Увійти

Готові списки джерел за темами / Ion beam induced luminescence

Зміст

Статті в журналах
Дисертації
Книги
Частини книг
Тези доповідей конференцій
Звіти організацій

Добірка наукової літератури з теми "Ion beam induced luminescence"

Автор: Grafiati

Опубліковано: 10 березня 2023

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "Ion beam induced luminescence".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Статті в журналах з теми "Ion beam induced luminescence"

1

Malmqvist, K. G. "Ion Beam Induced Luminescence." Solid State Phenomena 63-64 (December 1998): 147–50. http://dx.doi.org/10.4028/www.scientific.net/ssp.63-64.147.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

2

Huddle, James R., Patrick G. Grant, Alexander R. Ludington, and Robert L. Foster. "Ion beam-induced luminescence." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 261, no. 1-2 (August 2007): 475–76. http://dx.doi.org/10.1016/j.nimb.2007.04.025.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

3

Brooks, R. J., D. E. Hole, and P. D. Townsend. "Ion beam induced luminescence of materials." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 190, no. 1-4 (May 2002): 136–40. http://dx.doi.org/10.1016/s0168-583x(01)01226-5.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

4

Ryuto, H., F. Musumeci, A. Sakata, M. Takeuchi, and G. H. Takaoka. "Spectrometer for cluster ion beam induced luminescence." Review of Scientific Instruments 86, no. 2 (February 2015): 023106. http://dx.doi.org/10.1063/1.4907540.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

5

Brooks, R. J., D. E. Hole, P. D. Townsend, Z. Wu, J. Gonzalo, A. Suarez-Garcia, and P. Knott. "Ion beam induced luminescence of thin films." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 190, no. 1-4 (May 2002): 709–13. http://dx.doi.org/10.1016/s0168-583x(01)01256-3.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

6

Sullivan, P. A., and R. A. Baragiola. "Ion beam induced luminescence in natural diamond." Journal of Applied Physics 76, no. 8 (October 15, 1994): 4847–52. http://dx.doi.org/10.1063/1.357258.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

7

Haycock, P. W., and P. D. Townsend. "Ion beam induced luminescence spectra of LiNbO3." Radiation Effects 98, no. 1-4 (September 1986): 243–48. http://dx.doi.org/10.1080/00337578608206115.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

8

KATO, Daiji, Hiroyuki A. SAKAUE, Izumi MURAKAMI, Teruya TANAKA, Takeo MUROGA, and Akio SAGARA. "Ion-Beam Induced Luminescence and Damage of Er2O3." Plasma and Fusion Research 7 (2012): 2405043. http://dx.doi.org/10.1585/pfr.7.2405043.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

9

Iwaki, Masaya, Makoto Kumagai, and Keiko Aono. "Ion beam induced luminescence of Tb-implanted sapphire." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 127-128 (May 1997): 488–91. http://dx.doi.org/10.1016/s0168-583x(96)00976-7.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

10

Rossi, P., D. K. Brice, C. H. Seager, F. D. McDaniel, G. Vizkelethy, and B. L. Doyle. "Ion beam induced luminescence of doped yttrium compounds." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 219-220 (June 2004): 327–32. http://dx.doi.org/10.1016/j.nimb.2004.01.078.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Більше джерел

Дисертації з теми "Ion beam induced luminescence"

1

Brooks, Robert. "Ion beam induced luminescence of materials." Thesis, University of Sussex, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.391861.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

2

Haycock, P. W. "Ion beam induced luminescence and polarisation reversal in ferroelectric crystals." Thesis, University of Sussex, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.373155.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

3

Dubner, Andrew D. (Andrew David). "Mechanism of ion beam induced deposition." Thesis, Massachusetts Institute of Technology, 1990. http://hdl.handle.net/1721.1/13637.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

4

Della, Ratta Anthony D. (Anthony David). "Focused ion beam induced deposition of copper." Thesis, Massachusetts Institute of Technology, 1993. http://hdl.handle.net/1721.1/12418.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

5

Sukirno. "Ion beam induced interface motion and impurity relocation." Thesis, University of Salford, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.293846.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

6

Funatsu, Jun. "Laser-assisted focused-ion-beam-induced deposition of copper." Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/32617.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

7

Zhou, Hua. "Ion Beam Erosion-Induced Self-Organized Nanostructures On Sapphire." ScholarWorks @ UVM, 2007. http://scholarworks.uvm.edu/graddis/246.

Повний текст джерела

Анотація:

Ion beam erosion of solid surfaces is known to produce a variety of surface morpholo- gies, such as pits, mounds or crests. Very often self-organized patterns composed of highly correlated arrays of dots or ripples at sub-micrometer and nanometer length scale could be obtained. Ion beam erosion patterning have demonstrated the poten- tial to tailor related surface properties for optoelectronic and spintronic applications, such as modulated photoemission induced by quantum con¯nement of nanodots and magnetic anisotropy induced by nanoripples. On the other hand, one considerable practical importance and e®ect of ion beam erosion is that of surface smoothing of nanometer features, during etching or ¯lm deposition coincident with energetic species. In my dissertation, systematic investigations of ripple formation and smooth- ing during low energy Ar+ ion erosion of sapphire surfaces using synchrotron grazing incidence small angle x-ray scattering and atomic force microscopy are performed. It is found in the pattern formation that the wavelength of ripples can be varied over a remarkably wide range by changing the ion incidence angle. The ion induced viscous °ow smoothing mechanism explains the general trends of the ripple wavelength at low temperature and incidence angles larger than 30±. The behavior at high temper- atures suggests relaxation by surface di®usion. However, strong smoothing is inferred from the observed ripple wavelength near normal incidence, which is not consistent with either surface di®usion or viscous °ow relaxation. Furthermore, a real-time x- ray scattering experiment is presented showing that ion smoothing of a pre-patterned surface near normal incidence is consistent with the e®ect of a collision-induced lat- eral current. Quantitative agreement is obtained using ion-collision simulations to compute the magnitude of the surface current. The results lead to predictions for the surface morphology phase diagram as a function of ion beam energy and incidence angle that substantially agree with experimental observations. The ion-induced lat- eral current smoothing model is applicable to many surfaces that become amorphous but maintain the stoichiometry of bulk materials during ion bombardment.

Стилі APA, Harvard, Vancouver, ISO та ін.

8

Roshchupkina, Olga. "Ion beam induced structural modifications in nano-crystalline permalloy thin films." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2013. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-114158.

Повний текст джерела

Анотація:

In the last years, there is a rise of interest in investigation and fabrication of nanometer sized magnetic structures due to their various applications (e.g. for data storage or micro sensors). Over the last several decades ion beam implantation became an important tool for the modification of materials and in particular for the manipulation of magnetic properties. Nanopatterning and implantation can be done simultaneously using focused-ion beam (FIB) techniques. FIB implantation and standard ion implantation differ in their beam current densities by 7 orders of magnitude. This difference can strongly influence the structural and magnetic properties, e.g. due to a rise of the local temperature in the sample during ion implantation. In previous investigations both types of implantation techniques were studied separately. The aim of the current research was to compare both implantation techniques in terms of structural changes and changes in magnetic properties using the same material system. Moreover, to separate any possible annealing effects from implantation ones, the influence of temperature on the structural and magnetic properties were additionally investigated. For the current study a model material system which is widely used for industrial applications was chosen: a 50 nm thick non-ordered nano-crystalline permalloy (Ni81Fe19) film grown on a SiO2 buffer layer based onto a (100)-oriented Si substrate. The permalloy films were implanted with a 30 keV Ga+ ion beam; and also a series of as-deposited permalloy films were annealed in an ultra-high vacuum (UHV) chamber. Several investigation techniques were applied to study the film structure and composition, and were mostly based on non-destructive X-ray investigation techniques, which are the primary focus of this work. Besides X-ray diffraction (XRD), providing the long-range order crystal structural information, extended X-ray absorption fine structure (EXAFS) measurements to probe the local structure were performed. Moreover, the film thickness, surface roughness, and interface roughness were obtained from the X-ray reflectivity (XRR) measurements. Additionally cross-sectional transmission electron microscope (XTEM) imaging was used for local structural characterizations. The Ga depth distribution of the samples implanted with a standard ion implanter was measured by the use of Auger electron spectroscopy (AES) and Rutherford backscattering (RBS), and was compared with theoretical TRIDYN calculation. The magnetic properties were characterized via polar magneto-optic Kerr effect (MOKE) measurements at room temperature. It was shown that both implantation techniques lead to a further material crystallization of the partially amorphous permalloy material (i.e. to an increase of the amount of the crystalline material), to a crystallite growth and to a material texturing towards the (111) direction. For low ion fluences a strong increase of the amount of the crystalline material was observed, while for high ion fluences this rise is much weaker. At low ion fluences XTEM images show small isolated crystallites, while for high ones the crystallites start to grow through the entire film. The EXAFS analysis shows that both Ni and Ga atom surroundings have a perfect near-order coordination corresponding to an fcc symmetry. The lattice parameter for both implantation techniques increases with increasing ion fluence according to the same linear law. The lattice parameters obtained from the EXAFS measurements for both implantation types are in a good agreement with the results obtained from the XRD measurements. Grazing incidence XRD (GIXRD) measurements of the samples implanted with a standard ion implanter show an increasing value of microstrain with increasing ion fluence (i.e. the lattice parameter variation is increasing with fluence). Both types of implantation result in an increase of the surface and the interface roughness and demonstrate a decrease of the saturation polarization with increasing ion fluence. From the obtained results it follows that FIB and standard ion implantation influence structure and magnetic properties in a similar way: both lead to a material crystallization, crystallite growth, texturing and decrease of the saturation polarization with increasing ion fluence. A further crystallization of the highly defective nano-crystalline material can be simply understood as a result of exchange processes induced by the energy transferred to the system during the ion implantation. The decrease of the saturation polarization of the implanted samples is mainly attributed to the simple presence of the Ga atoms on the lattice sites of the permalloy film itself. For the annealed samples more complex results were found. The corresponding results can be separated into two temperature regimes: into low (≤400°C) and high (>400°C) temperatures. Similar to the implanted samples, annealing results in a material crystallization with large crystallites growing through the entire film and in a material texturing towards the (111) direction. The EXAFS analysis shows a perfect near-order coordination corresponding to an fcc symmetry. The lattice parameter of the annealed samples slightly decreases at low annealing temperatures, reaches its minimum at about ~400°C and slightly rises at higher ones. From the GIXRD measurements it can be observed that the permalloy material at temperatures above >400°C reaches its strain-free state. On the other hand, the film roughness increases with increasing annealing temperature and a de-wetting of the film is observed at high annealing temperatures. Regardless of the material crystallization and texturing, the samples annealed at low temperatures demonstrate no change in saturation polarization, while at high temperatures a rise by approximately ~15% at 800°C was observed. The rise of the saturation polarization at high annealing temperatures is attributed to the de-wetting effect.

Стилі APA, Harvard, Vancouver, ISO та ін.

9

Müller, Georg Alexander. "Ion-beam induced changes of magnetic and structural properties in thin Fe films." [S.l.] : [s.n.], 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=971021570.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

10

Erola, Marja. "Ion beam and annealing induced effects in solid materials detected by nuclear methods." Hki : Societas scientiarum Fennica, 1988. http://catalog.hathitrust.org/api/volumes/oclc/58508563.html.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Більше джерел

Книги з теми "Ion beam induced luminescence"

1

Kumar, Parmod, Jitendra Pal Singh, Vinod Kumar, and K. Asokan. Ion Beam Induced Defects and Their Effects in Oxide Materials. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-93862-8.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

2

Córdoba Castillo, Rosa. Functional Nanostructures Fabricated by Focused Electron/Ion Beam Induced Deposition. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-02081-5.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

3

Sukirno. Ion beam induced interface motion and impurity relocation in amorphous layers on SI. Salford: University of Salford, 1991.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

4

Symposium I on New Trends in Ion Beam Processing of Materials (1996 Strasbourg, France). New trends in ion beam processing of materials and beam induced nanometric phenomena: Proceedings of Symposium I on New Trends in Ion Beam Processing of Materials, and proceedings of Symposium K on Nanometric Phenomena Induced by Laser, Ion, and Cluster Beams of the 1996 E-MRS Spring Conference, Strasbourg, France, June 4-7, 1996. Edited by Priolo F and Symposium K on Nanometric Phenomena Induced by Laser, Ion, and Cluster Beams (1996 : Strasbourg, France). Amsterdam: Elsevier, 1997.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

5

Priolo, F., E. E. B. Campbell, A. Nylandsted Larsen, J. K. N. Lindner, and J. M. Poate. New Trends in Ion Beam Processing of Materials and Beam Induced Nanometric Phenomena. Elsevier Science & Technology Books, 1997.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

6

Castillo, Rosa Córdoba. Functional Nanostructures Fabricated by Focused Electron/Ion Beam Induced Deposition. Springer, 2013.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

7

Castillo, Rosa Córdoba Córdoba. Functional Nanostructures Fabricated by Focused Electron/Ion Beam Induced Deposition. Springer, 2016.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

8

Ion Beam Induced Defects and Their Effects in Oxide Materials. Springer International Publishing AG, 2022.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

9

Castillo, Rosa Córdoba. Functional Nanostructures Fabricated by Focused Electron/Ion Beam Induced Deposition. Springer London, Limited, 2013.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Частини книг з теми "Ion beam induced luminescence"

1

Bachiller Perea, Diana. "Ion Beam Induced Luminescence in MgO." In Springer Theses, 151–67. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-00407-1_10.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

2

Bachiller Perea, Diana. "General Features of the Ion Beam Induced Luminescence in Amorphous Silica." In Springer Theses, 85–98. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-00407-1_6.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

3

Rauschenbach, Bernd. "Ion Beam-Induced Damages." In Low-Energy Ion Irradiation of Materials, 71–122. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-97277-6_4.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

4

Townsend, Peter. "Box 7: Diagnostic Ion Beam Luminescence." In Ion Beams in Nanoscience and Technology, 211–17. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-00623-4_16.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

5

Melngailis, J., A. D. Dubner, J. S. Ro, G. M. Shedd, H. Lezec, and C. V. Thompson. "Focused Ion Beam Induced Deposition." In Emerging Technologies for In Situ Processing, 153–61. Dordrecht: Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-009-1409-4_17.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

6

Tanaka, Atsushi. "Ion Beam-Induced Mutation in Plants." In An Advanced Course in Nuclear Engineering, 163–84. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-7350-2_13.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

7

Miotello, A., D. C. Kothari, and L. Guzman. "Ion Beam Induced Ni-Ag Mixing." In Interaction of Charged Particles with Solids and Surfaces, 687–91. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4684-8026-9_44.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

8

Moon, Myoung-Woon, Chansoo Kim, and Ashkan Vaziri. "Ion Beam-Induced Self-Assembled Wrinkles." In Mechanical Self-Assembly, 47–67. New York, NY: Springer New York, 2012. http://dx.doi.org/10.1007/978-1-4614-4562-3_4.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

9

Timilsina, Rajendra, and Philip D. Rack. "Monte Carlo Simulations of Focused Ion Beam Induced Processing." In Helium Ion Microscopy, 89–118. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-41990-9_4.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

10

Anttila, A. "Ion-Beam Induced Diamond-Like Carbon Coatings." In Structure-Property Relationships in Surface-Modified Ceramics, 455–75. Dordrecht: Springer Netherlands, 1989. http://dx.doi.org/10.1007/978-94-009-0983-0_29.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Тези доповідей конференцій з теми "Ion beam induced luminescence"

1

Baryshnikov, V. I., V. L. Paperny, and I. V. Shipaev. "Luminescence of Ti:Al2O3-media induced by pinched “overaccelerated” electron-Ti-ion beams." In XVI INTERNATIONAL CONFERENCE ON LUMINESCENCE AND LASER PHYSICS DEVOTED TO THE 100TH ANNIVERSARY OF IRKUTSK STATE UNIVERSITY. Author(s), 2019. http://dx.doi.org/10.1063/1.5089843.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

2

Vakhtin, Andrei B., Kristen A. Peterson, Daniel J. Kane, Eric H. Jordan, Geoffrey Hansen, and Matthew Teicholz. "Combination of Fourier-Domain Optical Coherence Tomography and Photo-Stimulated Luminescence Piezo-Spectroscopy as an NDE Tool for Thermal Barrier Coatings." In ASME Turbo Expo 2007: Power for Land, Sea, and Air. ASMEDC, 2007. http://dx.doi.org/10.1115/gt2007-27557.

Повний текст джерела

Анотація:

A combination of two optical methods — Fourier-domain optical coherence tomography (FD-OCT) and photo-stimulated luminescence piezo-spectroscopy (PLPS) is used as a non-destructive evaluation (NDE) tool for thermal barrier coatings (TBC). This research is focused on NDE of electron beam physical vapor deposition (EB-PVD) TBC’s. FD-OCT is an interferometric technique, which uses spectrally broadband visible or infrared light to obtain spectrally resolved interferograms of the light that is back-scattered from subsurface structures and defects (e.g., interfaces, cracks, voids) in optically translucent material. When the Fourier transform is applied to the interferogram, a depth-resolved image of the back-scattering sites is obtained. FD-OCT is shown to be a useful NDE tool that can profile the top coat-metal substrate interface and measure the top coat thickness. Also, it has the potential of assessing microcracking and spallation damage. PLPS provides quantitative information on stress in the thermally grown oxide (TGO) by measuring the spectral shifts in the laser-induced luminescence spectra of the Cr3+ ions present in the TGO. When combined, the PLPS and FD-OCT methods can provide a set of important input parameters for the TBC remaining life predicting model. Ultimately they will collect spatially resolved data on matching spatial domains. The two optical methods are applied to thermally cycled EB-PVD TBC samples. The experimental results are compared to destructive inspection data.

Стилі APA, Harvard, Vancouver, ISO та ін.

3

Miller, N. C., and K. P. Rispoli. "Electron Beam Induced Luminescence." In ISTFA 2002. ASM International, 2002. http://dx.doi.org/10.31399/asm.cp.istfa2002p0435.

Повний текст джерела

Анотація:

Abstract A method to detect defects affecting laser diode radiation has been devised by imaging the induced luminescence resulting from a scanning electron beam. Electron Beam Induced Luminescence (EBIL) involves imaging the current from a sensor diode as the SEM electron beam scans across the laser diode surface. Defects preventing laser diode radiation will be shown as contrast variations in the EBIL image. This technique is similar to electron beam induced current (EBIC), reference 1, in which the electron beam provides the capability for measuring subsurface electrical and physical parameters that effect device electrical performance. However in the case of EBIL, laser diode radiation is utilized as the imaging parameter providing direct correlation between the semiconductor active layer and the resultant diode luminescence output. Alternative techniques such as Cathode Luminescence (CL), reference 2 and 5, in the scanning electron microscope (SEM) have been used for examination of semiconductor laser diodes for defects preventing radiation. However CL SEM analysis requires costly accessories, including at least an ellipsoidal mirror and a cooled photomultiplier tube sensitive to the particular laser diode output frequency. In addition the laser diode must be at the focal point of an ellipsoidal mirror, making CL SEM examination of a packaged laser diode difficult or impossible. This paper will describe the EBIL technique using several test diodes to demonstrate the ability of EBIL to image diode luminescence and defects affecting luminescent output. Deprocessing of the laser diode top electrode and EBIL operating parameters will be discussed.

Стилі APA, Harvard, Vancouver, ISO та ін.

4

Dennison, J. R., Amberly Evans, Gregory Wilson, Justin Dekany, Charles W. Bowers, and Robert Meloy. "Electron beam induced luminescence of SiO2 optical coatings." In 2012 IEEE Conference on Electrical Insulation and Dielectric Phenomena - (CEIDP 2012). IEEE, 2012. http://dx.doi.org/10.1109/ceidp.2012.6378824.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

5

Nagata, Shinji, Kentaro Toh, Bun Tsuchiya, N. Ohtsu, and Tatsuo Shikama. "Ion-induced luminescence of silica glasses and optical fibers." In Optical Science and Technology, SPIE's 48th Annual Meeting, edited by F. Patrick Doty, H. Bradford Barber, and Hans Roehrig. SPIE, 2004. http://dx.doi.org/10.1117/12.509823.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

6

Kinney, Edward R. "Beam-induced target depolarization." In Polarized ion sources and polarized gas targets. AIP, 1993. http://dx.doi.org/10.1063/1.45137.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

7

Choi, Minho, Seongmoon Jun, Kie Young Woo, Hyun Gyu Song, Hwanseop Yeo, Sunghan Choi, Doyoun Park, Chung-Hyun Park, and Yong-Hoon Cho. "Nanoscale luminescence selection of quantum dot using focused-ion-beam." In Photonic and Phononic Properties of Engineered Nanostructures XII, edited by Ali Adibi, Shawn-Yu Lin, and Axel Scherer. SPIE, 2022. http://dx.doi.org/10.1117/12.2607510.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

8

Stewart, A. F., Samuel M. Lu, Mohammad M. Tehrani, and C. Volk. "Ion beam sputtering of optical coatings." In Laser-Induced Damage in Optical Materials: 1993, edited by Harold E. Bennett, Lloyd L. Chase, Arthur H. Guenther, Brian E. Newnam, and M. J. Soileau. SPIE, 1994. http://dx.doi.org/10.1117/12.180878.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

9

Melngailis, John. "Focused ion beam induced deposition: a review." In Micro - DL tentative, edited by Martin C. Peckerar. SPIE, 1991. http://dx.doi.org/10.1117/12.47341.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

10

Wanzenboeck, H. D. "Ion beam induced deposition of dielectric nanostructures." In Eighth International Conference on Dielectric Materials, Measurements and Applications. IEE, 2000. http://dx.doi.org/10.1049/cp:20000557.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Звіти організацій з теми "Ion beam induced luminescence"

1

SEXTON, FREDERICK W., DAVID S. WALSH, BARNEY L. DOYLE, and PAUL E. DODD. Time resolved ion beam induced charge collection. Office of Scientific and Technical Information (OSTI), April 2000. http://dx.doi.org/10.2172/754393.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

2

Tsang, T., S. Bellavia, R. Connolly, D. Gassner, Y. Makdisi, T. Russo, P. Thieberger, D. Trbojevic, and A. Zelenski. A new luminescence beam profile monitor for intense proton and heavy ion beams. Office of Scientific and Technical Information (OSTI), October 2008. http://dx.doi.org/10.2172/945353.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

3

Tsang T., D. Trbojevic, S. Bellavia, R. Connolly, D. Gassner, Y. Makdisi, T. Russo, P. Thieberger, and A. Zelenski. A New Luminescence Beam Profile Monitor for Intense Proton and Heavy Ion Beams. Office of Scientific and Technical Information (OSTI), October 2008. http://dx.doi.org/10.2172/1061920.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

4

Qian, Y., D. Ila, K. X. He, M. Curley, D. B. Poker, and L. A. Boatner. Ion beam-induced changes in optical properties of MgO. Office of Scientific and Technical Information (OSTI), December 1995. http://dx.doi.org/10.2172/219356.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

5

Weber, W. J., and L. M. Wang. Temperature dependence of ion-beam-induced amorphization in {beta}-SiC. Office of Scientific and Technical Information (OSTI), February 1995. http://dx.doi.org/10.2172/10119438.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

6

N.N. Gorelenkov and S.S. Medley. Modeling of Low Frequency MHD Induced Beam Ion Transport In NSTX. Office of Scientific and Technical Information (OSTI), July 2004. http://dx.doi.org/10.2172/828500.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

7

Schoene, H., D. S. Walsh, F. W. Sexton, B. L. Doyle, J. F. Aurand, P. E. Dodd, R. S. Flores, and N. Wing. Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics. Office of Scientific and Technical Information (OSTI), August 1998. http://dx.doi.org/10.2172/663234.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

8

Vizkelethy, Gyorgy. Simulation of ion beam induced current in radiation detectors and microelectronic devices. Office of Scientific and Technical Information (OSTI), October 2009. http://dx.doi.org/10.2172/974877.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!