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Статті в журналах з теми "Intersubband absorption"

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Автор: Grafiati

Опубліковано: 10 грудня 2022

Оновлено: 28 січня 2023

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1

OZTURK, E., H. SARI, and I. SOKMEN. "INTERSUBBAND OPTICAL ABSORPTION IN QUANTUM WELLS UNDER APPLIED ELECTRIC AND INTENSE LASER FIELDS." Surface Review and Letters 11, no. 03 (June 2004): 297–303. http://dx.doi.org/10.1142/s0218625x04006219.

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Анотація:

Within the framework of the effective mass approximation, we have theoretically investigated the linear intersubband optical absorption in a quantum well under external electric and intense laser field. Results obtained show that intersubband optical transition and energy levels in quantum wells can significantly be modified and controlled by the electric field and intense laser field. Generally there is a distinct feature for the case of the intersubband absorption compared with intersubband optical absorption in a quantum well with an applied electric field.

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2

SEILMEIER, A., S. HANNA, V. A. SHALYGIN, D. A. FIRSOV, L. E. VOROBJEV, V. M. USTINOV, and A. E. ZHUKOV. "INTERSUBBAND SPECTROSCOPY IN QUANTUM WELL STRUCTURES AT HIGH NONEQUILIBRIUM CARRIER DENSITIES." International Journal of Nanoscience 02, no. 06 (December 2003): 445–51. http://dx.doi.org/10.1142/s0219581x03001541.

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In the present paper, the electronic intersubband transitions in semiconductor quantum well structures are investigated using transient mid infrared absorption spectroscopy after interband photoexcitation with intense picosecond pulses in the visible spectral range. The focus of our investigations is on the e2–e3 intersubband transition in an asymmetric undoped GaAs / AlGaAs quantum well (QW) structure at room temperature. At injected nonequilibrium carrier densities of 1×1013 cm -2 per QW, an e2–e3 absorption band at 99 meV is found which is blue-shifted with increasing carrier density. Intersubband absorption signals are distinguished from free-carrier absorption signals in the mid infrared (MIR) by their characteristic time behavior.

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3

TAKAHASHI, YUTAKA, TADASHI KAWAZOE, HITOSHI KAWAGUCHI, and YUICHI KAWAMURA. "INTERSUBBAND TRANSITIONS IN DOPED AND UNDOPED QUANTUM WELL STRUCTURES OF In0.53Ga0.47As/In0.52Al0.48As." Journal of Nonlinear Optical Physics & Materials 10, no. 03 (September 2001): 337–44. http://dx.doi.org/10.1142/s0218863501000681.

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We have successfully observed the intersubband absorption in doped as well as in undoped, unstrained quantum well structures of In0.53Ga0.47As/In0.52Al0.48As . The absorption is well resolved near the short-wavelength limit in this structure. Within the accuracy of our measurements, the intersubband transition is observed only in TM mode polarizations in both doped and undoped structures.

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4

Yao, J., W. Zheng, H. Opper, J. Cai, and G. W. Taylor. "Intersubband absorption in modulation doped heterostructures." Journal of Applied Physics 108, no. 1 (July 2010): 013104. http://dx.doi.org/10.1063/1.3436595.

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5

Crnjanski, J. V., and D. M. Gvozdić. "Intersubband Absorption in Quantum Dash Nanostructures." Acta Physica Polonica A 116, no. 4 (October 2009): 668–71. http://dx.doi.org/10.12693/aphyspola.116.668.

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6

Faist, Jérome, Carlo Sirtori, Federico Capasso, Sung-Nee G. Chu, Loren N. Pfeiffer, and Ken W. West. "Tunable Fano interference in intersubband absorption." Optics Letters 21, no. 13 (July 1, 1996): 985. http://dx.doi.org/10.1364/ol.21.000985.

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7

Pan, Dong, Y. P. Zeng, J. M. Li, C. H. Zhang, M. Y. Kong, H. M. Wang, C. Y. Wang, and J. Wu. "Intersubband absorption from quantum dot superlattice." Journal of Crystal Growth 175-176 (May 1997): 760–64. http://dx.doi.org/10.1016/s0022-0248(96)01010-x.

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8

REZAEI, G., M. R. K. VAHDANI, and M. BARATI. "INTERSUBBAND OPTICAL ABSORPTION COEFFICIENTS AND REFRACTIVE INDEX CHANGES OF AN ELLIPSOIDAL FINITE POTENTIAL QUANTUM DOT." Journal of Nonlinear Optical Physics & Materials 19, no. 01 (March 2010): 131–43. http://dx.doi.org/10.1142/s021886351000511x.

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Анотація:

Intersubband optical absorption coefficient and refractive index changes of a weakly prolate ellipsoidal quantum dot, using the compact-density matrix formalism and iterative method, are investigated. In this regard, the linear and nonlinear intersubband optical absorption coefficient and refractive index changes of a GaAs / Al x Ga 1-x As ellipsoidal quantum dot, as functions of the dot radius, ellipticity constant, stoichiometric ratio and incident light intensity are calculated. The results indicate that absorption coefficient and refractive index changes strongly depend on the light intensity, size and geometry of the dot and structure parameters such as aluminium concentration in GaAs / Al x Ga 1-x As structures.

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9

ZAŁUŻNY, M., and W. ZIETKOWSKI. "ELECTRODYNAMIC RESPONSE OF MULTIPLE QUANTUM WELLS: THE INTERSUBBAND RESONANCE REGION." International Journal of High Speed Electronics and Systems 12, no. 03 (September 2002): 907–24. http://dx.doi.org/10.1142/s0129156402001745.

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The electrodynamic properties of multiple quantum wells (MQWs) associated with intersubband transitions are discussed in context of infrared detectors. The effective medium approach is used for modeling of MQW structures. The usefulness of the concept of the radiative intersubband plasmon-polaritons in the description of the complex behavior of grazing-angle absorption spectra is also demonstrated.

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10

ZHAO, Y., D. HUANG, and C. WU. "FIELD-INDUCED QUANTUM INTERFERENCE IN SEMICONDUCTOR QUANTUM WELLS FOR LASING WITHOUT POPULATION INVERSION AND ELECTROMAGNETICALLY INDUCED TRANSPARENCY." Journal of Nonlinear Optical Physics & Materials 04, no. 02 (April 1995): 261–82. http://dx.doi.org/10.1142/s0218863595000112.

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This paper presents the current results of field-induced quantum interference in semiconductor quantum wells. Three-level systems with two conduction subbands in single and double quantum wells coupled by a resonant field are studied. We investigate effects of the Coulomb and field-induced electronic renormalizations of the energy subbands and steady eigenstates of electrons. The random-phase and ladder approximations have been used to calculate the linear interband and intersubband optical absorptions and refractive indices. The effect of collective dipole moment on the nonlinear susceptibility has been incorporated into the study by using a local-field approach. Lasing without population inversion, electromagnetically induced transparency, and enhanced nonlinearity with reduced absorption inside the intersubband-coupled single quantum well and dc-field coupled double quantum wells are found.

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11

Liu, DongFeng, and GuoWei Chen. "Terahertz Absorption in Quantum Devices Based on Mg_xZn_1−xO/ZnO Quantum Well Structures." Journal of Nanoelectronics and Optoelectronics 17, no. 7 (July 1, 2022): 1031–36. http://dx.doi.org/10.1166/jno.2022.3282.

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The energy level structures of MgxZn1−xO/ZnO/MgxZn1−xO quantum wells (QWs) with various geometrical structures and material compositions are obtained. Terahertz (THz) intersubband absorption can be realized and tunable with x in the range of 0.01~0.04 and well width in the range of 5~13 nm. Electron scattering such as piezoelectric acoustic phonon (PAP), polar optical phonon (POP), interface roughness (IFR), and random alloy (RAS) scattering are included in the calculations to analyze the linewidth broadening. Increasing the Mg composition or decreasing the well width can obtain high-frequency THz intersubband absorption, in which case IFR is found to be the physical mechanism that makes the linewidth broaden. On the other hand, the influence difference of PAP scattering for the lower Mg composition, which may be caused by the different electro-mechanical coupling coefficients (EMCC), is obviously larger than that for the higher Mg composition, meaning that the accurate value of EMCC is much more important for the THz intersubband absorption in MgxZn1−xO/ZnO/MgxZn1−xO QWs with a smaller x. The findings are helpful in the design of THz detector devices.

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12

LEI, W., Y. H. CHEN, P. JIN, B. XU, X. L. YE, Z. G. WANG, and X. Q. HUANG. "LATERAL INTERSUBBAND PHOTOCURRENT STUDY ON InAs/InAlAs/InP SELF-ASSEMBLED NANOSTRUCTURES." International Journal of Nanoscience 05, no. 06 (December 2006): 729–35. http://dx.doi.org/10.1142/s0219581x06005066.

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We present lateral intersubband photocurrent (PC) study on self-assembled InAs/InAlAs/InP (001) nanostructures in normal incidence. With the help of interband excitation, a broad PC signal has been observed in the photon energy range of 150–630 meV arising from the bound-to-continuum intersubband absorption in the InAs nanostructures. The large linewidth of the intersubband PC signal is due to the size inhomogeneity of the nanostructures. With the increase of the interband excitation the intersubband PC signal firstly increases with a redshift of PC peak and reaches its maximum, then decreases with no peak shift. The increase and redshift of the PC signal at low excitation level can be explained by the state filling effect. However, the decrease of PC signal at high excitation level may be due to the change of the mobility and lifetime of the electrons. The intersubband PC signal decreases when the temperature is increased, which can be explained by the decrease of the mobility and lifetime of the electrons and the thermal escape of electrons.

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13

Leo, J., and B. Movaghar. "Intersubband optical absorption in a biased superlattice." Journal of Applied Physics 65, no. 12 (June 15, 1989): 5019–23. http://dx.doi.org/10.1063/1.343175.

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14

Gvozdić, Dejan M., and Andreas Schlachetzki. "Intersubband absorption in V-groove quantum wires." Journal of Applied Physics 94, no. 8 (2003): 5049. http://dx.doi.org/10.1063/1.1610804.

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15

Zal/użny, M. "Intersubband absorption line shape in tunneling superlattices." Applied Physics Letters 60, no. 12 (March 23, 1992): 1486–88. http://dx.doi.org/10.1063/1.107279.

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16

Shahbazyan, T. V., J. Dai, and M. E. Raikhb. "Two-Plasmon Intersubband Absorption in Quantum Wells." Journal of Physics: Conference Series 38 (May 10, 2006): 220–23. http://dx.doi.org/10.1088/1742-6596/38/1/053.

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17

Müller, T., R. Bratschitsch, G. Strasser, and K. Unterrainer. "Intersubband absorption dynamics in coupled quantum wells." Applied Physics Letters 79, no. 17 (October 22, 2001): 2755–57. http://dx.doi.org/10.1063/1.1413728.

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18

Asai, Hiromitsu, and Yuichi Kawamura. "Intersubband absorption inIn0.53Ga0.47As/In0.52Al0.48As multiple quantum wells." Physical Review B 43, no. 6 (February 15, 1991): 4748–59. http://dx.doi.org/10.1103/physrevb.43.4748.

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19

Kiledjian, M. S., J. N. Schulman, and K. L. Wang. "Intersubband quantum well absorption with resonant barriers." Surface Science 267, no. 1-3 (January 1992): 454–56. http://dx.doi.org/10.1016/0039-6028(92)91175-b.

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20

Trzeciakowski, W., and B. D. McCombe. "Tailoring the intersubband absorption in quantum wells." Applied Physics Letters 55, no. 9 (August 28, 1989): 891–93. http://dx.doi.org/10.1063/1.101617.

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21

Boucaud, P., L. Gao, F. Visocekas, Z. Moussa, J. M. Lourtioz, F. H. Julien, I. Sagnes, Y. Campidelli, P. A. Badoz, and P. Vagos. "Photo-induced intersubband absorption in quantum wells." Journal of Crystal Growth 157, no. 1-4 (December 1995): 227–30. http://dx.doi.org/10.1016/0022-0248(95)00408-4.

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22

WANG, RUI-ZHEN, KANG-XIAN GUO, BIN CHEN, and YUN-BAO ZHENG. "INTERSUBBAND OPTICAL ABSORPTION IN CYLINDRICAL QUANTUM DOT QUANTUM WELL." International Journal of Modern Physics B 23, no. 14 (June 10, 2009): 3179–86. http://dx.doi.org/10.1142/s0217979209052728.

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The intersubband optical absorption in cylindrical quantum dot quantum well (QDQW) for different sizes of QDQW is theoretically studied. The analytical expression of the absorption coefficient is derived by using the compact density-matrix approach and the iterative method. And the numerical calculations are presented for a typical GaAs / AlGaAs QDQW. The results obtained show that the optical absorption coefficient in the QDQW can be importantly modified by size of shell well. Moreover, they also show that the optical absorption is strongly dependent on the incident optical intensity.

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23

KOLODZEY, J., T. N. ADAM, R. T. TROEGER, P. C. LV, S. K. RAY, I. YASSIEVICH, M. ODNOBLYUDOV, and M. KAGAN. "TERAHERTZ EMITTERS AND DETECTORS BASED ON SiGe NANOSTRUCTURES." International Journal of Nanoscience 03, no. 01n02 (February 2004): 171–76. http://dx.doi.org/10.1142/s0219581x0400195x.

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Terahertz (THz) electroluminescence was produced by three different types of sources: intersubband transitions in silicon germanium quantum wells, resonant state transitions in boron-doped strained silicon germanium layers, and hydrogenic transitions from dopant atoms in silicon. The devices were grown by molecular beam epitaxy, fabricated by dry etching, and characterized by infrared spectroscopy. The absorption of THz was observed in silicon germanium quantum wells at energies corresponding to heavy hole and light hole intersubband transitions. These results suggest that SiGe nanotechnology is attractive for THz device applications.

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24

Shakuda, Yukio, and Hisashi Katahama. "Intersubband Absorption in In0.15Ga0.85As/Al0.35Ga0.65As Multiple Quantum Wells." Japanese Journal of Applied Physics 29, Part 2, No. 4 (April 20, 1990): L552—L555. http://dx.doi.org/10.1143/jjap.29.l552.

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25

Pan, Shao-hua, and Si-min Feng. "Optical saturation of intersubband absorption in semiconductor superlattices." Physical Review B 44, no. 15 (October 15, 1991): 8165–69. http://dx.doi.org/10.1103/physrevb.44.8165.

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26

Jancu, Jean-Marc, Franco Bassani, and Paul Voisin. "Normal-incidence intersubband absorption in AlGaSb quantum wells." Journal of Applied Physics 92, no. 1 (July 2002): 641–43. http://dx.doi.org/10.1063/1.1482424.

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27

Berger, V., G. Vermeire, P. Demeester, and C. Weisbuch. "Normal incidence intersubband absorption in vertical quantum wells." Applied Physics Letters 66, no. 2 (January 9, 1995): 218–20. http://dx.doi.org/10.1063/1.113139.

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28

Gopal, A. V., H. Yoshida, A. Neogi, N. Georgiev, and T. Mozume. "Intersubband absorption saturation in InGaAs-AlAsSb quantum wells." IEEE Journal of Quantum Electronics 38, no. 11 (November 2002): 1515–20. http://dx.doi.org/10.1109/jqe.2002.804293.

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29

Eckhause, T. A., S. Tsujino, E. G. Gwinn, M. Thomas, and H. Kroemer. "Intersubband absorption in Nb-clad InAs quantum wells." Physica E: Low-dimensional Systems and Nanostructures 6, no. 1-4 (February 2000): 856–59. http://dx.doi.org/10.1016/s1386-9477(99)00231-3.

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30

Garini, Y., E. Cohen, Arza Ron, E. Ehrenfreund, K. K. Law, J. L. Merz, and A. C. Gossard. "Photoinduced intersubband absorption in n-doped quantum wells." Journal of Luminescence 53, no. 1-6 (July 1992): 288–92. http://dx.doi.org/10.1016/0022-2313(92)90158-6.

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31

Wang, Guang-hui. "Nonlinear intersubband optical absorption in semiparabolic quantum wells." Optik 125, no. 10 (May 2014): 2374–77. http://dx.doi.org/10.1016/j.ijleo.2013.10.116.

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32

Hanna, S., S. R. Schmidt, V. A. Shalygin, D. A. Firsov, L. E. Vorobjev, V. M. Ustinov, A. E. Zhukov, and A. Seilmeier. "Intersubband absorption in highly photoexcited semiconductor quantum wells." Physica E: Low-dimensional Systems and Nanostructures 19, no. 4 (September 2003): 364–71. http://dx.doi.org/10.1016/s1386-9477(03)00383-7.

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33

Cho, Sung M., and Hong H. Lee. "Intersubband optical absorption in Si/Si1−xGex superlattices." Journal of Applied Physics 72, no. 12 (December 15, 1992): 6011–13. http://dx.doi.org/10.1063/1.352323.

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34

Boucaud, P., L. Gao, Z. Moussa, F. Visocekas, F. H. Julien, J. ‐M Lourtioz, I. Sagnes, Y. Campidelli, and P. ‐A Badoz. "Photoinduced intersubband absorption in Si/SiGe quantum wells." Applied Physics Letters 67, no. 20 (November 13, 1995): 2948–50. http://dx.doi.org/10.1063/1.114821.

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35

Bedoya, M., and A. S. Camacho B. "Nonlinear intersubband THz absorption in asymmetric quantum wells." physica status solidi (c) 2, no. 8 (May 2005): 2935. http://dx.doi.org/10.1002/pssc.200590007.

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36

Petroy, A. G., and A. Shik. "Intersubband optical absorption of holes in quantum wells." Superlattices and Microstructures 15, no. 4 (June 1994): 467–69. http://dx.doi.org/10.1006/spmi.1994.1089.

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37

Bedoya, M., and A. S. Camacho B. "Nonlinear intersubband THz absorption in asymmetric quantum wells." physica status solidi (c) 2, no. 8 (May 2005): 2986–89. http://dx.doi.org/10.1002/pssc.200460727.

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38

Chattopadhyay, D., and P. C. Rakshit. "Intersubband absorption in (Hg, Cd)Te quantum wells." Solid State Communications 82, no. 2 (April 1992): 117–19. http://dx.doi.org/10.1016/0038-1098(92)90683-z.

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39

UNGAN, F., U. YESILGUL, E. KASAPOGLU, H. SARI, and I. SOKMEN. "OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD." International Journal of Modern Physics B 26, no. 06 (March 10, 2012): 1250013. http://dx.doi.org/10.1142/s0217979212500130.

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Анотація:

The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1–2) transition and the binding energy of the shallow-donor impurities in a Ga 1-x In x N y As 1-y/ GaAs / Al 0.3 Ga 0.7 As quantum well under the electric field is theoretically calculated within the framework of the effective-mass approximation. Results are obtained for several concentrations of nitrogen and indium, and the applied electric field. The numerical results show that the intersubband transitions and the impurity binding energy strongly depend on the nitrogen and indium concentrations.

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40

Yadav, A. R., S. K. Dubey, R. L. Dubey, N. Subramanyam, and I. Sulania. "Intersubband Absorption in Gallium Arsenide Implanted with Silicon Negative Ions." International Journal of Nanoscience 19, no. 03 (November 29, 2019): 1950019. http://dx.doi.org/10.1142/s0219581x19500194.

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Gallium arsenide (GaAs) implanted with silicon forming intersubband of SiGaAs is a promising material for making novel electronic and optoelectronic devices. This paper is focused on finding optimum fluence condition for formation of intersubband of SiGaAs in GaAs sample after implantation with 50[Formula: see text]keV silicon negative ions with fluences varying between [Formula: see text] and [Formula: see text] ions cm[Formula: see text]. The GaAs samples were investigated using X-ray photoelectron spectroscopy (XPS), UV-Vis.-NIR spectroscopy and X-ray diffraction (XRD) techniques. The X-ray photoelectron spectra for unimplanted sample showed peaks at binding energy of 18.74[Formula: see text]eV and 40.74[Formula: see text]eV indicating Ga3d and As3d core level, whereas the corresponding core level peaks for implanted sample were observed at binding energy of 19.25[Formula: see text]eV and 41.32[Formula: see text]eV. The shift in Ga3d and As3d core levels towards higher binding energy side in the implanted sample with respect to unimplanted sample were indicative of change in chemical state environment of Ga–As bond. The relative atomic percentage concentration of elemental composition measured using casa XPS software showed change in As/Ga ratio from 0.89 for unimplanted sample to 1.13 for sample implanted with the fluence of [Formula: see text] ion cm[Formula: see text]. The UV-Vis-NIR spectra showed absorption band between 1.365[Formula: see text]eV and 1.375[Formula: see text]eV due to the formation of intersubband of SiGaAs for fluences greater than [Formula: see text] ion cm[Formula: see text]. The GaAs crystallite size calculated using Brus formula was found to vary between 162[Formula: see text]nm and 540[Formula: see text]nm, respectively. The XRD spectra showed the presence of Bragg’s peak at 53.98∘ indicating (311) silicon reflection. The silicon crystallite size determined from full width at half maxima (FWHM) of (311) XRD peak was found to vary between 110[Formula: see text]nm and 161[Formula: see text]nm, respectively.

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41

Li, Zhiguo, Qiang Zhao, Pingping Chen, and Jiqing Wang. "Modulation and optimization of terahertz absorption in micro-cavity quantum well structures by graphene grating." Journal of Physics D: Applied Physics 55, no. 16 (January 21, 2022): 165104. http://dx.doi.org/10.1088/1361-6463/ac3fe0.

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Abstract Metal–insulator–metal-based plasmonic microcavities have attracted widespread interest due to their ability to manipulate and concentrate photons on the sub-wavelength scale. However, noble metals suffer from large intrinsic loss and lack active tunability. Here, a micro-cavity structure of a quantum well sandwiched between a periodic top contact of graphene grating and a bottom contact of graphene is proposed. Graphene plasmons provide a suitable alternative for metal plasmons and have the advantage of being highly tunable by electrostatic gating. The effect of changes in both the physical graphene and the device’s structural parameters on optimized absorption performance is systematically analyzed through the calculation of reflectivity curves of incident light. Our results indicate that the intersubband absorption of the device can be improved by adjusting the parameters of both the graphene material and the device structure. Furthermore, the cavity resonant mode excited by surface plasmon polaritons can be tuned to the response frequency of the quantum well under optimized parameters. Intersubband absorption is almost 1.5 times higher than that of a micro-cavity structure that uses metal grating.

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42

Martínez Castellano, Eduardo, Julen Tamayo-Arriola, Miguel Montes Bajo, Alicia Gonzalo, Lazar Stanojević, Jose María Ulloa, Oleksii Klymov, et al. "Self-assembled metal-oxide nanoparticles on GaAs: infrared absorption enabled by localized surface plasmons." Nanophotonics 10, no. 9 (June 18, 2021): 2509–18. http://dx.doi.org/10.1515/nanoph-2021-0167.

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Abstract Metal-oxides hold promise as superior plasmonic materials in the mid-infrared compared to metals, although their integration over established material technologies still remains challenging. We demonstrate localized surface plasmons in self-assembled, hemispherical CdZnO metal-oxide nanoparticles on GaAs, as a route to enhance the absorption in mid-infrared photodetectors. In this system, two localized surface plasmon modes are identified at 5.3 and 2.7 μm, which yield an enhancement of the light intensity in the underlying GaAs. In the case of the long-wavelength mode the enhancement is as large as 100 near the interface, and persists at depths down to 50 nm. We show numerically that both modes can be coupled to infrared intersubband transitions in GaAs-based multiple quantum wells, yielding an absorbed power gain as high as 5.5, and allowing light absorption at normal incidence. Experimentally, we demonstrate this coupling in a nanoparticle/multiple quantum well structure, where under p-polarization the intersubband absorption is enhanced by a factor of 2.5 and is still observed under s-polarization, forbidden by the usual absorption selection rules. Thus, the integration of CdZnO on GaAs can help improve the figures of merit of quantum well infrared photodetectors, concept that can be extended to other midinfrared detector technologies.

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43

Cywiński, G., C. Skierbiszewski, M. Siekacz, M. Kryśko, A. Feduniewicz-Żmuda, M. Gladysiewicz, R. Kudrawiec, et al. "Enhancement of Intersubband Absorption in GaInN/AlInN Quantum Wells." Acta Physica Polonica A 114, no. 5 (November 2008): 1093–99. http://dx.doi.org/10.12693/aphyspola.114.1093.

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44

Ahn, D., and S. L. Chuang. "Nonlinear intersubband optical absorption in a semiconductor quantum well." Journal of Applied Physics 62, no. 7 (October 1987): 3052–55. http://dx.doi.org/10.1063/1.339369.

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Lai, K. T., S. K. Haywood, R. Gupta, and M. Missous. "Enhanced intersubband absorption in stepped double barrier quantum wells." Electronics Letters 38, no. 11 (2002): 529. http://dx.doi.org/10.1049/el:20020261.

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Liu, J. L., W. G. Wu, A. Balandin, G. L. Jin, and K. L. Wang. "Intersubband absorption in boron-doped multiple Ge quantum dots." Applied Physics Letters 74, no. 2 (January 11, 1999): 185–87. http://dx.doi.org/10.1063/1.123287.

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Fenigstein, A., A. Fraenkel, E. Finkman, G. Bahir, and S. E. Schacham. "Current induced intersubband absorption in GaAs/GaAlAs quantum wells." Applied Physics Letters 66, no. 19 (May 8, 1995): 2513–15. http://dx.doi.org/10.1063/1.113151.

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Boucaud, P., J. ‐M Lourtioz, F. H. Julien, P. Warren, and M. Dutoit. "Intersubband absorption in Si/Si1−x−yGexCy quantum wells." Applied Physics Letters 69, no. 12 (September 16, 1996): 1734–36. http://dx.doi.org/10.1063/1.118013.

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Berger, V., N. Vodjdani, B. Vinter, E. Costard, and E. Böckenhoff. "Optically induced intersubband absorption in biased double quantum wells." Applied Physics Letters 60, no. 15 (April 13, 1992): 1869–71. http://dx.doi.org/10.1063/1.107138.

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50

Jun-jie, Shi, Dai Xian-qi, and Pan Shao-hua. "Intersubband Optical Absorption in Semiconductor Superlattices with Complex bases." Acta Physica Sinica (Overseas Edition) 3, no. 6 (June 1994): 413–25. http://dx.doi.org/10.1088/1004-423x/3/6/003.

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