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Статті в журналах з теми "Intrinsic noise"
Yang, Ren Di, and Yan Li Zhang. "Denoising of ECG Signal Based on Empirical Mode Decomposition and Adaptive Noise Cancellation." Applied Mechanics and Materials 40-41 (November 2010): 140–45. http://dx.doi.org/10.4028/www.scientific.net/amm.40-41.140.
Повний текст джерелаSun, Mengyi, and Jianzhi Zhang. "Allele-specific single-cell RNA sequencing reveals different architectures of intrinsic and extrinsic gene expression noises." Nucleic Acids Research 48, no. 2 (December 4, 2019): 533–47. http://dx.doi.org/10.1093/nar/gkz1134.
Повний текст джерелаXIE, ZHI, and DON KULASIRI. "ON EXPLORING EFFECTS OF MOLECULAR NOISE IN A SIMPLE VIRAL INFECTION MODEL." International Journal of Biomathematics 03, no. 01 (March 2010): 1–19. http://dx.doi.org/10.1142/s1793524510000891.
Повний текст джерелаLiu, Shengjun, Qi Wang, and Hai Feng. "The correlation between intrinsic noise and extrinsic noise." Physica A: Statistical Mechanics and its Applications 392, no. 20 (October 2013): 5138–42. http://dx.doi.org/10.1016/j.physa.2013.06.032.
Повний текст джерелаHayden, David, Ye Yuan, and Jorge Goncalves. "Network Identifiability from Intrinsic Noise." IEEE Transactions on Automatic Control 62, no. 8 (August 2017): 3717–28. http://dx.doi.org/10.1109/tac.2016.2640219.
Повний текст джерелаKHALDI, KAIS, MONIA TURKI-HADJ ALOUANE, and ABDEL-OUAHAB BOUDRAA. "VOICED SPEECH ENHANCEMENT BASED ON ADAPTIVE FILTERING OF SELECTED INTRINSIC MODE FUNCTIONS." Advances in Adaptive Data Analysis 02, no. 01 (January 2010): 65–80. http://dx.doi.org/10.1142/s1793536910000409.
Повний текст джерелаShen, Tao, Zhangcai Long, and Bo Chen. "External noise suppression by intrinsic noise in a neuron." Results in Physics 15 (December 2019): 102615. http://dx.doi.org/10.1016/j.rinp.2019.102615.
Повний текст джерелаVÁZQUEZ-JIMÉNEZ, AARÓN, MOISÉS SANTILLÁN, and JESÚS RODRÍGUEZ-GONZÁLEZ. "CHARACTERIZATION OF INTRINSIC AND EXTRINSIC NOISE EFFECTS IN POSITIVELY REGULATED GENES." Journal of Biological Systems 27, no. 03 (September 2019): 383–98. http://dx.doi.org/10.1142/s0218339019500165.
Повний текст джерелаSzasz, Oliver, Gyula Peter Szigeti, and Andras Szasz. "Intrinsic Noise Monitoring of Complex Systems." Open Journal of Biophysics 07, no. 04 (2017): 197–215. http://dx.doi.org/10.4236/ojbiphy.2017.74015.
Повний текст джерелаPrebianca, Flavio, Holokx A. Albuquerque, and Marcus W. Beims. "Describing intrinsic noise in Chua's circuit." Physics Letters A 382, no. 35 (September 2018): 2420–23. http://dx.doi.org/10.1016/j.physleta.2018.05.054.
Повний текст джерелаДисертації з теми "Intrinsic noise"
Qu, Song. "Non-Intrinsic Differential-Mode Noise in Switching Power Supplies and Its Implications to EMI Filter Design." Thesis, Virginia Tech, 1999. http://hdl.handle.net/10919/9788.
Повний текст джерелаMaster of Science
Hortsch, Sayuri Katharina [Verfasser], Andreas [Akademischer Betreuer] Kremling, Andreas [Gutachter] Kremling, and Christina [Gutachter] Kuttler. "Model-based characterization of intrinsic noise in multistable genetic circuits / Sayuri Katharina Hortsch ; Gutachter: Andreas Kremling, Christina Kuttler ; Betreuer: Andreas Kremling." München : Universitätsbibliothek der TU München, 2018. http://d-nb.info/1171425600/34.
Повний текст джерелаMurrugarra, Tomairo David M. "Algebraic Methods for Modeling Gene Regulatory Networks." Diss., Virginia Tech, 2012. http://hdl.handle.net/10919/28388.
Повний текст джерелаPh. D.
Xie, Zhi. "Modelling genetic regulatory networks: a new model for circadian rhythms in Drosophila and investigation of genetic noise in a viral infection process." Phd thesis, Lincoln University. Agriculture and Life Sciences Division, 2007. http://theses.lincoln.ac.nz/public/adt-NZLIU20070712.144258/.
Повний текст джерелаSaygun, Yakup. "Computational Stochastic Morphogenesis." Thesis, Uppsala universitet, Avdelningen för beräkningsvetenskap, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-257096.
Повний текст джерелаAndrade, Maria Glória Caño de. "Estudo de transistores de porta tripla de corpo." Universidade de São Paulo, 2012. http://www.teses.usp.br/teses/disponiveis/3/3140/tde-10062013-150025/.
Повний текст джерелаThe main goal of this work is to investigate the n-channel MuGFETs (triple-gate) Bulk transistors with and without the application of DTMOS operation. This work will be done through three-dimensional numerical simulation and by electrical characterizations. The drain current, transconductance, resistance, threshold voltage, subthreshold swing and Drain Induced Barrier Lowering (DIBL) will be analyzed in the DTMOS mode and the standard biasing configuration. Important figures of merit for the analog performance such as transconductance-over-drain current, output conductance, Early voltage and intrinsic voltage gain will be studied experimentally and through three-dimensional numerical simulations for different channel doping concentrations. The results indicate that the DTMOS configuration has superior electrical characteristics (4 e 10 %) and higher transistor efficiency. In addition, DTMOS devices with a high channel doping concentration exhibit much better analog performance compared to the normal operation mode. Low-Frequency (LF) noise is for the first time experimentally investigated in linear and saturation region. The origin of the noise will be analyzed in order to understand the physical mechanisms involved in this type of noise. Measurements showed that the signal spectra for Bulk and DTMOS are composed of number fluctuations related flicker noise with on top generation and recombination noise humps, which become more pronounced at higher gate voltage. However, the most important finding is the fact that DTMOS devices showed practically the same LF noise magnitude in linear and saturation region than standard Bulk device. Proton irradiation with energy of 60 MeV and fluence of p/1012 cm-2 is also experimentally studied in terms of electric characteristic, analog performance and the LF noise in Bulk and DTMOS triple gate devices. The results indicate that the combined of the better electrical characteristics and an excellent analog performance of DTMOS devices, makes it a very competitive candidate for low-noise RF analog applications before and after irradiation. The advantage of dynamic threshold voltage in triple gate transistors in environments where the devices have to withstand high-energy radiation is due to its lower drain electric field penetration that lowers the effect of the radiation-induced charges in the STI (shallow trench isolation) regions adjacent to the fin. Finally, the n-channel triple gate Bulk device is used for memory application, that is, 1T-DRAM (Dynamic Random Access Memory with 1 Transistor). Bipolar junction transistor (BJT) programming mode is used to write and read 1 while the forward biasing of the body-drain junction is used to write 0. The reading and writing current increases with increasing body bias (VB) because the load induced by the BJT effect is stored within the fin. When the body of the transistor is floating, the device retains more charge within its fin. In addition, transistor could also operate as 1T-DRAM with both gate and bulk contacts floating, which is similar to the biristor (gateless) behavior.
Deloupy, Alexandre. "Expression stochastique des gènes chez Bacillus subtilis." Thesis, Sorbonne université, 2018. http://www.theses.fr/2018SORUS443.
Повний текст джерелаA population of genetically identical individuals sharing the same environment exhibits some residual phenotypic variability. Such heterogeneity arises from the stochastic, or random, nature of gene expression also referred as noise. This stochasticity results on the one hand from the random encounter of chemical species during both transcription and translation (intrinsic noise), and on the other hand from the fluctuations in the concentration of these chemicals (extrinsic noise). A stochastic model involving only intrinsic noise predicts that phenotypic noise strength varies linearly with translational efficiency but does not depend on transcriptional one. This prediction was shown to be compatible with data on a limited number of strains and conditions but has never been fully tested on a large collection of strains with different transcription and translation efficiencies. We aim to go further in the test of this prediction by using a collection of ~40 strains of the bacterium Bacillus subtilis where GFP is expressed under the control of different Promoters, TSS and RBS. For each strain, cell-to-cell heterogeneity is investigated by quantifying fluorescence signal at the single cell level, based on flow cytometry techniques and epifluorescence microscopy. Our results show that, contrary to expectations, phenotypic noise strength shows a strong positive correlation with transcriptional efficiency. We demonstrated that over a wide range of expression covering most of the proteome of B. subtilis, the expression noise is dominated by external noise sources. Therefore, stochastic models of gene expression are not suitable for quantifying the effects of translation and transcription on gene expression noise
Al, Roumi Fosca. "Théorie Lagrangienne Relativiste de la Formation des Grandes Structures : description Intrinsèque des Perturbations et Gravitoélectromagnétisme." Thesis, Lyon 1, 2015. http://www.theses.fr/2015LYO10136/document.
Повний текст джерелаThe dynamics of structure formation in the Universe is usually described by Newtonian numerical simulations and analytical models in the frame of the Standard Model of Cosmology. The structures are then defined on a homogeneous and isotropic background. Such a description has major drawbacks since, to be self-consistent, it entails a large amount of dark components in the content of the Universe. To address the problem of dark matter and dark energy, we will neither suppose that exotic sources contribute to the content of the Universe, nor that General Relativity is obsolete. We will develop a more realistic description of structure formation in the frame of General Relativity and thus no longer assume that the average model is a homogeneous-isotropic solution of the Einstein equations, as claimed by the Standard Model of Cosmology. During my work under the supervision of Thomas Buchert, I contributed to the development of the perturbative formalism that enables a more realistic description of spacetime dynamics. In the framework of the intrinsic Lagrangian approach, which avoids defining physical quantities on a flat background, I contributed to the building of relativistic solutions to the gravitoelectric part of the Einstein equations from the generalization of the Newtonian perturbative solutions. Moreover, the gravitoelectromagnetic approach I worked with has provided a new understanding of the dynamics of the analytical solutions to the field equations. Finally, treating globally the spatial manifold, I used powerful mathematical tools and theorems to describe the impact of topology on the dynamics of gravitational waves
Chung, Tien-Shen, and 鍾天伸. "Intrinsic noise in genetic regulation networks." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/23227796124027063488.
Повний текст джерела中原大學
應用物理研究所
95
In this thesis, we investigate the intrinsic noise in transcription and translation level of genetic regulation networks without environmental conditions. The genetic regulation networks can be mathematically described by rate equations. To obtain the stochastic features of the system, the macroscopic rate equation is first rewritten as the stochastic master equation, and then expansion method is used to obtain the linear noise Fokker-Planck equation. We use the linear noise Fokker-Planck equation to analyze the stochastic fluctuations in the regulation networks of single gene and toggle switch. The noise strength is measured by Fano Factor which is defined as variance over mean, and the correlation of noise is also analyzed. The effect of regulation strength on the characteristics of noises and discussed.
Lin, Yi-Min, and 林益民. "Lossy Substrate De-embedding Method for RF MOSFET Intrinsic Noise Extraction." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/45213202486085666236.
Повний текст джерела國立交通大學
電子工程系所
94
For sub-100nm MOSFETs with the gate length scaling to 80 nm and 65 nm, the unit current gain cut off frequency (fT) can achieve as high as 100 GHz and 165 GHz, respectively. However, the as-measured noise figure shows no much difference between 80 nm and 65 nm devices. The minimum noise figure (NFmin) is even higher than 5dB at 10GHz under gate bias responsible for the maximum fT. Strong finger number dependence of noise figure was also observed. All the mentioned phenomena can not be simply explained by gate resistance reduction through multi-finger structure. It suggests that noise de-embedding is required for the as-measured noise parameters. In this thesis, the basic noise theory of MOSFET, noise measurement principles and instruments will be covered in the first place. Conventional noise correlation matrix de-embedding method will be reviewed. Regarding the intrinsic MOSFET model, I-V and C-V model calibration have been done based on the measured I-V, transconductance, and admittance by Y-parameters. Then discussion of different probing pad effect on device characterization and the corresponding equivalent circuit model has been established and extensively verified. A new equivalent circuit de-embedding method was proposed. Modeling of as-measured S-parameters and noise parameters was done by incorporating the pad model with a well calibrated MOSEFT model. The lossy pad and lossy substrate de-embedding has been conducted to obtain the intrinsic characteristic. Finally, the intrinsic performance of the device will be analyzed and discussed.
Книги з теми "Intrinsic noise"
Fermüller, Cornelia. Motion Illusions in Man and Machine. Oxford University Press, 2017. http://dx.doi.org/10.1093/acprof:oso/9780199794607.003.0006.
Повний текст джерелаAlvesson, Mats, Yiannis Gabriel, and Roland Paulsen. Return to Meaning. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198787099.001.0001.
Повний текст джерелаЧастини книг з теми "Intrinsic noise"
Fish, Peter J. "Intrinsic Noise." In Electronic Noise and Low Noise Design, 72–90. London: Macmillan Education UK, 1993. http://dx.doi.org/10.1007/978-1-349-23060-0_4.
Повний текст джерелаWeik, Martin H. "intrinsic noise." In Computer Science and Communications Dictionary, 833. Boston, MA: Springer US, 2000. http://dx.doi.org/10.1007/1-4020-0613-6_9552.
Повний текст джерелаWang, Ruiqi. "Noise, Intrinsic and Extrinsic." In Encyclopedia of Systems Biology, 1527. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4419-9863-7_353.
Повний текст джерелаHanke, Ulrik, Yu Galperin, and K. A. Chao. "Intrinsic Noise in Coulomb-Blockaded Devices." In Quantum Dynamics of Submicron Structures, 411–26. Dordrecht: Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0019-9_32.
Повний текст джерелаHazelwood, Richard A., and Patrick C. Macey. "Intrinsic Directional Information of Ground Roll Waves." In The Effects of Noise on Aquatic Life II, 447–53. New York, NY: Springer New York, 2016. http://dx.doi.org/10.1007/978-1-4939-2981-8_53.
Повний текст джерелаMackey, Michael C., Moisés Santillán, Marta Tyran-Kamińska, and Eduardo S. Zeron. "Noise Effects in Gene Regulation: Intrinsic Versus Extrinsic." In Lecture Notes on Mathematical Modelling in the Life Sciences, 49–69. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-45318-7_4.
Повний текст джерелаSaito, Atsushi, Manabu Abe, Akinobu Irie, Gin-ichiro Oya, and Katsuyoshi Hamasaki. "Low Frequency Noise Properties of Bi2Sr2CaCu2Oy Intrinsic Josephson Junctions." In Advances in Superconductivity XII, 1120–22. Tokyo: Springer Japan, 2000. http://dx.doi.org/10.1007/978-4-431-66877-0_331.
Повний текст джерелаAdamu-Lema, F., C. Monzio Compagnoni, O. Badami, V. Georgiev, and A. Asenov. "RTN and Its Intrinsic Interaction with Statistical Variability Sources in Advanced Nano-Scale Devices: A Simulation Study." In Noise in Nanoscale Semiconductor Devices, 441–66. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-37500-3_13.
Повний текст джерелаSoyel, Hamit, Kamil Yurtkan, Hasan Demirel, and Peter W. McOwan. "Brain MR Image Denoising for Rician Noise Using Intrinsic Geometrical Information." In Lecture Notes in Electrical Engineering, 275–84. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-22635-4_25.
Повний текст джерелаSternad, Dagmar, Meghan E. Huber, and Nikita Kuznetsov. "Acquisition of Novel and Complex Motor Skills: Stable Solutions Where Intrinsic Noise Matters Less." In Advances in Experimental Medicine and Biology, 101–24. New York, NY: Springer New York, 2014. http://dx.doi.org/10.1007/978-1-4939-1338-1_8.
Повний текст джерелаТези доповідей конференцій з теми "Intrinsic noise"
Stienstra, A., A. S. Badger, and P. W. Maxwell. "Intrinsic noise in geophones." In 55th EAEG Meeting. European Association of Geoscientists & Engineers, 1993. http://dx.doi.org/10.3997/2214-4609.201411481.
Повний текст джерелаBuvin, G. M., and A. M. Shvachkin. "Microwave Diode Intrinsic LF Noise Measurements." In 2007 17th International Crimean Conference - Microwave & Telecommunication Technology. IEEE, 2007. http://dx.doi.org/10.1109/crmico.2007.4368910.
Повний текст джерелаRigling, Brian D. "Intrinsic processing gains in noise radar." In 2006 International Waveform Diversity & Design Conference. IEEE, 2006. http://dx.doi.org/10.1109/wdd.2006.8321462.
Повний текст джерелаCorral, Elena Pascual, Raúl Rengel, María J. Martín, Massimo Macucci, and Giovanni Basso. "Intrinsic Noise Sources in a Schottky Barrier MOSFET: a Monte Carlo Analysis." In NOISE AND FLUCTUATIONS: 20th International Conference on Noice and Fluctuations (ICNF-2009). AIP, 2009. http://dx.doi.org/10.1063/1.3140465.
Повний текст джерелаTóth, L., M. Koós, and I. Pócsik. "Electrical conductivity noise in intrinsic a-Si:H at low frequencies." In Noise in physical systems and 1/. AIP, 1993. http://dx.doi.org/10.1063/1.44589.
Повний текст джерелаDuan, Lingze. "Intrinsic Thermodynamic Noise in Passive Fiber Systems." In Frontiers in Optics. Washington, D.C.: OSA, 2012. http://dx.doi.org/10.1364/fio.2012.fth1d.7.
Повний текст джерелаYin, Haibing, Yadong Liu, Zongtan Zhou, Ming Li, Yucheng Wang, and Dewen Hu. "Structured noise analysis in intrinsic optical imaging." In 2010 9th IEEE International Conference on Cognitive Informatics (ICCI). IEEE, 2010. http://dx.doi.org/10.1109/coginf.2010.5599711.
Повний текст джерелаAllen, B. F., F. Picon, S. Dalibard, N. Magnenat-Thalmann, and D. Thalmann. "Localizing a mobile robot with intrinsic noise." In 2012 3DTV-Conference: The True Vision - Capture, Transmission and Display of 3D Video (3DTV-CON 2012). IEEE, 2012. http://dx.doi.org/10.1109/3dtv.2012.6365480.
Повний текст джерелаRen, L., and F. N. Hooge. "Intrinsic and extrinsic 1/f noise sources in irradiated n-GaAs." In Noise in physical systems and 1/. AIP, 1993. http://dx.doi.org/10.1063/1.44629.
Повний текст джерелаGarcía-Loureiro, A. J. "Intrinsic fluctuations induced by a high-κ gate dielectric in sub-100 nm Si MOSFETs". У NOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005. AIP, 2005. http://dx.doi.org/10.1063/1.2036740.
Повний текст джерелаЗвіти організацій з теми "Intrinsic noise"
Webb, Kevin J. Development of a Noise Intrinsic Equivalent Circuit Model Using Experimental and Numerical Techniques. Fort Belvoir, VA: Defense Technical Information Center, November 2005. http://dx.doi.org/10.21236/ada441362.
Повний текст джерела