeting Abstracts MA2024-01, no. 12 (August 9, 2024): 1001. http://dx.doi.org/10.1149/ma2024-01121001mtgabs.

Повний текст джерела

Анотація:

Epitaxial heterostructures based on oxide perovskites and III–V, II–VI and transition metal dichalcogenide semiconductors form the foundation of modern electronics and optoelectronics. Halide perovskites—an emerging family of tunable semiconductors with desirable properties—are attractive for applications such as solution-processed solar cells, light-emitting diodes, detectors and lasers. Their inherently soft crystal lattice allows greater tolerance to lattice mismatch, making them promising for heterostructure formation and semiconductor integration. Atomically sharp epitaxial interfaces are necessary to improve performance and for device miniaturization. However, epitaxial growth of atomically sharp heterostructures of halide perovskites has not yet been achieved, owing to their high intrinsic ion mobility and their poor chemical stability. Therefore, understanding the origins of this instability and identifying effective approaches to suppress ion diffusion are of great importance. In this talk I will present an effective strategy to substantially inhibit in-plane ion diffusion in two-dimensional halide perovskites by incorporating rigid π-conjugated organic ligands. Highly stable and tunable lateral and vertical epitaxial heterostructures, multiheterostructures and superlattices will be demonstrated. Furthermore, using these 2D heterostructures as a new platform, I will present our recent efforts in 1) quantitatively understanding the anion inter-diffusions and migrations, and 2) controlling and manipulating exciton transport and light-emission in halide perovskites.

Стилі APA, Harvard, Vancouver, ISO та ін.

12

Zhao, Liuhuan, Lei Huang, Ke Wang, Weihua Mu, Qiong Wu, Zhen Ma, and Kai Ren. "Mechanical and Lattice Thermal Properties of Si-Ge Lateral Heterostructures." Molecules 29, no. 16 (August 12, 2024): 3823. http://dx.doi.org/10.3390/molecules29163823.

Повний текст джерела

Анотація:

Two-dimensional (2D) materials have drawn extensive attention due to their exceptional characteristics and potential uses in electronics and energy storage. This investigation employs simulations using molecular dynamics to examine the mechanical and thermal transport attributes of the 2D silicene–germanene (Si-Ge) lateral heterostructure. The pre-existing cracks of the Si-Ge lateral heterostructure are addressed with external strain. Then, the effect of vacancy defects and temperature on the mechanical attributes is also investigated. By manipulating temperature and incorporating vacancy defects and pre-fabricated cracks, the mechanical behaviors of the Si-Ge heterostructure can be significantly modulated. In order to investigate the heat transport performance of the Si-Ge lateral heterostructure, a non-equilibrium molecular dynamics approach is employed. The efficient phonon average free path is obtained as 136.09 nm and 194.34 nm, respectively, in the Si-Ge heterostructure with a zigzag and armchair interface. Our results present the design and application of thermal management devices based on the Si-Ge lateral heterostructure.

Стилі APA, Harvard, Vancouver, ISO та ін.

13

Lin, Heng-Fu, Li-Min Liu, and Jijun Zhao. "2D lateral heterostructures of monolayer and bilayer phosphorene." Journal of Materials Chemistry C 5, no. 9 (2017): 2291–300. http://dx.doi.org/10.1039/c7tc00013h.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

14

Jiang, Jin-Wu. "One-dimensional transition metal dichalcogenide lateral heterostructures." Physical Chemistry Chemical Physics 23, no. 48 (2021): 27312–19. http://dx.doi.org/10.1039/d1cp04850c.

Повний текст джерела

Анотація:

The lateral stitching of two different transition metal dichalcogenide nanotubes yields a new tubular structure, a one-dimensional lateral heterostructure, which has an abnormal misfit strain distribution.

Стилі APA, Harvard, Vancouver, ISO та ін.

15

Zhang, Yukai, Xin Qu, Lihua Yang, Xin Zhong, Dandan Wang, Jian Wang, Baiyang Sun, Chang Liu, Jian Lv, and Jinghai Yang. "Two-Dimensional TeB Structures with Anisotropic Carrier Mobility and Tunable Bandgap." Molecules 26, no. 21 (October 23, 2021): 6404. http://dx.doi.org/10.3390/molecules26216404.

Повний текст джерела

Анотація:

Two-dimensional (2D) semiconductors with desirable bandgaps and high carrier mobility have great potential in electronic and optoelectronic applications. In this work, we proposed α-TeB and β-TeB monolayers using density functional theory (DFT) combined with the particle swarm-intelligent global structure search method. The high dynamical and thermal stabilities of two TeB structures indicate high feasibility for experimental synthesis. The electronic structure calculations show that the two structures are indirect bandgap semiconductors with bandgaps of 2.3 and 2.1 eV, respectively. The hole mobility of the β-TeB sheet is up to 6.90 × 102 cm2 V−1 s−1. By reconstructing the two structures, we identified two new horizontal and lateral heterostructures, and the lateral heterostructure presents a direct band gap, indicating more probable applications could be further explored for TeB sheets.

Стилі APA, Harvard, Vancouver, ISO та ін.

16

Grachev A. A., Mruczkiewicz M., Beginin E. N., and Sadovnikov A. V. "Influence of elastic strains on the dipole spin wave spectrum in the lateral system of magnonic crystals with a piezoelectric layer." Physics of the Solid State 64, no. 9 (2022): 1331. http://dx.doi.org/10.21883/pss.2022.09.54176.45hh.

Повний текст джерела

Анотація:

In this work, we will reveal the regularities in the control of the dipole spin-wava spectra of in lateral heterostructures formed from two magnonic crystals with a piezoelectric layer placed on one of them. The electric field control of the spatial and transfer characteristics of dipole spin waves in lateral heterostructures is shown. Based on the finite element method, the influence of distributed elastic deformations on the magnitudes of internal magnetic fields in magnonic crystals is evaluated. Based on the results of numerical simulations, a physical interpretation of the transformation of the eigenmode spectrum of coupled magnon crystals is given. Keywords: spin waves, magnonics, straintronics, lateral structures.

Стилі APA, Harvard, Vancouver, ISO та ін.

17

Dou, Letian. "Two-dimensional Halide Perovskite Lateral Epitaxial Heterostructures." Video Proceedings of Advanced Materials 2, no. 2 (January 1, 2021): Article ID 2021–0150—Article ID 2021–0150. http://dx.doi.org/10.5185/vpoam.2021.0150.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

18

Hannan Mouasvi, S., and H. Simchi. "Spin polarization in lateral two-dimensional heterostructures." Journal of Physics: Condensed Matter 33, no. 14 (February 16, 2021): 145303. http://dx.doi.org/10.1088/1361-648x/abdffd.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

19

Zhang, Junfeng, Weiyu Xie, Jijun Zhao, and Shengbai Zhang. "Band alignment of two-dimensional lateral heterostructures." 2D Materials 4, no. 1 (December 19, 2016): 015038. http://dx.doi.org/10.1088/2053-1583/aa50cc.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

20

Houssa, M., K. Iordanidou, A. Dabral, A. Lu, R. Meng, G. Pourtois, V. V. Afanas'ev, and A. Stesmans. "Contact resistance at graphene/MoS2 lateral heterostructures." Applied Physics Letters 114, no. 16 (April 22, 2019): 163101. http://dx.doi.org/10.1063/1.5083133.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

21

Shi, Enzheng, Biao Yuan, Stephen B. Shiring, Yao Gao, Akriti, Yunfan Guo, Cong Su, et al. "Two-dimensional halide perovskite lateral epitaxial heterostructures." Nature 580, no. 7805 (April 2020): 614–20. http://dx.doi.org/10.1038/s41586-020-2219-7.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

22

Ilg, Matthias, Klaus H. Ploog, and Achim Trampert. "Lateral piezoelectric fields in strained semiconductor heterostructures." Physical Review B 50, no. 23 (December 15, 1994): 17111–19. http://dx.doi.org/10.1103/physrevb.50.17111.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

23

Engel, C., P. Baumgartner, M. Holzmann, J. F. Nützel, and G. Abstreiter. "Lateral photodetector devices on Si/SiGe heterostructures." Thin Solid Films 294, no. 1-2 (February 1997): 347–50. http://dx.doi.org/10.1016/s0040-6090(96)09245-0.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

24

Lorenz, P., V. Lebedev, F. Niebelschütz, S. Hauguth, O. Ambacher, J. A. Schaefer, and S. Krischok. "Characterization of GaN-based lateral polarity heterostructures." physica status solidi (c) 5, no. 6 (May 2008): 1965–67. http://dx.doi.org/10.1002/pssc.200778550.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

25

Cheng, Kai, Yu Guo, Nannan Han, Yan Su, Junfeng Zhang, and Jijun Zhao. "Lateral heterostructures of monolayer group-IV monochalcogenides: band alignment and electronic properties." Journal of Materials Chemistry C 5, no. 15 (2017): 3788–95. http://dx.doi.org/10.1039/c7tc00595d.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

26

Fisichella, Gabriele, Giuseppe Greco, Salvatore di Franco, Raffaella Lo Nigro, Emanuela Schilirò, Fabrizio Roccaforte, and Filippo Giannazzo. "Hot Electron Transistors Based on Graphene/AlGaN/GaN Vertical Heterostructures." Materials Science Forum 858 (May 2016): 1137–40. http://dx.doi.org/10.4028/www.scientific.net/msf.858.1137.

Повний текст джерела

Анотація:

This paper presents a study of the vertical current transport in a graphene (Gr) heterostructure with AlxGa1-xN/GaN, which represent the main building block of a novel high frequency device, the hot electron transistor (HET) with Gr base. The morphological and electrical properties of this heterostructures have been investigated at nanoscale by atomic force microscopy (AFM) and conductive atomic force microscopy (CAFM). In particular, local current-voltage measurements by the CAFM probe revealed the formation of a Schottky contact with low barrier height (∼0.41 eV) and excellent lateral uniformity between Gr and AlGaN. Basing on the electrical parameters extracted from this characterization, the theoretical performances of a HET formed by a metal/Al2O3/Gr/AlGaN/GaN stack have been evaluated.

Стилі APA, Harvard, Vancouver, ISO та ін.

27

Kim, Ji Eun, Won Tae Kang, Van Tu Vu, Young Rae Kim, Yong Seon Shin, Ilmin Lee, Ui Yeon Won, et al. "Ideal PN photodiode using doping controlled WSe2–MoSe2 lateral heterostructure." Journal of Materials Chemistry C 9, no. 10 (2021): 3504–12. http://dx.doi.org/10.1039/d0tc05625a.

Повний текст джерела

Анотація:

As the tight contact interface of the lateral PN junction enables high responsivity, specific detectivity, and fast response speed, atomic-scale two-dimensional (2D) lateral PN heterostructures are emerging as viable alternatives to silicon-based photodiodes.

Стилі APA, Harvard, Vancouver, ISO та ін.

28

Грачев, А. А., M. Mruczkiewicz, Е. Н. Бегинин та А. В. Садовников. "Влияние упругих деформаций на спектр дипольных спиновых волн в латеральной системе магнонных кристаллов с пьезоэлектрическим слоем". Физика твердого тела 64, № 9 (2022): 1345. http://dx.doi.org/10.21883/ftt.2022.09.52831.45hh.

Повний текст джерела

Анотація:

In this work, we will reveal the regularities in the control of the dipole spin-wava spectra of in lateral heterostructures formed from two magnonic crystals with a piezoelectric layer placed on one of them. The electric field control of the spatial and transfer characteristics of dipole spin waves in lateral heterostructures is shown. Based on the finite element method, the influence of distributed elastic deformations on the magnitudes of internal magnetic fields in magnonic crystals is evaluated. Based on the results of numerical simulations, a physical interpretation of the transformation of the eigenmode spectrum of coupled magnon crystals is given.

Стилі APA, Harvard, Vancouver, ISO та ін.

29

Ha, Chu Viet, Bich Ngoc Nguyen Thi, Pham Quynh Trang, R. Ponce-Pérez, Vu Thi Kim Lien, J. Guerrero-Sanchez, and D. M. Hoat. "Semiconductor and topological phases in lateral heterostructures constructed from germanene and AsSb monolayers." RSC Advances 13, no. 26 (2023): 17968–77. http://dx.doi.org/10.1039/d3ra01867a.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

30

Tian, Xiao-Qing, Lin Liu, Zhi-Rui Gong, Yu Du, Juan Gu, Boris I. Yakobson, and Jian-Bin Xu. "Unusual electronic and magnetic properties of lateral phosphorene–WSe2 heterostructures." Journal of Materials Chemistry C 4, no. 27 (2016): 6657–65. http://dx.doi.org/10.1039/c6tc01978a.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

31

Liu, Yonghui. "Band engineering of Dirac materials in SbmBin lateral heterostructures." RSC Advances 11, no. 28 (2021): 17445–55. http://dx.doi.org/10.1039/d1ra02702f.

Повний текст джерела

Анотація:

Band engineering the electronic structures of Sb_mBi_n lateral heterostructures (LHS) from antimonene and bismuthene is systematically investigated using first principles calculations.

Стилі APA, Harvard, Vancouver, ISO та ін.

32

Tan, Ruishan, Yanzi Lei, Luyan Li, and Shuhua Shi. "Toward lateral heterostructures with two-dimensional MoX2H2 (X = As, Sb)." Physical Chemistry Chemical Physics 22, no. 39 (2020): 22584–90. http://dx.doi.org/10.1039/d0cp03530k.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

33

Qin, Huasong, Qing-Xiang Pei, Yilun Liu, and Yong-Wei Zhang. "The mechanical and thermal properties of MoS2–WSe2 lateral heterostructures." Physical Chemistry Chemical Physics 21, no. 28 (2019): 15845–53. http://dx.doi.org/10.1039/c9cp02499a.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

34

Yang, Yang, Yuhao Zhou, Zhuang Luo, Yandong Guo, Dewei Rao, and Xiaohong Yan. "Electronic structures and transport properties of SnS–SnSe nanoribbon lateral heterostructures." Physical Chemistry Chemical Physics 21, no. 18 (2019): 9296–301. http://dx.doi.org/10.1039/c9cp00427k.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

35

Zheng, Biyuan, Chao Ma, Dong Li, Jianyue Lan, Zhe Zhang, Xingxia Sun, Weihao Zheng, et al. "Band Alignment Engineering in Two-Dimensional Lateral Heterostructures." Journal of the American Chemical Society 140, no. 36 (August 24, 2018): 11193–97. http://dx.doi.org/10.1021/jacs.8b07401.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

36

Tian, Xiaoqing, Lin Liu, Yu Du, Juan Gu, Jian-bin Xu, and Boris I. Yakobson. "Variable electronic properties of lateral phosphorene–graphene heterostructures." Physical Chemistry Chemical Physics 17, no. 47 (2015): 31685–92. http://dx.doi.org/10.1039/c5cp05443e.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

37

Zhang, Xin-Quan, Chin-Hao Lin, Yu-Wen Tseng, Kuan-Hua Huang, and Yi-Hsien Lee. "Synthesis of Lateral Heterostructures of Semiconducting Atomic Layers." Nano Letters 15, no. 1 (December 15, 2014): 410–15. http://dx.doi.org/10.1021/nl503744f.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

38

Shimon, G., C. A. Ross, and A. O. Adeyeye. "Self-aligned Ni/NiFe/Fe magnetic lateral heterostructures." Journal of Applied Physics 118, no. 15 (October 21, 2015): 153901. http://dx.doi.org/10.1063/1.4933096.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

39

Susarla, Sandhya, Luiz Henrique Galvão Tizei, Steffi Y. Woo, Alberto Zobelli, Odile Stephan, and Pulickel M. Ajayan. "Low Loss EELS of Lateral MoS2/WS2 Heterostructures." Microscopy and Microanalysis 25, S2 (August 2019): 640–41. http://dx.doi.org/10.1017/s1431927619003933.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

40

Aras, Mehmet, Çetin Kılıç, and S. Ciraci. "Lateral and Vertical Heterostructures of Transition Metal Dichalcogenides." Journal of Physical Chemistry C 122, no. 3 (January 17, 2018): 1547–55. http://dx.doi.org/10.1021/acs.jpcc.7b08256.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

41

Bogaert, Kevin, Song Liu, Jordan Chesin, Denis Titow, Silvija Gradečak, and Slaven Garaj. "Diffusion-Mediated Synthesis of MoS2/WS2 Lateral Heterostructures." Nano Letters 16, no. 8 (August 2016): 5129–34. http://dx.doi.org/10.1021/acs.nanolett.6b02057.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

42

Ogikubo, Tsuyoshi, Hiroki Shimazu, Yuya Fujii, Koichi Ito, Akio Ohta, Masaaki Araidai, Masashi Kurosawa, Guy Le Lay, and Junji Yuhara. "Continuous Growth of Germanene and Stanene Lateral Heterostructures." Advanced Materials Interfaces 7, no. 10 (March 30, 2020): 1902132. http://dx.doi.org/10.1002/admi.201902132.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

43

Jin, Hao, Jianwei Li, Bin Wang, Yunjin Yu, Langhui Wan, Fuming Xu, Ying Dai, Yadong Wei, and Hong Guo. "Electronics and optoelectronics of lateral heterostructures within monolayer indium monochalcogenides." Journal of Materials Chemistry C 4, no. 47 (2016): 11253–60. http://dx.doi.org/10.1039/c6tc04241d.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

44

Chen, Xiaoshuang, Yunfeng Qiu, Guangbo Liu, Wei Zheng, Wei Feng, Feng Gao, Wenwu Cao, YongQing Fu, Wenping Hu, and PingAn Hu. "Tuning electrochemical catalytic activity of defective 2D terrace MoSe2 heterogeneous catalyst via cobalt doping." Journal of Materials Chemistry A 5, no. 22 (2017): 11357–63. http://dx.doi.org/10.1039/c7ta02327h.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

45

Yang, Hongchao, Jinjin Li, Lin Yu, Baibiao Huang, Yandong Ma, and Ying Dai. "A theoretical study on the electronic properties of in-plane CdS/ZnSe heterostructures: type-II band alignment for water splitting." Journal of Materials Chemistry A 6, no. 9 (2018): 4161–66. http://dx.doi.org/10.1039/c7ta10624f.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

46

Wang, Hao, Wei Wei, Fengping Li, Baibiao Huang, and Ying Dai. "Electronic and magnetic properties of the one-dimensional interfaces of two-dimensional lateral GeC/BP heterostructures." Physical Chemistry Chemical Physics 21, no. 17 (2019): 8856–64. http://dx.doi.org/10.1039/c9cp01196j.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

47

Jin, Hao, Vincent Michaud-Rioux, Zhi-Rui Gong, Langhui Wan, Yadong Wei, and Hong Guo. "Size dependence in two-dimensional lateral heterostructures of transition metal dichalcogenides." Journal of Materials Chemistry C 7, no. 13 (2019): 3837–42. http://dx.doi.org/10.1039/c9tc00063a.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

48

Kim, Gwangwoo, and Hyeon Suk Shin. "Spatially controlled lateral heterostructures of graphene and transition metal dichalcogenides toward atomically thin and multi-functional electronics." Nanoscale 12, no. 9 (2020): 5286–92. http://dx.doi.org/10.1039/c9nr10859a.

Повний текст джерела

Анотація:

This review demonstrates growth and electronic applications of lateral heterostructures of graphene and TMDs, highlighting key technologies controlling wafer-scale growth of continuous films for practical applications.

Стилі APA, Harvard, Vancouver, ISO та ін.

49

Tian, Xiao-Qing, Lin Liu, Zhi-Rui Gong, Yu Du, Juan Gu, Boris I. Yakobson, and Jian-Bin Xu. "Correction: Unusual electronic and magnetic properties of lateral phosphorene–WSe2 heterostructures." Journal of Materials Chemistry C 4, no. 28 (2016): 6914. http://dx.doi.org/10.1039/c6tc90123a.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

50

Song, Shun, Jian Gong, Xiangwei Jiang, and Shenyuan Yang. "Influence of the interface structure and strain on the rectification performance of lateral MoS₂/graphene heterostructure devices." Physical Chemistry Chemical Physics 24, no. 4 (2022): 2265–74. http://dx.doi.org/10.1039/d1cp04502d.

Повний текст джерела

Анотація:

We systematically study the influence of interface configuration and strain on the electronic and transport properties of lateral MoS2/graphene heterostructures by first-principles calculations and quantum transport simulations.

Стилі APA, Harvard, Vancouver, ISO та ін.

Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!