Добірка наукової літератури з теми "Interlayer thickness"
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Статті в журналах з теми "Interlayer thickness"
HE, YUANPING, YU-XIAO CUI, and FANG-HONG SUN. "ENHANCEMENT OF ADHESION STRENGTH AND TRIBOLOGICAL PERFORMANCE OF CVD DIAMOND FILMS ON TUNGSTEN CARBIDE SUBSTRATES WITH HIGH COBALT CONTENT VIA AMORPHOUS SiC INTERLAYERS." Surface Review and Letters 26, no. 09 (October 17, 2019): 1950051. http://dx.doi.org/10.1142/s0218625x19500513.
Повний текст джерелаSu, Jie, Zhenghua Zhou, You Zhou, Xiaojun Li, Qing Dong, Yafei Wang, Yuping Li, and Liu Chen. "The Characteristics of Seismic Response on Hard Interlayer Sites." Advances in Civil Engineering 2020 (June 25, 2020): 1–11. http://dx.doi.org/10.1155/2020/1425969.
Повний текст джерелаXia, Xiong, Yi Bo Wang, Sai Ying Xi, Jun Sun, Han Dong Xu, and Yi Huang. "Study on Effects of Earthquake Response of Soft Interlayer." Advanced Materials Research 1049-1050 (October 2014): 205–8. http://dx.doi.org/10.4028/www.scientific.net/amr.1049-1050.205.
Повний текст джерелаBauer, Sondes, Adriana Rodrigues, Lukáš Horák, Xiaowei Jin, Reinhard Schneider, Tilo Baumbach, and Václav Holý. "Structure Quality of LuFeO3 Epitaxial Layers Grown by Pulsed-Laser Deposition on Sapphire/Pt." Materials 13, no. 1 (December 21, 2019): 61. http://dx.doi.org/10.3390/ma13010061.
Повний текст джерелаBouška, Petr, Miroslav Špaček, Drahomír Crhan, Tomáš Bittner, and Miroslav Vokáč. "Experimental Verification of the Effective Thickness of Laminated Glass." Key Engineering Materials 662 (September 2015): 245–48. http://dx.doi.org/10.4028/www.scientific.net/kem.662.245.
Повний текст джерелаLee, J. J., W. S. Yang, and Jung Ho Je. "Enhanced nucleation density of chemical vapor deposition diamonds by using interlayer." Journal of Materials Research 12, no. 3 (March 1997): 657–64. http://dx.doi.org/10.1557/jmr.1997.0100.
Повний текст джерелаLu, Sheng Bo, and Zheng Kui Xu. "Effect of Interlayer Thickness on Stress and Dielectric Properties of MgTiO3 Modified (Ba,Sr)TiO3 Multilayer Thin Films." Materials Science Forum 654-656 (June 2010): 1796–99. http://dx.doi.org/10.4028/www.scientific.net/msf.654-656.1796.
Повний текст джерелаGan, Kuan, Min Li, and Meng Meng Wu. "The Influences of Interdigitated Electrode Asymmetry on the Actuation Performance of Piezoelectric Materials." Applied Mechanics and Materials 664 (October 2014): 18–22. http://dx.doi.org/10.4028/www.scientific.net/amm.664.18.
Повний текст джерелаShmorgun, Victor Georgievich, Artem I. Bogdanov, and Alexander O. Taube. "Analysis of Thermal Stresses in Layered Composite AD1 + Cr20Ni80 + M1 after Heat Treatment." Materials Science Forum 946 (February 2019): 8–13. http://dx.doi.org/10.4028/www.scientific.net/msf.946.8.
Повний текст джерелаYang, Min, Zeng Da Zou, Si Li Song, and Xin Hong Wang. "Effect of Interlayer Thickness on Strength and Fracture of Si3N4 and Inconel600 Joint." Key Engineering Materials 297-300 (November 2005): 2435–40. http://dx.doi.org/10.4028/www.scientific.net/kem.297-300.2435.
Повний текст джерелаДисертації з теми "Interlayer thickness"
Shipkova, I. G., V. S. Chumak, M. V. Reshetnyak, A. Y. Devizenko, and Y. P. Pershyn. "Estimation of interlayer composition in WC/Si multilayer X-ray mirrors (MXMs) at nanometer scale." Thesis, НТУ "ХПІ", 2016. http://repository.kpi.kharkov.ua/handle/KhPI-Press/28180.
Повний текст джерелаSugar, Joshua D. "Mechanisms of microstructure development at metallic-interlayer/ceramic interfaces during liquid-film-assisted bonding." Berkeley, Calif. : Oak Ridge, Tenn. : Lawrence Berkeley National Laboratory ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2003. http://www.osti.gov/servlets/purl/825347-j6A0Su/native/.
Повний текст джерелаPublished through the Information Bridge: DOE Scientific and Technical Information. "LBNL--54185" Sugar, Joshua D. USDOE Director. Office of Science. Basic Energy Sciences (US) 12/01/2003. Report is also available in paper and microfiche from NTIS.
Wang, Yu-Ting, and 王俞婷. "Thickness Effect of Nickel Interlayer on the Properties after Aluminum and Alumina Interfacial Reactions." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/heshg2.
Повний текст джерела國立交通大學
材料科學與工程學系所
106
Direct bonded copper (DBC) substrates have been widely used in power electronics and insulated gate bipolar transistors (IGBT) modules. However, poor thermal cycling reliability of DBC substrates restrict its applications. Direct bonded aluminum (DBA) substrates have been developed to replace DBC substrates due to its superior reliability. Previous studies used the silicon, germanium, silver, and copper as the interlayer to prepare DBA substrates. In this study, the Ni was selected and various thickness of nickel (100 nm、300 nm、500 nm) has been deposited on the Al2O3 substrate as the interlayer to join Al substrate by electron-beam evaporation. The specimens were then annealed at Al-Ni eutectic temperature (640℃) in argon atmosphere, the eutectic liquid phase formed at Al/Al2O3 interface to obtain better wettability. The purpose of present study is to analyze the microstructure of Al/Al2O3 contact by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Furthermore, scanning acoustic tomography (SAT) is used to reveal the voids distribution of Al/Al2O3 bonding layer for the purpose of evaluating the quality of DBA substrate. After joining of Al to Al2O3 with various thickness of nickel interlayers, Al3Ni phase were observed in the aluminum layer. The interfacial strength of Al/Al2O3 interfaces was measured by the shear strength test. The thermal conductivity of the sandwich (Al2O3/Al/Al2O3) specimens were measured by laser flash method. The resistivity of the aluminum layer with Al3Ni which was measured by four point probe. The results indicated that the interfacial strength of Al/Al2O3 interfaces and thermal conductivity of DBA substrates increased with the thickness of nickel interlayer increasing. The best thermal conductivity and shear strength of DBA specimens with 500 nm nickel interlayer was about 37 Wm-1K-1 and 31.5 MPa, respectively. In addition, comparing with the initial aluminum foil, the resistivity of aluminum layer with Al3Ni which was formed after Al/Al2O3 joint decreased insufficiently.
Yang, Fan-Yi Ou, and 歐陽汎怡. "Effect of film thickness and Ti interlayer thickness on the structure and properties of nanocrystalline TiN thin film deposited by unbalanced magnetron (UBM) sputtering." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/36607902561557804174.
Повний текст джерела國立清華大學
工程與系統科學系
92
Nanocrystalline TiN thin films were successfully deposited on Si (100) and D2 steel substrates using unbalanced magnetron sputtering (UBMS) system. The objective of this study was to investigate the effect of film thickness and Ti interlayer thickness on the composition, structures, mechanical properties, and corrosion resistance of TiN film. The results showed that (111) was the dominant preferred orientation in the TiN films. The effects of the film thickness were only slightly varied on the N/Ti ratio, roughness, and grain size. The packing factor was almost constant with film thickness and the thinnest specimen reached a quite high packing factor of 0.8. Nanoindentation data, ranging from 22~29 GPa, indicated that hardness of the films was not related to the film texture and film thickness. The residual stresses of all TiN films were compressive, and mostly decreased with increasing film thickness in TiN/D2 specimens. Interfacial shear stress induced from the residual stress was increased with film thickness, whereas the residual stress was not necessarily increased with film thickness. In the bi-layer TiN/Ti coating, there was a critical Ti interlayer thickness (120~150nm) to effectively reduce the thermal stress and residual stress in the TiN coating. The results of potentiodynamic polarization scan in both 5% NaCl and 0.5M H2SO4 + 0.05M KSCN solutions indicated that packing factor was more effective than film thickness to the corrosion resistance for the coating. Furthermore, increasing film thickness or adding a Ti interlayer could effectively protect the substrate from the corrosive medium, if the packing factor was sufficiently high.
Chih, Po-Chun, and 植柏鈞. "Effect of Ti interlayer thickness on mechanical properties and wear resistance of TiZrN coatings on AISI D2 steel." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/9h9q96.
Повний текст джерелаYan, Pay-Yu, and 嚴佩瑜. "The effect of different thickness of Ge interlayers on the Ni / Ge / Si system." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/83851340011615135622.
Повний текст джерела國立清華大學
材料科學工程學系
92
In this thesis, we will investigate the influence of thickness of Ge interlayer on the reaction process of Ni/Ge/Si system. We use effusion cell to deposit 12, 20, and 30nm Ge interlayer, and then deposit 30nm Ni by electron beam evaporate. During the annealing process at different temperature(500, 600, and 700℃) with different time(1~18 hr), we measure the curvature of the samples in situ. After annealing, the samples were investigated by four-point probe, X-ray diffraction(XRD), Auger Electron Spectroscopy(AES), and transmission electron microscopy(TEM) with energy dispersion spectrometer(EDX). The result shows that if the Ge interlayer is below 20 nm, the samples formed Ge (NiSi1-zGez、NiSi1-yGey)/ NiSi1-zGez(Si1-xGex、Ge)/Si (y、x>z) structure after annealing at 500℃. As the annealing time increases, the ratio of Ge in the upper layer increases. When the annealing temperature raises to 700℃, the samples’ structures change into transverse NiSi1-zGez /Si1-xGex /NiSi1-zGez sandwich structure. We speculate that this is because the Si1-xGex grain grows upwardly. The percentage of Ge in the Si1-xGex grain increases, but does not change in the NiSi1-zGez grain as the annealing time increases at 700℃. The samples’ structures are Ge、NiSi1-yGey、NiSi1-zGez/ NiSi1-zGez、Si1-xGex、Ge/NiSi2/Si after annealing at 500℃ as the Ge interlayer is 30nm. The structures transfer into transverse NiSi1-zGez or NiSi2/Si1-xGex/ NiSi1-zGez or NiSi2 sandwich structures, and a thin Si1-xGex layer forms at surface after annealing at 700℃. We speculate that it is also because the Si1-xGex grain grows upwardly. The NiSi2 grain grows but the NiSi1-zGez grain decreases when the annealing time increases. NiSi2 appears early for the samples of 30nm Ge interlayer, and doesn’t be found even the annealing condition is 700℃ for 18hrs if the samples have Ge interlayer below 20nm. This is because when the thicker Ge interlayer anneals, the diffusion of Ni will be obstructed, and Ni will form NiSi2 in the Si surface. This is very different from normal nickel silicide forming sequence. We will bring up reasonable explanations to the experiment results by using the effective heat of formation.
Частини книг з теми "Interlayer thickness"
Yang, Min, Zeng Da Zou, Si Li Song, and Xin Hong Wang. "Effect of Interlayer Thickness on Strength and Fracture of Si3N4 and Inconel600 Joint." In Key Engineering Materials, 2435–40. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-978-4.2435.
Повний текст джерелаGérard, J. F., N. Amdouni, H. Sautereau, and J. P. Pascault. "Introduction of a Rubbery Interphase in Glass/Epoxy Composite Materials: Influence of the Interlayer Thickness on the Viscoelastic and Mechanical Properties of Particulate and Unidirectional Composites." In Controlled Interphases in Composite Materials, 441–48. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-011-7816-7_43.
Повний текст джерелаТези доповідей конференцій з теми "Interlayer thickness"
Shen, W., A. Das, M. Racine, R. Cheng, J. H. Judy, and J. Wang. "Reduction of Ru Interlayer Thickness for CoCrPt-SiO2 Perpendicular Recording Media." In INTERMAG 2006 - IEEE International Magnetics Conference. IEEE, 2006. http://dx.doi.org/10.1109/intmag.2006.376354.
Повний текст джерелаZhao, Fuxiao, Tianqing Yu, and Jianhua Cheng. "The optimum thickness confirmation of asphalt mixture stress-absorbing material interlayer." In 2010 International Conference on Mechanic Automation and Control Engineering (MACE). IEEE, 2010. http://dx.doi.org/10.1109/mace.2010.5536612.
Повний текст джерелаBalasubramanian, Manickam, and Ramalingam Kumar. "Prediction of Reliability in Friction Welded Dissimilar Joints by Weibull Distribution." In ASME 2015 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/imece2015-50621.
Повний текст джерелаMarcinichen, Jackson B., and John R. Thome. "3D Stacks of Microprocessors and Memories With Backside Two-Phase Multi-Microchannel Cooler." In ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/ipack2013-73263.
Повний текст джерелаAbou-Hanna, Jeries, John Carlson, and Jose´ Lozano. "Nano Investigation of Cracks in Tungsten-Doped Diamond-Like Carbon (DLC) Coatings." In ASME 2005 International Mechanical Engineering Congress and Exposition. ASMEDC, 2005. http://dx.doi.org/10.1115/imece2005-79135.
Повний текст джерелаMoharana, P. L., Shahid Anwar, Aminul Islam, S. Bajpai, and Sharmistha Anwar. "Study of nickel interlayer thickness effect on WN/Ni multilayer thin film." In DAE SOLID STATE PHYSICS SYMPOSIUM 2016. Author(s), 2017. http://dx.doi.org/10.1063/1.4980483.
Повний текст джерелаMohammed, Omar B., Leonard F. Register, and Sanjay K. Banerjee. "Tunnel Barrier Thickness, Interlayer Rotational Alignment, and Top Gating Effects on ReS2/hBN/ReS2 Resonant Interlayer Tunnel Field Effect Transistors." In 2019 Device Research Conference (DRC). IEEE, 2019. http://dx.doi.org/10.1109/drc46940.2019.9046452.
Повний текст джерелаArai, Masahiro, Koh-Ichi Sugimoto, and Morinobu Endo. "Mode II Interlaminar Fracture Toughness of CNF-CFRP Hybrid Composite." In ASME 2006 Multifunctional Nanocomposites International Conference. ASMEDC, 2006. http://dx.doi.org/10.1115/mn2006-17033.
Повний текст джерелаLe, Minh-Quy, Jin-Woo Yi, and Seock-Sam Kim. "Finite Element Analysis of Ceramic Coating Systems Under Spherical Indentation With Metallic Interlayer: Part I — Uncracked Coatings." In World Tribology Congress III. ASMEDC, 2005. http://dx.doi.org/10.1115/wtc2005-64209.
Повний текст джерелаZhang, M., Y. Nozaki, and K. Matsuyama. "Thickness dependence of interlayer fringe field coupling in sub micron NiFe/Cu multilayered pillars." In INTERMAG Asia 2005: Digest of the IEEE International Magnetics Conference. IEEE, 2005. http://dx.doi.org/10.1109/intmag.2005.1464305.
Повний текст джерела