Статті в журналах з теми "InxGa1-xN"
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Jeong, Myoungho, Hyo Sung Lee, Seok Kyu Han, Eun-Jung-Shin, Soon-Ku Hong, Jeong Yong Lee, Yun Chang Park, Jun-Mo Yang, and Takafumi Yao. "Microstructural Characterization of High Indium-Composition InXGa1−XN Epilayers Grown on c-Plane Sapphire Substrates." Microscopy and Microanalysis 19, S5 (August 2013): 145–48. http://dx.doi.org/10.1017/s143192761301252x.
Повний текст джерелаManzoor, Habib Ullah, Aik Kwan Tan, Sha Shiong Ng, and Zainuriah Hassan. "Carrier Density and Thickness Optimization of InxGa1-xN Layer by Scaps-1D Simulation for High Efficiency III-V Solar CelL." Sains Malaysiana 51, no. 5 (May 31, 2022): 1567–76. http://dx.doi.org/10.17576/jsm-2022-5105-24.
Повний текст джерелаSong, Juan, Zijiang Luo, Xuefei Liu, Ershi Li, Chong Jiang, Zechen Huang, Jiawei Li, Xiang Guo, Zhao Ding, and Jihong Wang. "The Study on Structural and Photoelectric Properties of Zincblende InGaN via First Principles Calculation." Crystals 10, no. 12 (December 19, 2020): 1159. http://dx.doi.org/10.3390/cryst10121159.
Повний текст джерелаLin, Yu-Chung, Ikai Lo, Cheng-Da Tsai, Ying-Chieh Wang, Hui-Chun Huang, Chu-An Li, Mitch M. C. Chou, and Ting-Chang Chang. "Optimization of Ternary InxGa1-xN Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs." Nanomaterials 13, no. 13 (June 23, 2023): 1922. http://dx.doi.org/10.3390/nano13131922.
Повний текст джерелаHan, Li Jun, Bin Feng Ding, and Guo Man Lin. "The Optical and Structural Properties of InxGa1-XN/GaN Multiple Quantum Wells by Metal Organic Chemical Vapor Deposition." Advanced Materials Research 535-537 (June 2012): 1270–74. http://dx.doi.org/10.4028/www.scientific.net/amr.535-537.1270.
Повний текст джерелаWu, Ren Tu Ya, and Qi Zhao Feng. "Polaronic Effects in Wurtzite InxGa1-xN/GaN Parabolic Quantum Well." Advanced Materials Research 629 (December 2012): 145–51. http://dx.doi.org/10.4028/www.scientific.net/amr.629.145.
Повний текст джерелаKaysir, Md Rejvi, and Rafiqul Islam. "Theoretical Charge Control Investigations in InN-Based Quantum Well Double Heterostructure High Electron Mobility Transistors (QW-DHEMTs)." Advanced Materials Research 403-408 (November 2011): 52–58. http://dx.doi.org/10.4028/www.scientific.net/amr.403-408.52.
Повний текст джерелаTsai, ChengDa, Ikai Lo, YingChieh Wang, ChenChi Yang, HongYi Yang, HueiJyun Shih, HuiChun Huang, Mitch M. C. Chou, Louie Huang, and Binson Tseng. "Indium-Incorporation with InxGa1-xN Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy." Crystals 9, no. 6 (June 14, 2019): 308. http://dx.doi.org/10.3390/cryst9060308.
Повний текст джерелаHumayun, M. A., M. A. Rashid, F. Malek, A. Yusof, F. S. Abdullah, and N. B. Ahmad. "A Comparative Study of Confined Carrier Concentration of Laser Using Quantum well and Quantum Dot in Active Layer." Advanced Materials Research 701 (May 2013): 188–91. http://dx.doi.org/10.4028/www.scientific.net/amr.701.188.
Повний текст джерелаHu, Yan-Ling, Yuqin Zhu, Huayu Ji, Qingyuan Luo, Ao Fu, Xin Wang, Guiyan Xu, et al. "Fabrication of InxGa1−xN Nanowires on Tantalum Substrates by Vapor-Liquid-Solid Chemical Vapor Deposition." Nanomaterials 8, no. 12 (November 29, 2018): 990. http://dx.doi.org/10.3390/nano8120990.
Повний текст джерелаShih, Huei-Jyun, Ikai Lo, Ying-Chieh Wang, Cheng-Da Tsai, Yu-Chung Lin, Yi-Ying Lu, and Hui-Chun Huang. "Growth and Characterization of GaN/InxGa1−xN/InyAl1−yN Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy." Crystals 12, no. 3 (March 17, 2022): 417. http://dx.doi.org/10.3390/cryst12030417.
Повний текст джерелаJun, Yong-Ki, and Sang-Jo Chung. "Optical properties of InxGa1-xN/GaN epilayers." Korean Journal of Materials Research 12, no. 1 (January 1, 2002): 54–57. http://dx.doi.org/10.3740/mrsk.2002.12.1.054.
Повний текст джерелаBiswas, Dipankar, Tapas Das, Sanjib Kabi, and Subindu Kumar. "Conspicuous Presence of Higher Order Transitions in the Photoluminescence of InxGa1-xN/GaN Quantum Wells." Advanced Materials Research 31 (November 2007): 62–64. http://dx.doi.org/10.4028/www.scientific.net/amr.31.62.
Повний текст джерелаB. Kashyout, Fathy, Gad, Badr, and A. Bishara. "Synthesis of Nanostructure InxGa1-xN Bulk Alloys and Thin Films for LED Devices." Photonics 6, no. 2 (April 24, 2019): 44. http://dx.doi.org/10.3390/photonics6020044.
Повний текст джерелаVartuli, C. B. "Implant isolation of InxAl1−xN and InxGa1−xN." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 13, no. 6 (November 1995): 2293. http://dx.doi.org/10.1116/1.588065.
Повний текст джерелаZhao, Xiaofang, Tao Wang, Bowen Sheng, Xiantong Zheng, Li Chen, Haihui Liu, Chao He, Jun Xu, Rui Zhu, and Xinqiang Wang. "Cathodoluminescence Spectroscopy in Graded InxGa1−xN." Nanomaterials 12, no. 21 (October 23, 2022): 3719. http://dx.doi.org/10.3390/nano12213719.
Повний текст джерелаCho, Hyun, S. M. Donovan, C. R. Abernathy, S. J. Pearton, F. Ren, J. Han, and R. J. Shul. "Photoelectrochemical Etching of InxGa1−xN." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 691–96. http://dx.doi.org/10.1557/s1092578300003264.
Повний текст джерелаBartel, T. P., P. Specht, J. C. Ho, and C. Kisielowski. "Phase separation in InxGa1−xN." Philosophical Magazine 87, no. 13 (May 2007): 1983–98. http://dx.doi.org/10.1080/14786430601146905.
Повний текст джерелаAnani, M., H. Abid, Z. Chama, C. Mathieu, A. Sayede, and B. Khelifa. "InxGa1−xN refractive index calculations." Microelectronics Journal 38, no. 2 (February 2007): 262–66. http://dx.doi.org/10.1016/j.mejo.2006.11.001.
Повний текст джерелаHwang, J. M., J. T. Hsieh, C. Y. Ko, H. L. Hwang, and W. H. Hung. "Photoelectrochemical etching of InxGa1−xN." Applied Physics Letters 76, no. 26 (June 26, 2000): 3917–19. http://dx.doi.org/10.1063/1.126820.
Повний текст джерелаSztein, Alexander, John Haberstroh, John E. Bowers, Steven P. DenBaars, and Shuji Nakamura. "Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN." Journal of Applied Physics 113, no. 18 (May 14, 2013): 183707. http://dx.doi.org/10.1063/1.4804174.
Повний текст джерелаКукушкин, С. А., та А. В. Осипов. "Термодинамическая стабильность твердых растворов In-=SUB=-x-=/SUB=-Ga-=SUB=-1-x-=/SUB=-N". Письма в журнал технической физики 47, № 19 (2021): 51. http://dx.doi.org/10.21883/pjtf.2021.19.51516.18879.
Повний текст джерелаWANG, Xuewen, Wenwen LIU, Chunxue ZHAI, Jiangni YUN, and Zhiyong ZHANG. "DFT Calculation on the Electronic Structure and Optical Properties of InxGa1-xN Alloy Semiconductors." Materials Science 26, no. 2 (December 18, 2019): 127–32. http://dx.doi.org/10.5755/j01.ms.26.2.21569.
Повний текст джерелаAnnab, N., T. Baghdadli, S. Mamoun, and A. E. Merad. "Numerical simulation of highly photovoltaic efficiency of InGaN based solar cells with ZnO as window layer." Journal of Ovonic Research 19, no. 4 (August 2023): 421–31. http://dx.doi.org/10.15251/jor.2023.194.421.
Повний текст джерелаPantha, B. N., R. Dahal, J. Li, J. Y. Lin, H. X. Jiang, and G. Pomrenke. "Thermoelectric properties of InxGa1−xN alloys." Applied Physics Letters 92, no. 4 (January 28, 2008): 042112. http://dx.doi.org/10.1063/1.2839309.
Повний текст джерелаKuo, Yen-Kuang, Han-Yi Chu, Sheng-Horng Yen, Bo-Ting Liou, and Mei-Ling Chen. "Bowing parameter of zincblende InxGa1−xN." Optics Communications 280, no. 1 (December 2007): 153–56. http://dx.doi.org/10.1016/j.optcom.2007.07.058.
Повний текст джерелаLi, S. X., K. M. Yu, J. Wu, R. E. Jones, W. Walukiewicz, J. W. Ager, W. Shan, E. E. Haller, Hai Lu, and William J. Schaff. "Native defects in InxGa1−xN alloys." Physica B: Condensed Matter 376-377 (April 2006): 432–35. http://dx.doi.org/10.1016/j.physb.2005.12.111.
Повний текст джерелаGartner, M., C. Kruse, M. Modreanu, A. Tausendfreund, C. Roder, and D. Hommel. "Optical characterization of InxGa1−xN alloys." Applied Surface Science 253, no. 1 (October 2006): 254–57. http://dx.doi.org/10.1016/j.apsusc.2006.05.077.
Повний текст джерелаJenkins, David W., and John D. Dow. "Electronic structures and doping of InN,InxGa1−xN, andInxAl1−xN." Physical Review B 39, no. 5 (February 15, 1989): 3317–29. http://dx.doi.org/10.1103/physrevb.39.3317.
Повний текст джерелаHuq, Md Fazlul, Zamshed Iqbal Chowdhury, Mehedhi Hasan, and Zahid Hasan Mahmood. "The efficiency of the single junction and multijunction InxGa1-xN solar cell using AMPS-1D simulator." Journal of Bangladesh Academy of Sciences 37, no. 1 (July 13, 2013): 65–72. http://dx.doi.org/10.3329/jbas.v37i1.15682.
Повний текст джерелаKim, Ki-Hong, In-Su Kim, Hun-Bo Park, In-Ho Bae, jae-In Yu, and Yoon-Seok Jang. "Study of Optical Properties of InxGa1-xN/GaN Multi-Quantum-Well." Journal of the Korean Vacuum Society 18, no. 1 (January 30, 2009): 37–43. http://dx.doi.org/10.5757/jkvs.2009.18.1.037.
Повний текст джерелаManz, Ch, M. Kunzer, H. Obloh, A. Ramakrishnan, and U. Kaufmann. "InxGa1−xN/GaN band offsets as inferred from the deep, yellow-red emission band in InxGa1−xN." Applied Physics Letters 74, no. 26 (June 28, 1999): 3993–95. http://dx.doi.org/10.1063/1.124247.
Повний текст джерелаHadjaj, F., M. Belhadj, K. Laoufi, and A. Missoum. "Optimized design of strain-compensated InxGa1-xN/GaN and InxGa1-xN/InYGa1-YN multiple-quantum-well laser diodes." Journal of Ovonic Research 17, no. 2 (March 2021): 107–15. http://dx.doi.org/10.15251/jor.2021.172.107.
Повний текст джерелаDridi, Z., B. Bouhafs, and P. Ruterana. "Pressure dependence of energy band gaps for AlxGa1 -xN, InxGa1 -xN and InxAl1 -xN." New Journal of Physics 4 (November 15, 2002): 94. http://dx.doi.org/10.1088/1367-2630/4/1/394.
Повний текст джерелаMasyukov, N. A., and A. V. Dmitriev. "Hot Electrons in InxGa1–xN and InxAl1–xN Binary Solid Solutions." Moscow University Physics Bulletin 73, no. 3 (May 2018): 325–28. http://dx.doi.org/10.3103/s0027134918030116.
Повний текст джерелаSantos, A. M., E. C. F. Silva, O. C. Noriega, H. W. L. Alves, J. L. A. Alves, and J. R. Leite. "Vibrational Properties of Cubic AlxGa1?xN and InxGa1?xN Ternary Alloys." physica status solidi (b) 232, no. 1 (July 2002): 182–87. http://dx.doi.org/10.1002/1521-3951(200207)232:1<182::aid-pssb182>3.0.co;2-q.
Повний текст джерелаWang, Shuo, Hongen Xie, Hanxiao Liu, Alec M. Fischer, Heather McFavilen, and Fernando A. Ponce. "Dislocation baskets in thick InxGa1−xN epilayers." Journal of Applied Physics 124, no. 10 (September 14, 2018): 105701. http://dx.doi.org/10.1063/1.5042079.
Повний текст джерелаShan, W., J. J. Song, Z. C. Feng, M. Schurman, and R. A. Stall. "Pressure-dependent photoluminescence study of InxGa1−xN." Applied Physics Letters 71, no. 17 (October 27, 1997): 2433–35. http://dx.doi.org/10.1063/1.120083.
Повний текст джерелаKucheyev, S. O., J. S. Williams, J. Zou, S. J. Pearton, and Y. Nakagawa. "Implantation-produced structural damage in InxGa1−xN." Applied Physics Letters 79, no. 5 (July 30, 2001): 602–4. http://dx.doi.org/10.1063/1.1388881.
Повний текст джерелаProzheeva, V., I. Makkonen, R. Cuscó, L. Artús, A. Dadgar, F. Plazaola, and F. Tuomisto. "Radiation-induced alloy rearrangement in InxGa1−xN." Applied Physics Letters 110, no. 13 (March 27, 2017): 132104. http://dx.doi.org/10.1063/1.4979410.
Повний текст джерелаKatsikini, M., E. C. Paloura, F. Boscherini, F. D’Acapito, C. B. Lioutas, and D. Doppalapudi. "Microstructural characterization of InxGa1−xN MBE samples." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 200 (January 2003): 114–19. http://dx.doi.org/10.1016/s0168-583x(02)01706-8.
Повний текст джерелаElyukhin, V. A. "Order–disorder transition in wurtzite InxGa1−xN." Journal of Crystal Growth 356 (October 2012): 53–57. http://dx.doi.org/10.1016/j.jcrysgro.2012.07.011.
Повний текст джерелаOh, Eunsoon, Myoung Hee Lee, Kwang Joo Kim, M. Y. Ryu, J. H. Song, S. W. Park, P. W. Yu, H. Park, and Y. Park. "Cathodoluminescence study of InxGa1−xN quantum wells." Journal of Applied Physics 89, no. 5 (March 2001): 2839–42. http://dx.doi.org/10.1063/1.1345849.
Повний текст джерелаTeles, L. K., L. G. Ferreira, J. R. Leite, L. M. R. Scolfaro, A. Kharchenko, O. Husberg, D. J. As, D. Schikora, and K. Lischka. "Strain-induced ordering in InxGa1−xN alloys." Applied Physics Letters 82, no. 24 (June 16, 2003): 4274–76. http://dx.doi.org/10.1063/1.1583854.
Повний текст джерелаAlshehri, Bandar, Karim Dogheche, Sofiane Belahsene, Bilal Janjua, Abderrahim Ramdane, Gilles Patriarche, Tien-Khee Ng, Boon S-Ooi, Didier Decoster, and Elhadj Dogheche. "Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics." MRS Advances 1, no. 23 (2016): 1735–42. http://dx.doi.org/10.1557/adv.2016.417.
Повний текст джерелаSuzuki, Toshimasa, Ruichi Katayama, Shun Hibino, Yoshinori Kato, Fumitaka Ohashi, Takashi Itoh, and Shuichi Nonomura. "Effect of thermal annealing in a-InxGa1–xN films prepared by reactive RF-sputtering." Canadian Journal of Physics 92, no. 7/8 (July 2014): 943–46. http://dx.doi.org/10.1139/cjp-2013-0565.
Повний текст джерелаGorczyca, I., N. E. Christensen, A. Svane, K. Laaksonen, and R. M. Nieminen. "Electronic Band Structure of InxGa1-xN under Pressure." Acta Physica Polonica A 112, no. 2 (August 2007): 203–8. http://dx.doi.org/10.12693/aphyspola.112.203.
Повний текст джерелаGauthier-Brun, A., J. H. Teng, E. Dogheche, W. Liu, A. Gokarna, M. Tonouchi, S. J. Chua, and D. Decoster. "Properties of InxGa1−xN films in terahertz range." Applied Physics Letters 100, no. 7 (February 13, 2012): 071913. http://dx.doi.org/10.1063/1.3684836.
Повний текст джерелаMcCluskey, M. D., C. G. Van de Walle, C. P. Master, L. T. Romano, and N. M. Johnson. "Large band gap bowing of InxGa1−xN alloys." Applied Physics Letters 72, no. 21 (May 25, 1998): 2725–26. http://dx.doi.org/10.1063/1.121072.
Повний текст джерелаDurbha, A. "Microstructural stability of ohmic contacts to InxGa1−xN." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14, no. 4 (July 1996): 2582. http://dx.doi.org/10.1116/1.588771.
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