Готові списки джерел за темами / Ion bombardment / Статті в журналах
Щоб переглянути інші типи публікацій з цієї теми, перейдіть за посиланням: Ion bombardment.

Статті в журналах з теми "Ion bombardment"

Автор: Grafiati
Опубліковано: 4 червня 2021
Оновлено: 29 липня 2024

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Ознайомтеся з топ-50 статей у журналах для дослідження на тему "Ion bombardment".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Переглядайте статті в журналах для різних дисциплін та оформлюйте правильно вашу бібліографію.

1

Lu, Rui, Guangliang Hu, Wanli Zhao, Tongyu Liu, Jiangqi Fan, Chunrui Ma, Lu Lu, Linyue Liu, and Ming Liu. "Effects of He-ion bombardment on the ferroelectric and dielectric properties of BaHf0.17Ti0.83O3 films." Applied Physics Letters 121, no. 7 (August 15, 2022): 072901. http://dx.doi.org/10.1063/5.0107438.

Повний текст джерела
Анотація:
Focused helium ion bombardment provides an effective means to modify the properties of ferroelectric materials. This work systematically investigates the effect of helium ion bombardment on the structural, ferroelectric, and dielectric properties of relaxor BaHf0.17Ti0.83O3 thin films at different bombardment doses in the range of 1 × 1012 to 7 × 1015 ions/cm2. The films show more defects and slightly expanded out-of-plane lattice parameters with an increase in dose. Despite helium ion bombardment introducing more defects and structural disorder in the system, the bombardment-induced dipole polarization leads to enhanced ferroelectricity. Our findings highlight energetic helium ion bombardment as an effective way to enhance the ferroelectricity of relaxor materials.
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Choi, Seung Kyu, Jae Min Jang, and Woo Gwang Jung. "Influence of Ion Bombardment of Sapphire on Electrical Property of GaN Layer." Solid State Phenomena 124-126 (June 2007): 615–18. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.615.

Повний текст джерела
Анотація:
Ion beam bombardment of proton, He+, Ar+, Xe+ ions were made on single crystal substrate by cyclotron. The GaN epi-layer material was grown by MOCVD on ion beam bombarded substrate. After deposition of GaN epi-layer heat treatment was made in flow of N2. The RMS roughness of the substrate was increased by ion bombardment. The GaN crystal quality for substrates of ion bombardment was better than that for bare substrates. Raman spectrum analysis indicated the induced stress in the GaN epi-layer during the heat treatment. The electrical property of GaN was improved after heat treatment. It is estimated that ion bombardment of proton with current of 1μA is the optimum condition in our experimental condition.
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Wang, Airu, Osamu Ohashi, and N. Yamaguchi. "Effect of Argon Ion Bombardment on Diffusion Bonded Joint of Various Metals." Materials Science Forum 449-452 (March 2004): 901–4. http://dx.doi.org/10.4028/www.scientific.net/msf.449-452.901.

Повний текст джерела
Анотація:
Specimens of aluminum (Al), austenitic stainless steel (SUS304L), pure iron (Fe) and Oxygen-free high conductivity copper (Cu) were treated by argon ion bombardment, and then were bonded by diffusion bonding method. The effects of argon ion bombardment on diffusion-bonded joints of four kinds of metallic materials were compared from the tensile strength at real bonded area and the fractographs. The results showed that bonding temperature was lowered by argon ion bombardment treatment for four kinds of materials. The effect of argon ion bombardment on diffusion-bonded joint depended strongly on the chemistry of the surface to be bonded, and increased in Al, SUS304L, Fe, and Cu in turn.
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Gholami, Nasim, Babak Jaleh, Reza Golbedaghi, Majid Mojtahedzadeh Larijani, Pikul Wanichapichart, Mahmoud Nasrollahzadeh, and Rajender S. Varma. "Modification of Chitosan Membranes via Methane Ion Beam." Molecules 25, no. 10 (May 13, 2020): 2292. http://dx.doi.org/10.3390/molecules25102292.

Повний текст джерела
Анотація:
Chitosan has been used for biomedical applications in recent years, primarily because of its biocompatibility. A chitosan membrane with a 30 μm thickness was prepared and investigated for its surface modification using methane ions. Methane ions were implanted into the chitosan membrane using a Kaufman ion source; bombardment was accomplished using three accelerating voltages of ion beams—30, 55, and 80 kV. The influence of the ion bombardment on morphology, crystallinity, and hydrophilicity was investigated. Attenuated total reflectance Fourier-transform infrared (ATR-FTIR) spectroscopy analysis showed that a triplet bond appeared after the implantation of methane ions (acceleration voltage: 80 kV), culminating in the creation of a more amorphous membrane structure. The analyses of atomic force microscopy (AFM) images showed that, with the increase in bombardment energy, the roughness of the surface changed. These results revealed that ion bombardment improved the hydrophilicity of the membranes and the water fluxes of chitosan membranes altered after methane ion bombardment.
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Yamashita, Mutsuo. "Metal ion production by ion bombardment." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 14, no. 5 (September 1996): 2795–801. http://dx.doi.org/10.1116/1.580202.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Hobday, Steven, Roger Smith, Ursula Gibson, and Asta Richter. "Ion bombardment of C60films." Radiation Effects and Defects in Solids 142, no. 1-4 (June 1997): 301–18. http://dx.doi.org/10.1080/10420159708211615.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Wehner, G. K. "SPUTTERING BY ION BOMBARDMENT." Annals of the New York Academy of Sciences 101, no. 3 (December 22, 2006): 803–4. http://dx.doi.org/10.1111/j.1749-6632.1963.tb54935.x.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Beardmore, Keith, and Roger Smith. "Ion bombardment of polyethylene." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 102, no. 1-4 (August 1995): 223–27. http://dx.doi.org/10.1016/0168-583x(95)80145-c.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Howe, L. M., D. P. McCooeye, M. H. Rainville, J. D. Bonnett, and D. Phillips. "Ion bombardment of Zr3Fe." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 59-60 (July 1991): 884–88. http://dx.doi.org/10.1016/0168-583x(91)95725-s.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Kim, Sang-Pil, Huck Beng Chew, Eric Chason, Vivek B. Shenoy, and Kyung-Suk Kim. "Nanoscale mechanisms of surface stress and morphology evolution in FCC metals under noble-gas ion bombardments." Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences 468, no. 2145 (May 23, 2012): 2550–73. http://dx.doi.org/10.1098/rspa.2012.0042.

Повний текст джерела
Анотація:
Here, we uncover three new nanoplasticity mechanisms, operating in highly stressed interstitial-rich regions in face-centred-cubic (FCC) metals, which are particularly important in understanding evolution of surface stress and morphology of a FCC metal under low-energy noble-gas ion bombardments. The first mechanism is the configurational motion of self-interstitials in subsonic scattering during ion bombardments. We have derived a stability criterion of self-interstitial scattering during ion embedding, which consistently predicts the possibility of vacancy- and interstitial-rich double-layer formation for various ion bombardments. The second mechanism is the growth by gliding of prismatic dislocation loops (PDLs) in a highly stressed interstitial-rich zone. This mechanism allows certain prismatic dislocations with their Burgers vectors parallel to the surface to grow in subway-glide mode (SGM) during ion bombardment. The SGM growth creates a large population of nanometre-sized prismatic dislocations beneath the surface. The third mechanism is the Burgers vector switching of a PDL that leads to unstable eruption of adatom islands during certain ion bombardments of FCC metals. We have also derived the driving force and kinetics for the growth by gliding of prismatic dislocations in an interstitial-rich environment as well as the criterion for Burgers vector switching, which consistently clarifies previously unexplainable experimental observations.
Стилі APA, Harvard, Vancouver, ISO та ін.
11

Window, B., and F. Sharples. "Effect of ion bombardment during the low-mobility growth of metallic superlattices." Journal of Materials Research 3, no. 5 (October 1988): 856–61. http://dx.doi.org/10.1557/jmr.1988.0856.

Повний текст джерела
Анотація:
The structure of sputtered Mo/Fe superlattices of periodicities 9 to 30 Å grown at a substrate temperature of 300 K at various pressures and levels of low-energy ion bombardment have been studied using x-ray diffraction. The samples show the growth of an amorphous phase below 17 Å periodicity and a crystalline phase above 21 Å, with mixed phases in between. Limited ion bombardment reduces the coherency in the growth direction in the crystalline phase, while heavy bombardment sufficient to promote significant mixing acts to improve the coherency, but not to the level observed in films with no bombardment. The relative intensities of the average lattice spacing reflection and its most intense satellite give the composition profile change due to the ion mixing. Some ion bombardment of the iron layer markedly improves the reflectance for x-rays at both low and high angles near the Bragg peak due to the average lattice spacing.
Стилі APA, Harvard, Vancouver, ISO та ін.
12

Fujiwara, Yukio, and Naoaki Saito. "Negative ion beam bombardment of a protic ionic liquid: Alleviating surface charging and damage and analyzing the surface of organic insulating materials." Journal of Vacuum Science & Technology A 40, no. 5 (September 2022): 053203. http://dx.doi.org/10.1116/6.0001999.

Повний текст джерела
Анотація:
Positive ion beams are widely used in surface processing and analysis; however, serious surface charging can occur in the case of insulating materials. To address this issue, we investigate bombardment effects of ionic liquid negative ions emitted from the tip of a sharp needle wetted with the protic ionic liquid, diethylmethylammonium trifluoromethanesulfonate. Experimental results show that the potential of an electrically floating metal target bombarded with the ionic liquid negative ions is slightly higher (about 1 V) than that of a front electrode, indicating that the target potential can be controlled by adjusting the potential of a nearby electrode. We also investigate the application of the negative ion bombardment in secondary ion mass spectrometry. Two types of insulating materials, polytetrafluoroethylene and polyethylene glycol, are analyzed. Experimental results show that the negative ion bombardment allows one to analyze organic insulating materials by adjusting sample bias potential, without charge neutralization such as electron flooding. Results obtained show that the ionic liquid negative ion beam is a useful tool for alleviating sample charging and damage because tens of negatively charged low-energy constituent atoms hit a surface locally and simultaneously. The ionic liquid negative ion bombardment is shown to have the advantages of both negative and polyatomic ion bombardment.
Стилі APA, Harvard, Vancouver, ISO та ін.
13

Ai, Yong Ping, Ying Ying Zeng, Li Jun Liu, Xiao Ming Huang, and Tai Ping Zhou. "Influence of Ar+ Energy of Bombardment Cu Target and Low Energy Assisted Bombardment on Cu-W Thin Film Structure by Ion Beam Sputtering." Key Engineering Materials 474-476 (April 2011): 448–53. http://dx.doi.org/10.4028/www.scientific.net/kem.474-476.448.

Повний текст джерела
Анотація:
This paper is to study the influence of Ar+ energy of bombardment Cu target and low energy assisted bombardment on Cu-W film structure in the preparation of Cu-W thin film by dual ion beam sputtering technique with iron as the substrate and argon as ion source. The results shown : when Ar+ energy of bombardment tungsten target is about 3keV, the beam of copper target is 20mA, Ar+ energy of bombardment Cu target is 1kev, 1.5kev and 2keV respectively, Cu-W thin film prepared by ion beam sputtering exists with the skeleton of tungsten in amorphous phase mixing with copper grains; with the increase of Ar+ energy of of bombardment copper target, the grain size of copper increases slightly; influenced by crystal defects and lattice distortion, copper diffraction peak offsets a little. Low energy assisted bombardment helps to increase grain growth of copper and can decrease crystal defects and lattice distortion. But with excessive energy, thin film fails to deposit.
Стилі APA, Harvard, Vancouver, ISO та ін.
14

Hirano, Motohisa, and Shojiro Miyake. "Tribological Improvement of Ag Films by Ion Beam Enhanced Deposition." Journal of Tribology 110, no. 1 (January 1, 1988): 64–68. http://dx.doi.org/10.1115/1.3261576.

Повний текст джерела
Анотація:
This paper investigates the tribological properties of Ag film fabricated by ion enhanced deposition at atmospheric room temperature, whereby 150 keV Ar ion bombardment and Ag ion plating are performed simultaneously. In the absence of a lubricant, friction test apparatus employing ball-plate geometry is used. Also, properties such as film crystallinity, morphology and concentration profile are examined to study the high energy ion bombardment effect related to the film’s tribological properties. The activation of the mutual diffusion process which results from simultaneous ion bombardment during ion plating, as well as promotion of the crystallization in the ion bombarded film due to subsequent annealing, can greatly extend the mixing layer, and thus enhances the sliding life of the Ag film.
Стилі APA, Harvard, Vancouver, ISO та ін.
15

Selyukov R. V., Izyumov M. O., Naumov V. V., and Mazaletskiy L. A. "Formation of (100) texture in thin Ti films under low-energy ion bombardment." Technical Physics Letters 48, no. 15 (2022): 25. http://dx.doi.org/10.21883/tpl.2022.15.53816.18890.

Повний текст джерела
Анотація:
10-40 nm Ti films with mixed crystalline texture (100)+(001) are exposed to ion bombardment in inductively coupled Ar plasma by applying the bias -30 V to the films. It is found that such a treatment leads to the formation of (100) texture in films. This result is explained by the generation of the compressive stress in films as a result of ion bombardment. The thinner the film the less time is required to form the (100) texture. Keywords: crystalline texture, ion bombardment, titanium, thin films.
Стилі APA, Harvard, Vancouver, ISO та ін.
16

Kupferer, Astrid, Michael Mensing, Jan Lehnert, Stephan Mändl, and Stefan Mayr. "Carbon and Neon Ion Bombardment Induced Smoothing and Surface Relaxation of Titania Nanotubes." Nanomaterials 11, no. 9 (September 21, 2021): 2458. http://dx.doi.org/10.3390/nano11092458.

Повний текст джерела
Анотація:
Titania nanotube arrays with their enormous surface area are the subject of much attention in diverse fields of research. In the present work, we show that not only 60 keV and 150 keV ion bombardment of amorphous titania nanotube arrays yields defect creation within the tube walls, but it also changes the surface morphology: the surface relaxes and smoothens in accordance with a curvature-driven surface material’s transport mechanism, which is mediated by radiation-induced viscous flow or radiation-enhanced surface diffusion, while the nanotubes act as additional sinks for the particle surface currents. These effects occur independently of the ion species: both carbon and neon ion bombardments result in comparable surface relaxation responses initiated by an ion energy of 60 keV at a fluence of 1 × 1016 ions/cm2. Using atomic force microscopy and contact angle measurements, we thoroughly study the relaxation effects on the surface topography and surface free energy, respectively. Moreover, surface relaxation is accompanied by further amorphization in surface-near regions and a reduction in the mass density, as demonstrated by Raman spectroscopy and X-ray reflectivity. Since ion bombardment can be performed on global and local scales, it constitutes a versatile tool to achieve well-defined and tunable topographies and distinct surface characteristics. Hence, different types of nanotube arrays can be modified for various applications.
Стилі APA, Harvard, Vancouver, ISO та ін.
17

YONEKURA, DAISUKE, and RI-ICHI MURAKAMI. "INFLUENCE OF ION BOMBARDMENT ON CRITICAL LOAD OF CrN FILM DEPOSITED ONTO ALUMINUM ALLOY BY ARC ION PLATING METHOD." International Journal of Modern Physics B 20, no. 25n27 (October 30, 2006): 3842–47. http://dx.doi.org/10.1142/s0217979206040465.

Повний текст джерела
Анотація:
To improve the adhesive strength between the film and substrate, ion bombardment is frequently performed before the deposition of thin film coatings. In this study scratch tests were carried out on aluminum alloy protected with CrN film coated by arc ion plating method. In order to investigate the influence of ion bombardment conditions on the adhesive strength between the aluminum alloy substrate and the CrN coating, the ion bombardment process was performed before CrN coating under several different bias voltages. The properties near the interface were analyzed using SIMS. As a result, the ion bombardment process had an optimum condition and excessive bias voltage reduced the critical load. A Cr rich layer forms near the substrate surface by implantation of Cr ions due to the high incident energy ions. The Cr rich layer is shallow for the high critical load sample, while the low critical load sample has a deep Cr rich layer. It appears that the adhesion strength between the substrate and the film will depend on the depth or intensity of this Cr rich layer.
Стилі APA, Harvard, Vancouver, ISO та ін.
18

Goto, Tetsuya, Yoshinobu Shiba, Akinobu Teramoto, Yukio Kishi, and Shigetoshi Sugawa. "Effect of charge-up of surfaces of sintered Y2O3 and yttrium oxyfluoride on their erosion rates due to ion bombardment." Journal of Vacuum Science & Technology B 40, no. 6 (December 2022): 062205. http://dx.doi.org/10.1116/6.0002162.

Повний текст джерела
Анотація:
The erosion rate of sintered Y2O3 and yttrium oxyfluoride (Y-O-F) due to Ar ion bombardment was investigated for use in the plasma process chamber. The Ar ion bombardment was performed by irradiations of Ar plasma and Ar ion beam. In addition, charge-up behavior of these ceramics was investigated by two methods. One was the measurement of the surface voltage during the plasma irradiation (the so-called self-bias voltage), and the other was the measurement of the surface voltage generated due to the accumulation of static electricity in the clean room air. It was found that the negative self-bias voltage of the Y2O3 surface was smaller than that of Y-O-F. It was also found that Y2O3 was easily positively charged by the accumulation of the static electricity compared to Y-O-F, which was consistent with the observed relationship of the self-bias voltages between Y2O3 and Y-O-F. For the evaluation of the erosion rate due to Ar ion bombardment, it was found that the material and setting of masks to make the erosion step for evaluating the rate greatly affected the results. When electrically conductive masks with electrically connecting to a substrate were used, the erosion rate of Y-O-F was smaller than that of Y2O3. The results suggested that the intrinsic ion-bombardment-induced erosion rate of Y-O-F was smaller than that of Y2O3, because the ion bombardment energy was expected to be almost the same due to the existence of the conductive masks. On the other hand, when insulating masks were used, the rates of Y2O3 and Y-O-F were almost the same level. Considering the aforementioned charge-up behavior, the results suggested that a relatively larger positive charge-up of the Y2O3 surface during the ion bombardment decelerated injecting ions, resulting in the decrease in ion bombardment energy and, thus, the erosion rate.
Стилі APA, Harvard, Vancouver, ISO та ін.
19

Iwaki, Masaya. "Ion Beam Modification of Carbon Materials." Solid State Phenomena 107 (October 2005): 107–10. http://dx.doi.org/10.4028/www.scientific.net/ssp.107.107.

Повний текст джерела
Анотація:
A study has been made of surface properties of carbon materials modified by ion beams. Substrates used were natural diamonds, glass-like carbon plates and polymer sheets. Ion species were chemically-active elements such as C, N and O, inert gas elements such as He, Ne and Ar, and metallic elements such as Cr and Ti. It was found that diamond becomes electrically conductive in ion implanted layers, which are amorphous or graphite-like structures. Electrical conductivity depends on implanted species, doses and target temperatures. It was found that glass-like carbon consisting of graphite and disordered graphite becomes amorphous due to ion beam bombardment. Amorphization causes the wear resistance to improve. The electrochemical properties changes depending on implanted species. The wear resistance and electrochemical properties depended on the target temperature during ion implantation. Ion beam bombardment to polymers has been carried out to control the electrical conductivity, cell adhesion and bio-compatibility. The electrical conductivity of polyimide films increases as the dose increases. The saturated sheet resistivity of implanted layers depends on ion species, dose and dose rate. It was found that the cell adhesion can be controlled by ion beam bombardment. The results were used in the fields of clinical examinations. In summary, ion beam bombardment to carbon materials is useful to control the carbon structures and surface properties depending on ion implantation conditions.
Стилі APA, Harvard, Vancouver, ISO та ін.
20

Rossnagel, S. M., and J. J. Cuomo. "Ion-Beam-Assisted Deposition and Synthesis." MRS Bulletin 12, no. 2 (March 1987): 40–51. http://dx.doi.org/10.1557/s0883769400068391.

Повний текст джерела
Анотація:
Concurrent energetic particle bombardment during film deposition can strongly modify the structural and chemical properties of the resulting thin film. The interest in this technique, ion-assisted deposition, comes about because it can be used to produce thin films with properties not achievable by conventional deposition. Bombardment by low energy ions occurs during almost all plasma-based thin film deposition techniques. Bombardment of a growing film, particularly by accelerated ions, can also be combined with non-plasma-based deposition techniques, such as evaporation, to simulate some of the effects observed with sputtering. The bombarding particle flux is usually controllable so that the arrival rate, energy, and species can be independently varied from the depositing flux. Thus, a basic aspect of ion-beam-based deposition techniques is the “control” often absent in plasma-based techniques. In plasmas, the voltage, current, and pressure are all interdependent. The energetic bombardment at the substrate-film interface depends on the various properties of the plasma, as does the deposition rate. It is often difficult, or even impossible, to decouple these processes. With ion-beam-based deposition techniques, the ion bombardment is essentially independent of the deposition process, and both can be more easily controlled.The incident energetic particle contributes some of its energy or momentum to irreversibly change the dynamics of the film surface. The incident particle may also be incorporated into the growing film, changing the film's chemical nature. The changes induced by particle bombardment during deposition are often not characteristic of equilibrium thermodynamics because the incident particle's energy is often many times the local adsorption or binding energy.
Стилі APA, Harvard, Vancouver, ISO та ін.
21

Yonekura, Daisuke, Tomoyuki Ishikawa, and Riichi Murakami. "Influence of Ion Bombardment Process on Adhesion between CrN Coatings and Aluminum Alloy." Key Engineering Materials 353-358 (September 2007): 1887–90. http://dx.doi.org/10.4028/www.scientific.net/kem.353-358.1887.

Повний текст джерела
Анотація:
Scratch tests were carried out to examine the influence of gas pressure during ion bombarding on adhesion between CrN coatings and aluminum alloy using nitrogen and argon gas. The critical load clearly increased with increasing the nitrogen gas pressure. However, argon gas pressure hardly affected the critical load. The result of SIMS showed that ion bombardment in nitrogen gas generated high Cr content layer at the aluminum substrate surface and the Cr content increased with increasing the pressure. The ion bombardment in argon gas generated low Cr content surface layer and the pressure hardly affected the critical load. Thus, the high Cr content layer by ion bombardment in the high nitrogen pressure improved adhesion between CrN coatings and aluminum alloy
Стилі APA, Harvard, Vancouver, ISO та ін.
22

Tay, B. K., X. Shi, S. P. Lau, Q. Zhang, H. C. Chua, J. R. Shi, E. C. Lim, and H. Y. Lee. "X-RAY REFLECTIVITY STUDY OF TETRAHEDRAL AMORPHOUS CARBON FILMS." International Journal of Modern Physics B 14, no. 02n03 (January 30, 2000): 181–87. http://dx.doi.org/10.1142/s0217979200000170.

Повний текст джерела
Анотація:
Hydrogen-free amorphous carbon films were deposited at different deposition bais voltage on a single silicon wafer by a process known as Filtered Cathodic Vacuum Arc (FCVA). The influences of different deposition bias voltages on the microstructure and the properties of thin tetrahedral amorphous carbon (ta-C) films, such as surface roughness, film mass density and thickness, have been studied by means of the x-ray reflectivity technique (XRR) for the first time. The microstructure of these films deposited on silicon wafers was stimulated by a four-layer model consisting of a ta-C layer, a mixed ta-C:Si layer, Si-O layer and the silicon subtrate. The mixed ta-C:Si layer consisting of the mixture of ta-C and silicon simulates the carbon ion impinging / diffusion into the surface of the silicon substrate. The mass density and the roughness of the film are found to be dependent on the impinging ion bombardment energy. The mass density increases with increase in ion bombardment energy up to 100 eV. Beyond 100 eV, the mass density decreases with further increase in ion bombardment energy up to 100 eV. Beyond 100 EV, the mass density decreases with further increase in ion bombardment energy. The surface roughness decreases with increasing ion bambardment energy to a minimum value at 100 eV, after which it increases with further increase in ion bombardment energy. The thickness of the films obtained by XRR technique correlates well with the thickness measurement obtained by spectral reflectometry. The existence of the Si-O layer was verified by Auger depth profiling.
Стилі APA, Harvard, Vancouver, ISO та ін.
23

Abdul-Kader, A. M., and Andrzej Turos. "Ion Beam Induced Modifications of Biocompatible Polymer." Solid State Phenomena 239 (August 2015): 149–60. http://dx.doi.org/10.4028/www.scientific.net/ssp.239.149.

Повний текст джерела
Анотація:
Ion beam bombardment has shown great potential for improving the surface properties of polymers. In this paper, the ion beam-polymer interaction mechanisms are briefly discussed. The main objective of this research was to study the effects of H-ion beam on physico-chemical properties of Ultra-high-molecular-weight polyethylene (UHMWPE) as it is frequently used in biomedical applications. UHMWPE was bombarded with 65 keV H-ions to fluences ranging from 1x1014–2x1016 ions/cm2. Changes of surface layer composition produced by ion bombardment of UHMWPE samples were studied. The hydrogen release and oxygen uptake induced by ion beam bombardment were determined by Nuclear reaction analysis (NRA) using the 1H(15N, αγ)12C and Rutherford backscattering spectrometry (RBS), respectively. Tribological and hardness properties at the polymer near surface region were studied by means of friction coefficient and micro-hardness testers, respectively. Wettability of the bombarded surfaces was determined by measuring the contact angle for distilled water. The obtained results showed that the ion bombardment induced hydrogen release increases with the increasing ion fluence. An important effect observed, was the rapid oxidation of samples, which occurs after exposure of bombarded samples to air. These effects resulted in important modifications of the surface properties of bombarded material such as change of friction coefficient, hardness and improved wettability.
Стилі APA, Harvard, Vancouver, ISO та ін.
24

Li, Chengji, and Zhong Xu. "Diffusion Mechanism of Ion Bombardment." Surface Engineering 3, no. 4 (January 1987): 310–12. http://dx.doi.org/10.1179/sur.1987.3.4.310.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
25

Morant, C., J. M. Sanz, and L. Galán. "Ar-ion bombardment effects onZrO2surfaces." Physical Review B 45, no. 3 (January 15, 1992): 1391–98. http://dx.doi.org/10.1103/physrevb.45.1391.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
26

Bachman, B. J., and M. J. Vasile. "Ion bombardment of polyimide films." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7, no. 4 (July 1989): 2709–16. http://dx.doi.org/10.1116/1.575779.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
27

Malherbe, Johan B., O. S. Odutemowo, E. G. Njoroge, D. F. Langa, T. T. Hlatshwayo, and C. C. Theron. "Ion bombardment of glassy carbon." Vacuum 149 (March 2018): 19–22. http://dx.doi.org/10.1016/j.vacuum.2017.11.006.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
28

Doughty, G. "Ion bombardment modification of surfaces." Tribology International 19, no. 1 (February 1986): 52–54. http://dx.doi.org/10.1016/0301-679x(86)90096-4.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
29

Johnson, R. E., and L. J. Lanzerotti. "Ion bombardment of interplanetary dust." Icarus 66, no. 3 (June 1986): 619–24. http://dx.doi.org/10.1016/0019-1035(86)90095-3.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
30

McLafferty, Fred W. "Fast atom/ion bombardment (FAB)." International Journal of Mass Spectrometry and Ion Processes 122 (December 1992): 1–2. http://dx.doi.org/10.1016/0168-1176(92)87003-w.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
31

Falcone, G., and F. Gullo. "Sputtering by light-ion bombardment." Physics Letters A 125, no. 8 (November 1987): 432–34. http://dx.doi.org/10.1016/0375-9601(87)90178-2.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
32

Brown, W. L. "Ion bombardment effects in polymers." Radiation Effects 98, no. 1-4 (September 1986): 115–37. http://dx.doi.org/10.1080/00337578608206104.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
33

Liu, J., G. L. Huppert, and H. H. Sawin. "Ion bombardment in rf plasmas." Journal of Applied Physics 68, no. 8 (October 15, 1990): 3916–34. http://dx.doi.org/10.1063/1.346278.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
34

Bisten, M., J. Freisinger, H. Löb, P. Neumann, and A. Scharmann. "Surface modification by ion bombardment." Review of Scientific Instruments 63, no. 4 (April 1992): 2390–92. http://dx.doi.org/10.1063/1.1142937.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
35

Wiedersich, H. "Kinetic processes during ion bombardment." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 7-8 (March 1985): 1–10. http://dx.doi.org/10.1016/0168-583x(85)90521-x.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
36

Doughty, Gordon. "Ion bombardment modification of surfaces." Precision Engineering 7, no. 4 (October 1985): 233–34. http://dx.doi.org/10.1016/0141-6359(85)90009-1.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
37

MATSUO, J., M. AKIZUKI, J. NORTHBY, G. H. TAKAOKA, and I. YAMADA. "SPUTTERING WITH GAS CLUSTER-ION BEAMS." Surface Review and Letters 03, no. 01 (February 1996): 1017–21. http://dx.doi.org/10.1142/s0218625x96001820.

Повний текст джерела
Анотація:
A high-current (~100 nA) cluster-ion-beam equipment with a new mass filter has been developed to study the energetic cluster-bombardment effects on solid surfaces. A dramatic reduction of Cu concentration on silicon surfaces has been achieved by 20-keV Ar cluster (N~3000) ion bombardment. The removal rate of Cu with cluster ions is two orders of magnitude higher than that with monomer ions. A significantly higher sputtering yield is expected for cluster-ion irradiation. An energetic cluster-ion beam is quite suitable for removal of metal.
Стилі APA, Harvard, Vancouver, ISO та ін.
38

Kovách, Gergely, Gábor Pető, Albert Karacs, M. Veres, Hajnalka Csorbai, and A. Sólyom. "Thin Film Carbon Layers with Continously Changing Bonding Properties." Materials Science Forum 537-538 (February 2007): 207–14. http://dx.doi.org/10.4028/www.scientific.net/msf.537-538.207.

Повний текст джерела
Анотація:
Polycrystalline diamond and diamond-like carbon (DLC) films were deposited by microwave chemical vapor deposition (MW-CVD) and by pulsed laser deposition (PLD) respectively. Ar ion bombardment was used to change the properties of these layers. The sp2 bonds were determined directly by reflected electron energy loss spectroscopy (REELS) and further characterization was made by Raman scattering. The polycrystalline diamond showed only very slight π-π* transition at 6.5 eV, but after Ar ion bombardment strong peak was formed but definitely shifted to lower energy compared to the well known π-π* transition of graphite. The as deposited PLD carbon films showed broad peak around 5eV clearly different than the π-π* transition (6.5eV). After Ar+ ion bombardment the peak was shifted also to lower energy range (4-5eV) with a remaining part at 6.5eV. The lower energy part of the peak can be correlated to the transition of sp3 sites, while this change in peak position was not detectable after ion bombardment of the reference HOPG sample, which does not contain sp3 hybridized carbon atoms.
Стилі APA, Harvard, Vancouver, ISO та ін.
39

Sangyuenyongpipat, S., Thiraphat Vilaithong, L. D. Yu, Rattikorn Yimnirun, Pisith Singjai, and Ian G. Brown. "Development of In Situ Atomic Force Microscopy for Study of Ion Beam Interaction with Biological Cell Surface." Solid State Phenomena 107 (October 2005): 47–50. http://dx.doi.org/10.4028/www.scientific.net/ssp.107.47.

Повний текст джерела
Анотація:
The interaction between ion beam and biological cells has been studied to apply ionbeam- induced mutation to breeding of crops and gene transfer in cells. Formation of micro-craters has been observed after ion bombardment of plant cells and they are suspected to act as pathways for exogenous macromolecule transfer in the cells. A technique of in-situ atomic force microscopy (AFM) in the ion beam line is being developed to observe ion bombardment effects on cell surface morphology during ion bombardment. A commercial AFM is designed to place inside the target chamber of the bioengineering ion beam line at Chiang Mai University. In order to allow the ion beam to properly bombard the sample without the risk of damaging the scanning tip and affecting normal operation of AFM, geometrical factors have been calculated for tilting the AFM with 35 degree from the normal. In order to avoid vibrations from external sources, mechanical designs have been done for a vibration isolation system. Construction and installation of the in-situ AFM facility to the beam line have been completed and are reported in details.
Стилі APA, Harvard, Vancouver, ISO та ін.
40

Kuświk, Piotr, Alexander Gaul, Maciej Urbaniak, Marek Schmidt, Jacek Aleksiejew, Arno Ehresmann, and Feliks Stobiecki. "Tailoring Perpendicular Exchange Bias Coupling in Au/Co/NiO Systems by Ion Bombardment." Nanomaterials 8, no. 10 (October 10, 2018): 813. http://dx.doi.org/10.3390/nano8100813.

Повний текст джерела
Анотація:
Here, we systematically investigated the influence of ion bombardment with different fluences on the strength and direction of the exchange bias coupling in Au/Co/NiO systems with perpendicular magnetic anisotropy of the Co layer. We found that the direction of the exchange bias coupling can be reversed as a result of ion bombardment performed in an external magnetic field which is in the opposite direction to the magnetic field applied during film deposition. Moreover, the strength of the exchange bias coupling can be tailored by varying the ion fluence. These results show behaviors similar to the results found for systems of ferromagnetic layers with in-plane anisotropy. Our experimental work, supported by a two-energy-level model, demonstrates that exchange bias coupling can be tuned in a layered system with perpendicular magnetic anisotropy using ion bombardment.
Стилі APA, Harvard, Vancouver, ISO та ін.
41

He, Xiao-Ming, Wen-Zhi Li, and Heng-De Li. "Investigation of TiC films synthesized by low energy ion bombardment." Journal of Materials Research 9, no. 9 (September 1994): 2355–61. http://dx.doi.org/10.1557/jmr.1994.2355.

Повний текст джерела
Анотація:
Low energy bombardment of CHn+ at 100-800 eV has been used to prepare TiC film at room temperature by dual ion beam sputtering. The ion bombardment energies and densities obviously affect the metallographic morphology, the crystalline orientation, and constituent ratio of TiC films. TiC films formed under 200-600 eV CHn+ bombarding with 120-190 μA/cm2 possess much finer and compact microstructure in the compressive stress state. Its hardness is in the range of 2650-2880 kgf/mm2. The tribological tests indicate that TiC films synthesized on AISI 52100 steel by DIBS with low energy bombardment exhibit low friction coefficient and good wear resistance.
Стилі APA, Harvard, Vancouver, ISO та ін.
42

Weitzel, Karl Michael. "Bombardment Induced Ion Transport through Ion Conducting Glasses." Diffusion Foundations 6 (February 2016): 107–43. http://dx.doi.org/10.4028/www.scientific.net/df.6.107.

Повний текст джерела
Анотація:
The recently developed bombardment induced ion transport (BIIT) technique is reviewed. BIIT is based on shining an energy-selected alkali ion beam at the surface of a sample of interest. Attachment of these ions leads to the build-up of a surface potential and a surface particle density. This in turn generates the corresponding gradients which induce ion transport towards a single metal electrode connected to the backside of the sample where it is detected as a neutralization current. Two different versions of BIIT are presented, i.) the native ion BIIT and ii.) the foreign ion BIIT. The former is demonstrated to provide access to absolute ionic conductivities and activation energies, the latter leads to the generation of electrodiffusion profiles. Theoretical modelling of these concentration profiles by means of the Nernst-Planck-Poisson theory allows to deduce the concentration dependence of diffusion coefficients.
Стилі APA, Harvard, Vancouver, ISO та ін.
43

Dai, Wei, Zhixue Liu, and Melvin Lim. "Influence of Cr Ion Bombardment on the Growth of Cu Coatings Deposited by Magnetron Sputtering on ABS Substrates." Polymers 15, no. 1 (December 25, 2022): 80. http://dx.doi.org/10.3390/polym15010080.

Повний текст джерела
Анотація:
Cu coatings were deposited on acrylonitrile-butadiene-styrene copolymer (ABS) substrates by DC magnetron sputtering with Cu target. Cr ions generated by arc evaporation were used to bombard the ABS substrates before the Cu coating process. The influences of the Cr ion bombardment on the surface topography and chemical bonds of the ABS substrates and the adhesion of the Cu coatings on the ABS substrate were studied using scanning electron microscopy, Fourier transform infrared spectroscopy, and micro-Scratch Tester as a function of bias voltage and treatment duration. The results show that the Cr ion bombardment causes Cr particles to embed in the surface. The Cr particles can interlock with the Cu coatings and ABS substrate and significantly improve the coating adhesion. In addition, the Cr particles can act as the nucleation sites of the Cu coatings and facilitate the growth of columnar crystals. Increasing the duration of Cr ion bombardment increases the number of Cr particles and, thus, enhances the adhesion. However, the continuous bombardment results in the degeneration of the ABS surface, causing the formation of the coarse columnar structure of the Cu coatings. Increasing the bias voltage can increase the energy of the Cr particles without causing degeneration of the ABS. The Cu coating deposited on the ABS substrate treated by Cr ion with high-bias voltage and short duration shows a dense and smooth growth structure. In contrast, the bombardment of the Cr ions carried out at high-bias voltage induces the formation of an interfacial layer (amorphous carbon-rich phase) in the ABS surface, which decreases the coating adhesion. It is believed that Cu coatings with strong adhesion and dense structures could be acquired on ABS substrates by optimizing the bias voltage and duration of the Cr ion bombardment pre-treatment.
Стилі APA, Harvard, Vancouver, ISO та ін.
44

Ugli, Sodikjanov Jakhongirbek Shukhratbek. "CHANGES IN THE SURFACE OF CdS BOMBARDED BY O+ IONS." American Journal of Engineering and Technology 5, no. 11 (November 1, 2023): 25–29. http://dx.doi.org/10.37547/tajet/volume05issue11-05.

Повний текст джерела
Анотація:
In this study, we investigate the structural and chemical changes occurring on the surface of cadmium sulfide (CdS) when subjected to bombardment with oxygen ions (O+). CdS is a semiconductor material with variousapplications in optoelectronic devices, and understanding its surface modifications under ion bombardment is crucial for improving its performance. Using a combination of analytical techniques, including X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDS), we explore the alterations induced by O+ ion bombardment. Our findings reveal significant changes in the surface composition and morphology of CdS, shedding light on potential applications in semiconductor technology.
Стилі APA, Harvard, Vancouver, ISO та ін.
45

Pan, J. S., C. H. A. Huan, A. T. S. Wee, H. S. Tan, and K. L. Tan. "Auger electron spectroscopy and x-ray photoelectron spectroscopy analysis of angle of incidence effects of ion beam nitridation of GaAs." Journal of Materials Research 13, no. 7 (July 1998): 1799–807. http://dx.doi.org/10.1557/jmr.1998.0254.

Повний текст джерела
Анотація:
Ion beam nitridation (IBN) of GaAs at room temperature was studied as a function of N2+ ion incident angle at ion energy of 10 keV. The ion beam bombardment surface area of GaAs was characterized in situ by both Auger electron spectroscopy (AES) and small spot-size x-ray photoelectron spectroscopy (XPS). Thin GaN reaction layers are formed at all N2+ ion incident angles, whereas the formation of As–N bonds has not been found. However, the degree of nitridation of Ga decreases with increasing incident angle. The observed angular dependence of the N incorporation can be explained in terms of sputtering yield, indicating that the growth kinetics can be described as a dynamic process comprising the accumulation of N and sputter removal of the surface layer. N2+ ion bombardment causes the depletion of As from the surface region because of the preferential sputtering of As from GaAs. The preferential sputtering of As reduces with increasing N2+ ion incident angle. The angular dependent behavior of preferential sputtering of As by 10 keV N2+ ions can be attributed to the angular dependence of GaN surface layer formation.
Стилі APA, Harvard, Vancouver, ISO та ін.
46

Gupta, B. K., Jacques Chevallier, and Bharat Bhushan. "Tribology of Ion Bombarded Silicon for Micromechanical Applications." Journal of Tribology 115, no. 3 (July 1, 1993): 392–99. http://dx.doi.org/10.1115/1.2921649.

Повний текст джерела
Анотація:
Silicon is used in the fabrication of microelectromechanical systems (MEMS). The friction and wear characteristics are of major design concern for any mechanical device requiring relative motion. In the present investigations we have studied the influence of ion bombardment on the microstructure, crystallinity, composition, microhardness, friction, and wear behavior. The ion bombardment modifies the elastic/plastic deformation characteristics and crack nucleation that occurs during the indentation. C+ bombarded monocrystalline and polycrystalline Si exhibit very low coefficient of friction (0.025–0.05) and wear factors (10−7 mm3/N m) while slid against 52100 steel and alumina in dry and moist air and dry nitrogen atmospheres. Ion bombardment resulted in the formation of an amorphized layer that consists of SiC, C, and Si. We have shown that the improvements in friction and wear are because of the formation of SiC and not because of amorphization alone.
Стилі APA, Harvard, Vancouver, ISO та ін.
47

Li, Yu Lan, Xiao Dong Peng, and Wei Dong Xie. "Study on Al Alloy Surfaces Treated by Ion Beams." Materials Science Forum 561-565 (October 2007): 211–14. http://dx.doi.org/10.4028/www.scientific.net/msf.561-565.211.

Повний текст джерела
Анотація:
Plasma-enhanced ion beams are used for the surface modification of 2024 Al and 7075 Al alloy samples. The morphology of the treated surface of the samples is examined. The corrosion resistance and bending fatigue properties were measured on the treated and untreated samples. The effects of ion beam parameters are discussed. It is indicated that during the ion bombardment, craters are formed and surface melting is produced on the treated surfaces. The effects of ion beam bombardment are limited to the surface layer of samples. With the ion beam energies used in this study, improved corrosion resistance was obtained from the treated surfaces of the samples.
Стилі APA, Harvard, Vancouver, ISO та ін.
48

Kim, Jieun, Sahar Saremi, Megha Acharya, Gabriel Velarde, Eric Parsonnet, Patrick Donahue, Alexander Qualls, David Garcia, and Lane W. Martin. "Ultrahigh capacitive energy density in ion-bombarded relaxor ferroelectric films." Science 369, no. 6499 (July 2, 2020): 81–84. http://dx.doi.org/10.1126/science.abb0631.

Повний текст джерела
Анотація:
Dielectric capacitors can store and release electric energy at ultrafast rates and are extensively studied for applications in electronics and electric power systems. Among various candidates, thin films based on relaxor ferroelectrics, a special kind of ferroelectric with nanometer-sized domains, have attracted special attention because of their high energy densities and efficiencies. We show that high-energy ion bombardment improves the energy storage performance of relaxor ferroelectric thin films. Intrinsic point defects created by ion bombardment reduce leakage, delay low-field polarization saturation, enhance high-field polarizability, and improve breakdown strength. We demonstrate energy storage densities as high as ~133 joules per cubic centimeter with efficiencies exceeding 75%. Deterministic control of defects by means of postsynthesis processing methods such as ion bombardment can be used to overcome the trade-off between high polarizability and breakdown strength.
Стилі APA, Harvard, Vancouver, ISO та ін.
49

Lee, Min-Ku, Hee-Soo Kang, Whung-Whoe Kim, Joung-Soo Kim, and Won-Jong Lee. "Characteristics of TiN film deposited on stellite using reactive magnetron sputter ion plating." Journal of Materials Research 12, no. 9 (September 1997): 2393–400. http://dx.doi.org/10.1557/jmr.1997.0317.

Повний текст джерела
Анотація:
TiN films were deposited onto stellite 6B alloy (Co base) by the reactive magnetron sputter ion plating. As the substrate bias increases, TiN film changes from columnar structure to dense structure with great hardness and smooth surface due to densification and resputtering by ion bombardment. The content of oxygen and carbon impurities in the TiN film decreases greatly when the substrate bias is applied. The preferred orientation of the TiN films changes from (200) to (111) with decreasing N2/Ar ratio and from (200) to (111) and then (220) with increasing the substrate bias. The change of the preferred orientation is discussed in terms of surface energy and strain energy which are related to the impurity contents and the ion bombardment damage. The hardness of the TiN film increases with increasing compressive stress generated in the film by virtue of ion bombardment. It becomes as high as up to 3500 kgf/mm2 when an appropriate substrate bias is applied.
Стилі APA, Harvard, Vancouver, ISO та ін.
50

Aassime, A., M. Duquennoy, F. Hamouda, T. Kadi, F. Mahut, and M. Ouaftouh. "Elaboration and characterization of porous ultrathin gold films grown by ion beam assisted deposition." Journal of Vacuum Science & Technology A 40, no. 5 (September 2022): 053404. http://dx.doi.org/10.1116/6.0002050.

Повний текст джерела
Анотація:
The growth of ultrathin gold layers on a silicon substrate is performed with an unconventional ion beam assisted deposition. In this setup, evaporated gold flow and ion beam flux are perpendicular. 5 and 10 nm thick gold were deposited on tilted samples with the assistance of an argon ion beam at energies of 70 and 150 eV. We explored the evolution of surface morphology, mainly roughness and porosity, with ion bombardment for two gold thicknesses. We have also extrapolated Young’s modulus of these ultrathin layers by means of high-frequency acoustic measurements in the 90–260 MHz range. We also investigated the evolution of wettability of our structures with ion bombardment as well as their electrical and optical responses.
Стилі APA, Harvard, Vancouver, ISO та ін.
Також вас можуть зацікавити добірки на тему "Ion bombardment" для інших типів джерел:
Дисертації Книги
Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!

До бібліографії